CN110211883B - Array substrate and preparation method thereof - Google Patents
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- CN110211883B CN110211883B CN201910435265.7A CN201910435265A CN110211883B CN 110211883 B CN110211883 B CN 110211883B CN 201910435265 A CN201910435265 A CN 201910435265A CN 110211883 B CN110211883 B CN 110211883B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/564—Details not otherwise provided for, e.g. protection against moisture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
Abstract
The application provides an array substrate and a preparation method thereof, wherein a layer of alkyl aluminum material liquid is formed on the surface of a substrate on which a thin film transistor is formed; the aluminum hydroxide material liquid and the water vapor generate chemical reaction to generate aluminum hydroxide and alkyl gas, the aluminum hydroxide is attached to the substrate to form an aluminum hydroxide film, and the alkyl gas is exhausted through an exhaust system of the reaction chamber; and then forming a silicon nitride film on the aluminum oxyhydroxide film so as to form a passivation layer of the composite structure of the aluminum oxyhydroxide film and the silicon nitride film. According to the method, the hydroxyl aluminum oxide film is adopted to replace a silicon dioxide film in a conventional passivation layer, so that the energy consumption and the cost are low, and the problem that the performance of a device is influenced when H elements enter an indium gallium zinc oxide semiconductor layer can be solved.
Description
Technical Field
The application relates to the technical field of display, in particular to an array substrate and a preparation method thereof.
Background
IGZO (indium gallium zinc oxide) is considered to be an ideal semiconductor layer material in the next generation TFT device because of its high carrier mobility. However, IGZO is unstable, and the IGZO thin film is deteriorated in performance due to contact with H2O, O2, and excessive doping of H element, so that the PV layer (passivation layer) of IGZO at present often adopts a double-layer structure of SiO2+ SiNx. The SiO2 film is prepared by CVD method; CVD film formation has some problems of expensive equipment, high energy consumption (vacuum pumping, heating) and the like. It is more worth mentioning that in the existing film forming process (SiH4+ N2O), the H element in silane easily enters into the IGZO film layer, thereby affecting the device performance.
Therefore, the prior art has defects and needs to be improved urgently.
Disclosure of Invention
The application provides an array substrate and a preparation method thereof, which can solve the problems that the energy consumption and the cost are high when a passivation layer is prepared on a substrate of an existing IGZO TFT, and H elements easily enter an IGZO film layer to influence the performance of a device.
In order to solve the above problems, the technical solution provided by the present application is as follows:
the application provides a preparation method of an array substrate, which comprises the following steps:
step S10, providing a substrate, preparing thin film transistors distributed in an array on the substrate, putting the substrate into a reaction chamber, and forming a layer of alkyl aluminum material liquid on the surface of the substrate;
step S20, the aluminum alkyl material liquid on the surface of the substrate and the water vapor in the air react chemically to generate aluminum oxyhydroxide and alkyl gas, the aluminum oxyhydroxide adheres to the substrate to form an aluminum oxyhydroxide thin film, and the alkyl gas is exhausted through the exhaust system of the reaction chamber;
step S30, removing the substrate with the aluminum oxyhydroxide thin film formed thereon from the reaction chamber, forming a silicon nitride thin film on the aluminum oxyhydroxide thin film, and forming a passivation layer on the aluminum oxyhydroxide thin film and the silicon nitride thin film.
In the preparation method, the thin film transistor comprises a grid electrode, a semiconductor layer and a source drain electrode, wherein the semiconductor layer is made of an indium gallium zinc oxide material and is in contact with the aluminum oxyhydroxide thin film.
In the preparation method of the present application, the step S10 specifically includes the following steps:
step S101, forming the patterned grid electrode on a substrate, sequentially preparing a grid insulating layer and an indium-gallium-zinc oxide layer on the grid electrode, patterning the indium-gallium-zinc oxide layer to form the semiconductor layer, and then conducting the conductor on the part of the semiconductor layer corresponding to the source electrode and the drain electrode.
