CN106768514A - The preparation method and pressure sensor of pressure sensor - Google Patents
The preparation method and pressure sensor of pressure sensor Download PDFInfo
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- CN106768514A CN106768514A CN201611218453.7A CN201611218453A CN106768514A CN 106768514 A CN106768514 A CN 106768514A CN 201611218453 A CN201611218453 A CN 201611218453A CN 106768514 A CN106768514 A CN 106768514A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
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Abstract
The present invention relates to the preparation method and pressure sensor of a kind of pressure sensor, the preparation method comprises the following steps：S1：There is provided has the back side and positive wafer；Pressure drag bar and heavily doped contact zone are formed in the front of wafer；Pressure depth chamber is formed by the back-etching of wafer；S2：Support chip is bonded at the back side of wafer；S3：Fairlead and metal connecting line are made in the front of wafer, connection pressure drag bar forms Wheatstone bridge；S4：Deposit to form passivation layer in the front of wafer, open portion of the passivating layer to form metal pad region.Be placed on bonding technology after high-temperature diffusion process by the preparation method of the pressure sensor, before metal connecting line technique, so as to avoid the influence of high-temperature diffusion process para-linkage technique, the pressure sensitive film for preventing high-temperature diffusion process to destroy on vacuum chamber, and avoid bonding technology to weigh metal connecting line wounded, and then improve the fine ratio of product of product.
Description
Technical field
The present invention relates to the preparation method and pressure sensor of a kind of pressure sensor, belong to micro code-lock field.
Background technology
1962, the first time such as Tufte diffusion silicon pressure drag bar and silicon fiml structure processed piezoresistive pressure sensor, open
Begin the research of piezoresistive pressure sensor.Beginning of the seventies late 1960s, silicon anisotropic etching technology, ion implanting
The appearance of technology and the big technology of anode linkage technology three brings huge change to pressure sensor, and they are improving pressure
Played the important and pivotal role in the performance of sensor.From the eighties in 20th century so far, the further development of micro-processing technology,
Such as anisotropic etch, photoetching, diffusing, doping, ion implanting, bonding and plated film technology so that the size of pressure sensor
Constantly reduce, sensitivity is improved, yield is high and excellent performance.Meanwhile, the development and application of new micro fabrication makes
The thickness for obtaining pressure sensor is precisely controlled.Jackson etc. and Kim and Wise have studied the electrochemistry of P-N junction respectively
Property, the difference (3000 of the rate of corrosion in corrosive liquid using P-type silicon and N-type silicon:1 in the corrosive liquid based on ethylenediamine) make
Standby silicon fiml.Kloeck etc. reports using electrochemistry self-stopping technology technology to improve the output characteristics of piezoresistive pressure sensor.
In the later stage eighties 20th century, NovaSensor starts with the technology and produces substantial amounts of pressure sensor.
So far, the manufacture of pressure sensor has evolved to a new stage, and more new technologies will be applied to
It is below most representational three kinds of prior arts in the production of pressure sensor.
Prior art one, Freescale Manifold Air Pressure (MAP) sensor is each to different using KOH etc.
Property the deep chamber of wet etch techniques etching form pressure sensitive film, finally overleaf deep chamber side switch combined glass glass or silicon chip form pressure
Chamber.But, using the wet etching solution such as KOH, K ionic soils are had, device performance is influenceed, pollute producing line；Other time control
Corrosion depth, makes presser sensor film thickness be difficult to precise control；Bonding technology can cause to weigh wounded to the positive metal level of disk；
Prior art two, NovaSensor pressure sensor corrode on substrate disk first pressure depth chamber,
Then in pressure depth chamber side switch unification piece N-type disk, by the N-type disk above attenuated polishing, pressure sensitive film is formed, then
The techniques such as diffusion are injected on pressure sensitive film and forms pressure drag, the structure such as metal connecting line and passivation layer finally subtracts to the back side
The technique such as thin opens pressure chamber from the back side.But, there are the following problems for the technology：Pressure depth chamber, pressure sensitive film are completed first
It is sealed in above, subsequent high temperature processes can deform pressure sensitive film, or even rupture, influence subsequent technique and yield rate；Pressure
, using the technique such as wafer bonding is thinning, technology difficulty is big, it is difficult to manufacture relatively thin and flat pressure sensitive film for sensitive membrane；
Prior art three, piezoresistive pressure sensor prepared by Bosch porous epitaxial silicons technology, its technique uses porous silicon
Epitaxial monocrystalline silicon forms annular seal space and pressure sensitive film.But, the related process technologies such as porous epitaxial silicon single silicon, including its
Its epitaxy single-crystal silicon technology on cavity forms annular seal space and presser sensor membrane technology, and technology difficulty is high, is hardly formed flat
Pressure sensitive film, and do not apply to the manufacture of gauge sensor.
