CN110209010B - Semi-transparent mask plate - Google Patents
Semi-transparent mask plate Download PDFInfo
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- CN110209010B CN110209010B CN201910440026.0A CN201910440026A CN110209010B CN 110209010 B CN110209010 B CN 110209010B CN 201910440026 A CN201910440026 A CN 201910440026A CN 110209010 B CN110209010 B CN 110209010B
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
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Abstract
The invention provides a semi-transparent mask plate, which comprises a light transmitting area, a shading area and a semi-light transmitting area, wherein a spectrum modulation layer is arranged on a substrate positioned in the semi-light transmitting area, is doped with a specific rare earth complex, and can convert light rays positioned in a first wavelength range in exposure irradiation light rays into light rays in a second wavelength range which can not excite light resistance to react. Therefore, the attenuation of the exposure irradiation energy of the semi-transparent area is realized, the semi-transparent effect is achieved, different light wave conversion rates can be achieved by adjusting the variety of the rare earth complex, the doping density, the thickness of the spectrum modulation layer and other influence factors, and the control of different photoresist layer thicknesses is realized. The semi-transparent mask plate provided by the invention has the advantages of accurate and controllable semi-mask effect, simple process and low cost, and solves the problems of complex preparation process and high cost of the existing semi-transparent mask plate.
Description
Technical Field
The invention relates to the field of display preparation, in particular to a semi-transparent mask.
Background
The semi-transparent mask plate has the characteristics of light tightness, total light permeability and semi-light permeability, so that the exposure and development times can be reduced in the patterning process, the preparation procedure is simplified, and the semi-transparent mask plate is widely applied to the field of preparation of display devices.
However, due to the existence of the semi-transparent region, especially the existence of the climbing region at the junction of the semi-transparent region and the opaque region, the design and manufacturing process of the semi-transparent mask plate is difficult, and the manufacturing cost is high.
Therefore, the problems of complex preparation process and high cost of the existing semi-transparent mask are to be solved.
Disclosure of Invention
The invention provides a semi-transparent mask plate, which is used for solving the problems of complex preparation process and high cost of the existing semi-transparent mask plate.
In order to solve the above problems, the technical scheme provided by the invention is as follows:
the invention provides a semi-transparent mask plate which is used for etching light resistance and comprises a light transmitting area, a shading area and a semi-light transmitting area, and is characterized by comprising the following components:
a substrate;
a light shielding layer disposed on the substrate and in the light shielding region;
the spectrum modulation layer is arranged on the substrate and positioned in the semi-light-transmitting area and used for converting light rays in a first wavelength range in exposure irradiation light rays into light rays in a second wavelength range, and the light rays in the second wavelength range cannot excite the photoresistance to react.
In the semi-transparent mask provided by the invention, the spectrum modulation layer is a transparent film doped with a rare earth complex.
In the semi-transparent mask provided by the invention, the doping parameters of the rare earth complex at different positions are different in the spectrum modulation layer.
In the semi-transparent mask provided by the invention, the doping densities of the rare earth complexes at different positions are different.
In the semi-transparent mask provided by the invention, the doping density of the rare earth complex decreases from two sides of the spectrum modulation layer to the middle of the spectrum modulation layer.
In the semi-transparent mask provided by the invention, the doping density of the rare earth complex increases progressively from two sides of the spectrum modulation layer to the middle of the spectrum modulation layer.
In the semi-transparent mask provided by the invention, the thicknesses of the spectrum modulation layers at least two positions in the spectrum modulation layer are different.
In the semi-transparent mask provided by the invention, the thickness of the spectrum modulation layer is gradually reduced from two sides of the spectrum modulation layer to the middle of the spectrum modulation layer.
In the semi-transparent mask provided by the invention, the thickness of the spectrum modulation layer increases from two sides of the spectrum modulation layer to the middle of the spectrum modulation layer.
In the semi-transparent mask provided by the invention, the spectrum modulation layer partially covers the light shielding layer.
The invention has the beneficial effects that: the invention provides a semi-transparent mask plate, which comprises a light transmitting area, a shading area and a semi-light transmitting area, wherein a spectrum modulation layer is arranged on a substrate positioned in the semi-light transmitting area, is doped with a specific rare earth complex, and can convert light rays positioned in a first wavelength range in exposure irradiation light rays into light rays in a second wavelength range which can not excite light resistance to react. Therefore, the attenuation of the exposure irradiation energy of the semi-transparent area is realized, the semi-transparent effect is achieved, different light wave conversion rates can be achieved by adjusting the variety of the rare earth complex, the doping density, the thickness of the spectrum modulation layer and other influence factors, and the control of different photoresist layer thicknesses is realized. The semi-transparent mask plate provided by the invention has the advantages of accurate and controllable semi-mask effect, simple process and low cost, and solves the problems of complex preparation process and high cost of the existing semi-transparent mask plate.
Drawings
In order to illustrate the embodiments or the technical solutions in the prior art more clearly, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the invention, and it is obvious for a person skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a first structure of a semi-transparent mask according to an embodiment of the present invention.
Fig. 2(a) is a schematic diagram of a first effect of a semi-transparent mask plate with a first structure according to an embodiment of the present invention.
Fig. 2(b) is a schematic diagram of a second effect of the semi-transparent mask plate with the first structure according to the embodiment of the present invention.
