CN110261960A - The buffer protection method at the optical waveguide coupled end of silicon substrate in a kind of pair of COMS technique - Google Patents
The buffer protection method at the optical waveguide coupled end of silicon substrate in a kind of pair of COMS technique Download PDFInfo
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- CN110261960A CN110261960A CN201910580887.9A CN201910580887A CN110261960A CN 110261960 A CN110261960 A CN 110261960A CN 201910580887 A CN201910580887 A CN 201910580887A CN 110261960 A CN110261960 A CN 110261960A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12038—Glass (SiO2 based materials)
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
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Abstract
The present invention proposes the buffer protection method that the optical waveguide coupled end of silicon substrate carries out in a kind of pair of COMS technique; it include: Step 1: determining by protection silicon wafer by protection face; it is described that the optical waveguide coupled end of silicon substrate is formed in protection face, and will be fixed on silicon substrate by protection silicon wafer by photoresist；Step 2: silicon wafer will be stopped to be fixed on the silicon substrate by photoresist, and make the blocking silicon wafer close to being arranged by protection face by protection silicon wafer, and is formed protection gap between protection face and blocking silicon wafer described；Step 3: photoresist solution is penetrated into from the side in the protection gap and/or top to the protection gap, described by formation buffering clad in protection face；Step 4: the buffering clad formed to step 3 is heating and curing, described by formation buffer protection layer in protection face after solidification.The present invention effectively prevents the risk of the contaminated optical waveguide coupled end that may occur in COMS processing, package or injury, and processing compatibility is strong.
Description
Technical field
The present invention relates to semiconducter process technical fields, and in particular to silicon substrate is optical waveguide coupled in a kind of COMS technique
The buffer protection method at end.
Background technique
Business COMS technique generally can only process silicon wave according to existing process flow on fixed-size silicon wafer at present
It leads and is finally split, the optical waveguide coupled end of silicon substrate after processing is completed and unprotect.In technique research and development and device innovative design
In, when such as making the New Two Dimensional material photoelectric device based on silicon waveguide by micro-nano technology again, if protection is improper, silicon substrate
Optical waveguide coupled end is easy to be contaminated, wrap up or injure, and is lost so as to cause light passing and increases or directly result in not light passing.It is existing
There is the method for effective protecting not yet occurred in technology for the optical waveguide coupled end of silicon substrate in COMS technique.
Summary of the invention
The present invention proposes the optical waveguide coupled end of silicon substrate in a kind of pair of COMS technique for deficiency existing for existing COMS technology
The buffer protection method of progress, the method stops silicon wafer, innovation to form protection gap by innovation setting, and is dripped by capillary
Seep formed to by protection silicon wafer arbitrarily by the buffer protection layer of protection face covered comprehensively so that adding by the micro-nano of protection silicon wafer
Processing, Jin Erfang can be effectively protected by the silicon substrate optical waveguide coupled end structure offer formed in protection face to it during work
Only optical waveguide coupled end is contaminated caused by other subsequent techniques in COMS processing, wraps up or injure problem, non-for that must carry out
The micro-nano device of standard process processing, which provides, to be effectively protected, so that can be inserted in traditional integrated micro-nano technology
Processing flow to two-dimensional material and micro-nano device is not destroyed, there is extraordinary practical reference value, while the present invention proposes
To the optical waveguide coupled end of silicon substrate in COMS technique carry out buffer protection method can for traditional COMS technique
It is fully compatible with existing technique and techniqueflow, the change in existing technique and techniqueflow, popularization and application foreground will not be caused
It is wide.
It is as follows that the present invention solves the technical solution that above-mentioned technical problem is taken:
The buffer protection method that the optical waveguide coupled end of silicon substrate carries out in a kind of pair of COMS technique, includes the following steps:
Step 1: determine by protection silicon wafer by protection face, it is described the optical waveguide coupled end of silicon substrate is formed in protection face,
And it will be fixed on silicon substrate by protection silicon wafer by photoresist；
Step 2: silicon wafer will be stopped to be fixed on the silicon substrate by photoresist, and keep the blocking silicon wafer close
Being arranged by protection face by protection silicon wafer, and protection gap is formed between protection face and blocking silicon wafer described；
Step 3: photoresist solution is penetrated into from the side in the protection gap and/or top to the protection gap,
Described by formation buffering clad in protection face；
Step 4: the buffering clad formed to step 3 is heating and curing, described by shape in protection face after solidification
At buffer protection layer.
