CN110224067A - The hole mobile material and its preparation method and application of perovskite solar battery - Google Patents
The hole mobile material and its preparation method and application of perovskite solar battery Download PDFInfo
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- CN110224067A CN110224067A CN201910565227.3A CN201910565227A CN110224067A CN 110224067 A CN110224067 A CN 110224067A CN 201910565227 A CN201910565227 A CN 201910565227A CN 110224067 A CN110224067 A CN 110224067A
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- solar battery
- perovskite solar
- hole
- mobile material
- material composition
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- 239000000463 material Substances 0.000 title claims abstract description 66
- 238000002360 preparation method Methods 0.000 title abstract description 24
- 230000005540 biological transmission Effects 0.000 claims abstract description 41
- 239000000203 mixture Substances 0.000 claims abstract description 25
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000007788 liquid Substances 0.000 claims description 35
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 34
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 27
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 25
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 24
- 239000002243 precursor Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 17
- 230000005525 hole transport Effects 0.000 claims description 14
- 229910021645 metal ion Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 9
- PDZKZMQQDCHTNF-UHFFFAOYSA-M copper(1+);thiocyanate Chemical compound [Cu+].[S-]C#N PDZKZMQQDCHTNF-UHFFFAOYSA-M 0.000 claims description 8
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 8
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 8
- VMQMZMRVKUZKQL-UHFFFAOYSA-N Cu+ Chemical compound [Cu+] VMQMZMRVKUZKQL-UHFFFAOYSA-N 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052790 beryllium Inorganic materials 0.000 claims description 4
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052702 rhenium Inorganic materials 0.000 claims description 4
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052716 thallium Inorganic materials 0.000 claims description 4
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 229910021595 Copper(I) iodide Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims description 3
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 2
- ZMZDMBWJUHKJPS-UHFFFAOYSA-M Thiocyanate anion Chemical compound [S-]C#N ZMZDMBWJUHKJPS-UHFFFAOYSA-M 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 claims 1
- 150000004820 halides Chemical class 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 239000011799 hole material Substances 0.000 description 76
- 239000011521 glass Substances 0.000 description 46
- 238000004528 spin coating Methods 0.000 description 37
- 230000031700 light absorption Effects 0.000 description 29
- 239000010409 thin film Substances 0.000 description 20
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 19
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- 239000003153 chemical reaction reagent Substances 0.000 description 18
- 235000019441 ethanol Nutrition 0.000 description 17
- 238000010438 heat treatment Methods 0.000 description 11
- 230000027756 respiratory electron transport chain Effects 0.000 description 11
- -1 yttrium ion Chemical class 0.000 description 11
- 238000005507 spraying Methods 0.000 description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 9
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 9
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 9
- 238000005520 cutting process Methods 0.000 description 9
- 239000008367 deionised water Substances 0.000 description 9
- 229910021641 deionized water Inorganic materials 0.000 description 9
- 238000004851 dishwashing Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 230000008020 evaporation Effects 0.000 description 9
- 238000001704 evaporation Methods 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 239000007921 spray Substances 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 238000007740 vapor deposition Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- PBKYCFJFZMEFRS-UHFFFAOYSA-L beryllium bromide Chemical compound [Be+2].[Br-].[Br-] PBKYCFJFZMEFRS-UHFFFAOYSA-L 0.000 description 3
- 229910001621 beryllium bromide Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 241000416536 Euproctis pseudoconspersa Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000026030 halogenation Effects 0.000 description 1
- 238000005658 halogenation reaction Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229930002839 ionone Natural products 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N phosphoric acid Substances OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention provides a kind of hole mobile materials and its preparation method and application of perovskite solar battery.It include inorganic hole transporter and yttrium in the hole mobile material composition, the molar ratio of metallic element and yttrium in inorganic hole transporter is N:1 (20≤N≤100000).The hole transmission layer of perovskite solar battery of the invention is prepared by the hole mobile material composition of above-mentioned perovskite solar battery.The stability of the perovskite solar battery is good and high conversion efficiency.
Description
Technical field
The present invention relates to a kind of materials of the hole transmission layer of perovskite solar battery, belong to solar cell material skill
Art field.
