CN110190095B - Display panel and preparation method thereof - Google Patents

Display panel and preparation method thereof Download PDF

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Publication number
CN110190095B
CN110190095B CN201910438866.3A CN201910438866A CN110190095B CN 110190095 B CN110190095 B CN 110190095B CN 201910438866 A CN201910438866 A CN 201910438866A CN 110190095 B CN110190095 B CN 110190095B
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film layer
layer
siox film
display panel
siox
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CN110190095A (en
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林碧芬
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to PCT/CN2019/100138 priority patent/WO2020237834A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/88—Dummy elements, i.e. elements having non-functional features

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention provides a display panel, which comprises a TFT array substrate, and a passivation layer and an organic flat layer which are arranged on the TFT array substrate. The organic flat layer is provided with a SiOx film layer, a SiNx film layer and an OLED device layer, wherein the SiOx film layer comprises a first part of SiOx film layer which is continuously arranged and a second part of SiOx film layer which is discontinuously arranged, the surface of the second part of SiOx film layer is in a velvet shape, and the second part of SiOx film layer and the corresponding part of the SiNx film layer arranged on the second part of SiOx film layer form a photonic crystal structure. The invention provides a display panel, which effectively improves the light-emitting rate of an OLED device arranged in the display panel by arranging a photonic crystal structure at a light-emitting area of the display panel.