The content of the invention
It is an object of the invention to provide a kind of preparation method of pressure sensor, high temperature is avoided by the preparation method
The influence of diffusion technique para-linkage technique, it is therefore prevented that the pressure sensitive film on high-temperature diffusion process destruction vacuum chamber, and avoid
Bonding technology is weighed wounded to metal connecting line.
To reach above-mentioned purpose, the present invention provides following technical scheme：A kind of preparation method of pressure sensor, including such as
Lower step：
S1：There is provided has the back side and positive wafer；
Pressure drag bar and heavily doped contact zone are formed in the front of the wafer；
Pressure depth chamber is formed by the back-etching of the wafer；
S2：Support chip is bonded at the back side of the wafer；
S3：Fairlead and metal connecting line are made in the front of the wafer, connection pressure drag bar forms Wheatstone bridge；
S4：Deposit to form passivation layer in the front of the wafer, open portion of the passivating layer to form metal pad region.
Further：The S1 specifically includes following steps：
S11：There is provided has the back side and positive wafer, and the thickness of pressure sensitive film is defined on the wafer；
S12：Ion implanting is used in the front of the wafer, pressure drag bar, heavily doped contact are made using high-temperature diffusion process
Area；
S13：Deposit to form protective layer in the front of wafer；
S14：Etch to form pressure depth chamber to form pressure sensitive film in the wafer rear.
Further：The wafer is SOI.
Further：The pressure depth chamber is formed by deep reactive ion etch technique.
Further：The S13 is specifically included：Protective layer is formed with oxide layer and nitration case in the front deposition of wafer.
Further：Include between the S13 and S14：The thinning back side of the wafer is polished to reduce wafer thickness.
Further：In the S3, also include：After the back side of wafer is bonded support chip, beaten on the support chip
Hole is forming and the through hole that is connected of pressure depth chamber.
Further：The support chip is silicon chip or sheet glass.
Further：In the S4, the passivation layer is formed by cvd silicon oxide and silicon nitride.
Present invention also offers a kind of pressure sensor, formed by the preparation method of above-mentioned pressure sensor.
The beneficial effects of the present invention are：Bonding technology is placed on high temperature and expanded by the preparation method of pressure sensor of the invention
After day labor skill, before metal connecting line technique, so as to avoid the influence of high-temperature diffusion process para-linkage technique, it is therefore prevented that high temperature
Pressure sensitive film on diffusion technique destruction vacuum chamber, and avoid bonding technology metal connecting line is weighed wounded, and then lifted
The fine ratio of product of product.
Described above is only the general introduction of technical solution of the present invention, in order to better understand technological means of the invention,
And can be practiced according to the content of specification, below with presently preferred embodiments of the present invention and coordinate accompanying drawing describe in detail as after.
Brief description of the drawings
Fig. 1 is the gauge sensor shown in one embodiment of the invention；
Fig. 2A to Fig. 2 I is the preparation method of the gauge sensor shown in Fig. 1；
Fig. 3 is the absolute pressure pressure sensor shown in another embodiment of the present invention.
Specific embodiment
With reference to the accompanying drawings and examples, specific embodiment of the invention is described in further detail.Hereinafter implement
Example is not limited to the scope of the present invention for illustrating the present invention.