Background technique
Solar battery can directly convert light energy into electric energy.The composition of the major product of photovoltaic power generation currently on the market
It is silicon crystal or cadmium telluride, the compound crystal of GaAs etc.But preparing for these above-mentioned photovoltaic materials is very complicated, and
Energy consumption is huge, limits the development of photovoltaic industry to a certain extent.As the representative of third generation solar cell, perovskite is too
The transfer efficiency of positive energy battery is in a few years, and by initial 3.8% to being more than at present 23%, this allows photovoltaic industry to see
Develop the great potential of perovskite solar battery.
In order to further enhance the efficiency of perovskite solar battery, the light-absorption layer to perovskite solar battery is needed,
Carrier blocking layers optimize.Although inorganic hole transporter compares Spiro-OMeTAD hole mobile material, preparation
The efficiency of perovskite solar battery want low, but its stability, price are better than the organic holes such as Spiro-OMeTAD biography
Defeated material.Therefore, realization prepares high efficiency high stability perovskite solar battery with inorganic material hole transmission layer, to it
Industrialization is significant.
But the perovskite battery open circuit voltage and fill factor of traditional inorganic hole-transporting layer material preparation are not high enough,
It is not enough matched this is mainly due to itself band structure with perovskite band structure and carrier transport efficiency is too low causes
's.
Summary of the invention
In order to solve the above-mentioned technical problem, the purpose of the present invention is to provide a kind of open-circuit voltage and transformation efficiency are higher
Perovskite solar battery.
In order to achieve the above technical purposes, present invention firstly provides a kind of hole transport materials of perovskite solar battery
Feed composition includes inorganic hole transporter and yttrium in the hole mobile material composition, wherein inorganic sky
The molar ratio of metallic element and yttrium in hole transport materials is N:1 (20≤N≤100000).
The hole mobile material composition of perovskite solar battery of the invention passes through in inorganic hole transporter
The yttrium ion for introducing special ratios, makes the metal in yttrium ionic compartmentation inorganic hole transporter
Ion is filled into the lattice of inorganic hole transporter, so that the concentration in the hole in inorganic hole transporter is promoted.
Yttrium ion in inorganic hole material can not only be such that the top of valence band of inorganic hole transporter declines, and make hole
The energy band of transmission material and the energy band matching of perovskite be more preferable, can also improve perovskite thin film face on the hole transport layer
Covering.Photoelectric conversion efficiency promotion based on perovskite solar battery prepared by hole mobile material composition of the invention
10% or more.
In a specific embodiment of the invention, the yttrium that uses for beryllium, titanium, zirconium, hafnium, vanadium, niobium, tantalum,
The combination of one or more of molybdenum, tungsten, gallium, indium, thallium, germanium, rhenium, tin, arsenic.
In a specific embodiment of the invention, the yttrium of use come from containing beryllium, titanium, zirconium, hafnium, vanadium,
Niobium, tantalum, molybdenum, tungsten, gallium, indium, thallium, germanium, rhenium, tin, arsenic metal ion one or more of compound combination.
In a specific embodiment of the invention, the valence state of the rare metal ion used for monovalence, divalent, trivalent,
The combination of one or more of tetravalence.
In a specific embodiment of the invention, the compound of the rare metal used can be the halogenation of rare metal
Object, sulfide, nitride, oxide, phosphide (anion centered on P elements, including but not limited to phosphoric acid compound),
The combination of one or more of rhodanide, acetate.
In a specific embodiment of the invention, the inorganic hole transporter used is nickel oxide, CuI, Cu2O、
The combination of one or more of CuSCN.
Perovskite is prepared the present invention also provides the hole mobile material composition using above-mentioned perovskite solar battery
The method of the hole transmission layer precursor liquid of solar battery, method includes the following steps:
The solution of inorganic hole transporter is mixed with the solution containing rare metal ion, is stirred at 55 DEG C -85 DEG C
12 hours or more, obtain the hole transmission layer precursor liquid of perovskite solar battery.
Wherein, as long as the concentration ratio of the solution of inorganic hole transporter and the solution containing rare metal ion meets gold
The molar ratio for belonging to ion and rare metal ion is N:1 (20≤N≤100000).
In a specific embodiment of the invention, the solvent that the solution of inorganic hole transporter uses is acetonitrile, second
The combination of one or more of alcohol, N,N-dimethylformamide, dimethyl sulfoxide.
