CN107895748A - High-efficiency solar is without main grid crystal-silicon battery slice - Google Patents
High-efficiency solar is without main grid crystal-silicon battery slice Download PDFInfo
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- CN107895748A CN107895748A CN201610625471.0A CN201610625471A CN107895748A CN 107895748 A CN107895748 A CN 107895748A CN 201610625471 A CN201610625471 A CN 201610625471A CN 107895748 A CN107895748 A CN 107895748A
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- gate line
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 45
- 239000010703 silicon Substances 0.000 title claims abstract description 45
- 238000003466 welding Methods 0.000 claims abstract description 88
- 230000002708 enhancing effect Effects 0.000 claims abstract description 51
- 230000000694 effects Effects 0.000 claims abstract description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 17
- 229910052709 silver Inorganic materials 0.000 claims description 17
- 239000004332 silver Substances 0.000 claims description 17
- 239000002002 slurry Substances 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 230000001788 irregular Effects 0.000 claims description 4
- 235000013399 edible fruits Nutrition 0.000 claims 2
- 235000003283 Pachira macrocarpa Nutrition 0.000 claims 1
- 241001083492 Trapa Species 0.000 claims 1
- 235000014364 Trapa natans Nutrition 0.000 claims 1
- 235000009165 saligot Nutrition 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 20
- 238000000034 method Methods 0.000 abstract description 10
- 238000012986 modification Methods 0.000 abstract description 2
- 230000004048 modification Effects 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 238000005516 engineering process Methods 0.000 description 16
- 239000000463 material Substances 0.000 description 14
- 239000013078 crystal Substances 0.000 description 8
- 239000002210 silicon-based material Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000005611 electricity Effects 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- -1 silver-aluminum Chemical compound 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention provides one kind and is based on prior art device, on the premise of modification equipment on a small quantity and technique, reduces production cost and improves the high-efficiency solar of generated energy without main gate line crystal-silicon battery slice.A kind of high-efficiency solar is without main gate line crystal-silicon battery slice, including cell piece, thin grid line and backplate, laterally gather thin grid line in the front of cell piece, back side array is provided with backplate, the both ends of the vertical direction of the thin grid line of cell piece are provided with main grid end, without main gate line on thin grid line between main grid end, welding enhancing point and enhancing electrical connection effect portion are interval with the vertical line of the thin grid line between main grid end.The present invention reduces cost, improves generated energy, promoted the progress in China solar panel field significantly, have good market promotion prospect outside the basic function for ensureing solar energy crystal-silicon battery slice.
Description
Technical field
The invention belongs to field of new energy technologies, more particularly to solar energy, specifically a kind of high-efficiency solar dereliction
Grid crystal-silicon battery slice.
Background technology
Global fossil energy crisis has promoted the fast development of photovoltaic industry with environmental pollution.At present, with crystal silicon electricity
Component based on the piece of pond occupies more than the 80% of global photovoltaic module market；Crystal-silicon battery slice is developed so far, its cost of manufacture
And generated energy turns into the main restricting factor of its development.In terms of cost of manufacture, silicon materials in occupation of about 60-70% material into
Originally, material cost of the dosage of silver paste in occupation of about 15-25%；So the cost of high-purity crystal silicon material and its usage amount, with
And the usage amount of silver paste all has significant effect to the cost of cell piece or component.In terms of generated energy, it is mainly by the sun
The influence of the effective illuminating area of energy cell piece and photoelectric transformation efficiency；The photoelectric transformation efficiency heavy dependence crystal silicon material of cell piece
The structure of material itself, effective illuminating area of cell piece is depending on cell piece master, the area coverage of thin grid line.
The generating matrix of crystal-silicon battery slice is silicon chip, conventional cell piece be printed on the thin grid line of many bars to collect silicon chip by
Caused electric current after to illumination, and 2-5 bars main gate line is also printed on to collect the electric current on thin grid line.In low cost, high generating
Under the urgency for measuring this target of cell piece, dereliction grid line cell chip technology arises at the historic moment.Dereliction grid line cell piece, generally referred to as
On the basis of conventional batteries piece, remove main gate line and retain thin grid line；This cell piece, on the one hand can be significantly because without main gate line
The usage amount of silver paste is reduced, can additionally increase effective illuminating area of cell piece.
