CN110209010A - Semi-transparent photomask board - Google Patents
Semi-transparent photomask board Download PDFInfo
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- CN110209010A CN110209010A CN201910440026.0A CN201910440026A CN110209010A CN 110209010 A CN110209010 A CN 110209010A CN 201910440026 A CN201910440026 A CN 201910440026A CN 110209010 A CN110209010 A CN 110209010A
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- spectral modulation
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- 230000003595 spectral effect Effects 0.000 claims abstract description 124
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 118
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 79
- 150000002910 rare earth metals Chemical class 0.000 claims abstract description 79
- 238000013329 compounding Methods 0.000 claims abstract description 69
- 230000007423 decrease Effects 0.000 claims abstract description 36
- 238000006116 polymerization reaction Methods 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000012216 screening Methods 0.000 claims description 3
- 238000001228 spectrum Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 17
- 238000002360 preparation method Methods 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 230000000873 masking effect Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 19
- 239000000463 material Substances 0.000 description 9
- 239000003446 ligand Substances 0.000 description 6
- 238000004020 luminiscence type Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000009194 climbing Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The present invention provides a kind of semi-transparent photomask board, it includes transparent area, shading region and semi-opaque region, spectral modulation layer is provided on the substrate in semi-opaque region, the spectral modulation layer is to be doped with specific rare earth compounding, the light being located in first wavelength range in exposure irradiation light can be converted into the light of second wave length range that cannot excite photoresist that polymerization reaction occurs.To realize the decrease of semi-opaque region exposure irradiation energy, achieve the effect that semi-transparent, and it can be by impact factors such as the thickness of the type of adjusting rare earth compounding, doping density and spectral modulation layer, to reach different light wave conversion ratios, to realize the control of different photoresist thickness.Semi-transparent photomask board provided by the invention, half masking effect is precisely controllable, and simple process, at low cost, and alleviating existing semi-transparent photomask board, there are preparation process complexity, problems at high cost.
Description
Technical field
The present invention relates to display preparation field more particularly to a kind of semi-transparent photomask boards.
Background technique
Semi-transparent photomask board can reduce exposure due to having both opaque, full impregnated light, semi-transparent characteristic, in patterning process
Develop number, simplifies preparation procedure, has been widely used in the preparation field of display device.
However, due to the presence in semi-transparent region, especially semi-transparent region and light tight region intersection climbing region
Presence so that the design and manufacture craft difficulty of semi-transparent photomask board are big, cost of manufacture is high.
Therefore, there are preparation process complexity, problem at high cost to have to be solved for existing semi-transparent photomask board.
Summary of the invention
The present invention provides a kind of semi-transparent photomask board, with alleviate existing semi-transparent photomask board there are preparation process complexity, at
This high problem.
In order to solve the above problem, technical solution provided by the invention is as follows:
The present invention provides a kind of semi-transparent photomask board, for etching photoresist, including transparent area, shading region and semi-transparent
Area, which is characterized in that the semi-transparent photomask board includes:
Substrate；
The light shield layer for being disposed on the substrate and being located in shading region；
The spectral modulation layer for being disposed on the substrate and being located in semi-opaque region, for first will to be located in exposure irradiation light
Light in wave-length coverage, is converted into the light of second wave length range, and the light within the scope of the second wave length is unable to exciting light
Polymerization reaction occurs for resistance.
In semi-transparent photomask board provided by the invention, the spectral modulation layer is the thin transparent of rare earth compounding doping
Film.
In semi-transparent photomask board provided by the invention, in the spectral modulation layer, the rare earth compounding is in difference
The doping parameters of position are different.
In semi-transparent photomask board provided by the invention, the rare earth compounding is different in the doping density of different location.
In semi-transparent photomask board provided by the invention, the doping density of the rare earth compounding, from the spectral modulation
Successively decrease to the centre of the spectral modulation layer on the both sides of layer.
In semi-transparent photomask board provided by the invention, the doping density of the rare earth compounding, from the spectral modulation
The both sides of layer are incremented by the centre of the spectral modulation layer.
In semi-transparent photomask board provided by the invention, in the spectral modulation layer, there are the institutes of at least two positions
The thickness for stating spectral modulation layer is different.
In semi-transparent photomask board provided by the invention, the thickness of the spectral modulation layer, from the spectral modulation layer
Successively decrease to the centre of the spectral modulation layer on both sides.
In semi-transparent photomask board provided by the invention, the thickness of the spectral modulation layer, from the spectral modulation layer
Both sides are incremented by the centre of the spectral modulation layer.
In semi-transparent photomask board provided by the invention, spectral modulation layer part covers the light shield layer.
The invention has the benefit that the present invention provides a kind of semi-transparent photomask board comprising transparent area, shading region, with
And semi-opaque region, spectral modulation layer is provided on the substrate in semi-opaque region, the spectral modulation layer is specific dilute to be doped with
Native complex can be converted into the light being located in exposure irradiation light in first wavelength range that cannot excite photoresist
The light of the second wave length range of polymerization reaction.To realize the decrease of semi-opaque region exposure irradiation energy, reach semi-transparent
The effect of light, and can be influenced by the thickness etc. for adjusting the type of rare earth compounding, doping density and spectral modulation layer because
Son, to reach different light wave conversion ratios, to realize the control of different photoresist thickness.Semi-transparent photomask board provided by the invention,
Half masking effect is precisely controllable, and simple process, at low cost, alleviates existing semi-transparent photomask board there are preparation process complexity,
Problem at high cost.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of invention
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is the structural schematic diagram of the first structure of semi-transparent photomask board provided in an embodiment of the present invention.
