JPS6042875A - Photo receiving element - Google Patents
Photo receiving elementInfo
- Publication number
- JPS6042875A JPS6042875A JP58151265A JP15126583A JPS6042875A JP S6042875 A JPS6042875 A JP S6042875A JP 58151265 A JP58151265 A JP 58151265A JP 15126583 A JP15126583 A JP 15126583A JP S6042875 A JPS6042875 A JP S6042875A
- Authority
- JP
- Japan
- Prior art keywords
- film
- light
- photo
- receiving surface
- reflection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 230000001681 protective effect Effects 0.000 claims description 11
- 239000003795 chemical substances by application Substances 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 239000006224 matting agent Substances 0.000 claims description 3
- 229920002050 silicone resin Polymers 0.000 claims description 3
- 230000031700 light absorption Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 13
- 230000002411 adverse Effects 0.000 abstract description 3
- 238000004381 surface treatment Methods 0.000 abstract description 3
- 238000002834 transmittance Methods 0.000 abstract description 2
- 230000010748 Photoabsorption Effects 0.000 abstract 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 5
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000001960 triggered effect Effects 0.000 description 4
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4212—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element being a coupling medium interposed therebetween, e.g. epoxy resin, refractive index matching material, index grease, matching liquid or gel
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、反射防止膜を持つ受光素子に係り、特にそ
の反射防止膜の保躾に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a light receiving element having an antireflection film, and particularly to maintenance of the antireflection film.
以下、光トリガサイリスクを例にとって説明する。第１
図は一般的な元トリガサイリスタエレメントおよびその
他組立部品の模式図であり、１は陽極電極、２は半導体
基体、３は陰極電極、４は受光面、５は反射防止膜、６
はマツチング剤、１はライトガイドであり、１〜５で光
トリガサイリスクエレメントを構成する。The following will explain the optical trigger risk as an example. 1st
The figure is a schematic diagram of a general original trigger thyristor element and other assembled parts, where 1 is an anode electrode, 2 is a semiconductor substrate, 3 is a cathode electrode, 4 is a light-receiving surface, 5 is an antireflection film, and 6
1 is a matching agent, 1 is a light guide, and 1 to 5 constitute a light trigger risk element.
この光トリガサイリスクエレメントは、一般的に知られ
た製法で製造されるが、光をより多（半導体基体２の中
に導入するために、一般には第１図のように受光面４上
に反射防止膜５を設けるのが普通である。This optical trigger silica element is manufactured by a generally known manufacturing method, but in order to introduce more light (into the semiconductor substrate 2), it is generally made on the light receiving surface 4 as shown in FIG. It is common to provide an antireflection film 5.
この反射防止膜５の形成は、光トリガサイリスタエレメ
ントの製造工程の途中で行われ、その厚さは、入射光の
波長に応じて厳密に制御される。The antireflection film 5 is formed during the manufacturing process of the optically triggered thyristor element, and its thickness is strictly controlled depending on the wavelength of the incident light.
ところが従来は、反射防止膜５の形成後の工程により反
射防止膜５が化学的または機械的に損傷を受け、反射防
止膜５としての特性に悪影譬を与えていた。However, in the past, the anti-reflective film 5 was chemically or mechanically damaged during the steps after forming the anti-reflective film 5, which adversely affected the properties of the anti-reflective film 5.
この発明は、以上の点にかんがみてなされたもので、反
射防止膜形成後に、反射防止膜保護のための透明の保Ｍ
＆膜を形成したことＫある・〔発明の実施例〕
従来技術では、光トリガサイリスタエレメントに、例え
ば五酸化タンタルのよ５な反射防止膜を形成した後、一
般によく知られた工程であるが、周縁部のベベル工程２
表面処理工程を経て元トリガサイリスタエレメント完成
となるが、周縁部のベベル工程においては、その工程で
使用する研摩剤により、また、表面処理工程においては
、その工程で使用するエツチング液により所定の厚さに
形成された五酸化タンタルの膜厚が減少してしまい、期
待される幼果が得られなかった。This invention has been made in view of the above points, and after the formation of the anti-reflection film, a transparent protective layer is provided to protect the anti-reflection film.
[Embodiment of the Invention] In the prior art, after forming an anti-reflection coating such as tantalum pentoxide on a photo-triggered thyristor element, a generally well-known process is performed. , peripheral bevel process 2
After the surface treatment process, the original trigger thyristor element is completed, but in the process of beveling the peripheral edge, a predetermined thickness is created by the abrasive agent used in that process, and by the etching liquid used in the process. The thickness of the tantalum pentoxide film formed on the seedlings decreased, and the expected young fruits could not be obtained.