Further buffer protection method according to the present invention, wherein further include:
Step 5: determining whether the height of the buffer protection layer reaches described and protected by the detection of optics equal thickness interference
The height in face, if re-executing the step 3 and step 4, otherwise if so then execute step six；
Step 6: carrying out subsequent processing to by protection silicon wafer, light will be immersed by protection silicon wafer after the completion of working process
In photoresist solvent soln, dissolution removal is formed in by protection silicon wafer by the buffer protection layer in protection face.
Further buffer protection method according to the present invention by protection face includes being protected silicon wafer wherein described
Side elevation, side elevation and positive corner connecting portion and side elevation and positive edge joins position, the buffer protection
The height of layer meets or exceeds the height of the side elevation or the buffer protection layer is covered comprehensively and described wrapped by protection face
Each position included.
Further buffer protection method according to the present invention, wherein in the step 1, it is described by protection silicon wafer
It is fixed on the silicon substrate by PMMA A9 photoresist, the PMMA A9 photoresist solidifies 2-5 points at 150-180 DEG C
Clock.
Further buffer protection method according to the present invention, wherein in the step 2, the blocking silicon wafer
Side by protection face towards being arranged by protection silicon wafer, and in the side of silicon wafer and described by between protection face of stopping
The protection gap is formed, the width in the protection gap is 0.5-2mm.
Further buffer protection method according to the present invention, wherein the height for stopping silicon wafer is more than or equal to institute
It states by the height of protection silicon wafer, the width in the protection gap is 1mm, and the blocking silicon wafer is fixed by PMMA A9 photoresist
In on the silicon substrate, the PMMA A9 photoresist solidifies 2-5 minutes at 150-180 DEG C.
Further buffer protection method according to the present invention, wherein being pipetted in the step 3 using liquid-transfering gun
Photoresist solution simultaneously drips in the drop coating buffering layer region of silicon substrate, and the drop coating buffering layer region is close to the protection gap
Side locations, instill drop coating buffering layer region photoresist solution by capillary phenomenon from protection gap side penetrate into protection
In gap；Photoresist solution is pipetted from blocking silicon wafer and/or by the upper surface instillation protection of protection silicon wafer using liquid-transfering gun simultaneously
The top in gap, and penetrated into from the top in protection gap to protection gap by capillary phenomenon, thus the photoresist solution
Buffering clad is formed along by the height of protection face in the protection gap.
Further buffer protection method according to the present invention, wherein the photoresist solution in the step 3 is
PMMA A4 photoresist solution；Wherein in the step 4, to PMMA A9 photoresist solution formed buffering clad in 150-
Solidify 2-5 minutes at 180 DEG C.
Further buffer protection method according to the present invention, wherein the step 5 specifically includes: aobvious in optics
Whether micro- microscopic observation is had equal thick interference fringe at protection face by protection silicon wafer, if having equal thick interference fringe appearance
Determine that the height of the buffer protection layer is not up to the height by protection face, re-executes the step 3 and step at this time
Four, determine that the height of the buffer protection layer has reached the height by protection face if occurring without equal thick interference fringe,
The step 6 is executed at this time.
Further buffer protection method according to the present invention, wherein the step 6 specifically includes: to being protected
Silicon wafer carries out subsequent processing, forms following process layer on by protection silicon wafer, then will be placed in photoresist by protection silicon wafer
In solvent soln impregnate the predetermined time after, be rinsed to by protection silicon wafer, will be ultimately formed in by protection silicon wafer by protection face
On the related buffer protection layer of buffer protection layer above other substances removal.
Technical solution of the present invention at least has following technological merit:
1), the present invention proposes a kind of completely new buffer protection side carried out for the optical waveguide coupled end of silicon substrate in COMS technique
Method, for traditional COMS technique, the present invention is fully compatible with existing technique and techniqueflow, will not cause existing technique
With the change on techniqueflow, there is preferable popularization and application foreground.
2), the buffer protection method proposed by the present invention carried out for the optical waveguide coupled end of silicon substrate in COMS technique, passes through
Innovation setting stop silicon wafer, innovation formed protection gap, and by capillary drop seep formation to by protection silicon wafer arbitrarily by protection face
The buffer protection layer covered comprehensively, provide effective guarantor for the micro-nano device of non-standard flow process processing must be carried out
Shield has so that the processing flow to two-dimensional material can be inserted in traditional integrated micro-nano technology and do not destroy micro-nano device
There is extraordinary practical reference value.
