CN110219044A - A kind of single-crystal diamond laser marking growing method - Google Patents
A kind of single-crystal diamond laser marking growing method Download PDFInfo
- Publication number
- CN110219044A CN110219044A CN201910434088.0A CN201910434088A CN110219044A CN 110219044 A CN110219044 A CN 110219044A CN 201910434088 A CN201910434088 A CN 201910434088A CN 110219044 A CN110219044 A CN 110219044A
- Authority
- CN
- China
- Prior art keywords
- crystal diamond
- label
- laser marking
- crystalline substance
- growing method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 80
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 80
- 239000013078 crystal Substances 0.000 title claims abstract description 68
- 238000010330 laser marking Methods 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000000126 substance Substances 0.000 claims abstract description 27
- 230000007547 defect Effects 0.000 claims abstract description 22
- 230000012010 growth Effects 0.000 claims abstract description 21
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims abstract description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000001257 hydrogen Substances 0.000 claims abstract description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 4
- 239000012535 impurity Substances 0.000 claims abstract description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- 230000001105 regulatory effect Effects 0.000 claims description 9
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 9
- 230000003321 amplification Effects 0.000 claims description 4
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 230000001276 controlling effect Effects 0.000 claims 1
- 239000004575 stone Substances 0.000 claims 1
- 238000005406 washing Methods 0.000 claims 1
- 239000011521 glass Substances 0.000 abstract description 3
- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000002000 scavenging effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 238000005491 wire drawing Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Abstract
The invention discloses a kind of single-crystal diamond laser marking growing methods comprising following steps: it is brilliant that (S1) provides single-crystal diamond kind；(S2) laser marking equipment is provided, is marked to form defect on single-crystal diamond kind crystalline substance surface using laser marking equipment；(S3) impurity generated during being marked is removed；(S4) the single-crystal diamond kind crystalline substance after label is put into chemical vapor deposition growth furnace, it is passed through hydrogen and methane, ratio is 100:2 to 100:5, by pressure control in furnace in 10KPa~15KPa, controlling single-crystal diamond kind crystalline substance temperature in furnace is 700 DEG C~800 DEG C, growth time is greater than 10 hours, so that the defect that label is formed is capped and is not filled, label is formed inside single-crystal diamond to realize.Operation of the present invention is simple, and process velocity is fast, and the label for being marked, and making inside diamond is realized with a kind of cost-effective scheme can be observed by the multiplying arrangements such as magnifying glass or naked eyes.
Description
Technical field
The present invention relates to the growths of single-crystal diamond and surface to process, and is in more detail related to a kind of single-crystal diamond laser
Mark growing method.
Background technique
Diamond is obtained extensive use in craftwork manufacture field due to having extremely excellent physicochemical properties.
In order to meet the customization demand of user, the label such as font, trade mark can be usually added inside diamond in process.
But rough diamond can not make marks in inside, can only make marks in diamond surface, it is possible to be worn.
If the regrowth after diamond surface is carved characters, polycrystalline can be generated around label, label is caused to be filled directly or wrap up,
It can not be observed.
In addition, also there is also some defects for the existing method for adding label inside diamond:
1, do etching source etching diamond surface with gas to form the operation that is marked of defect excessively complicated, and it is time-consuming compared with
It is long；
2, the higher cost being marked with focused ion beam processing diamond, method is complicated, takes a long time, and mark
Size is restricted, generally in nanoscale or micron order, can not visually observe directly.
Summary of the invention
The purpose of the present invention is to provide a kind of single-crystal diamond laser marking growing methods, solve to a certain extent
The above problem, easy to operate, process velocity is fast, is realized with a kind of cost-effective scheme and is marked inside diamond,
And the label made can be observed by magnifying glass or naked eyes.
To achieve the goals above, the present invention provides a kind of single-crystal diamond laser marking growing method comprising following
Step:
(S1) it is brilliant to provide single-crystal diamond kind；
(S2) laser marking equipment is provided, is carried out using the laser marking equipment on the single-crystal diamond kind crystalline substance surface
Label forms defect；
(S3) impurity generated during being marked is removed；
(S4) the single-crystal diamond kind crystalline substance after label is put into chemical vapor deposition growth furnace, is passed through hydrogen and first
Alkane, ratio are 100:2 to 100:5, by pressure control in furnace in 10KPa~15KPa, control single-crystal diamond kind crystalline substance temperature in furnace
It is 700 DEG C~800 DEG C, growth time is greater than 10 hours, so that the defect that label is formed is capped and is not filled, thus real
Label is formed inside present single-crystal diamond.
