CN110190044B - Application of cobalt-iron alloy in magnetic capacitor, magnetic capacitor unit, magnetic capacitor device and preparation method thereof - Google Patents
Application of cobalt-iron alloy in magnetic capacitor, magnetic capacitor unit, magnetic capacitor device and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
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- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The invention discloses an application of a cobalt-iron alloy in a magnetic capacitor, wherein the application refers to that the cobalt-iron alloy is taken as a target material to form a multi-layer nano-scale magnetic film through magnetron sputtering coating and is taken as a magnetic conductive layer between two electrodes of the magnetic capacitor; in the cobalt-iron alloy, the atomic ratio of cobalt to iron is 6.5-7.2: 3.5-2.8. The invention also discloses a magnetic capacitor unit and a magnetic capacitor device. The invention takes the atomic ratio of 6.5-7.2: 3.5-2.8 of cobalt-iron alloy is used as a target material, and a magnetron sputtering coating technology is combined, so that the prepared multilayer nano-scale film can keep good magnetism once magnetized and can also keep good magnetism at high temperature, and the multilayer nano-scale film can be used in a semiconductor magnetic energy storage capacitor, can store a large amount of electric energy once activated, and can be used for developing a passive magnetic energy super capacitor without reciprocating charging.
Description
The invention claims a cobalt-iron alloy target, a magnetic conductive layer, a magnetic capacitor unit, a magnetic energy chip and a preparation method thereof, the application date is 2019, 03, month and 11, and the application number is 2019101791101, and the application of the cobalt-iron alloy in a magnetic capacitor, the magnetic capacitor unit, a magnetic capacitor device and the preparation method thereof are priority.
Technical Field
The invention belongs to the technical field of capacitors, and relates to an application of a cobalt-iron alloy in a magnetic capacitor, a magnetic capacitor unit, a magnetic capacitor device and a preparation method thereof.
Background
In modern society, energy storage components are widely available, such as capacitors in circuits and battery-like components for portable devices, however, existing energy storage components have some problems, such as: the capacitor element will reduce the overall performance due to the leakage current, while the battery will reduce the overall performance due to the memory effect of partial charge/discharge.
Giant magnetic effect (GMR) is a quantum physical effect that can be observed in structures having thin magnetic or thin non-magnetic regions. The giant magnetoresistance effect shows a significant change in resistance in response to an applied electric field from a zero-field high-impedance state to a high-field low-impedance state.
The chinese patent application No. 200710151597.X, entitled electrical energy storage device and method, discloses a device for storing electrical energy by using giant magnetic effect, the electrical energy storage device needs to be coupled with a power supply in the process of storing electrical energy, the charging process is complicated, because if a 3000mAh mobile phone is taken as an example according to the charging concept, the energy is converted into 3000mAh × 3.75.75V-11.25 Wh, the actual service time is less than 10 hours, and the service time of the mobile phone is up to 15 hours every day in the general white collar, therefore, the mobile phone must be charged every day, or a spare energy battery of a charger is carried, which is very inconvenient.
In view of this, in 2017, the applicant disclosed a method for storing electric energy by a magnetic energy chip (patent application No. 2017208864449.1), in which a magnetic capacitor is activated by an activation device, magnetic poles in magnetic films of two magnetic regions move under the excitation of a dc electric field to form an electric field in the magnetic capacitor, and the main energy stored in the magnetic energy chip is derived from the magnetic-electric conversion inside the magnetic capacitor, but not from an external energy source, and the activation process can be completed in a short time, and the energy that can be output by the magnetic capacitor after the activation is much larger than the input energy of the activation device. The scheme can solve the charging problem of the electric energy storage device and is not suitable for batch production. However, the scheme is based on a plurality of semiconductor magnetic capacitors connected in series or in parallel, the effect of the scheme is directly influenced by the magnitude of the giant magnetic factor (GMC) of the semiconductor magnetic capacitors, and the GMC has a better effect when reaching the power of 11 of 10. However, the current semiconductor magnetic capacitor is limited to the electrode material, the magnetic thin film material and the capacitor structure, and the GMC is usually 4 to 5 th power of 10, which is difficult to meet the requirements. In order to realize the popularization and the commercial use of the scheme, the development of a magnetic capacitor with high applicable GMC is urgently needed.