Specifically, the preparation method of the hole mobile material precursor liquid of perovskite solar battery of the invention, including with
Lower step:
Prepare the solution of inorganic hole transporter, wherein inorganic hole transporter can using nickel oxide, CuI,
Cu2O, the combination of one or more of CuSCN；Preparing solvent that the solution of inorganic hole transporter uses can be for
One of acetonitrile, ethyl alcohol, N,N-dimethylformamide, dimethyl sulfoxide or or two or more combination；
Prepare the solution containing rare metal ion；
The solution containing rare metal ion is added in the solution of inorganic hole transporter, is stirred at 55 DEG C -85 DEG C
12 hours or more, obtain the hole mobile material composition of perovskite solar battery, wherein the gold of inorganic hole transporter
The molar ratio for belonging to element and yttrium is N:1 (20≤N≤100000).
The hole mobile material composition of perovskite solar battery of the invention, is adulterated in inorganic hole transporter
Rare metal.Rare metal ion plays the role of replacing inorganic hole element in inorganic hole transporter or is filled into nothing
In the interstitial void of machine hole mobile material.The hole concentration in inorganic hole transporter can be improved in rare metal ion,
Improve contact of the inorganic hole transporter surface with perovskite material, to improve the energy level of hole mobile material and perovskite
Matching degree and perovskite material make the perovskite thin film of preparation in hole transport in the adhesion on inorganic hole transporter surface
Coverage rate on layer is improved.
The present invention also provides a kind of perovskite solar battery, the hole transmission layer of the perovskite solar battery is logical
Cross what the precursor liquid of the hole transmission layer of perovskite solar battery of the invention was prepared.
It, can be by the hole transmission layer of perovskite solar battery of the invention in a specific embodiment of the invention
Precursor liquid passes through the combination of one or more of spin-coating method, slit coating method, knife coating, spray coating method and print process
Mode, preparation form the hole transmission layer of perovskite solar battery.
In a specific embodiment of the invention, hole transmission layer with a thickness of 10nm-1000nm.
In a specific embodiment of the invention, the structure of perovskite solar battery includes conductive base from the bottom to top
Bottom, hole transmission layer, perovskite light-absorption layer, electron transfer layer, to electrode etc., wherein hole transmission layer is through the invention
What the hole mobile material composition of perovskite solar battery was prepared.
Specifically, the conductive substrates of the perovskite solar battery include the conductive materials such as FTO or ITO.
Specifically, the molecular formula of the extinction layer material of the perovskite solar battery is ABX3, wherein A includes CH3NH3+、
NH2CHNH2+、CS+、Rb+Equal cations, B includes Pb2+、Sn2+、Ge2+、Sr2+、Cu2+、Bi3+、Sb3+Equal cations, X includes I-、
Cl-Or Br-Equal halide anions.
Specifically, the composition of the electron transfer layer of the perovskite solar battery is TiO2、ZnO、SnO2Etc. inorganic electronics pass
The Organic Electron Transport Materials such as defeated material or PCBM, can also be in above-mentioned electron transport material at least two or more mixing.
Specifically, which is one or both of Al, Ag, Au, Mo, Cr, C to the material of electrode
Above combination.
The hole mobile material composition of perovskite solar battery of the invention, by into inorganic hole transporter
Rare metal is introduced, the band structure of hole transmission layer is effectively improved, reaches and the matched effect of perovskite material energy band.Together
When, the concentration of carrier is also increased dramatically in hole transmission layer.Based on the hole transmission layer that this is formed, make the perovskite sun
The photoelectric conversion efficiency of energy battery improves 10% or more.
Detailed description of the invention
Fig. 1 is the structure chart of the perovskite solar battery in the embodiment of the present invention 1.
Specific embodiment
In order to which technical characteristic of the invention, purpose and beneficial effect are more clearly understood, now to skill of the invention
Art scheme carries out described further below, but should not be understood as that limiting the scope of the invention.
Comparative example 1
This comparative example provides a kind of perovskite solar battery, through the following steps that be prepared:
(1) glass cleaning: adding dilute hydrochloric acid to perform etching in FTO glass with zinc powder, by the glass-cutting etched at 2.5 ×
The small glass of 2.5cm.Dish washing liquid successively used to small glass, deionized water, ethyl alcohol, acetone each ultrasonic 20 minutes.With being dried with nitrogen
It is handled 30 minutes in UV ozone machine afterwards.
(2) prepared by hole transmission layer: preparing oxidation nickel solution.The concentration of solution is 10mg/mL.By the glass in step (1)
Glass heating, filters the hole transport layer material solution of outfit, with the above-mentioned filtered solution of spray gun spraying.
