CN110190826B - Resonant thin film layer, resonator and filter - Google Patents
Resonant thin film layer, resonator and filter Download PDFInfo
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- CN110190826B CN110190826B CN201910470766.9A CN201910470766A CN110190826B CN 110190826 B CN110190826 B CN 110190826B CN 201910470766 A CN201910470766 A CN 201910470766A CN 110190826 B CN110190826 B CN 110190826B
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- 239000010409 thin film Substances 0.000 title claims abstract description 48
- 239000010408 film Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 140
- 238000010586 diagram Methods 0.000 description 11
- 238000010147 laser engraving Methods 0.000 description 6
- 238000010329 laser etching Methods 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H2009/02165—Tuning
- H03H2009/02173—Tuning of film bulk acoustic resonators [FBAR]
Abstract
The application provides a resonant thin film layer, a resonator and a filter, wherein the resonant thin film layer comprises a first electrode layer arranged on a first wafer; a piezoelectric layer disposed on the first electrode layer; a second electrode layer disposed on the piezoelectric layer; the adjustable layer is arranged on the second electrode layer, and the counterweight pattern is arranged on the second electrode layer on the adjustable layer and used for adjusting different weights of the counterweight pattern so as to adjust different working frequencies of the resonance thin film layer. This application has realized adjusting the counter weight pattern on resonance thin film layer as required, and then has different operating frequency for the resonance thin film layer that makes the difference.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a resonant thin film layer, a resonator and a filter.
Background
The basic principle of the film bulk acoustic resonator is that a resonance technology is adopted, electric energy is converted into sound waves through the inverse piezoelectric effect of a piezoelectric film to form resonance, the resonance technology can be used for manufacturing advanced components such as a film frequency shaping device, and the film bulk acoustic resonator sound wave device has the characteristics of small volume, low cost, high quality factor, strong power bearing capacity, high frequency (up to 1-10GHz), compatibility with an IC (integrated circuit) technology and the like. The functions of image elimination, parasitic filtering, channel selection and the like are realized in the wireless transceiver, so that the wireless transceiver is widely applied to the field of wireless communication.
Conventional film bulk acoustic resonator structures generally include an upper electrode layer, a lower electrode layer, and a piezoelectric layer sandwiched between the upper electrode layer and the lower electrode layer. However, the frequency of the resonator with such a structure is single, and people's requirements for the diversity of the working frequency of the resonator cannot be met.
Disclosure of Invention
An object of the embodiments of the present application is to provide a resonant thin film layer, a resonator, and a filter, which are used to adjust a weight pattern of the resonant thin film layer as required, so that different resonant thin film layers have different operating frequencies.
A first aspect of an embodiment of the present application provides a resonant thin film layer, including: a first electrode layer disposed on a first wafer; a piezoelectric layer disposed on the first electrode layer; a second electrode layer disposed on the piezoelectric layer; and the adjustable layer is arranged on the second electrode layer, and the counterweight pattern is implemented on the adjustable layer and is used for adjusting different weights of the counterweight pattern so as to adjust different working frequencies of the resonance thin film layer.
In one embodiment, the weight pattern does not extend through the adjustable layer.
In one embodiment, the thickness of the weight pattern is in a range of 20% to 80% of the thickness of the adjustable layer.
In one embodiment, the adjustable layer thickness ranges from 200A to 4000A.
In one embodiment, the thickness of the second electrode layer ranges from 1000A to 5000A.
A second aspect of embodiments of the present application provides a resonant thin film layer, including: a first electrode layer disposed on a first wafer; a piezoelectric layer disposed on the first electrode layer; a second electrode layer disposed on the piezoelectric layer; and the adjustable layer is arranged on the second electrode layer, and the counterweight pattern is implemented on the adjustable layer and the second electrode layer and is used for adjusting different weights of the counterweight pattern so as to adjust different working frequencies of the resonance thin film layer.
In one embodiment, the weight pattern penetrates through the adjustable layer and extends to the second electrode layer.
In one embodiment, the weight pattern extends to a thickness of the second electrode layer which is 20% to 80% of the thickness of the second electrode layer.
In one embodiment, the thickness of the second electrode layer ranges from 1000A to 5000A.
