CN110202880B - Flexible microwave device and preparation method thereof - Google Patents

Flexible microwave device and preparation method thereof Download PDF

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CN110202880B
CN110202880B CN201910477178.8A CN201910477178A CN110202880B CN 110202880 B CN110202880 B CN 110202880B CN 201910477178 A CN201910477178 A CN 201910477178A CN 110202880 B CN110202880 B CN 110202880B
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flexible
waveguide
substrate
microwave
film
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CN110202880A (en
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刘明
周子尧
胡忠强
王志广
朱淑凯
赵亚楠
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Xian Jiaotong University
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Xian Jiaotong University
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    • B32B2307/558—Impact strength, toughness

Abstract

A flexible microwave device and its preparation method, including flexible waveguide and flexible ferrite film; the flexible ferrite film is arranged on the upper surface of the flexible waveguide; the surface of the flexible waveguide is provided with two parallel S-shaped channels, and the flexible ferrite film is positioned in the middle of the S-shaped channels; one end of the S-shaped channel is externally connected with an electromagnetic wave generating device. The flexible microwave device related by the invention has the advantages of simple structure, small volume, low manufacturing cost and good performance. The method can be used for preparing flexible microwave signal processing devices such as isolators, circulators, phase shifters, duplexers, filters, microwave dielectric antennas, ferrite switches and the like, and has important application prospects in the fields of microwave communication, Internet of things, intelligent household appliances and the like.

Description

Flexible microwave device and preparation method thereof
Technical Field
The invention belongs to the technical field of microwave device preparation, and particularly relates to a flexible microwave device and a preparation method thereof.
Background
Modern microwave communication equipment is developing towards miniaturization and portability. The microwave device is made of ferrite material with gyromagnetic property as key material, and mainly comprises: isolator, circulator, phase shifter, duplexer, filter, microwave medium antenna and ferrite switch. Compared with other materials, the ferrite material has the advantages of greatly adjustable working frequency, high dielectric constant, low insertion loss, near-zero temperature coefficient of resonant frequency and other excellent microwave properties, good mechanical properties and chemical stability, and capability of ensuring that high-power microwaves and millimeter wave loads can normally work in severe environments. The garnet ferrite which is most widely used is a ferrimagnetic material, the molecular formula is R3Fe5O12, R in the general formula represents rare earth ions, Tb, Y, Er, Sm and the like are common, and the garnet ferrite is called as garnet ferrite because the garnet ferrite has a similar crystal structure with natural garnet (FeMn)3Al (SiO4) 3. Of these, yttrium iron garnet Y3Fe5O12(YIG) is most widely used. YIG garnet can be easily prepared into a high-quality single crystal sample, with extremely low loss and excellent high-frequency microwave characteristics. This is probably because all metal ions are +3 valent and the oxygen containing unit cell is fully occupied. Therefore, the garnet structure can effectively inhibit the generation of defects even under the condition of not high enough matching degree with the substrate in the crystal preparation and epitaxial thin film deposition processes, and the defect is a challenging problem for the growth of other ferrite single crystals. For high frequency applications, however, microwave loss is a critical performance parameter, which is determined to a large extent by the crystal quality of the ferrite. Therefore, single crystal or epitaxial YIG materials are the most widely used microwave ferrite materials, and dominate today's commercial and military microwave applications.
The microwave device based on the traditional material can not meet the development requirements of the current information society and the technology of the Internet of things on miniaturization and integration of microwave components due to large volume, high power consumption and slow response. If a high-performance flexible device is prepared, the size of the existing microwave device can be greatly reduced, new functions such as power consumption reduction, intelligent regulation and control and the like can be realized, and the high-performance flexible device also has good wearability, is an important research direction at present, and has wide application prospects in various fields such as medical health, communication, information storage and the like. However, the preparation of microwave devices into flexible microwave devices still faces many challenges, and firstly, the widely used microwave ferrite material belongs to ceramic materials, has very high hardness and brittleness, and generally cannot be bent; the coplanar waveguide (CPW) used by the microwave device is generally etched from a printed circuit board and has no flexibility. Therefore, how to prepare the microwave device into a bendable and wearable flexible microwave device has important civil and defense strategic values.
