CN110212065B - PVD sputtering equipment, LED device and manufacturing method thereof - Google Patents

PVD sputtering equipment, LED device and manufacturing method thereof Download PDF

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CN110212065B
CN110212065B CN201910501543.4A CN201910501543A CN110212065B CN 110212065 B CN110212065 B CN 110212065B CN 201910501543 A CN201910501543 A CN 201910501543A CN 110212065 B CN110212065 B CN 110212065B
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layer
buffer layer
substrate
led device
sputtering
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CN110212065A (en
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王爱民
程伟
尧刚
卓祥景
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Xiamen Changelight Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

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  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
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Abstract

The invention provides PVD sputtering equipment, an LED device and a manufacturing method thereof, wherein the PVD sputtering equipment comprises the following steps: providing a patterned substrate; forming Al on the surface of the substrate(x)CU(1‑x)N buffer layer; in the Al(x)CU(1‑x)And a GaN layer, an N-type GaN layer, a multi-quantum well layer, an electronic barrier layer, a P-type GaN layer, an ohmic contact layer, an N electrode and a P electrode are formed on the surface of the N buffer layer. Al in contrast to AlN buffer layer(x)CU(1‑x)The N buffer layer can obviously improve lattice stress between the substrate and the GaN layer, and the performance of the LED device is improved. And, due to Al(x)CU(1‑x)The N buffer layer contains CuN, thereby making Al(x)CU(1‑x)The N buffer layer has poor stability and is easily chemically corroded, so that Al can be removed(x)CU(1‑x)The N buffer layer is used as a sacrificial layer when the substrate is stripped.