A third aspect of embodiments of the present application provides a resonator, including: the resonant thin film layer according to the first aspect of the embodiment or the second aspect of the embodiment, and the first cavity are disposed under the first electrode layer under the resonant thin film layer; the second cavity is arranged on the second electrode layer above the resonance thin film layer; the first electrode layer, the piezoelectric layer and the second electrode layer isolate the first cavity from the second cavity; the weight of the weight pattern of the resonant thin film layer in each of the resonators is different so that different ones of the resonators have different operating frequencies.
A fourth aspect of the embodiments of the present application provides a filter, including: a plurality of resonators as described in the third aspect of embodiments herein, wherein the filter comprises: at least one first resonator, a plurality of which are connected in series at the input and output of the filter; at least one second resonator, each of the second resonators being connected between a node and a common terminal of two of the first resonators; the weight of the weight pattern of each of the first resonator and the second resonator is different so that the filters having different frequencies due to the process have the same operating frequency after being adjusted for the weight pattern.
The application provides a resonance thin film layer, syntonizer and wave filter, through set up the counter weight pattern on the second electrode layer of resonance thin film layer, weight can be adjusted to the counter weight pattern, has realized adjusting the weight of the counter weight pattern of resonance thin film layer as required, makes different resonance thin film layers have different operating frequency. And then the resonator with the resonance film layer can adjust the working frequency, enrich the diversity of the resonator and further enrich the design mode of the filter.
Drawings
To more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments of the present application will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1A is a schematic diagram of a filter according to an embodiment of the present application;
fig. 1B is a schematic structural diagram of a resonator according to an embodiment of the present application;
fig. 2A is a schematic structural diagram of a resonator according to an embodiment of the present application;
fig. 2B is a schematic structural diagram of a resonator according to an embodiment of the present application;
FIG. 3 is a schematic structural diagram of a resonator according to an embodiment of the present application;
FIG. 4 is a schematic structural diagram of a resonator according to an embodiment of the present application;
FIG. 4A is an enlarged schematic view of a weight pattern according to an embodiment of the present application;
FIG. 4B is a schematic plan view of a weight pattern according to an embodiment of the present application;
FIG. 4C is an enlarged schematic view of another weight pattern according to an embodiment of the present application;
fig. 4D is a schematic plan view of a weight pattern according to an embodiment of the present application.
Reference numerals:
10-filter, 100-resonator, 110-resonant thin film layer, 111-first electrode layer, 112-piezoelectric layer, 113-second electrode layer, 114-adjustable layer, 115-counterweight pattern, 115 a-first recess region, 115 b-second recess region, 115 c-third recess region, 115 d-fourth recess region, 116-protective layer, 120-first cavity, 121-first wafer, 130-second cavity, 131-second wafer, 150-counterweight interface layer.
Detailed Description
The technical solutions in the embodiments of the present application will be described below with reference to the drawings in the embodiments of the present application. In the description of the present application, the terms "first," "second," and the like are used merely to distinguish one description from another, and are not to be construed as indicating or implying relative importance.
Referring to fig. 1A, which is a schematic diagram of a filter 10 according to an embodiment of the present application, the filter 10 of the present embodiment includes: and a plurality of first resonators connected in series to the input and output terminals of the filter 10, and the resonator Y1, the resonator Y2, and the resonator Y3 shown in fig. 1A are first resonators.
And a plurality of second resonators each connected between a node and a common terminal of the two first resonators. The resonator Y4 and the resonator Y5 shown in fig. 1A are a second resonator in which the resonator Y4 has one end connected to the node of the resonator Y1 and the resonator Y2 and the other end connected to the common end. Resonator Y5 has one end connected to the node of resonator Y2 and resonator Y3, and the other end connected to the common end.
As shown in fig. 1B, which is a schematic structural diagram of a resonator 100 according to an embodiment of the present application, the resonator includes: a resonant thin film layer 110, a first cavity 120, and a second cavity 130. A first cavity 120 is formed in the first wafer 121 and disposed below the resonant thin film layer 110. A second cavity 130 is formed in a second wafer 131 and disposed above the resonant thin film layer 110. The resonant thin film layer 110 is disposed between the first cavity 120 and the second cavity 130.