In the preparation method of the present application, the alkylaluminum material liquid is formed on the substrate by coating or inkjet printing, and the alkylaluminum material liquid on the substrate is used to consume the water vapor remaining on the surface of the indium-gallium-zinc oxide material, and generates the aluminum oxyhydroxide and the alkyl gas after chemically reacting with the water vapor.
In the preparation method, the alkylaluminum material liquid contains one or more of trimethylaluminum and triethylaluminum.
In the preparation method of the present application, the step S20 specifically includes the following steps:
step S201, the alkyl aluminum material liquid on the surface of the substrate and the water vapor are chemically reacted to generate aluminum oxyhydroxide and methane gas and/or ethane gas, the aluminum oxyhydroxide is attached to the substrate to form an aluminum oxyhydroxide thin film, and the methane gas and/or the ethane gas are exhausted through an exhaust system of the reaction chamber.
In the preparation method, the reaction chamber further comprises an air inlet system, and a preset amount of water vapor is introduced into the reaction chamber through the air inlet system.
In the preparation method, the alkyl aluminum material liquid further includes one or more organic solvents selected from benzene, toluene and gasoline, so as to slow down the reaction rate of the alkyl aluminum material liquid and the water vapor.
In order to solve the above technical problem, the present application further provides an array substrate, including:
the thin film transistor array structure comprises a substrate base plate, wherein thin film transistors distributed in an array mode are arranged on the substrate base plate, each thin film transistor comprises a semiconductor layer, and the semiconductor layer is made of an indium gallium zinc oxide material;
the passivation layer is prepared on the thin film transistor and comprises a stacked hydroxy aluminum oxide thin film and a stacked silicon nitride thin film;
wherein the aluminum oxyhydroxide thin film is in contact with the semiconductor layer.
In the array substrate of the present application, the aluminum oxyhydroxide thin film is formed from an aluminum alkyl material liquid including one or more of trimethylaluminum and triethylaluminum.
The beneficial effect of this application does: compared with the passivation layer of the existing IGZO TFT substrate base plate, the aluminum hydroxide film is prepared by utilizing the characteristic that the aluminum hydroxide can rapidly react in the air to generate aluminum hydroxide and alkyl gas, so that the SiO2 film layer of the passivation layer in the common IGZO TFT device is replaced. By adopting the method, the whole chemical reaction process can be rapidly and effectively carried out, the energy consumption is low, and the residual water vapor on the surface of the IGZO (indium gallium zinc oxide) semiconductor layer can be consumed by the alkyl aluminum, so that the effects of water absorption and drying are achieved; meanwhile, the H element in the SiNx film layer can be isolated, and the performance stability of the IGZO semiconductor layer is maintained.
Drawings
In order to illustrate the embodiments or the technical solutions in the prior art more clearly, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the application, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a flowchart of a method for manufacturing an array substrate according to an embodiment of the present disclosure;
FIG. 2 is a schematic structural diagram of a reaction chamber provided in an embodiment of the present application;
fig. 3 is a schematic structural diagram of an array substrate according to an embodiment of the present disclosure.
Detailed Description
The following description of the various embodiments refers to the accompanying drawings, which are included to illustrate specific embodiments that can be implemented by the application. Directional phrases used in this application, such as [ upper ], [ lower ], [ front ], [ rear ], [ left ], [ right ], [ inner ], [ outer ], [ side ], etc., refer only to the directions of the attached drawings. Accordingly, the directional terminology is used for purposes of illustration and understanding, and is in no way limiting. In the drawings, elements having similar structures are denoted by the same reference numerals.
This application is higher to energy consumption and cost when the substrate base plate of current IGZO TFT prepares the passivation layer, and H element gets into the technical problem that influences device performance in the IGZO rete easily, and this defect can be solved to this embodiment.