Fig. 3(a) is a schematic diagram of a second structure of a semi-transparent mask according to an embodiment of the present invention.
Fig. 3(b) is a schematic diagram of an effect of a semi-transparent mask plate with a second structure according to an embodiment of the present invention.
Fig. 4(a) is a schematic view of a third structure of a semi-transparent mask according to an embodiment of the present invention.
Fig. 4(b) is a schematic diagram of an effect of a semi-transparent mask plate with a third structure according to an embodiment of the present invention.
Fig. 5 is a schematic diagram of a fourth structure of the semi-transparent mask according to the embodiment of the present invention.
Fig. 6(a) is a schematic diagram of a first effect of a semi-transparent mask plate with a fourth structure according to an embodiment of the present invention.
Fig. 6(b) is a schematic diagram of a second effect of a semi-transparent mask plate with a fourth structure according to an embodiment of the present invention.
Fig. 7(a) is a schematic diagram of a fifth structure of a semi-transparent mask according to an embodiment of the present invention.
Fig. 7(b) is a schematic diagram of an effect of a semi-transparent mask plate with a fifth structure according to an embodiment of the present invention.
Fig. 8(a) is a schematic diagram of a sixth structure of a semi-transmissive mask according to an embodiment of the present invention.
Fig. 8(b) is a schematic effect diagram of a semi-transparent mask with a sixth structure according to an embodiment of the present invention.
Fig. 9 is a schematic diagram of a seventh structure of a semi-transparent mask according to an embodiment of the present invention.
Fig. 10(a) is a schematic diagram of a first effect of a semi-transparent mask with a seventh structure according to an embodiment of the present invention.
Fig. 10(b) is a schematic diagram of a second effect of the semi-transmissive mask with the seventh structure according to the embodiment of the present invention.
Fig. 11(a) is a schematic diagram of an eighth structure of a semi-transmissive mask according to an embodiment of the present invention.
Fig. 11(b) is a schematic effect diagram of a semi-transparent mask with an eighth structure according to an embodiment of the present invention.
Fig. 12(a) is a schematic diagram of a ninth structure of a semi-transmissive mask according to an embodiment of the present invention.
Fig. 12(b) is a schematic diagram of an effect of the semi-transmissive mask with the ninth structure according to the embodiment of the present invention.
Detailed Description
While the embodiments and/or examples of the present invention will be described in detail and fully with reference to the specific embodiments thereof, it should be understood that the embodiments and/or examples described below are only a part of the embodiments and/or examples of the present invention and are not intended to limit the scope of the invention. All other embodiments and/or examples, which can be obtained by a person skilled in the art without making any inventive step, based on the embodiments and/or examples of the present invention, belong to the scope of protection of the present invention.
Directional terms used in the present invention, such as [ upper ], [ lower ], [ left ], [ right ], [ front ], [ rear ], [ inner ], [ outer ], [ side ], are only referring to the directions of the attached drawings. Accordingly, the directional terminology is used for the purpose of describing and understanding the invention and is in no way limiting. The terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature.
Aiming at the problems of complex preparation process and high cost of the existing semi-transparent mask, the invention provides the semi-transparent mask which can relieve the problem.
In an embodiment, as shown in fig. 1, a semi-transparent mask 10 provided by the present invention includes a light-transmitting region 1, a light-shielding region 2, and a semi-light-transmitting region 3; the semi-transparent mask 10 includes:
the substrate 101, the substrate 101 may be one of soda lime glass, quartz glass or borosilicate glass, or any other transparent material.
A light-shielding layer 102 disposed on the substrate 101 and located in the light-shielding region 2 for blocking exposure light; the light shielding layer 102 is an opaque metal material layer or other opaque material layer.
The spectrum modulation layer 103 is disposed on the substrate 101 and located in the semi-transparent region 3, and is configured to convert light rays in a first wavelength range in the exposure illumination light rays into light rays in a second wavelength range, where the light rays in the second wavelength range cannot excite the photoresist to react. The spectrum modulation layer 103 is a rare earth complex doped transparent thin film, wherein the rare earth complex refers to a complex composed of rare earth central ions and ionic ligands, and the ionic ligands refer to one or more of yttrium (Y), scandium (Sc), and 15-clock lanthanide elements such as lanthanum (La), cerium (Ce), and the like. The rare earth complex doping in the spectrum modulation layer 103 may be single rare earth complex doping, or two, three or more rare earth complexes co-doping.
The spectral modulation layer 103 converts light rays within a first wavelength range in the exposure illumination light rays into light rays within a second wavelength range that cannot excite the photoresist to react, and the principle is as follows: when exposure irradiation light irradiates a rare earth complex with a specific ligand and central ions, the ligand with a specific wavelength absorption coefficient absorbs light energy of the light with the specific wavelength and transmits the energy to the rare earth central ions, the rare earth central ions are excited after receiving the energy from the ligand, electrons in the rare earth central ions are transited from a ground state to an excited state, the electrons in the excited state are unstable and need to return to a state with lower energy, so that the energy can be released in the form of photons to generate fluorescence, namely, a photoluminescence reaction is generated; the rare earth complex is photoluminescence, and emitted light is long-wave light which cannot excite photoresistance reaction, so that conversion of light with a specific wavelength part in exposure irradiation light to long-wave light is realized. The photoluminescence of the rare earth solid complex can realize the near infrared light conversion from ultraviolet-visible light (300-.