Refer to Fig. 1 and combine Fig. 2A to Fig. 2 I, the gauge sensor 100 shown in a preferred embodiment of the present invention
Preparation method includes as follows：
Incorporated by reference to Fig. 2A, the first step：Wafer 1 is provided, the wafer 1 is SOI (the silicon on of (100) crystal face
insulator).The wafer 1 sequentially consists of lower floor's silicon 15, buried oxide 2 and the upper layer of silicon in buried oxide 2
3；The material of the buried oxide 2 is silica.By the thickness explication of upper layer of silicon 3 in buried oxide 2 for gauge is sensed
The thickness of the pressure sensitive film 4 of device 100；
Incorporated by reference to Fig. 2 B, second step：Zero layer alignment mark 5 is made in the front of the wafer 1, before subsequent technique
Layer alignment mark；
Incorporated by reference to Fig. 2 C, the 3rd step：Ion implanting is used in the front of wafer 1, pressure drag is made using high-temperature diffusion process
Bar 6, heavily doped contact zone 7；
Incorporated by reference to Fig. 2 D, the 4th step：Deposited oxide layer and nitration case on wafer 1, as follow-up attenuated polishing technique
Protective layer 8, likewise, the protective layer 8 again can be as the insulating barrier of gauge sensor 100；
Incorporated by reference to Fig. 2 E, the 5th step：By the thinning back side polishing of wafer 1 to reduce the thickness of wafer 1, and then reduce follow-up
The depth in etching pressure depth chamber, reduces the gross thickness of gauge sensor 100；
Incorporated by reference to Fig. 2 F, the 6th step：Etched by deep reactive ion etch technique (DRIE) at the back side of wafer 1 and form pressure
Power depth chamber 9, etching stopping forms pressure sensitive film 4 in buried oxide 2；Because etching oxidation silicon and silicon have choosing very high
Ratio is selected, so the thickness of pressure sensitive film 4 can be precisely controlled by deep reactive ion etch technique；
Incorporated by reference to Fig. 2 G, the 7th step：The back side of wafer 1 be bonded support chip 10, the material of support chip 10 can with but do not limit to
In silicon chip or sheet glass.In the present embodiment, after the back side of wafer 1 is bonded support chip 10, beaten on the support chip 10
Hole is forming the through hole 16 with the UNICOMs of pressure Shen Qiang 9；
Incorporated by reference to Fig. 2 H, the 8th step：Perforate to form fairlead 11 to make on the positive protective layer 8 of wafer 1, is drawing
Metal connecting line 12 is formed in string holes 11 and protective layer 8 and forms Wheatstone bridge to connect pressure drag bar 6, for measurement presser sensor
Film 4 changes the resistance variations for causing；
Incorporated by reference to Fig. 2 I, the 9th step：Wafer 1 front cvd silicon oxide and silicon nitride as passivation layer 13, opening portion
Divide passivation layer 13 to form the region of metal pad 14, for follow-up routing.
In other embodiments, the 3rd step can be placed on after the 6th step, but, the 6th step is put by the present embodiment
Before the 3rd step (i.e.：By high-temperature diffusion process be placed on pressure depth chamber 9 prepare before), can avoid causing due to fuel factor
Pressure sensitive film 4 is destroyed, and can improve finished product rate and technological feasibility.In addition, in the present embodiment, by by deeply instead
Answer ion etching etching pressure depth chamber 9 to be used in combination SOI and prepare pressure sensitive film, can be with precise control pressure sensitive film 4
Thickness, improve the uniformity of pressure sensor, it is to avoid metal ion pollution, and reduce the area of pressure sensor,
And, compared with prior art, can also avoid directly using the technologies such as attenuated polishing, can be with more precise control pressure sensitive film
4 thickness, is more easy to obtain flat pressure sensitive film 4.
Above-mentioned preparation technology can form gauge sensor 100, in other embodiments, if in the 7th step, when
After the back side bonding support chip 10 of wafer 1, do not punched on the support chip 10, then can form absolute pressure pressure sensor 200 (please
Referring to Fig. 3).
In sum：Following advantage can obtain by the preparation method of the preparation method of above-mentioned pressure sensor：
1st, by before bonding technology is moved into metal layer process, it is to avoid bonding technology is to metal level (metal connecting line 12)
Weigh wounded；
2nd, it is placed on after high-temperature diffusion process by by bonding technology, it is to avoid the shadow of high-temperature diffusion process para-linkage technique
Ring, it is therefore prevented that the pressure sensitive film 4 on high-temperature diffusion process breakdown pressure depth chamber 9；
3rd, by by high-temperature diffusion process be placed on pressure depth chamber 9 prepare before, can avoid causing pressure quick due to fuel factor
Sense film 4 is destroyed, and improves finished product rate and technological feasibility；
4th, pressure sensitive film 4 is prepared by the way that the deep chamber of deep reactive ion etch technique etching is used in combination into SOI, can be accurate
The thickness of control pressure sensitive membrane 4, improves the uniformity of pressure sensor, it is to avoid metal ion pollution, and reduce pressure
The area of force snesor, and, compared with prior art, can also avoid directly using the technologies such as attenuated polishing, can be more accurate
Control pressure sensitive membrane 4 thickness, be more easy to obtain flat pressure sensitive film 4.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope of this specification record is all considered to be.
