CN110243501A - The quantum pressure sensor and preparation method of a kind of diamond nitrogen vacancy colour center - Google Patents
The quantum pressure sensor and preparation method of a kind of diamond nitrogen vacancy colour center Download PDFInfo
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- CN110243501A CN110243501A CN201910570946.4A CN201910570946A CN110243501A CN 110243501 A CN110243501 A CN 110243501A CN 201910570946 A CN201910570946 A CN 201910570946A CN 110243501 A CN110243501 A CN 110243501A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/12—Measuring force or stress, in general by measuring variations in the magnetic properties of materials resulting from the application of stress
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/16—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in the magnetic properties of material resulting from the application of stress
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
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Abstract
The invention belongs to the pressure sensing devices fields of MEMS (MEMS), and specifically disclose the quantum pressure sensor and preparation method of a kind of diamond nitrogen vacancy colour center.The sensor includes basal layer, the bottom of basal layer is etched with cavity, insulating layer is deposited at the top of basal layer, the diamond film layer with nitrogen vacancy colour center is deposited at the top of insulating layer, the top of insulating layer is also sputtered there are two the ferrite, and two ferrites are arranged symmetrically about the diamond film layer.The method includes depositing a layer insulating at the top of the basal layer, etches to obtain cavity in the bottom of basal layer, deposit one layer of diamond film layer and two ferrites being arranged symmetrically with nitrogen vacancy colour center at the top of insulating layer.The present invention can go to realize the high-sensitivity measurement to pressure by the spin attribute of electronics, greatly improve the sensitivity of pressure sensor.
Description
Technical field
The invention belongs to the pressure sensing devices fields of MEMS (MEMS), more particularly, to a kind of diamond
The quantum pressure sensor and preparation method of nitrogen vacancy colour center.
Background technique
Pressure measurement is in various fields such as automobile, automatic control, robot, national defence, aerospace, medical treatment, intelligence equipments
There is extremely important effect.Traditional pressure measurement is that data relevant to pressure are obtained using the charge attribute of electronics.
Such as silicon piezoresistance type pressure sensor, varistor is realized using silicon doping, the variation of pressure leads to the variation of electric current, and electric current is
Performance of the charge attribute of electronics when electronics is mobile.
Other than silicon materials, nanometer carbon group material also has been demonstrated the piezoresistance coefficient for having certain.Such as carbon nanotube pressure drag
Application has obtained experimental verification to characteristic in pressure sensor, but carbon nanotube and substrate adhesion are poor.Graphene conduct is most thin
Material, it can be adhered in various surface-stables, be resistant to 30% strain, existing research discovery, when graphene is stretched or is compressed
When effect, significant change can occur for resistance, and variation is in good linear relationship in a certain range.But current pressure sensor
The intrinsic graphene used is in semiconductor or Half-metallic, pressure drag property is by graphene band structure for zero band gap material
Limitation, piezoresistance coefficient are low compared with single crystal silicon material.The raising of traditional Sensitivity in Pressure Sensors is increasingly difficult to.Quantum senses
It goes to realize the high-sensitivity measurement to physical quantity using the spin attribute of electronics.Diamond nitrogen vacancy (NV) colour center is quantum sensing
Most important representative, and diamond is also carbon group material.Diamond NV colour center is a carbon atom quilt in diamond crystal
Nitrogen-atoms replaces and ortho position carbon atom lacks the point defect to form hole and constitute.Diamond nitrogen vacancy colour center is passed in micro-nano pressure
Application in inductor component has good prospect.
Therefore, this field urgently proposes a kind of quantum pressure sensor based on diamond nitrogen vacancy colour center, with effectively into
One step improves the sensitivity of pressure sensor, and then solves the problems, such as that Sensitivity in Pressure Sensors is difficult to improve.
Summary of the invention
Aiming at the above defects or improvement requirements of the prior art, the present invention provides a kind of amounts of diamond nitrogen vacancy colour center
Sub- pressure sensor and preparation method are solved conventional pressure sensor and are obtained pressure value using charge attribute, and then sensitive
The limited problem of degree, the feature of combination pressure sensor itself and the process characteristic of diamond nitrogen vacancy colour center, it is corresponding to design
A kind of quantum pressure sensor of diamond nitrogen vacancy colour center, and to its key component such as basal layer, cavity, insulating layer, gold
Hard rock film layer and ferritic structure and its specific set-up mode are studied and are designed, and can pass through the spin of electronics accordingly
Attribute goes to realize the high-sensitivity measurement to pressure, greatly improves the sensitivity of pressure sensor, is therefore particularly suitable for receiving
The MEMS application of meter Sheng Hua and nanodoc etc..
