CN110212078A - A kind of micro- disk resonant cavity light emitting devices of electrical pumping and preparation method thereof - Google Patents
A kind of micro- disk resonant cavity light emitting devices of electrical pumping and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 28
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- 238000007747 plating Methods 0.000 claims abstract description 7
- 239000011248 coating agent Substances 0.000 claims description 35
- 238000000576 coating method Methods 0.000 claims description 35
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- 238000001039 wet etching Methods 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 8
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1071—Ring-lasers
- H01S5/1075—Disk lasers with special modes, e.g. whispering gallery lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/02—MBE
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Abstract
The present invention relates to photoelectron, semiconductor laser technique field, a kind of particularly micro- disk resonant cavity light emitting devices of electrical pumping and preparation method thereof.The invention discloses micro- disk resonant cavity light emitting devices of a kind of electrical pumping and preparation method thereof, wherein the micro- disk resonant cavity light emitting devices of electrical pumping include semiconductor microdisk, metal support column and metal support substrate, semiconductor microdisk is supported on metal support substrate by metal support column, and the edge of semiconductor microdisk protrudes from the side wall of metal support column and forms hanging structure.The present invention has well solved the injection problem of the electric current with the micro- disk resonant cavity of edge hanging structure, and can preferably improve the heat dissipation characteristics of device compared to other semiconductor support materials, metal support columns such as Si in the micro- disk resonant cavity light emitting devices of tradition；Metal support column can be prepared with metal support substrate by way of plating, and simple process, all preparation processes are compatible with standard semiconductor preparation process, meet the integrated needs of extensive photoelectricity.
Description
Technical field
The invention belongs to photoelectrons, semiconductor laser technique field, send out more particularly to a kind of micro- disk resonant cavity of electrical pumping
Optical device and preparation method thereof.
Background technique
Semiconductor microactuator resonant cavity is because they are just attract people to the strong restriction effect of light and are more and more infusing in recent years
Meaning.They not only provide good platform for the research of quantrm electrodynamics scheduling theory, also in single-photon source, micro-nano laser
There is good application prospect in the practical applications such as device, micro-nano LED.Wherein semiconductor microdisk resonant cavity is a kind of based on echo
The optical microcavity system of wall mode, light is propagated, resonance due to total reflection along the edge of micro- disk in resonant cavity.Micro- disk resonance
Chamber has many advantages, such as simple structure, strong optical confinement effect, small mode volume, low current work, in biosensor, photoelectricity collection
It is all widely used at equal.
Since the mode in semiconductor microdisk resonant cavity is mainly all limited in the edge of micro- disk, so semiconductor microdisk is humorous
Vibration chamber often all has a support section connection substrate in micro- disk center, and is then hanging knot close to the part of micro- plate edge
Structure can reduce mode in this way and be lost to the optical diffraction of substrate, have better limitation to optical mode in vertical direction.But this
The hanging structure of kind brings difficulty to the electric current injection of device, and most of semiconductor microdisk resonant cavity with hanging structure is all
It can only operate under the conditions of optical pumping.The support column of semiconductor microdisk resonant cavity lower part is wet by carrying out to substrate under normal conditions
Prepared by the mode of method etching, in order to realize the electric current injection to active area in semiconductor microdisk, the support column below micro- disk is just
It must be used as current channel, this requires need in support column and semiconductor microdisk with the epitaxial layer that support column directly contacts
Good electric conductivity.It is feasible for preparing micro- disk resonant cavity of electrical pumping in this way in InP-base semiconductor material, because
The InP substrate of high conductivity is easy to get and is relatively easy to carry out to the wet etching of InP.Y.H.Kim in 2012 et al. just leads to
Micro- disk resonance-cavity laser with edge hanging structure that this mode is prepared for electrical pumping is crossed, be specifically detailed in " Kim Y H,
Kwon S H,Lee J M,et al.Graphene-contact electrically driven microdisk lasers
[J] .Nature communications, 2012,3:1123 " and " Park H G, Kim Y H, Hwang M, et
al.Nanolaser generator using graphene electrode and method for manufacturing
The same:U.S.Patent 8,908,736 [P] .2014-12-9 ", electric current pass through the support column and micro- disk below micro- disk
The electrode injection active area of upper surface.But it is difficult to pass through again in other semiconductor materials, especially GaN base semiconductor material
Such mode prepares the micro- disk chamber luminescent device of electrical pumping.By taking GaN base semiconductor material as an example, GaN often epitaxial growth GaN,
In SiC and Sapphire Substrate.It is more difficult to the wet etching of these substrates, it is difficult to form hanging structure, and GaN and lining
The epitaxial layer that bottom directly contacts often is low temperature nucleation layer, and crystal quality is poor and resistivity is larger, it is difficult to as current channel.