Fig. 1 is a flowchart of a method for manufacturing an array substrate according to an embodiment of the present disclosure. In conjunction with fig. 2, the method comprises the steps of:
step S10, providing a substrate 10, where thin film transistors are prepared on the substrate 10 in an array, the thin film transistors include a gate, a semiconductor layer and a source/drain, where the material of the semiconductor layer includes but is not limited to an indium gallium zinc oxide material, placing the substrate 10 on a carrying table 203 of a reaction chamber 20, and forming a layer of alkyl aluminum material liquid on the surface of the substrate 10.
Specifically, the step S10 includes the steps of:
step S101, forming the patterned grid electrode on a substrate, sequentially preparing a grid insulating layer and an indium-gallium-zinc oxide layer on the grid electrode, patterning the indium-gallium-zinc oxide layer to form the semiconductor layer, then conducting the part of the semiconductor layer corresponding to the source electrode and the drain electrode, and forming a source region and a drain region on the semiconductor layer.
And sequentially preparing an interlayer insulating layer and a source drain metal layer on the semiconductor layer, and patterning the source drain metal layer to form the source drain which is electrically connected with the source region and the drain region.
Step S102, the alkyl aluminum material liquid is formed on the base substrate 10 by coating or inkjet printing.
In step S20, the aluminum alkyl material liquid on the surface of the substrate 10 chemically reacts with the water vapor in the air to generate aluminum oxyhydroxide attached to the substrate 10 to form an aluminum oxyhydroxide thin film 105 and an alkyl gas, and the alkyl gas is exhausted through the exhaust system 201 of the reaction chamber 20.
Specifically, the alkyl aluminum material liquid includes, but is not limited to, one or more of trimethyl aluminum and triethyl aluminum.
The alkyl aluminum material liquid also comprises one or more organic solvents of benzene, toluene and gasoline, which are used for diluting the alkyl aluminum material and slowing down the reaction speed of the alkyl aluminum material liquid and the water vapor.
The step S20 specifically includes the following steps:
step S201, the alkyl aluminum material liquid on the surface of the substrate base plate 10 chemically reacts with a small amount of water vapor to generate aluminum oxyhydroxide and methane gas and/or ethane gas, the aluminum oxyhydroxide is attached to the substrate base plate 10 to form an aluminum oxyhydroxide thin film 105, and the methane gas and/or the ethane gas are exhausted through the gas exhaust system 201 of the reaction chamber 20.
Wherein the reaction chemical formula of the trimethylaluminum and the water vapor is as follows:
Al(CH3)3+2H2O→AlOOH+3CH4
wherein, aluminum oxyhydroxide (AlOOH) is attached on the surface of the substrate 10 as a film layer, and methane gas (CH)4) Escaping as a by-product.
The reaction chemical formula of the triethyl aluminum and the water vapor is as follows:
Al(C2H5)3+2H2O→AlOOH+3C2H6
wherein, aluminum oxyhydroxide (AlOOH) is attached on the surface of the substrate 10 as a film layer, and ethane gas (C)2H6) Escaping as a by-product.
Since the aluminum oxyhydroxide thin film 105 is in contact with the semiconductor layer (IGZO), the water vapor remaining on the surface of the semiconductor layer can be consumed by the reaction of the aluminum alkyl material liquid, that is, the aluminum oxyhydroxide and the alkyl gas are generated after the chemical reaction of the aluminum alkyl material liquid and the water vapor, and the aluminum oxyhydroxide thin film and the alkyl gas perform the action of water absorption and drying.
In another embodiment, the reaction chamber 20 further comprises a gas inlet system 202, and a small amount of the water vapor is introduced into the reaction chamber 20 through the gas inlet system 202 to ensure that the aluminum alkyl material liquid can fully react to form a uniform aluminum oxyhydroxide thin film 105 on the substrate base plate 10.
