CN110205588A - A kind of PVD flexible conductive film, preparation method and its method for generating microcircuit through nano effect - Google Patents
A kind of PVD flexible conductive film, preparation method and its method for generating microcircuit through nano effect Download PDFInfo
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- CN110205588A CN110205588A CN201910500182.1A CN201910500182A CN110205588A CN 110205588 A CN110205588 A CN 110205588A CN 201910500182 A CN201910500182 A CN 201910500182A CN 110205588 A CN110205588 A CN 110205588A
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
Abstract
The invention discloses a kind of PVD flexible conductive film, preparation method and its methods for generating microcircuit through nano effect, a kind of method that PVD flexible conductive film generates microcircuit through nano effect, comprising the following steps: (1) by the laminated circuit surface for being attached to the route product that needs are processed of the conduction of manufactured flexible conductive film;(2) route of product line road damage ring or missing is detected with the charge coupled cell (CCD) that laser is equipped with;It (3) will be in the equipment for the line map input laser that need to generate;(4) make the conductor planes of flexible conductive film inspire ion by line map using laser to be attached on route product on corresponding place on line, to repair the route of product line road damage ring or missing.It does not need using mold, it is only necessary to which input needs the line map generated in laser apparatus, can directly generate the route of special-shaped product and can repair to bad route.
Description
Technical field
The present invention relates to PVD nano effect technical field, specially a kind of PVD flexible conductive film, preparation method and its thoroughly
Cross the method that nano effect generates microcircuit.
Background technique
Microcircuit refers to high density equivalent-circuit component and component, and can be used as the microelectronic component of separate piece, micro- electricity
Road can be miniature orgware, integrated circuit or integrated microcircuit.
Currently, existing microcircuit generation technique is to can not do abnormal shape by mold, template generation route and integrated circuit
Circuit, and some field location or certain section of route damage are met on the way in product line, entire finished product route can all be scrapped, expensive.
Summary of the invention
It is an object of the invention to: it is by mold, template generation route for above-mentioned existing microcircuit generation technique
And integrated circuit, it can not do special-shaped circuit, and meet some field location or certain section of route damage, entire product line on the way in product line
Lu Douhui scraps, expensive problem, and the present invention provides a kind of PVD flexible conductive film, preparation method and its imitates through nanometer
The method that microcircuit should be generated.
A kind of PVD flexible conductive film, including base and the conductive layer being deposited in base.
Further, the material of the base is zinc oxide, tin indium oxide, carbon nanotubes or graphene.
Further, the material of the conductive layer is one or several in silver, gold, copper and tin.
A kind of preparation method of PVD flexible conductive film, comprising the following steps:
(1) base material is made to flash to gas phase under vacuum conditions using physical vapour deposition (PVD) (PVD) vacuum vapour deposition
It is deposited on matrix and forms base;
(2) conductive material is melted and is mixed;
(3) physical vapour deposition (PVD) (PVD) sputter coating method is used, under vacuum conditions, passes through the common of voltage and magnetic field
Effect, bombards conductive material with the inert gas ion being ionized, is sputtered out conductive material in the form of ion
Come and be deposited in base to form conductive layer, to prepare flexible conductive film.
Further, in the step (1) evaporation evaporation source used be resistance heating, electron beam heating, laser heating,
High-frequency induction heating or electric arc heated.
Further, it is filled with argon (Ar) gas in the step (3), argon gas is made to carry out magnetic-control glow discharge, ar atmo (Ar)
It is ionized into argon ion (Ar+)。
Further, vacuum degree is 10 in the step (3)-2~10Pa, voltage are 300~1000V negative high voltage, and ion bangs
Hitting the time is 6~30min.
