CN104656369A - Optical Mask And Method For Manufacturing Substrate Using Optical Mask - Google Patents
Optical Mask And Method For Manufacturing Substrate Using Optical Mask Download PDFInfo
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- CN104656369A CN104656369A CN201410658927.4A CN201410658927A CN104656369A CN 104656369 A CN104656369 A CN 104656369A CN 201410658927 A CN201410658927 A CN 201410658927A CN 104656369 A CN104656369 A CN 104656369A
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- photomask
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- black matrix
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
Abstract
The present invention provides an optical mask and a method for manufacturing a substrate using the optical mask. The optical mask form a line pattern possessing a precise part of which the line width is between 2 micrometers and 10 micrometers by utilizing the photolithography while restraining the increase in the equipment investment and the reduction in the production efficiency. The optical mask is used to form the line pattern possessing the precise part of which the line width is between 2 micrometers and 10 micrometers and the surrounding area surrounding the line pattern, wherein the optical mask possesses a shading part, a semi-light transmission part corresponding to the above line pattern, a light transmission part surrounding the above shading part and the above semi-light transmission part and corresponding to the above surrounding area, wherein the width of the above semi-light transmission part is wider than the width of the above precise part of the above line pattern.
Description
Technical field
The present invention relates to and can form fine pattern by lithoprinting on substrate, particularly there is the photomask of the line pattern of the fine portion of live width 2 μm ~ 10 μm and employ the manufacture method of substrate of this photomask.
Background technology
The technology forming pattern by lithoprinting on substrate obtains to be popularized widely, in recent years, expects to be formed to have the line pattern that live width is the fine portion of less than 10 μm consumingly.
To this, illustrate for the field of display device, in recent years, the various display device being representative with liquid crystal indicator, plasm display device, organic EL display practical obtains prevailing.Wherein, the color filter used in liquid crystal display cells for the display color of liquid crystal indicator has following color filter: have corresponding with each pixel electrode about 1 μm of thick thin three primary colors filtrator (red filtrator, green filtrator and blue filtrator) on the transparent substrate, the contrast not spilling consequently liquid crystal display in order to incident light from the gap between each filtrator reduces, and arranges the black matrix as shading light part between each filtrator.
This black matrix is the part not participating in showing, that is, its shading carrying out in all directions to the gap etc. between the source electrode distribution of liquid crystal display cells, between pixel electrode and source electrode distribution.Herein, in order to make liquid crystal display become clear, wishing the shading light part as far as possible reduced based on black matrix, namely the live width of black matrix being become more meticulous.
In the past, as the record of following shown patent documentation 1, the black matrix of color filter manufactured in the following order.
First, filter substrate arranges the photosensitive material of minus.Next, keep preset distance that photomask is set with this photosensitive material, carry out the exposure of photosensitive material across this photomask.Further, by the photosensitive material development after exposure, exposed portion is formed as the black matrix of color filter.
Now, particularly in order to make liquid crystal display become clear, requiring to become more meticulous to the black matrix of color filter, specifically, requiring to make the width of black matrix be the scope of 2 μm ~ 10 μm.Therefore, can thinking, by forming fine pattern at photomask in above-mentioned photomask, the live width of the exposure area in the photosensitive material on filter substrate can be made to attenuate.
Prior art document
Patent documentation
Patent documentation 1: No. 2000-199967, Japanese Unexamined Patent Publication
Summary of the invention
Invent problem to be solved
But, in the manufacture of color filter, main flow is, by by photomask with arranged by the interval of sensitive substrate and very littlely irradiate light, be used in the proximity printing mode of transfer mask pattern on substrate, thus by the disposable exposure of large-area photosensitive material being disposed in one side on substrate.Specifically, by the light for exposing of the light source irradiation wavelength 365nm (i line) such as mercury vapor lamp ~ wavelength 436nm (g line), the photomask configured through the gap that distance substrate is certain exposes.Therefore, as mentioned above, if form fine pattern at the photomask of photomask, then the impact of the diffraction of the light of pattern edge becomes large, reduces the exposure of photosensitive material.So light quantity does not reach the threshold value for making photosensitive material photosensitive, the degree of cure of photosensitive material reduces, and there is the problem that resolution reduces.