Fig. 2 (a) is the first effect diagram of the semi-transparent photomask board of the first structure provided in an embodiment of the present invention.
Fig. 2 (b) is second of effect diagram of the semi-transparent photomask board of the first structure provided in an embodiment of the present invention.
Fig. 3 (a) is second of structural schematic diagram of semi-transparent photomask board provided in an embodiment of the present invention.
Fig. 3 (b) is the effect diagram of the semi-transparent photomask board of second of structure provided in an embodiment of the present invention.
Fig. 4 (a) is the third structural schematic diagram of semi-transparent photomask board provided in an embodiment of the present invention.
Fig. 4 (b) is the effect diagram of the semi-transparent photomask board of the third structure provided in an embodiment of the present invention.
Fig. 5 is the 4th kind of structural schematic diagram of semi-transparent photomask board provided in an embodiment of the present invention.
Fig. 6 (a) is the first effect diagram of the semi-transparent photomask board of the 4th kind of structure provided in an embodiment of the present invention.
Fig. 6 (b) is second of effect diagram of the semi-transparent photomask board of the 4th kind of structure provided in an embodiment of the present invention.
Fig. 7 (a) is the 5th kind of structural schematic diagram of semi-transparent photomask board provided in an embodiment of the present invention.
Fig. 7 (b) is the effect diagram of the semi-transparent photomask board of the 5th kind of structure provided in an embodiment of the present invention.
Fig. 8 (a) is the 6th kind of structural schematic diagram of semi-transparent photomask board provided in an embodiment of the present invention.
Fig. 8 (b) is the effect diagram of the semi-transparent photomask board of the 6th kind of structure provided in an embodiment of the present invention.
Fig. 9 is the 7th kind of structural schematic diagram of semi-transparent photomask board provided in an embodiment of the present invention.
Figure 10 (a) is the first effect signal of the semi-transparent photomask board of the 7th kind of structure provided in an embodiment of the present invention
Figure.
Figure 10 (b) is second of effect signal of the semi-transparent photomask board of the 7th kind of structure provided in an embodiment of the present invention
Figure.
Figure 11 (a) is the 8th kind of structural schematic diagram of semi-transparent photomask board provided in an embodiment of the present invention.
Figure 11 (b) is the effect diagram of the semi-transparent photomask board of the 8th kind of structure provided in an embodiment of the present invention.
Figure 12 (a) is the 9th kind of structural schematic diagram of semi-transparent photomask board provided in an embodiment of the present invention.
Figure 12 (b) is the effect diagram of the semi-transparent photomask board of the 9th kind of structure provided in an embodiment of the present invention.
Specific embodiment
Below in conjunction with specific embodiments of the present invention, to the technical side in embodiment of the present invention and/or embodiment
Case carries out clear, complete description, it is clear that, embodiment and/or embodiment disclosed below is only the present invention
A part of embodiment and/or embodiment, rather than whole embodiments and/or embodiment.Based on the implementation in the present invention
Scheme and/or embodiment, those of ordinary skill in the art are not making the front lower every other reality obtained of creative work
Scheme and/or embodiment are applied, the scope of the present invention is belonged to.
The direction term that the present invention is previously mentioned, for example, [on], [under], [left side], [right side], [preceding], [rear], [interior], [outer],
[side] etc. is only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the present invention, rather than
To limit the present invention.Term " first ", " second " etc. are used for description purposes only, and should not be understood as indicating or implying its phase
To importance or implicitly indicate the quantity of indicated technical characteristic.The feature for defining " first ", " second " etc. as a result, can
To explicitly or implicitly include one or more of the features.
For existing semi-transparent photomask board, there are preparation process complexity, and problem at high cost, the present invention provides a kind of semi-transparent
Photomask board can alleviate this problem.
In one embodiment, as shown in Figure 1, semi-transparent photomask board 10 provided by the invention includes transparent area 1, shading region
2 and semi-opaque region 3；The semi-transparent photomask board 10 includes:
Substrate 101, substrate 101 can be one such or other for soda-lime glass, quartz glass or Pyrex
Any transparent material.
The light shield layer 102 on the substrate 101 and being located in shading region 2 is set, blocks exposure irradiation light is used for；Light shield layer
102 be opaque metal material layer or other lighttight material layers.
The spectral modulation layer 103 on the substrate 101 and being located in semi-opaque region 3 is set, and being used for will be in exposure irradiation light
Light in first wavelength range is converted into the light of second wave length range, and the light within the scope of the second wave length is not
It can excite photoresist that polymerization reaction occurs.Spectral modulation layer 103 is the transparent membrane of rare earth compounding doping, wherein rare earth cooperation
Object refers to the complex being made of rare earth central ion and ion ligand, wherein ion ligand refer to yttrium (Y), scandium (Sc) and
One of 15 clock lanthanide series such as lanthanum (La), cerium (Ce) plasma ligand are a variety of.Rare earth compounding in spectral modulation layer 103
Doping to can be single rare earth complex doped, be also possible to two kinds, three kinds or a variety of rare earth compounding co-dopeds.
