CN110196268A - Gas sensor and its ceramic chip and insulation paste and production method - Google Patents
Gas sensor and its ceramic chip and insulation paste and production method Download PDFInfo
- Publication number
- CN110196268A CN110196268A CN201910551579.3A CN201910551579A CN110196268A CN 110196268 A CN110196268 A CN 110196268A CN 201910551579 A CN201910551579 A CN 201910551579A CN 110196268 A CN110196268 A CN 110196268A
- Authority
- CN
- China
- Prior art keywords
- dielectric isolation
- isolation layer
- insulation paste
- layer
- gas sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009413 insulation Methods 0.000 title claims abstract description 56
- 239000000919 ceramic Substances 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 79
- 238000002955 isolation Methods 0.000 claims abstract description 74
- 239000002245 particle Substances 0.000 claims abstract description 63
- 239000011148 porous material Substances 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 239000002002 slurry Substances 0.000 claims description 21
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 14
- 239000000654 additive Substances 0.000 claims description 9
- 230000000996 additive effect Effects 0.000 claims description 9
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 6
- 239000010439 graphite Substances 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 5
- 239000000395 magnesium oxide Substances 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 claims description 3
- 229920002472 Starch Polymers 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 235000019698 starch Nutrition 0.000 claims description 2
- 239000008107 starch Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 239000004411 aluminium Substances 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000003610 charcoal Substances 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000000446 fuel Substances 0.000 abstract description 7
- 238000000034 method Methods 0.000 description 8
- 230000035939 shock Effects 0.000 description 5
- 230000001351 cycling effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000498 ball milling Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000004615 ingredient Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 208000021760 high fever Diseases 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- AHKZTVQIVOEVFO-UHFFFAOYSA-N oxide(2-) Chemical compound [O-2] AHKZTVQIVOEVFO-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000007613 slurry method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B38/00—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Composite Materials (AREA)
- Measuring Oxygen Concentration In Cells (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
This application discloses a kind of gas sensor and its ceramic chip and insulation paste and production methods.The insulation paste includes pore former, main body alumina particle and cooperation alumina particle；The particle size range of the main body alumina particle is 1-2 μm；The particle size range of the cooperation alumina particle is 300-500nm or 5-10 μm.The production method uses the insulation paste.The ceramic chip includes heater, and the heater includes upper, middle and lower-ranking, respectively upper dielectric isolation layer, heating conducting wire and lower dielectric isolation layer；The main component of the upper dielectric isolation layer and the lower dielectric isolation layer is aluminium oxide；The upper dielectric isolation layer and the lower dielectric isolation layer are the structure with hole.The gas sensor includes the ceramic chip.The application can lift gas sensor ceramic chip heater to the tolerance of fuel factor.
Description
Technical field
This application involves gas sensor technical field, in particular to a kind of gas sensor and its ceramic chip and insulation
Slurry and production method.
Background technique
Currently, the gas sensor ceramic chip being applied under hot environment is mainly using zirconium oxide as matrix.Its work
Principle is the oxide ion conduction characteristic according to Zirconia electrolytic at high temperature, the two-way work of this special battery and electrolytic cell by energy
Make mechanism.The main source of high temperature is the heater being built in zirconia base.Main group of heater becomes conducting wire
With dielectric isolation layer.The main material of dielectric isolation layer is non-conductive material, such as aluminium oxide.
General gas sensor, can be with cold cycling under operating condition.Heater is in very harsh fuel factor ring
In border.Especially the zirconium oxide of the thermal expansion coefficient of the aluminium oxide of dielectric isolation layer and matrix, heating conducting wire mismatch, meeting
The avalanche and failure of direct bring ceramic structure, lead to sensor cisco unity malfunction.In addition, heater starts in sensor
Moment, temperature steeply rises.The heat of the dielectric isolation layer of sensor sharply increases, if heat cannot be transmitted effectively,
Also it can cause the avalanche of structure.