To achieve the above object, according to one aspect of the present invention, a kind of quantum of diamond nitrogen vacancy colour center is proposed
Pressure sensor, including basal layer, the bottom of the basal layer are etched with cavity, insulation are deposited at the top of the basal layer
Layer, it is deposited with the diamond film layer with nitrogen vacancy colour center at the top of the insulating layer, the diamond film layer is located at institute
The surface of cavity is stated, and the cross section of the diamond film layer is greater than the cross section of the cavity, the top of the insulating layer
Portion is also sputtered there are two the ferrite, and two ferrites are arranged symmetrically about the diamond film layer, by this method,
When the pressure of the quantum pressure sensor changes, the nitrogen vacancy colour center of the diamond film layer with nitrogen vacancy colour center
Spin-flip, energy level is anti-raw to be changed, and is detected the energy level variations by optical detection magnetic resonance spectrum, is obtained the size of the pressure value.
Further, the depth of the cavity is not more than the thickness of basal layer, and the cross section of the cavity is rectangle, the rectangle
Length-width ratio is greater than or equal to 2.
Further, the cross section of the diamond film layer is rectangle.
Further, the diamond film layer is doped with silicon vacancy colour center and/or germanium vacancy colour center.
Further, the material of the basal layer is silicon, and the material of the insulating layer is silica.
Further, the bottom of the basal layer is also bonded with glass, and the glass is equipped with coaxial with the cavity
Through-hole.
It is another aspect of this invention to provide that providing a kind of preparation side of the quantum pressure sensor of diamond nitrogen vacancy colour center
Method, comprising the following steps:
S1 carries out clean silicon wafer to portray processing, obtains basal layer, deposits one layer of insulation at the top of the basal layer
Layer；
S2 successively carries out photoetching treatment and etching to the bottom for the basal layer for being deposited with the insulating layer, to obtain bottom tool
There is the basal layer of cavity；
S3 deposits one layer of diamond thin with nitrogen vacancy colour center at the top of the insulating layer, then to the diamond
Film successively carries out pattern etching and doping treatment, to obtain the surface for being located at the cavity and cross section greater than the cavity
Cross section the diamond film layer with nitrogen vacancy colour center；
S4 successively sputters one layer of iron oxygen film at the top for the insulating layer for being deposited with diamond film layer, and to the iron oxygen film into
Row etching processing, to obtain two ferrites being arranged symmetrically about the diamond film layer, so that diamond be prepared
The quantum pressure sensor of nitrogen vacancy colour center.
Further, in step S1, one layer is deposited at the top of the basal layer using low-pressure chemical vapour deposition technique
Insulating layer, the material of the insulating layer are silica；In step S2, the depth of the cavity is not more than the thickness of basal layer,
The cross section of the cavity is rectangle, which is greater than or equal to 2.
Further, it in step S3, is obtained and is deposited with nitrogen sky using the method that microwave plasma chemical is vapor-deposited
The diamond thin of position colour center；Crystalline size in the diamond thin with nitrogen vacancy colour center is not less than 50nm；It is described
Doping treatment includes the diamond thin silicon atom and/or the germanium atom after pattern etching, to obtain doped with silicon
The diamond film layer of vacancy colour center and/or germanium vacancy colour center.
Further, the preparation method further include: the bottom of the basal layer with cavity is bonded with glass, and
The through-hole with the cavity coaxial line is etched on the glass.
In general, through the invention it is contemplated above technical scheme is compared with the prior art, mainly have below
Technological merit:
1. the film of induction pressure of the present invention is the diamond film layer with nitrogen vacancy colour center, setting is free below
Chamber, meanwhile, two sides have been arranged symmetrically ferrite, and then when the pressure acted on pressure sensor changes, Buddha's warrior attendant
Stone nitrogen vacancy colour center film interior and exterior generates pressure difference, and since stress variation leads to its nitrogen vacancy colour center spin-flip, energy level is also sent out
It is raw to change, which can be detected by optical detection magnetic resonance spectrum, to obtain pressure signal, the present invention can by electronics from
Rotation attribute goes to realize the high-sensitivity measurement to pressure, greatly improves the sensitivity of pressure sensor, is therefore particularly suitable for
Nanometer is biochemical and the MEMS application of nanodoc etc..