Description

Display panel and preparation method thereof
Technical Field
The invention relates to the technical field of flat panel display, in particular to a display panel and a preparation method thereof.
Background
It is known that with the development of flat panel display technology, OLED display technology is becoming more and more accepted as the next generation display technology to replace liquid crystal display technology.
Although the OLED display technology has advantages of self-luminescence, wide viewing angle, almost infinite contrast, low power consumption, and very high response speed, it also has certain disadvantages, and thus, it needs to completely replace the liquid crystal display technology, and some technical problems need to be solved. For example, the light extraction rate of the OLED device is one of them.
The light output of an OLED device is a ratio of self-luminescence generated inside the OLED device to be emitted to the outside. Obviously, if the light-emitting efficiency of the OLED device is low, most of the OLED self-luminescence is lost inside the device and cannot be emitted outside the device, which will certainly greatly affect the efficiency. If the light-emitting efficiency of the OLED cannot be greatly improved, the subsequent large-scale application of the OLED will be seriously affected.
In view of the above, a targeted "light extraction" technology is proposed in the industry to specially develop a technical solution for improving the light extraction rate of the OLED. One proposed solution to improve the light extraction efficiency of an OLED device is to reduce the waveguide effect of the OLED device, and correspondingly to reduce the thickness of a medium, such as the organic layer of the OLED or the ITO, but this method cannot be fully implemented in practical operation.
Further, there have been some studies in the industry that the introduction of photonic crystals can release photons confined in the ITO/organic layer waveguide effect, but specific embodiments are still under constant search.
Therefore, there is a need to develop a new display panel and a method for manufacturing the same to overcome the drawbacks of the prior art.
Disclosure of Invention
One aspect of the present invention is to provide a display panel, which effectively increases the light extraction rate of an OLED device disposed therein by disposing a photonic crystal structure at a light emitting region thereof.
The technical scheme adopted by the invention is as follows:
a display panel includes a TFT array substrate, and a passivation layer and an organic planarization layer disposed thereon. The organic flat layer is provided with a SiOx film layer, a SiNx film layer and an OLED device layer, wherein the SiOx film layer comprises a first part of SiOx film layer which is continuously arranged and a second part of SiOx film layer which is discontinuously arranged, the surface of the second part of SiOx film layer is in a velvet shape, and the second part of SiOx film layer and the corresponding part of the SiNx film layer arranged on the second part of SiOx film layer form a photonic crystal structure.
Further, in various embodiments, the second SiOx film layer is disposed at a position corresponding to a position of a light emitting area of the OLED device layer.
Further, in various embodiments, the thickness of the first SiOx film layer is 800 to 1200 angstroms.
Further, in various embodiments, the thickness of the SiNx film layer is 800-1200 angstroms.
Further, another aspect of the present invention is to provide a method for manufacturing the display panel, including the steps of:
step S1, providing a TFT array substrate, and forming a passivation layer and an organic flat layer thereon;
step S2, forming the SiOx film layer on the organic planarization layer, and patterning the SiOx film layer by using a MASK (MASK), so that the SiOx film layer forms the first portion of the SiOx film layer and the blank region portion which are continuously disposed;
step S3, bombarding the SiOx film layer with Plasma (Plasma), so that a part of SiOx material in the first part of SiOx film layer is transferred to the blank region to form a second part of SiOx film layer which is discontinuously disposed, and etching the organic planarization layer, wherein the surface of the second part of SiOx film layer is formed with the velvet surface morphology after etching;
step S4, forming the SiNx film layer on the SiOx film layer; and
and step S5, forming an OLED device layer on the SiNx film layer.
Further, in a different embodiment, in the step S2, the position of the blank area portion after the SiOx film layer is patterned corresponds to the position of the light emitting area of the OLED device layer.
Further, in various embodiments, in the step S3, the Plasma used therein includes Ar Plasma (Ar Plasma).
Further, in a different embodiment, in the step S3, when the organic planarization layer is etched, the discontinuously disposed second partial SiOx film layer is used as a hard mask for etching.
Further, in a different embodiment, in the step S3, the etching gas used in etching the organic planarization layer includes O2 。
Further, in a different embodiment, in the step S4, the SiNx film layer is formed by a CVD film forming process.
Further, in a different embodiment, in the step S4, the mask used for forming the SiNx film layer is the mask used for forming the passivation layer in the step S1. That is, both are formed by using the same mask, so that the number of masks used in the manufacturing process according to the present invention is reduced, the utilization rate of the masks is improved, and the production cost of the manufacturing method according to the present invention is reduced to some extent.
Further, in a different embodiment, in the step S5, the OLED device layer includes a pixel defining layer (PDL layer), wherein a mask used in forming the pixel defining layer is a mask used in patterning the SiOx film layer in the step S2. That is, the mask used in the step S2 for patterning the SiOx film layer is further used to form a pixel defining layer in the OLED device layer, so that the number of masks used in the manufacturing process according to the present invention is reduced, the mask utilization rate is also increased, and the manufacturing cost of the manufacturing method according to the present invention is reduced to some extent.
Further, in a different embodiment, in the step S5, the light emitting component included in the OLED device layer is formed by evaporation.
Compared with the prior art, the invention has the beneficial effects that: the invention relates to a display panel and a preparation method thereof, wherein the display panel utilizes SiOXVelvet surface appearance and SiN on film surfaceXThe film layer forms a photonic crystal structure at the position of the corresponding light emitting area, so that the light emitting rate of the OLED device arranged in the film layer is effectively improved.
Further, the present invention relates to the production method, wherein the SiO is producedXThe mask with the velvet-shaped object morphology on the surface of the film layer is a mask for subsequently preparing the pixel defining layer in the functional layer of the OLED device, and a special manufacturing mask is not required to be newly added, so that the preparation cost of the display panel related to the invention is reduced to a certain extent.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a display panel manufacturing method according to an embodiment of the present invention, after step S1 is completed;
fig. 2 is a schematic structural diagram of the display panel manufacturing method shown in fig. 1 after step S2 is completed;
fig. 3 is a schematic structural diagram of the display panel manufacturing method shown in fig. 1 after step S3 is completed;
fig. 4 is a schematic structural diagram of the display panel manufacturing method shown in fig. 1 after step S4 is completed;
fig. 5 is a schematic structural diagram of the display panel manufacturing method shown in fig. 1 after step S5 is completed.
Detailed Description
The following describes a display panel and a method for manufacturing the display panel in further detail with reference to the accompanying drawings and examples.
Wherein, since the present invention relates to a display panel and a method for fabricating the same, the structure of the display panel to which the present invention relates will be described in detail below mainly in the fabrication method in order to avoid unnecessary repetition of the description.
One embodiment of the present invention provides a method of manufacturing a display panel, including the following steps.
Step S1, providing a TFT array substrate 10, and forming a passivation layer (PV)20, an organic planarization layer 30, and contact vias 12 for subsequent anode electrical connection thereon; the completed structural diagram is shown in fig. 1.
The TFT devices disposed on the TFT array substrate 10 may be, but not limited to, a-si, IGZO, LTPS, and the like, and may be determined as needed.
Step S2, forming a SiOx film layer of about 1000 angstroms on the organic planarization layer 30 by using a CVD film forming process, and then patterning the SiOx film layer by using a MASK (MASK) used for subsequently preparing a PDL layer in the OLED device layer, so that the SiOx film layer forms a first portion SiOx film layer 41 and a blank region portion 42 which are continuously disposed; the completed structural diagram is shown in fig. 2.
Step S3, bombarding the first portion of the SiOx film 41 with Ar plasma, so that a portion of the SiOx material in the first portion of the SiOx film 41 is transferred to the empty region 42 to form the discontinuously disposed second portionsTwo portions of SiOx film 43; then using O as a hard mask by using the discontinuously arranged second partial SiOx film layer 432Etching the organic flat layer 30, wherein the second SiOx film layer 43 is etched to form the velvet surface morphology on the surface; the completed structural diagram is shown in fig. 3.
Step S4, forming the SiNx film layer 50 on the SiOx film layer, which is a SiNx film layer with a film thickness of about 1000 angstroms formed by using a CVD film forming process, patterning the SiNx film layer 50 by using the mask used in the formation of the passivation layer 20 used in the step 1, and etching the anode contact hole 52 by using an etching process, wherein the completed structural diagram is shown in fig. 4.
Step S5, preparing the OLED device layer; specifically, an anode 60 and a PDL layer 70 are prepared on the SiNx film layer 50, and finally, an OLED light emitting module is manufactured by using an evaporation process, wherein a structural diagram after completion is shown in fig. 5. Wherein the second SiOx film layer 43 is located at a position corresponding to a light emitting region of the OLED light emitting assembly due to the velvet surface morphology and SiN on the surface of the second SiOx film layer 43XThe photonic crystal structure manufactured by the film layer can effectively improve the light-emitting rate of the OLED light-emitting component.
Further, the present invention relates to a method for manufacturing said display panel, wherein said SiO is madeXThe mask with the velvet-shaped object morphology on the surface of the film layer is a mask for subsequently preparing the pixel defining layer in the functional layer of the OLED device, and a special manufacturing mask is not required to be newly added, so that the preparation cost of the display panel related to the invention is reduced to a certain extent.
The technical scope of the present invention is not limited to the contents described in the above description, and those skilled in the art can make various changes and modifications to the above-described embodiments without departing from the technical spirit of the present invention, and these changes and modifications should fall within the scope of the present invention.