The epitaxial growth of GaN obtains greater advance on a si substrate in recent years, and the wet etching of Si is relatively easy to, thus is easy preparation tool
There is micro- disk resonant cavity of hanging structure, but the low temperature nucleation layer that its micro- disk is contacted with Si support column still has biggish resistance
Rate, it is difficult to realize that electric current injects.2004 and 2018, M.Kneissl et al. " Kneissl M, Teepe M,
Miyashita N,et al.Current-injection spiral-shaped microcavity disk laser
diodes with unidirectional emission[J].Applied Physics Letters,2004,84(14):
2485-2487 " and M.Feng et al. " Feng M, He J, Sun Q, et al.Room-temperature electrically
pumped InGaN-based microdisk laser grown on Si[J].Optics express,2018,26(4):
5043-5051 " reports the micro- disk resonance-cavity laser of GaN base of electrical pumping respectively, but their semiconductor microdisk is a kind of
Cylindrical structure is connected directly with substrate there is no vacantly, and electric current is that micro- disk note is entered laterally by the n-GaN of micro- disk two sides
Enter active area.Due to not having hanging structure, diffraction loss of the light field into substrate is very big in resonant cavity, it is necessary to be specifically designed extension
Piece, forming waveguiding structure in the horizontal direction could be limited in light field near active area in vertical direction, and the Q value of resonant cavity
It is lower.
Therefore, for the difficulty in the micro- disk resonant cavity light emitting devices of the above electrical pumping, needing to develop a kind of new can expire
The micro- disk resonant cavity light emitting devices of electrical pumping of all semiconductor materials of foot.
Summary of the invention
The purpose of the present invention is to provide micro- disk resonant cavity light emitting devices of a kind of electrical pumping and preparation method thereof to solve
Above-mentioned technical problem.
To achieve the above object, the technical solution adopted by the present invention are as follows: a kind of micro- disk resonant cavity light emitting devices of electrical pumping, packet
Semiconductor microdisk, metal support column and metal support substrate are included, the semiconductor microdisk is supported on metal by metal support column
In support substrate, the edge of the semiconductor microdisk protrudes from the side wall of metal support column and forms hanging structure.
Further, current extending is additionally provided between the semiconductor microdisk and metal support column.
Further, the semiconductor microdisk is circular configuration.
Further, the metal support column is cylindrical structure.
Further, the metal support column is aligned with semiconductor microactuator disk center.
Further, the semiconductor microdisk successively include from the bottom up the folded p-type semiconductor epitaxial layer set, active area and
N-type semiconductor epitaxial layer.
Further, the metal support column and metal support substrate are made of copper or aluminum material, and are integrally formed.
The invention also discloses a kind of preparation method for the above-mentioned micro- disk resonant cavity light emitting devices of electrical pumping, features
It is, includes the following steps:
S1 grows the semiconductor epitaxial layers of pin structure on substrate, enters step S2；
S2 opens foraminate media coating in semiconductor epitaxial layers outside deposition, and the aperture is through media coating to half
Conductor epitaxial layer outer surface, enters step S3；
S3 prepares metal layer on media coating surface, which expires the filling small hole of media coating, enters step
S4；
S4 removes substrate, enters step S5；
S5 performs etching semiconductor epitaxial layers, forms semiconductor microdisk, enters step S6；
S6 removes media coating, enters step S7；
S7 deposits top electrode in semiconductor microactuator panel surface, completes device preparation.
Further, in step s 2, the media coating is SiO2Media coating.
Further, in step sl, the semiconductor epitaxial layers of pin structure are grown using MOCVD MBE mode；
In step s3, metal layer is prepared on media coating surface using plating；
In step s 5, semiconductor microdisk is formed using photoetching or dry etching；
In step s 6, media coating is removed by the way of using wet etching.
Advantageous effects of the invention:
The marginal portion of semiconductor microdisk of the invention separates to form hanging structure with metal support substrate, thus vertical
Stronger limitation is formed to light field in resonant cavity on direction, metal support column and metal support substrate can play electric current injection simultaneously
Effect, well solved the electric current injection problem with the micro- disk resonant cavity of edge hanging structure, and compared to the micro- disk of tradition
Other semiconductor support materials such as Si in resonant cavity light emitting devices and substrate, metal support column and metal support substrate also can be more
Improve the heat dissipation characteristics of device well.