The upper and lower faces of the conducting wire for being distributed in heater of dielectric isolation layer.The upper and lower faces of dielectric isolation layer
Structure is asymmetrical relative to ceramic chip.It is the cavity air slot of ceramic chip that top dielectric isolation layer is corresponding, and under
It is the zirconia base layer of ceramic chip that square dielectric isolation layer is corresponding.Such unsymmetric structure can also be directly resulted in and heated
Start moment, the heat that the dielectric isolation layer of upper and lower faces is faced is also different, and the structure of dielectric isolation layer easily fails.
Above fuel factor can directly result in the lost of life of sensor ceramic chip.
The disclosure of background above technology contents is only used for auxiliary and understands present invention design and technical solution, not
The prior art for necessarily belonging to the application shows that above content has disclosed in the applying date of the application in no tangible proof
In the case where, above-mentioned background technique should not be taken to the novelty and creativeness of evaluation the application.
Summary of the invention
The application proposes a kind of gas sensor and its ceramic chip and insulation paste and production method, can improve ceramic core
The entire heater of piece is to the tolerance of fuel factor, to improve the service life of heater.
In a first aspect, the application provides a kind of insulation paste of gas sensor ceramic chip, including pore former, main body
Alumina particle and cooperation alumina particle；
The particle size range of the main body alumina particle is 1-2 μm；
The particle size range of the cooperation alumina particle is 300-500nm or 5-10 μm.
It in some preferred embodiments, further include additive.
In some preferred embodiments, the concrete form of the pore former includes graphite, carbon black, ammonium nitrate and shallow lake
Powder.
In some preferred embodiments, the additive includes at least two in silica, magnesia and aluminium oxide
Person.
In some preferred embodiments, the mass percent of the pore former is 10%-40%.
In some preferred embodiments, the mass percent of the additive is within 3%.
In second aspect, the application provides a kind of production method of gas sensor ceramic chip heater, uses upper layer
Insulation paste and lower layer's insulation paste, the upper layer insulation paste and lower layer's insulation paste are above-mentioned insulation paste；Institute
The structure for stating the hole that upper layer insulation paste can be formed is different from the structure of hole that lower layer's insulation paste can be formed；
The upper layer insulation paste and lower layer's insulation paste are mixed to form upper slurry and lower slurry respectively；
Respectively by the upper slurry and the lower slurry be printed onto heating conducting wire the upper and lower, obtain to
Handle heater；
Subsequent processing is carried out to the heater to be processed, obtains the heater of integral structure.
In some preferred embodiments, described includes: to described to the heater progress subsequent processing to be processed
Heater to be processed is laminated, is cut and is sintered.
In the third aspect, the application provides a kind of gas sensor ceramic chip, including heater, and the heater includes
Upper, middle and lower-ranking, respectively upper dielectric isolation layer, heating conducting wire and lower dielectric isolation layer；
The main component of the upper dielectric isolation layer and the lower dielectric isolation layer is aluminium oxide；
The upper dielectric isolation layer and the lower dielectric isolation layer are the structure with hole；
The hole of the upper dielectric isolation layer is different from the hole of the lower dielectric isolation layer；
The top of the upper dielectric isolation layer is the cavity air slot of the gas sensor ceramic chip；
The lower section of the lower dielectric isolation layer is the zirconia base layer of the gas sensor ceramic chip.
In some preferred embodiments, hole of the porosity of the upper dielectric isolation layer than the lower dielectric isolation layer
Gap rate big 5% to 15%.
In some preferred embodiments, the upper dielectric isolation layer and the lower dielectric isolation layer include different grains
The alumina particle of diameter.
In some preferred embodiments, the alumina particle of the different-grain diameter includes main body alumina particle and matches
Close alumina particle；The particle size range of the main body alumina particle is 1-2 μm；The particle size range of the cooperation alumina particle
It is 300-500nm or 5-10 μm.
In fourth aspect, the application also provides a kind of gas sensor, including above-mentioned gas sensor ceramic chip.