(3) prepare perovskite light-absorption layer: the material of light-absorption layer is MAPbI3.The sky prepared by spin-coating method in step (2)
Perovskite thin film light-absorption layer is prepared in the transport layer of cave.MAI/PbI2Concentration for 1:1 solution is PbI2It is for 600mg/mL, MAI
198mg/mL.The brown reagent bottle for taking 1 clean 20mL, measures the PbI of 6g2Reagent bottle is added sequentially to the MAI of 1.9g
In, then add the DMF of 10mL.
(4) prepared by electron transfer layer: successively spin coating PCBM, BCP on prepared perovskite thin film.PCBM dosage is every
The battery of block 2.5 × 2.5 heats 10 minutes in 75 DEG C of heating plate after spin coating is good at 500 microlitres.The dosage of BCP is micro- 800
It rises, is heated on hot plate after spin coating is good 10 minutes.
(5) it prepared by electrode: vacuum chamber is evacuated to 2.0 × 10-4Pa is deposited 5 minutes in advance again.Before the rate of Ag evaporation
100nm0.5A/s, 100-1000nm can be 6A/S or more.
Embodiment 1
A kind of perovskite solar battery is present embodiments provided, is by following with structure as shown in Figure 1
What step was prepared:
(1) glass cleaning: adding dilute hydrochloric acid to perform etching in FTO glass with zinc powder, by the glass-cutting etched at 2.5 ×
The small glass of 2.5cm.Dish washing liquid successively used to small glass, deionized water, ethyl alcohol, acetone each ultrasonic 20 minutes.With being dried with nitrogen
It is handled 30 minutes in UV ozone machine afterwards.
(2) hole transmission layer prepares precursor liquid preparation: preparing the inorganic hole transmission material containing yttrium ion
Expect solution.The inidum chloride that molar ratio is 0.5% mix with nickel oxide as solute, then thereto the acetonitrile of addition 35mL with
The ethyl alcohol of 5mL, rotates 12h on 65 DEG C of turntable, if there are also a small amount of solutes in solution, can be added in right amount 1-2mL's
DMSO, the oxidation nickel concentration of preparation are 10mg/mL.
(3) prepared by hole transmission layer: the glass in step (1) being heated, the hole transport layer material forerunner of outfit is filtered
Liquid, with the filtered precursor liquid of spray gun spraying.
(4) prepare perovskite light-absorption layer: the material of light-absorption layer is MAPbI3.The sky prepared by spin-coating method in step (3)
Perovskite thin film light-absorption layer is prepared in the transport layer of cave.MAI/PbI2Concentration for 1:1 solution is PbI2It is for 600mg/mL, MAI
198mg/mL.The brown reagent bottle for taking 1 clean 20mL, measures the PbI of 6g2Reagent bottle is added sequentially to the MAI of 1.9g
In, then add the DMF of 10mL.
(5) prepared by electron transfer layer: successively spin coating PCBM, BCP on prepared perovskite thin film.PCBM dosage is every
The battery of block 2.5 × 2.5 heats 10 minutes in 75 DEG C of heating plate after spin coating is good at 500 microlitres.The dosage of BCP is micro- 800
It rises, is heated on hot plate after spin coating is good 10 minutes.
(6) preparation is to electrode: vacuum chamber is evacuated to 2.1 × 10-4Pa, then pre- vapor deposition 5 minutes.Before the rate of Ag evaporation
100nm0.5A/s, 100-1000nm can be 6A/S or more.
Embodiment 2
A kind of perovskite solar battery is present embodiments provided, through the following steps that be prepared:
(1) glass cleaning: adding dilute hydrochloric acid to perform etching in FTO glass with zinc powder, by the glass-cutting etched at 2.5 ×
The small glass of 2.5cm.Dish washing liquid successively used to small glass, deionized water, ethyl alcohol, acetone each ultrasonic 20 minutes.With being dried with nitrogen
It is handled 30 minutes in UV ozone machine afterwards.
(2) hole transmission layer prepares precursor liquid preparation: preparing the inorganic hole transmission material containing yttrium ion
Expect solution.The beryllium bromide that molar ratio is 0.5% mix with nickel oxide as solute, then thereto the acetonitrile of addition 35mL with
The ethyl alcohol of 5mL, rotates 5h on 65 DEG C of turntables, if there are also a small amount of solutes in solution, can be added in right amount 1-2mL's
DMSO, the oxidation nickel concentration of preparation are 10mg/mL.