The light that spectral modulation layer 103 will be located in first wavelength range in exposure irradiation light, is converted into excite
Photoresist occur polymerization reaction second wave length range light, principle are as follows: exposure irradiation light irradiation have particular ligand and
When the rare earth compounding of central ion, the ligand with specific wavelength absorption coefficient absorbs the luminous energy of the specific wavelength light, and
Energy is transmitted to rare earth central ion, rare earth central ion is excited after receiving the energy from ligand, in electronics
By ground state transition to excitation state, the electronics of excitation state is unstable, needs to return to the lower state of energy, will be in the form of photon
It gives off energy, generates fluorescence, is i.e. the reaction of generation luminescence generated by light；The rare earth compounding luminescence generated by light, the light launched are not
The long glistening light of waves of energy exciting light resistance polymerization reaction, the light for realizing specific wavelength part in exposure irradiation light turn to long light wave
It changes.Near infrared light of the ultraviolet-visible light (300-500nm) to long wavelength may be implemented in the luminescence generated by light of rare earth solid complexes
Conversion.
When exposure irradiation light is irradiated to transparent area, exposure irradiation light by any blocking, is not completely extended across semi-transparent
Mask plate reaches photoresist, develops to the photoresistance exposure in the corresponding region, the exposure that the photoresist in the corresponding region receives at this time
The intensity of light irradiation light is most strong, and the photoresist almost all occurs polymerization reaction and is removed.
When exposure irradiation light is irradiated to shading region 2, exposure irradiation light is all stopped by light shield layer 102, and exposure is shone
Light shield layer 102 can not be penetrated by penetrating light, can not reach photoresist, the exposure irradiation light that the photoresist in the corresponding region receives at this time
The intensity of line is almost nil, and the photoresist almost all is retained.
Specific rare earth compounding when exposure irradiation light is irradiated to semi-opaque region 3, in spectral modulation layer 103, it will
The light of specific wavelength part in exposure irradiation light is converted, the long wave for making it become to be unable to exciting light resistance polymerization reaction
Light, so that the exposure irradiation light of only part, which passes through the spectral modulation layer 103, reaches photoresist, in the corresponding region
Photoresist be exposed development, the intensity for the exposure irradiation light that the photoresist in the corresponding region receives at this time is weakened,
But still having portion of energy reservation, the photoresist part occurs polymerization reaction and is removed, and the photoresist of rest part is retained.
The present invention provides a kind of semi-transparent photomask board, by the rare earth compounding in spectral modulation layer, by exposure irradiation light
The light being located in first wavelength range in line is converted into the light of second wave length range that cannot excite photoresist that polymerization reaction occurs
Line.To realize the decrease of semi-opaque region exposure irradiation energy, achieve the effect that semi-transparent, and can pass through and adjust rare earth
The impact factors such as the thickness of the type of complex, doping density and spectral modulation layer, to reach different light wave conversion ratios,
To realize the control of different photoresist thickness.Semi-transparent photomask board provided by the invention, half masking effect is precisely controllable, and technique letter
Single, at low cost, alleviating existing semi-transparent photomask board, there are preparation process complexity, problems at high cost.
In semi-transparent photomask board provided by the invention, the conversion effect of 103 pairs of exposure irradiation light of spectral modulation layer,
With the thickness of the type of rare earth compounding, the doping density of rare earth compounding and spectral modulation layer 103 in spectral modulation layer 103
It spends related, semi-transparent photomask board 10 of the invention is done below in conjunction with specific embodiment and further annotates explanation.
In one embodiment, semi-opaque region 3 is between shading region 2, as shown in Figure 1, the thickness of spectral modulation layer 103
Uniformity, and light shield layer 102 described in the valve deck of part, thickness refers to the thickness design of light shield graph layer, according to default light intensity
Demand setting, general range 0.01-0.2mm can be identical as the thickness of light shield layer 102 as shown in Figure 1, can also compare shading
The thickness of layer 102 is big, can also be smaller than the thickness of light shield layer 102；In the spectral modulation layer 103, intermediate region rare earth is matched
The doping density for closing object is smaller than the doping density of fringe region rare earth compounding, and the doping density of fringe region rare earth compounding
Successively decrease on the direction far from intermediate region, the doping density of fringe region and the rare earth compounding of intermediate region junction is continuous
Excessively, the doping density positioned at the rare earth compounding of intermediate region can be identical, can also be at separate spectral modulation layer center
Successively decrease on direction.Doping quality accounting of the rare earth compounding in spectral modulation layer is 5%-70%.
In Fig. 2 shown in (a) and (b), the semi-transparent photomask board 10 described in the present embodiment is on substrate 201
When photoresist is exposed development, exposure irradiation light 30 is irradiated on semi-transparent photomask board 10, is come out from semi-transparent photomask board 10
Exposure irradiation light exposure intensity be intensity curve 40 shown in, finally obtain patterned photoresist layer 202.