Claims (5)

1. A method for manufacturing a display panel; it is characterized by comprising the following steps:
step S1, providing a TFT array substrate, and forming a passivation layer and an organic flat layer thereon;
step S2, forming a SiOx film layer on the organic planarization layer, and patterning the SiOx film layer with a mask, so that the SiOx film layer forms a first portion of the SiOx film layer and a blank region portion that are continuously disposed;
step S3, bombarding the first SiOx film layer with plasma to transfer a part of SiOx material in the first SiOx film layer to the blank region to form a second discontinuous SiOx film layer, and etching the organic planarization layer, wherein the second SiOx film layer has a velvet surface after being etched;
step S4, forming a SiNx film layer on the SiOx film layer; and
step S5, forming an OLED device layer on the SiNx film layer, where the position of the blank area portion of the SiOx film layer after patterning corresponds to the position of the light emitting area of the OLED device layer.
2. A method for producing the display panel according to claim 1; in step S3, when the organic planarization layer is etched, the discontinuously disposed second SiOx film layer is used as a hard mask for etching.
3. A method for producing the display panel according to claim 1; wherein, in the step S3, the plasma used in the step comprises Ar plasma, wherein O is used for etching the organic flat layer2And etching the gas.
4. A method for producing the display panel according to claim 1; in the step S4, the mask used for forming the SiNx film layer is the mask used for forming the passivation layer in the step S1.
5. A method for producing the display panel according to claim 1; wherein, in the step S5, the OLED device layer includes a pixel defining layer, and the mask used in forming the pixel defining layer is the mask used in patterning the SiOx film layer in the step S2.
CN201910438866.3A 2019-05-24 2019-05-24 Display panel and preparation method thereof Active CN110190095B (en)

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CN201910438866.3A CN110190095B (en) 2019-05-24 2019-05-24 Display panel and preparation method thereof
PCT/CN2019/100138 WO2020237834A1 (en) 2019-05-24 2019-08-12 Display panel and preparation method thereof

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Application Number Priority Date Filing Date Title
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KR20120053318A (en) * 2010-11-17 2012-05-25 한국기계연구원 Organic light emitting device and manufacturing method thereof
CN104201188B (en) * 2014-08-22 2017-07-25 京东方科技集团股份有限公司 OLED pixel unit and preparation method thereof, display panel and display device
CN104409646A (en) * 2014-11-13 2015-03-11 合肥鑫晟光电科技有限公司 Lighting device and preparation method and display device

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