この発明の実施例では、第２図に示すように光トリガサ
イリスクエレメントに屈折率的２．１の五酸化タンタル
の反射防止ｈＡ５を、その受光面４の上に隣接して形成
し、その厚みを入射光の波長８７００Ａ〜１０３０Ａ前
後とし、しかる後に、その反射防止膜５の上に隣接して
二酸化シリコンの保岐膜８を完成した。これにより、前
記周縁部のベベル工程１表面処理工程においても損傷を
受けるのは二酸化シリコンの保編膜８であり、五酸化タ
ンタルの反射防止膜５は損傷を受けない。In the embodiment of the present invention, as shown in FIG. 2, an anti-reflection layer hA5 made of tantalum pentoxide with a refractive index of 2.1 is formed adjacent to the light-receiving surface 4 of the optical trigger thyristor element. The thickness was made to correspond to the wavelength of the incident light from 8700A to 1030A, and then a hoki film 8 of silicon dioxide was completed adjacent to the antireflection film 5. As a result, even in the beveling step 1 of the peripheral edge surface treatment step, it is the silicon dioxide film 8 that is damaged, but the tantalum pentoxide antireflection film 5 is not damaged.
以上のようにして完成された光トリガサイリスタエレメ
ントは、二酸化シリコンの保ｍｍａを付けたまま、ライ
トガイ、ド１とマツチング剤６とともに組み立てられる
。ここで、マツチング剤６は、光トリガサイリスタエレ
メントとライトガイド１との屈折率のマツチングをとり
、反射損失、拡がり損失を軽減するものであるが、この
実施例では、屈折率１．４ないし１．５のシリコン樹脂
を用いている。このため、保護Ｔａ８に屈折率１．４な
いし１．５の二酸化シリコンを用いると、屈折率かはｙ
等しいために、保峻膜８とマツチング剤６の境界面での
反射損失がほとんどなく、また、後工程で二酸化シリコ
ンの保護膜８が損傷を受けても、それが光の透過率に悪
影曽を与えない。そのために、保護膜８を付けたま−ま
組立てが可能であり、保護膜除去といった工程を省略で
きるはか、組立て時の反射防止膜５の損傷をも防ぐこと
ができる。The light-triggered thyristor element completed as described above is assembled together with the light guide, the dowel 1, and the matching agent 6, with the silicon dioxide adhesive still attached. Here, the matching agent 6 matches the refractive index of the optical trigger thyristor element and the light guide 1 to reduce reflection loss and spreading loss, but in this embodiment, the refractive index is 1.4 to 1. .5 silicone resin is used. Therefore, if silicon dioxide with a refractive index of 1.4 to 1.5 is used for the protective Ta8, the refractive index will be y
Because they are equal, there is almost no reflection loss at the interface between the protective film 8 and the matting agent 6, and even if the silicon dioxide protective film 8 is damaged in the subsequent process, it will not adversely affect the light transmittance. Don't give Zeng. Therefore, it is possible to assemble the film with the protective film 8 attached, and not only can the step of removing the protective film be omitted, but also damage to the antireflection film 5 during assembly can be prevented.
なお、上記実施例では、−例として光トリガサイリスタ
エレメントを用いたが、受光素子であれはこの発明が適
用できることはいうまでもない。In the above embodiment, a light-triggered thyristor element was used as an example, but it goes without saying that the present invention can be applied to any light-receiving element.
また、この実施例では、反射防止膜５．−ｑツチング剤
６にそれぞれ五酸化タンタル、シリコン樹脂を用いてい
るが、反射防止膜５．マツチング剤６としての機能を果
していれば、その他のものでもよい。また、保護膜８と
して二酸化シリコンを用いているが、反射防止膜５の保
護が可能′で、光の吸収の少ない物質であれはよく、ｍ
ｌＩ記マツチング剤６と屈折率のはｙ等しいものであれ
ば、さらに好結果が得られる。Further, in this embodiment, the antireflection film 5. -Q Although tantalum pentoxide and silicone resin are used as the sticking agent 6, respectively, the antireflection film 5. Other materials may be used as long as they function as the matching agent 6. Although silicon dioxide is used as the protective film 8, any material that can protect the anti-reflection film 5 and that absorbs less light may be used.
Even better results can be obtained if the refractive index of the matching agent 6 is equal to y.
以上説明したように、この発明の反射防止膜の上に光の
吸収の少ない保護膜を形成したので、組立工程中の反射
防止膜が損傷することがなく、したがって、特性の優れ
た受光素子が得られる利点がある。As explained above, since a protective film with low light absorption is formed on the anti-reflection film of the present invention, the anti-reflection film is not damaged during the assembly process, and therefore a light-receiving element with excellent characteristics can be obtained. There are benefits to be gained.