In spectral modulation layer 103, when the doping density for the rare earth compounding for being located at intermediate region is identical, and fringe region
The doping density of rare earth compounding is in linear decrease on the direction far from intermediate region, in Fig. 2 shown in (a).Due in light
It composes in modulating layer 103, the doping density positioned at the rare earth compounding of intermediate region is identical, the doping of fringe region rare earth compounding
Density linear decrease on the direction far from intermediate region, therefore, exposure irradiation light 30 is after passing through the spectral modulation layer 103
Exposure light intensity be shown in intensity curve 40, the exposure intensity of intermediate region is identical and most strong, and the exposure intensity of fringe region exists
Linear decrease on direction far from intermediate region；The ratio that photoresist polymerization reaction is eliminated just is that intermediate region is most, marginal zone
Domain is gradually reduced finally identical as light shield layer corresponding region on the direction far from intermediate region, finally obtains patterned photoresist
Layer 202, the thickness of photoresist layer is identical and maximum in the corresponding region of light shield layer 102, in the corresponding region of spectral modulation layer 103
Interior, the thickness of intermediate region photoresist layer is identical and minimum, and the thickness of fringe region photoresist layer is on the direction far from intermediate region
Linear increment finally reaches identical as the thickness of photoresist in light shield layer corresponding region.Two different photoresistance film thickness are obtained
Degree, while realizing slow excessive between different thicknesses of layers.
When the doping density of rare earth compounding in spectral modulation layer 103 is on the direction far from 103 center of spectral modulation layer
It is arc-shaped when successively decreasing, in Fig. 2 shown in (b).Since the doping density of rare earth compounding in spectral modulation layer 103 is far from light
It composes to be arc-shaped on the direction at 103 center of modulating layer and successively decrease, therefore, exposure irradiation light 30 is passing through the spectral modulation layer 103
Exposure light intensity afterwards is that exposure light intensity, which is arc-shaped, successively decreases, and the exposure intensity of central area is most strong, side shown in intensity curve 40
The exposure intensity in edge region is most weak；The ratio that photoresist polymerization reaction is eliminated just is that intermediate region is most, and fringe region is separate
It is gradually reduced finally identical as light shield layer corresponding region on the direction of central area, finally obtains patterned photoresist layer 202, hide
The thickness of photoresist layer is identical and maximum in the corresponding region of photosphere 102, in the corresponding region of spectral modulation layer 103, center
The thickness of domain photoresist layer is minimum, and the thickness of fringe region photoresist layer is arc-shaped on the direction far from central area to be incremented by, finally
Reach identical as the thickness of photoresist in light shield layer corresponding region.Different photoresist thicknesses of layers is obtained, while realizing different films
It is slow excessive between thickness degree.
It, can be by controlling the rare earth compounding in spectral modulation layer 103 when the consistency of thickness of spectral modulation layer 103
The doping density of different location realizes different 202 thickness of photoresist layer and shape.
In another embodiment, semi-opaque region 3 is between shading region 2, in Fig. 3 shown in (a), in spectral modulation layer
The doping density of rare earth compounding is identical in 103, and doping quality accounting of the rare earth compounding in spectral modulation layer is 5%-
70%；In spectral modulation layer 103, the thicknesses of layers of intermediate region is identical, and the thickness of fringe region is bigger than the thickness of intermediate region,
And the linear increment on the direction far from intermediate region, fringe region and the thickness of intermediate region junction are continuously excessive；Spectrum
The thickness of modulating layer 103 refers to the thickness design of light shield graph layer, is arranged according to default light intensity demand, general range 0.01-
0.2mm。
In Fig. 3 shown in (b), the semi-transparent photomask board contraposition described in the present embodiment in the photoresist on substrate 201 into
When row exposure development, exposure irradiation light 30 pass through the spectral modulation layer 103 after exposure light intensity be intensity curve 40 shown in,
The exposure intensity of intermediate region is identical and most strong, and the exposure intensity of fringe region is linearly passed on the direction far from intermediate region
Subtract；The ratio that photoresist polymerization reaction is eliminated just is that intermediate region is most, fringe region far from intermediate region direction on by
It is decrescence small finally identical as light shield layer corresponding region；Finally obtain patterned photoresist layer 202, the corresponding region of light shield layer 102
The thickness of interior photoresist layer is identical and maximum, and in the corresponding region of spectral modulation layer 103, the thickness of intermediate region photoresist layer is identical
And it is minimum, the thickness of fringe region photoresist layer linear increment on the direction far from intermediate region finally reaches and light shield layer pair
Answer the thickness of photoresist in region identical.Obtained two different photoresist thicknesses of layers, at the same realize different thicknesses of layers it
Between it is slow excessively.
In another embodiment, semi-opaque region 3 is between shading region 2, in Fig. 4 shown in (a), in spectral modulation layer
The doping density of rare earth compounding is identical in 103, and doping quality accounting of the rare earth compounding in spectral modulation layer is 5%-
70%；The thickness of spectral modulation layer 103 far from 103 center of spectral modulation layer direction on be arc-shaped it is incremental, finally with screening
The thickness of photosphere 102 is identical；The thickness of spectral modulation layer 103 refers to the thickness design of light shield graph layer, according to default light intensity need
Ask setting, general range 0.01-0.2mm.