A kind of method that PVD flexible conductive film generates microcircuit through nano effect, comprising the following steps:
(1) by the laminated circuit surface for being attached to the route product that needs are processed of the conduction of manufactured flexible conductive film;
(2) route of product line road damage ring or missing is detected with the charge coupled cell (CCD) that laser is equipped with;
It (3) will be in the equipment for the line map input laser that need to generate;
(4) it is beaten and is penetrated in the flexible conductive film being attached on route product by the line map focus point of input using laser
Base face makes the conductor planes of flexible conductive film inspire ion by line map and is attached to corresponding place on line on route product
On, to be repaired to the route of product line road damage ring or missing.
Further, the laser that laser used is rated power 20W in the step (4).
Further, laser parameter is set as 16% in the step (4), and wavelength is set as 1064nm, and speed is set as
1600mm/s, frequency are set as 120KHz, and wire frame is set as 0.03mm.
In conclusion by adopting the above-described technical solution, the beneficial effects of the present invention are:
1. not needed using mold or template, it is only necessary to by laser and PVD nano effect in laser in the present invention
Incoming line figure or one section of route in equipment, any position that light can reach can generative circuit, for special-shaped product
Route and integrated circuit can also directly generate.
2., can be to some the bad route occurred in product, directly by laser and PVD nano effect in the present invention
Route is input in laser apparatus, light reaches corresponding position generative circuit, repairs to bad route.
Detailed description of the invention
Fig. 1 is a kind of sectional view of PVD flexible conductive film of the present invention.
In the figure, it is marked as 1- base, 2- conductive layer.
Specific embodiment
All features disclosed in this specification can be with any other than mutually exclusive feature and/or step
Mode combines.
It elaborates below with reference to Fig. 1 to the present invention.
A kind of PVD flexible conductive film, including base 1 and the conductive layer 2 being deposited in base.
Further, the material of the base 1 is zinc oxide, tin indium oxide, carbon nanotubes or graphene.
Further, the material of the conductive layer 2 is one or several in silver, gold, copper and tin.
A kind of preparation method of PVD flexible conductive film, comprising the following steps:
(1) base material is made to flash to gas phase under vacuum conditions using physical vapour deposition (PVD) (PVD) vacuum vapour deposition
It is deposited on formation base 1 on matrix;
(2) conductive material is melted and is mixed;
(3) physical vapour deposition (PVD) (PVD) sputter coating method is used, under vacuum conditions, passes through the common of voltage and magnetic field
Effect, bombards conductive material with the inert gas ion being ionized, is sputtered out conductive material in the form of ion
Come and be deposited on formation conductive layer 2 in base 1, to prepare flexible conductive film.
Further, in the step (1) evaporation evaporation source used be resistance heating, electron beam heating, laser heating,
High-frequency induction heating or electric arc heated.
Further, it is filled with argon (Ar) gas in the step (3), argon gas is made to carry out magnetic-control glow discharge, ar atmo (Ar)
It is ionized into argon ion (Ar+)。
Further, vacuum degree is 10 in the step (3)-2~10Pa, voltage are 300~1000V negative high voltage, and ion bangs
Hitting the time is 6~30min.
A kind of method that PVD flexible conductive film generates microcircuit through nano effect, comprising the following steps:
(1) conductive layer 2 of manufactured flexible conductive film is attached to the circuit surface for needing the route product processed on one side;
(2) route of product line road damage ring or missing is detected with the charge coupled cell (CCD) that laser is equipped with;
It (3) will be in the equipment for the line map input laser that need to generate;
(4) it is beaten and is penetrated in the flexible conductive film being attached on route product by the line map focus point of input using laser
1 face of base makes 2 face of conductive layer of flexible conductive film inspire ion by line map and is attached to corresponding route on route product
On position, to be repaired to the route of product line road damage ring or missing.
Further, the laser that laser used is rated power 20W in the step (4).
Further, laser parameter is set as 16% in the step (4), and wavelength is set as 1064nm, and speed is set as
1600mm/s, frequency are set as 120KHz, and wire frame is set as 0.03mm.
Embodiment 1
A kind of PVD flexible conductive film, including base 1 and the conductive layer 2 being deposited in base.