Description

PVD sputtering equipment, LED device and manufacturing method thereof
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to PVD (physical vapor deposition) sputtering equipment, an LED (light-emitting diode) device and a manufacturing method thereof.
Background
In the field of LEDs, the AlN buffer layer is added on the substrate, so that the photoelectric performance and equipment productivity of an LED device can be effectively improved, and the production cost is reduced. Although the crystal quality of the GaN film grown subsequently can be better after the ALN buffer layer is formed on the patterned sapphire substrate by using a PVD (Physical Vapor Deposition) technique in the prior art, the better crystal quality may cause a larger stress between the GaN film and the sapphire substrate, which may cause the problem of warping of the GaN film grown subsequently, and affect the performance of the LED device. Furthermore, since the AlN film is chemically stable, it is difficult to chemically etch and strip, and thus, the AlN buffer layer is difficult to apply to the flip-chip LED device.
Disclosure of Invention
In view of this, the invention provides a PVD sputtering apparatus, an LED device and a method for manufacturing the LED device, so as to solve the problems of large lattice stress and poor performance caused by adding an ALN buffer layer on a substrate in the prior art.
In order to achieve the purpose, the invention provides the following technical scheme:
a method for manufacturing an LED device comprises the following steps:
providing a patterned substrate;
forming Al on the surface of the substrate(x)CU(1-x)N buffer layer;
in the Al(x)CU(1-x)And a GaN layer, an N-type GaN layer, a multi-quantum well layer, an electronic barrier layer, a P-type GaN layer, an ohmic contact layer, an N electrode and a P electrode are formed on the surface of the N buffer layer.
Optionally, forming Al on the surface of the substrate(x)CU(1-x)The N buffer layer includes:
forming Al on the surface of the substrate by using a CuAl alloy target material by adopting a PVD (physical vapor deposition) process(x)CU(1-x)And an N buffer layer.
Optionally, the content of Cu in the CuAl alloy target material is between 0 and 10 percent.
Alternatively, the Al(x)CU(1-x)The thickness range of the N buffer layer is 5 nm-100 nm.
An LED device comprises a patterned substrate and Al on the surface of the substrate(x)CU(1-x)N buffer layer and Al(x)CU(1-x)The GaN layer, the N-type GaN layer, the multi-quantum well layer, the electron blocking layer, the P-type GaN layer, the ohmic contact layer, the N electrode and the P electrode are arranged on the surface of the N buffer layer.
Alternatively, the Al(x)CU(1-x)The N buffer layer is formed on the surface of the substrate by using a CuAl alloy target material through a PVD process.
Optionally, the content of Cu in the CuAl alloy target material is between 0 and 10 percent.
Alternatively, the Al(x)CU(1-x)The thickness range of the N buffer layer is 5 nm-100 nm.
The PVD sputtering equipment comprises a sputtering cavity, a controller in coupling connection with the sputtering cavity, a sputtering target arranged in the sputtering cavity, and a substrate supporting seat arranged opposite to the sputtering target, wherein a protective cover is arranged on the surface of the sputtering target, the sputtering target comprises a CuAl alloy target, and Al is deposited on a substrate by sputtering the CuAl alloy target(x)CU(1-x)And an N buffer layer.
Compared with the prior art, the technical scheme provided by the invention has the following advantages:
according to the PVD sputtering equipment, the LED device and the manufacturing method thereof, provided by the invention, Al is formed between the patterned substrate and the GaN layer(x)CU(1-x)Compared with an AlN buffer layer, the N buffer layer can obviously improve lattice stress between the substrate and the GaN layer and improve the performance of the LED device. And, due to Al(x)CU(1-x)The N buffer layer contains CuN, thereby making Al(x)CU(1-x)The N buffer layer has poor stability and is easily chemically corroded, so that Al can be removed(x)CU(1-x)The N buffer layer is used as a sacrificial layer when the substrate is stripped, and further Al can be used(x)CU(1-x)The N buffer layer is applied to the flip LED device.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a flowchart of a method for manufacturing an LED device according to an embodiment of the present invention;
FIG. 2 is a schematic top view of a patterned substrate according to an embodiment of the present invention;
FIG. 3 shows Al provided in the examples of the present invention(x)CU(1-x)The cross section structure schematic diagram of the N buffer layer;
fig. 4 is a schematic cross-sectional structure diagram of an LED device provided in an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a PVD sputtering apparatus according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, so that the above is the core idea of the present invention, and the above objects, features and advantages of the present invention can be more clearly understood. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment of the invention provides a manufacturing method of an LED device, which comprises the following steps of:
s101: providing a patterned substrate;
optionally, the patterned substrate is a patterned sapphire substrate. Of course, the invention is not limited thereto, and in other embodiments, the substrate may be a silicon substrate or the like.
Wherein, as shown in fig. 2, the substrate is composed of a non-pattern plane gap region with a bottom width of 0.3 ± 0.1um and a triangular pyramid with a bottom diameter of 2.7 ± 0.1um, wherein the substrate has a shape of 3um as a period.
S102: forming Al on the surface of the substrate(x)CU(1-x)N buffer layer;
specifically, Al is formed on the surface of the substrate(x)CU(1-x)The N buffer layer includes: al is formed on the surface of the substrate by using a CuAl alloy target material by adopting a PVD process(x)CU(1-x)And an N buffer layer.
As shown in fig. 3, Al with a thickness of 5nm to 100nm is uniformly sputtered on the surface of the patterned sapphire substrate 10 by a PVD process(x)CU(1-x)An N buffer layer 11. Prior artIn the process of manufacturing the AlN buffer layer, a high-purity aluminum target is used, while a high-purity copper-aluminum alloy target is used in the method, wherein the copper element in the copper-aluminum alloy target is 0-10%, so that the finally generated buffer layer is ternary Al(x)CU(1-x)N buffer layer, x is more than 0 and less than 1.
S103: in the Al(x)CU(1-x)And a GaN layer, an N-type GaN layer, a multi-quantum well layer, an electronic barrier layer, a P-type GaN layer, an ohmic contact layer, an N electrode and a P electrode are formed on the surface of the N buffer layer.
As shown in FIG. 4, Al is formed(x)CU(1-x)After N buffer layer 11, in Al(x)CU(1-x)And a GaN layer 12, an N-type GaN layer 13, a multi-quantum well layer 14, an electron barrier layer 15, a P-type GaN layer 16, an ohmic contact layer 17, an N electrode 18 and a P electrode 19 are formed on the surface of the N buffer layer 11, so that the whole growth process of the LED device is completed.
It should be noted that the LED device manufactured in the embodiment of the present invention may be a forward-mounted LED device, or a flip-chip LED device, and during the growth process of the flip-chip LED device, Al is further included(x)CU(1-x) N buffer layer 11 as sacrificial layer for Al(x)CU(1-x)The N buffer layer 11 is chemically etched, and the substrate 10 is peeled off, which will not be described herein.
According to the manufacturing method of the LED device, Al is formed between the patterned substrate and the GaN layer(x)CU(1-x)Compared with an AlN buffer layer, the N buffer layer can obviously improve lattice stress between the substrate and the GaN layer and improve the performance of the LED device. And, due to Al(x)CU(1-x)The N buffer layer contains CuN, thereby making Al(x)CU(1-x)The N buffer layer has poor stability and is easily chemically corroded, so that Al can be removed(x)CU(1-x)The N buffer layer is used as a sacrificial layer when the substrate is stripped, and further Al can be used(x)CU(1-x)The N buffer layer is applied to the flip LED device.
The embodiment of the invention also provides an LED device, as shown in FIG. 4, which includes a patterned substrate 10 and Al located on the surface of the substrate 10(x)CU(1-x) N buffer layer 11 and Al(x)CU(1-x) A GaN layer 12 on the surface of the N buffer layer 11, an N-type GaN layer 13, a multiple quantum well layer 14, an electron blocking layer 15, a P-type GaN layer 16, an ohmic contact layer 17, an N electrode 18 and a P electrode 19.
Wherein said Al is(x)CU(1-x)The N buffer layer 11 is formed on the surface of the substrate by using a CuAl alloy target material through a PVD process. In the prior art, a high-purity aluminum target is used when the AlN buffer layer is manufactured, and a high-purity copper-aluminum alloy target is used in the method, wherein the copper element in the copper-aluminum alloy target is 0-10%, so that the finally generated buffer layer is ternary Al(x)CU(1-x)N buffer layer, x is more than 0 and less than 1. Alternatively, Al(x)CU(1-x)The thickness of the N buffer layer 11 ranges from 5nm to 100 nm.
The LED device provided by the invention has the advantages that Al is formed between the patterned substrate and the GaN layer(x)CU(1-x)Compared with an AlN buffer layer, the N buffer layer can obviously improve lattice stress between the substrate and the GaN layer and improve the performance of the LED device. And, due to Al(x)CU(1-x)The N buffer layer contains CuN, thereby making Al(x)CU(1-x)The N buffer layer has poor stability and is easily chemically corroded, so that Al can be removed(x)CU(1-x)The N buffer layer is used as a sacrificial layer when the substrate is stripped, and further Al can be used(x)CU(1-x)The N buffer layer is applied to the flip LED device.
An embodiment of the present invention further provides a PVD sputtering apparatus, as shown in fig. 5, including a sputtering chamber 1, a controller coupled to the sputtering chamber 1, a sputtering target 3 disposed in the sputtering chamber 1, and a substrate support base 2 disposed opposite to the sputtering target 3, where a protective cover 4 is disposed on a surface of the sputtering target 3, and certainly, the PVD sputtering apparatus provided in the embodiment of the present invention further includes a gas flow meter 5, and details thereof are not repeated here.
In the embodiment of the present invention, the sputtering target 3 includes a CuAl alloy target, and the sputtering of the CuAl alloy target deposits Al on the substrate(x)CU(1-x)And an N buffer layer.
Specifically, the protective cover 4 needs to be removed before sputtering the sputtering target 3, and after sputtering is completed, the protective cover 4 needs to be attached to protect the sputtering target 3 from corrosion by water, oxygen and the like in the air through the protective cover 4, so that impurities in a thin film generated by sputtering can be avoided, and the quality of the thin film can be improved.
Optionally, an inert gas, such as argon, may be introduced into the shield 4 to further protect the sputtering target 3 from oxidation.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (9)

