CN110197857A - Fluting cell piece and cell piece component - Google Patents
Fluting cell piece and cell piece component Download PDFInfo
- Publication number
- CN110197857A CN110197857A CN201910572378.1A CN201910572378A CN110197857A CN 110197857 A CN110197857 A CN 110197857A CN 201910572378 A CN201910572378 A CN 201910572378A CN 110197857 A CN110197857 A CN 110197857A
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- China
- Prior art keywords
- cell piece
- welding
- fluting
- welding layer
- gate line
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- 238000003466 welding Methods 0.000 claims abstract description 106
- 238000005452 bending Methods 0.000 claims abstract description 29
- 230000005611 electricity Effects 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to photovoltaic arts, and in particular to a kind of fluting cell piece and cell piece component.The fluting cell piece includes cell piece ontology, and the front of the cell piece ontology is equipped with main gate line, is opened up on the cell piece ontology at the main gate line tip position fluted；The first welding layer is equipped in the main gate line, the cell piece ontology back side is equipped with the second welding layer corresponding with first welding layer position, welding end and rear welding end before the front and rear ends of first welding layer and the front and rear ends of the second welding layer are respectively formed.The cell piece component includes multiple fluting cell pieces, and is connected between the second welding layer on previous fluting cell piece and the first welding layer on current fluting cell piece by bending welding；The bending welding passes through the groove.The fluting cell piece and cell piece component can the technology be able to ascend component efficiency, reduce cell piece sliver risk, while can reduce monolithic cost.
Description
Technical field
The present invention relates to photovoltaic arts, and in particular to a kind of fluting cell piece and cell piece component.
Background technique
Photovoltaic module needs to design larger due to being limited to will appear more sliver in module production process at present
Cell piece between spacing, the distance between traditional cell piece mostly be 2.0 to 3.0 mm.Such structure reduces component effect
Rate, so that unit area component power declines, single watt of cost increase.
The present invention devises a kind of grid line fluting battery technology.Use the battery of the structure.Battery can be greatly shortened
The distance between piece.It can reduce so that cell piece spacing is most short to 0.1 mm.Shorten decades of times than originally.The technology can mention
Rise component efficiency.Reduce cell piece sliver risk.It can reduce single watt of cost simultaneously.
Summary of the invention
In order to solve the deficiencies in the prior art, the present invention provides a kind of fluting cell piece and cell piece component, institute
State fluting cell piece and cell piece component can the technology be able to ascend component efficiency, reduce cell piece sliver risk, while energy
Enough reduce monolithic cost.
The technical solution provided according to the present invention provides a kind of fluting cell piece as the first aspect of the present invention, described
The silicon wafer slotted on cell piece is formed by the slicing silicon ingots slotted in grid line position；The fluting cell piece includes cell piece
The front of ontology, the cell piece ontology is equipped with main gate line, opens on the cell piece ontology at the main gate line tip position
Equipped with groove；
The first welding layer is equipped in the main gate line, the cell piece ontology back side is equipped with opposite with first welding layer position
The second welding layer answered, the front and rear ends of first welding layer and the front and rear ends of the second welding layer are respectively formed preceding welding
End and rear welding end.
As a second aspect of the invention, a kind of cell piece component is provided, the cell piece component includes multiple such as this hair
Fluting cell piece described in bright first aspect, and on the second welding layer and current fluting cell piece on previous fluting cell piece
The first welding layer between by bending welding be connected；The bending welding passes through the groove.
Further, one end of the bending welding connects the rear welding of the second welding layer on the previous fluting cell piece
End, the other end of bending welding connect the welding front connector of the first welding layer on the current fluting cell piece.
It can be seen that fluting cell piece and cell piece component provided by the invention compared with prior art from the above,
Have following advantages: the present invention opened up on cell piece ontology it is fluted enable to the bending welding pass through the groove,
To on the one hand make the bending welding that there is exclusive accommodating space, prevent bending welding dislocation movement from leading to not prison welding
Problem occurs；On the other hand, in the prior art in cell piece component between cell piece usually require there are enough spaces to make
The bending welding passes through, once the too small meeting of the distance between cell piece so that bending welding squeeze crack cell piece, and in the present invention
Groove can be carried out shorten cell piece ontology between spacing while based on bending the enough spaces of welding, can effectively evade
Sliver risk caused by cell piece spacing is shorter.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of first aspect present invention.
Fig. 2 is the enlarged structure schematic diagram of part A in Fig. 1.
Fig. 3 is the enlarged structure schematic diagram of part B in Fig. 1.
Fig. 4 is the structural schematic diagram of second aspect of the present invention.