Further, the material of the base 1 is tin indium oxide.
Further, the material of the conductive layer 2 is the mixture of Jin Hexi.
A kind of preparation method of PVD flexible conductive film, comprising the following steps:
(1) base material is made to flash to gas phase under vacuum conditions using physical vapour deposition (PVD) (PVD) vacuum vapour deposition
It is deposited on formation base 1 on matrix;
(2) conductive material is melted and is mixed;
(3) physical vapour deposition (PVD) (PVD) sputter coating method is used, under vacuum conditions, passes through the common of voltage and magnetic field
Effect, bombards conductive material with the inert gas ion being ionized, is sputtered out conductive material in the form of ion
Come and be deposited on formation conductive layer 2 in base 1, to prepare flexible conductive film.
Further, evaporation evaporation source used is resistance heating in the step (1).
Further, it is filled with argon (Ar) gas in the step (3), argon gas is made to carry out magnetic-control glow discharge, ar atmo (Ar)
It is ionized into argon ion (Ar+)。
Further, vacuum degree is 10 in the step (3)-2Pa, voltage are 1000V negative high voltage, and the ion bombardment time is
30min。
A kind of method that PVD flexible conductive film generates microcircuit through nano effect, comprising the following steps:
(1) conductive layer 2 of manufactured flexible conductive film is attached to the circuit surface for needing the route product processed on one side;
(2) route of product line road damage ring or missing is detected with the charge coupled cell (CCD) that laser is equipped with;
It (3) will be in the equipment for the line map input laser that need to generate;
(4) it is beaten and is penetrated in the flexible conductive film being attached on route product by the line map focus point of input using laser
1 face of base makes 2 face of conductive layer of flexible conductive film inspire ion by line map and is attached to corresponding route on route product
On position, to be repaired to the route of product line road damage ring or missing.
Further, the laser that laser used is rated power 20W in the step (4).
Further, laser parameter is set as 16% in the step (4), and wavelength is set as 1064nm, and speed is set as
1600mm/s, frequency are set as 120KHz, and wire frame is set as 0.03mm.
Embodiment 2
A kind of PVD flexible conductive film, including base 1 and the conductive layer 2 being deposited in base.
Further, the material of the base 1 is zinc oxide.
Further, the material of the conductive layer 2 is the mixture of Jin Hexi.
A kind of preparation method of PVD flexible conductive film, comprising the following steps:
(1) base material is made to flash to gas phase under vacuum conditions using physical vapour deposition (PVD) (PVD) vacuum vapour deposition
It is deposited on formation base 1 on matrix;
(2) conductive material is melted and is mixed;
(3) physical vapour deposition (PVD) (PVD) sputter coating method is used, under vacuum conditions, passes through the common of voltage and magnetic field
Effect, bombards conductive material with the inert gas ion being ionized, is sputtered out conductive material in the form of ion
Come and be deposited on formation conductive layer 2 in base 1, to prepare flexible conductive film.
Further, evaporation evaporation source used is laser heating in the step (1).
Further, it is filled with argon (Ar) gas in the step (3), argon gas is made to carry out magnetic-control glow discharge, ar atmo (Ar)
It is ionized into argon ion (Ar+)。
Further, vacuum degree is 10 in the step (3)-1Pa, voltage are 800V negative high voltage, and the ion bombardment time is
25min。
A kind of method that PVD flexible conductive film generates microcircuit through nano effect, comprising the following steps:
(1) conductive layer 2 of manufactured flexible conductive film is attached to the circuit surface for needing the route product processed on one side;
(2) route of product line road damage ring or missing is detected with the charge coupled cell (CCD) that laser is equipped with;
It (3) will be in the equipment for the line map input laser that need to generate;
(4) it is beaten and is penetrated in the flexible conductive film being attached on route product by the line map focus point of input using laser
1 face of base makes 2 face of conductive layer of flexible conductive film inspire ion by line map and is attached on route product corresponding route position
It sets, to be repaired to the route of product line road damage ring or missing.