The preparation of the techniques such as plating and wet etching can be used in the present invention, may be implemented to be suitable for any semiconductor material
The preparation of the micro- disk resonant cavity light emitting devices of the electrical pumping of system, all preparation processes are compatible with standard semiconductor preparation process, full
The integrated needs of the extensive photoelectricity of foot, have a wide range of applications.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly introduced, it should be apparent that, drawings in the following description are only some embodiments of the invention, for this
For the those of ordinary skill in field, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is the structure sectional view of the micro- disk resonant cavity light emitting devices of electrical pumping of the specific embodiment of the invention；
Fig. 2 is the preparation method flow chart of invention specific embodiment；
Fig. 3 is epitaxial slice structure schematic diagram；
Fig. 4 is graphically to open foraminate SiO in extension on piece deposition2Media coating schematic diagram；
Fig. 5 is the schematic structural cross-sectional view of sample after electroplating electrode is deposited；
Fig. 6 is the schematic structural cross-sectional view of sample after plating metal support substrate；
Sample is inverted and removes the schematic structural cross-sectional view after original substrate by Fig. 7；
Fig. 8 is the schematic structural cross-sectional view of sample after the micro- dish platform face of etching；
Fig. 9 wet etching removes SiO2The schematic structural cross-sectional view of sample after media coating；
Figure 10 is the schematic structural cross-sectional view of sample after the micro- disk top electrode of vapor deposition.
Specific embodiment
To further illustrate that each embodiment, the present invention are provided with attached drawing.These attached drawings are that the invention discloses one of content
Point, mainly to illustrate embodiment, and the associated description of specification can be cooperated to explain the operation principles of embodiment.Cooperation ginseng
These contents are examined, those of ordinary skill in the art will be understood that other possible embodiments and advantages of the present invention.In figure
Component be not necessarily to scale, and similar component symbol is conventionally used to indicate similar component.
Now in conjunction with the drawings and specific embodiments, the present invention is further described.
As shown in Figure 1, a kind of micro- disk resonant cavity light emitting devices of electrical pumping, including semiconductor microdisk 1,2 and of metal support column
Metal support substrate 3, the semiconductor microdisk 1 are supported on 3 upper surface of metal support substrate by metal support column 2, and described half
The edge of the micro- disk 1 of conductor protrudes from the side wall of metal support column 2 and forms hanging structure, thus vertical direction (i.e. perpendicular to
The direction of metal support substrate 3) on stronger limitation formed to light field in the resonant cavity of semiconductor microdisk 1, metal support column 2 with
Metal support substrate 3 can play the role of electric current injection simultaneously, and having well solved has the micro- disk resonant cavity of edge hanging structure
Electric current inject problem, and compared to other semiconductor support materials and linings such as Si in the micro- disk resonant cavity light emitting devices of tradition
Bottom, metal support column 2 and metal support substrate 3 also can preferably improve the heat dissipation characteristics of device.
It further include top electrode 81 in this specific embodiment, the upper surface of semiconductor microdisk 1 is arranged in the top electrode 81
(on the basis of the direction of Fig. 1).The material of top electrode 81 can be Cr, Au, Ni, Ti or the good metal electricity of other conductivity
Pole material or different metal material layer laminate such as Cr/Au, Ni/Au, Ti/Au are constituted.
In this specific embodiment, the preferably circular structure of the semiconductor microdisk 1 is compact-sized and easily prepared.But simultaneously
It is not limited, in some embodiments, semiconductor microdisk 1 is also possible to triangle, square, hexagon etc..
Semiconductor microdisk 1 successively includes that folded p-type semiconductor epitaxial layer 14, active area 13 and the N-shaped set is partly led from the bottom up
Body epitaxial layer 12 forms PIN structural.It can be made of materials such as GaN base, GaAs base, InP-bases.
In this specific embodiment, the preferably cylindrical structure of the metal support column 2, with circular 1 knot of semiconductor microdisk
Structure is more adapted to.But it is not limited thereto, in some embodiments, metal support column 2 is also possible to triangle cylindricality, hexagonal column shape
Deng.Metal support column 2 is preferably made of copper or aluminum material, and electric conductivity thermal conductivity is good, and at low cost, certainly, in other implementations
In example, it is also possible to the good metal material of other thermal conductivity.
The diameter of semiconductor microdisk 1 is greater than the diameter of metal support column 2, and semiconductor microdisk 1 and 2 center of metal support column
Alignment, i.e., the central axes of semiconductor microdisk 1 are overlapped with the central axes of metal support column 2, so that preparation process is simpler, and structure
Stability is more preferable, and but not limited to this.In some embodiments, semiconductor microdisk 1 and metal support column 2 can not also centers pair
Together, as long as the edge of semiconductor microdisk 1 protrudes from the side wall of metal support column 2 and forms hanging structure.