(3) prepared by hole transmission layer: the glass in step (1) being heated, the hole transport layer material forerunner of outfit is filtered
Liquid, with the above-mentioned filtered precursor liquid of spray gun spraying.
(4) perovskite light-absorption layer is prepared.The material of light-absorption layer is MAPbI3.The sky prepared by spin-coating method in step (3)
Perovskite thin film light-absorption layer is prepared in the transport layer of cave.MAI/PbI2Concentration for 1:1 solution is PbI2It is for 600mg/mL, MAI
198mg/mL.The brown reagent bottle for taking 1 clean 20mL, measures the PbI of 6g2Reagent bottle is added sequentially to the MAI of 1.9g
In, then add the DMF of 10mL.
(5) prepared by electron transfer layer: successively spin coating PCBM, BCP on prepared perovskite thin film.PCBM dosage is every
The battery of block 2.5 × 2.5 heats 10 minutes in 75 DEG C of heating plate after spin coating is good at 500 microlitres.The dosage of BCP is micro- 800
It rises, is heated on hot plate after spin coating is good 10 minutes.
(6) preparation is to electrode: vacuum chamber is evacuated to 2.1 × 10-4Pa, then pre- vapor deposition 5 minutes.Before the rate of Ag evaporation
100nm0.5A/s, 100-1000nm can be 6A/S or more.
Comparative example 2
This comparative example provides a kind of perovskite solar battery, through the following steps that be prepared:
(1) glass cleaning: adding dilute hydrochloric acid to perform etching in FTO glass with zinc powder, by the glass-cutting etched at 2.5 ×
The small glass of 2.5cm.Dish washing liquid successively used to small glass, deionized water, ethyl alcohol, acetone each ultrasonic 20 minutes.With being dried with nitrogen
It is handled 30 minutes in UV ozone machine afterwards.
(2) prepared by hole transmission layer: preparing CuI solution.The concentration of solution is 30mg/mL.Glass in step (1) is added
Heat filters the hole transport layer material solution of outfit, with the above-mentioned filtered solution of spray gun spraying.
(3) prepare perovskite light-absorption layer: the material of light-absorption layer is MAPbI3.The sky prepared by spin-coating method in step (2)
Perovskite thin film light-absorption layer is prepared in the transport layer of cave.MAI/PbI2Concentration for 1:1 solution is PbI2It is for 600mg/mL, MAI
198mg/mL.The brown reagent bottle for taking 1 clean 20mL, measures the PbI of 6g2Reagent bottle is added sequentially to the MAI of 1.9g
In, then add the DMF of 10mL.
(4) electron transfer layer is prepared: successively spin coating PCBM, BCP on prepared perovskite thin film.PCBM dosage is every
The battery of block 2.5 × 2.5 heats 10 minutes in 75 DEG C of heating plate after spin coating is good at 500 microlitres.The dosage of BCP is micro- 800
It rises, is heated on hot plate after spin coating is good 10 minutes.
(5) preparation is to electrode: vacuum chamber is evacuated to 2.1 × 10-4Pa, then pre- vapor deposition 5 minutes.Before the rate of Ag evaporation
100nm0.5A/s, 100-1000nm can be 6A/S or more.
Embodiment 3
A kind of perovskite solar battery is present embodiments provided, through the following steps that be prepared:
(1) glass cleaning: adding dilute hydrochloric acid to perform etching in FTO glass with zinc powder, by the glass-cutting etched at 2.5 ×
The small glass of 2.5cm.Dish washing liquid successively used to small glass, deionized water, ethyl alcohol, acetone each ultrasonic 20 minutes.With being dried with nitrogen
It is handled 30 minutes in UV ozone machine afterwards.
(2) hole transmission layer prepares precursor liquid preparation: preparing the inorganic hole transmission material containing yttrium ion
Expect solution.The inidum chloride that molar ratio is 0.3% mix with CuI and is used as solute, then the acetonitrile of addition 35mL and 5mL thereto
Ethyl alcohol, then rotates 5h again on turntable, if there are also a small amount of solutes in solution, the DMSO of 1-2mL can be added in right amount.
(3) prepared by hole transmission layer: the glass in step (1) being heated, the hole transport layer material forerunner of outfit is filtered
Liquid, with the above-mentioned filtered precursor liquid of spray gun spraying.
