CN110205534A - A kind of carbide chip and preparation method thereof - Google Patents
A kind of carbide chip and preparation method thereof Download PDFInfo
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- CN110205534A CN110205534A CN201910541201.5A CN201910541201A CN110205534A CN 110205534 A CN110205534 A CN 110205534A CN 201910541201 A CN201910541201 A CN 201910541201A CN 110205534 A CN110205534 A CN 110205534A
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- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
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- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
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- C22C29/005—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides comprising a particular metallic binder
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- C22C29/02—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides
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- C22C29/067—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds comprising a particular metallic binder
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- C22C29/06—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds
- C22C29/08—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds based on tungsten carbide
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Abstract
The present invention provides a kind of carbide chips and preparation method thereof, belong to field of mechanical technique.It is not high that it solves existing cutting tip versatility, has the problem of certain limitation.A kind of this carbide chip, carbide chip is using Co as Binder Phase, using tungsten carbide and titaniferous cubic phase compound as hard phase, the mass fraction of Binder Phase is 4.5wt.%~9.5wt.%, the mass fraction of hard phase is 90.5wt.%~95.5wt.%, and the mass fraction that titaniferous cubic phase compound accounts for carbide chip is 2wt.%~8wt.%；The crystal grain distribution of tungsten carbide has two peak structure, and tungsten carbide includes macrocrystalline tungsten carbide and fine grain tungsten carbide, and the mean grain size of crude crystal WC is 1.5-3.0 μm, and the mean grain size of fine-grained wc is 0.4-1.0 μm.A kind of this carbide chip has the advantages that high rigidity, toughness and intensity and cutting ability is superior stable.
Description
Technical field
The present invention relates to a kind of carbide chips more particularly to a kind of surface layer with the distribution of non-homogeneous wc grain size to lack and stand
The hard alloy coated blade of square phase gradient structure.
Background technique
The material of manufacture metal cutting tool must have very high high temperature hardness and wearability, have necessary bending resistance strong
Degree, impact flexibility and chemical inertness and good craftsmanship (machining, forging and heat treatment etc.), and be unlikely to deform.So
And material hardness is higher, toughness is lower, also i other words the hardness and toughness of material are difficult to have both simultaneously.The prior art is adopted
The performance of hard alloy, such as patent document US4277283 United States Patent (USP) text are improved with heterogeneous texture or gradient-structure
It offers and hard alloy substrate and its system that surface layer lacks cube phase structure has been disclosed in CN1079179A Chinese patent literature
Preparation Method.In the preparation of blade base surface covering, tool surface coating high rigidity coating (such as TiN, TiC, TiCN,
CrN etc.) corrosion wear, bonding abrasion and diffusive wear that can reduce blade, increase the durability of blade；And it is applied in blade face
Cover the Al2O3 coating of high rigidity it is possible to prevente effectively from oxidative wear, for example, US4490191 american documentation literature and
CN1091683A Chinese patent literature etc. discloses the preparation method of oxide coated cutting tool and various raising oxides apply
The preprocess method of layer adhesion property.But it is only individually carried out from performance of the angle to cutting tip in above-mentioned document
Optimization, cutting tip versatility is not high, has certain limitation.In order to make cutting tip that there is certain versatility and be applicable in
In various manufacture fields, it is necessary to which the microstructure and parameters index to blade base and insert coating are for further adjustments
Prepare versatility height and the superior stable cutting tip of cutting ability.
Summary of the invention
The technical problem to be solved by the present invention is to overcome the deficiencies in the prior art, provides a kind of while there is high rigidity, tough
Property and intensity and the superior stable carbide chip of cutting ability.The carbide chip is versatile, is suitble to various processing
Field, more particularly to the processing including cast iron, steel alloy, stainless steel and other metal materials.
In order to solve the above technical problems, the invention adopts the following technical scheme:
A kind of carbide chip, the carbide chip are using Co as Binder Phase, with tungsten carbide and titaniferous cube
Phase compound is 4.5wt.%~9.5wt.%, the quality of the hard phase as hard phase, the mass fraction of the Binder Phase
Score is 90.5wt.%~95.5wt.%, and the mass fraction that the titaniferous cubic phase compound accounts for carbide chip is
2wt.%~8wt.%；The crystal grain distribution of the tungsten carbide has a two peak structure, and the tungsten carbide includes macrocrystalline tungsten carbide and thin
Brilliant tungsten carbide, the mean grain size of the crude crystal WC are 1.5-3.0 μm, and the mean grain size of the fine-grained wc is 0.4-1.0 μm；
The mean grain size of the titaniferous cubic phase compound is between the fine-grained wc mean grain size and the crude crystal WC average crystal grain
Between the half of degree；The carbide chip has the titaniferous that average bond phase content is 1~2 times of nominal binder phase content vertical
The surface structure of square phase compound missing, the surface structure with a thickness of 5 μm~50 μm, Binder Phase institute in the surface structure
The C atom of dissolution and the ratio of W atom are between 0.85-0.95；Far from the core of surface layer gradient-structure in the carbide chip
The ratio of Binder Phase is dissolved in portion's tissue C atom and W atom is between 0.80-0.85.