Disclosure of Invention
The invention aims to provide a flexible microwave device and a preparation method thereof, and aims to solve the problems.
In order to achieve the purpose, the invention adopts the following technical scheme:
a flexible microwave device comprises a flexible waveguide and a flexible ferrite film; the flexible ferrite film is arranged on the upper surface of the flexible waveguide; the surface of the flexible waveguide is provided with two parallel S-shaped channels, and the flexible ferrite film is positioned in the middle of the S-shaped channels; one end of the S-shaped channel is externally connected with an electromagnetic wave generating device.
Furthermore, two ends of the flexible waveguide are respectively provided with a clamping mechanism, and the clamping mechanism at one end is connected with the electromagnetic wave generating device; through holes penetrating through the flexible waveguides are arranged on the surfaces of the flexible waveguides on the side surfaces of the two parallel S-shaped channels at equal intervals along the S-shaped channels.
Further, the flexible waveguide comprises a substrate and a deposited copper film, wherein the deposited copper film is arranged on the upper surface of the substrate; two parallel S-shaped channels are arranged on the deposited copper film, and the bottom of each S-shaped channel is a substrate.
Further, the substrate material is polyethylene terephthalate (PET) or Polydimethylsiloxane (PDMS).
Further, a preparation method of the flexible microwave device is based on the flexible microwave device and comprises the following steps:
step 1, obtaining a flexible asbestos substrate Mica from lamellar asbestos by a mechanical stripping method, wherein the thickness of the flexible asbestos substrate Mica is 10-50 microns, fixing four corners of the cleaned flexible Mica on the surface of a clean heating table, and drying the flexible asbestos substrate Mica;
step 2, placing the heating table with the flexible Mica fixed in the step 1 in a laser pulse deposition chamber, and sequentially carrying out the processes of vacuumizing, heating, laser deposition and annealing to prepare the flexible ferrite film;
step 3, designing an S-shaped channel on the flexible waveguide through a photoetching process to serve as a microwave transmission path to form a three-end structure of grounding-signal-grounding, and arranging through holes penetrating through the flexible waveguide on the surfaces of the flexible waveguides on the two sides of the S-shaped microwave transmission line at equal intervals along the S-shaped channel;
and 4, adhering the flexible ferrite film prepared in the step on the flexible waveguide 2 to form the flexible microwave device.
Further, the step 2 specifically comprises the following steps:
A. the vacuum degree of the chamber with the placed sample is pumped to 5x10-5Pa, raising the temperature of the flexible Mica substrate to 500 to 800 ℃;
B. introducing oxygen into the vacuum chamber, and keeping the oxygen pressure between 1 Pa and 20Pa to ensure that the film is fully oxidized and grown in an oxygen-rich environment; adjusting laser parameters to enable the laser to bombard the target material with energy ranging from 1.4W to 1.8W for 30 minutes to 60 minutes;
C. and after the set time is over, turning off the laser, adjusting the oxygen pressure to be half atmospheric pressure, annealing at the cooling rate of 5 ℃ per minute, and cooling to room temperature to obtain the flexible ferrite film.
Further, step 3 specifically includes the following steps:
1) cleaning the surface of a PET or PDMS flexible material, fixing the PET or PDMS flexible material on a sample rack by using a clamp, placing the sample rack in magnetron sputtering equipment, and growing a copper film with the thickness of 1-3 microns on a flexible substrate;
2) placing the PET or PDMS flexible material deposited with the copper film on a spin coater, spin-coating a positive photoresist with the thickness of 2-4 microns, baking the photoresist, placing the photoresist on a photoetching machine, and adding a mask plate for exposure;
3) placing the exposed PET or PDMS flexible material into positive photoresist developing solution for development treatment, taking out the sample from the developing solution after the pattern is completely displayed, and washing and drying the sample by using deionized water;
4) chemically etching the copper film exposed on the flexible substrate by using a ferric chloride solution, taking out the coplanar waveguide obtained after etching, washing the coplanar waveguide with deionized water and drying the coplanar waveguide;
5) and (3) carrying out photoresist removing treatment on the corroded coplanar waveguide by using acetone, cleaning and removing the positive photoresist, then washing the coplanar waveguide by using deionized water, and drying the coplanar waveguide to obtain the flexible waveguide.