100. cell piece ontology, 200. main gate lines, 310. first welding layers, 320. second welding layers, 330. bending weldings,
410. forward recess, 420. rearward recess.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, the present invention is described in more detail.Wherein identical components are presented with like reference characters.It needs to illustrate
It is that word "front", "rear" used in the following description, "left", "right", "up" and "down" refer to the direction in attached drawing.It uses
Word "inner" and "outside" refer respectively to the direction towards or away from geometric center of specific component.
As the first embodiment of first aspect present invention, as shown in Fig. 1 ~ Fig. 3:
A kind of fluting cell piece is provided, the fluting cell piece includes cell piece ontology 100, and the cell piece ontology 100 is just
Face is equipped with main gate line 200, and the main gate line 200 runs through the positive front-end and back-end of the cell piece ontology 100, the main gate line
200 front end forms the front end of the main gate line 200, and the rear end of main gate line 200 forms the follower head of the main gate line 200；
Forward recess 410 is offered on the cell piece ontology 100 at the 200 front end position of main gate line, close to the main gate line
Rearward recess 420 is offered on cell piece at 200 follower head positions；
The first welding layer 310 is equipped in the main gate line 200, before the front and rear ends of first welding layer 310 are respectively formed
End and rear welding end are welded, is equipped on 100 back side of cell piece ontology opposite with 310 position of the first welding layer
The second welding layer 320 answered, welding end and rear welding end before the rear and front end of second welding layer 320 is respectively formed.
The first embodiment as a second aspect of the invention, as shown in Figure 4:
A kind of cell piece component is provided, the cell piece component includes multiple as described in the first embodiment of first aspect present invention
Fluting cell piece, and the second welding layer 320 on previous fluting cell piece and the first welding on current fluting cell piece
It is connected between layer 310 by bending welding 330, the bending welding 330 passes through the forward recess 410 on current fluting cell piece
And/or after rearward recess 420, one end of bending welding 330 connects the rear weldering of the second welding layer 320 on the previous fluting cell piece
End is connect, the other end of bending welding 330 connects the welding front connector of the first welding layer 310 on the current fluting cell piece.
Second of embodiment as first aspect present invention:
A kind of fluting cell piece is provided, the fluting cell piece includes cell piece ontology 100, and the cell piece ontology 100 is just
Face is equipped with main gate line 200, and the main gate line 200 runs through the positive front-end and back-end of the cell piece ontology 100, the main gate line
200 front end forms the front end of the main gate line 200, and the rear end of main gate line 200 forms the follower head of the main gate line 200；
Forward recess 410 is offered on the cell piece ontology 100 at the 200 front end position of main gate line；
The first welding layer 310 is equipped in the main gate line 200, before the front and rear ends of first welding layer 310 are respectively formed
End and rear welding end are welded, is equipped on 100 back side of cell piece ontology opposite with 310 position of the first welding layer
The second welding layer 320 answered, welding end and rear welding end before the rear and front end of second welding layer 320 is respectively formed.
Second of embodiment as a second aspect of the invention:
A kind of cell piece component is provided, the cell piece component includes multiple as described in second of embodiment of first aspect present invention
Fluting cell piece, and the second welding layer 320 on previous fluting cell piece and the first welding on current fluting cell piece
It is connected between layer 310 by bending welding 330, the bending welding 330 passes through the forward recess 410 on current fluting cell piece
Afterwards, one end of bending welding 330 connects the rear welding end of the second welding layer 320 on the previous fluting cell piece, bending weldering
The other end with 330 connects the welding front connector of the first welding layer 310 on the current fluting cell piece.
The third embodiment as first aspect present invention:
A kind of fluting cell piece is provided, the fluting cell piece includes cell piece ontology 100, and the cell piece ontology 100 is just
Face is equipped with main gate line 200, and the main gate line 200 runs through the positive front-end and back-end of the cell piece ontology 100, the main gate line
200 front end forms the front end of the main gate line 200, and the rear end of main gate line 200 forms the follower head of the main gate line 200；
Rearward recess 420 is offered on the cell piece ontology 100 at the 200 front end position of main gate line；
The first welding layer 310 is equipped in the main gate line 200, before the front and rear ends of first welding layer 310 are respectively formed
End and rear welding end are welded, is equipped on 100 back side of cell piece ontology opposite with 310 position of the first welding layer
The second welding layer 320 answered, welding end and rear welding end before the rear and front end of second welding layer 320 is respectively formed.
The third embodiment as a second aspect of the invention:
A kind of cell piece component is provided, the cell piece component includes multiple as described in the third embodiment of first aspect present invention
Fluting cell piece, and the second welding layer 320 on previous fluting cell piece and the first welding on current fluting cell piece
It is connected between layer 310 by bending welding 330, the bending welding 330 passes through the rearward recess 420 on current fluting cell piece
Afterwards, one end of bending welding 330 connects the rear welding end of the second welding layer 320 on the previous fluting cell piece, bending weldering
The other end with 330 connects the welding front connector of the first welding layer 310 on the current fluting cell piece.