For the problem that above-mentioned resolution reduces, consider and do not use proximity printing, but use projection exposure that the technology in the past manufactured as LSI is developed, that have employed lens projects stepping and mirror surface projection stepping (MPA:MirrorProjection Aligner).Can further consider that the opening number (NA) of exposure machine expands, exposes the short wavelengthization of wavelength (λ) and the application of phase shifting mask of light.But applying these technology needs huge investment and technological development, and production efficiency also can reduce, and therefore applies these technology and is not easy.
In addition, in order to increase the exposure in lithoprinting operation, needing the output power of the light source improving exposure machine or increasing the time shutter, the additional investment of plant modification etc. and the reduction of production efficiency can be caused, therefore realizing being difficult to.
It should be noted that, when increasing exposure, along with the increase of the exposure to photosensitive material, also create following problems: the live width of the black matrix of solidification broadens, becoming more meticulous of black matrix cannot be realized.
So, expect not carry out huge additional investment and do not damage production efficiency to attenuate to the live width of the black matrix making color filter.
As mentioned above, the object of this invention is to provide and a kind ofly can lithoprinting be utilized to form the photomask with the line pattern of the fine portion of live width 2 μm ~ 10 μm and the manufacture method of substrate employing this photomask while the reduction of the increase of suppression equipment investment and production efficiency.
Solve the means of problem
For solving an embodiment of the photomask of the present invention of above-mentioned problem be, a kind of photomask, it is to form line pattern and around the neighboring area of this line pattern and the photomask used, this line pattern has the fine portion that live width is 2 μm ~ 10 μm, it is characterized in that, this photomask has light shielding part, the semi light transmitting part corresponding with above-mentioned line pattern and around above-mentioned light shielding part and above-mentioned semi light transmitting part and the transmittance section corresponding with above-mentioned neighboring area, and the width of above-mentioned semi light transmitting part is wider than the width of the above-mentioned fine portion of above-mentioned line pattern.
According to the present embodiment, the width of each semi light transmitting part corresponding with line pattern is wider than the width of each line pattern, even if the diffraction producing light can be used thus also to obtain the region of the sufficient light quantity (namely having contrast) for making photosensitive material photosensitive, and, use semi-transparent film, the line pattern of the fine portion of the width desired by having in the wide 2 μm ~ scope of 10 μm can be formed thus to the exposure light amount of area illumination forming line pattern by adjustment, on the other hand, transmittance section is irradiated to the light of abundant exposure light amount, positively can form the neighboring area around line pattern.
As mentioned above, according to the present embodiment, only change photomask, do not change to the equipment that the exposure device of the costliness used in semiconductor applications just can continue to use existing production efficiency high.That is, while the reduction of the increase of suppression equipment investment and production efficiency, positively can be formed and there is the line pattern of fine portion and the neighboring area around this line pattern of live width 2 μm ~ 10 μm.
The feature of other embodiments of the manufacture method of photomask of the present invention is, further, the width of the fine portion of above-mentioned line pattern is set to Wb, when the width of above-mentioned semi light transmitting part is set to Ws, above-mentioned Wb and Ws meets the relation of 1.2≤Ws/Wb≤3.
According to the present embodiment, if the scope of the width dimensions of semi light transmitting part within more than 1.2 times 3 times of the width dimensions of the fine portion of line pattern, then action effect as described above can positively be produced.
The feature of other embodiments of the manufacture method of photomask of the present invention is, further, above-mentioned photomask uses in proximity printing.
According to the present embodiment, owing to exposing in the region that can obtain abundant exposure light amount (there is contrast), therefore, even if when the variation of proximity printing gap, the deviation of the live width of line pattern also can be suppressed.
The feature of other embodiments of the manufacture method of photomask of the present invention is, further, above-mentioned light shielding part is spaced from each other and is aligned to rectangular, and the region between adjacent above-mentioned light shielding part is formed with above-mentioned semi light transmitting part.
By using as the present embodiment, light shielding part is spaced apart and be aligned to rectangular, that region between adjacent light shielding part is formed with semi light transmitting part photomask, the line pattern with fine portion can be formed and be aligned to cancellate pattern, can be applicable to display device be representative technical field widely in.
The feature of other embodiments of the manufacture method of photomask of the present invention is, further, above-mentioned line pattern is black matrix.
According to the present embodiment, industrial community can be provided strongly to expect wide 2 μm ~ black matrix become more meticulous of 10 μm.