On dereliction grid line cell chip technology, there are many methods at present and to enumerate part case as follows.
1. the Schmid of Germany removes the main gate line of cell piece without main gate line technology, and width thin grid line and
Away from some adjustment have been done, common welding additionally is replaced come Series connection welding polylith cell piece with 15 copper wires.
2. Canadian Day4Electrode patented technologies remove the main gate line of cell piece and retain thin grid line, afterwards
It is covered on thin grid with the film that low-melting-point metal copper wire is plated embedded with a row, then copper wire and thin grid is welded by laminating technology
Come.
3. Lin Jianwei《Without main grid, high efficiency back contact solar module, component and preparation technology》[the patent No.：CN
104282788 A] in mention, the main gate line of cell piece is removed the series connection point of cell piece is positioned over the cell piece back side simultaneously,
This method will further improve effective illuminating area of cell piece.
4. yellow strong《Photovoltaic battery module and preparation method thereof》[the patent No.：The A of CN 104716213] in mention, electricity
The main gate line of pond piece removes and retains thin grid line, while replaces common welding with conductive tape come Series connection welding cell piece.
5. it is in CN201820762U patents to authorize publication No., it is proposed that it is a kind of completely without the technical scheme of main gate line,
Only retain thin grid line.
6. in CN103618011A patents, there is provided a kind of skill that main gate line is substituted using some weldings and some conductive tapes
Art scheme.
But these prior arts all have ignored an objective fact, that is, existing equipment and known technology, it is right
Above-mentioned technical proposal can not realize volume production, if using above-mentioned technical proposal, need large area to change production equipment, also,
Change or improve crystal silicon battery chip architecture come reduce cell piece cost and improve cell piece generated energy, these methods typically have or
Complex process, cost is high, or technique is not yet ripe, can not obtain for example above-mentioned patent of high volume applications 3..And change photovoltaic module
The material of production, will bring substantial amounts of work adjustment, such as matching problem and equipment between the research and development of material, new material
Update, 2., 4. this undoubtedly adds for example above-mentioned patent of component production cost.For similar to patent 1. without main gate line
Battery chip technology, it is substantial amounts of real by us although not changing battery chip architecture and existing component production technology
Checking, it is found that the adhesive force between copper wire and thin grid is too small, the electricity at its welding of battery film in the test of TC cycle reliabilities
Connection is deteriorated, and rosin joint and disconnected grid phenomenon easily occurs in the welding position at cell piece both ends.Similar to prior art 5. 6., its
The whole production technology of existing solar battery sheet is changed, therefore, does not have the possibility of volume production.
How on the basis of original component production technology is kept, the front electrode of cell piece is changed on a small quantity, significantly
Cell piece and component production cost are reduced, and improves the generated energy of monolithic battery piece.Be current solar battery sheet field urgently
Must solve the problems, such as.
The content of the invention
It is an object of the invention to provide one kind to be based on prior art device, in the premise of modification equipment and technique on a small quantity
Under, reduce production cost and improve the high-efficiency solar of generated energy without main grid crystal-silicon battery slice.
In order to achieve the above object, the technical solution adopted by the present invention is：A kind of high-efficiency solar is without main gate line crystal silicon electricity
Pond piece, including cell piece, thin grid line and backplate, laterally densely covered thin grid line, back side array are provided with the back side in the front of cell piece
Electrode, the both ends of the vertical direction of the thin grid line of cell piece are provided with main grid end, on the thin grid line between main grid end
Without main gate line, welding enhancing point and enhancing electrical connection effect portion are interval with the vertical line of the thin grid line between main grid end.
The welding enhancing point of the present invention solves dereliction grid cell piece and easily rosin joint occurs in middle and both ends welding
Problem, substantially increase the reliability of dereliction grid cell piece.
The enhancing electrical connection effect portion of the present invention is to strengthen the soldering reliability between welding and thin grid line, for remedying welding
Influenceed caused by bad；For example, when rosin joint phenomenon occurs in weld, the other end of thin grid can conduct electric current to be electrically connected in enhancing
Effect portion is met, then thus position is come together in welding, and remedying for rosin joint phenomenon is completed with this.