In Fig. 4 shown in (b), the semi-transparent photomask board contraposition described in the present embodiment in the photoresist on substrate 201 into
When row exposure development, exposure irradiation light 30 pass through the spectral modulation layer 103 after exposure light intensity be intensity curve 40 shown in,
It, which exposes light intensity and is arc-shaped, successively decreases, and the exposure intensity of central area is most strong, and the exposure intensity of fringe region is most weak；Photoresist polymerization
Reacting the ratio that is eliminated just is that intermediate region is most, fringe region be gradually reduced on the direction far from central area finally with
Light shield layer corresponding region is identical, finally obtains patterned photoresist layer 202, the thickness of photoresist layer in the corresponding region of light shield layer 102
Spend identical and maximum, in the corresponding region of spectral modulation layer 103, the thickness of central area photoresist layer is minimum, fringe region light
The thickness of resistance layer is arc-shaped on the direction far from central area to be incremented by, and the thickness with photoresist in light shield layer corresponding region is finally reached
It spends identical.Different photoresist thicknesses of layers is obtained, while being realized slow excessive between different thicknesses of layers.
It, can be by controlling the spectral modulation layer when the doping density of rare earth compounding in spectral modulation layer 103 is consistent
The thickness of 103 different locations realizes different 202 thickness of photoresist layer and shape.
In one embodiment, semi-opaque region 3 is between transparent area 1, as shown in figure 5, the thickness of spectral modulation layer 103
Uniformity, thickness refer to the thickness design of light shield graph layer, are arranged according to default light intensity demand, general range 0.01-
0.2mm, can be identical as the thickness of light shield layer 102 as shown in Figure 5, can also be bigger than the thickness of light shield layer 102, can also be than hiding
The thickness of photosphere 102 is small；In the spectral modulation layer 103, the doping density of intermediate region rare earth compounding compares fringe region
The doping density of rare earth compounding is small, and the doping density of fringe region rare earth compounding is passed on the direction far from intermediate region
Increase, the doping density of fringe region and the rare earth compounding of intermediate region junction is continuously excessive, the rare earth positioned at intermediate region
The doping density of complex can be identical, can also successively decrease on the direction far from spectral modulation layer center.Rare earth compounding exists
Doping quality accounting in spectral modulation layer is 5%-70%.
In Fig. 6 shown in (a) and (b), semi-transparent photomask board contraposition is in the light on substrate 201 described in the present embodiment
When resistance is exposed development, exposure irradiation light 30 is irradiated on semi-transparent photomask board, the exposure come out from semi-transparent photomask board
The exposure intensity of irradiation light is to finally obtain patterned photoresist layer 202 shown in intensity curve 40.
In spectral modulation layer 103, when the doping density for the rare earth compounding for being located at intermediate region is identical, and fringe region
The doping density of rare earth compounding is in linear increment on the direction far from intermediate region, in Fig. 6 shown in (a).Due in light
It composes in modulating layer 103, the doping density positioned at the rare earth compounding of intermediate region is identical, the doping of fringe region rare earth compounding
Density linear increment on the direction far from intermediate region, therefore, exposure irradiation light 30 is after passing through the spectral modulation layer 103
Exposure light intensity be intensity curve 40 shown in, the exposure intensity of intermediate region is identical and most weak, and the exposure intensity of fringe region exists
Linear increment on direction far from intermediate region；The ratio that photoresist polymerization reaction is eliminated just is that intermediate region is minimum, marginal zone
Domain is gradually increased on the direction far from intermediate region, finally obtains patterned photoresist layer 202, the corresponding region of transparent area 1
Interior photoresist is eliminated, and in the corresponding region of spectral modulation layer 103, the thickness of intermediate region photoresist layer is identical and maximum, edge
The thickness of region photoresist layer far from intermediate region direction on linear decrease, finally with transparent area corresponding region contact position phase
Together.Obtained the photoresist layer 202 of certain thicknesses of layers, at the same realize material area and white space it is slow excessively.
When the doping density of rare earth compounding in spectral modulation layer 103 is on the direction far from 103 center of spectral modulation layer
When being arc-shaped incremental, in Fig. 6 shown in (b).Since the doping density of rare earth compounding in spectral modulation layer 103 is far from light
Compose 103 center of modulating layer direction on be arc-shaped it is incremental, therefore, exposure irradiation light 30 pass through the spectral modulation layer 103
Exposure light intensity afterwards is shown in intensity curve 40, and exposure light intensity is arc-shaped incremental, and the exposure intensity of central area is most weak, side
The exposure intensity in edge region is most strong；The ratio that photoresist polymerization reaction is eliminated just is that intermediate region is minimum, and fringe region is separate
Gradually increase on the direction of central area, finally obtains patterned photoresist layer 202, photoresist quilt in the corresponding region of transparent area 1
It eliminates, in the corresponding region of spectral modulation layer 103, the thickness of central area photoresist layer is maximum, the thickness of fringe region photoresist layer
Degree is arc-shaped on the direction far from intermediate region to successively decrease, and finally reaches identical as the thickness of 1 corresponding region contact position of transparent area.
Obtained the photoresist layer 202 of certain thicknesses of layers, at the same realize material area and white space it is slow excessively.