An embodiment of the manufacture method of color filter of the present invention is, a kind of manufacture method of color filter, in the method, development treatment is carried out after being exposed by the photosensitive material be disposed on filter substrate, thus form the black matrix with the fine portion of live width 2 μm ~ 10 μm, with the neighboring area around this black matrix, it is characterized in that, this manufacture method possesses following operation: irradiate the light for exposing to photomask, thus by operation that above-mentioned photosensitive material exposes, for this photomask, by carrying out patterning respectively to the photomask be arranged on mask substrate and semi-transparent film and arrange by light shielding part, the semi light transmitting part corresponding with above-mentioned black matrix, and around above-mentioned light shielding part and above-mentioned semi light transmitting part and the pattern transferring that forms of the transmittance section corresponding with above-mentioned neighboring area, and the photomask that the width of above-mentioned semi light transmitting part is wider than the width of the above-mentioned fine portion of above-mentioned black matrix, with, by the above-mentioned photosensitive material development after exposure, thus form the operation of above-mentioned black matrix.
According to the present embodiment, the width of the semi light transmitting part of photomask is wider than the width of the fine portion of black matrix, positively can form color filter thus, and this color filter comprises the black matrix of fine portion and the neighboring area around black matrix with live width 2 μm ~ 10 μm.
Invention effect
Utilize photomask of the present invention, can suppression equipment investment increase and production efficiency reduction while, positively form the line pattern of fine portion and the neighboring area around this line pattern with live width 2 μm ~ 10 μm, further by the manufacture method of the present invention employing this photomask, can suppression equipment investment increase and production efficiency reduction while, positively manufacture color filter, this color filter comprises the black matrix of fine portion and the neighboring area around this black matrix with live width 2 μm ~ 10 μm.
Accompanying drawing explanation
Fig. 1 is the figure of the pattern transferring from top view photomask.
In Fig. 2, a () is the sectional view cut off by the photomask X-X ' line of Fig. 1, b () is the partial enlarged drawing of this sectional view, (c) is the sectional view that the black matrix using this photomask to be formed on filter substrate by proximity printing is shown.
Fig. 3 is the figure of the concrete example of the manufacture method that photomask of the present invention is shown.
Fig. 4 is the figure of the schematic formation of the exposure device that proximity printing is shown.
Fig. 5 illustrates to verify effect based on photomask of the present invention and the figure of the result of the simulation carried out.
Fig. 6 is the figure of an example of the filter substrate that liquid crystal indicator is shown.
Embodiment
The present invention relates to for being formed fine pattern by lithoprinting on substrate, particularly forming the manufacture method of the photomask with the line pattern of the fine portion of live width 2 μm ~ 10 μm and the substrate employing this photomask.The substrate manufactured by photomask of the present invention is used to be applicable to the various equipment etc. associated by liquid crystal indicator, plasm display device, the organic EL display various display device that are representative, MEMS (Micro Electro Mechanical Systems).
Wherein, in the following description, to be applicable to the situation of color filter substrate for liquid crystal display device so that the present invention to be described.
An embodiment of photomask of the present invention is the photomask for the formation of black matrix, wherein, be used in the negative photosensitive material being exposed the one side arranging of substrate as color filter substrate for liquid crystal display device, by proximity printing, form the described black matrix with the fine portion of 2 μm ~ 10 μm after development.
Herein, compared to the closely sealed exposure making photomask contact with transfer printing body, proximity printing has the not contaminated advantage of mask, and, compared to the reduced projection exposure using lens projects step-by-step system, mirror surface projection step-by-step system etc., proximity printing does not need the optical system of great number, therefore has the advantage that can reduce installation cost.Photomask in present embodiment uses in proximity printing, thus can form the black matrix of color filter imperceptibly.
In the color filter formation substrate of liquid crystal indicator, be provided with each pixel of R (red), G (green), B (indigo plant) thin red filtrator, green filtrator and the blue filtrator that the thickness corresponding with each pixel electrode is about 1 μm accordingly on the transparent substrate.Be arranged with black matrix between each filtrator, thus incident light can not spill from the gap of each filtrator so that the contrast of liquid crystal display reduces.
Fig. 6 is an example of color filter substrate for liquid crystal display device, and it possesses the pixel portion GS that is made up of color filter (R, G, B) and black matrix BM and the neighboring area BW around pixel portion.These formations can be formed on filter substrate by using the photomask shown in Fig. 1 described later.