(4) prepare perovskite light-absorption layer: the material of light-absorption layer is MAPbI3.The sky prepared by spin-coating method in step (3)
Perovskite thin film light-absorption layer is prepared in the transport layer of cave.MAI/PbI2Concentration for 1:1 solution is PbI2It is for 600mg/mL, MAI
198mg/mL.The brown reagent bottle for taking 1 clean 20mL, measures the PbI of 6g2Reagent bottle is added sequentially to the MAI of 1.9g
In, then add the DMF of 10mL.
(5) electron transfer layer is prepared: successively spin coating PCBM, BCP on prepared perovskite thin film.PCBM dosage is every
The battery of block 2.5 × 2.5 heats 10 minutes in 75 degrees Celsius of heating plate after spin coating is good at 500 microlitres.The dosage of BCP exists
It 800 microlitres, is heated on hot plate after spin coating is good 10 minutes.
(6) preparation is to electrode: vacuum chamber is evacuated to 2.1 × 10-4Pa, then pre- vapor deposition 5 minutes.Before the rate of Ag evaporation
100nm0.5A/s, 100-1000nm can be 6A/S or more.
Embodiment 4
A kind of perovskite solar battery is present embodiments provided, through the following steps that be prepared:
(1) glass cleaning: adding dilute hydrochloric acid to perform etching in FTO glass with zinc powder, by the glass-cutting etched at 2.5 ×
The small glass of 2.5cm.Dish washing liquid successively used to small glass, deionized water, ethyl alcohol, acetone each ultrasonic 20 minutes.With being dried with nitrogen
It is handled 30 minutes in UV ozone machine afterwards.
(2) hole transmission layer prepares precursor liquid preparation: preparing the inorganic hole transmission material containing yttrium ion
Expect solution.The beryllium bromide that molar ratio is 0.3% mix with CuI and is used as solute, then the acetonitrile of addition 35mL and 5mL thereto
Ethyl alcohol, then rotates 5h again on turntable, if there are also a small amount of solutes in solution, the DMSO of 1-2mL can be added in right amount.
(3) glass in step (1) is heated, the hole transport layer material precursor liquid of outfit is filtered, on spray gun spraying
State filtered precursor liquid.
(4) prepare perovskite light-absorption layer: the material of light-absorption layer is MAPbI3.The sky prepared by spin-coating method in step (3)
Perovskite thin film light-absorption layer is prepared in the transport layer of cave.MAI/PbI2Concentration for 1:1 solution is PbI2It is for 600mg/mL, MAI
198mg/mL.The brown reagent bottle for taking 1 clean 20mL, measures the PbI of 6g2Reagent bottle is added sequentially to the MAI of 1.9g
In, then add the DMF of 10mL.
(5) electron transfer layer is prepared: successively spin coating PCBM, BCP on prepared perovskite thin film.PCBM dosage is every
The battery of block 2.5 × 2.5 heats 10 minutes in 75 DEG C of heating plate after spin coating is good at 500 microlitres.The dosage of BCP is micro- 800
It rises, is heated on hot plate after spin coating is good 10 minutes.
(6) preparation is to electrode: vacuum chamber is evacuated to 2.1 × 10-4Pa, then pre- vapor deposition 5 minutes.Before the rate of Ag evaporation
100nm0.5A/s, 100-1000nm can be 6A/S or more.
Comparative example 3
This comparative example provides a kind of perovskite solar battery, through the following steps that be prepared:
(1) glass cleaning: adding dilute hydrochloric acid to perform etching in FTO glass with zinc powder, by the glass-cutting etched at 2.5 ×
The small glass of 2.5cm.Dish washing liquid successively used to small glass, deionized water, ethyl alcohol, acetone each ultrasonic 20 minutes.With being dried with nitrogen
It is handled 30 minutes in UV ozone machine afterwards.
(2) prepared by hole transmission layer: preparing CuSCN solution.The concentration of solution is 20mg/mL.By the glass in step (1)
Heating, filters the hole transport layer material solution of outfit, with the above-mentioned filtered solution of spray gun spraying.
(3) prepare perovskite light-absorption layer: the material of light-absorption layer is MAPbI3.The sky prepared by spin-coating method in step (2)
Perovskite thin film light-absorption layer is prepared in the transport layer of cave.MAI/PbI2Concentration for 1:1 solution is PbI2It is for 600mg/mL, MAI
198mg/mL.The brown reagent bottle for taking 1 clean 20mL, measures the PbI of 6g2Reagent bottle is added sequentially to the MAI of 1.9g
In, then add the DMF of 10mL.