Compared with the prior art, the invention has the following technical effects:
the flexible microwave device and the manufacturing method provided by the invention solve the problems of hardness and brittleness of the microwave ferrite material, so that the microwave ferrite material can bear stress and bending to a certain degree while maintaining excellent microwave characteristics. The adopted flexible Mica substrate and the ferrite thin film material have good lattice matching degree, the epitaxially grown ferrite thin film material has the characteristic of narrow width of a ferromagnetic resonance line, and the prepared device can still have the advantages of high frequency and low loss under the flexible bending condition. In addition, the problem that a common printed circuit board cannot be bent is solved, the technology and the method for preparing the flexible coplanar waveguide by using the flexible copper-plated substrate are provided, and the flexible coplanar waveguide has excellent flexibility. The flexible substrate has the characteristics of stressed deformation and recoverability, and the working frequency of the microwave device can be regulated and controlled by adjusting the magnitude of the bias magnetic field or changing the stressed bending degree of the flexible device under the action of the bias magnetic field.
The flexible microwave device related by the invention has the advantages of simple structure, small volume, low manufacturing cost and good performance. The method can be used for preparing flexible microwave signal processing devices such as isolators, circulators, phase shifters, duplexers, filters, microwave dielectric antennas, ferrite switches and the like, and has important application prospects in the fields of microwave communication, Internet of things, intelligent household appliances and the like.
Drawings
FIG. 1 is a schematic diagram of an unstressed flexible microwave device designed and manufactured according to the present invention;
FIG. 2 is a schematic diagram of a flexible microwave device designed and manufactured according to the present invention under stress bending deformation;
FIG. 3 is a flow chart of the present invention for preparing a flexible coplanar waveguide, wherein (a) is a schematic diagram of depositing a copper film on a PET or PDMS flexible material 1, wherein (b) is a schematic diagram of spin-coating a positive photoresist 3 on the PET or PDMS flexible material 1 on which a copper film 2 is deposited, wherein (c) is a schematic diagram after photolithography development, and wherein (d) is a schematic diagram of a coplanar waveguide after wet etching;
FIG. 4 is a graph of broadband ferromagnetic resonance spectrum test data for an unstressed flexible microwave device constructed in accordance with the teachings of the present invention;
FIG. 5 shows the broadband ferromagnetic resonance spectrum test data of the flexible microwave device designed and manufactured according to the present invention when the device is bent under a force.
Wherein: 1. a flexible ferrite film; 2. a flexible waveguide; 3. a clamping mechanism; 4. a substrate; 5. and depositing a copper film.
Detailed Description
The invention is further described below with reference to the accompanying drawings:
referring to fig. 1 to 5, a flexible microwave device includes a flexible waveguide 2 and a flexible ferrite film 1; the flexible ferrite film 1 is arranged on the upper surface of the flexible waveguide 2; the surface of the flexible waveguide 2 is provided with two parallel S-shaped channels, and the flexible ferrite film 1 is positioned in the middle of the S-shaped channels; one end of the S-shaped channel is externally connected with an electromagnetic wave generating device.
Two ends of the flexible waveguide 2 are respectively provided with a clamping mechanism 3, and the clamping mechanism 3 at one end is connected with an electromagnetic wave generating device; through holes penetrating through the flexible waveguide 2 are arranged on the surfaces of the flexible waveguides 2 on the side surfaces of the two parallel S-shaped channels at equal intervals along the S-shaped channels.
The flexible waveguide 2 comprises a substrate 4 and a deposited copper film 5, wherein the deposited copper film 5 is arranged on the upper surface of the substrate 4; two parallel S-shaped channels are arranged on the deposited copper film 5, and the bottom of each S-shaped channel is a substrate 4.
The material of the substrate 4 is polyethylene terephthalate (PET) or Polydimethylsiloxane (PDMS).