As shown in Figure 6, black matrix BM according in parallel longitudinal extension and spaced each 1st line portion L1 with laterally to extend in parallel and spaced each 2nd line portion L2 arranges across and many bars of lines are crossed as cancellate mode and are formed on the whole.The periphery of black matrix BM forms the neighboring area BW around this black matrix BM.In present embodiment, the live width forming the 1st line portion L1 of black matrix BM is 2 μm ~ 10 μm, the live width of the 2nd line portion L2 is 8 μm ~ 30 μm.
Next, Fig. 1 illustrates an embodiment of photomask of the present invention.Fig. 1 is the figure of the pattern transferring from top view photomask, shows a part of region of photomask.In Fig. 2, a () is the sectional view after being cut off by the photomask X-X ' line of Fig. 1, b partial enlarged drawing that () is this sectional view, (c) is for illustrating the sectional view of the black matrix using this photomask to be formed on filter substrate by proximity printing.Fig. 3 is the figure of the concrete example of the manufacture method that photomask of the present invention is shown.Fig. 4 is the figure of the schematic formation of the exposure device that proximity printing is shown.Fig. 5 illustrates to verify effect based on photomask of the present invention and the figure of the result of the simulation carried out.
As shown in Figure 1, the photomask of present embodiment is the photomask of 3 gray scales being provided with the pattern transferring be made up of light shielding part S, semi light transmitting part H and transmittance section Q.Photomask is by carrying out patterning respectively to the photomask be arranged on mask substrate Qz and semi-transparent film; and be provided with pattern transferring T, this pattern transferring T by not through exposure light light shielding part S, make a part for exposure light through wire semi light transmitting part H and around light shielding part S and semi light transmitting part H and make exposure light essence all through ring-type transmittance section Q form.The corresponding above-mentioned black matrix BM of semi light transmitting part H.Ring-type transmittance section Q is significantly formed wider than the mode of semi light transmitting part H with its width, corresponding with above-mentioned neighboring area BW.The pattern transferring of photomask is below described.
As shown in Figure 1, photomask of the present invention has light shielding part S, semi light transmitting part H and ring-type transmittance section Q, this light shielding part S be formed as rectangle respectively and carry out matrix arrangement at interval, each semi light transmitting part H is arranged in clathrate, this ring-type transmittance section Q around light shielding part S and semi light transmitting part H according to the mode in this light shielding part of landfill S gap each other.Ring-type transmittance section Q is formed according to the mode that width is wider than each semi light transmitting part H.
In photomask shown in Fig. 1, the width of the semi light transmitting part H of vertical and horizontal is different.That is, as shown in Figure 1, each semi light transmitting part H is made up of each 1st semi light transmitting part H1 corresponding with the 1st line portion L1 of black matrix BM and each 2nd semi light transmitting part H2 corresponding with the 2nd line portion L2 of black matrix BM.1st semi light transmitting part H1 and the 2nd semi light transmitting part H2 is orthogonal each other, and each 2nd semi light transmitting part H2 is formed according to the mode that width is wider than each 1st semi light transmitting part H1.And then as shown in Figure 2, the width of the 1st semi light transmitting part H1 is wider than the 1st line portion L1 of black matrix BM.Although not diagram, the width of the 2nd semi light transmitting part H2 is wider than the 2nd line portion L2 of black matrix BM.Photomask of the present invention is like this effective when the black matrix that the live width manufacturing vertical and horizontal is different.
Further illustrate the embodiment of photomask of the present invention.As shown in Fig. 2 (a); the photomask touched with mask substrate Qz is had by patterning on mask substrate Qz; thus be formed as each light shielding part S of rectangle and each opening K and alternately arrange; the semi-transparent film of patterning is set accordingly with each opening K, defines the 1st semi light transmitting part H1 (semi light transmitting part H).In the outside of light shielding part S and semi light transmitting part H, photomask and semi-transparent film are removed and expose mask substrate surface, thus form transmittance section Q.
As shown in Figure 2, light shielding part S only can be formed with photomask on mask substrate Qz, although not diagram, also can on mask substrate Qz lamination photomask and semi-transparent film.It should be noted that, in the example shown in Fig. 2, in the mode corresponding with each opening K by semi-transparent film patterning, but not necessarily like this patterning.That is, also can as shown in Fig. 3 (f), only to remove the mode in the region corresponding with transmittance section of semi-transparent film by semi-transparent film patterning.
