CN110190170B - Backboard of micro light-emitting diode display and manufacturing method thereof - Google Patents
Backboard of micro light-emitting diode display and manufacturing method thereof Download PDFInfo
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- CN110190170B CN110190170B CN201910298171.XA CN201910298171A CN110190170B CN 110190170 B CN110190170 B CN 110190170B CN 201910298171 A CN201910298171 A CN 201910298171A CN 110190170 B CN110190170 B CN 110190170B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 238000000059 patterning Methods 0.000 claims abstract description 17
- 239000000853 adhesive Substances 0.000 claims abstract description 15
- 230000001070 adhesive effect Effects 0.000 claims abstract description 15
- 238000009412 basement excavation Methods 0.000 claims description 28
- 230000014759 maintenance of location Effects 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Illuminated Signs And Luminous Advertising (AREA)
Abstract
The invention provides a backboard of a micro light-emitting diode display and a manufacturing method thereof, comprising a driving part and a bonding area; the driving part is electrically connected with the micro light-emitting diode through the bonding region; the bonding region comprises a patterned region and an unpatterned region, the patterned region comprises a digging region and a reserved region, and the digging region and the reserved region are alternately arranged; the micro light-emitting diode chip is provided with a projection area in the patterning area, and the patterning area extends out of the projection area. According to the invention, the patterned area of the bonding area is designed into a structure in which the digging area and the reserved area are alternately arranged, the adhesive is arranged in the digging area to temporarily fix the micro light-emitting diode transferred to the bonding area, after all the micro light-emitting diodes are transferred, the adhesive is heated to volatilize, and the bonding reaction is carried out between the micro light-emitting diode chip and the patterned area to form permanent fixation.
Description
Technical Field
The invention relates to the technical field of manufacturing of MircoLED displays, in particular to a back plate of a micro light-emitting diode display and a manufacturing method thereof.
Background
With the development of display technology, micro light emitting diode display (mirco led for short) technology has appeared. The size of the LED adopted by the Mirco LED display is micron grade, and the Mirco LED display has the advantages of independent pixel control, independent light emitting control, high luminance, low power consumption, ultrahigh resolution, high chroma and the like. Bulk transfer, which is a key step in the Micro LED manufacturing process, transfers the mirco LED chips to the bonding regions corresponding to the driving part in batches using a transfer head, which requires temporary fixing of the transferred mirco LED chips after each transfer region is completed and before all transfers are completed. One possibility is to use an adhesive for temporary attachment and then to evaporate the adhesive while permanently attaching the chip to the bonding area by post-treatment. Fig. 1 is a cross-sectional view of a backplate of a conventional micro led display, and fig. 2 is a top view of the backplate of the conventional micro led display, as shown in fig. 1 and fig. 2, the backplate of the micro led display includes a driving portion 1, a bonding region 2 located on the driving portion 1, and a micro led chip 3 located on the bonding region 2 and electrically connected to the bonding region 2, wherein the bonding region 2 is a full-surface structure, and temporary fixation of the micro led chip 3 cannot be achieved.
Disclosure of Invention
The invention aims to provide a backboard of a micro light-emitting diode display and a manufacturing method thereof, which can realize temporary fixation of the micro light-emitting diode in the transfer process.
The invention provides a backboard of a micro light-emitting diode display, which comprises a driving part and a bonding area, wherein the driving part is arranged on the backboard; the driving part is electrically connected with the micro light-emitting diode transferred to the back plate through the bonding area; the bonding region comprises a patterned region and an unpatterned region, the patterned region comprises a digging region and a reserved region, and the digging region and the reserved region are alternately arranged; the micro light-emitting diode chip is provided with a projection area in the patterning area, and the patterning area extends out of the projection area.
Furthermore, the reserved area is a rectangular strip, and a plurality of rectangular strips are parallel to each other to form a rectangular strip array structure; the excavated area is a rectangular strip; a rectangular strip excavation area is distributed between every two adjacent rectangular strip retention areas; the long edge of the rectangular strip of the reserved area extends out of the projection area and is electrically connected with the non-graphical area, and the long edge of the rectangular strip of the excavated area extends out of the projection area.
Further, the width of the rectangular strip reserved area is 2um-20 um.
Further, the width of the rectangular strip excavation area is 2um-20 um.
Furthermore, the reserved area comprises a plurality of circular reserved areas and rectangular long reserved areas which penetrate through and are electrically connected with the circular reserved areas, and the circular reserved areas form a concentric circular array structure; the digging areas are annular digging areas and rectangular strip digging areas penetrating through the annular digging areas, the annular digging areas form a concentric circle array structure, and an annular digging area is distributed between every two adjacent annular reserved areas; the long edge of the rectangular strip reserved area extends out of the projection area and is electrically connected with the non-graphical area, and the long edge of the rectangular strip excavated area extends out of the projection area.
