CN110246640B - Noninvasive resistance value adjusting method - Google Patents

Noninvasive resistance value adjusting method Download PDF

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Publication number
CN110246640B
CN110246640B CN201910480866.XA CN201910480866A CN110246640B CN 110246640 B CN110246640 B CN 110246640B CN 201910480866 A CN201910480866 A CN 201910480866A CN 110246640 B CN110246640 B CN 110246640B
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China
Prior art keywords
omega
sintering
resistance value
belt speed
once
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CN201910480866.XA
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CN110246640A (en
Inventor
薛静蓉
郭菊芳
王永生
王丽莎
岳晴瑞
李岁萌
高思静
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Shaanxi Huajing Micro Electronic Co ltd
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Shaanxi Huajing Micro Electronic Co ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06573Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the permanent binder
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/22Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/22Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
    • H01C17/26Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by converting resistive material
    • H01C17/265Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by converting resistive material by chemical or thermal treatment, e.g. oxydation, reduction, annealing

Abstract

The invention discloses a method for repairing and adjusting a non-invasive resistance value, which is characterized by firstly searching the change rule of different resistance slurry in different sintering curves, sorting resistors according to the change rule, and then putting the sorted resistors in different sintering curves for re-burning until the resistance value meets the use requirement of a product, wherein the re-burning times are not more than two. The aim of trimming the resistor is achieved through resistor reburning, and the reburned product completely meets the requirements through resistance value testing, power testing and return loss testing. In addition, the power born by the re-sintered qualified product is consistent with that born by the qualified product after normal sintering once, and the return loss performance is consistent.

Description

Noninvasive resistance value adjusting method
Technical Field
The invention relates to a thick film printed ceramic circuit board, in particular to a thick film protective resistor.
Background
Along with the gradual increase of the power of the thick film protection resistor, the resistance trimming has larger and larger influence on the resistance power, and the power of the resistor in unit area is greatly reduced by resistance laser resistance trimming, so that the product is finally failed. In view of the above situation, higher requirements are put on the thick film protection resistor film forming process. And a method combining a thick film forming process and resistor re-firing is adopted to perform noninvasive resistance adjustment on the thick film protective resistor. The non-invasive resistance value adjustment is developed and improved for improving the power of the thick film protective resistor.
The resistance of the ALN-based power load series product needs to bear larger power in a limited area, so that the resistance value meets the technical requirement under the condition of a certain resistance area. The power resistor is printed to more than 65% of a nominal value under the general condition of thick film resistor printing, and the resistance value can reach 100% +/-0.8% of the nominal value after laser trimming. However, in the power load series products, since the resistor needs to bear high power, if the area of the resistor is damaged after laser trimming, the product performance cannot meet the use requirement, and therefore, a method which does not damage the area of the resistor and can enable the resistance value to meet the requirement is urgently needed to produce the power load series products.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a noninvasive resistance value trimming method, which can not only meet the resistance value precision requirement of a protective resistor, but also have good power requirement and improve the reliability of a product.
The technical scheme for realizing the purpose of the invention is as follows: a non-invasive resistance value trimming method is characterized in that firstly, a resistor testing method is carried out, batch printing is carried out after the testing method is qualified, products printed with resistors are placed into a 850 ℃ sintering curve for primary sintering, resistance value grading is carried out according to a re-sintering rule searched out in advance after resistor sintering is finished, and then the graded products are placed into different sintering curves for re-sintering until the resistance values of the products are qualified; the power born by the re-sintered qualified product is consistent with that born by the qualified product after normal sintering once, and the return loss performance is consistent.
The aim of trimming the resistor is achieved through resistor reburning, and the reburned product completely meets the requirements through resistance value testing, power testing and return loss testing.
Detailed Description
The invention utilizes the sintering furnace of the existing production equipment of the production line to adjust the resistance value according to the change rule of the resistance slurry at different sintering temperatures and different strip speeds. Through experiments, the following rules are found: re-burning the ALN-based power load series resistance slurry under a curve of 750 degrees, so that the resistance value is increased; after re-burning under the curve of 820 degrees, the resistance value is increased; after re-burning under a curve of 840 degrees, the resistance value becomes small; after re-burning under the curve of 850 degrees, the resistance value becomes small.
When the proportion of the resistor paste is different, the proportion of the resistor paste is slightly different.
For example, the proportion of the resistance paste is 100 omega/□: when the resistance value of 10 omega/□ is 4:1 (the qualified resistance value range of 100W products is 47.5-52 omega), the products can be repaired in grades according to the following rules:
45.0 Ω or less: the temperature is 750 ℃, the belt speed is 4.8inch/min, and the resistance value is increased by 4-5 omega.
45.1-47.4 omega: the temperature is 750 ℃, the belt speed is 5.9inch/min, and the resistance value is increased by 2-3 omega.
52.1-54.4 omega: the temperature is 840 ℃, the belt speed is 5.9inch/min, and the resistance value is reduced by 2-3 omega.
54.5-57.9 omega: the temperature is 850 ℃, the belt speed is 4.8inch/min, and the resistance value is reduced by 5-7 omega.
58-62 omega: sintering twice at 850 deg.C and belt speed of 4.8inch/min, and reducing resistance by 8-10 Ω.
62.1 Ω or more: the mixture is overprinted by thinner, the temperature is 850 ℃, and the belt speed is 4.8inch/min for sintering once.
For example, the proportion of the resistance paste is 100 omega/□: when the resistance value of 10 omega/□ is 3:2 (the qualified resistance value range of 150W products is 47.6-50.5 omega), the products can be repaired in grades according to the following rules:
44.0 Ω below: the temperature is 750 ℃, the belt speed is 5.9inch/min, and the resistance value is increased by 6-7 omega.
44.1-46.7 omega: the temperature is 750 ℃, the belt speed is 5.9inch/min, and the resistance value is increased by 4-5 omega.
46.8-47.5 omega: the temperature is 820 ℃, the belt speed is 5.9inch/min, and the resistance value is increased by 2-3 omega.
50.6-52.0 omega: the temperature is 840 ℃, the belt speed is 4.8inch/min, and the resistance value is increased by 1-2 omega.
52.1-53.5 Ω: the temperature is 850 ℃, the belt speed is 4.8inch/min, and the resistance value is increased by 3-4 omega.
53.6-54.5 Ω: sintering twice at 850 ℃ and the belt speed of 4.8inch/min, and increasing the resistance value by 4-5 omega.
54.6 Ω or more: the mixture is overprinted by thinner, the temperature is 850 ℃, and the belt speed is 4.8inch/min for sintering once.
The specific operation method comprises the following steps: firstly, resistance testing is carried out, and batch printing can be carried out after the testing is qualified. And (3) putting the printed product of the resistor into a 850 ℃ sintering curve for primary sintering, grading the resistance value according to a re-sintering rule found in advance after the resistor sintering is finished, and putting the graded product into different sintering curves for repairing until the resistance value of the product is qualified. In addition, the power born by the re-sintered qualified product is consistent with that born by the qualified product after normal sintering once, and the return loss performance is consistent.
The above embodiments are only for illustrating the technical solutions of the present invention, and the present invention is not limited to the above embodiments, and any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (1)