In above-mentioned carbide chip, it is preferred that in the two peak structure of the crystal grain distribution of the tungsten carbide, a peak is situated between
Between 0.4 μm~1.0 μm, another peak is between 1.5 μm~3.0 μm.
In above-mentioned carbide chip, it is preferred that the mass ratio of the thin tungsten carbide powder and thick tungsten carbide powder is 0.3~
1.0∶1。
In order to further increase the performance of carbide chip, in above-mentioned carbide chip, it is preferred that the hard
Alloy blade matrix is equipped with fine grain laminated coating, successively includes from inside to outside:
The TiN layer of innermost layer, with a thickness of 0.1 μm~1 μm, the crystal grain of the TiN layer is equi-axed crystal, mean grain size≤
0.5μm；
One layer of TiCN layer, with a thickness of 3 μm~12 μm, the crystal grain of the TiCN layer is column crystal, and mean grain size is 0.2 μm
~1.0 μm, the draw ratio of column crystal crystal grain is greater than 5；
Outermost α-Al2O3 layers, with a thickness of 2 μm~10 μm, mean grain size is 0.2 μm~2.0 μm.
As a general technical idea, the present invention also provides a kind of preparation method of above-mentioned carbide chip,
The following steps are included:
(1) ingredient: selecting Binder Phase metal powder, titaniferous cubic phase compound and tungsten carbide powder as raw material, each raw material
Mass percent are as follows:
Binder Phase metal powder 4.5wt.%~9.5wt.%,
Titaniferous cubic phase compound 2wt.%~8wt.%, and
Tungsten carbide powder surplus,
Each material quality percentage summation is 100%,
Wherein, Binder Phase metal powder is Co metal powder；Tungsten carbide powder includes thick tungsten carbide powder and thin tungsten carbide powder, thick carbonization
The average particle size of tungsten powder is 3 μm~10 μm, and the average particle size of thin tungsten carbide powder is 0.5 μm~2.0 μm, thin tungsten carbide powder and thick carbon
The mass ratio for changing tungsten powder is 0.1~1.0: 1；
(2) it mixes powder processed: first being mixed thin tungsten carbide powder, Binder Phase metal powder and titaniferous cubic phase compound simultaneously
Pre- ball milling, is then added thick tungsten carbide powder and forming agent carries out ball milling, and drying after ball milling obtains mixture powder；
(3) compression moulding: by the mixture powder pressing forming, green compact is obtained；
(4) it is sintered:
(4.1) it takes off forming agent: under the conditions of green compact obtained by step (3) is placed in nitrogen atmosphere, being warming up to forming agent removal temperature,
To remove forming agent；
(4.2) first sintered heat insulating stages: after de- forming agent, continuing heating sintering, temperature to be sintered rise to 1320 DEG C~
At 1370 DEG C, it is passed through the Ar protective gas of 20mbar~60mbar, under an ar atmosphere heat preservation sintering 0.5h~1h；
(4.3) second sintered heat insulating stages: after the first sintered heat insulating stage, continue heating under vacuum conditions and burn
Knot, when temperature to be sintered rises to 1400 DEG C~1450 DEG C, is passed through the Ar protective gas of 30mbar~120mbar, under an ar atmosphere
Keep the temperature 0.5h~1.5h；
(4.4) the third sintered heat insulating stage: after the second sintered heat insulating stage, the CO for being passed through 5-100mbar continues to tie up
Hold former sintering temperature heat preservation 5-20min；
(4.5) the 4th sintered heat insulating stages: after the third sintered heat insulating stage, the Ar gas for being passed through 5-100bar continues to tie up
Hold former sintering temperature heat preservation 5-20min；
(4.6) it cooling stage: after the 4th sintered heat insulating stage, keeps being cooled to room temperature under Ar and CO atmosphere, finally
Obtain carbide chip.
(5) prepared by coating: prepares coating on the hard alloy cutter matrix obtained by step (4.6).
In the preparation method of above-mentioned carbide chip, it is preferred that in the step (1), the thick tungsten carbide powder
Average particle size is 5 μm~10 μm, and the average particle size of the thin tungsten carbide powder is 0.8 μm~1.2 μm, the thin tungsten carbide powder and thick
The mass ratio of tungsten carbide powder is 0.2~0.4: 1.
In the preparation method of above-mentioned carbide chip, it is preferred that in the step (5), the coating is using conventional
CVD method is prepared.