It should be understood by those ordinary skilled in the art that: the above is only a specific embodiment of the present invention, and
It is not used in the limitation present invention, all any modification, equivalent substitution, improvement and etc. within purport of the invention, done should all include
Within protection scope of the present invention.
Claims (3)
1. a kind of fluting cell piece, which is characterized in that the fluting cell piece includes cell piece ontology (100), the cell piece
The front of ontology (100) is equipped with main gate line (200), the cell piece ontology (100) at the main gate line (200) tip position
On open up it is fluted；
It is equipped with the first welding layer (310) on the main gate line (200), cell piece ontology (100) back side is equipped with and described
Corresponding second welding layer (320) in one welding layer (310) position, the front and rear ends and second of first welding layer (310)
Welding end and rear welding end before the front and rear ends of welding layer (320) are respectively formed.
2. a kind of cell piece component, which is characterized in that the cell piece component includes multiple fluting electricity as described in claim 1
Pond piece, and the first welding layer (310) on the second welding layer (320) and current fluting cell piece on previous fluting cell piece
Between by bending welding (330) be connected；The bending welding (330) passes through the groove.
3. cell piece component as claimed in claim 2, which is characterized in that described in one end connection of the bending welding (330)
The other end connection of the rear welding end of second welding layer (320) on previous fluting cell piece, bending welding (330) is described current
The welding front connector of first welding layer (310) on fluting cell piece.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910572378.1A CN110197857A (en) | 2019-06-28 | 2019-06-28 | Fluting cell piece and cell piece component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910572378.1A CN110197857A (en) | 2019-06-28 | 2019-06-28 | Fluting cell piece and cell piece component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110197857A true CN110197857A (en) | 2019-09-03 |
Family
ID=67755400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910572378.1A Pending CN110197857A (en) | 2019-06-28 | 2019-06-28 | Fluting cell piece and cell piece component |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110197857A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112563115A (en) * | 2019-09-10 | 2021-03-26 | 苏州阿特斯阳光电力科技有限公司 | Silicon ingot and preparation method thereof, and silicon wafer and preparation method thereof |
| CN112563368A (en) * | 2019-09-10 | 2021-03-26 | 苏州阿特斯阳光电力科技有限公司 | Silicon ingot and preparation method thereof, and silicon wafer and preparation method thereof |
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| CN103028884A (en) * | 2013-01-07 | 2013-04-10 | 天津必利优科技发展有限公司 | Positioning and guiding device for solar cell solder strip |
| CN208722909U (en) * | 2018-09-28 | 2019-04-09 | 英利能源（中国）有限公司 | The manual weld mold of battery strings |
| CN109768109A (en) * | 2019-01-24 | 2019-05-17 | 东方日升新能源股份有限公司 | Photovoltaic module and its processing method |
| CN209804675U (en) * | 2019-06-28 | 2019-12-17 | 无锡尚德太阳能电力有限公司 | slotted battery piece and battery piece subassembly |
-
2019
- 2019-06-28 CN CN201910572378.1A patent/CN110197857A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569438A (en) * | 2012-01-31 | 2012-07-11 | 乐山职业技术学院 | Solar cell capable of saving silver paste and preparation process thereof |
| CN103028884A (en) * | 2013-01-07 | 2013-04-10 | 天津必利优科技发展有限公司 | Positioning and guiding device for solar cell solder strip |
| CN208722909U (en) * | 2018-09-28 | 2019-04-09 | 英利能源（中国）有限公司 | The manual weld mold of battery strings |
| CN109768109A (en) * | 2019-01-24 | 2019-05-17 | 东方日升新能源股份有限公司 | Photovoltaic module and its processing method |
| CN209804675U (en) * | 2019-06-28 | 2019-12-17 | 无锡尚德太阳能电力有限公司 | slotted battery piece and battery piece subassembly |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112563115A (en) * | 2019-09-10 | 2021-03-26 | 苏州阿特斯阳光电力科技有限公司 | Silicon ingot and preparation method thereof, and silicon wafer and preparation method thereof |
| CN112563368A (en) * | 2019-09-10 | 2021-03-26 | 苏州阿特斯阳光电力科技有限公司 | Silicon ingot and preparation method thereof, and silicon wafer and preparation method thereof |
| CN112563115B (en) * | 2019-09-10 | 2022-07-15 | 苏州阿特斯阳光电力科技有限公司 | Silicon ingot and preparation method thereof, and silicon wafer and preparation method thereof |
| CN112563368B (en) * | 2019-09-10 | 2022-07-15 | 苏州阿特斯阳光电力科技有限公司 | Silicon ingot and preparation method thereof, and silicon wafer and preparation method thereof |
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