Also include welding, the connection between cell piece is welding welding, and the covering join domain of welding is a pair of main gate lines
Thin grid line and welding enhancing point between termination, main grid end.
Welding enhancing point electrically connects effect portion point-blank with enhancing or is provided separately.
Welding includes rectangle welding, circular welding and oval welding etc., and welding shape does not do particular determination, is ensureing to weld
Connection function, and on the basis of thin grid line can be connected, cross-sectional area is reduced as far as possible, to increase the illuminating area of cell piece.
Welding and thin grid line, a pair of main grid ends and welding enhancing spot welding.
The quantity of main grid end is 2-6 pairs.Generally, conventional cell piece includes the main gate line of different bar numbers, such as
There are two main grid cell pieces, three main gate line cell pieces, four main gate line cell pieces, five main gate line cell pieces even a plurality of master
Grid line cell piece.Different bar number main gate lines can have an impact to some aspects of cell piece, such as two main gate line cell pieces may
Cell piece cost can be reduced but reduce its electric current collection ability, five main gate lines increase its electric current collection ability but increased
Big silver paste usage amount and reduce effective illuminating area.
Although this invents no main gate line, the cell piece need to coordinate welding to use, the termination number that main gate line retains
It is influenceed still to exist.By experiment, we have verified that the cell piece can coordinate thinner thinner welding to be used, so
Shading-area problem we can be with control in place.For retaining two or three pairs of main grid ends, it can further reduce silver paste
Usage amount, further increase the effective shading-area of silicon chip.For retaining five pairs or six pairs of main grid ends, it can ensure existing
While some generated energy, the ability that welding collects electric current in silicon chip is further lifted.And for the present invention, it is believed that main gate line is protected
Most preferably 4 pairs of the termination number stayed.
Main grid end length is 2-20mm, width 0.2-1.2mm.
Main gate line tip shapes include rectangle, ellipse, triangle, circle, trapezoidal and irregular strip etc..
The shape of main grid end is on the premise of connection effect is ensured, shape is not fully fixed, people in the art
The shape that member is readily conceivable that all should be within the scope of the invention.
Main grid end slurry therewith is high-purity slurry or silver-colored aluminum slurry.
The size of rectangle welding is：Width 0.3-1.5mm, thickness 0.1-0.25mm.
The size of toroidal welding is：Diameter D=0.2-0.5mm.
Ellipticity welding size is：Major axis a=0.15-0.75mm, short axle b=0.05-0.125mm.
Main gate line tip shapes include rectangle, ellipse, triangle, circle, trapezoidal and irregular strip.
Welding enhancing point material therefor is high-purity silver paste or silver-colored aluminum slurry.
The shape of welding enhancing point includes rectangle, circle, ellipse and triangle, the shape bag in enhancing electrical connection effect portion
It is linear to include linear, rhombus, fold-line-shaped or rounding off.
The length of welding enhancing point is 2-10 millimeters, and width is 0.2-1.2 millimeters.
The number of welding enhancing point is unlimited, is preferentially chosen according to being actually needed, and usually 1-5 are advisable.
It is silver paste or electrocondution slurry to strengthen electrical joint material therefor.
The width in enhancing electrical connection effect portion is 60-120 microns, is highly 10-40 microns.
Crystal silicon solar batteries piece mainly by：Light is converted into the conductive material of electric high-purity crystal silicon material, collected current
Including positive main gate line, the silver electrode of thin grid line and the back side, aluminium backboard, the key point of this patent removes the big portion of cell piece
Point main gate line and retain the fraction at its both ends.Being calculated according to current cell piece material cost, silicon materials account for 60-70%,
Silver-colored dosage accounts for 15-25%；And silver usage amount in terms of on, the silver amount of front electrode is relatively good, and backplate quality is not
Such as front, generally positive high-purity silver paste, the silver-aluminum slurry at the back side, our such a design can be reduced
Silver-colored 70-75% used in crystal-silicon battery slice front electrode.