Furthermore, the width of the circular ring-shaped reserved area is 2um-20um, and the width of the circular ring-shaped excavated area is 2um-20 um.
Furthermore, the reserved area comprises a plurality of rectangular frame reserved areas and rectangular strip reserved areas which penetrate through and are electrically connected with the rectangular frame reserved areas, and the rectangular frame reserved areas are concentrically arranged to form a concentric rectangular array structure; the excavation region comprises a plurality of rectangular square frame excavation regions and a rectangular long strip excavation region penetrating through the rectangular square frame excavation regions, and a rectangular square frame excavation region is distributed between every two adjacent rectangular square frame reserved regions; the long edge of the rectangular strip reserved area extends out of the projection area and is electrically connected with the non-graphical area, and the long edge of the rectangular strip excavated area extends out of the projection area.
Further, the width of the rectangular frame reserved area is 2um-20um, and the width of the rectangular frame excavated area is 2um-20 um.
Further, the material of the reserved area is a conductive material.
The invention also provides a manufacturing method of the micro light-emitting diode backboard, which comprises the following steps:
s1: forming a driving portion and a bonding region on a glass substrate;
s2: patterning a part of the bonding region in the step S1 to form a patterned region, wherein the region not subjected to the patterning process is an unpatterned region; the patterning area comprises a digging area and a reserved area, and the digging area and the reserved area are alternately arranged.
According to the invention, the patterned area of the bonding area is designed into a structure in which the digging area and the reserved area are alternately arranged, the adhesive is arranged in the digging area to temporarily fix the micro light-emitting diode transferred to the bonding area, after all the micro light-emitting diodes are transferred, the adhesive is heated to volatilize, and the bonding reaction is carried out between the micro light-emitting diode chip and the patterned area to form permanent fixation.
Drawings
FIG. 1 is a cross-sectional view of a backplane of a prior art micro LED display;
FIG. 2 is a top view of a backplane of a conventional micro LED display;
FIG. 3 is a cross-sectional view of a back plate of a micro LED display according to an embodiment of the present invention;
FIG. 4 is a top view of a back plate of a micro light emitting diode display according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a patterned area structure of a backplane of a micro LED display according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a patterned area structure of a second embodiment of a backplane of a micro light-emitting diode display according to the present invention;
FIG. 7 is a cross-sectional view of a manufacturing process of a backplane embodiment of a micro light-emitting diode display according to the present invention;
FIG. 8 is a top view of a process for manufacturing a backplane of a micro LED display according to an embodiment of the present invention.
Detailed Description
The present invention is further illustrated by the following figures and specific examples, which are to be understood as illustrative only and not as limiting the scope of the invention, which is to be given the full breadth of the appended claims and any and all equivalent modifications thereof which may occur to those skilled in the art upon reading the present specification.
The invention provides a backboard of a micro light-emitting diode display, which comprises a driving part and a bonding area, wherein the driving part is arranged on the backboard; the driving part is electrically connected with the micro light-emitting diode transferred to the back plate through the bonding area; the bonding region comprises a patterned region and an unpatterned region, the patterned region comprises a digging region and a reserved region, and the digging region and the reserved region are alternately arranged; the micro light-emitting diode chip is provided with a projection area in the patterning area, and the patterning area extends out of the projection area.
Fig. 3 is a cross-sectional view of an embodiment of a back plate of a micro light emitting diode display, fig. 4 is a top view of the embodiment of the back plate of the micro light emitting diode display, fig. 5 is a schematic diagram of a patterned area structure of the embodiment of the back plate of the micro light emitting diode display, and the back plate of the micro light emitting diode display comprises: a drive portion 10 and a bonding region; the bonding area comprises a patterned area and an unpatterned area, the reserved area is a rectangular strip reserved area 21, and a plurality of rectangular strips are parallel to each other to form a rectangular strip array structure; the excavated area is a rectangular strip excavated area 22; a rectangular strip excavation area 22 is distributed between two adjacent rectangular strip retention areas 21; the area 24 enclosed by the dotted line in fig. 5 is a long side of a rectangular strip of a projection area reserved area of the micro light emitting diode chip 30 on the patterned area, which extends out of the projection area and is electrically connected with the unpatterned area, and a long side of a rectangular strip of the excavated area extends out of the projection area.
Wherein, the width of rectangular bar reservation region 21 is 2um-20um (preferably 5um), and the width of rectangular bar excavation region 22 is 2um-20um (preferably 3 um).