In this specific embodiment, metal support substrate 3 is preferably made of copper or aluminum material, and electric conductivity thermal conductivity is good, and
It is at low cost, certainly, in other embodiments, it is also possible to the good metal material of other thermal conductivity.
In this specific embodiment, the metal support column 2 and metal support substrate 3 are integrally formed, and preparation process is easy, and
Conductive effect is more preferable.
In some embodiments, according to the semiconductor material conductivity difference property of can choose of p-type semiconductor epitaxial layer 14
Ground deposition current extension layer (not shown) between p-type semiconductor epitaxial layer 14 and metal support column 2.Such as in GaN base material
In material system, p-GaN current expansion characteristic is poor, needs to deposit the current extendings such as ITO, but in GaAs base and InP-base material
It then can be omitted in material.
As shown in Fig. 2, the invention also discloses a kind of preparations for the above-mentioned micro- disk resonant cavity light emitting devices of electrical pumping
Method includes the following steps:
S1 grows the semiconductor epitaxial layers of pin structure on substrate, enters step S2.
Specifically, as shown in figure 3, growing pin structure semiconductor epitaxial on substrate 11 using MOCVD MBE method
Layer, specifically: successively growing n-type semiconductor epitaxial layers 12, active area 13 and p-type semiconductor epitaxial layer 14 on substrate 11,
Form epitaxial wafer.The material of substrate 11 is accordingly selected according to different semiconductor material systems, is used as GaN base material
The substrates such as GaN, sapphire, Si, SiC, the growth of GaAs sill are generally exactly to use GaAs substrate, and InP-base Material growth uses InP
Substrate.
According to the conductivity difference property of can choose of the material of different p-type semiconductor epitaxial layers 14 outside p-type semiconductor
Prolong the current extendings such as 14 surface of layer preparation ITO.Such as in GaN base material system, p-GaN current expansion characteristic is poor, then in p
14 surface of type semiconductor layer deposits the current extendings such as ITO, but then can be omitted in GaAs base and InP-base material.
In this specific embodiment, current extending is not prepared.
S2 opens foraminate media coating in semiconductor epitaxial layers outside deposition, and the aperture is through media coating to half
Conductor epitaxial layer outer surface, enters step S3.
Specifically, as shown in figure 4, preparing SiO in the upper surface of p-type semiconductor epitaxial layer 142Media coating 21 is (certainly,
In other embodiments, media coating 21 is also possible to SiN, TiO2、Ta2O5Etc. the easy media coating for carrying out wet etching),
And use the techniques such as photoetching by SiO221 figure of media coating dissolves aperture 211, and aperture 211 is through media coating 21 to p-type half
The outer surface of conductor epitaxial layer 14.SiO2The thickness of deielectric-coating 21 can be several hundred nanometers to several microns, and the diameter of aperture 211 can
Think several microns to several hundred microns.
S3 prepares metal layer on media coating surface, which expires the filling small hole of media coating, enters step
S4。
Specifically, as shown in figure 5, first using the modes such as sputtering or vapor deposition in SiO221 surface of media coating and aperture
211 side wall and bottom surface prepare a flood metal electrode layer 31, as the electrode of subsequent electroplating process, while retaining in step S2
The shape of aperture 211.The material of metal electrode layer 31 can be Cr, Au, Ni, Ti or the good metal electrode of other conductivity
Material or different metal material layer laminate such as Cr/Au, Ni/Au, Ti/Au are constituted.
Then, as shown in fig. 6, using electric plating method in 31 upper surface electroplated metal layer 41 of metal electrode layer, metal layer
41 thickness can be tens to several hundred microns, and the material of metal layer 41 can be good for copper, aluminium or other thermal conductivity
Metal material.Metal layer 41 fills aperture 211 full.
S4 removes substrate, enters step S5.
Specifically, as shown in fig. 7, the method for being inverted and using removing, polishing or etching for the step S3 sample formed
Remove substrate 11.
S5 performs etching semiconductor epitaxial layers, forms semiconductor microdisk, enters step S6.
Specifically, as shown in figure 8, preparing semiconductor microdisk 1, the cutoff layer of etching using the methods of photoetching and etching
For SiO2Media coating 21, makes SiO221 exposing surface of media coating.The diameter of semiconductor microdisk 1 can be several to several hundred microns,
But it is greater than the diameter of aperture 211.
S6 removes media coating, enters step S7.