In another embodiment, semi-opaque region 3 is between transparent area 1, in Fig. 7 shown in (a), in spectral modulation layer
The doping density of rare earth compounding is identical in 103, and doping quality accounting of the rare earth compounding in spectral modulation layer is 5%-
70%；In spectral modulation layer 103, the thicknesses of layers of intermediate region is identical, and the thickness of fringe region is smaller than the thickness of intermediate region,
And the linear decrease on the direction far from intermediate region, fringe region and the thickness of intermediate region junction are continuously excessive；Spectrum
The thickness of modulating layer 103 refers to the thickness design of light shield graph layer, is arranged according to default light intensity demand, general range 0.01-
0.2mm。
In Fig. 7 shown in (b), the semi-transparent photomask board contraposition described in the present embodiment in the photoresist on substrate 201 into
When row exposure development, exposure irradiation light 30 pass through the spectral modulation layer 103 after exposure light intensity be intensity curve 40 shown in,
The exposure intensity of intermediate region is identical and most weak, and the exposure intensity of fringe region is linearly passed on the direction far from intermediate region
Increase；The ratio that photoresist polymerization reaction is eliminated just is that intermediate region is minimum, fringe region far from intermediate region direction on by
It is cumulative big finally identical as 1 corresponding region of transparent area, patterned photoresist layer 202 is finally obtained, in the corresponding region of transparent area 1
Photoresist is eliminated, and in the corresponding region of spectral modulation layer 103, the thickness of intermediate region photoresist layer is identical and maximum, marginal zone
The thickness of domain photoresist layer far from intermediate region direction on linear decrease, finally with 1 corresponding region contact position phase of transparent area
Together.Obtained the photoresist layer 202 of certain thicknesses of layers, at the same realize material area and white space it is slow excessively.
In another embodiment, semi-opaque region 3 is between transparent area 1, in Fig. 8 shown in (a), in spectral modulation layer
The doping density of rare earth compounding is identical in 103, and doping quality accounting of the rare earth compounding in spectral modulation layer is 5%-
70%；In spectral modulation layer 103, the thickness of fringe region is bigger than the thickness of intermediate region, and far from spectral modulation layer 103
Successively decrease on the direction in heart district domain in camber line；The thickness of spectral modulation layer 103 refers to the thickness design of light shield graph layer, according to default
The setting of light intensity demand, general range 0.01-0.2mm.
In Fig. 8 shown in (b), the semi-transparent photomask board contraposition described in the present embodiment in the photoresist on substrate 201 into
When row exposure development, exposure irradiation light 30 pass through the spectral modulation layer 103 after exposure light intensity be intensity curve 40 shown in,
It exposes light intensity and is arc-shaped incremental, and the exposure intensity of central area is most weak, and the exposure intensity of fringe region is most strong；Photoresist polymerization
Reacting the ratio that is eliminated just is that intermediate region is minimum, fringe region gradually increase on the direction far from central area finally with
1 corresponding region of transparent area is identical, finally obtains patterned photoresist layer 202, and photoresist is eliminated in the corresponding region of transparent area 1,
In the corresponding region of spectral modulation layer 103, the thickness of central area photoresist layer is maximum, and the thickness of fringe region photoresist layer is remote
It is arc-shaped from the direction of intermediate region to successively decrease, it finally reaches identical as the thickness of 1 corresponding region contact position of transparent area.It obtains
The photoresist layer 202 of certain thicknesses of layers, at the same realize material area and white space it is slow excessively.
In one embodiment, semi-opaque region 3 is between transparent area 1 and shading region 2, as shown in figure 9, spectral modulation layer
103 thickness uniformity, thickness refer to the thickness design of light shield graph layer, are arranged according to default light intensity demand, general model
It encloses for 0.01-0.2mm, can be identical as the thickness of light shield layer 102 as shown in Figure 9, can also be bigger than the thickness of light shield layer 102,
It can also be smaller than the thickness of light shield layer 102；In the spectral modulation layer 103, the doping density of rare earth compounding is close to screening
It is incremented by the direction of photosphere 102, successively decreases on the direction close to transparent area 1.Doping of the rare earth compounding in spectral modulation layer
Quality accounting is 5%-70%.
In Figure 10 shown in (a) and (b), semi-transparent photomask board contraposition is on substrate 201 described in the present embodiment
When photoresist is exposed development, exposure irradiation light 30 is irradiated on semi-transparent photomask board, the exposure come out from semi-transparent photomask board
The exposure intensity of light irradiation light is to finally obtain patterned photoresist layer 202 shown in intensity curve 40.