1. A method for manufacturing an LED device is characterized by comprising the following steps:
providing a patterned substrate;
forming Al on the surface of the substrate(x)Cu(1-x)N buffer layer;
in the Al(x)Cu(1-x)And a GaN layer, an N-type GaN layer, a multi-quantum well layer, an electronic barrier layer, a P-type GaN layer, an ohmic contact layer, an N electrode and a P electrode are formed on the surface of the N buffer layer, and x is more than 0 and less than 1.
2. According to the claimsThe method of claim 1, wherein Al is formed on the surface of the substrate(x)Cu(1-x)The N buffer layer includes:
forming Al on the surface of the substrate by using a CuAl alloy target material by adopting a PVD (physical vapor deposition) process(x)Cu(1-x)And an N buffer layer.
3. The method according to claim 2, wherein the Cu content in the CuAl alloy target material is between 0 and 10%.
4. The method of claim 1, wherein the Al is(x)Cu(1-x)The thickness range of the N buffer layer is 5 nm-100 nm.
5. The LED device is characterized by comprising a patterned substrate and Al positioned on the surface of the substrate(x)Cu(1-x)N buffer layer and Al(x)Cu(1-x)The GaN layer, the N-type GaN layer, the multi-quantum well layer, the electronic barrier layer, the P-type GaN layer, the ohmic contact layer, the N electrode and the P electrode are arranged on the surface of the N buffer layer, and x is more than 0 and less than 1.
6. The LED device of claim 5, wherein the Al is(x)Cu(1-x)The N buffer layer is formed on the surface of the substrate by using a CuAl alloy target material through a PVD process.
7. The LED device according to claim 6, wherein the Cu content in the CuAl alloy target material is between 0 and 10%.
8. The LED device of claim 5, wherein the Al is(x)Cu(1-x)The thickness range of the N buffer layer is 5 nm-100 nm.
9. The PVD sputtering equipment comprises a sputtering cavity, a controller coupled with the sputtering cavity, a sputtering target material arranged in the sputtering cavity, and a PVD sputtering deviceThe substrate supporting seat is characterized in that a protective cover is arranged on the surface of the sputtering target material, the sputtering target material comprises a CuAl alloy target material, and Al is deposited on the substrate by sputtering the CuAl alloy target material(x)Cu(1-x)N buffer layer, x is more than 0 and less than 1.
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