Compared with prior art, the beneficial effect of the application has:
Can lift gas sensor ceramic chip heater to the tolerance of fuel factor, make its matching expansion, can mention
High fever transmitting, can effectively improve the service life of heater.
Detailed description of the invention
Fig. 1 is the flow diagram of the production method of the gas sensor ceramic chip heater of the embodiment of the present application；
Fig. 2 is the structural schematic diagram of the gas sensor ceramic chip of the embodiment of the present application；
Fig. 3 adaptively shows the front knot of the dielectric isolation layer of the gas sensor ceramic chip of the embodiment of the present application
Structure；
Fig. 4 (a) is a kind of schematic diagram of hole configurations of the embodiment of the present application；
Fig. 4 (b) is a kind of microgram of hole configurations of the embodiment of the present application；
Fig. 5 is the fuel factor comparison diagram of the embodiment of the present application.
Specific embodiment
In order to which the embodiment of the present application technical problem to be solved, technical solution and beneficial effect is more clearly understood,
Below in conjunction with Fig. 1 to Fig. 5 and embodiment, the application is further elaborated.It should be appreciated that described herein specific
Embodiment only to explain the application, is not used to limit the application.
It is to be appreciated that term " length ", " width ", "upper", "lower", "front", "rear", "left", "right", "vertical",
The orientation or positional relationship of the instructions such as "horizontal", "top", "bottom" "inner", "outside" is that orientation based on the figure or position are closed
System is merely for convenience of description the embodiment of the present application and simplifies description, rather than the device or element of indication or suggestion meaning must
There must be specific orientation, be constructed and operated in a specific orientation, therefore should not be understood as the limitation to the application.
In addition, term " first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include one or more this feature.In the description of the embodiment of the present application, the meaning of " plurality " is two or two
More than, unless otherwise specifically defined.
The present embodiment provides a kind of gas sensor ceramic chips, including heater.The heater of the present embodiment include it is upper,
In, it is three layers lower.Referring to figs. 2 and 3, this three layers are respectively upper dielectric isolation layer 1, heating conducting wire 2 and lower dielectric isolation layer
3。
The main component of upper dielectric isolation layer 1 and lower dielectric isolation layer 3 is aluminium oxide.
Upper dielectric isolation layer 1 and lower dielectric isolation layer 3 are the structure with hole.These holes can be used for hot transmitting.
The diaphragm with hole or plate may be selected as upper dielectric isolation layer 1 and lower dielectric isolation layer 3；The diaphragm of hole or
Plate can be formed by laser processing；Aftermentioned production method it can also form upper 1 He of dielectric isolation layer through this embodiment
Lower dielectric isolation layer 3.
The hole of upper dielectric isolation layer 1 is different from the hole of lower dielectric isolation layer 3.It is embodied in the size in two layers of hole
The distribution in different, porosity difference or hole is different.
The top of upper dielectric isolation layer 1 be gas sensor ceramic chip cavity air slot, in other words on be dielectrically separated from
Layer 1 it is corresponding be ceramic chip cavity air slot.The lower section of lower dielectric isolation layer 3 is the oxidation of gas sensor ceramic chip
Zirconium base layer, descend in other words dielectric isolation layer 3 it is corresponding be ceramic chip zirconia base layer 4.In this way, just in gas sensing
A kind of asymmetrical structure is formed in device ceramic chip.
Upper dielectric isolation layer 1 is also asymmetrical with lower dielectric isolation layer 3, it will be appreciated that is by different aluminium oxide structure layers
Applied to upper dielectric isolation layer 1 and lower dielectric isolation layer 3.It, can be by the hole of upper dielectric isolation layer 1 according to the difference of thermal heat transfer capability
Gap rate is adjusted to higher level, is about higher by 5% to 15% than lower dielectric isolation layer 3.
In the present embodiment, upper dielectric isolation layer 1 and lower dielectric isolation layer 3 are the structure of hole, and upper and lower insulation every
Absciss layer is asymmetrical layout, can effectively promote the heat resistanceheat resistant effect capability of the heater of ceramic chip.