GMC of semiconductor magnetic capacitors often depends on magnetic thin film materials, so it is crucial to explore suitable magnetic thin film materials. Cobalt is one of the few metallic materials that can retain good magnetic properties once magnetized, and has a curie point (temperature at which magnetism is lost) as high as 1150 ℃. The coercive force of a magnetic steel containing about 60% of cobalt is improved by 2.5 times or more as compared with that of a general magnetic steel. Under the vibration of external force, the common magnetic steel loses almost 1/3% of magnetism, while the cobalt steel only loses 2% -3.5% of magnetism. The advantage of cobalt in the high-performance magnetic material is obviously higher than that of ferrite magnetic material and graphene, so that the cobalt material is expected to be applied in a passive semiconductor magnetic capacitor to realize the popularization and application of the scheme. However, at present, only the U.S. military is in the research of passive semiconductor magnetic capacitors, and there are still many technical problems in practical application, there is no report in the prior art that cobalt materials including various alloy materials are used to make magnetic thin film materials in semiconductor magnetic capacitors, and in fact, the applicant has made numerous attempts to implement the above scheme by using cobalt materials to make magnetic thin film materials, but the capacitance of capacitors is often not detected when capacitance detection is performed, and there are almost no techniques and experiences available for reference regarding passive semiconductor magnetic capacitors in the prior art.
Disclosure of Invention
Aiming at the problem that no cobalt material is adopted to prepare a magnetic thin film material in a semiconductor magnetic capacitor in the prior art, the invention provides the application of the cobalt-iron alloy in the magnetic capacitor, which is characterized in that the application refers to forming a multi-layer nanoscale magnetic film by taking the cobalt-iron alloy as a target material through magnetron sputtering coating, and the multi-layer nanoscale magnetic film is used as a magnetic conductive layer between two electrodes of the magnetic capacitor; in the cobalt-iron alloy, the atomic ratio of cobalt to iron is 6.5-7.2: 3.5-2.8.
Preferably, in the cobalt-iron alloy, the atomic ratio of cobalt to iron is 7: 3.
Preferably, the purity of the cobalt-iron alloy is more than or equal to 95%.
The multilayer nanoscale magnetic film formed by the cobalt-iron alloy and the magnetron sputtering coating technology has an exceptionally excellent giant magnetic effect, can keep good magnetism once magnetized, can effectively exert the excellent magnetic property of a cobalt-iron material, is further applied to a magnetic capacitor, can prepare a 9-12 th power super semiconductor magnetic capacitor with a giant magnetic factor of 10, can store a large amount of electric energy once activated, lays a foundation for developing a passive magnetic energy super capacitor without reciprocating charging, can be used as a substitute of all super capacitors made of carbon materials, metal oxide materials, conductive polymer materials and composite materials at present, and is a new technical revolution for guiding a field energy storage material in the future.
A second object of the present invention is to provide a magnetic capacitor unit, which is characterized by comprising, in order from top to bottom: the multilayer magnetic conductive film comprises a plurality of cobalt-iron deposition films, wherein the top electrode layer, the magnetic conductive layer, the insulating layer, the magnetic conductive layer and the bottom electrode layer are arranged in sequence; in the cobalt-iron deposition film, the atomic ratio of cobalt to iron is 6.5-7.2: 3.5-2.8, preferably 7: 3.
Preferably, the cobalt-iron deposition film can be formed by taking cobalt-iron alloy as a target material and performing magnetron sputtering coating. When magnetron sputtering coating is carried out, a cobalt-iron alloy target material with the atomic ratio of cobalt to iron of 6.5-7.2: 3.5-2.8, preferably 7:3 is adopted.
In the materials of each layer of the magnetic capacitor unit, particularly the magnetic conductive layer, the thickness of each magnetic film is of a nano structure, and the accurate control of the thickness of each layer in the material deposition process is particularly critical in order to ensure the uniformity and the yield of products.