When the exposure irradiation light irradiates the light-transmitting area, the exposure irradiation light is not blocked at all and completely passes through the semi-transparent mask plate to reach the light resistor, the light resistor in the corresponding area is exposed and developed, at the moment, the intensity of the exposure irradiation light received by the light resistor in the corresponding area is strongest, and the light resistor is almost completely reacted and removed.
When the exposure irradiation light irradiates the shading area 2, the exposure irradiation light is completely blocked by the shading layer 102, the exposure irradiation light cannot penetrate the shading layer 102 and cannot reach the photoresist, the intensity of the exposure irradiation light received by the photoresist in the corresponding area is almost zero, and almost all the photoresist is reserved.
When the exposure irradiation light irradiates the semi-transparent area 3, the specific rare earth complex in the spectrum modulation layer 103 converts the light of the specific wavelength part in the exposure irradiation light to be long-wave light which can not excite the photoresist reaction, so that only part of the exposure irradiation light smoothly passes through the spectrum modulation layer 103 to reach the photoresist, and the photoresist in the corresponding area is exposed and developed, at the moment, the intensity of the exposure irradiation light received by the photoresist in the corresponding area is weakened, but part of energy is still reserved, the reaction of the photoresist part is removed, and the rest of the photoresist is reserved.
The invention provides a semi-transparent mask plate, which converts light rays in a first wavelength range in exposure irradiation light rays into light rays in a second wavelength range which can not excite a light resistance to react through a rare earth complex in a spectrum modulation layer. Therefore, the attenuation of the exposure irradiation energy of the semi-transparent area is realized, the semi-transparent effect is achieved, different light wave conversion rates can be achieved by adjusting the variety of the rare earth complex, the doping density, the thickness of the spectrum modulation layer and other influence factors, and the control of different photoresist layer thicknesses is realized. The semi-transparent mask plate provided by the invention has the advantages of accurate and controllable semi-mask effect, simple process and low cost, and solves the problems of complex preparation process and high cost of the existing semi-transparent mask plate.
In the semi-transparent mask of the present invention, the conversion effect of the spectrum modulation layer 103 on the exposure light is related to the type of the rare earth complex in the spectrum modulation layer 103, the doping density of the rare earth complex, and the thickness of the spectrum modulation layer 103, and the semi-transparent mask 10 of the present invention will be further explained with reference to the specific embodiment.
In an embodiment, the semi-transparent regions 3 are located between the light-shielding regions 2, as shown in fig. 1, the thicknesses of the spectrum modulation layers 103 are uniform and consistent, and partially cover the light-shielding layers 102, and the thicknesses thereof are designed with reference to the thickness of the photomask pattern layer, and are set according to the preset light intensity requirement, generally ranging from 0.01 mm to 0.2mm, which may be the same as the thicknesses of the light-shielding layers 102 as shown in fig. 1, may also be larger than the thicknesses of the light-shielding layers 102, and may also be smaller than the thicknesses of the light-shielding layers 102; in the spectrum modulation layer 103, the doping density of the rare earth complex in the middle region is smaller than that of the rare earth complex in the edge region, the doping density of the rare earth complex in the edge region decreases progressively in the direction away from the middle region, the doping density of the rare earth complex at the joint of the edge region and the middle region continuously increases, and the doping density of the rare earth complex in the middle region may be the same or may decrease progressively in the direction away from the center of the spectrum modulation layer. The doping quality of the rare earth complex in the spectrum modulation layer accounts for 5-70%.
As shown in (a) and (b) of fig. 2, when the semi-transparent mask plate 10 described in this embodiment is used to perform exposure development on the photoresist on the substrate 201, the exposure irradiation light 30 is irradiated onto the semi-transparent mask plate 10, and the exposure intensity of the exposure irradiation light from the semi-transparent mask plate 10 is shown as an intensity curve 40, so as to finally obtain the patterned photoresist layer 202.
In the spectrum modulation layer 103, when the doping density of the rare earth complex located in the middle region is the same and the doping density of the rare earth complex in the edge region linearly decreases in a direction away from the middle region, as shown in fig. 2 (a). In the spectrum modulation layer 103, the doping densities of the rare earth complexes in the middle region are the same, and the doping densities of the rare earth complexes in the edge regions are linearly decreased in the direction away from the middle region, so that the exposure light intensity of the exposure irradiation light 30 passing through the spectrum modulation layer 103 is shown by an intensity curve 40, the exposure intensity in the middle region is the same and strongest, and the exposure intensity in the edge regions is linearly decreased in the direction away from the middle region; the ratio of the light resistance reaction to be eliminated is that the middle area is the largest, the edge area is gradually reduced in the direction far away from the middle area and is finally the same as the corresponding area of the light shielding layer, the patterned light resistance layer 202 is finally obtained, the thickness of the light resistance layer in the area corresponding to the light shielding layer 102 is the same and the largest, the thickness of the light resistance layer in the middle area is the same and the smallest in the area corresponding to the spectrum modulation layer 103, the thickness of the light resistance layer in the edge area is linearly increased in the direction far away from the middle area, and finally the thickness of the light resistance in the area corresponding to the light shielding. Two different photoresist film layer thicknesses are obtained, and the slow transition between different film layer thicknesses is realized.
