CN110190827A - A kind of ion beam frequency modulation method based on surface acoustic wave - Google Patents
A kind of ion beam frequency modulation method based on surface acoustic wave Download PDFInfo
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- CN110190827A CN110190827A CN201910461793.XA CN201910461793A CN110190827A CN 110190827 A CN110190827 A CN 110190827A CN 201910461793 A CN201910461793 A CN 201910461793A CN 110190827 A CN110190827 A CN 110190827A
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- frequency
- ion
- frequency modulation
- etching
- ion beam
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
- H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
Abstract
The present invention relates to surface acoustic wave techniques fields, in particular to a kind of ion beam frequency modulation method based on surface acoustic wave, include: to be acquired using probe to the distribution of sound table device frequency, practical chip wafer position and original frequency are matched with equipment using switching software；The frequency that chip needs to adjust is obtained, according to the base material of chip, oxide on surface and different THICKNESS CALCULATION sweep parameters, realizes target frequency value；In frequency-modulating process, argon ion is accelerated and bombards crystal column surface to remove excess stock, etching is scanned to the frequency modulation layer film within the scope of whole wafer, so that the filter frequencies of whole wafer range be made to reach target value；The present invention can be improved or reduce frequency range from 30khz to 20Mhz, while some projects, after using the technology, test passes rate is increased to 85% from 25%.
Description
Technical field
The present invention relates to surface acoustic wave techniques fields, in particular to a kind of to be based on surface acoustic wave (surface acoustic
Wave, SAW) ion beam frequency modulation method.
Background technique
SAW device is applied to the weaponrys electronic systems such as radar, communication, is the key components of system, with
System proposes that precision is higher, the higher demand of frequency, also proposed higher demand to high-frequency narrow-band device, to low frequency and narrow bandwidth
SAW device and the demand of 2Ghz or more SAW high-frequency element high freuqency accuracy are increasing.
Under current capacity of equipment, to realize that the production of such product has difficulties, only by using frequency modulation technology
To improve frequency accuracy.The frequency modulation technology generallyd use has physics frequency modulation and chemical mode of frequency regulation.
It mainly after chip is put into calibrating frequency liquid, is directly dropped by the way of chemical frequency modulation in usual SAW device production
Low aluminium film thickness and finger width, thus the frequency of raising sound table device.But reduced film thickness and finger width is not easy to be controlled
System, and be that full wafer does rough adjustment, technological parameter is uncontrolled, as a result unknown.Wet chemistry frequency modulation, only to film thickness and finger beam
It reduces, therefore frequency targets direction can only be towards Gao Xiuzheng.Chemical frequency modulation controllability is bad, and dispersibility is big after adjustment, is not suitable for
Research and production, repeatability, consistency with product are poor, the low disadvantage of the precision of product.
Physics frequency modulation technology can accurately adjust film thickness, be at present both at home and abroad producer frequently with mode of frequency regulation.With mesh
Mark frequency adjustment controllably, consistency is high, and standard deviation is small after frequency modulation, and frequency-flat improves, and frequency distribution is concentrated, frequency dispersion
Property obtain improve the advantages of.
Summary of the invention
In order to make up due to the deficiency of photoetching and filming equipment ability in SAW technique, the present invention proposes a kind of based on sound table
The ion beam frequency modulation method of surface wave, comprising: by SAW device carrying out that frequency is turned up using scanning ion beam and reducing frequency,
Crystal column surface thickness of metal film is modified and achievees the purpose that frequency modulation；Wafer material can be accurately etched, is realized to wafer
The film thickness on surface carries out the amendment of nm rank；Can by etching make figure step height increase or reduce, thus reduce or
Person improves frequency, specifically includes the following steps:
S1, the distribution of sound table device frequency is acquired using probe, using switching software the wafer core for needing frequency modulation
Location information and frequency information the input ion-beam scanning etching of piece；
S2, the frequency that chip needs to adjust is obtained, is calculated according to the base material, oxide on surface, metal thickness of chip
Scan the power of etching and the speed of scanning etching；
S3, in frequency-modulating process, argon ion is accelerated and bombards crystal column surface to come to the frequency modulation within the scope of whole wafer
Layer film is scanned etching, so that the filter frequencies of whole wafer range be made to reach target frequency value.
Further, bombardment to crystal column surface removal excess stock include at least lithium tantalate LT, aluminium titanates AT, aluminium Al,
Silica SiO2, and lithium tantalate LT, aluminium titanates AT, aluminium Al, silica are included at least in plasma beam scanning etching apparatus
Etch rate corresponding to SiO2.