Preferably, the thickness of the cobalt-iron deposition film is 5-25 nm.
Preferably, the top electrode layer and the bottom electrode layer are formed by alternately laminating a plurality of layers of nanometer Ru deposition films and Ta deposition films; the top electrode layer and the bottom electrode layer are symmetrical and have opposite magnetic poles.
Ru and Ta are key materials for manufacturing a capacitor, Ru is often used as an anode material of the capacitor, and Ta is often used as a cathode material, but the scheme that the Ru and the Ta are alternately laminated is not searched in the prior art. The invention creatively adopts the mode of alternately coating Ru and Ta as the electrode and combines with the cobalt-iron magnetic thin film material to successfully prepare the passive semiconductor magnetic capacitor, and the structural characteristics of the alternately coating of the electrode effectively improve the storage efficiency of the semiconductor magnetic capacitor and effectively prolong the service life of the electrode.
Preferably, the number of deposited film layers of the top electrode layer and the bottom electrode layer is an even number of layers of 6-12, and more preferably 8.
Preferably, the thickness of the Ru deposition film is 5-30 nm, preferably 10-20 nm, and more preferably 15 nm.
Preferably, the thickness of the Ta deposited film is 2 to 10nm, preferably 4 to 6nm, and more preferably 5 nm.
Preferably, the insulating layer is silicon oxide or magnesium oxide.
Preferably, the thickness of the insulating layer is 30 to 70nm, preferably 40 to 60nm, and more preferably 50 nm.
In the magnetic capacitor cell of some preferred embodiments of the present invention, the layers are composed and have the following thicknesses:
further preferably, the composition and thickness of each layer are as follows:
preferably, the magnetic capacitor unit has a length of 1.0 to 2.0 μm and a width of 0.5 to 1.0 μm. Further preferably, the dimension is 1.0 to 1.6 μm in length and 0.5 to 0.8 μm in width. A further preferred size is 1.6 μm by 0.55 μm.
In some embodiments of the present invention, the multi-layer nanoscale magnetic film further comprises a number of TaO deposited films.
Preferably, the TaO deposition film may be deposited by magnetron sputtering coating using TaO as a target.
In some embodiments of the present invention, the multilayer nanoscale magnetic film further comprises a number of CoFeB deposited films.
Preferably, the CoFeB deposited film can be deposited by magnetron sputtering coating using CoFeB as a target.
A third object of the present invention is to provide another magnetic capacitor unit, which is characterized by comprising, in order from top to bottom: the top electrode layer/magnetic conductive layer/insulating layer/magnetic conductive layer/bottom electrode layer, the magnetic conductive layer comprises multilayer nanometer magnetic film, multilayer nanometer magnetic film includes a plurality of CoFeB deposit membrane.
The CoFeB deposited film can also be formed by deposition of a magnetron sputtering coating film by taking CoFeB as a target material.
The top electrode layer, insulating layer and bottom electrode layer may be as previously described.
A fourth object of the present invention is to provide a magnetic capacitor device characterized in that it comprises a Si substrate and a plurality of said magnetic capacitor cells distributed over said Si substrate.
In the magnetic capacitor device, a plurality of the magnetic capacitor units are connected in series, in parallel or in series and parallel.
Preferably, each magnetic capacitor unit has a length of 1.0-2.0 μm and a width of 0.5-1.0 μm; the spacing between the magnetic capacitor units is 0.4-0.6 μm.
Each of the magnetic capacitor cells is preferably 1.0 to 1.6 μm long and 0.5 to 0.8 μm wide. A further preferred size is 1.6 μm by 0.55 μm.
Preferably, the magnetic capacitor device of the present invention further comprises a metal wiring layer and a protective layer, and the specific design is designed by referring to the existing conventional magnetic capacitor device design.
Further, the metal connecting line layer is Al96～98％Si1～2％Cu1～2％The method can be realized by adopting the existing deposition method of the standard metal connecting line layer in the field;
furthermore, the protective layer is silicon oxide or silicon nitride, and can be realized by adopting the existing standard Plasma Enhanced Chemical Vapor Deposition (PECVD) method.
