CN110246753B - Preparation method and structure of epitaxial structure for improving p-type GaN doping concentration - Google Patents
Preparation method and structure of epitaxial structure for improving p-type GaN doping concentration Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 230000003213 activating effect Effects 0.000 claims abstract description 17
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
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Abstract
The invention relates to a preparation method of an epitaxial structure for improving p-type GaN doping concentration, which comprises the steps of growing a buffer layer on a substrate, growing a p-type GaN layer on the buffer layer, doping an activating agent when growing the p-type GaN layer, wherein the activating agent is In and/or Al, and the molar flow of the activating agent is 10-300 umol/min. An epitaxial structure for improving p-type GaN doping concentration is prepared by the preparation method. The invention introduces the activating agent when growing the p-type GaN, so that the doping concentration of the p-type GaN is improved, the quality of the p-type GaN is not influenced, and the doping concentration of at least 2e can be obtained18/cm‑3P-type GaN structure of (1).
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a preparation method and a structure of an epitaxial structure for improving p-type GaN doping concentration.
Background
The GaN and its series of materials called third generation semiconductors have important application values in the fields of optoelectronic devices and microelectronic devices. The research on GaN materials and devices has made a great progress, especially the commercialization of blue and green light emitting diodes with high GaN brightness and the successful development of long-life blue lasers are important signs of the breakthrough of GaN devices. Through the development of the last ten years, the GaN-based blue light LED has been successfully commercialized and is widely applied to the fields of landscape lamps, backlight sources and illuminating lamps.
At present, p-type GaN doping is a mature technology in the industry, but the doping concentration of p-type GaN is lower than 1e at the present stage18/cm-3Obtaining higher concentrations of p-GaN by conventional methods has great technical difficulties because when the p-GaN concentration is further increased by conventional methods, the corresponding p-GaN quality (the quality here refers mainly to crystal quality, including surface quality, when the doping concentration of pGaN is further increased, it will lead to crystal quality deterioration, i.e. XRD data will be deteriorated, and in addition, it will also lead to epitaxial tableThe facet becomes poor and no longer a mirror surface but becomes a frostlike surface) can deteriorate dramatically, thereby affecting the entire GaN epitaxial layer.
Disclosure of Invention
The invention aims to provide a preparation method of an epitaxial structure for improving the doping concentration of p-type GaN.
In order to achieve the purpose, the invention adopts the technical scheme that:
a preparation method of an epitaxial structure for improving p-type GaN doping concentration comprises the steps of growing a buffer layer on a substrate, growing a p-type GaN layer on the buffer layer, doping an activating agent when the p-type GaN layer grows, wherein the activating agent is In and/or Al, and the molar flow of the activating agent is 10-300 umol/min.
Preferably, the molar flow of the activating agent is 20-250 umol/min.
Preferably, one of Mg, Zn and Fe is doped during the growth of the p-type GaN layer, and when Mg is doped, GaN is grown at high temperature while CpMg is doped, and the doping concentration is 3e19/cm-3The above.
Preferably, NH is introduced at a temperature of 1000 ℃ to 1100 ℃3TMAl: growing the buffer layer on the substrate, and introducing NH at the temperature of 1000-1100 DEG C3TMGa: and growing the p-type GaN layer on the buffer layer.
Preferably, the growth thickness of the p-type GaN layer is 50-1500 nm.
Preferably, the buffer layer is an AlN buffer layer or a GaN buffer layer.
Preferably, the growth thickness of the buffer layer is 20-200 nm.
Preferably, the substrate is a sapphire substrate, a silicon carbide substrate or a silicon substrate.
Another object of the present invention is to provide an epitaxial structure with improved p-type GaN doping concentration.
In order to achieve the purpose, the invention adopts the technical scheme that:
an epitaxial structure for improving p-type GaN doping concentration is prepared by the preparation method.
Preferably, the epitaxial structure comprises a substrate, a buffer layer formed on the substrate, and a p-type GaN layer formed on the buffer layer, wherein the doping concentration of the p-type GaN layer is at least 2e18/cm-3。
In the present invention: in and/or Al are/is used as an activating agent to be added during the growth of the p-type GaN, and the obtained p-type GaN structure is still obtained, so that the doping concentration of the p-type GaN is improved; compared with the prior art In which In and Al are used as doping elements, a p-type InGaN structure, a p-type AlGaN structure or p-type InAlGaN is obtained, and the In and Al are doped to change an energy band structure so as to improve the crystal quality.