The resonant thin film layer 110 includes: a first electrode layer 111, a piezoelectric layer 112 and a second electrode layer 113. The first electrode layer 111 is disposed on the first wafer 121. The piezoelectric layer 112 is disposed on the first electrode layer 111. A second electrode layer 113 is disposed on the piezoelectric layer 112. A weight pattern 115 formed on the second electrode layer 113, the weight pattern 115 being integrally formed with the second electrode layer 113. In one embodiment, the first electrode layer 111 may be formed with a weight pattern 115 of any pattern by a laser engraving or etching process.
In the resonant thin film layer 110 of the embodiment, the weight of the weight pattern 115 can be adjusted by disposing the weight pattern 115 on the second electrode layer 113, so that the weight of the weight pattern 115 of the resonant thin film layer 110 can be adjusted as required, and different resonant thin film layers 110 have different operating frequencies. And thus the resonator 100 having the resonance thin film layer 110 can adjust an operating frequency.
In one embodiment, as shown in fig. 2A, the resonant film layer 110 may further include: the layer 114 may be adjusted. The adjustable layer 114 is disposed on the second electrode layer 113. In this embodiment, different weight patterns 115 can be formed by the adjustable layer 114 to adjust the operating frequency of the resonant thin film layer 110 by changing the weight ratio. In one embodiment, the weight pattern 115 of the adjustable layer 114 may be formed by etching, laser engraving, or the like.
In one embodiment, the thickness of the second electrode layer 113 may range from 2000A to 4000A.
In one embodiment, the density of the tunable layer 114 is greater than the density of the piezoelectric layer 112.
Fig. 2B is a schematic structural diagram of another resonator according to an embodiment of the present application. The resonant thin film layer 110 may further include: a protective layer 116 disposed over the weight pattern 115, the protective layer 116 being laid on the weight pattern 115 for protecting the weight pattern 115. In one embodiment, the material of the passivation layer 116 can be the same as the material of the piezoelectric layer 112 or other insulating material.
In an embodiment, the adjustable layer 114 may be formed on the second electrode layer 113 by forming a weight pattern 115 (as shown in fig. 2B) of a columnar structure with a mutual spacing by laser engraving or etching, and the thickness of the weight pattern 115 may be 20% to 80% of the thickness of the second electrode layer 113. The weight pattern 115 cannot penetrate the second electrode layer 113 to ensure that the resonance thin film layer 110 normally operates after being energized. In one embodiment, when the thickness of the weight pattern 115 is in the range of 40% to 60% of the thickness of the second electrode layer 113, the resonant thin film layer 110 has a better center frequency.
In an embodiment, as shown in fig. 3, which is a schematic structural diagram of another resonator 100 according to an embodiment of the present disclosure, a weight pattern 115 of the resonant thin film layer 110 may be formed on the tunable layer 114. The adjustable layer 114 may be formed by laser engraving or etching, etc. to form a registration pattern 115 (as shown in fig. 3) of mutually spaced recessed regions, but the recessed regions do not penetrate the adjustable layer 114, and the voids are filled after the recessed regions are covered by the protective layer 116.
In one embodiment, the thickness of the tunable layer 114 may range from 200A to 1000A.
In one embodiment, the thickness of the weight pattern 115 may be in a range of 20% to 80% of the thickness of the tunable layer 114. For example, when the thickness of the weight pattern 115 is in the range of 40% to 60% of the thickness of the tunable layer 114, the resonant thin film layer 110 has a better center frequency.
In the resonant thin film layer 110 of the embodiment, the adjustable layer 114 is disposed on the second electrode layer 113, and the weight pattern 115 is formed on the adjustable layer 114, so that the weight pattern 115 is formed without damaging the second electrode layer 113 because the thickness of the weight pattern 115 does not penetrate through the adjustable layer 114, and the adjustment of the operating frequency of the resonant thin film layer 110 is realized by adjusting the weight of the weight pattern 115 without passing through the second electrode layer 113.
In an embodiment, as shown in fig. 4, which is a schematic structural diagram of another resonator 100 according to an embodiment of the present application, the resonant thin film layer 110 may further include: penetrates the adjustable layer 114 and extends to the weight pattern 115 of the second electrode layer 113.