In the present invention, the titaniferous cubic phase compound can be by the carbide of a variety of single metallic elements, nitride,
Carbon nitride powder form is independently added (for example is pressed in the form of TiC, TaC, NbC, TiN, TaN, NbN, TiCN, TaCN, NbCN etc.
Added after carrying out necessary combination according to specific ingredient), be also possible to by the carbide containing two or more metallic element,
Nitride, carbonitride constitute complex chemical compound form addition (such as with (Ti, W) C, (Ta, Nb) C, (Ti, Ta, Nb) C,
The forms such as (Ti, Ta, Nb) CN are added after carrying out necessary combination according to specific ingredient), it is added preferably in the form of complex chemical compound.
Compared with the prior art, the advantages of the present invention are as follows:
1, it is 1~2 times of nominal binder phase content that carbide blade base of the invention, which has average bond phase content,
The surface structure of the surface structure of titaniferous cubic phase compound missing, the titaniferous cubic phase compound missing of high Co content can have
Inhibition extension of the CVD coating crack to intrinsic silicon of effect, this makes cutting tool have excellent cutting edge strength and shock resistance
Performance.
2, the ratio of carbide blade base of the invention to Ti in all metallic atoms of titaniferous cubic phase compound
(such as Ti/ (Ti+Ta+Nb)) and N/Ti ratio are accurately controlled, to realize institutional framework and mechanical property
It optimizes.By the way that Ti, that cubic phase can be improved is solid for the accurate control of ratio in all metallic atoms of titaniferous cubic phase compound
Bath composition uniformity, improve cubic phase solid solution and WC and between Binder Phase interface bond strength and toughness, thus
Improve the mechanical property of alloy；By the accurate control to N/Ti ratio can be improved surface layer high tenacity gradient-structure (including
Thickness and chemical component) accurate control.
3, the ratio of the C atom that Binder Phase is dissolved in carbide chip surface structure of the invention and W atom between
0.85-0.95, and in the core tissue far from surface layer gradient-structure the ratio of the C atom that is dissolved of Binder Phase and W atom between
0.80-0.85, high Co content cubic phase compound missing surface structure Binder Phase in higher C and W atomic ratio make table
Layer structure has than general gradient-structure with better toughness, while lower C and W atomic ratio to close in core Binder Phase
Golden whole wearability with higher.
4, carbide blade base WC of the invention has two peak structure, and two kinds of crystal grain of thickness are uniformly distributed in the base
Can be regarded as having high rigidity and high intensity sub-micron or superfine alloy and the coarse-grain alloy of toughness it is compound, it is in phase
There is better toughness and intensity under same hardness.
5, the mean grain size of titaniferous cubic phase compound is flat between the fine-grained wc in carbide chip of the invention
Between equal grain size and the half of the crude crystal WC mean grain size, it is good that such institutional framework can both guarantee that alloy had
Wearability, while again will not intensity to alloy and toughness adversely affect, to improving alloy high-temp hardness, modeling resistant to high temperatures
Property deformability, anti-diffusive wear ability, anti-oxidant wear resistance etc. all play an important role.
6, carbide chip of the invention is coated with fine grain laminated coating on matrix, there is superior abrasion resistance, modeling resistant to high temperatures
Property deformability and excellent impact resistance can hard alloy substrate combination TiN/TiCN/Al2O3 multilayer CVD coating, through surveying
Examination experiments have shown that, carbide chip of the invention have outstanding plasticity_resistant deformation ability and anti-crescent hollow abrasion ability, also
Have excellent fracture toughness and heat resistanceheat resistant crackle extended capability, is very suitable to the semifinishing and finishing of ordinary steel, stainless steel.
Detailed description of the invention
Fig. 1 is the section of carbide blade base and core structure figure in the embodiment of the present invention 1.
Fig. 2 is the section of carbide blade base and core structure figure in the embodiment of the present invention 2.
Fig. 3 is the section of carbide blade base and core structure figure in the embodiment of the present invention 3.
Fig. 4 is section and the core structure figure of 1 carbide blade base of comparative example.
Wherein, left side figure is section SEM photograph, and the right figure is core SEM photograph, and atrament is Binder Phase, white object
Matter is WC, and grey matter is titaniferous cubic phase compound.
Specific embodiment
Below in conjunction with Figure of description and specific preferred embodiment, the invention will be further described, but not therefore and
It limits the scope of the invention.