Due to the application of the technical scheme, compared with the prior art, the invention has the following advantages and effects:
the invention introduces the activating agent when growing the p-type GaN, so that the doping concentration of the p-type GaN is improved, the quality of the p-type GaN is not influenced, and the doping concentration of at least 2e can be obtained18/cm-3P-type GaN structure of (1).
Detailed Description
The technical solutions of the present invention will be described clearly and completely below, and it should be apparent that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships only for the convenience of describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The first embodiment is as follows:
a preparation method of an epitaxial structure for improving p-type GaN doping concentration comprises the following steps:
s1: selecting a substrate, wherein the substrate can be sapphire substrate, silicon carbide substrate, silicon substrate, etc.,
s2: NH is introduced at the temperature of 1000-1100 DEG C3TMAl: growing a buffer layer on the substrate, wherein the thickness of the buffer layer is 20-200 nm, the buffer layer can be an AlN buffer layer or a GaN buffer layer,
s3: NH is introduced at the temperature of 1000-1100 DEG C3TMGa: growing a p-type GaN layer on the buffer layer, wherein the growth thickness of the p-type GaN layer is 50-1500nm, such as 50nm, 100nm, 500nm, 1000nm, 1500nm, etc., and doping one of Mg, Zn, Fe, usually Mg, i.e. growing GaN at high temperature while doping CpMg, with doping concentration of 3e19/cm-3The above; and simultaneously doping an activating agent In, wherein the molar flow of In is 20-250 umol/min. And the desired epitaxial structure is obtained.
Wherein: in S3, different In contents were doped to obtain different p-type GaN doping concentrations, as shown In the following table:
example two:
a preparation method of an epitaxial structure for improving p-type GaN doping concentration comprises the following steps:
s1: selecting a substrate, wherein the substrate can be sapphire substrate, silicon carbide substrate, silicon substrate, etc.,
s2: NH is introduced at the temperature of 1000-1100 DEG C3TMAl: growing a buffer layer on the substrate, wherein the thickness of the buffer layer is 20-200 nm, the buffer layer can be an AlN buffer layer or a GaN buffer layer,
s3: NH is introduced at the temperature of 1000-1100 DEG C3TMGa: growing a p-type GaN layer on the buffer layer, wherein the growth thickness of the p-type GaN layer is 50-1500nm, such as 50nm, 100nm, 500nm, 1000nm, 1500nm, etc., and doping one of Mg, Zn, Fe, usually Mg, i.e. growing GaN at high temperature while doping CpMg, with doping concentration of 3e19/cm-3The above; and simultaneously doping an activating agent Al, wherein the molar weight of Al is 20-250 umol/min, and a required epitaxial structure is obtained.
Wherein: in S3, different Al contents are doped to obtain different p-type GaN doping concentrations, which are shown in the following table:
example three:
a preparation method of an epitaxial structure for improving p-type GaN doping concentration comprises the following steps:
s1: selecting a substrate, wherein the substrate can be sapphire substrate, silicon carbide substrate, silicon substrate, etc.,
s2: NH is introduced at the temperature of 1000-1100 DEG C3TMAl: growing a buffer layer on the substrate, wherein the thickness of the buffer layer is 20-200 nm, the buffer layer can be an AlN buffer layer or a GaN buffer layer,
s3: NH is introduced at the high temperature of 1000 ℃ to 1100 DEG C3TMGa: growing a p-type GaN layer on the buffer layer, wherein the growth thickness of the p-type GaN layer is 50-1500nm, such as 50nm, 100nm, 500nm, 1000nm, 1500nm, etc., and doping one of Mg, Zn, Fe, usually Mg, i.e. growing GaN at high temperature while doping CpMg, which is doped heavilyDegree of 3e19/cm-3The above; and simultaneously doping activating agents In and Al, wherein the total molar flow of the In and the Al is 10-300 umol/min, and the required epitaxial structure is obtained.
Wherein: in S3, different In and Al contents were doped to obtain different p-type GaN doping concentrations, as shown In the following table:
it should be noted that: the tables of the examples relate to doping concentrations and Hall concentrations, where: the doping concentration refers to the doping amount in the growth process; the Hall concentration is the actual doping amount tested, i.e. the amount actually doped into p-type GaN, and is an efficiency problem. For example: the doping concentration in the growth process is 3e19/cm-3But actually doped into the epitaxial layer only to 1e18/cm-3The invention point of this patent is that the improvement of the Hall concentration of p-type GaN is considered to be the improvement of the Hall concentration of p-type GaN except the doping concentration and the Hall concentration in the table.
