CN110221526A - 一种基于lcos技术的曝光机 - Google Patents
一种基于lcos技术的曝光机 Download PDFInfo
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- CN110221526A CN110221526A CN201810170660.2A CN201810170660A CN110221526A CN 110221526 A CN110221526 A CN 110221526A CN 201810170660 A CN201810170660 A CN 201810170660A CN 110221526 A CN110221526 A CN 110221526A
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- 238000005516 engineering process Methods 0.000 title claims abstract description 14
- 230000010287 polarization Effects 0.000 claims abstract description 26
- 230000003287 optical effect Effects 0.000 claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000004973 liquid crystal related substance Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 230000003321 amplification Effects 0.000 claims description 2
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- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000011161 development Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
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- 230000000149 penetrating effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
本发明公开了一种基于LCOS技术的曝光机,包括光源、偏振分光元件PBS、LCOS、投影系统和待曝光工件。其中光源发出的光中p型偏振光通过偏振分光元件PBS后入射到高分辨率的LCOS上,LCOS反射的光为s型偏振光,经偏振分光元件PBS反射后进入投影系统,通过投影系统投射到待曝光工件,使待曝光工件形成曝光。此曝光机并不需要掩膜形成图案,可减少工艺流程及生产成本。由于LCOS具有高分辨率特点,因而可以实现高分辨率高精度的曝光,此曝光机对于推动我国电子产品行业的发展具有重要意义。
Description
技术领域
本发明涉及一种曝光机,尤其涉及一种基于LCOS技术的曝光机。
背景技术
印制电路板(PCB)是连接、组装集成电路电子元件的基板,几乎所有的电子设备都离不开印制电路板。在大型电子产品研究过程中,印制电路板的设计和制作直接影响到整个产品的质量和成本。在PCB及微电子器件的制造设备中,曝光机的研制至关重要。
随着电子产业的快速发展,尤其是手机、平板电视、摄像机等家电领域产品以及微型机器人、微型飞行器、微型鱼雷等微型武器产品,都表明高精度高分辨率曝光机有着广泛的应用前景和巨大的应用潜力,但到目前为止,现有的曝光机还不能满足高分辨率的需求。
同时传统曝光机为掩膜式曝光在曝光特定图形前需制作掩膜板,通过掩膜板将特定的图案透射到工作面上形成具有图案的曝光。而本发明所述曝光机并不需要掩膜形成图案,可减少工艺流程及生产成本。而相对于数字微镜器件(Digital Micromirror Device,简称DMD)无掩膜曝光路线,DMD芯片紫外系列芯片目前仅能支持1920 x 1080分辨率,本发明所述曝光机目前可实现4096 x 2400分辨率即实现超过现有无掩膜曝光像素数量的5倍,并在未来可进一步快速提高分辨率。
发明内容
本发明要解决的问题是:
现有曝光机还不能满足高分辨率的需求问题。
而本发明采用一种基于LCOS技术的曝光机,LCOS即Liquid Crystal on Silicon硅基液晶,是一种反射元件,使入射p型偏振光转变成s型偏振光,通过控制LCOS上每个像素的开关形成所需图形,LCOS反射后的光线作为曝光图案的发生源, LCOS具有大于等于1920x 1080的分辨率,目前优选4096 x 2400分辨率,基于LCOS技术的高分辨率曝光机,可以实现高分辨率高精度的无掩膜曝光,此曝光机具有重要的应用价值和经济意义,将大大推动我国电子产品行业的发展、提高我国在电子技术领域的竞争力。
本发明提供一种基于LCOS技术的曝光机,包括光源(1)、偏振分光元件PBS(2)、LCOS(3)、投影系统(4)和待曝光工件(5)。其中光源(1)发出的光中p型偏振光通过偏振分光元件PBS(2)后入射到高分辨率的LCOS(3)上,LCOS(3)反射的光为s型偏振光,经偏振分光元件PBS(2)反射后进入投影系统(4),通过投影系统(4)投射到待曝光工件(5),使待曝光工件(5)形成曝光,为缩小曝光机整体体积,本发明所述曝光机可在光路上任意位置加入一个或多个反射镜或棱镜,对光路进行折叠。