2. the depth of cavity of the present invention is not more than the thickness of basal layer, the cross-sectional area of the cavity is rectangle, and the rectangle is long
It is wide than being greater than or equal to 2 so that the side of being provided thereon and the diamond film layer of its cross section be completely covered being acted in pressure
It is lower to occur, and then diamond nitrogen vacancy colour center film interior and exterior generates pressure difference.
3. the bottom of basal layer of the present invention is also bonded with glass, the glass is equipped with the through-hole coaxial with cavity, can be real
Now to the encapsulation of pressure sensor, meanwhile, channel of the through-hole as pressure, pressure through hole acts on pressure sensitive film.
4. diamond film layer of the present invention is also doped with silicon vacancy colour center and/or germanium vacancy colour center, for further increasing
The stability of diamond film layer, to further increase the sensitivity of pressure sensor.
5. the preparation method of pressure sensor of the present invention uses inductively coupled plasma etching, low-pressure chemical gaseous phase
The quantum pressure sensor of diamond nitrogen vacancy colour center is prepared in sedimentation and the method for microwave plasma chemical vapor deposition,
Preparation method is simple, and preparation-obtained pressure sensor can go to realize to the highly sensitive of pressure by the spin attribute of electronics
Degree measurement, greatly improves the sensitivity of pressure sensor, is therefore particularly suitable for the microcomputer of nanometer biochemistry and nanodoc etc.
Electric system application.
6. there is the present invention crystalline size in the diamond thin of nitrogen vacancy colour center to be not less than 50nm, in diamond thin
Nitrogen vacancy colour center it is high-efficient, and then greatly improve the sensitivity of pressure sensor.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of the quantum pressure sensor of diamond nitrogen vacancy of the present invention colour center；
Fig. 2 is a kind of exploded view of the quantum pressure sensor for diamond nitrogen vacancy colour center that Fig. 1 is related to.
In all the appended drawings, identical appended drawing reference is used to denote the same element or structure, in which: 1- glass, 2- base
Bottom, 3- insulating layer, 4- ferrite, 5- diamond film layer.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below
Not constituting a conflict with each other can be combined with each other.
As depicted in figs. 1 and 2, a kind of quantum pressure sensor of diamond nitrogen of the invention vacancy colour center includes: basal layer
2, insulating layer 3, ferrite 4 and diamond film layer 5, wherein the bottom of basal layer 2 is etched with cavity, the cavity be through
In the through silicon via of basal layer 2 or the cavity be the silicon blind hole not extended through in basal layer 2.The top of basal layer 2 is covered with absolutely
Edge layer 3, the top of insulating layer 3 are deposited with diamond film layer 5 and ferrite 4, diamond film layer 5 be set to cavity just on
Side, and the cross section of diamond film layer 5 is not less than the cross section of the cavity, to realize that diamond film layer 5 can cover completely
The cross section of lid cavity.There are two the settings of ferrite 4, and two ferrites 4 are separately positioned on the edge of two opposite side of insulating layer 3
Place.As a preferred solution of the present invention, two ferrites 4 are that symmetrical pumping is arranged symmetrically with the central axis of diamond film layer 5.
In the present invention, the material of basal layer 2 is silicon, and the material of insulating layer 3 is silicon nitride.The shape of cavity cross section is excellent
Choosing is rectangle or circle, but is not limited to above two shape, and there is symmetrical structure shape or regular polygon to be able to satisfy
Requirement of the invention.Diamond film layer 5 is that diamond nitrogen vacancy (NV) colour center is prepared using MPCVD deposition.Meanwhile gold
The needs of hard rock film layer 5 are doped, silicon atom or germanium atom, miscellaneous have silicon vacancy colour center and/or germanium vacancy color to obtain
The diamond film layer 5 of the heart, the concentration of doping are 1E13/m3To 1E20/m3.When work, the diamond nitrogen of diamond film layer 5
Vacancy colour center issues the fluorescence signal for having modulation intelligence, if acting on diamond nitrogen in the case where microwave and laser act on simultaneously
Pressure on the colour center of vacancy changes, and diamond thin is deformed under pressure, to have strain in film and answer
Power leads to diamond nitrogen vacancy colour center energy shift, meanwhile, which will make the optical detection magnetic resonance resonance peak of electronics
It changes, which is modulated fluorescence signal, then handles modulated fluorescence signal, can obtain pressure
Size.