The present embodiment also provides a kind of gas sensor, including the above-mentioned gas sensor ceramic chip of the present embodiment.
The present embodiment provides a kind of insulation pastes of gas sensor ceramic chip, including pore former and alumina particle.
In the present embodiment, with reference to Fig. 4 (a) and Fig. 4 (b), alumina particle includes different-grain diameter aluminium oxide (Al2O3)
Mixing, including the mixing of two kinds or more of powders.Specifically, alumina particle includes main body alumina particle and cooperation aluminium oxide
Particle.The particle size range of main body alumina particle is 1-2 μm.Cooperation alumina particle particle size range be 300-500nm or
5-10μm。
The fit system of the alumina particle of different-grain diameter can diversification.The volume of general control main body alumina particle
Score cooperates the ingredient of alumina particle that can be adjusted according to actual design 70% or so.
The ingredient of pore former can escape material in other words for the expendable materials such as graphite, carbon black, ammonium nitrate or starch, these
Material is volatilizable at high temperature to form certain hole configurations.
The mass fraction of pore former is between 10%-40%.Alumina particle is the main component of insulation paste, specifically
Mass fraction can select as needed, for example remaining is alumina particle.
In other embodiments, it is that mass percent exists 0%-3% in other words that insulation paste, which may also include mass percent,
Additive within 3%, preferably 2%-3%.The main component of additive is the mixture of silica, magnesia, aluminium oxide；
At least the two in silica, magnesia and aluminium oxide in other words.Main body alumina particle is under the action of additive, sintering
Ability can be promoted effectively, while can form hole configurations.
Insulation paste in the present embodiment can effectively promote insulating layer by being adjusted the hole to be formed to ingredient and exist
Matching on the zirconia base of gas sensor ceramic chip, the aluminium oxide mixed sintering of different-grain diameter can form multiplicity
Hole configurations can promote the ability of heat resistanceheat resistant effect.
The present embodiment provides a kind of production methods of gas sensor ceramic chip heater.This method is insulated using upper layer
Slurry and lower layer's insulation paste.Upper layer insulation paste and lower layer's insulation paste are the above-mentioned insulation paste of the present embodiment.Wherein,
The structure for the hole that upper layer insulation paste can be formed is different from the structure of hole that lower layer insulation paste can be formed.With reference to Fig. 1, originally
The production method of embodiment includes step S1 to step S3.
Step S1, upper layer insulation paste and lower layer's insulation paste are mixed to form upper slurry and lower slurry respectively.
Step S2, respectively by upper slurry and lower slurry be printed onto heating conducting wire the upper and lower, obtain to
Handle heater.
Step S3, subsequent processing is carried out to heater to be processed, obtains the heater of integral structure.Wherein, subsequent place
A kind of form of reason is that heater to be processed is laminated, is cut and is sintered.
The hole of upper dielectric isolation layer 1 is different from the hole of lower dielectric isolation layer 3, can be by the upper dielectric isolation layer of formation
Component ratio in the slurry of 1 slurry and lower dielectric isolation layer 3 is adjusted, and specifically may make upper slurry and lower slurry
Main body alumina particle partial size it is different.
For the heater that the production method of the present embodiment obtains, upper dielectric isolation layer 1 and lower dielectric isolation layer 3 include
The alumina particle of different-grain diameter specifically includes main body alumina particle and cooperation alumina particle.Main body alumina particle
Particle size range is 1-2 μm.The particle size range for cooperating alumina particle is 300-500nm or 5-10 μm.
The present embodiment is illustrated below by experimental example and comparative example.
There are three types of insulation paste, respectively insulation paste A1, insulation paste A2 and insulation paste A3.
Insulation paste A1: alumina particle is about about 500nm in 1-2um, the D50 of ball milling to particle diameter distribution, addition
Pore former graphite 30%, is mixed to form slurry.