When the doping density of the rare earth complex in the spectrum modulation layer 103 decreases in a circular arc shape in a direction away from the center of the spectrum modulation layer 103, as shown in fig. 2 (b). Because the doping density of the rare earth complex in the spectrum modulation layer 103 decreases in a circular arc shape in the direction away from the center of the spectrum modulation layer 103, the exposure light intensity of the exposure irradiation light 30 after passing through the spectrum modulation layer 103 is shown by an intensity curve 40, the exposure light intensity decreases in a circular arc shape, the exposure intensity in the center area is strongest, and the exposure intensity in the edge area is weakest; the ratio of the light resistance reaction to be eliminated is that the middle area is the largest, the edge area is gradually reduced in the direction far away from the central area and is finally the same as the corresponding area of the light shielding layer, and finally the patterned light resistance layer 202 is obtained, the thickness of the light resistance layer in the area corresponding to the light shielding layer 102 is the same and the largest, the thickness of the light resistance layer in the central area is the smallest in the area corresponding to the spectrum modulation layer 103, the thickness of the light resistance layer in the edge area is increased in an arc shape in the direction far away from the central area, and finally the thickness of the light resistance layer in the area corresponding to. Different photoresist film layer thicknesses are obtained, and meanwhile, slow transition between different film layer thicknesses is achieved.
When the thicknesses of the spectrum modulation layer 103 are consistent, different thicknesses and shapes of the photoresist layer 202 can be realized by controlling the doping densities of the rare earth complexes at different positions in the spectrum modulation layer 103.
In another embodiment, the semi-transparent regions 3 are located between the light-shielding regions 2, as shown in fig. 3(a), the doping density of the rare earth complex in the spectrum modulation layer 103 is the same, and the doping content of the rare earth complex in the spectrum modulation layer is 5% -70%; in the spectrum modulation layer 103, the thickness of the film layer in the middle area is the same, the thickness of the edge area is larger than that of the middle area, the thickness increases linearly in the direction far away from the middle area, and the thickness of the joint of the edge area and the middle area is continuously excessive; the thickness of the spectral modulation layer 103 is designed with reference to the thickness of the photomask pattern layer, and is set according to the preset light intensity requirement, and the general range is 0.01-0.2 mm.
As shown in fig. 3(b), when the semi-transparent mask described in this embodiment is used to expose and develop the photoresist on the substrate 201, the exposure intensity of the exposure irradiation light 30 after passing through the spectrum modulation layer 103 is shown by an intensity curve 40, the exposure intensity of the middle region is the same and strongest, and the exposure intensity of the edge region decreases linearly in the direction away from the middle region; the ratio of eliminating the photoresistance reaction is the maximum in the middle area, and the edge area is gradually reduced in the direction far away from the middle area and is finally the same as the corresponding area of the light shielding layer; finally, the patterned photoresist layer 202 is obtained, the thickness of the photoresist layer in the region corresponding to the light shielding layer 102 is the same and the largest, the thickness of the photoresist layer in the middle region is the same and the smallest in the region corresponding to the spectrum modulation layer 103, the thickness of the photoresist layer in the edge region increases linearly in the direction away from the middle region, and finally the thickness of the photoresist layer in the region corresponding to the light shielding layer is the same. Two different photoresist film layer thicknesses are obtained, and the slow transition between different film layer thicknesses is realized.
In another embodiment, the semi-transparent regions 3 are located between the light-shielding regions 2, as shown in fig. 4(a), the doping density of the rare earth complex in the spectrum modulation layer 103 is the same, and the doping content of the rare earth complex in the spectrum modulation layer is 5% to 70%; the thickness of the spectrum modulation layer 103 increases in a circular arc shape in a direction away from the center of the spectrum modulation layer 103, and is finally the same as the thickness of the light shielding layer 102; the thickness of the spectral modulation layer 103 is designed with reference to the thickness of the photomask pattern layer, and is set according to the preset light intensity requirement, and the general range is 0.01-0.2 mm.
As shown in fig. 4(b), when the semi-transparent mask described in this embodiment is used to expose and develop the photoresist on the substrate 201, the exposure intensity of the exposure irradiation light 30 after passing through the spectrum modulation layer 103 is shown by an intensity curve 40, the exposure intensity decreases in a circular arc shape, the exposure intensity in the central region is strongest, and the exposure intensity in the edge region is weakest; the ratio of the light resistance reaction to be eliminated is that the middle area is the largest, the edge area is gradually reduced in the direction far away from the central area and is finally the same as the corresponding area of the light shielding layer, and finally the patterned light resistance layer 202 is obtained, the thickness of the light resistance layer in the area corresponding to the light shielding layer 102 is the same and the largest, the thickness of the light resistance layer in the central area is the smallest in the area corresponding to the spectrum modulation layer 103, the thickness of the light resistance layer in the edge area is increased in an arc shape in the direction far away from the central area, and finally the thickness of the light resistance layer in the area corresponding to. Different photoresist film layer thicknesses are obtained, and meanwhile, slow transition between different film layer thicknesses is achieved.
When the doping density of the rare earth complex in the spectrum modulation layer 103 is consistent, different thicknesses and shapes of the photoresist layer 202 can be realized by controlling the thicknesses of different positions of the spectrum modulation layer 103.