The quantum pressure sensor working principle of diamond nitrogen vacancy colour center of the invention is as follows: using 532nm wavelength
Laser polarizes to the diamond film layer 5 of pressure sensor, can grade transition occurs after absorbing energy.Microwave signal
It is acted on diamond film layer 5 by ferrite, so that the diamond nitrogen vacancy colour center in diamond film layer 5 is from conpound salto
Turn.Diamond nitrogen vacancy colour center issues the fluorescence signal for having modulation intelligence, is received by object lens in the case where microwave and laser act on simultaneously
Collection, through dichroscope, focuses by planoconvex lens, and filters, and is acquired into photodetector.If acting on diamond
Pressure on the colour center of nitrogen vacancy changes, which changes the optical detection magnetic resonance resonance peak for making electronics,
The variation is modulated fluorescence signal, handles collected fluorescence signal, can obtain the size of pressure.
The present invention also provides a kind of preparation methods of the quantum pressure sensor of diamond nitrogen vacancy colour center, specific to wrap
Include following steps:
Step 1: carrying out clean silicon wafer to portray processing, obtain basal layer 2, at the top of the basal layer 2 using low
Pressure chemical vapor sedimentation (LPCVD) depositing insulating layer 3, wherein the upper surface of basal layer 2 is completely covered in insulating layer 3, insulation
The material of layer 3 is silica.
Step 2: photoetching treatment being carried out to the bottom for the basal layer 2 for being deposited with the insulating layer 3, then using inductively
Plasma etching (ICP) method performs etching the lower surface of the substrate after photoetching treatment, to obtain the base that bottom has cavity
Bottom 2；Wherein, the depth of cavity is not more than the thickness of basal layer 2, and the cross section of the cavity is rectangle, and the rectangular aspect ratio is big
In or equal to 2.
Step 3: at the top of the insulating layer 3 using microwave plasma chemical gas phase deposition technology (MPCVD) deposition one
Layer has the diamond thin of nitrogen vacancy colour center, then successively carries out pattern etching and doping treatment to the diamond thin, with
Obtain be located at the cavity surface and cross section be greater than the cavity cross section diamond film layer 5；Wherein, described
Crystalline size in diamond thin with nitrogen vacancy colour center is not less than 50nm.In order to further enhance the steady of pressure sensor
Qualitative, the doping treatment includes the diamond thin silicon atom and/or the germanium atom after pattern etching, to obtain
Doped with silicon vacancy colour center and/or the diamond film layer 5 of germanium vacancy colour center.
Step 4: successively sputtering one layer at the top for the insulating layer 3 for being deposited with diamond film layer 5 using sputtering equipment S4
Iron oxygen film, and processing is performed etching to the iron oxygen film, to obtain two iron oxygen being arranged symmetrically about the diamond film layer 5
Body 4.
Step 5: there is the bottom of the basal layer 2 of cavity to be bonded with glass the bottom, and etched on the glass
With the through-hole of the cavity coaxial line, so that the quantum pressure sensor of diamond nitrogen vacancy colour center be prepared.
In step 3, in vacuum environment, make CH by the way of the excitation of microwave4And H2The molecule ionization of gas produces
Raw C ionized gas, the C ionized gas deposit at the top of the insulating layer 3, obtain nano-diamond membrane；To the nanogold
N atom is injected in hard rock film, forms the nano-diamond membrane doped with nitrogen-atoms；Using electron beam to described doped with nitrogen-atoms
Nano-diamond membrane irradiated, and under ultra-high vacuum environment, the nanometer Buddha's warrior attendant doped with nitrogen-atoms is eliminated in short annealing
The distortion of lattice and residual stress of stone film, high annealing, migrates vacancy under vacuum, and captures electronics, forms NV color
The heart.