Shown in Fig. 2 (c) after the 1st line portion BM1 as the Fig. 2 (b) after the 1st semi light transmitting part H1 part of photomask being amplified and the black matrix that formed on filter substrate accordingly amplifies, the width Ws of the 1st semi light transmitting part H1 is wider than the width W b of the 1st line portion BM1 of the black matrix formed on filter substrate.
As shown in the curve map of Fig. 5, by exposure light more light intensity (light quantity) more reduction close to the end of opening under the impact of the diffraction of light of the peristome of photomask.Therefore, if make the width of the 1st semi light transmitting part H1 (width of opening K) be the size identical with the width W b of the 1st line portion BM1 of the black matrix formed, then near the end of opening K, the impact of the diffraction of light becomes large, reduces the exposure of photosensitive material.Therefore, the light quantity near the end of opening K does not reach the threshold value for making photosensitive material photosensitive, and the degree of cure of photosensitive material reduces, and the width of the black matrix formed is less than Wb.
On the other hand, as shown in the embodiment, the width Ws of the 1st semi light transmitting part H1 is wider than the width W b of the 1st line portion BM1 of the black matrix formed, namely, if more than the degree in the region that width to the above-mentioned photosensitive material widening opening K cannot be fully photosensitive, expose even if the diffraction producing light then can be used also to obtain enough regions (namely by ectocentral region) for the light quantity making photosensitive material photosensitive.Further, by using semi-transparent film, the black matrix of the 1st line portion BM1 exposure light amount of area illumination forming black matrix being formed to the width had desired by the wide 2 μm ~ scope of 10 μm suitably can be adjusted.That is, by suitably selecting the transmitance of the light of semi-transparent film, the width dimensions of the part that adjustable photosensitive material is fully photosensitive forms the 1st line portion BM1 of desired width.
On the other hand, if the exposure light amount on the region that only adjustment is corresponding with the 1st line portion BM1 of black matrix, then by such as reducing the output power of light source or arranging filtrator, the light quantity being incident to photomask can also be reduced.But in this situation, the photosensitive light quantity on the Q of transmittance section does not reach the threshold value for making photosensitive material photosensitive, can produce the problem that suitably can not form neighboring area BW.Therefore, by using semi-transparent film, both wide 2 μm ~ the 1st line portion BM1 of 10 μm and neighboring area BW positively could be formed.
It should be noted that, if the width Ws of the 1st semi light transmitting part H1 is in scope described later, then sometimes made the strength-enhanced of exposure light by the effect of diffraction.Under such circumstances, owing to also fully can obtain exposing light intensity in semi light transmitting part, therefore the 1st line portion BM1 and neighboring area BW all can suitably be solidified.
As shown in the embodiment, there is following action effect: when (the having contrast) region that can obtain abundant exposure light amount exposes, even if be the situation of the separation fluctuation between photomask and filter substrate, the deviation of the live width of black matrix also can be suppressed.About this point, after use Fig. 5 to be described.
About the width W b of the width Ws of the 1st semi light transmitting part H1 and the 1st line portion BM1 of black matrix, if further describe, preferred Ws, Wb meet the relation of following formula (1).
Formula (1); 1.2≤Ws/Wb≤3
By meeting above-mentioned formula (1), even if (the having contrast) region that the diffraction producing light can be used also can to obtain abundant photosensitive light quantity exposes, and, by using semi-transparent film, light quantity that filter substrate is irradiated suitably can be adjusted to form the 1st line portion BM1 of the width desired by the wide 2 μm ~ scope of 10 μm.And then, adjust the light quantity defining the area illumination of the 1st line portion BM1 to using semi-transparent film, therefore, while positively forming the 1st line portion BM1, by irradiating sufficient light quantity to transmittance section Q, the neighboring area BW around pixel portion GS also positively can be formed.
On the other hand, when Ws/Wb value lower than 1.2, under the impact of the diffraction of light, likely can not get the width dimensions of the 1st line portion BM1 of predetermined black matrix.In addition, compared with the exposure being incident to photomask, when being reduced by the light quantity of opening K, further owing to only reducing the part of the transmitance of semi-transparent film through light quantity, therefore, there is the shortcoming that the production efficiency caused by the increase of exposure (time shutter) reduces in actual process.
On the other hand, when the value of Ws/Wb is more than 3, even if make opening K be semi-permeable state, because spatial image width is originally wide, be therefore also difficult to the 1st line portion BM1 forming black matrix.