Insulation paste A2: alumina particle is about about 500nm in 1-2um, the D50 of ball milling to particle diameter distribution, addition
Pore former graphite 20%, is mixed to form slurry.
Insulation paste A3: alumina particle is about about 500nm in 1-2um, the D50 of ball milling to particle diameter distribution, is not added
Add pore former graphite.
Experimental example 1
Insulation paste A1 is printed onto the upper layer of heating conducting wire, insulation paste A2 is printed onto heating conducting wire
Lower layer.By subsequent a series of lamination, cutting and sintering process, the integral structure of heater is formed, label sample is
Samples-A, as shown in Figure 4.
As a comparison, other two kinds of samples, respectively Samples-B and Samples-C are prepared for.
Comparative example 1
Samples-B is the symmetrical insulation system of upper and lower layer that insulation paste A2 is formed.
Comparative example 2
Samples-C is the symmetrical insulation system that insulation paste A3 is formed.
Three kinds of samples are divided into two groups, to compare thermal shock and cold cycling characteristic.
The method of thermal shock is that 950 DEG C are started to from room temperature, and the starting time is no more than 5 seconds, keeps the temperature 1 second, Temperature fall arrives
Room temperature recycles the process.
Cold cycling method is that 900 DEG C are started to from room temperature, and the starting time is no more than 10 seconds, keeps the temperature 10 seconds, wind cooling temperature lowering
To room temperature, 10 seconds are kept the temperature, the process is recycled.
Functional lifetime is directly compared, contrast and experiment is as shown in Figure 5.For thermal shock, Samples-A,
The effective degree of Samples-B and Samples-C is respectively as follows: 600,500 and 200.For thermal cycle, Samples-A,
The effective degree of Samples-B and Samples-C is respectively as follows: 1200,950 and 600.The result of Samples-A it is obvious it is excellent in
Samples-B, Samples-B are substantially better than Samples-C.It can be seen that the sample of hole structure has more thermal shock
Tolerance, hole and asymmetrical structure have better tolerance to thermal shock and cold cycling.
As described above, the present embodiment can lift gas sensor ceramic chip heater to the tolerance energy of fuel factor
Power makes its matching thermal expansion, hot transmitting can be improved, can effectively improve the service life of heater.
The above content is combining specific/preferred embodiment to be further described to made by the application, cannot recognize
The specific implementation for determining the application is only limited to these instructions.For those of ordinary skill in the art to which this application belongs,
Without departing from the concept of this application, some replacements or modifications can also be made to the embodiment that these have been described,
And these substitutions or variant all shall be regarded as belonging to the protection scope of the application.
Claims (10)
1. a kind of insulation paste of gas sensor ceramic chip, it is characterised in that: including pore former, main body alumina particle and
Cooperate alumina particle；
The particle size range of the main body alumina particle is 1-2 μm；
The particle size range of the cooperation alumina particle is 300-500nm or 5-10 μm.
2. insulation paste according to claim 1, it is characterised in that: further include additive.
3. insulation paste according to claim 1, it is characterised in that: the concrete form of the pore former includes graphite, charcoal
Black, ammonium nitrate and starch.
4. insulation paste according to claim 2, it is characterised in that: the additive includes silica, magnesia and oxygen
Change at least the two in aluminium；The mass percent of the additive is within 3%.
5. insulation paste according to claim 1, it is characterised in that: the mass percent of the pore former is 10%-
40%.
6. a kind of production method of gas sensor ceramic chip heater, it is characterised in that: using upper layer insulation paste under
Layer insulation paste, the upper layer insulation paste and lower layer's insulation paste are described exhausted to any one of 5 according to claim 1
Edge slurry；The structure for the hole that the structure for the hole that the upper layer insulation paste can be formed and lower layer's insulation paste can be formed
It is different；
The upper layer insulation paste and lower layer's insulation paste are mixed to form upper slurry and lower slurry respectively；
The upper slurry and the lower slurry are printed onto the upper and lower of heating conducting wire respectively, obtained to be processed
Heater；
Subsequent processing is carried out to the heater to be processed, obtains the heater of integral structure.