Embodiment 1
(a) one 100 μm~500 μ m-thick silicon wafers are taken, Surface L PCVD deposits the silicon nitride of one layer of 1 μm~50 μ m-thick on it.
(b) photoetching is carried out to the lower surface of silicon wafer, etches to obtain cavity using ICP, the depth of cavity back chamber is not more than
The thickness of silicon wafer.The cross-sectional area of the cavity is rectangle, which is equal to 2.
(c) MPCVD depositing diamond film is carried out to silicon nitride upper surface, and pattern etching is carried out to diamond thin,
Diamond thin is doped；When MPCVD depositing diamond film, high-pressure microwave plasma is used under ultra-high vacuum
CH4、H2Gas inspires C atom, carries out ion implanting to diamond thin relevant position, forms the Buddha's warrior attendant doped with nitrogen-atoms
Stone film.Then diamond thin is irradiated using high-power electron beam, generates vacancy.Under ultrahigh vacuum, short annealing
Distortion of lattice and residual stress are eliminated, high annealing, migrates vacancy under vacuum, and captures electronics, forms NV colour center.
(d) microwave antenna ferrite film is deposited using sputtering equipment, and ferrite film pattern is obtained by etching.
(e) lower surface of silicon wafer is bonded with glass.
Embodiment 2
(a) one 200 μ m-thick silicon wafers are taken, Surface L PCVD deposits the silicon nitride of one layer of 1 μ m-thick on it.
(b) photoetching is carried out to the lower surface of silicon wafer, etches to obtain cavity using ICP, the depth of cavity back chamber is not more than
The thickness of silicon wafer.The cross-sectional area of the cavity is rectangle, which is equal to 5.
(c) MPCVD depositing diamond film is carried out to silicon nitride upper surface, and pattern etching is carried out to diamond thin,
Diamond thin is doped；When MPCVD depositing diamond film, high-pressure microwave plasma is used under ultra-high vacuum
CH4、H2Gas inspires C atom, carries out ion implanting to diamond thin relevant position, is formed former doped with nitrogen-atoms, silicon
The diamond thin of son or germanium atom.Then diamond thin is irradiated using high-power electron beam, generates vacancy.In superelevation
Under vacuum, distortion of lattice and residual stress are eliminated in short annealing, and high annealing, migrates vacancy under vacuum, and captures
Electronics forms nitrogen vacancy colour center, silicon vacancy colour center or germanium vacancy colour center.
(d) microwave antenna ferrite film is deposited using sputtering equipment, and ferrite film pattern is obtained by etching.
(e) lower surface of silicon wafer is bonded with glass.
The film of induction pressure of the present invention is the diamond film layer with nitrogen vacancy colour center, is provided with cavity below,
Meanwhile two sides have been arranged symmetrically ferrite, and then when the pressure acted on pressure sensor changes, diamond nitrogen
Vacancy colour center film interior and exterior generates pressure difference, and since stress variation leads to its nitrogen vacancy colour center spin-flip, energy level also changes
Become, which can be detected by optical detection magnetic resonance spectrum, to obtain pressure signal, the present invention can pass through the spin category of electronics
Property goes to realize the high-sensitivity measurement to pressure, greatly improves the sensitivity of pressure sensor, is therefore particularly suitable for nanometer
The MEMS application of biochemical and nanodoc etc..
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should all include
Within protection scope of the present invention.
Claims (10)
1. a kind of quantum pressure sensor of diamond nitrogen vacancy colour center, which is characterized in that including basal layer (2), the substrate
The bottom of layer (2) is etched with cavity, is deposited with insulating layer (3) at the top of the basal layer (2), the top of the insulating layer (3)
Be deposited with the diamond film layer (5) with nitrogen vacancy colour center, the diamond film layer (5) be located at the cavity just on
Side, and the cross section of the diamond film layer (5) is greater than the cross section of the cavity, the top of the insulating layer (3) is also splashed
It penetrates there are two ferrite (4), two ferrites (4) are arranged symmetrically about the diamond film layer (5), by this method,
When the pressure of the quantum pressure sensor changes, the nitrogen vacancy of the diamond film layer (5) with nitrogen vacancy colour center
Colour center spin-flip, energy level is anti-raw to be changed, and detects the size of energy level change, by optical detection magnetic resonance spectrum to obtain the pressure
Size.