Embodiment 1:
A kind of carbide chip of the invention, blade model WNMG080408.The present embodiment carbide cutter tool chip base
Body ingredient is shown in Table 1.Using the Co metal of 5.6wt.% as Binder Phase, using WC and titaniferous cubic phase compound as hard phase.Firmly
There is matter alloy blade matrix the titaniferous cubic phase compound that average bond phase content is nominal 1.5 times of Co Binder Phase content to lack
Surface structure, surface structure with a thickness of 15 μm.The average grain diameter of titaniferous cubic phase compound is 2.0 μm in alloy, Ti/
(Ti+Ta+Nb) it is 0.17 that atomic ratio, which is 0.6, N/Ti atomic ratio,.Titaniferous cubic phase mean grain size is 0.90 μm.Tungsten carbide
(WC) crystal grain distribution has two peak structure, and one of peak is 0.5 μm, another peak is 2.0 μm.It is bonded in the gradient-structure of surface layer
Phase C/W atomic ratio is 0.92, and core Binder Phase C/W atomic ratio is 0.83.The carbide blade base of the present embodiment
Section and core structure figure are as shown in Figure 1, performance parameter is shown in Table 2.
There is fine grain laminated coating (CVD coating) on the hard alloy substrate, successively include from inside to outside:
The TiN layer of innermost layer, with a thickness of 0.5 μm, the layer crystal grain be equi-axed crystal, 0.2 μm of mean grain size；
- one layer of TiCN layer, with a thickness of 7 μm, which is column crystal, and mean grain size is 0.8 μm, columnar grain major diameter
Than being 9；
Outermost α-Al2O3Layer, with a thickness of 6 μm, mean grain size is 1.6 μm.
A kind of preparation method of the carbide chip of above-mentioned the present embodiment, comprising the following steps:
(1) ingredient: preparing mixed raw material powder in proportion, the Co powder of 8wt.% in the present embodiment, 2.0wt.% (Ti,
W) the TiC of C, 0.4wt.%0.5N0.5, 1.0wt.% (Ta, Nb) C, surplus WC powder, WC powder includes thick, thin two kinds of different grain sizes
WC powder, the average particle size of thick WC powder is 10.0 μm, and the average particle size of thin WC powder is 0.5 μm；The quality of thin WC powder and thick WC powder
Than being 0.3: 1；
(2) it mixes powder processed: with the pre- ball milling 12h of ball mill after first mixing thin WC powder and Co powder, being then incorporated ready
Thick WC powder, (Ti, W) C, TiC0.5N0.5, (Ta, Nb) C powder, in addition (conventional forming agent can be used, it is total that forming agent accounts for raw material in forming agent
The mass fraction of amount be 2wt.%~3wt.%) and ingredient stirred evenly with alcohol carry out ball milling (Ball-milling Time 20h~
30h), mixture powder is made in drying after ball milling；
(3) it suppresses: by above-mentioned mixture powder pressing forming, obtaining green compact；
(4) it is sintered: obtaining the carbide chip in the present embodiment 1, specific mistake after above-mentioned green compact is carried out high temperature sintering
Journey is as follows:
(4.1) it takes off forming agent: first above-mentioned green compact being placed in sintering furnace, forming agent removing is warming up under the conditions of nitrogen atmosphere
Temperature, to remove forming agent；
(4.2) first sintered heat insulating stages: continue heating from forming agent removal temperature and carry out heating sintering, be warming up to 1320
DEG C, 0.5 hour (preferred steps) are kept the temperature, 1350 DEG C is continuously heating to, is passed through 60mbar argon gas, is sintered 1h under protection of argon gas；
(4.3) second sintered heat insulating stages: after the first sintered heat insulating stage, continue heating under vacuum conditions and burn
Knot, in-furnace temperature to be sintered rises to 1430 DEG C, into holding stage, starts to be passed through 80mbar argon gas, keeps the temperature 1 hour；
(4.4) after the second sintered heat insulating stage, the CO of 10mbar the third sintered heat insulating stage: is passed through into sintering furnace
Gas, and continue heat preservation sintering 10min；
(4.5) the 4th sintered heat insulating stages: after the third sintered heat insulating stage, the Ar of 30bar is passed through into sintering furnace
Gas, and continue heat preservation sintering 10min；
(4.6) cooling stage: keep furnace atmosphere be cooled to room temperature, finally obtain surface layer gradient-structure with a thickness of 15 μm
Carbide chip, displaing micro tissue topography sees Fig. 1, and performance parameter is shown in Table 2.
(5) prepares coating: routine CVD coating technology is used.
Embodiment 2:
A kind of carbide chip of the invention, blade model WNMG080408.The present embodiment carbide cutter tool chip base
Body ingredient is shown in Table 1, using 6.8wt.%Co metal as Binder Phase, is made with the substance including WC and titaniferous cubic phase compound
For hard phase.It is nominal 1.7 times of Co Binder Phase content of titaniferous cube that carbide blade base, which has average bond phase content,
Phase compound missing surface structure, surface structure with a thickness of 20 μm.Binder Phase C/W atomic ratio is in the gradient-structure of surface layer
0.95, core Binder Phase C/W atomic ratio is 0.83.The average grain diameter of titaniferous cubic phase compound is 2.2 μm in alloy, Ti/
(Ti+Ta+Nb) it is 0.18 that atomic ratio, which is 0.58, N/Ti atomic ratio,.Titaniferous cubic phase mean grain size is 1.1 μm.Tungsten carbide
(WC) crystal grain distribution has two peak structure, and one of peak is 0.7 μm, another peak is 3.0 μm.The hard alloy of the present embodiment
The section of blade base and core structure figure are as shown in Fig. 2, performance parameter is shown in Table 2.