In one embodiment, different weight patterns 115 may be etched on the tunable layer 114 and the second electrode layer 113 by laser engraving or etching, in one embodiment, recessed regions with different depths may be etched according to actual requirements to achieve different weight adjustments, and after the recessed regions are covered by the protection layer 116, the voids are filled up.
For convenience of explanation of the structure of the weight pattern 115, fig. 4A is obtained by enlarging the partial weight interface layer 150 where the weight pattern 115 is located in fig. 4 and removing the protective layer 116.
As shown in fig. 4A, the weight pattern 115 may be a recessed region formed by laser etching and having different depths and different sizes, and the first recessed region 115a and the second recessed region 115b formed on the second electrode layer 113 and the adjustable layer 114 may be two forms of the weight pattern 115.
As shown in fig. 4B, a plan view of the first and second recessed regions 115a and 115B is illustrated. In the same resonator 100, the first recess region 115a may penetrate through the adjustable layer 114, and the second recess region 115b may not penetrate through the adjustable layer 114. The size and depth of the two may be different, and are determined according to actual needs, which is not limited in this embodiment.
In an embodiment, the weight pattern 115 may be recessed regions with the same size and different depths formed by laser engraving or etching, and for convenience of describing the structure of the weight pattern 115, the partial weight interface layer 150 where the weight pattern 115 is located in fig. 4 is enlarged, and the protection layer 116 is removed to obtain fig. 4C.
As shown in fig. 4C, a third recess region 115C and a fourth recess region 115d, which are two forms of the weight pattern 115, are formed on the second electrode layer 113 and the adjustable layer 114, respectively.
As shown in fig. 4D, a plan view of the third and fourth recessed regions 115c and 115D is illustrated. In the same resonator 100, the third recessed region 115c may penetrate through the adjustable layer 114 and extend to the second electrode layer 113, and does not penetrate through the second electrode layer 113, so as to ensure that the resonant thin film layer 110 normally operates after being powered on. Similarly, the fourth recess region 115d may also extend to the second electrode layer 113 but not through the second electrode layer 113, and the extending depth of the fourth recess region 115d in the second electrode layer 113 may be the same as or different from that of the third recess region 115 c. The size and the depth of the two planes can be the same, and the depth can be different, which is determined according to the actual requirement, and this embodiment does not limit this.
The above are merely preferred embodiments of the present application and are not intended to limit the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (11)
1. A resonant film layer, comprising:
a first electrode layer disposed on a first wafer;
a piezoelectric layer disposed on the first electrode layer;
a second electrode layer disposed on the piezoelectric layer;
an adjustable layer disposed on the second electrode layer, a weight pattern implemented on the adjustable layer, the weight pattern including a plurality of recessed regions of different sizes for adjusting different weights of the weight pattern to adjust different operating frequencies of the resonant thin film layer.
2. The resonant film layer of claim 1,
the weight pattern does not extend through the adjustable layer.
3. The resonant film layer of claim 2, wherein the weight pattern has a thickness in a range of 20% to 80% of the thickness of the adjustable layer.
4. The resonant film layer of claim 1,
the adjustable layer thickness ranges from 200A to 4000A.
5. The resonant film layer of claim 1, wherein the second electrode layer has a thickness in a range of 1000A to 5000A.
6. A resonant film layer, comprising:
a first electrode layer disposed on a first wafer;
a piezoelectric layer disposed on the first electrode layer;
a second electrode layer disposed on the piezoelectric layer;
an adjustable layer disposed on the second electrode layer, a weight pattern implemented on the adjustable layer and the second electrode layer, the weight pattern including a plurality of recessed regions of different sizes for adjusting different weights of the weight pattern to adjust different operating frequencies of the resonant thin film layer.
7. The resonant film layer of claim 6,
the weight pattern penetrates through the adjustable layer and extends to the second electrode layer.
8. The resonant film layer of claim 7, wherein the weight pattern extends to a thickness of the second electrode layer ranging from 20% to 80% of the thickness of the second electrode layer.