Detailed description of the invention
Fig. 1 is involved when implementing the progress buffer protection method of the present invention to the optical waveguide coupled end of silicon substrate in COMS technique
And each device be arranged positional structure top view；
Fig. 2 is buffering when implementing the progress buffer protection method of the present invention to the optical waveguide coupled end of silicon substrate in COMS technique
Cross-sectional view when clad is not up to by protection silicon wafer height；
Fig. 3 is buffering when implementing the progress buffer protection method of the present invention to the optical waveguide coupled end of silicon substrate in COMS technique
Cross-sectional view when clad reaches by protection silicon wafer height；
Fig. 4 is after implementing the buffer protection method of the present invention to the progress of the optical waveguide coupled end of silicon substrate in COMS technique in quilt
Protect the cross-sectional view of silicon wafer formed after buffer protection layer in protection face；
Fig. 5 be be formed with buffer protection layer following process is carried out on protection silicon wafer after form cuing open for following process layer
View；
Fig. 6 is that the recovery cross-sectional view by protection silicon wafer after dissolution cleaning is carried out to buffer protection layer.
The meaning of each appended drawing reference is as follows in figure:
For 1- by protection silicon wafer, 2- stops silicon wafer, and 3- drop coating buffers layer region, 4- silicon substrate, 5- following process layer.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawing, to the present invention do into
The detailed description of one step, matters embodiment of the invention and its explanation for explaining only the invention, are not intended as the present invention
Restriction.
The invention proposes the buffer protection method that the optical waveguide coupled end of silicon substrate in a kind of pair of COMS technique carries out, the present invention
The method utilize buffering technique, to be formed with Si Based Optical Waveguide Structures by protection silicon wafer side elevation and silicon wafer front surface edge
Submillimeter magnitude domain is protected, and the associated components being related to include being protected silicon wafer, stopping silicon wafer, silicon substrate, liquid relief
Rifle, drop coating buffering layer region and photoresist, main technological route are that silicon substrate is greater than by protection silicon wafer, and silicon wafer will be stopped to set
In by the optical waveguide coupled end of formation silicon substrate of protection silicon wafer by the preset distance of protection face side, can also be as needed in quilt
The surrounding of protection silicon wafer is respectively provided with blocking silicon wafer, to stop silicon wafer and be formed protection gap between protection silicon wafer.By not
Photoresist with concentration will be fixed on silicon substrate by protection silicon wafer and blocking silicon wafer.It will be used to form by capillary phenomenon slow
The photoresist solution of protective layer is deposited to penetrate into protection gap from side and top respectively, thus by the side elevation of protection silicon wafer and
Itself and front corner and edge form effective buffering clad, which can be effectively by silicon wafer side elevation
And the coating of side elevation and positive corner and positive part edge progress entirety, the buffering clad becomes after heat cure
Protection structure is formed at buffer protection layer, and around silicon wafer side elevation and its with front corner and edge.By protection silicon wafer
It, just will not be to by the side elevation of protection silicon wafer and side elevation and front corner and just when carrying out the processing of subsequent micro Process
Face part edge causes any pollution and damage, and then to being formed in silicon wafer side elevation and side elevation and front corner and front
Silicon substrate optical waveguide and coupling end structure on part edge are effectively protected.After the completion of micro Process processing, it will be protected
Silicon wafer, which is integrally placed in corresponding solvent soln, to be impregnated, and after impregnating, buffer protection layer is completely dissolved, related buffer protection
Other substances of layer top also can be removed, and restore the side elevation of silicon wafer and top surface edge to original state after removal.
It specifically gives and the optical waveguide coupled end of silicon substrate in COMS technique is delayed with reference to the accompanying drawing shown in the present invention
Guard method is rushed, is comprised the following processes:
Silicon substrate 4 will be fixed on using the first photoresist (preferably using PMMA A9 photoresist) by protection silicon wafer 1 first
On, its entirety is heated so that the first photoetching adhesive curing, preferably dries at 160 DEG C for PMMA A9 photoresist
It is 2 minutes roasting.