Further, the laser that laser used is rated power 20W in the step (4).
Further, laser parameter is set as 16% in the step (4), and wavelength is set as 1064nm, and speed is set as
1600mm/s, frequency are set as 120KHz, and wire frame is set as 0.03mm.
Embodiment 3
A kind of PVD flexible conductive film, including base 1 and the conductive layer 2 being deposited in base.
Further, the material of the base 1 is graphene.
Further, the material of the conductive layer 2 is the mixture of Jin Hexi.
A kind of preparation method of PVD flexible conductive film, comprising the following steps:
(1) base material is made to flash to gas phase under vacuum conditions using physical vapour deposition (PVD) (PVD) vacuum vapour deposition
It is deposited on formation base 1 on matrix;
(2) conductive material is melted and is mixed;
(3) physical vapour deposition (PVD) (PVD) sputter coating method is used, under vacuum conditions, passes through the common of voltage and magnetic field
Effect, bombards conductive material with the inert gas ion being ionized, is sputtered out conductive material in the form of ion
Come and be deposited on formation conductive layer 2 in base 1, to prepare flexible conductive film.
Further, evaporation evaporation source used is high-frequency induction heating in the step (1).
Further, it is filled with argon (Ar) gas in the step (3), argon gas is made to carry out magnetic-control glow discharge, ar atmo (Ar)
It is ionized into argon ion (Ar+)。
Further, vacuum degree is 10Pa in the step (3), and voltage is 500V negative high voltage, and the ion bombardment time is
15min。
A kind of method that PVD flexible conductive film generates microcircuit through nano effect, comprising the following steps:
(1) conductive layer 2 of manufactured flexible conductive film is attached to the circuit surface for needing the route product processed on one side;
(2) route of product line road damage ring or missing is detected with the charge coupled cell (CCD) that laser is equipped with;
It (3) will be in the equipment for the line map input laser that need to generate;
(4) it is beaten and is penetrated in the flexible conductive film being attached on route product by the line map focus point of input using laser
1 face of base makes 2 face of conductive layer of flexible conductive film inspire ion by line map and is attached to corresponding route on route product
On position, to be repaired to the route of product line road damage ring or missing.
Further, the laser that laser used is rated power 20W in the step (4).
Further, laser parameter is set as 16% in the step (4), and wavelength is set as 1064nm, and speed is set as
1600mm/s, frequency are set as 120KHz, and wire frame is set as 0.03mm.
Claims (10)
1. a kind of PVD flexible conductive film, which is characterized in that including base (1) and the conductive layer (2) being deposited in base.
2. a kind of PVD flexible conductive film according to claim 1, which is characterized in that the material of the base (1) is oxidation
Zinc, tin indium oxide, carbon nanotubes or graphene.
3. a kind of PVD flexible conductive film according to claim 1, which is characterized in that the material of the conductive layer (2) is
It is one or several in silver, gold, copper and tin.
4. a kind of preparation method of PVD flexible conductive film, which comprises the following steps:
(1) base material is made to flash to vapor deposition under vacuum conditions using physical vapour deposition (PVD) (PVD) vacuum vapour deposition
Base (1) is formed on matrix;
(2) conductive material is melted and is mixed;
(3) physical vapour deposition (PVD) (PVD) sputter coating method is used, under vacuum conditions, by the collective effect of voltage and magnetic field,
Conductive material is bombarded with the inert gas ion being ionized, conductive material is made to be sputtered out in the form of ion and is sunk
Product forms conductive layer (2) on base (1), to prepare flexible conductive film.
5. a kind of preparation method of PVD flexible conductive film according to claim 4, which is characterized in that in the step (1)
Evaporation evaporation source used is resistance heating, electron beam heating, laser heating, high-frequency induction heating or electric arc heated.