The present invention shows that carrying out processing mark forms defect in diamond using laser marking equipment, then in the table of defect
Face carries out secondary epitaxy growth, and covers but be not filled with defect during the growth process, to reach the shape inside single-crystal diamond
At the effect of label.Laser marking equipment is easy to operate, and process velocity is fast, is convenient for batch rapid processing.
Preferred embodiment in accordance with the present invention, the single-crystal diamond laser marking growing method of the invention are further wrapped
Include step (S5):
After the growth of the single-crystal diamond kind crystalline substance after completing label, the ratio of hydrogen and methane is 100 in regulating stove:
8 to 100:13, air pressure is to 25KPa~30KPa in regulating stove, and single-crystal diamond kind crystalline substance temperature is 1100 DEG C~1300 in regulating stove
DEG C, to accelerate the growth of single-crystal diamond, increase economic efficiency.
Preferred embodiment in accordance with the present invention, the step (S3) specifically includes the following steps:
(S31) the single-crystal diamond kind crystalline substance after impregnating label is heated with chloroazotic acid, removing may remaining metallic element；
(S32) brilliant with the single-crystal diamond kind after acetone ultrasonic cleaning label, remove inorganic matter that may be present；
(S33) brilliant with the single-crystal diamond kind after deionized water ultrasonic cleaning label, removing may remaining acetone；
(S34) brilliant with the single-crystal diamond kind after alcohol ultrasonic cleaning label, remove inorganic matter that may be present；
(S35) plasma etching cleaning is carried out to the single-crystal diamond kind crystalline substance after label, is generated when removing label
Graphite-phase product.
Preferably, the heating soaking time in the step (S31) is 2~4 hours, in the step (S32) to institute
It states in step (S35), the scavenging period of each step is 60 minutes.
Preferred embodiment in accordance with the present invention, the defect formed in the step (S2) is after 0~50 times of amplification for meat
Eye is visible.
Preferably, in the step (S1), the thickness of the single-crystal diamond kind crystalline substance is greater than 0.2mm.
The above and other purposes of the present invention, feature, advantage will be further bright with attached drawing in the following detailed description
Really.
Detailed description of the invention
Fig. 1 is the flow diagram of single-crystal diamond laser marking growing method according to the preferred embodiment of the invention.
Specific embodiment
In the following, being described further in conjunction with attached drawing and specific embodiment to invention, it should be noted that in not phase
Under the premise of conflict, new implementation can be formed between various embodiments described below or between each technical characteristic in any combination
Example.
It is described below for disclosing the present invention so that those skilled in the art can be realized the present invention.It is excellent in being described below
Embodiment is selected to be only used as illustrating, it may occur to persons skilled in the art that other obvious modifications.It defines in the following description
Basic principle of the invention can be applied to other embodiments, deformation scheme, improvement project, equivalent program and do not carry on the back
Other technologies scheme from the spirit and scope of the present invention.
It will be understood by those skilled in the art that in exposure of the invention, term " longitudinal direction ", " transverse direction ", "upper",
The orientation or position of the instructions such as "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside"
Relationship is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of description of the present invention and simplification of the description, rather than
The device or element of indication or suggestion meaning must have a particular orientation, be constructed and operated in a specific orientation, therefore above-mentioned
Term is not considered as limiting the invention.
It is understood that term " one " is interpreted as " at least one " or " one or more ", i.e., in one embodiment,
The quantity of one element can be one, and in a further embodiment, the quantity of the element can be it is multiple, term " one " is no
It can be interpreted as the limitation to quantity.
Referring to Fig. 1 of attached drawing, single-crystal diamond laser marking growing method according to the preferred embodiment of the invention will connect
It is elucidated in the description got off comprising following steps:
(S1) it is brilliant to provide single-crystal diamond kind；
(S2) laser marking equipment is provided, is carried out using the laser marking equipment on the single-crystal diamond kind crystalline substance surface
Label forms defect；
(S3) impurity generated during being marked is removed；
(S4) the single-crystal diamond kind crystalline substance after label is put into chemical vapor deposition growth furnace, is passed through hydrogen and first
Alkane, ratio are 100:2 to 100:5, by pressure control in furnace in 10KPa~15KPa, control single-crystal diamond kind crystalline substance temperature in furnace
It is 700 DEG C~800 DEG C, growth time is greater than 10 hours.
Experiment shows that single-crystal diamond in temperature is 700 DEG C~800 DEG C, and air pressure is horizontal under conditions of being 10KPa~15KPa
Preferable to epitaxial growth, single crystal grain is larger, and growth rate is slower, less than 10 μm/h, will not the defect that is formed of filling-tag,
Polycrystalline diamond will not be generated, so that the defect that label is formed is capped and is not filled, to realize in single-crystal diamond
Inside forms label.