A fifth object of the present invention is to provide a method for manufacturing the magnetic capacitor device, wherein the manufacturing process comprises:
a) deposition of bottom and top electrode layers: alternately taking Ru and Ta as targets on a Si substrate and a magnetic conductive layer, and forming a multilayer nanoscale Ru deposition film and a multilayer nanoscale Ta deposition film by magnetron sputtering film deposition;
b) deposition of magnetic and electrical layers: forming a nano-scale magnetic multilayer film on the bottom electrode layer and the insulating layer by adopting a corresponding alloy target material through magnetron sputtering coating deposition;
c) deposition of an insulating layer: depositing an insulating layer over the magnetic conductive layer using an insulating medium;
e) photoetching and etching: the bottom electrode layer, the top electrode layer, the magnetic conductive layer and the insulating layer are respectively formed after deposition, and then photoetching and etching are carried out according to the size of the magnetic capacitor unit to divide the magnetic capacitor unit into a plurality of micron-sized units; or after all the deposition is finished, the micro-scale unit is divided into a plurality of micro-scale units by photoetching and etching in a unified way.
In the step b, the corresponding alloy target materials comprise the cobalt-iron alloy target material, the TaO target material, the CoFeB target material and the like.
Preferably, the method further comprises the steps of:
f) depositing, photoetching and etching a metal connecting line layer;
g) deposition of a protective layer, photolithography and etching.
The arrangement of the insulating layer, the metal connecting line layer and the protective layer can adopt the standard design of the existing magnetic capacitor device, and the steps c to e can adopt the standard method in the field. For the deposition of the insulating and protective layers, plasma enhanced chemical vapor deposition methods standard in the art may be used.
The positive progress effect of the invention is as follows:
1. the key point of the invention is that the atomic ratio is 6.5-7.2: 3.5-2.8, particularly 7:3, cobalt and iron, and the magnetron sputtering coating technology, the prepared multilayer nano-scale film has an excellent giant magnetic effect, can keep good magnetism after being magnetized once, and can be used at high temperatureIt also has good magnetic property, and can be used in semiconductor magnetic energy storage capacitor to make its giant magnetic factor of magnetic capacitor device be 104～105Increase by 109～1012The above. The magnetic capacitor unit prepared by the method can store a large amount of electric energy after being activated once, lays a foundation for developing a passive magnetic energy super capacitor without reciprocating charging, can be used as a substitute of all super capacitors made of carbon materials, metal oxide materials, conductive polymer materials and composite materials at present, and is a new technical revolution for guiding a field of energy storage materials in the future.
2. The multilayer nano-scale magnetic film has better wear resistance, cutting performance and heat resistance due to the existence of cobalt, the cobalt is combined with other metal crystal grains, so that the alloy has higher toughness and reduces the sensitivity to impact, and the alloy is fused on the surface of a part, so that the service life of the part can be prolonged by 3-7 times.
3. The invention creatively adopts the mode of alternately coating Ru and Ta as the electrode and combines the cobalt-iron magnetic film material to successfully prepare the passive semiconductor magnetic capacitor, and the structural characteristics of the alternately coating of the electrode effectively improve the storage efficiency of the semiconductor magnetic capacitor and effectively prolong the service life of the electrode.
4. The magnetic capacitor device can provide super-high power current, has higher starting efficiency and reliability than the traditional storage battery, is not influenced by outdoor temperature, saves energy and protects environment, and the semiconductor magnetic capacitor device type capacitor/battery is expected to completely replace the traditional capacitor and battery products.
5. The magnetic capacitor device can be used as a driving power supply of electronic products such as mobile phones, computers and the like, and can also be used as a starting power supply of electromechanical equipment products, automobiles and the like, once the ultimate technical goal is overcome, the magnetic capacitor device can replace various existing energy storage devices, the energy technology revolution is expected to be initiated, and the magnetic capacitor device is currently in a middle research and development stage.