所述光源(1)的波长范围为350~470nm,已经经过相关光学系统整形成与LCOS(3)长宽比相匹配,其出射光数值孔径与投影系统(4)物方数值孔径向匹配。
所述偏振分光元件PBS(2)可以是偏振分光棱镜也可以是偏振分光片,偏振分光元件PBS(2)用于分光,对p型偏振光透过,对s型偏振光反射,s型偏振光与p型偏振光成90度角,如图2所示,入射光A经过偏振分光元件PBS(2),形成反射光线As和透射光线Ap,反射光线As为s型偏振光,对成像没有作用不参与系统工作,透射光线Ap为p型偏振光,射向LCOS(3),LCOS(3)使透射光线Ap从p偏振态转变成s偏振态的反射光线Bs,Bs射向偏振分光元件(2),被偏振分光元件(2)反射。
所述LCOS(3)即Liquid Crystal on Silicon硅基液晶,是一种反射元件,使入射p型偏振光转变成s型偏振光,通过控制LCOS(3)上每个像素的开关形成所需图形,LCOS(3)反射后的光线作为曝光图案的发生源,所述LCOS(3)具有大于等于1920 x 1080的分辨率,目前优选4096 x 2400分辨率。
所述投影系统(4)用于把光投影到待曝光工件(5),投影系统(4)由透镜组组成,可以是放大系统,也可以是缩小系统。
所述待曝光工件(5)的表面是一平面,和光路垂直。
附图说明
图1为本发明的结构示意图。
图2为偏振分光元件PBS是偏振分光棱镜的分光图。
图3为偏振分光元件PBS是偏振分光片的分光图。
应理解,在阅读了本发明的内容后,本领域技术人员可以对本发明做各种改动或修改,这些等价形式同样在本申请所附权利要求书所限定的范围。
Claims (6)
1.一种基于LCOS技术的曝光机,其特征在于,包括光源(1)、偏振分光元件PBS(2)、LCOS(3)、投影系统(4)和待曝光工件(5),其中光源(1)发出的光中p型偏振光通过偏振分光元件PBS(2)后入射到高分辨率的LCOS(3)上,LCOS(3)反射的光为s型偏振光,经偏振分光元件PBS(2)反射后进入投影系统(4),通过投影系统(4)投射到待曝光工件(5),使待曝光工件(5)形成曝光,为缩小曝光机整体体积,本发明所述曝光机可在光路上任意位置加入一个或多个反射镜或棱镜,对光路进行折叠。
2.如权利要求1所述的一种基于LCOS技术的曝光机,其特征在于,所述光源(1)的波长范围为350~470nm,已经经过相关光学系统整形成与LCOS(3)长宽比相匹配,其出射光数值孔径与投影系统(4)物方数值孔径向匹配。
3.如权利要求1所述的一种基于LCOS技术的曝光机,其特征在于,所述偏振分光元件PBS(2)可以是偏振分光棱镜也可以是偏振分光片,偏振分光元件PBS(2)用于分光,对p型偏振光透过,对s型偏振光反射,s型偏振光与p型偏振光成90度角。
4.如权利要求1所述的一种基于LCOS技术的曝光机,其特征在于,所述LCOS(3)即Liquid Crystal on Silicon硅基液晶,是一种反射元件,使入射p型偏振光转变成s型偏振光,通过控制LCOS(3)上每个像素的开关形成所需图形,LCOS(3)反射后的光线作为曝光图案的发生源,所述LCOS(3)具有大于等于1920 x 1080的分辨率,目前优选4096 x 2400分辨率。
5.如权利要求1所述的一种基于LCOS技术的曝光机,其特征在于,所述投影系统(4)用于把光投影到待曝光工件(5),投影系统(4)由透镜组组成,可以是放大系统,也可以是缩小系统。
6.如权利要求1所述的一种基于LCOS技术的曝光机,其特征在于,所述待曝光工件(5)的表面是一平面,和光路垂直。
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Cited By (1)
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CN112947011A (zh) * | 2021-03-31 | 2021-06-11 | 深圳光韵达光电科技股份有限公司 | 一种基于lcos芯片的曝光装置及方法 |
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US20130162954A1 (en) * | 2011-12-22 | 2013-06-27 | Min Aik Technology Co., Ltd. | Lcos projection system |
JP2014127449A (ja) * | 2012-12-27 | 2014-07-07 | Dainippon Printing Co Ltd | 照明装置、投射装置、スキャナおよび露光装置 |
CN207965473U (zh) * | 2018-03-01 | 2018-10-12 | 联士光电(深圳)有限公司 | 一种基于lcos技术的曝光机 |
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US20070258018A1 (en) * | 2005-07-25 | 2007-11-08 | Industrial Technology Research Institute | High efficiency liquid crystal display projection system |
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CN112947011A (zh) * | 2021-03-31 | 2021-06-11 | 深圳光韵达光电科技股份有限公司 | 一种基于lcos芯片的曝光装置及方法 |
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