Generated energy is primarily to see cell piece or solar panel i.e. the power output P of the concatermer of polylith cell piece.It is logical
Often, when the material of each structure of cell piece is determined, its generated energy power output P depends primarily on effective light
Show up long-pending S, and the silicon materials in generating state are more, and its generated energy is necessarily bigger；And this patent use is proper without main gate line technology
Reduce it well and cover the area of silicon materials, then coordinate thinner welding, the power output of solar panel can be increased about
Increase 1-2% or so.Illustrated with more intuitive data, calculated by 10 megawatts of photovoltaic plant of generated energy, material can be saved
Nearly 230-380 ten thousand yuans of cost.In addition, in terms of generated energy, the removal of main gate line and the use for coordinating special welding,
It can increase 1%-the 2% of generating efficiency；Illustrated with more intuitive data, calculated by 10 megawatts of photovoltaic plant of generated energy,
Annual electricity generating capacity can at least increase by 30-60 megawatts.
The equal water of prior art is reached as foundation, the other performance of this cell piece according to the related experiment carried out
It is flat.
Solar energy crystal-silicon battery slice of the present invention for component when manufacturing, more by the way of Series connection welding
Block cell piece is connected to one piece, and such a mode does not change existing component production technology, substantially reduces component production cost.
The thin grid line of solar energy crystal-silicon battery slice of the present invention, it is to be used to collect crystal silicon material by caused after illumination
Electric current.And the welding being welded on thin grid line then plays a part of collecting electric current on thin grid line.Also, the reservation at main gate line both ends
Part is used to strengthen welding effect, enhancing welding pulling force.
The connected mode of polylith cell piece still uses Series connection welding, without changing welding material and need not change component
Production technology and equipment.
Therefore the present invention reduces cost, improves generated energy outside the basic function for ensureing solar energy crystal-silicon battery slice,
There is directive significance for whole solar cell board industry, promoted the progress in China solar panel field significantly, have
There is good market promotion prospect.
Brief description of the drawings
Fig. 1 present invention is without welding positive structure schematic；
Fig. 2 structure schematic diagrams of the present invention；
Fig. 3 present invention is without welding side structure schematic diagram；
Fig. 4 present invention band weldings apply the structural representation on solar components；
Fig. 5 main grid end mplifying structure schematic diagrams of the present invention；
Fig. 6 main grid end mplifying structure schematic diagrams of the present invention；
Fig. 7 main grid end mplifying structure schematic diagrams of the present invention；
Fig. 8 main grid end mplifying structure schematic diagrams of the present invention；
Fig. 9 main grid end mplifying structure schematic diagrams of the present invention；
Rectangle welding structural representation used in Figure 10 present invention；
Circular welding structural representation used in Figure 11 present invention；
Oval welding structural representation used in Figure 12 present invention；
The structural representation of Figure 13 embodiment of the present invention two；
The structural representation of Figure 14 embodiment of the present invention three；
The structural representation of Figure 15 embodiment of the present invention four.
In figure：1 cell piece；2 main grid ends；3 thin grid lines；4 backplates；5 face glass；6 back glass；7 weldings；
8EVA layers；9 welding enhancing points；10 enhancing optical effect portions；701 rectangle weldings；702 circular weldings；703 oval weldings.
Embodiment
The present invention will be further described below in conjunction with the accompanying drawings.
Embodiment one
As shown in figure 1, a kind of high-efficiency solar is without main grid crystal-silicon battery slice, including cell piece 1, thin grid line 3 and back side electricity
Pole 4, laterally gather thin grid line 3 for the front of cell piece 1, and back side array is provided with backplate 4, the thin grid line 3 of cell piece 1 it is vertical
The both ends in direction are provided with main grid end 2, without main gate line on the thin grid line 3 between main grid end 2, main grid end 2 it
Between thin grid line vertical line on be interval with welding enhancing point 9 and enhancing electrical connection effect portion 10.
Also include welding 7, the connection between cell piece 1 is welding welding, and the covering join domain of welding is a pair of main grids
Thin grid line and welding enhancing point 9 between end, main grid end.
Welding enhancing point 9 electrically connects effect portion 10 point-blank with enhancing.
The length of main grid end 2 is 2-20mm, width 0.2-1.2mm.