Drawings
FIG. 1 is a schematic diagram of a magnetic capacitor unit according to the present invention;
FIG. 2 is a flow chart of a process for fabricating a magnetic capacitor chip in accordance with the present invention;
fig. 3 a-3 h are waveform diagrams of C-V Curve of a magnetic capacitor device product of the present invention.
Detailed Description
The present invention will be further described with reference to specific examples.
EXAMPLE 1A magnetic capacitor Unit
A magnetic capacitor unit, as shown in fig. 1, which is covered on a Si substrate 6, and comprises, from top to bottom: a top electrode layer 1, a magnetic conductive layer 2, an insulating layer 3, a magnetic conductive layer 4, and a bottom electrode layer 5, each having the following composition and thickness as in table 1 below.
TABLE 1 structural design of magnetic capacitor unit
Wherein the magnetic conductive layer 2 and the magnetic conductive layer 4 are composed of a plurality of layers of nano-scale magnetic films, and the total thickness is 150-250 nm; each magnetic film is formed by taking cobalt-iron alloy as a target material and depositing through magnetron sputtering coating, and the thickness of each magnetic film is 5-25 nm; in the used cobalt-iron alloy target, the atomic ratio of cobalt to iron is 6.5-7.2: 3.5-2.8, preferably 7: 3.
Preferably, the magnetic capacitor unit has a length of 1.0 to 2.0 μm and a width of 0.5 to 1.0 μm. Further preferably, the dimension is 1.0 to 1.6 μm in length and 0.8 to 1.0 μm in width.
A further preferred size is 1.6 μm by 0.55 μm.
EXAMPLE 2A magnetic capacitor Unit
Compared with the embodiment 1, the difference is that the magnetic and electric layers have the structures shown in the following table 2, the magnetic and electric layers 2 and 4 respectively consist of a plurality of layers of nano-scale CoFeB magnetic films, and the CoFeB magnetic films are deposited by magnetron sputtering coating of CoFeB targets synthesized by CoFe and B and have the thickness of 5-25 nm.
Table 2 structural design of magnetic conductive layer of example 2
EXAMPLE 3A magnetic capacitor Unit
Compared with example 1, the difference is that the structures of the magnetic conductive layer 2 and the magnetic conductive layer 4 are shown in table 3 below, and are respectively formed by magnetron sputtering coating deposition by using three targets of CoFe, TaO and CoFeB.
Structural design of magnetic conductive layer of example 3
EXAMPLE 4A magnetic capacitor device
A magnetic capacitor device comprising a Si substrate 6 and a number of magnetic capacitor cells of embodiment 1 distributed over the Si substrate 6. Tables 4 and 5 show the specific structures of examples 4-1 to 4-5. The magnetic capacitor device is also covered with a metal connecting line layer and a protective layer, wherein the metal connecting line layer is Al96～98％Si1～2％Cu1～2％The protective layer is silicon oxide or silicon nitride.
TABLE 4 structural design of magnetic capacitor unit
TABLE 5 magnetic thin film deposition Structure design (unit nm)
Wherein, the magnetic conductive layer 2 and the magnetic conductive layer 4 are respectively formed by laminating magnetic films deposited by magnetron sputtering coating on a material target material shown in the table 5 with the thickness of 5-25 nm.
Examples 4-1 to 4-5 the process is shown in fig. 2 and includes the following steps:
(a) preparing a cobalt-iron alloy target material: pure Co and Fe raw materials are converted into CoFe with a corresponding mass ratio of 70.47-29.53 according to an atomic ratio of 7: 3. The alloy is smelted by a vacuum smelting furnace after raw material impurities are removed, and the ratio of cobalt and iron atoms is controlled by a series of quality control steps such as spectrum detection at the later stage as follows: 6.5-8.5: 3.5-1.5 percent and the purity is not lower than 95 percent (the total content of cobalt and iron is not less than 95 percent), and after the corresponding product performance is determined, the product is prepared by fine processing of a FANUC numerical control processing center for later use.
(b) Deposition, lithography and etching of the bottom electrode layer 5: taking a Si sheet as a substrate, alternately taking Ru and Ta as targets, forming a plurality of layers of nanoscale Ru deposition films and Ta deposition films by magnetron sputtering film deposition, and then dividing the films into a plurality of micron-sized bottom electrode layer units by photoetching and etching;
(c) deposition of the magnetic, electrically conductive layer 4: depositing a nano-scale magnetic multilayer film on the bottom electrode layer 5 by adopting a corresponding alloy target through magnetron sputtering, and then photoetching and etching;
the target material adopted in the magnetron sputtering in the embodiments 4-3, 4-4 and 4-5 is the cobalt-iron alloy prepared in the step (a);
the target material adopted by the magnetron sputtering of the embodiment 4-2 is a CoFeB target synthesized by CoFe and B;
the target materials adopted by the magnetron sputtering of the embodiment 4-1 are three alloy target materials of CoFe, TaO and CoFeB;
(d) deposition, photoetching and etching of the insulating layer 3;
(e) deposition of the magnetic, electrically conductive layer 2: depositing a nano-scale magnetic multilayer film on the insulating layer 3 by magnetron sputtering, and then photoetching and etching; selecting the target material in the same step (c);
(f) deposition, lithography and etching of the top electrode layer 1: on the magnetic conductive layer 2 prepared in the step (e), alternately depositing by magnetron sputtering with Ru and Ta as targets to form a plurality of layers of nanoscale Ru deposited films and Ta deposited films, and then photoetching and etching; note that the top and bottom electrode layers are symmetrical and have opposite magnetic poles;
(g) depositing, photoetching and etching a metal connecting line layer;
(h) deposition of a protective layer, photolithography and etching.
The arrangement of the insulating layer, the metal connecting wire layer and the protective layer can adopt the standard design of the existing magnetic capacitor device, and the steps d, g and h can adopt the standard method in the field. For the deposition of the insulating and protective layers, plasma enhanced chemical vapor deposition methods standard in the art may be used. The metal connecting wire layer can adopt a magnetron sputtering deposition method.
Size of the magnetic capacitor device produced: 6mm, the width of the scribing groove is less than 200 μm;
the size of the magnetic capacitor unit is 1.6 mu m by 0.55 mu m, and the space between the magnetic capacitor units is 0.5 mu m;
pad size: 100 x 100 μm; planning 8 pads on the left and the right respectively;
and the test circuit comprises 10 magnetic capacitor units which are connected in parallel, and a group of IO test pads 100 micrometers by 100 micrometers are arranged at two ends of the test circuit. In each piece of magnetic capacitor device, 10 groups of test lines (both at the position of a cutting line or a chip) are uniformly distributed.
The product of the invention entrusts the largest semiconductor chip testing center (aptt) in Asia to carry out micro capacitance test, and the test conditions are as follows: a base voltage of 5V; AV level: 250 mV; frequency 1KHz, model Cp-Rp.
Fig. 3a to 3h show waveforms of C-V Curve for 8 magnetic capacitor device products prepared in accordance with examples 4-3 of the present invention, with the abscissa being the test voltage and the ordinate being the measured capacitance at different voltages.
It can be seen from the graph that the 8 magnetic capacitor devices of examples 4-3 of the present invention all have strong capacitance response, and the results are different due to the difference in the process operation of magnetron sputtering coating on the silicon wafer, but all are within the tolerance allowable range. The capacitance response result shows that the cobalt-iron alloy target material with specific atomic proportion found by long-term practice is combined with the semiconductor magnetron sputtering film coating technology and the overall structure design to successfully prepare the semiconductor magnetic capacitor, so that the super capacitor product without reciprocating charging can be prepared, and the super capacitor giant magnetic factor can be predicted to reach 109～1012。
Further test results show that:
1. the capacitance value of 10 magnetic capacitance units ranges from thousands of microfarads to tens of thousands of microfarads;
2. the micro-capacitance withstand voltage value is between 12V and 100V;
in addition, the magnetic capacitance device products of example 4-1 and example 4-2 also detected a capacitance response, but the signal strength was weaker than that of the product of example 4-3.
Comparative example 1
A magnetic capacitor device was fabricated according to the protocol of example 2, except that the atomic ratio of the Co and Fe raw materials was 6:4 when preparing the cobalt-iron alloy target.
Comparative example 2
A magnetic capacitor device was fabricated according to the protocol of example 2, except that the atomic ratio of the Co and Fe raw materials was 8:2 when preparing the cobalt-iron alloy target.
Comparative example 3
A magnetic capacitor device was fabricated by referring to the scheme of example 2 except that the top electrode layer and the bottom electrode layer were structured as follows
Structural design of top and bottom electrode layers of comparative example 3
The products of comparative examples 1-3 were subjected to the microcapacitor test using the same test conditions. However, the C-V Curve waveforms of the products of comparative examples 1-3 did not show a capacitive signal, indicating a weak or even no capacitive response. It can be seen that the atomic ratio of Co to Fe of the cobalt-iron alloy target is a key technical feature of the present invention, and the technical effects of the present invention cannot be achieved beyond or below the limited range. While the multilayer alternating structure of top and bottom electrode layers also has an impact on the inventive solution.
The present invention has been described in detail with reference to the specific examples provided herein to facilitate the understanding and appreciation of the invention by those skilled in the art. Various modifications to these embodiments will be readily apparent to those skilled in the art, and may be applied to other embodiments without the use of the inventive faculty. Therefore, the present invention is not limited to the embodiments described herein, and those skilled in the art should be able to make modifications and alterations to the present invention without departing from the scope of the present invention.
Claims (4)
1. A magnetic capacitor unit, comprising in order from top to bottom: the multilayer magnetic conductive film comprises a plurality of cobalt-iron deposition films, wherein the top electrode layer, the magnetic conductive layer, the insulating layer, the magnetic conductive layer and the bottom electrode layer are arranged in sequence; in the cobalt-iron deposition film, the atomic ratio of cobalt to iron is 6.5-7.2: 3.5-2.8; the thickness of the cobalt-iron deposition film is 5-25 nm; the top electrode layer and the bottom electrode layer are formed by alternately laminating a plurality of layers of nanoscale Ru deposited films and Ta deposited films; the top electrode layer and the bottom electrode layer are symmetrical to each other;
the composition and thickness of each layer were as follows: (Ta 4 to 6nm in thickness/Ru 10 to 20nm in thickness)3Ta of 4 to 6nm in thickness, Ru of 4 to 6nm in thickness, CoFe of 150 to 250nm in total thickness, MgO of 40 to 60nm in total thickness, CoFe of 4 to 6nm in total thickness, Ta of 4 to 6nm in thickness/(Ru of 10 to 20nm in thickness, Ta of 4 to 6nm in thickness)3。
2. The magnetic capacitor cell of claim 1, wherein the cobalt iron deposited film has a cobalt to iron atomic ratio of 7: 3.
3. A magnetic capacitor device comprising a Si substrate and a plurality of magnetic capacitor cells as claimed in any one of claims 1 to 2 distributed over the Si substrate.
4. A method of fabricating the magnetic capacitor device of claim 3, characterized in that the fabrication process comprises:
a) deposition of bottom and top electrode layers: alternately taking Ru and Ta as targets on a Si substrate and a magnetic conductive layer, and forming a multilayer nanoscale Ru deposition film and a multilayer nanoscale Ta deposition film by magnetron sputtering film deposition;
b) deposition of magnetic and electrical layers: forming a nano-scale magnetic multilayer film on the bottom electrode layer and the insulating layer by adopting a corresponding alloy target material through magnetron sputtering coating deposition;
c) deposition of an insulating layer: depositing an insulating layer over the magnetic conductive layer using an insulating medium;
e) photoetching and etching: the bottom electrode layer, the top electrode layer, the magnetic conductive layer and the insulating layer are respectively formed after deposition, and then photoetching and etching are carried out according to the size of the magnetic capacitor unit to divide the magnetic capacitor unit into a plurality of micron-sized units; or after all the deposition is finished, the micro-scale unit is divided into a plurality of micro-scale units by photoetching and etching in a unified way.
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