In an embodiment, the semi-transparent regions 3 are located between the transparent regions 1, as shown in fig. 5, the thicknesses of the spectrum modulation layers 103 are uniform and consistent, and the thicknesses thereof are designed with reference to the thickness of the mask pattern layer, and are set according to the preset light intensity requirement, generally range from 0.01 mm to 0.2mm, and may be the same as the thickness of the light shielding layer 102, or may be larger than the thickness of the light shielding layer 102, or may be smaller than the thickness of the light shielding layer 102, as shown in fig. 5; in the spectrum modulation layer 103, the doping density of the rare earth complex in the middle region is less than that of the rare earth complex in the edge region, the doping density of the rare earth complex in the edge region increases gradually in the direction away from the middle region, the doping density of the rare earth complex at the joint of the edge region and the middle region is continuously excessive, and the doping density of the rare earth complex in the middle region may be the same or may decrease gradually in the direction away from the center of the spectrum modulation layer. The doping quality of the rare earth complex in the spectrum modulation layer accounts for 5-70%.
As shown in (a) and (b) of fig. 6, when the semi-transparent mask described in this embodiment is used to expose and develop the photoresist on the substrate 201, the exposure irradiation light 30 irradiates the semi-transparent mask, and the exposure intensity of the exposure irradiation light from the semi-transparent mask is shown as an intensity curve 40, so as to finally obtain the patterned photoresist layer 202.
In the spectrum modulation layer 103, when the doping density of the rare earth complex located in the middle region is the same and the doping density of the rare earth complex in the edge region is linearly increased in a direction away from the middle region, as shown in (a) of fig. 6. Because the doping density of the rare earth complexes in the middle region is the same and the doping density of the rare earth complexes in the edge region increases linearly in the direction away from the middle region in the spectrum modulation layer 103, the exposure intensity of the exposure light 30 after passing through the spectrum modulation layer 103 is shown by an intensity curve 40, the exposure intensity in the middle region is the same and weakest, and the exposure intensity in the edge region increases linearly in the direction away from the middle region; the ratio of the photoresist reaction to be eliminated is the minimum in the middle area, the edge area is gradually increased in the direction far away from the middle area, and finally the patterned photoresist layer 202 is obtained, the photoresist in the area corresponding to the light-transmitting area 1 is eliminated, the thickness of the photoresist layer in the middle area is the same and the maximum in the area corresponding to the spectrum modulation layer 103, the thickness of the photoresist layer in the edge area is linearly decreased in the direction far away from the middle area, and finally the contact position of the photoresist layer in the area corresponding to the light-transmitting area is the same. A photoresist layer 202 with a certain film thickness is obtained, and the slow transition of the material region and the blank region is realized.
When the doping density of the rare earth complex in the spectral modulation layer 103 increases in a circular arc shape in a direction away from the center of the spectral modulation layer 103, as shown in fig. 6 (b). Because the doping density of the rare earth complex in the spectrum modulation layer 103 increases in a circular arc shape in the direction away from the center of the spectrum modulation layer 103, the exposure light intensity of the exposure light 30 after passing through the spectrum modulation layer 103 is shown by an intensity curve 40, the exposure light intensity increases in a circular arc shape, the exposure intensity in the center region is weakest, and the exposure intensity in the edge region is strongest; the ratio of the photoresist reaction to be eliminated is the minimum in the middle area, the edge area is gradually increased in the direction far away from the center area, and finally the patterned photoresist layer 202 is obtained, the photoresist in the area corresponding to the light-transmitting area 1 is eliminated, the thickness of the photoresist layer in the center area is the maximum in the area corresponding to the spectrum modulation layer 103, the thickness of the photoresist layer in the edge area is gradually decreased in the arc shape far away from the middle area, and finally the thickness of the contact part of the photoresist layer in the edge area and the area corresponding to the light-transmitting area 1 is the same. A photoresist layer 202 with a certain film thickness is obtained, and the slow transition of the material region and the blank region is realized.
In another embodiment, the semi-transparent regions 3 are located between the transparent regions 1, as shown in fig. 7(a), the doping density of the rare earth complex in the spectrum modulation layer 103 is the same, and the doping content of the rare earth complex in the spectrum modulation layer is 5% -70%; in the spectrum modulation layer 103, the thickness of the film layer in the middle area is the same, the thickness of the edge area is smaller than that of the middle area, the thickness decreases linearly in the direction far away from the middle area, and the thickness of the joint of the edge area and the middle area is continuously excessive; the thickness of the spectral modulation layer 103 is designed with reference to the thickness of the photomask pattern layer, and is set according to the preset light intensity requirement, and the general range is 0.01-0.2 mm.
As shown in fig. 7(b), when the semi-transparent mask described in this embodiment is used to expose and develop the photoresist on the substrate 201, the exposure intensity of the exposure irradiation light 30 after passing through the spectrum modulation layer 103 is shown by the intensity curve 40, the exposure intensity of the middle region is the same and weakest, and the exposure intensity of the edge region increases linearly in the direction away from the middle region; the ratio of the photoresist reaction to be eliminated is the minimum in the middle area, the edge area gradually increases in the direction far away from the middle area and is finally the same as the area corresponding to the light-transmitting area 1, the patterned photoresist layer 202 is finally obtained, the photoresist in the area corresponding to the light-transmitting area 1 is eliminated, the thickness of the photoresist layer in the middle area is the same and the maximum in the area corresponding to the spectrum modulation layer 103, the thickness of the photoresist layer in the edge area linearly decreases in the direction far away from the middle area, and the thickness of the photoresist layer in the edge area is finally the same at the contact position with the area corresponding to the light-transmitting area. A photoresist layer 202 with a certain film thickness is obtained, and the slow transition of the material region and the blank region is realized.