9. The resonant film layer of claim 6, wherein the second electrode layer has a thickness in a range of 1000A to 5000A.
10. A resonator, comprising: a resonant thin film layer as claimed in any one of claims 1 to 5 or claims 6 to 9, and
the first cavity is arranged below the first electrode layer below the resonance thin film layer;
the second cavity is arranged on the second electrode layer above the resonance film layer;
the first electrode layer, the piezoelectric layer and the second electrode layer isolate the first cavity from the second cavity;
the weight of the weight pattern of the resonant thin film layer in each of the resonators is different so that different ones of the resonators have different operating frequencies.
11. A filter, comprising: a plurality of resonators as claimed in claim 10, wherein the filter comprises:
at least one first resonator, a plurality of which are connected in series at the input and output of the filter;
at least one second resonator, each of the second resonators being connected between a node and a common terminal of two of the first resonators;
the weight of the weight pattern of each of the first resonator and the second resonator is different so that the filters having different frequencies due to the process have the same operating frequency after being adjusted for the weight pattern.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
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| CN201910470766.9A CN110190826B (en) | 2019-05-31 | 2019-05-31 | Resonant thin film layer, resonator and filter |
| PCT/CN2020/075501 WO2020238286A1 (en) | 2019-05-31 | 2020-02-17 | Resonant thin film layer, resonator and filter |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910470766.9A CN110190826B (en) | 2019-05-31 | 2019-05-31 | Resonant thin film layer, resonator and filter |
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| CN110190826B true CN110190826B (en) | 2020-10-02 |
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| CN110190826B (en) * | 2019-05-31 | 2020-10-02 | 厦门市三安集成电路有限公司 | Resonant thin film layer, resonator and filter |
| CN111010134B (en) * | 2019-10-26 | 2021-06-01 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator, frequency adjustment method for bulk acoustic wave resonator, filter, and electronic device |
| KR102609164B1 (en) * | 2021-01-25 | 2023-12-05 | 삼성전기주식회사 | Bulk acoustic resonator |
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| CN1595798A (en) * | 2003-09-09 | 2005-03-16 | 三星电子株式会社 | Thin film resonator, method for making thin film resonator and filter having thin film resonators |
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| JP3577170B2 (en) * | 1996-08-05 | 2004-10-13 | 株式会社村田製作所 | Piezoelectric resonator, method of manufacturing the same, and electronic component using the same |
| WO2010061479A1 (en) * | 2008-11-28 | 2010-06-03 | 富士通株式会社 | Elastic wave device and method for manufacturing the same |
| CN103338022B (en) * | 2013-07-22 | 2016-03-09 | 中国科学院半导体研究所 | The MEMS resonator of frequency-adjustable |
| CN103701425B (en) * | 2013-10-25 | 2017-05-03 | 诺思（天津）微系统有限公司 | Wave filter and manufacture method thereof |
| CN104242864B (en) * | 2014-08-28 | 2017-03-29 | 中国工程物理研究院电子工程研究所 | The FBAR and wave filter of function are trimmed with temperature-compensating and resonant frequency |
| CN107181472B (en) * | 2016-03-10 | 2020-11-03 | 中芯国际集成电路制造(上海)有限公司 | Film bulk acoustic resonator, semiconductor device and method of manufacturing the same |
| CN108173528A (en) * | 2018-02-01 | 2018-06-15 | 湖北宙讯科技有限公司 | Wave filter |
| CN110190826B (en) * | 2019-05-31 | 2020-10-02 | 厦门市三安集成电路有限公司 | Resonant thin film layer, resonator and filter |
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| CN1595798A (en) * | 2003-09-09 | 2005-03-16 | 三星电子株式会社 | Thin film resonator, method for making thin film resonator and filter having thin film resonators |
| CN102916674A (en) * | 2011-08-03 | 2013-02-06 | 太阳诱电株式会社 | Acoustic wave filter |
| CN107528565A (en) * | 2016-06-15 | 2017-12-29 | 三星电机株式会社 | Elastic wave filter device |
| CN107592091A (en) * | 2016-07-07 | 2018-01-16 | 三星电机株式会社 | Bulk accoustic wave filter device and its manufacture method |
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| WO2020238286A1 (en) | 2020-12-03 |
| CN110190826A (en) | 2019-08-30 |
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