2. quantum pressure sensor as described in claim 1, which is characterized in that the depth of the cavity is not more than basal layer
(2) thickness, the cross section of the cavity are rectangle, which is greater than or equal to 2.
3. quantum pressure sensor as described in claim 1, which is characterized in that the cross section of the diamond film layer (5)
For rectangle.
4. quantum pressure sensor as described in claim 1, which is characterized in that the diamond film layer (5) is doped with silicon
Vacancy colour center and/or germanium vacancy colour center.
5. quantum pressure sensor as described in claim 1, which is characterized in that the material of the basal layer (2) is silicon, described
The material of insulating layer (3) is silica.
6. quantum pressure sensor as described in any one in claim 1-5, which is characterized in that the bottom of the basal layer (2)
It is also bonded with glass, the glass is equipped with the through-hole coaxial with the cavity.
7. a kind of preparation method of the quantum pressure sensor of the diamond nitrogen vacancy colour center as described in claim any one of 1-6,
Characterized by comprising the following steps:
S1 carries out clean silicon wafer to portray processing, obtains basal layer (2), deposits one layer absolutely at the top of the basal layer (2)
Edge layer (3)；
S2 successively carries out photoetching treatment and etching to the bottom for the basal layer (2) for being deposited with the insulating layer (3), to obtain bottom
Basal layer (2) with cavity；
S3 deposits one layer of diamond thin with nitrogen vacancy colour center at the top of the insulating layer (3), then to the diamond
Film successively carries out pattern etching and doping treatment, to obtain the surface for being located at the cavity and cross section greater than the cavity
Cross section the diamond film layer (5) with nitrogen vacancy colour center；
S4 successively sputters one layer of iron oxygen film at the top for being deposited with the insulating layer of diamond film layer (5) (3), and to the iron oxygen film
Processing is performed etching, to obtain two ferrites (4) being arranged symmetrically about the diamond film layer (5), to be prepared into
To the quantum pressure sensor of diamond nitrogen vacancy colour center.
8. preparation method as claimed in claim 7, which is characterized in that in step S1, using low-pressure chemical vapour deposition technique
A layer insulating (3) are deposited at the top of the basal layer (2), the material of the insulating layer (3) is silica；Step S2
In, the depth of the cavity is not more than the thickness of basal layer (2), and the cross section of the cavity is rectangle, which is greater than
Or it is equal to 2.
9. preparation method as claimed in claim 7, which is characterized in that heavy using microwave plasma chemical gas phase in step S3
Long-pending method obtains and deposits the diamond thin with nitrogen vacancy colour center；In the diamond thin with nitrogen vacancy colour center
Crystalline size be not less than 50nm；The doping treatment includes the diamond thin silicon atom after pattern etching
And/or germanium atom, to obtain doped with silicon vacancy colour center and/or the diamond film layer (5) of germanium vacancy colour center.
10. such as the described in any item preparation methods of claim 7-9, which is characterized in that the preparation method further include: will be described
The bottom of basal layer (2) with cavity is bonded with glass, and the through-hole with the cavity coaxial line is etched on the glass.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110835741A (en) * | 2019-10-28 | 2020-02-25 | 北京科技大学 | Method for preparing diamond nitrogen-nickel composite color center through ion implantation |
| CN112331724A (en) * | 2020-10-21 | 2021-02-05 | 中国电子科技集团公司第十三研究所 | Diamond NV color center photoelectric sensor, array and preparation method thereof |
| CN113049996A (en) * | 2021-03-09 | 2021-06-29 | 郑州大学 | Mixed microwave integrated circuit sensor based on diamond nitrogen vacancy color center |
| KR20220060854A (en) * | 2020-11-05 | 2022-05-12 | 한국표준과학연구원 | Appratus for sensing temperature using diamond nitrogen vacancy sensor and method for fabricating the same |
| CN115072717A (en) * | 2022-06-10 | 2022-09-20 | 哈尔滨工业大学 | Method for preparing fixed-point shallow NV color center by etching high-temperature high-pressure diamond with metallic iron |
| WO2023025049A1 (en) * | 2021-08-24 | 2023-03-02 | The University Of Hong Kong | Fabrication of scalable quantum sensing device through precisely programmable patterning spin defects on universal substrates |
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