In still another embodiment, the semi-transmissive regions 3 are located between the transmissive regions 1, as shown in fig. 8(a), the doping density of the rare earth complex in the spectrum modulation layer 103 is the same, and the doping amount of the rare earth complex in the spectrum modulation layer is 5% to 70%; in the spectral modulation layer 103, the thickness of the edge region is greater than that of the middle region, and the thickness decreases in an arc in a direction away from the central region of the spectral modulation layer 103; the thickness of the spectral modulation layer 103 is designed with reference to the thickness of the photomask pattern layer, and is set according to the preset light intensity requirement, and the general range is 0.01-0.2 mm.
As shown in fig. 8(b), when the semi-transparent mask described in this embodiment is used to expose and develop the photoresist on the substrate 201, the exposure intensity of the exposure irradiation light 30 after passing through the spectrum modulation layer 103 is shown by an intensity curve 40, the exposure intensity increases in a circular arc shape, the exposure intensity in the central region is the weakest, and the exposure intensity in the edge region is the strongest; the ratio of the photoresist reaction to be eliminated is the minimum in the middle area, the edge area is gradually increased in the direction far away from the center area and is finally the same as the area corresponding to the light-transmitting area 1, the patterned photoresist layer 202 is finally obtained, the photoresist in the area corresponding to the light-transmitting area 1 is eliminated, the thickness of the photoresist layer in the center area is the maximum in the area corresponding to the spectrum modulation layer 103, the thickness of the photoresist layer in the edge area is gradually decreased in the arc shape in the direction far away from the middle area, and finally the thickness of the contact part of the photoresist layer in the edge area and the area corresponding to the light-transmitting. A photoresist layer 202 with a certain film thickness is obtained, and the slow transition of the material region and the blank region is realized.
In an embodiment, the semi-transparent region 3 is located between the transparent region 1 and the shading region 2, as shown in fig. 9, the thickness of the spectrum modulation layer 103 is uniform and consistent, the thickness thereof is designed with reference to the thickness of the pattern layer of the photomask, and is set according to the preset light intensity requirement, generally ranging from 0.01 mm to 0.2mm, and may be the same as the thickness of the shading layer 102, or larger than the thickness of the shading layer 102, or smaller than the thickness of the shading layer 102, as shown in fig. 9; in the spectrum modulation layer 103, the doping density of the rare earth complex increases in a direction close to the light shielding layer 102 and decreases in a direction close to the light transmitting region 1. The doping quality of the rare earth complex in the spectrum modulation layer accounts for 5-70%.
As shown in (a) and (b) of fig. 10, when the semi-transparent mask described in this embodiment is used to expose and develop the photoresist on the substrate 201, the exposure irradiation light 30 is irradiated onto the semi-transparent mask, and the exposure intensity of the exposure irradiation light from the semi-transparent mask is shown as an intensity curve 40, so as to finally obtain the patterned photoresist layer 202.
In the spectrum modulation layer 103, when the doping density of the rare earth complex located in the middle region is the same and the doping density of the rare earth complex linearly increases in a direction away from the middle region in the edge region near the light shielding layer 102 and the doping density of the rare earth complex linearly decreases in a direction away from the middle region in the edge region near the light transmitting region 1, as shown in (a) of fig. 10. Since the doping density of the rare earth complex in the middle region is the same in the spectrum modulation layer 103, and the doping density of the rare earth complex is linearly increased in the edge region close to the light shielding layer 102 in the direction away from the middle region, and the doping density of the rare earth complex is linearly decreased in the edge region close to the light transmitting region 1 in the direction away from the middle region, the exposure intensity of the exposure irradiation light 30 after passing through the spectrum modulation layer 103 is shown by the intensity curve 40, the exposure intensity of the middle region is the same, the exposure intensity of the edge region close to the light shielding layer 102 is linearly decreased in the direction away from the middle region, the exposure intensity of the edge region close to the light transmitting region 1 is linearly increased in the direction away from the middle region, and finally the exposure intensity is the same as the region corresponding to the light transmitting region 1; the ratio of the light resistance reaction to be eliminated is that the middle area is the same, the edge area close to the light shielding layer 102 is linearly decreased in the direction far away from the middle area and is finally the same as the area corresponding to the light shielding layer 102, the edge area close to the light transmitting area 1 is linearly increased in the direction far away from the middle area and is finally the same as the area corresponding to the light transmitting area 1; finally, the patterned photoresist layer 202 is obtained, the thickness of the photoresist layer in the area corresponding to the light shielding layer 102 is the same and the maximum, the photoresist in the area corresponding to the light transmitting area 1 is eliminated, in the area corresponding to the spectrum modulation layer 103, the thickness of the photoresist layer in the middle area is the same, the photoresist layer is close to the edge area of the light shielding layer 102, the thickness of the photoresist layer increases linearly in the direction away from the middle area, finally, the photoresist layer is the same as the photoresist in the area corresponding to the light shielding layer, the photoresist layer is close to the edge area of the light transmitting area 1, the photoresist layer thickness decreases linearly in the direction away from the middle area, and finally, the photoresist layer is the same at the. Two different photoresist film layer thicknesses are obtained, and meanwhile, slow transition between different film layer thicknesses and between a material area and a blank area is realized.