A preparation method of a flexible microwave device comprises the following steps:
step 1, obtaining a flexible asbestos substrate Mica from lamellar asbestos by a mechanical stripping method, wherein the thickness of the flexible asbestos substrate Mica is 10-50 microns, fixing four corners of the cleaned flexible Mica on the surface of a clean heating table, and drying the flexible asbestos substrate Mica;
step 2, placing the heating table with the flexible Mica fixed in the step 1 in a laser pulse deposition chamber, and sequentially carrying out the processes of vacuumizing, heating, laser deposition and annealing to prepare the flexible ferrite film;
step 3, designing an S-shaped channel on the flexible waveguide through a photoetching process to serve as a microwave transmission path to form a three-end structure of grounding-signal-grounding, and arranging through holes penetrating through the flexible waveguide on the surfaces of the flexible waveguides on the two sides of the S-shaped microwave transmission line at equal intervals along the S-shaped channel;
and 4, adhering the flexible ferrite film prepared in the step on the flexible waveguide 2 to form the flexible microwave device.
The step 2 specifically comprises the following steps:
A. the vacuum degree of the chamber with the placed sample is pumped to 5x10-5Pa, raising the temperature of the flexible Mica substrate to 500 to 800 ℃;
B. introducing oxygen into the vacuum chamber, and keeping the oxygen pressure between 1 Pa and 20Pa to ensure that the film is fully oxidized and grown in an oxygen-rich environment; adjusting laser parameters to enable the laser to bombard the target material with energy ranging from 1.4W to 1.8W for 30 minutes to 60 minutes;
C. and after the set time is over, turning off the laser, adjusting the oxygen pressure to be half atmospheric pressure, annealing at the cooling rate of 5 ℃ per minute, and cooling to room temperature to obtain the flexible ferrite film.
The step 3 specifically comprises the following steps:
1) cleaning the surface of a PET or PDMS flexible material, fixing the PET or PDMS flexible material on a sample rack by using a clamp, placing the sample rack in magnetron sputtering equipment, and growing a copper film with the thickness of 1-3 microns on a flexible substrate;
2) placing the PET or PDMS flexible material deposited with the copper film on a spin coater, spin-coating a positive photoresist with the thickness of 2-4 microns, baking the photoresist, placing the photoresist on a photoetching machine, and adding a mask plate for exposure;
3) placing the exposed PET or PDMS flexible material into positive photoresist developing solution for development treatment, taking out the sample from the developing solution after the pattern is completely displayed, and washing and drying the sample by using deionized water;
4) chemically etching the copper film exposed on the flexible substrate by using a ferric chloride solution, taking out the coplanar waveguide obtained after etching, washing the coplanar waveguide with deionized water and drying the coplanar waveguide;
5) and (3) carrying out photoresist removing treatment on the corroded coplanar waveguide by using acetone, cleaning and removing the positive photoresist, then washing the coplanar waveguide by using deionized water, and drying the coplanar waveguide to obtain the flexible waveguide.
Under the action of a slight external force, the flexible deformation is generated, the S11 and S21 wave forms of the flexible deformation are measured through a vector network analyzer VNA under the action of a bias magnetic field, and the transmission bandwidth, the insertion loss and other characteristics of the flexible deformation are analyzed.
The flexible ferrite film 1 needs to use an electron paramagnetic resonance spectrometer to measure a ferromagnetic resonance field and a resonance line width thereof, and selects a film sample meeting requirements, and generally requires that the line width of the film is less than 50Oe, so that good microwave response can be ensured.
The performance of the flexible microwave device is shown in fig. 4 and 5. Fig. 4 shows that the resonant frequency of the microwave device changes significantly when the applied magnetic field is varied in the range of 2150Oe to 3700 Oe. Fig. 5 shows that under the action of 2600Oe applied magnetic field, stress with different curvature radius is applied to the microwave device, and the ferromagnetic resonance frequency of the stress is changed by 196MHz, which proves that the stress can regulate and control the working frequency of the flexible microwave device.
The invention provides a design of a flexible microwave device and a preparation method thereof. The flexible Mica and the ferrite thin film material have good lattice matching degree, the epitaxially grown ferrite thin film material has the characteristic of narrow ferromagnetic resonance line width, and the prepared device can still have the advantages of high frequency and low loss under the flexible bending condition.