In spectral modulation layer 103, when be located at intermediate region rare earth compounding doping density it is identical, and close to hide
In the fringe region of photosphere 102, the doping density of rare earth compounding linear increment on the direction far from intermediate region, close
In the fringe region of transparent area 1, the doping density of rare earth compounding is such as schemed in linear decrease on the direction far from intermediate region
In 10 shown in (a).Since in spectral modulation layer 103, the doping density positioned at the rare earth compounding of intermediate region is identical, and
In the fringe region of light shield layer 102, the doping density of rare earth compounding linear increment on the direction far from intermediate region,
In the fringe region close to transparent area 1, the doping density of rare earth compounding linear decrease on the direction far from intermediate region,
Therefore, exposure irradiation light 30 is intermediate region shown in intensity curve 40 passing through the exposure light intensity after the spectral modulation layer 103
Exposure intensity it is identical, close to light shield layer 102 fringe region exposure intensity, far from intermediate region direction on linearly pass
Subtract, close to the exposure intensity of the fringe region of transparent area 1, the linear increment and finally and light transmission on the direction far from intermediate region
1 corresponding region of area is identical；The ratio that photoresist polymerization reaction is eliminated just is that intermediate region is identical, close to the edge of light shield layer 102
Region, linear decrease and finally identical as 102 corresponding region of light shield layer, close transparent area 1 on the direction far from intermediate region
Fringe region, the linear increment and finally identical as 1 corresponding region of transparent area on the direction far from intermediate region；It finally obtains
Patterned photoresist layer 202, the thickness of photoresist layer is identical and maximum in the corresponding region of light shield layer 102, the corresponding area of transparent area 1
Photoresist is eliminated in domain, and in the corresponding region of spectral modulation layer 103, the thickness of intermediate region photoresist layer is identical, close to shading
The fringe region of layer 102, the thickness of photoresist layer linear increment on the direction far from intermediate region, finally reaches and light shield layer pair
Answer the thickness of photoresist in region identical, close to the fringe region of transparent area 1, the thickness of photoresist layer is in the direction far from intermediate region
Upper linear decrease, finally identical as 1 corresponding region contact position of transparent area.Two different photoresist thicknesses of layers are obtained, together
When realize between different thicknesses of layers, between material area and white space it is slow excessively.
In spectral modulation layer 103, the doping density of rare earth compounding is incremented by the direction far from transparent area 1 in camber line
When, in Figure 10 shown in (b).Since in spectral modulation layer 103, the doping density of rare earth compounding is in separate transparent area 1
It is incremented by direction in camber line, therefore, exposure light intensity of the exposure irradiation light 30 after passing through the spectral modulation layer 103 is that intensity is bent
Shown in line 40, successively decrease on the direction far from transparent area 1 in camber line, and two critical points respectively with 1 respective intensities of transparent area
It is identical with 102 respective intensities of light shield layer；The ratio that photoresist polymerization reaction is eliminated just is on the direction far from transparent area 1 in arc
Line successively decreases, and finally obtains patterned photoresist layer 202, and the thickness of photoresist layer is identical and maximum in the corresponding region of light shield layer 102,
Photoresist is eliminated in the corresponding region of transparent area 1, in the corresponding region of spectral modulation layer 103, in the direction far from transparent area 1
The thickness of upper photoresist is incremental and finally identical as the thickness of photoresist in light shield layer corresponding region in camber line.Different photoresists is obtained
Thicknesses of layers, while realizing slow excessive between different thicknesses of layers, between material area and white space.
In another embodiment, semi-opaque region 3 is between transparent area 1 and shading region 2, in Figure 11 shown in (a),
The doping density of rare earth compounding is identical in spectral modulation layer 103, and doping quality of the rare earth compounding in spectral modulation layer accounts for
Than for 5%-70%；In spectral modulation layer 103, the thicknesses of layers of intermediate region is identical, and the fringe region close to transparent area 1 is remote
From thickness linear decrease on the direction of intermediate region, the fringe region close to light shield layer 102 is on the direction far from intermediate region
Thickness linear increment, fringe region and the thickness of intermediate region junction are continuously excessive；The thickness reference light of spectral modulation layer 103
The thickness design of cover graph layer is arranged, general range 0.01-0.2mm according to default light intensity demand.
In Figure 11 shown in (b), the semi-transparent photomask board contraposition described in the present embodiment in the photoresist on substrate 201 into
When row exposure development, exposure irradiation light 30 pass through the spectral modulation layer 103 after exposure light intensity be intensity curve 40 shown in,
The exposure intensity of intermediate region is identical, close to the exposure intensity of the fringe region of light shield layer 102, in the direction far from intermediate region
Upper linear decrease, close to the exposure intensity of the fringe region of transparent area 1, the linear increment and most on the direction far from intermediate region
It is identical as 1 corresponding region of transparent area eventually；The ratio that photoresist polymerization reaction is eliminated just is that intermediate region is identical, close to light shield layer
102 fringe region, the linear decrease and finally identical as 102 corresponding region of light shield layer on the direction far from intermediate region, is leaned on
The fringe region of nearly transparent area 1, on the direction far from intermediate region linear increment and finally with 1 corresponding region phase of transparent area
Together；Patterned photoresist layer 202 is finally obtained, the thickness of photoresist layer is identical and maximum in the corresponding region of light shield layer 102, light transmission
Photoresist is eliminated in the corresponding region in area 1, in the corresponding region of spectral modulation layer 103, the thickness phase of intermediate region photoresist layer
Together, close to the fringe region of light shield layer 102, the thickness of photoresist layer linear increment on the direction far from intermediate region finally reaches
To identical as the thickness of photoresist in light shield layer corresponding region, close to the fringe region of transparent area 1, the thickness of photoresist layer is far from
Between region direction on linear decrease, finally identical as 1 corresponding region contact position of transparent area.Two different photoresists are obtained
Thicknesses of layers, while realizing slow excessive between different thicknesses of layers, between material area and white space.