(4) electron transfer layer is prepared: successively spin coating PCBM, BCP on prepared perovskite thin film.PCBM dosage is every
The battery of block 2.5 × 2.5 heats 10 minutes in 75 DEG C of heating plate after spin coating is good at 500 microlitres.The dosage of BCP is micro- 800
It rises, is heated on hot plate after spin coating is good 10 minutes.
(5) preparation is to electrode: vacuum chamber is evacuated to 2.1 × 10-4Pa, then pre- vapor deposition 5 minutes.Before the rate of Ag evaporation
100nm0.5A/s, 100-1000nm can be 6A/S or more.
Embodiment 5
A kind of perovskite solar battery is present embodiments provided, through the following steps that be prepared:
(1) glass cleaning: adding dilute hydrochloric acid to perform etching in FTO glass with zinc powder, by the glass-cutting etched at 2.5 ×
The small glass of 2.5cm.Dish washing liquid successively used to small glass, deionized water, ethyl alcohol, acetone each ultrasonic 20 minutes.With being dried with nitrogen
It is handled 30 minutes in UV ozone machine afterwards.
(2) hole transmission layer prepares precursor liquid preparation: preparing the inorganic hole transmission material containing yttrium ion
Expect solution.The beryllium bromide that molar ratio is 0.2% is mixed with CuSCN as solute, then the acetonitrile and 5mL of 35mL are added thereto
Ethyl alcohol, then rotate 5h on turntable again, if there are also a small amount of solutes in solution, the DMSO of 1-2mL can be added in right amount.
(3) prepared by hole transmission layer: the glass in step (1) being heated, the hole transport layer material forerunner of outfit is filtered
Liquid, with the above-mentioned filtered precursor liquid of spray gun spraying.
(4) prepare perovskite light-absorption layer: the material of light-absorption layer is MAPbI3.The sky prepared by spin-coating method in step (3)
Perovskite thin film light-absorption layer is prepared in the transport layer of cave.MAI/PbI2Concentration for 1:1 solution is PbI2It is for 600mg/mL, MAI
198mg/mL.The brown reagent bottle for taking 1 clean 20mL, measures the PbI of 6g2Reagent bottle is added sequentially to the MAI of 1.9g
In, then add 10mlDMF.
(5) electron transfer layer is prepared: successively spin coating PCBM, BCP on prepared perovskite thin film.PCBM dosage is every
The battery of block 2.5 × 2.5 heats 10 minutes in 75 DEG C of heating plate after spin coating is good at 500 microlitres.The dosage of BCP is micro- 800
It rises, is heated on hot plate after spin coating is good 10 minutes.
(6) preparation is to electrode: vacuum chamber is evacuated to 2.1 × 10-4Pa, then pre- vapor deposition 5 minutes.Before the rate of Ag evaporation
100nm0.5A/s, 100-1000nm can be 6A/S or more.
Embodiment 6
A kind of perovskite solar battery is present embodiments provided, through the following steps that be prepared:
(1) glass cleaning: adding dilute hydrochloric acid to perform etching in FTO glass with zinc powder, by the glass-cutting etched at 2.5 ×
The small glass of 2.5cm.Dish washing liquid successively used to small glass, deionized water, ethyl alcohol, acetone each ultrasonic 20 minutes.With being dried with nitrogen
It is handled 30 minutes in UV ozone machine afterwards.
(2) hole transmission layer prepares precursor liquid preparation: preparing the inorganic hole transmission material containing yttrium ion
Expect solution.The tungsten sulfide that molar ratio is 0.2% is mixed with CuSCN as solute, then the acetonitrile and 5mL of 35mL are added thereto
Ethyl alcohol, then rotate 5h on turntable again, if there are also a small amount of solutes in solution, the DMSO of 1-2mL can be added in right amount.
(3) prepared by hole transmission layer: the glass in step (1) being heated, the hole transport layer material forerunner of outfit is filtered
Liquid, with the above-mentioned filtered precursor liquid of spray gun spraying.
(4) prepare perovskite light-absorption layer: the material of light-absorption layer is MAPbI3.The sky prepared by spin-coating method in step (3)
Perovskite thin film light-absorption layer is prepared in the transport layer of cave.MAI/PbI2Concentration for 1:1 solution is PbI2It is for 600mg/mL, MAI
198mg/mL.The brown reagent bottle for taking 1 clean 20mL, measures the PbI of 6g2Reagent bottle is added sequentially to the MAI of 1.9g
In, then add the DMF of 10mL.