7. production method according to claim 6, it is characterised in that described to carry out subsequent place to the heater to be processed
Reason includes: that the heater to be processed is laminated, is cut and is sintered.
8. a kind of gas sensor ceramic chip, it is characterised in that: including heater, the heater includes upper, middle and lower three
Layer, respectively upper dielectric isolation layer, heating conducting wire and lower dielectric isolation layer；
The main component of the upper dielectric isolation layer and the lower dielectric isolation layer is aluminium oxide；
The upper dielectric isolation layer and the lower dielectric isolation layer are the structure with hole；
The hole of the upper dielectric isolation layer is different from the hole of the lower dielectric isolation layer；
The top of the upper dielectric isolation layer is the cavity air slot of the gas sensor ceramic chip；
The lower section of the lower dielectric isolation layer is the zirconia base layer of the gas sensor ceramic chip.
9. gas sensor ceramic chip according to claim 8, it is characterised in that: the hole of the upper dielectric isolation layer
Rate is bigger by 5% to 15% than the porosity of the lower dielectric isolation layer；The upper dielectric isolation layer and the lower dielectric isolation layer are equal
Alumina particle including different-grain diameter；The alumina particle of the different-grain diameter includes main body alumina particle and cooperation oxidation
Alumina particles；The particle size range of the main body alumina particle is 1-2 μm；The particle size range of the cooperation alumina particle is 300-
500nm or 5-10 μm.
10. a kind of gas sensor, it is characterised in that: including gas sensor ceramic chip according to claim 8 or claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910551579.3A CN110196268B (en) | 2019-06-24 | 2019-06-24 | Gas sensor, ceramic chip thereof, insulating slurry and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910551579.3A CN110196268B (en) | 2019-06-24 | 2019-06-24 | Gas sensor, ceramic chip thereof, insulating slurry and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110196268A true CN110196268A (en) | 2019-09-03 |
| CN110196268B CN110196268B (en) | 2024-06-07 |
Family
ID=67755104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910551579.3A Active CN110196268B (en) | 2019-06-24 | 2019-06-24 | Gas sensor, ceramic chip thereof, insulating slurry and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110196268B (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6380114B1 (en) * | 1998-06-15 | 2002-04-30 | Vesuvius Crucible Company | Insulating refractory material |
| KR20040105370A (en) * | 2003-06-07 | 2004-12-16 | 한국과학기술연구원 | Ceramic membrane using ceramic tape and fabrication method thereof |
| US20090084673A1 (en) * | 2005-06-30 | 2009-04-02 | Denso Corporation | Gas sensor element and method for manufacturing same |
| CN102005254A (en) * | 2010-09-15 | 2011-04-06 | 合肥左天电子科技有限公司 | Electric insulation material for lamellar detection element of gas sensor and preparation method thereof |
| CN103776888A (en) * | 2014-01-15 | 2014-05-07 | 深圳市普利斯通传感科技有限公司 | Oxygen sensor for car based on oxide insulating slurry and manufacturing method thereof |
| CN104064705A (en) * | 2014-06-09 | 2014-09-24 | 东莞市魔方新能源科技有限公司 | Composite membrane for lithium ion secondary battery, manufacturing method of composite membrane and electrochemical device containing membrane |
| CN207516302U (en) * | 2017-11-03 | 2018-06-19 | 深圳市森世泰科技有限公司 | A kind of gas sensor and its ceramic chip |
| CN108760864A (en) * | 2018-06-06 | 2018-11-06 | 成都科锐传感技术有限公司 | Chip oxygen sensor and preparation method thereof without extra insulation and bending compensation |
| CN210243549U (en) * | 2019-06-24 | 2020-04-03 | 深圳市森世泰科技有限公司 | Gas sensor and ceramic chip thereof |