In the spectrum modulation layer 103, the doping density of the rare earth complex increases in an arc in a direction away from the light-transmitting region 1, as shown in (b) of fig. 10. Because the doping density of the rare earth complex increases in an arc manner in the direction far away from the light-transmitting region 1 in the spectrum modulation layer 103, the exposure light intensity of the exposure light 30 after passing through the spectrum modulation layer 103 is shown by an intensity curve 40, and decreases in an arc manner in the direction far away from the light-transmitting region 1, and the intensity of the exposure light is the same as the intensity of the light-transmitting region 1 and the intensity of the light-shielding layer 102 at two critical points; the ratio of the photoresist reaction to be eliminated is gradually decreased in an arc line in the direction away from the light-transmitting area 1, and the patterned photoresist layer 202 is finally obtained, the thickness of the photoresist layer in the area corresponding to the light-shielding layer 102 is the same and the maximum, the photoresist in the area corresponding to the light-transmitting area 1 is eliminated, and in the area corresponding to the spectrum modulation layer 103, the thickness of the photoresist in the direction away from the light-transmitting area 1 is gradually increased in an arc line and is finally the same as the thickness of the photoresist in the area corresponding to the light-shielding layer. Different photoresist film layer thicknesses are obtained, and meanwhile slow transition between different film layer thicknesses and between a material area and a blank area is achieved.
In another embodiment, the semi-transparent region 3 is located between the light-transmitting region 1 and the light-shielding region 2, as shown in fig. 11(a), the doping density of the rare earth complex in the spectrum modulation layer 103 is the same, and the doping content of the rare earth complex in the spectrum modulation layer is 5% -70%; in the spectrum modulation layer 103, the thickness of the film layer in the middle area is the same, the thickness of the edge area close to the light-transmitting area 1 is linearly decreased in the direction far away from the middle area, the thickness of the edge area close to the light-shielding layer 102 is linearly increased in the direction far away from the middle area, and the thickness of the joint of the edge area and the middle area is continuously excessive; the thickness of the spectral modulation layer 103 is designed with reference to the thickness of the photomask pattern layer, and is set according to the preset light intensity requirement, and the general range is 0.01-0.2 mm.
As shown in fig. 11(b), when the semi-transparent mask described in this embodiment is used to expose and develop the photoresist on the substrate 201, the exposure intensity of the exposure irradiation light 30 after passing through the spectrum modulation layer 103 is shown by the intensity curve 40, the exposure intensity of the middle region is the same, the exposure intensity of the edge region close to the light shielding layer 102 decreases linearly in the direction away from the middle region, the exposure intensity of the edge region close to the light transmitting region 1 increases linearly in the direction away from the middle region and finally is the same as the region corresponding to the light transmitting region 1; the ratio of the light resistance reaction to be eliminated is that the middle area is the same, the edge area close to the light shielding layer 102 is linearly decreased in the direction far away from the middle area and is finally the same as the area corresponding to the light shielding layer 102, the edge area close to the light transmitting area 1 is linearly increased in the direction far away from the middle area and is finally the same as the area corresponding to the light transmitting area 1; finally, the patterned photoresist layer 202 is obtained, the thickness of the photoresist layer in the area corresponding to the light shielding layer 102 is the same and the maximum, the photoresist in the area corresponding to the light transmitting area 1 is eliminated, in the area corresponding to the spectrum modulation layer 103, the thickness of the photoresist layer in the middle area is the same, the photoresist layer is close to the edge area of the light shielding layer 102, the thickness of the photoresist layer increases linearly in the direction away from the middle area, finally, the photoresist layer is the same as the photoresist in the area corresponding to the light shielding layer, the photoresist layer is close to the edge area of the light transmitting area 1, the photoresist layer thickness decreases linearly in the direction away from the middle area, and finally, the photoresist layer is the same at the. Two different photoresist film layer thicknesses are obtained, and meanwhile, slow transition between different film layer thicknesses and between a material area and a blank area is realized.
In another embodiment, the semi-transparent region 3 is located between the light-transmitting region 1 and the light-shielding region 2, as shown in fig. 12(a), the doping density of the rare earth complex in the spectrum modulation layer 103 is the same, and the doping content of the rare earth complex in the spectrum modulation layer is 5% to 70%; the thickness of the spectrum modulation layer 103 increases in an arc manner in the direction away from the light transmission region 1, and the thickness of the spectrum modulation layer 103 is designed by referring to the thickness of the photomask pattern layer and is set according to the preset light intensity requirement, wherein the general range is 0.01-0.2 mm.
As shown in fig. 12(b), when the semi-transparent mask described in this embodiment is used to expose and develop the photoresist on the substrate 201, the exposure light intensity of the exposure irradiation light 30 after passing through the spectrum modulation layer 103 is shown by the intensity curve 40, and decreases in an arc in the direction away from the light-transmitting region 1, and the intensity corresponding to the light-transmitting region 1 and the intensity corresponding to the light-shielding layer 102 are the same at two critical points; the ratio of the photoresist reaction to be eliminated is gradually decreased in an arc line in the direction away from the light-transmitting area 1, and the patterned photoresist layer 202 is finally obtained, the thickness of the photoresist layer in the area corresponding to the light-shielding layer 102 is the same and the maximum, the photoresist in the area corresponding to the light-transmitting area 1 is eliminated, and in the area corresponding to the spectrum modulation layer 103, the thickness of the photoresist in the direction away from the light-transmitting area 1 is gradually increased in an arc line and is finally the same as the thickness of the photoresist in the area corresponding to the light-shielding layer. Different photoresist film layer thicknesses are obtained, and meanwhile slow transition between different film layer thicknesses and between a material area and a blank area is achieved.