6. a kind of preparation method of PVD flexible conductive film according to claim 4, which is characterized in that in the step (3)
It is filled with argon (Ar) gas, argon gas is made to carry out magnetic-control glow discharge, ar atmo (Ar) is ionized into argon ion (Ar+)。
7. a kind of preparation method of PVD flexible conductive film according to claim 4, which is characterized in that in the step (3)
Vacuum degree is 10-2~10Pa, voltage are 300~1000V negative high voltage, and the ion bombardment time is 6~30min.
8. a kind of method that PVD flexible conductive film generates microcircuit through nano effect, which comprises the following steps:
(1) conductive layer (2) of manufactured flexible conductive film is attached to the circuit surface for needing the route product processed on one side;
(2) route of product line road damage ring or missing is detected with the charge coupled cell (CCD) that laser is equipped with;
It (3) will be in the equipment for the line map input laser that need to generate;
(4) base penetrated in the flexible conductive film being attached on route product is beaten by the line map focus point of input using laser
(1) face makes conductive layer (2) face of flexible conductive film inspire ion by line map and is attached on route product corresponding route position
It sets, to be repaired to the route of product line road damage ring or missing.
9. the method that a kind of PVD flexible conductive film according to claim 8 generates microcircuit through nano effect, feature
It is, laser used is the laser of rated power 20W in the step (4).
10. the method that a kind of PVD flexible conductive film according to claim 8 generates microcircuit through nano effect, special
Sign is that laser parameter is set as 16% in the step (4), and wavelength is set as 1064nm, and speed is set as 1600mm/s, frequency
It is set as 120KHz, wire frame is set as 0.03mm.
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110972406A (en) * | 2019-12-04 | 2020-04-07 | 广东工业大学 | Repair method for fine line |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001277424A (en) * | 2000-04-03 | 2001-10-09 | Mitsubishi Shindoh Co Ltd | Metallized polyimide film and method for manufacturing the same |
CN1979695A (en) * | 2006-11-22 | 2007-06-13 | 鲁东大学 | Flexible composite transparent conductive film and mfg. method |
US20120219841A1 (en) * | 2011-02-25 | 2012-08-30 | Applied Materials, Inc. | Lithium ion cell design apparatus and method |
CN105039910A (en) * | 2015-08-14 | 2015-11-11 | 陕西煤业化工技术研究院有限责任公司 | Flexible transparent conducting thin film |
CN106573424A (en) * | 2014-04-08 | 2017-04-19 | 威廉马歇莱思大学 | Production and use of flexible conductive films and inorganic layers in electronic devices |
CN106756840A (en) * | 2016-11-28 | 2017-05-31 | 深圳大学 | A kind of high-temperature flexible transparent conductive film and preparation method and application |
-
2019
- 2019-06-11 CN CN201910500182.1A patent/CN110205588A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001277424A (en) * | 2000-04-03 | 2001-10-09 | Mitsubishi Shindoh Co Ltd | Metallized polyimide film and method for manufacturing the same |
CN1979695A (en) * | 2006-11-22 | 2007-06-13 | 鲁东大学 | Flexible composite transparent conductive film and mfg. method |
US20120219841A1 (en) * | 2011-02-25 | 2012-08-30 | Applied Materials, Inc. | Lithium ion cell design apparatus and method |
CN106573424A (en) * | 2014-04-08 | 2017-04-19 | 威廉马歇莱思大学 | Production and use of flexible conductive films and inorganic layers in electronic devices |
CN105039910A (en) * | 2015-08-14 | 2015-11-11 | 陕西煤业化工技术研究院有限责任公司 | Flexible transparent conducting thin film |
CN106756840A (en) * | 2016-11-28 | 2017-05-31 | 深圳大学 | A kind of high-temperature flexible transparent conductive film and preparation method and application |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110972406A (en) * | 2019-12-04 | 2020-04-07 | 广东工业大学 | Repair method for fine line |
US11212921B2 (en) | 2019-12-04 | 2021-12-28 | Guangdong University Of Technology | Method for repairing a fine line |
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