There is fine grain laminated coating on the hard alloy substrate, successively include from inside to outside:
The TiN layer of innermost layer, with a thickness of 0.4 μm, the layer crystal grain be equi-axed crystal, 0.2 μm of mean grain size；
- one layer of TiCN layer, with a thickness of 8 μm, which is column crystal, and mean grain size is 0.8 μm, columnar grain major diameter
Than being 10；
Outermost α-Al2O3Layer, with a thickness of 5 μm, mean grain size is 1.5 μm.
A kind of preparation method of the carbide chip of above-mentioned the present embodiment, preparation step is substantially the same manner as Example 1, area
It is not only that: the TiC of the Co powder of 6.8wt.%, (Ti, W) C, 0.9wt.% of 2.5wt.%0.5N0.5, 2.2wt.% (Ta,
Nb) C, 0.38% Cr3C2, surplus WC powder, WC powder include thick, thin two kinds varigrained WC powder, the average particle size of thick WC powder
It is 8.0 μm, the average particle size of thin WC powder is 0.8 μm；The mass ratio of thin WC powder and thick WC powder is 0.25: 1；
Embodiment 3:
A kind of carbide chip of the invention, blade model WNMG080408.The present embodiment carbide cutter tool chip base
Body ingredient is shown in Table 1, using 8.4wt.%Co metal as Binder Phase, is made with the substance including WC and titaniferous cubic phase compound
For hard phase.It is nominal 1.8 times of Co Binder Phase content of titaniferous cube that carbide blade base, which has average bond phase content,
The surface structure of phase compound missing, with a thickness of 20 μm.Binder Phase C/W atomic ratio is 0.94 in the gradient-structure of surface layer, core
Binder Phase C/W atomic ratio is 0.81.The average grain diameter of titaniferous cubic phase compound is 1.5 μm in alloy, Ti/ (Ti+Ta+Nb)
Atomic ratio is that 0.65, N/Ti atomic ratio is 0.17.Titaniferous cubic phase mean grain size is 1.2 μm.Tungsten carbide (WC) crystal grain distribution
With two peak structure, one of peak is 0.9 μm, another peak is 3.2 μm.The carbide blade base of the present embodiment is cut
Face and core structure figure are as shown in figure 3, performance parameter is shown in Table 2.
There is fine grain laminated coating on the hard alloy substrate, successively include from inside to outside:
The TiN layer of innermost layer, with a thickness of 0.6 μm, the layer crystal grain be equi-axed crystal, 0.22 μm of mean grain size；
- one layer of TiCN layer, with a thickness of 7.5 μm, which is column crystal, and mean grain size is 0.9 μm, column crystal grain length
Diameter ratio is 8；
Outermost α-Al2O3Layer, with a thickness of 6.4 μm, mean grain size is 1.8 μm.
A kind of preparation method of the carbide chip of above-mentioned the present embodiment, preparation step is substantially the same manner as Example 1, area
It is not only that: the TiC of the Co powder of 8.4wt.%, (Ti, W) C, 1.0wt.% of 4.0wt.%0.5N0.5, 6.0wt.% (Ta,
Nb) C, 0.60% Cr3C2, surplus WC powder, WC powder include thick, thin two kinds varigrained WC powder, the average particle size of thick WC powder
It is 10.0 μm, the average particle size of thin WC powder is 1.0 μm；The mass ratio of thin WC powder and thick WC powder is 0.4: 1；
Comparative example 1:
A kind of hard alloy coated blade of the model WNMG080408 of the prior art, carbide blade base
(table 2 shows the performance parameter of this comparative example carbide blade base) ingredient includes: Co, 1.5wt.% of 5.5wt.%
The N of Nb, 0.10wt.% of Ta, 2.0wt.% of Ti, 2.5wt.%, remaining is WC, and WC mean grain size is 2.5 μm, gradient layer
With a thickness of 5 μm.Coating is fine grain laminated coating, successively includes from inside to outside: the TiN layer of innermost layer, with a thickness of 0.5 μm, is put down
Equal 0.2 μm of grain size；Intermediate TiCN layer, with a thickness of 5 μm, mean grain size is 1.3 μm；Outermost α-Al2O3Layer, with a thickness of 4
μm, mean grain size is 2.4 μm.The section of the carbide blade base of the comparative example and core structure figure such as Fig. 4 institute
Show.