After being fixed by protection silicon wafer 1, will then silicon wafer 2 be stopped still (preferably to use using first photoresist
PMMA A9 photoresist) distance is fixed on by the preset distance by protection face of protection silicon wafer 1, which is preferably
0.5-2mm, more preferably 1mm, thus being protected gap between protection silicon wafer 1 and blocking silicon wafer 2.It is wherein described to be protected
Face is the surface for protect processing for being had the optical waveguide coupled end structure of silicon substrate by is formationed of protection silicon wafer, including is protected
The side elevation and side elevation of silicon wafer and positive corner connecting portion, side elevation and positive edge joins position, the quilt
Protection face can be around by a side elevation of protection silicon wafer or multiple side elevations.Then being heated to whole so that
First photoetching adhesive curing is preferably toasted 2 minutes at 160 DEG C for PMMA A9 photoresist.
Then the second photoresist (preferably PMMA A4 photoresist) is pipetted using liquid-transfering gun and drip in silicon substrate 4
Drop coating buffers in layer region, and it is as shown in Fig. 1 which buffers layer region, close to stopping 2 He of silicon wafer on silicon substrate 4
By the side locations in the protection gap between protection silicon wafer 1, the indicated region of appended drawing reference 3, instills drop coating buffer layer as shown in figure 1
Second photoresist (PMMA A4) solution in region 3 is slowly penetrated into protection gap by capillary phenomenon from the side in protection gap,
Simultaneously in blocking silicon wafer 2 and/or by the second photoresist of upper surface drop coating (PMMA A4) solution of protection silicon wafer, so that the second light
Photoresist solution is penetrated into simultaneously from the top in protection gap into protection gap by capillary phenomenon, and finally makes the second photoresist
Solution can achieve the height same by 1 upper surface of protection silicon wafer in protection gap, as shown in figure 3, to by protection silicon
The side elevation and side elevation of piece and positive corner connecting portion, side elevation and positive edge joins position are respectively formed effectively
Clad is buffered, which can be effectively by silicon wafer side elevation and side elevation and positive corner and positive part
Edge carries out whole coating package.Then heated to whole so that the second photoetching adhesive curing, for PMMA A4 light
Photoresist is toasted 2 minutes at 160 DEG C, and the buffering clad becomes to surround by protection silicon wafer by the slow of protection face after heat cure
Rush protective layer.
Preferably can the covered effect to buffer protection layer carry out detection confirmation, preferably can based on optics equal thickness interference examine
Survey technology is confirmed, buffer protection layer is specifically observed under an optical microscope, if buffer protection layer height has reached quilt
It protects silicon wafer by the height of protection face, is then generated because of equal thickness interference there will not be at protection face by protection silicon wafer
Interference fringe, interference fringe can only occur by the inside of protection silicon wafer, when observing that this phenomenon then illustrates to reach at this time
To by comprehensive protection of protection face.If still observe under an optical microscope by protection silicon wafer by protection face there are
Equal thick interference fringe then illustrates that the height of buffer protection layer is not up to by the height required by protection face of protection silicon wafer (such as
Shown in Fig. 2), that is, at this time not up to by protection silicon wafer, by comprehensive protection of protection face, above-mentioned dropping liquid need to be repeated and penetrated into
Journey reaches until protection buffer layer by protection silicon wafer height (as shown in Figure 3), that is, is protected until observing by protection silicon wafer
Equal thick interference fringe at mask disappears.
Then subsequent processing is carried out to by protection silicon wafer, such as carry out micro fabrication such as atomic layer deposition also or splashed
Metal material etc. is penetrated, after completing corresponding processing, as shown in Figure 4 and Figure 5, forms following process layer 5 on by protection silicon wafer.
Due to the protective effect of aforementioned buffer protection layer, so that when to micro Process processing is carried out by protection silicon wafer, it just will not be to quilt
The side elevation and side elevation for protecting silicon wafer cause any pollution with front corner, side elevation and front edge position and damage,
And then to the silicon substrate optical waveguide being formed on silicon wafer side elevation and side elevation and front corner, side elevation and front edge position
Coupling end structure is effectively protected.