-
2019
- 2019-06-24 CN CN201910551579.3A patent/CN110196268B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6380114B1 (en) * | 1998-06-15 | 2002-04-30 | Vesuvius Crucible Company | Insulating refractory material |
| KR20040105370A (en) * | 2003-06-07 | 2004-12-16 | 한국과학기술연구원 | Ceramic membrane using ceramic tape and fabrication method thereof |
| US20090084673A1 (en) * | 2005-06-30 | 2009-04-02 | Denso Corporation | Gas sensor element and method for manufacturing same |
| CN102005254A (en) * | 2010-09-15 | 2011-04-06 | 合肥左天电子科技有限公司 | Electric insulation material for lamellar detection element of gas sensor and preparation method thereof |
| CN103776888A (en) * | 2014-01-15 | 2014-05-07 | 深圳市普利斯通传感科技有限公司 | Oxygen sensor for car based on oxide insulating slurry and manufacturing method thereof |
| CN104064705A (en) * | 2014-06-09 | 2014-09-24 | 东莞市魔方新能源科技有限公司 | Composite membrane for lithium ion secondary battery, manufacturing method of composite membrane and electrochemical device containing membrane |
| CN207516302U (en) * | 2017-11-03 | 2018-06-19 | 深圳市森世泰科技有限公司 | A kind of gas sensor and its ceramic chip |
| CN108760864A (en) * | 2018-06-06 | 2018-11-06 | 成都科锐传感技术有限公司 | Chip oxygen sensor and preparation method thereof without extra insulation and bending compensation |
| CN210243549U (en) * | 2019-06-24 | 2020-04-03 | 深圳市森世泰科技有限公司 | Gas sensor and ceramic chip thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110196268B (en) | 2024-06-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10167235B2 (en) | Joined body and method for producing the same | |
| KR100464466B1 (en) | Sensor element and its manufacturing method | |
| CN103529107B (en) | Limited current type oxygen sensor and manufacturing method thereof | |
| CN103508733B (en) | A kind of preparation method of sheet structure oxygen sensor | |
| CN106467396A (en) | A kind of preparation method of on-deformable large scale aluminum nitride ceramic substrate | |
| CN107396466A (en) | Electric slurry and preparation method thereof, thick film circuit chip thermal source and preparation method thereof | |
| CN109437863A (en) | A kind of high intensity HTCC ceramic material and preparation method thereof | |
| WO2018064888A1 (en) | Chip type oxygen sensor chip | |
| AU2008254541B2 (en) | Thermo-mechanical robust solid oxide fuel cell device assembly | |
| CN102910903A (en) | Low-temperature cofiring method of zirconia-based sensor | |
| CN110196268A (en) | Gas sensor and its ceramic chip and insulation paste and production method | |
| JP2007084367A (en) | Method of manufacturing high thermal conductive ceramic sintered compact and high thermal conductive ceramic sintered compact | |
| CN101949882B (en) | Flat plate type oxygen sensor chip structure and manufacturing method thereof | |
| JP5892105B2 (en) | A / F sensor element and manufacturing method thereof | |
| JP2003344348A (en) | Oxygen sensor element | |
| CN102376378A (en) | Heating electrode paste, heating electrode and planar oxygen sensor comprising heating electrode | |
| CN108264359B (en) | Ceramic heating element and preparation method thereof | |
| JP2004327255A (en) | Manufacturing method for ceramic heater structure and ceramic heater structure | |
| CN210243549U (en) | Gas sensor and ceramic chip thereof | |
| CN102636527A (en) | Inlaid plate-shaped oxygen sensor and preparation method thereof | |
| JP2001281219A (en) | Air-fuel ratio sensor element | |
| JPH04329289A (en) | Ceramic heater | |
| CN104062343A (en) | Sensor element and exhaust gas sensor having a sensor element | |
| CN113551530A (en) | Casket-like bowl | |
| CN202974923U (en) | Novel structure of planar oxygen sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 40007466 Country of ref document: HK |
|
| GR01 | Patent grant |