Step S30, moving the substrate 10 with the aluminum oxyhydroxide thin film 105 out of the reaction chamber 20, forming a silicon nitride thin film on the aluminum oxyhydroxide thin film 105, wherein the aluminum oxyhydroxide thin film 105 and the silicon nitride thin film form a passivation layer.
Wherein, since the aluminum oxyhydroxide thin film 105 separates the semiconductor layer (IGZO) from the silicon nitride thin film, the aluminum oxyhydroxide thin film 105 can isolate H element in the silicon nitride thin film from entering the semiconductor layer, thereby maintaining the stability of the semiconductor layer performance.
The present application also provides an array substrate prepared by the above preparation method, as shown in fig. 3, the array substrate includes:
the thin film transistor structure comprises a substrate base plate 10, wherein thin film transistors distributed in an array mode are arranged on the substrate base plate 10, the thin film transistors comprise a grid electrode 101, a grid insulation layer 102 and a semiconductor layer 103, the grid electrode 101 is prepared on the grid electrode 101, the semiconductor layer 103 is prepared on the grid insulation layer 102, the semiconductor layer 103 is made of indium gallium zinc oxide materials, and source and drain electrodes 104 are connected with a conductor part of the semiconductor layer 103. A passivation layer 110 prepared on the thin film transistor, wherein the passivation layer 110 comprises a stacked aluminum oxyhydroxide thin film 105 and a stacked silicon nitride thin film 106; wherein the aluminum oxyhydroxide thin film 105 is in contact with the semiconductor layer 103. Due to the characteristics of the aluminum oxyhydroxide film 105, the H element in the silicon nitride film 106 can be prevented from penetrating into the semiconductor layer 103, thereby maintaining the stability of the performance of the semiconductor layer 103.
The aluminum oxyhydroxide thin film 105 is formed by an aluminum alkyl material liquid including one or more of trimethylaluminum and triethylaluminum, which is not described herein again with reference to the above embodiments.
In summary, the aluminum hydroxide film is prepared by utilizing the characteristic that the aluminum alkyl can rapidly react in the air to generate aluminum hydroxide and alkyl gas, so that the common SiO2 film layer of the passivation layer in the IGZO TFT device is replaced. By adopting the method, the whole chemical reaction process can be rapidly and effectively carried out, the energy consumption is low, and the residual water vapor on the surface of the IGZO (indium gallium zinc oxide) semiconductor layer can be consumed by the alkyl aluminum, so that the effects of water absorption and drying are achieved; meanwhile, the H element in the SiNx film layer can be isolated, and the performance stability of the IGZO semiconductor layer is maintained.
In summary, although the present application has been described with reference to the preferred embodiments, the above-described preferred embodiments are not intended to limit the present application, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present application, so that the scope of the present application shall be determined by the appended claims.
Claims (9)
1. A preparation method of an array substrate is characterized by comprising the following steps:
step S10, providing a substrate, preparing thin film transistors distributed in an array on the substrate, wherein the thin film transistors comprise a grid electrode, a semiconductor layer and a source drain electrode, the semiconductor layer is made of an indium gallium zinc oxide material, placing the substrate into a reaction chamber, and forming a layer of alkyl aluminum material liquid on the surface of the substrate;
step S20, the aluminum alkyl material liquid on the surface of the substrate and the water vapor in the air react chemically to generate aluminum oxyhydroxide and alkyl gas, the aluminum oxyhydroxide is attached to the substrate to form an aluminum oxyhydroxide thin film, the aluminum oxyhydroxide thin film is in contact with the semiconductor layer, and the alkyl gas is exhausted through the exhaust system of the reaction chamber;
step S30, removing the substrate with the aluminum oxyhydroxide thin film formed thereon from the reaction chamber, forming a silicon nitride thin film on the aluminum oxyhydroxide thin film, and forming a passivation layer on the aluminum oxyhydroxide thin film and the silicon nitride thin film.