It is easily understood that completing the single-crystal diamond after label can be, but not limited to for jewel, diamond cutter, gold
The fields such as hard rock wire drawing die.
The present invention shows that carrying out processing mark forms defect in diamond using laser marking equipment, then in the table of defect
Face carries out secondary epitaxy growth, and covers but be not filled with defect during the growth process, to reach the shape inside single-crystal diamond
At the effect of label.
Preferably, in the step (S1), surface flawless, polycrystalline, crystal form zero defect are preferentially selected, and thickness is greater than
The single-crystal diamond kind crystalline substance of 0.2mm is used for subsequent processing mark, to guarantee the quality of product.
In the step (S2), the laser marking equipment can be common apparatus in the prior art, specific structure
It is not repeated herein with working principle.Laser marking equipment it is easy to operate, process velocity is fast, be convenient for batch rapid processing.It is preferred that
The laser marking equipment of power adjustable is selected on ground, convenient for realizing the marking of defects of different demands by regulation power.It is easy reason
Solution, the defect pattern that the label is formed can be, but not limited to be font, trade mark etc., unlimited shapes and sizes.
Preferably, the defect formed in the step (S2) the amplification 0 by the simple amplification tool such as magnifying glass~
It is i.e. visible for naked eyes after 50 times.
Specifically, the step (S3) specifically includes the following steps:
(S31) the single-crystal diamond kind crystalline substance after impregnating label is heated with chloroazotic acid, removing may remaining metallic element；
(S32) brilliant with the single-crystal diamond kind after acetone ultrasonic cleaning label, remove inorganic matter that may be present；
(S33) brilliant with the single-crystal diamond kind after deionized water ultrasonic cleaning label, removing may remaining acetone；
(S34) brilliant with the single-crystal diamond kind after alcohol ultrasonic cleaning label, remove inorganic matter that may be present；
(S35) plasma etching cleaning is carried out to the single-crystal diamond kind crystalline substance after label, is generated when removing label
Graphite-phase product.
Preferably, the heating soaking time in the step (S31) is 2~4 hours, in the step (S32) to institute
It states in step (S35), the scavenging period of each step is 60 minutes.
Further, on the basis of above-mentioned steps, the single-crystal diamond laser marking growing method of the invention is also
Including step (S5), the step (S5) is arranged after the step (S4):
After the growth of the single-crystal diamond kind crystalline substance after completing label, the ratio of hydrogen and methane is 100 in regulating stove:
8 to 100:13, air pressure is to 25KPa~30KPa in regulating stove, and single-crystal diamond kind crystalline substance temperature is 1100 DEG C~1300 in regulating stove
DEG C, to accelerate the growth of single-crystal diamond, growth rate is most fast up to 50 μm/h, increases economic efficiency.
It should be understood by those skilled in the art that foregoing description and the embodiment of the present invention shown in the drawings are only used as illustrating
And it is not intended to limit the present invention.The purpose of the present invention has been fully and effectively achieved.Function and structural principle of the invention exists
It shows and illustrates in embodiment, under without departing from the principle, embodiments of the present invention can have any deformation or modification.
Claims (6)
1. a kind of single-crystal diamond laser marking growing method, which comprises the following steps:
(S1) it is brilliant to provide single-crystal diamond kind；
(S2) laser marking equipment is provided, is marked using the laser marking equipment on the single-crystal diamond kind crystalline substance surface
Form defect；
(S3) impurity generated during being marked is removed；
(S4) the single-crystal diamond kind crystalline substance after label is put into chemical vapor deposition growth furnace, is passed through hydrogen and methane,
Ratio is 100:2 to 100:5, and by pressure control in furnace in 10KPa~15KPa, controlling single-crystal diamond kind crystalline substance temperature in furnace is
700 DEG C~800 DEG C, growth time is greater than 10 hours.
2. single-crystal diamond laser marking growing method according to claim 1, which is characterized in that further comprise step
(S5):
Complete label after single-crystal diamond kind crystalline substance growth after, in regulating stove the ratio of hydrogen and methane for 100:8 extremely
100:13, air pressure is to 25KPa~30KPa in regulating stove, and single-crystal diamond kind crystalline substance temperature is 1100 DEG C~1300 DEG C in regulating stove.