Fig. 6 is a schematic diagram of a bonding region structure in a second embodiment of a backplane of a micro light emitting diode display according to the present invention, where the bonding region includes a patterned region and an unpatterned region 40, and the second embodiment of the present invention is different from the first embodiment in that the patterned region structure is different, and as shown in fig. 6, the retention region includes a plurality of circular ring-shaped retention regions 41 and rectangular strip retention regions 43 penetrating the plurality of circular ring-shaped retention regions 41, the rectangular strip retention regions 43 are electrically connected to the plurality of circular ring-shaped retention regions 41, and the circular ring-shaped retention regions 41 form a concentric circle array structure; the excavation regions comprise circular annular excavation regions 42 and rectangular long excavation regions 45 penetrating through the circular annular excavation regions 42, the circular annular excavation regions 42 form a concentric circular array structure, and one circular annular excavation region 42 is distributed between two adjacent circular annular reserved regions 41; the area 44 enclosed by the dotted line in fig. 6 is a projection area of the micro light emitting diode 30 on the patterned area, the long side of the rectangular strip retention area 43 extends out of the projection area and is electrically connected with the non-patterned area, and the long side of the rectangular strip excavation area 45 extends out of the projection area. The width of the circular ring-shaped reserved area is 2um-20um, the width of the circular ring-shaped excavated area is 2um-20um, and the width of the circular ring-shaped reserved area and the width of the circular ring-shaped excavated area can be the same or different.
The reserved area can also be a plurality of rectangular frame reserved areas and a rectangular strip reserved area which penetrates through and is electrically connected with the rectangular frame reserved areas, and the rectangular frame reserved areas are concentrically arranged to form a concentric rectangular array structure; the excavation region comprises a plurality of rectangular square frame excavation regions and a rectangular long strip excavation region penetrating through the rectangular square frame excavation regions, and a rectangular square frame excavation region is distributed between every two adjacent rectangular square frame reserved regions; the long edge of the rectangular strip reserved area extends out of the projection area and is electrically connected with the non-graphical area, and the long edge of the rectangular strip excavated area extends out of the projection area. The width of the rectangular frame reserved area is 2um-20um, the width of the rectangular frame excavated area is 2um-20um, and the width of the rectangular frame reserved area and the width of the rectangular frame excavated area can be the same or different.
The material of the reserved area is conductive material such as copper or titanium.
The invention provides a method for manufacturing a backboard of a micro light-emitting diode display, which comprises the following steps:
s1: forming a driving portion and a bonding region on a glass substrate;
s2: patterning a part of the bonding region in the step S1 to form a patterned region, wherein the region not subjected to the patterning process is an unpatterned region; the patterning area comprises a digging area and a reserved area, and the digging area and the reserved area are alternately arranged;
s3: filling an adhesive in each excavated region;
s4: transferring the micro light-emitting diode chip to a bonding area, and fixing the micro light-emitting diode chip on the bonding area through an adhesive;
s5: in step S4, the adhesive is volatilized by a heating process, and a bonding reaction occurs between the micro light emitting diode chip and the patterned region to form a bonding force, so that the micro light emitting diode chip and the patterned region are fixedly connected.
Fig. 7 is a cross-sectional view of a manufacturing process of an embodiment of a backplane for a micro light emitting diode display according to the present invention, fig. 8 is a top view of a manufacturing process of an embodiment of a backplane for a micro light emitting diode display according to the present invention, the reserved area is a rectangular bar reserved area 21, the excavated area is a rectangular bar excavated area 22, and an adhesive 50 is filled in the rectangular bar excavated area 22.
According to the invention, the patterned area of the bonding area is designed into a structure in which the digging area and the reserved area are alternately arranged, the adhesive is arranged in the digging area to temporarily fix the micro light-emitting diode transferred to the bonding area, after all the micro light-emitting diodes are transferred, the adhesive is heated to volatilize, and the bonding reaction is carried out between the micro light-emitting diode chip and the patterned area to form permanent fixation.
Claims (10)
1. A manufacturing method of a backboard of a micro light-emitting diode display is characterized by comprising the following steps:
s1: forming a driving portion and a bonding region on a glass substrate;
s2: patterning a part of the bonding region in the step S1 to form a patterned region, wherein the region not subjected to the patterning process is an unpatterned region; the patterning area comprises a digging area and a reserved area, and the digging area and the reserved area are alternately arranged;
s3: filling an adhesive in each excavated region;
s4: transferring the micro light-emitting diode chip to a bonding area, and fixing the micro light-emitting diode chip on the bonding area through an adhesive;
s5: in step S4, the adhesive is volatilized by a heating process, and a bonding reaction occurs between the micro light emitting diode chip and the patterned region to form a bonding force, so that the micro light emitting diode chip and the patterned region are fixedly connected.
2. A back plate of a micro light emitting diode display manufactured by the method for manufacturing a back plate of a micro light emitting diode display according to claim 1, characterized in that: comprises a driving part and a bonding area; the driving part is electrically connected with the micro light-emitting diode transferred to the back plate through the bonding area; the bonding region comprises a patterned region and an unpatterned region, the patterned region comprises a digging region and a reserved region, and the digging region and the reserved region are alternately arranged; the micro light-emitting diode chip is provided with a projection area in the patterning area, and the patterning area extends out of the projection area.