If enumerate other numerical examples, about the width W b of the width Ws of the 1st semi light transmitting part H1 and the 1st line portion BM1 of black matrix, as described below.That is, the width W b of the 1st line portion L1 of black matrix BM filter substrate formed is 2 μm ~ 10 μm, and thus the width Ws of the 1st semi light transmitting part H1 is 2.4 μm ~ 30 μm.
In addition, as the transmitance making exposure light transmission of semi-transparent film, be preferably the scope of 30 ~ 70%, be more preferably the scope of 40 ~ 60%.As the distance between photomask and filter substrate, be preferably adjusted to the scope of 40 μm ~ 300 μm, be more preferably adjusted to the scope of 100 μm ~ 150 μm.
The mask substrate of the photomask of formation present embodiment, semi-transparent film, photomask are described in detail.As mask substrate, such as synthetic quartz, soda-lime glass, alkali-free glass etc. can be used to be transparent substrate to exposure light.The exposure light used in photomask of the present invention is the continuous light in the scope of wavelength 300nm ~ 450nm with wide spectrum.
Semi-transparent film for raw material, such as, is the film of molybdenum silicide (MoSi), tantalum silicide (TaSi), Titanium silicide (TiSi), tungsten silicide (WSi) and their oxide, nitride, oxides of nitrogen etc. with the metal silicide containing metal and silicon.In the present embodiment, semi-transparent film is the film of the molybdenum silicide of lamination on photomask.Semi-transparent film is preferably MoSi film, MoSi
2film, MoSi
4film, but also can be MoSiO film, MoSiN film, MoSiON film etc.
The material that photomask by the chromium (Cr) such as having etching selectivity to metal silicide is and being formed on substrate.Photomask is such as CrN film, CrC film, CrCO film, CrO film, CrON film or their laminated films.
One example of the manufacture method of the photomask shown in Fig. 3 shown in Fig. 1.
As shown in Fig. 3 (a), mask substrate Qz forms photomask sm and photosensitive material film km1 successively.Photosensitive material can use resist, the such as eurymeric resist of the etching mask become for patterning photomask.At this, be described using the situation of eurymeric resist.
At photosensitive material film km1, to forming the position irradiating electron beam of opening or laser and after exposing, by photosensitive material film immersion in developer solution, the photosensitive material film of the part that electron beam or laser are irradiated dissolves, thus as shown in Fig. 3 (b), eliminate the part being equivalent to semi light transmitting part and transmittance section, and define pattern km1 ' at photosensitive material film.
Further, as shown in Fig. 3 (c), the pattern km1 ' of above-mentioned photosensitive material film is used as mask, photomask is utilized while such as etching removing, peel off the photosensitive material film no longer needed, thus form opening at photomask.
Then, as shown in Fig. 3 (d), photomask S is after patterning formed successively semi-transparent film hm, photosensitive material film km2.
Next, carrying out to only remove the photosensitive material film corresponding with transmittance section Q the exposure and the development that utilize electron beam or laser, as shown in Fig. 3 (e), forming pattern km2 ' at photosensitive material film.At this, carry out patterning according to the mode only removing the region corresponding with the transmittance section Q of semi-transparent film, but also can carry out the patterning of semi-transparent film as shown in Figure 2 according to the mode corresponding with each opening.
Thereafter, as shown in Fig. 3 (f), the pattern km2 ' of this photosensitive material film is used as mask, while being etched by semi-transparent film, peel off the photosensitive material film no longer needed.
Formation like this is by the pattern transferring of the photomask patterning closely sealed with substrate, and this pattern transferring is by exposure light being carried out to each light shielding part S of shading, the semi light transmitting part H being provided with the semi-transparent film that each opening of being formed the patterning by photomask covers and the transmittance section Q that exposes mask substrate surface is formed.
It should be noted that, the semi-transparent film of the patterning after terminating about the operation shown in Fig. 3 (f), the semi-transparent film of the part overlapping with photomask can left behind (state of Fig. 3 (f)) at that, also can removing (form shown in Fig. 2) after the surplus of deduction correction error.
For photomask of the present invention, use the exposure device of the proximity printing shown in Fig. 4, proximity printing is carried out to the negative photosensitive material coated on the filter substrate of liquid crystal display cells, negative photosensitive material solidification thus after exposure, forms Fig. 2 (c) and the black matrix shown in Fig. 6.