Further, described to accelerate and bombard crystal column surface to remove excess stock to include: in ion source by argon ion
In, inert gas argon gas is ionized and forms plasma, i.e. argon ion, draws acceleration system and generates and is reinforcing electric field extraction band just
Ion beam focusing and is accurately controlled ion beam by the ion of charge, electrostatic lenses and arrangement for deflecting by being located at ion cylinder
It being scanned in crystal column surface, collection of ions beam bombards the secondary electron and secondary ion that sample generates, focused ion beam hot spot is obtained,
Frequency modulation layer film is performed etching using focused ion beam hot spot.
By using film thickness test equipment (reflection interference film thickness instrument or ellipsometer, four-point probe etc.) or visit
Needle test macro analyzes the film thickness of wafer or the technological ability of electrical property before frequency modulation, imports crystal column surface thickness or frequency distribution
Data, for computer sim- ulation as a result, calculating different zones etch amount and etch process parameters automatically, etch process parameters include etching speed
Degree, etch period etc..
This method innovatively proposes the piezoelectric material and oxide on surface and metal film to surface acoustic wave technology
Etch rate difference realize metal step increase perhaps reduction achieve the purpose that frequency reduce or improve, side of the present invention
Method is to be put forward for the first time both at home and abroad and use is in surface acoustic wave technology, is not made when preparing the metallic film on piezoelectric material
Use SiO2 film as buffer layer.
This method has the beneficial effect that:
The technology of the present invention successfully applied to part SMD encapsulation and CSP encapsulation etc. projects submit to user, be respectively increased and
Frequency range is reduced from 30khz to 20Mhz, reaches target call, while some projects, after using the technology, chip is surveyed
It tries qualification rate and is increased to 85% from 25%.
Detailed description of the invention
Fig. 1 is the frequency distribution schematic diagram before and after 1 frequency modulation of the embodiment of the present invention；
Fig. 2 is qualification rate schematic diagram before 2 frequency modulation of the embodiment of the present invention；
Fig. 3 is qualification rate schematic diagram after 2 frequency modulation of the embodiment of the present invention；
Fig. 4 is the schematic diagram of frequency reduction after 3 frequency modulation of the embodiment of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The present invention provides a kind of ion beam frequency modulation method based on surface acoustic wave, comprising:
S1, the distribution of sound table device frequency is acquired using probe, using switching software the wafer core for needing frequency modulation
Location information and frequency information the input ion-beam scanning etching of piece, the i.e. letter for the position that the needs of current wafer chip etch
Frequency information at breath and each position of current wafer chip；
S2, the frequency that chip needs to adjust is obtained, is calculated according to the base material, oxide on surface, metal thickness of chip
Scan the power of etching and the speed of scanning etching；
S3, in frequency-modulating process, argon ion is accelerated and bombards crystal column surface to come to the frequency modulation within the scope of whole wafer
Layer film is scanned etching, so that the filter frequencies of whole wafer range be made to reach target frequency value.
Further, bombardment to crystal column surface removal excess stock include at least lithium tantalate LT, aluminium titanates AT, Al,
SiO2, and it is right including at least lithium tantalate LT, aluminium titanates AT, aluminium Al, silica SiO2 institute in plasma beam scanning etching apparatus
The etch rate answered.
Further, described to accelerate and bombard crystal column surface to remove excess stock to include: in ion source by argon ion
In, inert gas argon gas is ionized and forms plasma, i.e. argon ion, draws acceleration system and generates and is reinforcing electric field extraction band just
Ion beam focusing and is accurately controlled ion beam by the ion of charge, electrostatic lenses and arrangement for deflecting by being located at ion cylinder
It being scanned in crystal column surface, collection of ions beam bombards the secondary electron and secondary ion that sample generates, focused ion beam hot spot is obtained,
Frequency modulation layer film is performed etching using focused ion beam hot spot.
Embodiment 1
The purpose of the present embodiment is to carry out series of processes implementation to the project 1 of sound table entry frequency accuracy high (40ppm), is carved
Erosion project 1, frequency modulation target: it is required that 2 reduction target frequency 100-500Khz；1 raising target frequency 100-500Khz.
1 project 1 of table implements cross-reference table
Second is carried out in order to further improve the dispersibility and target frequency of device frequency as shown in Figure 1 in the present embodiment
Secondary frequency modulation realizes target frequency and reduces frequency dispersion.
Embodiment 2
The present embodiment carries out series of processes implementation to the project 2 of frequency accuracy high (40ppm), etches project 2, frequency modulation mesh
Mark: frequency controls 670.72 ± 0.03Mhz of target, it is desirable that energy 2 (chip 1#, 2#) reduction target frequencies, 2 (chip 3#,
Target frequency 4#) can be improved, and frequency invariance is improved in piece.