Comparative example 2:
A kind of hard alloy coated blade of the model WNMG080408 of the prior art, carbide blade base
(table 2 shows the performance parameter of this comparative example carbide blade base) ingredient includes: Co, 2.0wt.% of 6.5wt.%
The N of Nb, 0.08wt.% of Ta, 1.5wt.% of Ti, 2.5wt.%, remaining is WC, and WC mean grain size is 2.1 μm, gradient layer
With a thickness of 10 μm.Coating is fine grain laminated coating, successively includes from inside to outside: the TiN layer of innermost layer, with a thickness of 0.5 μm, is put down
Equal 0.2 μm of grain size；Intermediate TiCN layer, with a thickness of 5 μm, mean grain size is 1.3 μm；Outermost α-Al2O3Layer, with a thickness of 5
μm, mean grain size is 2.4 μm.
Comparative example 3:
A kind of hard alloy coated blade of the model WNMG080408 of the prior art, carbide blade base
(table 2 shows the performance parameter of this comparative example carbide blade base) ingredient includes: Co, 2.8wt.% of 8.0wt.%
The N of Nb, 0.08wt.% of Ta, 1.5wt.% of Ti, 2.0wt.%, remaining is WC, and WC mean grain size is 2.6 μm, gradient layer
With a thickness of 15 μm.Coating is fine grain laminated coating, successively includes from inside to outside: the TiN layer of innermost layer, with a thickness of 0.5 μm, is put down
Equal 0.2 μm of grain size；Intermediate TiCN layer, with a thickness of 5.5 μm, mean grain size is 1.5 μm；Outermost α-Al2O3Layer, thickness
It is 4 μm, mean grain size is 2.2 μm.
The structure in carbide blade base section and core in Fig. 1-3, wherein atrament is Binder Phase, white
Substance is WC, and grey matter is titaniferous cubic phase compound, and the figure on the left side is the structure in section, it can be seen that the top of figure
The Binder Phase of part black is more than the Binder Phase of the black of lower portion, and the grey titaniferous cubic phase compound of upper rim portion is less than
Lower portion grey titaniferous cubic phase compound, to show that the carbide blade base of embodiment 1-3 has gradient knot
Structure；The figure on the right is the structure of core, it can be seen that white WC has different grain sizes, and the WC of little crystal grain degree
Particle is evenly distributed on around the WC particle of big crystal grain degree, hole around the WC particle to fill big crystal grain degree, reduces accumulation hole
Gap rate drops low-alloyed WC grain degree, adjacent degree, improves the toughness of alloy simultaneously to reduce the difficulty of alloy sintering densification
Grey cubic phase compound particle average particle size is more tiny.The carbide blade base section of comparative example shown in Fig. 4 and core
In the stereoscan photograph in portion, left side figure is the structure in section, it can be seen that the Binder Phase of the upper rim portion black of figure with
As many, the grey cubic phase compound of upper rim portion is in lower portion grey cubic phase for the Binder Phase of the black of lower portion
Close object as many, for the hard alloy without gradient-structure, the figure on the right is the structure of core, it can be seen that though white WC has
There is different grain sizes, but the WC particle of little crystal grain degree flocks together, the WC particle of big crystal grain degree flocks together, not
It is to be uniformly distributed, grey cubic phase compound particle average particle size is thicker, the gold with carbide blade base core of the present invention
Phase structure is different.
There is superior performance than conventional cutting blade base in order to illustrate cutting tip matrix of the invention, will implement
The physical and mechanical properties of cutting tip matrix prepared by example 1-3 and comparative example 1-3 are compared after being tested, such as following table
Shown in 2, as can be seen from the table: the surface structure that the surface of carbide blade base of the invention has cubic phase to lack,
And the surface structure that common carbide blade base is lacked without cubic phase；Carbide blade base of the invention it is close
Degree, room temperature hardness, fracture toughness and bending strength are superior to common carbide blade base, and hardness and fracture toughness are same
Shi Tigao, bending strength are also considerably higher.
The chemical component of table 1 embodiment 1-3 and comparative example 1-3 carbide blade base
The physical and mechanical properties of table 2, embodiment 1-3 and comparative example 1-3 carbide blade base
Have the characteristics that versatile and superior performance is stable in order to illustrate carbide chip after coating of the invention, does
It tests below:
Comparative test 1:
The carbide chip of the above various embodiments and comparative example carries out following cutting test to compare the wearability of blade
And the service life.Machining condition is as shown in table 2 below.
Table 2: the machining condition parameter of comparative test 1
Blade tool flank wear Vb is measured, blades fail is then thought when Vb meets or exceeds 0.3mm.
By experimental test, the cutting time of the carbide chip of each embodiment and comparative example and abrasion loss comparison are as follows
Shown in table 3.
3 comparative test of table, 1 result
From the point of view of upper 3 test result of table, the carbide chip of embodiment is compared to comparative example, under different machining conditions
Cutting time improve 10%~25%, the service life of cutting tip is obviously prolonged, and blade occur burn knife a possibility that reduce,
Stability when cutting significantly improves.