Exposure device 10 shown in Fig. 4 possesses: the light source cell 20 launched discharge lamp, focus lamp, the mirrors such as the extra-high-pressure mercury vapour lamp of the ultraviolet light containing wavelength 300nm ~ 450nm and be made up of various lens etc.Further, the light containing ultraviolet light that discharge lamp radiates penetrates from light source cell 20 via above-mentioned optics.Exposure device 10 possesses mounting and the operation thing (ワ ー Network such as the mask platform 30 of stationary photomask M, fixing filter substrate further) operation post 40 of (transfer printing body) WK, the gap between adjustment mask and operation thing gap adjusting mechanism 50 and adjust the XYZ θ platform 60 of operation object location.
The manufacture method of the color filter being formed black matrix by photomask of the present invention on filter substrate is described.In the manufacture method of color filter of the present invention, the negative photosensitive material coated on filter substrate is exposed, make photosensitive material photosensitive and develop after solidification, thus forming the black matrix shown in Fig. 6.
First, in the exposure device 10 shown in Fig. 4, carry photomask M of the present invention, adjustment photomask M and as transfer printing body filter substrate WK between gap G be the scope of 40 μm ~ 300 μm, be preferably the scope of 100 μm ~ 150 μm.Next, the methods such as slot coated are utilized to be coated on filter substrate by photosensitive material.
Herein, photosensitive material is negative photosensitive material, can use following material.
As negative photosensitive material of the present invention, the photoresist being dispersed with pigment, carbon, metallic particles etc. can be considered.For as the material that the patterning based on pigment dispersion method is known, omit detailed description.If illustrate briefly, as above-mentioned photosensitive material, preferably containing colorant and the photosensitive material of monomer with reactive functional groups; Or containing polymkeric substance, by exposing the photosensitive material of Photoepolymerizationinitiater initiater and the solvent making them be polymerized.In addition, also the additive such as spreading agent, surfactant can be contained.As colorant, use pigment, carbon granule, metallic particles etc.
Use the exposure device shown in Fig. 4, across the photomask of the present invention shown in Fig. 1, from the mask substrate side of photomask, exposure light is irradiated to the photosensitive material coated filter substrate, carry out proximity printing.Exposure light is irradiated to the photosensitive material coating filter substrate via the semi light transmitting part of photomask, make the exposure illumination of photosensitive material penetrate regions curing.Next, photosensitive material is developed, as shown in Fig. 2 (c), Fig. 6, filter substrate forms black matrix.
(result of the simulation of photomask of the present invention)
Then, in order to verify other effects of the present invention, as followsly to simulate.Fig. 5 illustrates the result of simulation.The condition of simulation is as described below.
< embodiment: photomask > of the present invention
The width of semi light transmitting part; 11.0 μm
The transmitance of semi-transparent film; 60%
Herein, the width of semi light transmitting part refers to the width being provided with the opening of semi-transparent film represented by the Ws of Fig. 2.
< comparative example: existing binary photomask >
The width of transmittance section; 6.0 μm
Semi-transparent film; Nothing
Herein, binary photomask refers to the photomask patterning on mask substrate, thus on mask substrate, form the photomask of 2 gray scales of light shielding part and transmittance section.
The identical item > of < embodiment and comparative example
The wavelength of exposure light; The mixing of wavelength 313nm and wavelength 365nm
Proximity printing gap; 75 μm, 100 μm, 125 μm, 150 μm, 175 μm, 200 μm, 225 μm 7 groups
Herein, proximity printing gap refers to the pattern transferring of photomask and the distance of machined object.
Fig. 5 illustrates in each example of embodiment and comparative example the light intensity distributions through light when proximity printing gap is changed in above-mentioned 7 groups of 75 μm ~ 225 μm.Based on the analog result of Fig. 5, calculate proximity printing gap be 85 μm ~ 115 μm (centered by 100 μm, proximity printing gap ± 15%) scope in the change ratio (slope of curve map) of light intensity of each example of embodiment and comparative example, the change ratio of the light intensity of the photomask of acetonideexample is 8.3%, and the change ratio of the light intensity of the photomask of comparative example is 28.2%.That is, when the known change of the gap in proximity printing, compared with the photomask of comparative example, the intensity variation ratio of the photomask of embodiment is little.