According to the above embodiments:
the invention provides a semi-transparent mask plate, which comprises a light transmitting area, a shading area and a semi-light transmitting area, wherein a spectrum modulation layer is arranged on a substrate positioned in the semi-light transmitting area, is doped with a specific rare earth complex, and can convert light rays positioned in a first wavelength range in exposure irradiation light rays into light rays in a second wavelength range which can not excite light resistance to react. Therefore, the attenuation of the exposure irradiation energy of the semi-transparent area is realized, the semi-transparent effect is achieved, different light wave conversion rates can be achieved by adjusting the variety of the rare earth complex, the doping density, the thickness of the spectrum modulation layer and other influence factors, and the control of different photoresist layer thicknesses is realized. The semi-transparent mask plate provided by the invention has the advantages of accurate and controllable semi-mask effect, simple process and low cost, and solves the problems of complex preparation process and high cost of the existing semi-transparent mask plate.
In summary, although the present invention has been described with reference to the preferred embodiments, the above-described preferred embodiments are not intended to limit the present invention, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, therefore, the scope of the present invention shall be determined by the appended claims.
Claims (9)
1. A method for preparing a photoresist layer, comprising:
depositing a layer of photoresist on the substrate;
exposing the light resistance by adopting a semi-transparent mask plate; the semi-transparent mask comprises a light transmitting area, a light shading area, a semi-light transmitting area, a light shading layer and a spectrum modulation layer, wherein the light shading layer is positioned in the light shading area, the spectrum modulation layer is a transparent film doped with a rare earth complex, the spectrum modulation layer is used for converting light rays in a first wavelength range in exposure light rays into light rays in a second wavelength range, the light rays in the first wavelength range can excite the photoresistance to react, and the light rays in the second wavelength range cannot excite the photoresistance to react;
removing the reacted photoresist to obtain a patterned photoresist layer; and in the area corresponding to the semi-transparent area, the photoresist of the part which is subjected to reaction is removed, and the photoresist of the part which is not subjected to reaction is reserved.
2. The method according to claim 1, wherein the spectral modulation layer has a uniform thickness.
3. The manufacturing method according to claim 1, wherein a thickness of the spectrum modulation layer is the same as a thickness of the light shielding layer.
4. The method according to claim 2, wherein the doping density of the rare earth complex decreases from both sides of the spectral modulation layer toward the middle of the spectral modulation layer.
5. The method according to claim 2, wherein the rare earth complex has a doping density that increases from both sides of the spectral modulation layer toward the middle of the spectral modulation layer.
6. The production method according to claim 1, wherein the doping densities of the rare earth complexes are the same in the spectrum modulating layer, and the thicknesses of the spectrum modulating layer in which at least two positions exist are different.
7. The method according to claim 6, wherein the thickness of the spectral modulation layer decreases from two sides of the spectral modulation layer to the middle of the spectral modulation layer.
8. The method according to claim 6, wherein the thickness of the spectral modulation layer increases from two sides of the spectral modulation layer to the middle of the spectral modulation layer.
9. The method of manufacturing according to claim 1, wherein the spectrum modulation layer partially covers the light shielding layer.
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| CN111308854A (en) * | 2019-11-14 | 2020-06-19 | Tcl华星光电技术有限公司 | Mask plate and manufacturing method thereof |
| CN115236933A (en) * | 2022-07-08 | 2022-10-25 | Tcl华星光电技术有限公司 | Mask and preparation method thereof |
| CN114911129B (en) * | 2022-07-11 | 2022-10-25 | 上海传芯半导体有限公司 | Mask base plate, photomask plate and preparation method thereof |
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| JP2002196472A (en) * | 1990-11-29 | 2002-07-12 | Toshiba Corp | Mask for exposure |
| US20050100798A1 (en) * | 2003-10-15 | 2005-05-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Device and method for providing wavelength reduction with a photomask |
| CN101576709A (en) * | 2009-06-10 | 2009-11-11 | 昆山龙腾光电有限公司 | Light shield and manufacturing method thereof |
| CN103105738B (en) * | 2011-11-14 | 2015-12-16 | 中芯国际集成电路制造(上海)有限公司 | A kind of exposure method |
| CN103412463A (en) * | 2013-08-27 | 2013-11-27 | 南通富士通微电子股份有限公司 | Mask plate and manufacturing method thereof |
| CN103745981A (en) * | 2013-12-04 | 2014-04-23 | 广东普加福光电科技有限公司 | Ultraviolet response type rare earth light conversion film and application thereof |
| KR102261512B1 (en) * | 2014-12-15 | 2021-06-07 | 삼성디스플레이 주식회사 | Photo mask and method of forming fine pattern using thereof |
| CN105562308B (en) * | 2016-02-19 | 2019-05-24 | 京东方科技集团股份有限公司 | A kind of curing method, the manufacturing method of display panel, display panel and mask |
| CN105837607B (en) * | 2016-05-05 | 2018-02-23 | 杭州师范大学 | A kind of rare earth organic complex and preparation method and application |
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Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee after: TCL Huaxing Photoelectric Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |
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