Finally after the completion of to being handled by the micro Process of protection silicon wafer, dissolvable photoresist will be integrally placed at by protection silicon wafer
Solution such as acetone soln in impregnate 2 hours, and device overall surface is rinsed using the wash bottle for filling acetone, finally will
Buffer protection layer is completely dissolved and rinses out, other substances above related buffer protection layer are also removed, and silicon will be made after removal
Piece is restored by protection face to original state, as shown in fig. 6, realize during following process to by protection silicon wafer by protection face
Protection and recovery.It is formed in no package, pollution or injury by protection silicon to ensure by means of the present invention
Piece by the optical waveguide coupled end structure of silicon substrate in protection face in the case where, realize silicon wafer subsequent machining technology.
The aforementioned buffer protection method carried out to the optical waveguide coupled end of silicon substrate in COMS technique proposed by the present invention passes through wound
New setting stops silicon wafer, innovation to form protection gap, and by capillary drop seep formation to by protection silicon wafer arbitrarily by protection face
The buffer protection layer covered comprehensively so that by protection silicon wafer micro-nano technology during it can be formed in protection face
Processing is effectively protected in the optical waveguide coupled end structure offer of silicon substrate, and then prevents light caused by other subsequent techniques in COMS processing
Waveguide coupled end is contaminated, wraps up or injure problem, provides for that must carry out the micro-nano device of non-standard flow process processing
It is effectively protected, so that the processing flow to two-dimensional material can be inserted in traditional integrated micro-nano technology and do not destroy micro-nano
Device, have extraordinary practical reference value, while it is proposed by the present invention to the optical waveguide coupled end of silicon substrate in COMS technique into
Capable buffer protection method can be fully compatible with existing technique and techniqueflow for traditional COMS technique, will not
Cause the change in existing technique and techniqueflow, popularization and application foreground is wide.
The above is only the preferred embodiment of the present invention is described, technical solution of the present invention is not limited to
This, those skilled in the art's made any known deformation on the basis of major technique design of the invention belongs to the present invention
Claimed technology scope, the specific protection scope of the present invention are subject to the record of claims.
Claims (10)
1. the buffer protection method that the optical waveguide coupled end of silicon substrate carries out in a kind of pair of COMS technique, which is characterized in that including as follows
Step:
Step 1: determine by protection silicon wafer by protection face, it is described that silicon substrate optical waveguide coupled end is formed in protection face, and will
It is fixed on silicon substrate by protection silicon wafer by photoresist；
Step 2: silicon wafer will be stopped to be fixed on the silicon substrate by photoresist, and make the blocking silicon wafer close to described
Protection gap is formed between protection face and blocking silicon wafer by being arranged by protection face for protection silicon wafer, and described；
Step 3: photoresist solution is penetrated into from the side in the protection gap and/or top to the protection gap, in institute
It states and is formed buffering clad in protection face；
Step 4: the buffering clad formed to step 3 is heating and curing, it is slow by formation in protection face described after solidification
Rush protective layer.
2. buffer protection method according to claim 1, which is characterized in that wherein further include:
Step 5: determining whether the height of the buffer protection layer reaches described by protection face by the detection of optics equal thickness interference
Highly, if re-executing the step 3 and step 4, otherwise if so then execute step six；
Step 6: carrying out subsequent processing to by protection silicon wafer, photoresist will be immersed by protection silicon wafer after the completion of working process
In solvent soln, dissolution removal is formed in by protection silicon wafer by the buffer protection layer in protection face.
3. buffer protection method according to claim 1 or 2, which is characterized in that wherein described by protection face includes being protected
The side elevation, side elevation and positive corner connecting portion and side elevation and positive edge joins position of silicon wafer are protected, it is described
The height of buffer protection layer meets or exceeds the height of the side elevation or the buffer protection layer covers described protected comprehensively
Each position included by mask.
4. buffer protection method according to claim 1-3, which is characterized in that wherein in the step 1, institute
It states and is fixed on the silicon substrate by protection silicon wafer by PMMA A9 photoresist, the PMMA A9 photoresist is in 150-180
Solidify 2-5 minutes at DEG C.
5. buffer protection method according to claim 1-4, which is characterized in that wherein in the step 2, institute
It states and stops the side of silicon wafer towards being arranged by protection face by protection silicon wafer, and in the side of silicon wafer and described of stopping
The protection gap is formed between protection face, the width in the protection gap is 0.5-2mm.