Comparative test 2:
The carbide chip of the above various embodiments and comparative example carries out following cutting test to compare the wearability of blade
And the service life.Machining condition is as shown in table 4 below.
Table 4: the machining condition parameter of comparative test 2
Blade tool flank wear Vb is measured, blades fail is then thought when Vb meets or exceeds 0.3mm.
By experimental test, the cutting time of the carbide chip of each embodiment and comparative example and abrasion loss comparison are as follows
Shown in table 5.
5 comparative test of table, 2 result
From the point of view of upper 5 test result of table, the carbide chip of embodiment is compared to comparative example, in different machining conditions
Under cutting time improve 10%~30%, the service life of cutting tip is obviously prolonged, and blade occur burn knife a possibility that drop
Low, stability when cutting significantly improves.
Comparative test 3:
The carbide chip of the above various embodiments and comparative example carries out following cutting test to compare the wearability of blade
And the service life.Machining condition is as shown in table 6 below.
Table 6: the machining condition parameter of comparative test 3
Blade tool flank wear Vb is measured, blades fail is then thought when Vb meets or exceeds 0.2mm.
By experimental test, the cutting time of the carbide chip of each embodiment and comparative example and abrasion loss comparison are as follows
Shown in table 7.
7 comparative test of table, 3 result
From the point of view of upper 7 test result of table, the carbide chip of embodiment is compared to comparative example, under different machining conditions
Cutting time improve 10%~20%, the service life of cutting tip is obviously prolonged, and blade occur burn knife a possibility that reduce,
Stability when cutting significantly improves.
The above described is only a preferred embodiment of the present invention, being not intended to limit the present invention in any form.Though
So the present invention is disclosed as above with preferred embodiment, and however, it is not intended to limit the invention.It is any to be familiar with those skilled in the art
Member, in the case where not departing from Spirit Essence of the invention and technical solution, all using in the methods and techniques of the disclosure above
Appearance makes many possible changes and modifications or equivalent example modified to equivalent change to technical solution of the present invention.Therefore,
Anything that does not depart from the technical scheme of the invention are made to the above embodiment any simple according to the technical essence of the invention
Modification, equivalent replacement, equivalence changes and modification, all of which are still within the scope of protection of the technical scheme of the invention.
Claims (10)
1. a kind of carbide chip, the painting including carbide blade base and on the carbide blade base
Layer, the carbide blade base be using Co as Binder Phase, using tungsten carbide and titaniferous cubic phase compound as hard phase,
It is characterized in that, the mass fraction of the Binder Phase is 4wt.%~10wt.%, described in the carbide blade base
The mass fraction of titaniferous cubic phase compound is 2wt.%~8wt.%, remaining is tungsten carbide；The titaniferous cubic phase compound
For the carboritride for including one or both of Ta element and Nb element and Ti element；The crystal grain of the tungsten carbide point
Cloth has two peak structure, and a peak is between 0.3 μm~1.0 μm, another peak is between 1.5 μm~3.0 μm；It is described to contain
The mean grain size of titanium cubic phase compound between the fine-grained wc mean grain size and the crude crystal WC mean grain size one
Between half；The non-homogeneous gradient hard alloy has the titaniferous that average bond phase content is 1~2 times of nominal binder phase content vertical
The surface structure of square phase compound missing, the surface structure with a thickness of 5 μm~50 μm, Binder Phase institute in the surface structure
The C atom of dissolution and the ratio of W atom are between 0.85-0.95；Far from surface layer gradient knot in the non-homogeneous gradient hard alloy
The ratio of Binder Phase is dissolved in the core tissue of structure C atom and W atom is between 0.80-0.85.
The coating is fine grain laminated coating, successively includes from inside to outside:
The TiN layer of innermost layer, with a thickness of 0.1 μm~1 μm；
One layer of TiCN layer, with a thickness of 3 μm~12 μm；
Outermost α-Al2O3 layers, with a thickness of 2 μm~10 μm.
2. a kind of carbide chip according to claim 1, which is characterized in that pair of the crystal grain distribution of the tungsten carbide
In peak structure, a peak is between 0.4 μm~1.0 μm, another peak is between 1.5 μm~3.0 μm.
3. a kind of carbide chip according to claim 1, which is characterized in that the thin tungsten carbide powder and thick tungsten carbide
The mass ratio of powder is 0.3~1.0: 1.
4. a kind of carbide chip according to claim 1, which is characterized in that the non-homogeneous gradient hard alloy tool
The surface structure for thering is the titaniferous cubic phase compound that average bond phase content is 1~2 times of nominal binder phase content to lack, the table
Layer structure with a thickness of 5 μm~50 μm, the ratio of Binder Phase is dissolved in the surface structure C atom and W atom between
0.85-0.95, the C that Binder Phase is dissolved in the core tissue in the non-homogeneous gradient hard alloy far from surface layer gradient-structure
The ratio of atom and W atom is between 0.80-0.85.