3. The backplane of the micro light-emitting diode display according to claim 2, wherein: the reserved area is a rectangular strip, and a plurality of rectangular strips are parallel to each other to form a rectangular strip array structure; the excavated area is a rectangular strip; a rectangular strip excavation area is distributed between every two adjacent rectangular strip retention areas; the long edge of the rectangular strip of the reserved area extends out of the projection area and is electrically connected with the non-graphical area, and the long edge of the rectangular strip of the excavated area extends out of the projection area.
4. The backplane of the micro light-emitting diode display of claim 3, wherein: the width of the rectangular reserved area is 2um-20 um.
5. The backplane of the micro light-emitting diode display of claim 3, wherein: the width of rectangular excavation region is 2um-20 um.
6. The backplane of the micro light-emitting diode display according to claim 2, wherein: the retention regions comprise a plurality of circular ring-shaped retention regions and rectangular strip retention regions which penetrate through and are electrically connected with the circular ring-shaped retention regions, and the circular ring-shaped retention regions form a concentric circle array structure; the digging areas are annular digging areas and rectangular strip digging areas penetrating through the annular digging areas, the annular digging areas form a concentric circle array structure, and an annular digging area is distributed between every two adjacent annular reserved areas; the long edge of the rectangular strip reserved area extends out of the projection area and is electrically connected with the non-graphical area, and the long edge of the rectangular strip excavated area extends out of the projection area.
7. The backplane of the micro light-emitting diode display of claim 6, wherein: the width of the circular ring-shaped reserved area is 2um-20um, and the width of the circular ring-shaped digging area is 2um-20 um.
8. The backplane of the micro light-emitting diode display according to claim 2, wherein: the reserved area comprises a plurality of rectangular frame reserved areas and rectangular strip reserved areas which penetrate through the rectangular frame reserved areas and are electrically connected with the rectangular frame reserved areas, and the rectangular frame reserved areas are concentrically arranged to form a concentric rectangular array structure; the excavation region comprises a plurality of rectangular square frame excavation regions and a rectangular long strip excavation region penetrating through the rectangular square frame excavation regions, and a rectangular square frame excavation region is distributed between every two adjacent rectangular square frame reserved regions; the long edge of the rectangular strip reserved area extends out of the projection area and is electrically connected with the non-graphical area, and the long edge of the rectangular strip excavated area extends out of the projection area.
9. The backplane for micro light-emitting diode displays according to claim 8, wherein: the width of the rectangular frame reserved area is 2um-20um, and the width of the rectangular frame excavated area is 2um-20 um.
10. The backplane of the micro light-emitting diode display according to claim 2, wherein: the material of the reserved area is conductive material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910298171.XA CN110190170B (en) | 2019-04-15 | 2019-04-15 | Backboard of micro light-emitting diode display and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910298171.XA CN110190170B (en) | 2019-04-15 | 2019-04-15 | Backboard of micro light-emitting diode display and manufacturing method thereof |
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| Publication Number | Publication Date |
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| CN110190170A CN110190170A (en) | 2019-08-30 |
| CN110190170B true CN110190170B (en) | 2020-09-04 |
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| CN111613714A (en) * | 2020-05-25 | 2020-09-01 | 深圳市华星光电半导体显示技术有限公司 | Micro light-emitting diode and manufacturing method thereof |
| TWI729846B (en) | 2020-06-10 | 2021-06-01 | 友達光電股份有限公司 | Light-emitting device |
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| US7297572B2 (en) * | 2001-09-07 | 2007-11-20 | Hynix Semiconductor, Inc. | Fabrication method for electronic system modules |
| JP2016167544A (en) * | 2015-03-10 | 2016-09-15 | ソニー株式会社 | Electronic component, electronic component mounting board and mounting method of electronic component |
| TWI735645B (en) * | 2017-09-06 | 2021-08-11 | 優顯科技股份有限公司 | Method for batch transfer of micro-semiconductor structure and target substrate with micro-semiconductor structure |
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Effective date of registration: 20200827 Address after: No.7 Tianyou Road, Qixia District, Nanjing City, Jiangsu Province Patentee after: NANJING CEC PANDA LCD TECHNOLOGY Co.,Ltd. Address before: Nanjing Crystal Valley Road in Qixia District of Nanjing City Tianyou 210033 Jiangsu province No. 7 Co-patentee before: NANJING CEC PANDA LCD TECHNOLOGY Co.,Ltd. Patentee before: NANJING CEC PANDA FPD TECHNOLOGY Co.,Ltd. Co-patentee before: NANJING HUADONG ELECTRONICS INFORMATION & TECHNOLOGY Co.,Ltd. |
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Granted publication date: 20200904 |