第１図は従来の受光素子を示すＷｒ面略図、第２図はこ
の発明の一実施例を示す断面略図である。
図中、１は陽極電極、２は牛導体基体、３は陰４ａｉ電
極、４は受光面、５は“反射防止膜％６はマツチング剤
、１はライトガイド、８は保護膜である。
なお、図中の同一符号は同一または相当部分を示す・
代理人 大岩増雄 （外２名）
第１図
第２図
手続補正書（自発）
特許庁長官殿
１、事件の表示 特願昭５８７１５１２６５号２、発明
の名称 受光素子
３、補正をする者
代表者片山仁へ部
５、補正の対象
明細書の発明の詳細な説明の欄
６、補正の内容
明細書第４頁２〜３行の「波長８７００λ〜１０３０λ
前後とし」を、［波長８７００λより、１０３０Ａ前後
としＪと補正する。
以上FIG. 1 is a schematic diagram in the Wr plane showing a conventional light receiving element, and FIG. 2 is a schematic cross-sectional diagram showing an embodiment of the present invention. In the figure, 1 is an anode electrode, 2 is a conductor substrate, 3 is a negative 4ai electrode, 4 is a light-receiving surface, 5 is an anti-reflection film, 6 is a matching agent, 1 is a light guide, and 8 is a protective film. , The same reference numerals in the diagrams indicate the same or equivalent parts. Agent: Masuo Oiwa (2 others) Figure 1 Figure 2 Procedural amendment (voluntary) Mr. Commissioner of the Japan Patent Office 1, Indication of case Japanese Patent Application No. 587151265 2 , Title of the invention: Photo-receiving element 3, Representative Hitoshi Katayama of the person making the amendment: Section 5, Detailed explanation of the invention column 6 of the specification subject to the amendment, "Wavelength" on page 4, lines 2-3 of the specification of the amendment. 8700λ~1030λ
1030A from the wavelength of 8700λ and corrected as J. that's all
Claims (3)
面を持ち、その受光面上に隣接して入射光の反射防止の
ためめ反射防止膜を有し、前記ライトガイドの光の出射
面が前記受光面と対向するように取り付けられ、前記受
光面との空隙をマツチング剤で満した受光素子において
、前記反射防止膜の保護のために前記反射防止繰上に隣
接して光の吸収の少ない保護膜を形成したことを特徴と
する受光素子。(1) It has a light-receiving surface that receives light from the outside through the light guide, and has an anti-reflection film adjacent to the light-receiving surface to prevent reflection of incident light, and the light-emitting surface of the light guide is the light-receiving surface. In the light-receiving element that is attached to face the light-receiving surface and has a gap between the light-receiving surface and the light-receiving surface filled with a matting agent, a protective film with low light absorption is provided adjacent to the anti-reflection layer to protect the anti-reflection film. A light receiving element characterized in that:
しいことを特徴とする特許請求の範囲第（り項記載の受
光素子。(2) The light receiving element according to claim 1, wherein the refractive index of the protective film is equal to the refractive index of the matching agent by y.
コン樹脂を用いたことを特徴とする特許請求の範囲第（
２）項記載の受光素子。(3) Claim No. 1, characterized in that silicon dioxide is used for the protective film and silicone resin is used for the matting agent.
2) The light receiving element described in section 2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58151265A JPS6042875A (en) | 1983-08-17 | 1983-08-17 | Photo receiving element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58151265A JPS6042875A (en) | 1983-08-17 | 1983-08-17 | Photo receiving element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6042875A true JPS6042875A (en) | 1985-03-07 |
Family
ID=15514879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58151265A Pending JPS6042875A (en) | 1983-08-17 | 1983-08-17 | Photo receiving element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6042875A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07283426A (en) * | 1994-04-12 | 1995-10-27 | Mitsubishi Electric Corp | Light trigger type semiconductor device |
| US5621237A (en) * | 1994-04-12 | 1997-04-15 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
| US6611006B2 (en) * | 2000-05-17 | 2003-08-26 | Stmicroelectronics S.A. | Vertical component peripheral structure |
-
1983
- 1983-08-17 JP JP58151265A patent/JPS6042875A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07283426A (en) * | 1994-04-12 | 1995-10-27 | Mitsubishi Electric Corp | Light trigger type semiconductor device |
| US5596210A (en) * | 1994-04-12 | 1997-01-21 | Mitsubishi Denki Kabushiki Kaisha | Light trigger type semiconductor device with reflection prevention film |
| US5621237A (en) * | 1994-04-12 | 1997-04-15 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
| US6611006B2 (en) * | 2000-05-17 | 2003-08-26 | Stmicroelectronics S.A. | Vertical component peripheral structure |
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