Claims (3)

1. A preparation method of a flexible microwave device is characterized by comprising the following steps:
step 1, obtaining a flexible asbestos substrate Mica from lamellar asbestos by a mechanical stripping method, wherein the thickness of the flexible asbestos substrate Mica is 10-50 microns, fixing four corners of the cleaned flexible Mica on the surface of a clean heating table, and drying the flexible asbestos substrate Mica;
step 2, placing the heating table with the flexible Mica fixed in the step 1 in a laser pulse deposition chamber, and sequentially carrying out the processes of vacuumizing, heating, laser deposition and annealing to prepare the flexible ferrite film;
step 3, designing an S-shaped channel on the flexible waveguide through a photoetching process to serve as a microwave transmission path to form a three-end structure of grounding-signal-grounding, and arranging through holes penetrating through the flexible waveguide on the surfaces of the flexible waveguides on the two sides of the S-shaped microwave transmission line at equal intervals along the S-shaped channel;
step 4, adhering the flexible ferrite film prepared in the step on the flexible waveguide 2 to form a flexible microwave device;
the flexible microwave device comprises a flexible waveguide (2) and a flexible ferrite film (1); the flexible ferrite film (1) is arranged on the upper surface of the flexible waveguide (2); the surface of the flexible waveguide (2) is provided with two parallel S-shaped channels, and the flexible ferrite film (1) is positioned in the middle of the S-shaped channels; one end of the S-shaped channel is externally connected with an electromagnetic wave generating device;
two ends of the flexible waveguide (2) are respectively provided with a clamping mechanism (3), and the clamping mechanism (3) at one end is connected with an electromagnetic wave generating device; through holes penetrating through the flexible waveguides (2) are arranged on the surfaces of the flexible waveguides (2) on the side surfaces of the two parallel S-shaped channels at equal intervals along the S-shaped channels;
the flexible waveguide (2) comprises a substrate (4) and a deposited copper film (5), wherein the deposited copper film (5) is arranged on the upper surface of the substrate (4); arranging two parallel S-shaped channels on the deposited copper film (5), wherein the bottom of each S-shaped channel is a substrate (4);
the substrate (4) is made of polyethylene terephthalate (PET) or Polydimethylsiloxane (PDMS).
2. The method for preparing a flexible microwave device according to claim 1, wherein the step 2 specifically comprises the following steps:
A. the vacuum degree of the chamber with the placed sample is pumped to 5x10-5Pa, raising the temperature of the flexible Mica substrate to 500 to 800 ℃;
B. introducing oxygen into the vacuum chamber, and keeping the oxygen pressure between 1 Pa and 20Pa to ensure that the film is fully oxidized and grown in an oxygen-rich environment; adjusting laser parameters to enable the laser to bombard the target material with energy ranging from 1.4W to 1.8W for 30 minutes to 60 minutes;
C. and after the set time is over, turning off the laser, adjusting the oxygen pressure to be half atmospheric pressure, annealing at the cooling rate of 5 ℃ per minute, and cooling to room temperature to obtain the flexible ferrite film.
3. The method for preparing a flexible microwave device according to claim 1, wherein the step 3 specifically comprises the following steps:
1) cleaning the surface of a PET or PDMS flexible material, fixing the PET or PDMS flexible material on a sample rack by using a clamp, placing the sample rack in magnetron sputtering equipment, and growing a copper film with the thickness of 1-3 microns on a flexible substrate;
2) placing the PET or PDMS flexible material deposited with the copper film on a spin coater, spin-coating a positive photoresist with the thickness of 2-4 microns, baking the photoresist, placing the photoresist on a photoetching machine, and adding a mask plate for exposure;
3) placing the exposed PET or PDMS flexible material into positive photoresist developing solution for development treatment, taking out the sample from the developing solution after the pattern is completely displayed, and washing and drying the sample by using deionized water;
4) chemically etching the copper film exposed on the flexible substrate by using a ferric chloride solution, taking out the coplanar waveguide obtained after etching, washing the coplanar waveguide with deionized water and drying the coplanar waveguide;
5) and (3) carrying out photoresist removing treatment on the corroded coplanar waveguide by using acetone, cleaning and removing the positive photoresist, then washing the coplanar waveguide by using deionized water, and drying the coplanar waveguide to obtain the flexible waveguide.
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