Embodiment described above only expresses several embodiments of the invention, and its description is more specific and detailed, but simultaneously
Can not therefore be construed as limiting the scope of the patent.It should be pointed out that coming for one of ordinary skill in the art
Say, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of preparation method of pressure sensor, it is characterised in that the preparation method comprises the following steps：
S1：There is provided has the back side and positive wafer；
Pressure drag bar and heavily doped contact zone are formed in the front of the wafer；
Pressure depth chamber is formed by the back-etching of the wafer；
S2：Support chip is bonded at the back side of the wafer；
S3：Fairlead and metal connecting line are made in the front of the wafer, connection pressure drag bar forms Wheatstone bridge；
S4：Deposit to form passivation layer in the front of the wafer, open portion of the passivating layer to form metal pad region.
2. the preparation method of pressure sensor as claimed in claim 1, it is characterised in that the S1 specifically includes following step
Suddenly：
S11：There is provided has the back side and positive wafer, and the thickness of pressure sensitive film is defined on the wafer；
S12：Ion implanting is used in the front of the wafer, pressure drag bar, heavily doped contact zone are made using high-temperature diffusion process；
S13：Deposit to form protective layer in the front of wafer；
S14：Etch to form pressure depth chamber to form pressure sensitive film in the wafer rear.
3. the preparation method of pressure sensor as claimed in claim 1 or 2, it is characterised in that the wafer is SOI.
4. the preparation method of pressure sensor as claimed in claim 3, it is characterised in that reacted by deep in the pressure depth chamber
Ion etching is formed.
5. the preparation method of pressure sensor as claimed in claim 2, it is characterised in that the S13 is specifically included：In wafer
Front deposition protective layer is formed with oxide layer and nitration case.
6. the preparation method of pressure sensor as claimed in claim 2, it is characterised in that include between the S13 and S14：
The thinning back side of the wafer is polished to reduce wafer thickness.
7. the preparation method of pressure sensor as claimed in claim 1, it is characterised in that in the S3, also include：Work as crystalline substance
After round back side bonding support chip, punch to form the through hole being connected with pressure depth chamber on the support chip.
8. the preparation method of the pressure sensor as described in claim 1 or 7, it is characterised in that the support chip be silicon chip or
Person's sheet glass.
9. the preparation method of pressure sensor as claimed in claim 1, it is characterised in that in the S4, the passivation layer
Formed by cvd silicon oxide and silicon nitride.
10. a kind of pressure sensor, it is characterised in that the pressure sensor is by as any one in claim 1 to 9
The preparation method of the pressure sensor described in is formed.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107673306A (en) * | 2017-08-12 | 2018-02-09 | 北方电子研究院安徽有限公司 | A kind of preparation method of MEMS pressure sensor |
| CN108147361A (en) * | 2017-12-22 | 2018-06-12 | 中国科学院半导体研究所 | The preparation method of dense boron-doping silicon nano wire MEMS Piezoresistive Pressure Sensor |
| CN109342836A (en) * | 2018-10-24 | 2019-02-15 | 清华大学 | Production technology based on piezoelectricity pressure resistance type wideband high field intensity micro field sensor |
| CN110243501A (en) * | 2019-06-28 | 2019-09-17 | 华中科技大学 | The quantum pressure sensor and preparation method of a kind of diamond nitrogen vacancy colour center |
| CN110730905A (en) * | 2017-06-13 | 2020-01-24 | 株式会社电装 | Semiconductor device and method for manufacturing the same |
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| CN106153221A (en) * | 2016-08-26 | 2016-11-23 | 沈阳仪表科学研究院有限公司 | A kind of manufacture method of high-precision pressure sensor based on Si-Si bonding |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110730905A (en) * | 2017-06-13 | 2020-01-24 | 株式会社电装 | Semiconductor device and method for manufacturing the same |
| CN107673306A (en) * | 2017-08-12 | 2018-02-09 | 北方电子研究院安徽有限公司 | A kind of preparation method of MEMS pressure sensor |
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| CN108147361A (en) * | 2017-12-22 | 2018-06-12 | 中国科学院半导体研究所 | The preparation method of dense boron-doping silicon nano wire MEMS Piezoresistive Pressure Sensor |
| CN109342836A (en) * | 2018-10-24 | 2019-02-15 | 清华大学 | Production technology based on piezoelectricity pressure resistance type wideband high field intensity micro field sensor |
| CN109342836B (en) * | 2018-10-24 | 2021-03-26 | 清华大学 | Production process based on piezoelectric piezoresistive broadband high-field-intensity miniature electric field sensor |
| CN110243501A (en) * | 2019-06-28 | 2019-09-17 | 华中科技大学 | The quantum pressure sensor and preparation method of a kind of diamond nitrogen vacancy colour center |
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