So, the manufacture method employing the color filter of photomask of the present invention is effective especially when carrying out proximity printing, and to have width wider than the 1st line portion of the black matrix that filter substrate is formed and make the semi light transmitting part of the exposure light transmission of a part for described photomask.That is, for the manufacture method of color filter of the present invention, even if when various change is carried out in proximity printing gap described above, the change ratio exposing to the light intensity of photosensitive material is also little.Therefore, even if owing to also lacking, so the deviation of the live width in the 1st line portion of the black matrix that filter substrate is formed can be suppressed the change of the light intensity of photosensitive material when various change is carried out in proximity printing gap.
Symbol description
10 exposure devices
20 light source cells
30 mask platform
40 operation posts
50 gap adjusting mechanisms
60 XYZ θ platforms
Claims (6)
1. a photomask, it is to form line pattern and around the neighboring area of this line pattern and the photomask used, this line pattern has the fine portion that live width is 2 μm ~ 10 μm, and the feature of above-mentioned photomask is,
This photomask has light shielding part, the semi light transmitting part corresponding with above-mentioned line pattern and around above-mentioned light shielding part and above-mentioned semi light transmitting part and the transmittance section corresponding with above-mentioned neighboring area,
The width of above-mentioned semi light transmitting part is wider than the width of the above-mentioned fine portion of above-mentioned line pattern.
2. photomask as claimed in claim 1, is characterized in that, be set to Wb at the width of the fine portion by above-mentioned line pattern, when the width of above-mentioned semi light transmitting part is set to Ws, above-mentioned Wb and Ws meets following relation:
1.2≤Ws/Wb≤3。
3. photomask as claimed in claim 1 or 2, it is characterized in that, this photomask uses in proximity printing.
4. the photomask as described in any one of claims 1 to 3, is characterized in that, above-mentioned light shielding part is spaced from each other and is aligned to rectangular, and the region between adjacent above-mentioned light shielding part is formed with above-mentioned semi light transmitting part.
5. the photomask as described in any one of Claims 1 to 4, is characterized in that, above-mentioned line pattern is black matrix.
6. the manufacture method of a color filter, in the method, development treatment is carried out after being exposed by the photosensitive material be disposed on filter substrate, thus form black matrix and the neighboring area around this black matrix, this black matrix has the fine portion that live width is 2 μm ~ 10 μm, it is characterized in that, this manufacture method possesses following operation:
Light for exposing is irradiated to photomask, thus by operation that above-mentioned photosensitive material exposes, for this photomask, be provided with by carrying out patterning respectively to the photomask be arranged on mask substrate and semi-transparent film by light shielding part, the semi light transmitting part corresponding with above-mentioned black matrix and around above-mentioned light shielding part and above-mentioned semi light transmitting part and the pattern transferring that forms of the transmittance section corresponding with above-mentioned neighboring area, and the width of above-mentioned semi light transmitting part is wider than the width of the above-mentioned fine portion of above-mentioned black matrix; With
By the above-mentioned photosensitive material development after exposure, thus form the operation of above-mentioned black matrix.
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| JP2013238676A JP6282847B2 (en) | 2013-11-19 | 2013-11-19 | Photomask and method of manufacturing substrate using the photomask |
| JP2013-238676 | 2013-11-19 |
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| CN (1) | CN104656369B (en) |
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| CN108196421A (en) * | 2017-12-14 | 2018-06-22 | 深圳市路维光电股份有限公司 | Gray level mask plate production method |
| CN108563098A (en) * | 2018-01-17 | 2018-09-21 | 京东方科技集团股份有限公司 | A kind of mask plate and preparation method thereof |
| CN109001957A (en) * | 2017-06-06 | 2018-12-14 | Hoya株式会社 | The manufacturing method of photomask and display device |
| CN111610657A (en) * | 2020-06-22 | 2020-09-01 | 京东方科技集团股份有限公司 | Preparation method of display substrate, display panel and display device |
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| CN113544589A (en) * | 2019-03-04 | 2021-10-22 | 株式会社V技术 | Light source device for exposure, exposure device and exposure method |
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Also Published As
| Publication number | Publication date |
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| TW201520682A (en) | 2015-06-01 |
| TWI620001B (en) | 2018-04-01 |
| CN104656369B (en) | 2019-08-02 |
| JP2015099247A (en) | 2015-05-28 |
| JP6282847B2 (en) | 2018-02-21 |
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