2 project 2 of table implements cross-reference table
In the present embodiment, the process implementing of the project of frequency accuracy 40ppm is demonstrated, after frequency modulation, target frequency rises respectively
High and reduce, and the qualification rate in statistical chart 2,1#, 2# chip qualification rate 25% before frequency modulation, the qualification rate distribution after frequency modulation is such as
Fig. 3, the qualification rate in statistical chart 3, realization of goal and qualification rate is increased to 85%, darkened boxes indicate unqualified in figure, light color
Indicate qualified.
Embodiment 3
In the present embodiment, after implementing the method for the present invention to the frequency accuracy 35ppm project 3 of sound table entry, analysis is implemented
The test Electrical Analysis of front and back.In the present embodiment, Fig. 4 shows that frequency is reduced to by 275.58Mhz after implementing this method
275.47Mhz, the frequency of chip wafer is increased to 275.45Mhz by 275.35Mhz after implementing this method.
The innovative surface in sound table profession manufacture craft that is put forward for the first time of the invention does not have SiO2 film, is carved using ion beam
The method of erosion realizes that the increase of metal step or reduction reach frequency reduction or raised purpose, successfully solves to line width
In the production of the high-frequency narrow-band sound surface wave device technique of film thickness high sensitivity, using the equipment and most accurately of most significant end in the world
Technology controlling and process not can guarantee the problem that preceding working procedure produces the chip of frequency yet.And it promotes the use in low frequency and narrow bandwidth SAW device
The project of part and 2Ghz or more SAW high-frequency element high freuqency accuracy.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
A variety of variations, modification, replacement can be carried out to these embodiments without departing from the principles and spirit of the present invention by understanding
And modification, the scope of the present invention is defined by the appended.
Claims (3)
1. a kind of ion beam frequency modulation method based on surface acoustic wave characterized by comprising
S1, the distribution of sound table device frequency is acquired using probe, using switching software the chip wafer for needing frequency modulation
Location information and frequency information input ion-beam scanning etching；
S2, the frequency that chip needs to adjust is obtained, is calculated and is scanned according to the base material, oxide on surface, metal thickness of chip
The power of etching and the speed of scanning etching；
S3, in frequency-modulating process, argon ion is accelerated and bombard crystal column surface come it is thin to the frequency modulation layer within the scope of whole wafer
Film is scanned etching, so that the filter frequencies of whole wafer range be made to reach target frequency value.
2. a kind of ion beam frequency modulation method based on surface acoustic wave according to claim 1, which is characterized in that scanning etching
Object include at least lithium tantalate LT, aluminium titanates AT, aluminium Al, silica SiO2, and plasma beam scanning etching apparatus in extremely
Lithium tantalate LT, aluminium titanates AT, aluminium Al, etch rate corresponding to silica SiO2, plasma beam scanning etching are had recorded less
Equipment is according to the Object Selection then etching speed of scanning etching.
3. a kind of ion beam frequency modulation method based on surface acoustic wave according to claim 1, which is characterized in that described by argon
Ion acceleration and to bombard to crystal column surface to remove excess stock include: that in an ion source, inert gas argon gas is ionized and shape
At plasma, i.e. argon ion, draws acceleration equipment generation reinforcement electric field and draw positively charged ion, by being located at ion column
By ion beam focusing, and accurately, control ion beam scans the electrostatic lenses and arrangement for deflecting of body in crystal column surface, collection of ions beam
Secondary electron and secondary ion that sample generates are bombarded, focused ion beam hot spot is obtained, using focused ion beam hot spot to frequency modulation
Layer film performs etching.
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| CN201910461793.XA CN110190827A (en) | 2019-05-30 | 2019-05-30 | A kind of ion beam frequency modulation method based on surface acoustic wave |
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| CN201910461793.XA CN110190827A (en) | 2019-05-30 | 2019-05-30 | A kind of ion beam frequency modulation method based on surface acoustic wave |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113489468A (en) * | 2021-07-13 | 2021-10-08 | 赛莱克斯微系统科技（北京）有限公司 | Frequency modulation method of resonator |
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| CN1319949A (en) * | 2000-03-31 | 2001-10-31 | 株式会社村田制作所 | Frequency regulation method for electronic component |
| CN101950047A (en) * | 2010-08-20 | 2011-01-19 | 山东大学 | Method for preparing quasi three-dimensional photonic crystals on potassium titanyl oxygenic phosphate crystals |
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Effective date of registration: 20220531 Address after: No.23 Xiyong Avenue, Shapingba District, Chongqing 401332 Applicant after: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION CHONGQING ACOUSTIC-OPTIC-ELECTRONIC CO.,LTD. Address before: 400060 No. 14, Huayuan Road, Nan'an District, Chongqing Applicant before: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.26 Research Institute |
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