The quantity of main grid end 2 is 2-6 pairs.Generally, conventional cell piece includes the main gate line of different bar numbers, such as
There are two main grid cell pieces, three main gate line cell pieces, four main gate line cell pieces, five main gate line cell pieces even a plurality of master
Grid line cell piece.Different bar number main gate lines can have an impact to some aspects of cell piece, such as two main gate line cell pieces may
Cell piece cost can be reduced but reduce its electric current collection ability, five main gate lines increase its electric current collection ability but increased
Big silver paste usage amount and reduce effective illuminating area.
Although the crystal-silicon battery slice described in this invention does not have main gate line, the cell piece need to coordinate welding to use, main
The termination number that grid line retains influences still to exist on it.By experiment, it is thinner thinner to have verified that the cell piece can coordinate for we
Welding is used, so shading-area problem we can be with control in place.For retaining two or three pairs of main grid ends, its
Silver paste usage amount can be further reduced, further increases the effective shading-area of silicon chip.For retaining five pairs or six pairs of main grid line ends
Head, it can ensure while existing generated energy, further lift the ability that welding collects electric current in silicon chip.And for this
Invention, it is believed that most preferably 4 pairs of the termination number that main gate line retains.
The shape of main grid end 2 includes rectangle, ellipse, triangle, circle, trapezoidal and irregular strip.
Main grid end 2, welding enhancing 9 material therefors of point are high-purity silver paste or silver-colored aluminum slurry.
The material therefor of enhancing electrical connection effect portion 10 is silver paste or electrocondution slurry.
The shape of welding enhancing point 9 includes rectangle, circle, ellipse and triangle, the shape in enhancing electrical connection effect portion 10
It is linear that shape includes linear, rhombus, fold-line-shaped or rounding off.
The length most preferably 2-10 millimeters of welding enhancing point 9, width most preferably 0.2-1.2 millimeters.
The width in enhancing electrical connection effect portion 10 is 60-120 microns, and its height is 10-40 microns.
Existing cell piece manufacture craft is：Crystalline silicon substrate-surface wool manufacturing-diffuses to form PN junction-surface coated with antireflection and applied
Layer-print electrode.
Wherein crystalline silicon substrate is that (purity reaches more than 6N, i.e., 99.9999%) for high-purity polysilicon or monocrystalline silicon；
Silicon chip surface making herbs into wool refers to that carrying out corrosion in silicon chip surface forms scraggly shape, to increase silicon chip to the sun
The capture rate of light；
Diffuse to form PN junction to refer to carry out silicon chip phosphorus or boron doping so that cell piece both sides form P-type silicon and N-type respectively
Silicon；Silicon chip surface coated with antireflection film refers to deposit one layer of silicon nitride film in silicon chip surface, to reduce the reflectivity of sunshine；
The finger that prints electrode includes printing aluminium back surface field, backplate, thin grid line and main gate line respectively to silicon chip both sides.
The cell piece of prior art is the electricity that thin grid line deploys, main gate line deploys, backplate deploys
Pond piece, then into component production process, the welding between two panels cell piece or multi-disc cell piece, welded using welding,
Then plus EVA sealants, the assembling procedure of solar double-glass assemblies is finally entered.
The present invention is in specific implementation process, and cell piece is thin grid line is deployed, main gate line tip placement is finished, welded
Enhancing point deploys, strengthen electrically connect effect portion deploy, the cell piece that backplate deploys, then by main gate line
Dispense.Then into the production process of component, welding welding, thin grid line is electrically connected by welding, reaches electric current collection
Function, then add EVA sealants, finally enter the assembling procedure of solar double-glass assemblies.
Embodiment two
With enhancing optical effect portion 10 point-blank, enhancing optical effect portion 10 is rhombus to welding enhancing point 9, other
With embodiment one.
Embodiment three
For welding enhancing point 9 with strengthening optical effect portion 10 not point-blank, enhancing optical effect portion 10 is straight line, its
He is the same as embodiment one.
Example IV
For welding enhancing point 9 with strengthening optical effect portion 10 not point-blank, enhancing optical effect portion 10 is rhombus, its
He is the same as embodiment one.
Certainly, the above is only presently preferred embodiments of the present invention, it is impossible to is considered as limiting the embodiment to invention
Scope.The present invention is also not limited to the example above, and those skilled in the art are in the essential scope of the present invention
The equivalent change made and improvement etc., all should belong to patent covering scope of the present invention.