The above embodiments are merely illustrative of the technical ideas and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (10)
1. A preparation method of an epitaxial structure for improving p-type GaN doping concentration comprises the following steps: growing a buffer layer on a substrate, growing a p-type GaN layer on the buffer layer, and doping one of Mg, Zn and Fe when growing the p-type GaN layer, which is characterized in that: and doping an activating agent when the p-type GaN layer grows, wherein the activating agent is Al, and the molar flow of the activating agent is 10-300 umol/min.
2. The method for preparing an epitaxial structure with an improved p-type GaN doping concentration according to claim 1, wherein the method comprises the following steps: the molar flow of the activating agent is 20-250 umol/min.
3. The method for preparing an epitaxial structure with an improved p-type GaN doping concentration according to claim 1, wherein the method comprises the following steps: when Mg is doped, GaN is grown at high temperature and CpMg is doped at the same time, and the doping concentration is 3e19/cm-3The above.
4. The method for preparing an epitaxial structure with an improved p-type GaN doping concentration according to claim 1, wherein the method comprises the following steps: introducing NH at the temperature of 1000-1100 DEG C3TMAl: growing said buffer layer on said substrate,
introducing NH at the temperature of 1000-1100 DEG C3TMGa: and growing the p-type GaN layer on the buffer layer.
5. The method for preparing an epitaxial structure with an improved p-type GaN doping concentration according to claim 1, wherein the method comprises the following steps: the growth thickness of the p-type GaN layer is 50-1500 nm.
6. The method for preparing an epitaxial structure with an improved p-type GaN doping concentration according to claim 1, wherein the method comprises the following steps: the buffer layer is an AlN buffer layer and a GaN buffer layer.
7. The method for preparing an epitaxial structure with an improved p-type GaN doping concentration according to claim 1, wherein the method comprises the following steps: the growth thickness of the buffer layer is 20-200 nm.
8. The method for preparing an epitaxial structure with an improved p-type GaN doping concentration according to claim 1, wherein the method comprises the following steps: the substrate is a sapphire substrate, a silicon carbide substrate or a silicon substrate.
9. The utility model provides a promote epitaxial structure of p type GaN doping concentration which characterized in that: which is produced by the production method according to any one of claims 1 to 8.
10. The epitaxial structure of claim 9, wherein the p-type GaN doping concentration is increased by: the epitaxial structure comprises a substrate, a buffer layer formed on the substrate, and a p-type GaN layer formed on the buffer layer, wherein the doping concentration of the p-type GaN layer is at least 2e18/cm-3。
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102867892A (en) * | 2012-09-06 | 2013-01-09 | 合肥彩虹蓝光科技有限公司 | In-doped low-temperature growth P type GaN epitaxial method |
| JP2013128009A (en) * | 2011-12-16 | 2013-06-27 | Stanley Electric Co Ltd | Nitride semiconductor device manufacturing method |
| CN109300851A (en) * | 2018-09-03 | 2019-02-01 | 淮安澳洋顺昌光电技术有限公司 | A kind of low temperature p-type GaN epitaxy piece with Al and In doped growing |
| CN109360877A (en) * | 2018-09-03 | 2019-02-19 | 淮安澳洋顺昌光电技术有限公司 | There is one kind In and Al to adulterate, the low temperature P type GaN epitaxial method of In gradual change growth |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013128009A (en) * | 2011-12-16 | 2013-06-27 | Stanley Electric Co Ltd | Nitride semiconductor device manufacturing method |
| CN102867892A (en) * | 2012-09-06 | 2013-01-09 | 合肥彩虹蓝光科技有限公司 | In-doped low-temperature growth P type GaN epitaxial method |
| CN109300851A (en) * | 2018-09-03 | 2019-02-01 | 淮安澳洋顺昌光电技术有限公司 | A kind of low temperature p-type GaN epitaxy piece with Al and In doped growing |
| CN109360877A (en) * | 2018-09-03 | 2019-02-19 | 淮安澳洋顺昌光电技术有限公司 | There is one kind In and Al to adulterate, the low temperature P type GaN epitaxial method of In gradual change growth |
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