In another embodiment, semi-opaque region 3 is between transparent area 1 and shading region 2, in Figure 12 shown in (a),
The doping density of rare earth compounding is identical in spectral modulation layer 103, and doping quality of the rare earth compounding in spectral modulation layer accounts for
Than for 5%-70%；The thickness of spectral modulation layer 103 camber line on the direction far from transparent area 1 is incremented by, spectral modulation layer 103
Thickness refers to the thickness design of light shield graph layer, is arranged according to default light intensity demand, general range 0.01-0.2mm.
In Figure 12 shown in (b), the semi-transparent photomask board contraposition described in the present embodiment in the photoresist on substrate 201 into
When row exposure development, exposure irradiation light 30 pass through the spectral modulation layer 103 after exposure light intensity be intensity curve 40 shown in,
Successively decrease on the direction far from transparent area 1 in camber line, and two critical points respectively with 1 respective intensities of transparent area and light shield layer
102 respective intensities are identical；The ratio that photoresist polymerization reaction is eliminated just is to successively decrease on the direction far from transparent area 1 in camber line,
Patterned photoresist layer 202 is finally obtained, the thickness of photoresist layer is identical and maximum in the corresponding region of light shield layer 102, transparent area 1
Photoresist is eliminated in corresponding region, in the corresponding region of spectral modulation layer 103, the photoresist on the direction far from transparent area 1
Thickness in camber line be incremented by and it is finally identical as the thickness of photoresist in light shield layer corresponding region.Different photoresistance film thickness is obtained
Degree, while realizing slow excessive between different thicknesses of layers, between material area and white space.
According to above-described embodiment:
The present invention provides a kind of semi-transparent photomask board comprising transparent area, shading region and semi-opaque region are located at semi-transparent
Spectral modulation floor is provided on substrate in light area, which is to be doped with specific rare earth compounding, can will be exposed
The light being located in first wavelength range in irradiation light is converted into the second wave length model that cannot excite photoresist that polymerization reaction occurs
The light enclosed.To realize the decrease of semi-opaque region exposure irradiation energy, achieve the effect that semi-transparent, and tune can have been passed through
The impact factors such as the thickness of the type of rare earth compounding, doping density and spectral modulation layer are saved, the light wave to reach different turns
Rate is changed, to realize the control of different photoresist thickness.Semi-transparent photomask board provided by the invention, half masking effect is precisely controllable, and
Simple process, at low cost, alleviating existing semi-transparent photomask board, there are preparation process complexity, problems at high cost.
In conclusion although the present invention has been disclosed above in the preferred embodiment, but above preferred embodiment is not to limit
The system present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention
Decorations, therefore protection scope of the present invention subjects to the scope of the claims.
Claims (10)
1. a kind of semi-transparent photomask board, for etching photoresist, including transparent area, shading region and semi-opaque region, feature exist
In the semi-transparent photomask board includes:
Substrate；
The light shield layer for being disposed on the substrate and being located in shading region；
The spectral modulation layer for being disposed on the substrate and being located in semi-opaque region, for first wave length will to be located in exposure irradiation light
Light in range is converted into the light of second wave length range, and the light within the scope of the second wave length cannot excite photoresist to send out
Raw polymerization reaction.
2. semi-transparent photomask board as described in claim 1, which is characterized in that the spectral modulation layer is rare earth compounding doping
Transparent membrane.
3. semi-transparent photomask board as claimed in claim 2, which is characterized in that in the spectral modulation layer, the rare earth is matched
The doping parameters that object is closed in different location are different.
4. semi-transparent photomask board as claimed in claim 3, which is characterized in that doping of the rare earth compounding in different location
Density is different.
5. semi-transparent photomask board as claimed in claim 4, which is characterized in that the doping density of the rare earth compounding, from institute
Successively decrease to the centre of the spectral modulation layer on the both sides for stating spectral modulation layer.
6. semi-transparent photomask board as claimed in claim 4, which is characterized in that the doping density of the rare earth compounding, from institute
The both sides for stating spectral modulation layer are incremented by the centre of the spectral modulation layer.
7. semi-transparent photomask board as claimed in claim 3, which is characterized in that in the spectral modulation layer, there is at least two
The thickness of the spectral modulation layer of a position is different.
8. semi-transparent photomask board as claimed in claim 7, which is characterized in that the thickness of the spectral modulation layer, from the light
Successively decrease to the centre of the spectral modulation layer on the both sides of spectrum modulating layer.
9. semi-transparent photomask board as claimed in claim 7, which is characterized in that the thickness of the spectral modulation layer, from the light
The both sides for composing modulating layer are incremented by the centre of the spectral modulation layer.
10. semi-transparent photomask board as described in claim 1, which is characterized in that spectral modulation layer part covers the screening
Photosphere.
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| CN201910440026.0A CN110209010B (en) | 2019-05-24 | 2019-05-24 | Semi-transparent mask plate |
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| CN111308854A (en) * | 2019-11-14 | 2020-06-19 | Tcl华星光电技术有限公司 | Mask plate and manufacturing method thereof |
| CN114911129A (en) * | 2022-07-11 | 2022-08-16 | 上海传芯半导体有限公司 | Mask base plate, photomask plate and preparation method thereof |
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