Claims (11)
1. a kind of high-efficiency solar is without main gate line crystal-silicon battery slice, including cell piece (1), thin grid line (3) and backplate (4),
Laterally densely covered thin grid line (3), back side array are provided with backplate (4) in the front of cell piece (1), it is characterised in that：Cell piece (1)
The both ends of vertical direction of thin grid line (3) be provided with main grid end (2), on the thin grid line (3) between main grid end (2)
Without main gate line, welding enhancing point (9) and enhancing electrical connection effect are interval with the vertical line of the thin grid line between main grid end (2)
Fruit portion (10).
2. high-efficiency solar according to claim 1 is without main gate line crystal-silicon battery slice, it is characterised in that：Also include welding
(7), the connection between cell piece (1) is welded for welding, and the covering join domain of welding is a pair of main grid ends, main grid line end
Thin grid line and welding enhancing point (9) between head.
3. high-efficiency solar according to claim 1 is without main gate line crystal-silicon battery slice, it is characterised in that：Welding enhancing point
(9) electrically connect effect portion (10) point-blank with enhancing or be provided separately.
4. high-efficiency solar according to claim 1 is without main gate line crystal-silicon battery slice, it is characterised in that：Main grid end
(2) length is 2-20mm, width 0.2-1.2mm.
5. high-efficiency solar according to claim 1 is without main gate line crystal-silicon battery slice, it is characterised in that：Main grid end
(2) quantity is 2-6 pairs.
6. high-efficiency solar according to claim 1 is without main gate line crystal-silicon battery slice, it is characterised in that：Main grid end
(2) shape includes rectangle, ellipse, triangle, circle, trapezoidal and irregular strip.
7. high-efficiency solar according to claim 1 is without main gate line crystal-silicon battery slice, it is characterised in that：Main grid end
(2), welding enhancing point (9) is high-purity silver paste or silver-colored aluminum slurry.
8. high-efficiency solar according to claim 1 is without main gate line crystal-silicon battery slice, it is characterised in that：Enhancing electrical connection effect
Fruit portion (10) is silver paste or electrocondution slurry.
9. high-efficiency solar according to claim 1 is without main gate line crystal-silicon battery slice, it is characterised in that：Welding enhancing point
(9) shape includes rectangle, circle, ellipse and triangle, and the shape of enhancing electrical connection effect portion (10) includes linear, water chestnut
Shape, fold-line-shaped or rounding off are linear.
10. high-efficiency solar according to claim 1 is without main gate line crystal-silicon battery slice, it is characterised in that：Each pair main gate line
Welding enhancing point (9) number most preferably 1-5 between termination.
11. high-efficiency solar according to claim 1 is without main gate line crystal-silicon battery slice, it is characterised in that：Welding enhancing point
(9) length most preferably 2-10 millimeters, width most preferably 0.2-1.2 millimeters, the width of enhancing electrical connection effect portion (10) is 60-
120 microns, its height is 10-40 microns.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610625471.0A CN107895748A (en) | 2016-09-06 | 2016-09-06 | High-efficiency solar is without main grid crystal-silicon battery slice |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610625471.0A CN107895748A (en) | 2016-09-06 | 2016-09-06 | High-efficiency solar is without main grid crystal-silicon battery slice |
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| CN107895748A true CN107895748A (en) | 2018-04-10 |
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ID=61802421
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| CN201610625471.0A Pending CN107895748A (en) | 2016-09-06 | 2016-09-06 | High-efficiency solar is without main grid crystal-silicon battery slice |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112355428A (en) * | 2020-11-05 | 2021-02-12 | 苏州沃特维自动化系统有限公司 | Welding strip positioning method for series welding of photovoltaic cells |
| CN117712197A (en) * | 2024-01-31 | 2024-03-15 | 浙江晶科能源有限公司 | Solar cell and photovoltaic module |
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| CN205985031U (en) * | 2016-09-06 | 2017-02-22 | 青岛瑞元鼎泰新能源科技有限公司 | High -efficient solar energy does not have main grid line crystal silicon battery piece |
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| CN203752663U (en) * | 2013-10-29 | 2014-08-06 | 宁夏银星能源股份有限公司 | Solar cell front electrode screen printing plate |
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