Specifically, as shown in figure 9, the mode using wet etching removes SiO2Media coating 21, below semiconductor microdisk 1
SiO2It also can be by inside undercutting, thus the marginal portion for making semiconductor microdisk 1 and metal layer 41 and metal outside aperture 211
The hanging structure with the air gap, the metal layer inside aperture 211 are formed between electrode layer 31 (constituting metal support substrate 3)
41 and metal electrode layer 31 then becomes the support construction of semiconductor microdisk 1 and to play electric current in electric current injection simultaneously logical
Road effect, that is, be used as metal support column 2.
S7 deposits top electrode in semiconductor microactuator panel surface, completes device preparation.
Specifically, as shown in Figure 10, being prepared using the modes such as sputtering or vapor deposition in 12 upper surface of n-type semiconductor epitaxial layer
Top electrode 81, the material of top electrode 81 can for Cr, Au, Ni, Ti or the good metal electrode material of other conductivity or not
It is constituted with metal material layer laminate such as Cr/Au, Ni/Au, Ti/Au, completes device preparation.
The preparation of the techniques such as plating and wet etching can be used in the present invention, may be implemented to be suitable for any semiconductor material
The preparation of the micro- disk resonant cavity light emitting devices of the electrical pumping of system, all preparation processes are compatible with standard semiconductor preparation process, full
The integrated needs of the extensive photoelectricity of foot, have a wide range of applications.
Although specifically showing and describing the present invention in conjunction with preferred embodiment, those skilled in the art should be bright
It is white, it is not departing from the spirit and scope of the present invention defined by the appended claims, it in the form and details can be right
The present invention makes a variety of changes, and is protection scope of the present invention.
Claims (10)
1. a kind of micro- disk resonant cavity light emitting devices of electrical pumping, it is characterised in that: including semiconductor microdisk, metal support column and metal
Support substrate, the semiconductor microdisk are supported on metal support substrate by metal support column, the side of the semiconductor microdisk
Edge protrudes from the side wall of metal support column and forms hanging structure.
2. the micro- disk resonant cavity light emitting devices of electrical pumping according to claim 1, it is characterised in that: the semiconductor microdisk with
Current extending is additionally provided between metal support column.
3. the micro- disk resonant cavity light emitting devices of electrical pumping according to claim 1, it is characterised in that: the semiconductor microdisk is
Circular configuration.
4. the micro- disk resonant cavity light emitting devices of electrical pumping according to claim 3, it is characterised in that: the metal support column is
Cylindrical structure.
5. the micro- disk resonant cavity light emitting devices of electrical pumping according to claim 4, it is characterised in that: the metal support column with
The alignment of semiconductor microactuator disk center.
6. the micro- disk resonant cavity light emitting devices of electrical pumping according to claim 1, it is characterised in that: the semiconductor microdisk from
Under up successively include folded p-type semiconductor epitaxial layer, active area and the n-type semiconductor epitaxial layer set.
7. the micro- disk resonant cavity light emitting devices of electrical pumping according to claim 1, it is characterised in that: the metal support column and
Metal support substrate is made of copper or aluminum material, and is integrally formed.
8. a kind of preparation method for the micro- disk resonant cavity light emitting devices of electrical pumping described in claim 1, which is characterized in that packet
Include following steps:
S1 grows the semiconductor epitaxial layers of pin structure on substrate, enters step S2；
S2 opens foraminate media coating in semiconductor epitaxial layers outside deposition, and the aperture is through media coating to semiconductor
Epitaxial layer outer surface, enters step S3；
S3 prepares metal layer on media coating surface, which expires the filling small hole of media coating, enters step S4；
S4 removes substrate, enters step S5；
S5 performs etching semiconductor epitaxial layers, forms semiconductor microdisk, enters step S6；
S6 removes media coating, enters step S7；
S7 deposits top electrode in semiconductor microactuator panel surface, completes device preparation.
9. the micro- disk resonant cavity light emitting devices of electrical pumping according to claim 8, it is characterised in that: in step s 2, described
Media coating is SiO2Media coating.
10. the micro- disk resonant cavity light emitting devices of electrical pumping according to claim 9, it is characterised in that: in step sl, use
MOCVD MBE mode grows the semiconductor epitaxial layers of pin structure；
In step s3, metal layer is prepared on media coating surface using plating；
In step s 5, semiconductor microdisk is formed using photoetching or dry etching；
In step s 6, media coating is removed by the way of using wet etching.
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| CN110212078B (en) | 2020-10-27 |
| KR20200143410A (en) | 2020-12-23 |
| KR102434130B1 (en) | 2022-08-18 |
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