1. A method for repairing and adjusting the atraumatic resistance of ALN-based power load series resistors is characterized by comprising the steps of firstly testing resistors, printing in batches after the testing is qualified, putting products with the printed resistors into a 850 ℃ sintering curve for primary sintering, grading the resistance according to a re-sintering rule searched in advance after the resistor sintering is finished, and putting the graded products into different sintering curves for re-sintering until the resistance of the products is qualified; the power born by the re-sintered qualified product is consistent with that born by the qualified product which is normally sintered once, and the return loss performance is consistent;
the proportion of the resistance paste is 100 omega/□: when the ratio of 10 omega/□ is 4:1, the raw materials are repeatedly burned in different steps according to the following rule:
45.0 Ω or less: sintering twice at the temperature of 750 ℃ and the belt speed of 4.8inch/min, and increasing the resistance value by 4-5 omega;
45.1-47.4 omega: sintering at the temperature of 750 ℃ and the belt speed of 5.9inch/min once, and increasing the resistance value by 2-3 omega;
52.1-54.4 omega: sintering at 840 ℃ and the belt speed of 5.9inch/min once, and reducing the resistance value by 2-3 omega;
54.5-57.9 omega: sintering at 850 ℃ and the belt speed of 4.8inch/min once, and reducing the resistance value by 5-7 omega;
58-62 omega: sintering twice at 850 ℃ and the belt speed of 4.8inch/min, and reducing the resistance value by 8-10 omega;
62.1 Ω or more: overprinting by using thinner, and sintering once at 850 ℃ and the belt speed of 4.8 inch/min;
the proportion of the resistance paste is 100 omega/□: when the ratio of 10 omega/□ is 3:2, the raw materials are repeatedly burned in different steps according to the following rule:
44.0 Ω below: sintering twice at the temperature of 750 ℃ and the belt speed of 5.9inch/min, and increasing the resistance value by 6-7 omega;
44.1-46.7 omega: sintering at the temperature of 750 ℃ and the belt speed of 5.9inch/min once, and increasing the resistance value by 4-5 omega;
46.8-47.5 omega: sintering at 820 ℃ at the belt speed of 5.9inch/min once, and increasing the resistance value by 2-3 omega;
50.6-52.0 omega: sintering at 840 ℃ and the belt speed of 4.8inch/min once, and increasing the resistance value by 1-2 omega;
52.1-53.5 Ω: sintering at 850 ℃ and a belt speed of 4.8inch/min once, and increasing the resistance value by 3-4 omega;
53.6-54.5 Ω: sintering twice at 850 ℃ and the belt speed of 4.8inch/min, and increasing the resistance value by 4-5 omega;
54.6 Ω or more: the mixture is overprinted by thinner, the temperature is 850 ℃, and the belt speed is 4.8inch/min for sintering once.
CN201910480866.XA 2019-06-04 2019-06-04 Noninvasive resistance value adjusting method Active CN110246640B (en)

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CN111898270B (en) * 2020-07-31 2023-11-21 广东风华高新科技股份有限公司 Slurry blocking accurate proportioning method, medium and terminal equipment

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CN2307364Y (en) * 1997-09-15 1999-02-10 国营第八九五厂 Program-controlled switchboard subscriber's line thick film protector
CN101211683B (en) * 2006-12-29 2010-04-07 深圳市振华微电子有限公司 Temperature coefficient accurate setting electric resistor and manufacture thereof
CN101620900A (en) * 2009-08-13 2010-01-06 南通鸿飞电子有限公司 Method for increasing PTC thermistance yield by reducing resistance value
TWI523050B (en) * 2011-11-18 2016-02-21 Prosperity Dielectrics Co Ltd Multi - layer co - fired laminated stacked chip resistors and manufacturing method thereof
JP6491032B2 (en) * 2015-04-24 2019-03-27 スタンレー電気株式会社 Manufacturing method of resistor and resistor
KR101690720B1 (en) * 2015-07-31 2016-12-28 동의대학교 산학협력단 Mn/Co/Bi/Dy added ZnO-V2O5 based varistor and manufacturing method for the same
KR101771817B1 (en) * 2015-12-18 2017-08-25 삼성전기주식회사 Chip Resistor
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