3. single-crystal diamond laser marking growing method according to claim 1 or 2, which is characterized in that the step
(S3) specifically includes the following steps:
(S31) the single-crystal diamond kind crystalline substance after impregnating label is heated with chloroazotic acid, removing may remaining metallic element；
(S32) brilliant with the single-crystal diamond kind after acetone ultrasonic cleaning label, remove inorganic matter that may be present；
(S33) brilliant with the single-crystal diamond kind after deionized water ultrasonic cleaning label, removing may remaining acetone；
(S34) brilliant with the single-crystal diamond kind after alcohol ultrasonic cleaning label, remove inorganic matter that may be present；
(S35) plasma etching cleaning is carried out to the single-crystal diamond kind crystalline substance after label, the stone generated when removing label
Black phase product.
4. single-crystal diamond laser marking growing method according to claim 3, which is characterized in that in the step
(S31) heating soaking time in is 2~4 hours, in the step (S32) to the step (S35), each step it is clear
Washing the time is 60 minutes.
5. single-crystal diamond laser marking growing method according to claim 1 or 2, which is characterized in that in the step
(S2) defect formed in is visible for naked eyes after 0~50 times of amplification.
6. single-crystal diamond laser marking growing method according to claim 1 or 2, which is characterized in that in the step
(S1) in, the thickness of the single-crystal diamond kind crystalline substance is greater than 0.2mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910434088.0A CN110219044B (en) | 2019-05-23 | 2019-05-23 | Laser marking growth method of single crystal diamond |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910434088.0A CN110219044B (en) | 2019-05-23 | 2019-05-23 | Laser marking growth method of single crystal diamond |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110219044A true CN110219044A (en) | 2019-09-10 |
| CN110219044B CN110219044B (en) | 2021-07-06 |
Family
ID=67818254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910434088.0A Active CN110219044B (en) | 2019-05-23 | 2019-05-23 | Laser marking growth method of single crystal diamond |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110219044B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170261855A1 (en) * | 2016-03-10 | 2017-09-14 | Uab Research Foundation | Methods for preparing encapsulated markings on diamonds |
| CN108103571A (en) * | 2018-01-11 | 2018-06-01 | 宁波晶钻工业科技有限公司 | A kind of single-crystal diamond preparation facilities and method |
| CN108373345A (en) * | 2018-01-16 | 2018-08-07 | 华北水利水电大学 | Preprocess method before a kind of coating of laser marking blade |
| CN108582502A (en) * | 2018-05-07 | 2018-09-28 | 江苏锋泰工具有限公司 | Diamond saw blade and preparation method thereof |
-
2019
- 2019-05-23 CN CN201910434088.0A patent/CN110219044B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170261855A1 (en) * | 2016-03-10 | 2017-09-14 | Uab Research Foundation | Methods for preparing encapsulated markings on diamonds |
| CN108103571A (en) * | 2018-01-11 | 2018-06-01 | 宁波晶钻工业科技有限公司 | A kind of single-crystal diamond preparation facilities and method |
| CN108373345A (en) * | 2018-01-16 | 2018-08-07 | 华北水利水电大学 | Preprocess method before a kind of coating of laser marking blade |
| CN108582502A (en) * | 2018-05-07 | 2018-09-28 | 江苏锋泰工具有限公司 | Diamond saw blade and preparation method thereof |
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| Publication number | Publication date |
|---|---|
| CN110219044B (en) | 2021-07-06 |
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| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Zhang Junan Inventor after: Hu Fusheng Inventor after: Wang Qi Inventor after: Zhang Tianyi Inventor after: Zhang Junheng Inventor before: Hu Fusheng Inventor before: Wang Qi Inventor before: Zhang Tianyi Inventor before: Zhang Junheng Inventor before: Zhang Junan |
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| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 315200 No. 777, Zhong Guan Xi Road, Zhuang City Street, Zhenhai District, Ningbo, Zhejiang. Patentee after: Ningbo Crystal Diamond Technology Co.,Ltd. Address before: 315200 No. 777, Zhong Guan Xi Road, Zhuang City Street, Zhenhai District, Ningbo, Zhejiang. Patentee before: Ningbo Jingduan Industrial Technology Co.,Ltd. |
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| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: No. 998 Zhongguan Road, Jiaochuan Street, Zhenhai District, Ningbo City, Zhejiang Province, 315200 Patentee after: Ningbo Crystal Diamond Technology Co.,Ltd. Country or region after: China Address before: 315200 No. 777, Zhong Guan Xi Road, Zhuang City Street, Zhenhai District, Ningbo, Zhejiang. Patentee before: Ningbo Crystal Diamond Technology Co.,Ltd. Country or region before: China |