6. buffer protection method according to claim 5, which is characterized in that the height for stopping silicon wafer is more than or equal to institute
It states by the height of protection silicon wafer, the width in the protection gap is 1mm, and the blocking silicon wafer is fixed by PMMA A9 photoresist
In on the silicon substrate, the PMMA A9 photoresist solidifies 2-5 minutes at 150-180 DEG C.
7. buffer protection method according to claim 1-6, which is characterized in that wherein in the step 3, make
Photoresist solution is pipetted with liquid-transfering gun and is dripped in the drop coating buffering layer region of silicon substrate, and the drop coating buffering layer region is close
The side locations in the protection gap, the photoresist solution for instilling drop coating buffering layer region pass through capillary phenomenon from protection gap
Side is penetrated into protection gap；Photoresist solution is pipetted from blocking silicon wafer and/or by the upper of protection silicon wafer using liquid-transfering gun simultaneously
Surface instills the top in protection gap, and is penetrated into from the top in protection gap to protection gap by capillary phenomenon, thus institute
It states photoresist solution and forms buffering clad along by the height of protection face in the protection gap.
8. buffer protection method according to claim 1-7, which is characterized in that the wherein light in the step 3
Photoresist solution is PMMA A4 photoresist solution；Wherein in the step 4, to the buffers packet of PMMA A9 photoresist solution formation
Coating solidifies 2-5 minutes at 150-180 DEG C.
9. according to the described in any item buffer protection methods of claim 2-8, which is characterized in that wherein the step 5 is specifically wrapped
It includes: observing under an optical microscope and whether equal thick interference fringe is had at protection face by protection silicon wafer, if there is uniform thickness dry
It relates to striped appearance and then determines that the height of the buffer protection layer is not up to the height by protection face, re-execute at this time described
Step 3 and step 4 determine that the height of the buffer protection layer has reached described protected if occurring without equal thick interference fringe
The height of mask executes the step 6 at this time.
10. according to the described in any item buffer protection methods of claim 2-9, which is characterized in that wherein the step 6 is specific
Include: to carry out subsequent processing to by protection silicon wafer, forms following process layer on by protection silicon wafer, it then will be by protection silicon
Piece is placed in photoresist solvent soln impregnate the predetermined time after, be rinsed, will be ultimately formed in being protected to by protection silicon wafer
Silicon wafer is removed by other substances above the related buffer protection layer of buffer protection layer in protection face.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007133408A (en) * | 2005-11-10 | 2007-05-31 | Honeywell Internatl Inc | Silicon-based optical waveguide structure and method of manufacturing the same |
| CN101477225A (en) * | 2009-01-19 | 2009-07-08 | 北京航空航天大学 | Optical waveguide and its production method and micro-optical gyroscope |
| TW201123353A (en) * | 2009-12-29 | 2011-07-01 | United Microelectronics Corp | Structure of a semiconductor device having a waveguide and method of forming the same |
| CN103033877A (en) * | 2012-12-26 | 2013-04-10 | 东南大学 | Waveguide coupler with echelon grating mirror and preparation method thereof |
| CN107104119A (en) * | 2017-04-01 | 2017-08-29 | 南京邮电大学 | Hanging LED straight wave guides coupling integration photonic device of silicon substrate and preparation method thereof |
-
2019
- 2019-06-29 CN CN201910580887.9A patent/CN110261960B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007133408A (en) * | 2005-11-10 | 2007-05-31 | Honeywell Internatl Inc | Silicon-based optical waveguide structure and method of manufacturing the same |
| CN101477225A (en) * | 2009-01-19 | 2009-07-08 | 北京航空航天大学 | Optical waveguide and its production method and micro-optical gyroscope |
| CN101477225B (en) * | 2009-01-19 | 2010-12-08 | 北京航空航天大学 | Optical waveguide and its production method and micro-optical gyroscope |
| TW201123353A (en) * | 2009-12-29 | 2011-07-01 | United Microelectronics Corp | Structure of a semiconductor device having a waveguide and method of forming the same |
| CN103033877A (en) * | 2012-12-26 | 2013-04-10 | 东南大学 | Waveguide coupler with echelon grating mirror and preparation method thereof |
| CN107104119A (en) * | 2017-04-01 | 2017-08-29 | 南京邮电大学 | Hanging LED straight wave guides coupling integration photonic device of silicon substrate and preparation method thereof |
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| CN110261960B (en) | 2020-04-21 |
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