(5) electron transfer layer is prepared: successively spin coating PCBM, BCP on prepared perovskite thin film.PCBM dosage is every
The battery of block 2.5 × 2.5 heats 10 minutes in 75 DEG C of heating plate after spin coating is good at 500 microlitres.The dosage of BCP is micro- 800
It rises, is heated on hot plate after spin coating is good 10 minutes.
(6) preparation is to electrode: vacuum chamber is evacuated to 2.1 × 10-4Pa, then pre- vapor deposition 5 minutes.Before the rate of Ag evaporation
100nm0.5A/s, 100-1000nm can be 6A/S or more.
The efficiency of solar battery prepared by above-mentioned comparative example and embodiment is compared.The results are shown in Table 1.
Table 1
It can be seen that from the data of table 1 by adulterating a certain proportion of rare metal member in nickel oxide, CuI and CuSCN
Element, the short circuit current and fill factor and transfer efficiency of perovskite solar battery have obvious very high, this is attributed to rare gold
After belonging to element doping, the hole concentration raising in nickel oxide and CuI and CuSCN is very big, and carrier mobility is basically unchanged, and is also changed
It has been apt to the pattern on nickel oxide layer surface, has kept perovskite crystallization above it and film forming characteristics more preferable.
Above embodiments show that the present invention is to prepare high efficiency, stability good perovskite solar battery has gone out one kind
Feasible thinking.
Claims (10)
1. a kind of hole mobile material composition of perovskite solar battery, wherein wrapped in the hole mobile material composition
Include inorganic hole transporter and yttrium, wherein metallic element and rare metal in inorganic hole transporter
The molar ratio of element is N:1 (20≤N≤100000).
2. the hole mobile material composition of perovskite solar battery according to claim 1, wherein the rare gold
Category element is the group of one or more of beryllium, titanium, zirconium, hafnium, vanadium, niobium, tantalum, molybdenum, tungsten, gallium, indium, thallium, germanium, rhenium, tin, arsenic
It closes.
3. the hole mobile material composition of perovskite solar battery according to claim 2, wherein the rare gold
Belong to element from containing beryllium, titanium, zirconium, hafnium, vanadium, niobium, tantalum, molybdenum, tungsten, gallium, indium, thallium, germanium, rhenium, tin, arsenic metal ion compound
One or more of combination.
4. the hole mobile material composition of perovskite solar battery according to claim 3, wherein rare metal from
The valence state of son is the combination of one or more of monovalence, divalent, trivalent, tetravalence.
5. the hole mobile material composition of perovskite solar battery according to claim 3 or 4, wherein describedization
Close object be one of halide of rare metal, sulfide, nitride, oxide, phosphide, rhodanide, acetate or
Two or more combinations.
6. the hole mobile material composition of perovskite solar battery according to claim 1, wherein the inorganic sky
Hole transport materials are nickel oxide, CuI, Cu2O, the combination of one or more of CuSCN.
7. preparing calcium titanium using the hole mobile material composition of perovskite solar battery described in any one of claims 1-6
The method of the hole transmission layer precursor liquid of mine solar battery, wherein method includes the following steps:
The solution of inorganic hole transporter is mixed with the solution containing rare metal ion, it is small that 12 are stirred at 55 DEG C -85 DEG C
When more than, obtain the hole transmission layer precursor liquid of the perovskite solar battery.
8. according to the method described in claim 7, wherein, the solvent that the solution of inorganic hole transporter uses is acetonitrile, second
The combination of one or more of alcohol, N,N-dimethylformamide, dimethyl sulfoxide.
9. a kind of perovskite solar battery, wherein the hole transmission layer of the perovskite solar battery is as described in claim 7
The hole transmission layer precursor liquid of perovskite solar battery be prepared.
10. perovskite solar battery according to claim 9, wherein the hole transmission layer with a thickness of 10nm-
1000nm。
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Address after: No. 22 Changshan Avenue, Jiangyin City, Wuxi City, Jiangsu Province, 214437 Patentee after: Liyuan New Energy Technology (Wuxi) Co.,Ltd. Country or region after: China Address before: 201400 1, 2204, Fengpu Avenue, Fengxian District, Shanghai, 2204 Patentee before: SHANGHAI LIYUAN NEW ENERGY TECHNOLOGY Co.,Ltd. Country or region before: China |
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