5. a kind of carbide chip according to any one of claims 1 to 4, which is characterized in that the titaniferous cube
Phase compound include cubic carbide one or more in titanium elements and other transition metal elements, cube nitride and/or
Cubic carbonitride.
6. a kind of carbide chip according to claim 1, which is characterized in that the titaniferous cubic phase compound is put down
Equal grain size is between the fine-grained wc mean grain size and the half of the crude crystal WC mean grain size.
7. a kind of carbide chip according to claim 1, which is characterized in that the crystal grain of the TiN layer is equiax crystal
Grain, mean grain size≤0.5 μm；The crystal grain of the TiCN layer is column crystal, and mean grain size is 0.2 μm~1.0 μm, column crystal
The draw ratio of crystal grain is greater than 5；Described α-Al2O3 layers, mean grain size is 0.2 μm~2.0 μm.
8. a kind of such as a kind of preparation method of carbide chip according to any one of claims 1 to 7, including following step
It is rapid:
(1) ingredient: select Binder Phase metal powder, titaniferous cubic phase compound and tungsten carbide powder as raw material, the quality of each raw material
Percentage are as follows:
Binder Phase metal powder 4.5wt.%~9.5wt.%,
Titaniferous cubic phase compound 2wt.%~8wt.%, and
Tungsten carbide powder surplus,
Each material quality percentage summation is 100%,
Wherein, Binder Phase metal powder is Co metal powder；Tungsten carbide powder includes thick tungsten carbide powder and thin tungsten carbide powder, thick tungsten carbide powder
Average particle size be 3 μm~10 μm, the average particle size of thin tungsten carbide powder is 0.5 μm~2.0 μm, thin tungsten carbide powder and thick tungsten carbide
The mass ratio of powder is 0.1~1.0: 1；
(2) it mixes powder processed: thin tungsten carbide powder, Binder Phase metal powder and titaniferous cubic phase compound being first subjected to mixing and pre- ball
Mill, is then added thick tungsten carbide powder and forming agent carries out ball milling, and drying after ball milling obtains mixture powder；
(3) compression moulding: by the mixture powder pressing forming, green compact is obtained；
(4) it is sintered:
(4.1) it takes off forming agent: under the conditions of green compact obtained by step (3) is placed in nitrogen atmosphere, being warming up to forming agent removal temperature, with de-
Except forming agent；
(4.2) first sintered heat insulating stages: after de- forming agent, continue heating sintering, temperature to be sintered rises to 1320 DEG C~1370
DEG C when, be passed through the Ar protective gas of 20mbar~60mbar, under an ar atmosphere heat preservation sintering 0.5h~1h；
(4.3) second sintered heat insulating stages: after the first sintered heat insulating stage, continuing heating sintering under vacuum conditions, to
When sintering temperature rises to 1400 DEG C~1450 DEG C, it is passed through the Ar protective gas of 30mbar~120mbar, is kept the temperature under an ar atmosphere
0.5h~1.5h；
(4.4) the third sintered heat insulating stage: after the second sintered heat insulating stage, the CO for being passed through 5-100mbar continues to original
Sintering temperature keeps the temperature 5-20min；
(4.5) the 4th sintered heat insulating stages: after the third sintered heat insulating stage, the Ar gas for being passed through 5-100bar continues to original
Sintering temperature keeps the temperature 5-20min；
(4.6) it cooling stage: after the 4th sintered heat insulating stage, keeps being cooled to room temperature under Ar and CO atmosphere, finally obtain
Non-homogeneous gradient hard alloy.
(5) prepared by coating: prepares coating on the hard alloy cutter matrix obtained by step (4.6).
9. a kind of preparation method of carbide chip according to claim 8, which is characterized in that in the step (1),
The average particle size of the thick tungsten carbide powder is 5 μm~10 μm, and the average particle size of the thin tungsten carbide powder is 0.8 μm~1.2 μm, institute
The mass ratio for stating thin tungsten carbide powder and thick tungsten carbide powder is 0.2~0.4: 1.
10. a kind of preparation method of carbide chip according to claim 8 or claim 9, which is characterized in that the step
(5) in, the coating is prepared using conventional CVD process.
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| CN111809073A (en) * | 2020-07-21 | 2020-10-23 | 河源正信硬质合金有限公司 | Gradient hard alloy square block and preparation method thereof |
| CN112846259A (en) * | 2021-01-05 | 2021-05-28 | 崇义章源钨业股份有限公司 | Cutter for steel turning and preparation method thereof |
| CN113649575A (en) * | 2021-07-02 | 2021-11-16 | 湖北刃锋精工有限公司 | Hard alloy blade and preparation method thereof |
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Application publication date: 20190906 |