2. The preparation method according to claim 1, wherein the step S10 specifically comprises the steps of:
step S101, forming the patterned grid electrode on a substrate, sequentially preparing a grid insulating layer and an indium-gallium-zinc oxide layer on the grid electrode, patterning the indium-gallium-zinc oxide layer to form the semiconductor layer, and then conducting the conductor on the part of the semiconductor layer corresponding to the source electrode and the drain electrode.
3. The method according to claim 1, wherein the aluminum alkyl material liquid is formed on the substrate by coating or inkjet printing, and the aluminum alkyl material liquid on the substrate is used to consume the water vapor remaining on the surface of the indium gallium zinc oxide material and chemically reacts with the water vapor to generate the aluminum oxyhydroxide and the alkyl gas.
4. The method according to claim 1, wherein the alkylaluminum material liquid contains one or more of trimethylaluminum and triethylaluminum.
5. The preparation method according to claim 4, wherein the step S20 specifically comprises the steps of:
step S201, the alkyl aluminum material liquid on the surface of the substrate and the water vapor are chemically reacted to generate aluminum oxyhydroxide and methane gas and/or ethane gas, the aluminum oxyhydroxide is attached to the substrate to form an aluminum oxyhydroxide thin film, and the methane gas and/or the ethane gas are exhausted through an exhaust system of the reaction chamber.
6. The method as claimed in claim 1, wherein the reaction chamber further comprises a gas inlet system, and a predetermined amount of the water vapor is introduced into the reaction chamber through the gas inlet system.
7. The method as claimed in claim 1, wherein the aluminum alkyl material liquid further comprises one or more organic solvents selected from benzene, toluene and gasoline to slow down the reaction between the aluminum alkyl material liquid and the water vapor.
8. An array substrate, comprising:
the thin film transistor array structure comprises a substrate base plate, wherein thin film transistors distributed in an array mode are arranged on the substrate base plate, each thin film transistor comprises a grid electrode, a semiconductor layer and a source drain electrode, and the semiconductor layer is made of an indium gallium zinc oxide material;
the passivation layer is prepared on the thin film transistor and comprises a stacked hydroxy aluminum oxide thin film and a stacked silicon nitride thin film;
the aluminum hydroxide film is in contact with the semiconductor layer, and is formed by chemical reaction of alkyl aluminum material liquid prepared on the substrate and water vapor in the air.
9. The array substrate of claim 8, wherein the alkyl aluminum material liquid comprises one or more of trimethyl aluminum and triethyl aluminum.
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| CN102420183A (en) * | 2011-12-07 | 2012-04-18 | 深圳市华星光电技术有限公司 | Manufacturing method of TFT (Thin Film Transistor) array substrate and TFT array substrate |
| CN102593065A (en) * | 2012-03-14 | 2012-07-18 | 复旦大学 | Preparation method for backgate thin film transistor storage |
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| FR2312117A1 (en) * | 1975-05-19 | 1976-12-17 | Nat Semiconductor Corp | PROCESS FOR PASSIVATION OF ALUMINUM LAYERS ON SEMICONDUCTOR ELEMENTS |
| KR100544126B1 (en) * | 2003-08-26 | 2006-01-23 | 삼성에스디아이 주식회사 | Organic electroluminescence device and manufacturing method thereof |
| KR20150033155A (en) * | 2013-09-23 | 2015-04-01 | 삼성디스플레이 주식회사 | Thin film transistor and method of the same |
| CN106935512B (en) * | 2017-05-11 | 2020-03-31 | 京东方科技集团股份有限公司 | Metal oxide thin film transistor, array substrate, manufacturing method and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102420183A (en) * | 2011-12-07 | 2012-04-18 | 深圳市华星光电技术有限公司 | Manufacturing method of TFT (Thin Film Transistor) array substrate and TFT array substrate |
| CN102593065A (en) * | 2012-03-14 | 2012-07-18 | 复旦大学 | Preparation method for backgate thin film transistor storage |
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Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee after: TCL Huaxing Photoelectric Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |