CN103543414A - Three-dimensional planar magnetic sensor - Google Patents
Three-dimensional planar magnetic sensor Download PDFInfo
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- CN103543414A CN103543414A CN201210242300.1A CN201210242300A CN103543414A CN 103543414 A CN103543414 A CN 103543414A CN 201210242300 A CN201210242300 A CN 201210242300A CN 103543414 A CN103543414 A CN 103543414A
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Abstract
A three-dimensional planar magnetic sensor comprises a first magnetic sensor, a second magnetic sensor, a third magnetic sensor and a circuit. The first magnetic sensor, the second magnetic sensor and the third magnetic sensor are arrange on the same plane and respectively measure component of a magnetic field in the first, second and third directions, and the third direction is perpendicular to the first direction and the second direction. The third magnetic sensor comprises a third fixed layer, a third magnetic insulation layer and a third free layer, wherein the magnetization direction of the third fixed layer is the third direction or the reverse direction, the spontaneous magnetization of the third free layer is the first direction and the second direction or inclines to the third direction by 0-180 degrees, the magnetic resistance value is an intermediate value in the spontaneous magnetization direction and changes along with the magnetic field. The three-dimensional planar magnetic sensor is manufactured by the semiconductor processing technology without vertical binding, output and durability are improved, and cost and time are saved.
Description
Technical field
The present invention relates to a kind of three-dimensional planar Magnetic Sensor, is mainly can be by the sensor of measurement X, Y, Z direction with manufacture of semiconductor setting at grade.
Background technology
Along with scientific and technological development, demand for electronic chart, navigation obviously increases, therefore, the demand of magnetic inductor also increases thereupon, by the characteristic of magnetic induction, can promptly be applied in navigation and GPS, when the compact design along with electronic product, when reducing integral product volume, the design of magnetic inductor is also tested.
The setting of current magnetic inductor, normally have the magnetic inductor that utilizes three same structures is set, both are arranged to conplane vertical direction, in order to measure X-axis component and the Y-axis component in magnetic field, and in order to measure another Magnetic Sensor of magnetic field Z axis component, need to both are vertical with other arrange, because the size design of current integrated circuit is more and more less, due to vertical connection, processing procedure needs two-part to carry out, and process connected vertically, on processing procedure, be difficult to standardization, yield is difficult to improve, and easily produces unsuccessfully, and whole cost is improved.
Therefore, need to a kind ofly can reduce overall volume, the magnetic inductor of three directions is arranged to the sensor construction that same plane reduces the problem on processing procedure.
Summary of the invention
A Magnetic Sensor, comprises the first Magnetic Sensor, the second Magnetic Sensor, the 3rd Magnetic Sensor and circuit, and the first Magnetic Sensor, in order to measure external magnetic field at the component of a first direction; The second Magnetic Sensor, in order to measure external magnetic field at the component of second direction, this second direction is vertical in a plane with this first direction; The 3rd Magnetic Sensor, in order to measure external magnetic field at the component of a third direction, this third direction is all vertical with this first direction and this second direction; And circuit, be connected with this first Magnetic Sensor, this second Magnetic Sensor and the 3rd Magnetic Sensor, to this first Magnetic Sensor, this second Magnetic Sensor and the 3rd Magnetic Sensor, provide curtage, wherein this first Magnetic Sensor, this second Magnetic Sensor and the 3rd Magnetic Sensor are arranged at same plane.
The 3rd Magnetic Sensor, comprise at least one the 3rd fixed bed, at least one the 3rd magnetic insulation layer and one the 3rd free layer, the 3rd free layer is arranged on the superiors, this at least one the 3rd magnetic insulation layer is arranged between this at least one the 3rd fixed bed, and between the superiors of this at least one the 3rd fixed bed and the 3rd free layer, wherein the direction of magnetization of this at least the three fixed bed is a third direction or to be 180 degree reverse with this third direction, the spontaneous magnetization direction of the 3rd free layer is this first direction, this second direction or be 0～180 degree with this third direction and tilt, the magnetic resistance value of the 3rd free layer is an intermediate value in the spontaneous direction of the 3rd free layer, when being subject to this external magnetic field, magnetic resistance value can become large or diminish, thereby measure this magnetic field at the component of this third direction.Respectively the direction of magnetization of the 3rd fixed bed is for being all third direction or to be 180 degree reverse with third direction, also can be for be divided into the stack architecture of reversed arrangement by the 3rd magnetic insulation interlayer, namely the direction of magnetization of the 3rd fixed bed on the 3rd magnetic insulation layer is third direction, and that the direction of magnetization of the 3rd fixed bed under the 3rd magnetic insulation layer and third direction are 180 degree is reverse.
Feature of the present invention is, the characteristic of tunnel magnetic resistance is worn in utilization, form a hybrid-type Spin Valve, thereby the magnetic field sensor of measuring X, Y, Z tri-directions can be arranged to same plane, and can use conventional manufacture of semiconductor at present to make, and do not need the vertically step of gluing of tradition, and can improve production capacity, yield and durability, reduce cost and Production Time simultaneously.
Accompanying drawing explanation
Fig. 1 and Fig. 2 are the assembly schematic diagram of three-dimensional planar Magnetic Sensor of the present invention.
Wherein, description of reference numerals is as follows:
1 three-dimensional planar Magnetic Sensor
10 first Magnetic Sensors
11 first fixed beds
13 first magnetic insulation layers
15 first free layers
20 second Magnetic Sensors
21 second fixed beds
23 second magnetic insulation layers
25 second free layers
30 the 3rd Magnetic Sensors
31 the 3rd fixed beds
33 the 3rd magnetic insulation layers
35 the 3rd free layers
40 circuit
Embodiment
Below coordinate graphic and element numbers to do more detailed description to embodiments of the present invention, and make to be familiar with these those skilled in the art and can implement according to this after studying this instructions carefully.
Consult Fig. 1 and Fig. 2, the assembly schematic diagram of three-dimensional planar Magnetic Sensor of the present invention.As shown in Figures 1 and 2, three-dimensional planar Magnetic Sensor 1 of the present invention comprises one first Magnetic Sensor 10, one second Magnetic Sensor 20, one the 3rd Magnetic Sensor 30 and circuit 40, and the first Magnetic Sensor 10, the second Magnetic Sensor 20 and the 3rd Magnetic Sensor 30 are arranged at same plane, the first Magnetic Sensor 10, the second Magnetic Sensor 20 and the 3rd Magnetic Sensor 30 are connected with circuit 40.
The first Magnetic Sensor 10 comprises at least one the first fixed bed 11, at least one the first magnetic insulation layer 13 and one first free layer 15, the first free layer 15 is arranged on the superiors, this at least one first magnetic insulation layer 13 is arranged between the first fixed bed 11 of the superiors, and first between fixed bed 11 and the first free layer 15, wherein the spontaneous magnetization direction of this first free layer 15 is first direction, the magnetic resistance value of this first free layer 15 is minimum value when first direction, when being subject to outside magnetic force, the direction of magnetization of the first free layer 15 produces skew from meeting, and magnetic resistance value becomes large, and then can go out by the change calculations of magnetic resistance value outside magnetic force at the component of first direction.Respectively the direction of magnetization of this first fixed bed 11 is for being all first direction or to be 180 degree reverse with first direction, also can be for be partitioned into the stack architecture of reversed arrangement by the first magnetic insulation layer 13, namely the direction of magnetization of the first fixed bed 11 on the first magnetic insulation layer 13 is first direction, and that the direction of magnetization of the first fixed bed 11 under the first magnetic insulation layer 13 and first direction are 180 degree is reverse.
The second Magnetic Sensor 20 comprises at least one the second fixed bed 21, at least one the second magnetic insulation layer 23 and one second free layer 25, the second free layer 25 is arranged on the superiors, this at least one second magnetic insulation layer 23 is arranged between the second fixed bed 21, and between second fixed bed 21 and the second free layer 25 of the superiors.The spontaneous magnetization direction of this second free layer 25 is second direction, and second direction is vertical at grade with first direction.The magnetic resistance value of this second free layer 25 is minimum value when second direction, when being subject to outside magnetic force, the direction of magnetization of the second free layer 25 produces skew from meeting, and magnetic resistance value becomes large, and then can go out by the change calculations of magnetic resistance value outside magnetic force at the component of second direction.Respectively the direction of magnetization of this second fixed bed 21 is for being all second direction or to be 180 degree reverse with second direction, also can be for be partitioned into the stack architecture of reversed arrangement by the second magnetic insulation layer 23, namely the direction of magnetization of the second fixed bed 21 on the second magnetic insulation layer 23 is second direction, and that the direction of magnetization of the second fixed bed 21 under the second magnetic insulation layer 23 and second direction are 180 degree is reverse.
The 3rd Magnetic Sensor 30 comprises at least one the 3rd fixed bed 31, at least one the 3rd magnetic insulation layer 33 and one the 3rd free layer 35, the 3rd free layer 35 is arranged on the superiors, this at least one the 3rd magnetic insulation layer 33 is arranged between the 3rd fixed bed 31, and between the 3rd free layer 35 of the 3rd fixed bed 31 and the superiors, wherein the direction of magnetization of the 3rd fixed bed 31 can be entirely for third direction or with third direction, to be 180 degree reverse, third direction is all vertical with first direction and second direction.And the spontaneous magnetization direction of the 3rd free layer 35 is first direction, second direction or is 0～180 degree inclination with third direction, the magnetic resistance value of the 3rd free layer 35 is an intermediate value in its spontaneous direction, when being subject to outside magnetic force, the direction of magnetization of the 3rd free layer 25 produces skew from meeting, and the change that produces corresponding magnetic resistance value is large or diminish, and then can go out by the change calculations of magnetic resistance value outside magnetic force at the component of third direction.Respectively the direction of magnetization of the 3rd fixed bed 31 is for being all third direction or to be 180 degree reverse with third direction, also can be for be partitioned into the stack architecture of reversed arrangement by the 3rd magnetic insulation layer 33, namely the direction of magnetization of the 3rd fixed bed 31 on the 3rd magnetic insulation layer 33 is third direction, and that the direction of magnetization of the 3rd fixed bed 31 under the 3rd magnetic insulation layer 33 and third direction are 180 degree is reverse.
Wherein the material of this first fixed bed 11 and this second fixed bed 21 is iron (Fe), cobalt (Co), nickel (Ni), ferro-cobalt boron (CoFeB) alloy, ferronickel (NiFe) alloy, ferro-cobalt (CoFe) alloy, centroid structure-cobalt platinum (FCC-CoPt) alloy, L1
0cobalt-platinum alloy (L1
0-CoPt), centroid structure-iron platinum (FCC-FePt) alloy, L1
0ferroplatinum (L1
0etc.-FePt), ferromagnetic alloy at least one of them.The material of the 3rd fixed bed 31 is iron (Fe), cobalt (Co), nickel (Ni), ferro-cobalt boron (CoFeB) alloy, mD
019 cobalt-platinum alloy mD
019-CoPt), L1
0iron palldium alloy (L1
1-FePd), L1
0cobalt-platinum alloy (L1
0-CoPt), L1
1-cobalt-platinum alloy (L1
1-CoPt), L1
0ferroplatinum (L1
0-FePt), cobalt/platinum Multilayer stack structure ([Co/Pt]
nmultilayer), cobalt/palladium Multilayer stack structure ([Co/Pd]
nmultilayer), nickel/palladium Multilayer stack structure ([Ni/Pd]
nmultilayer), nickel/platinum Multilayer stack structure ([Ni/Pt]
nmultilayer), ferro-cobalt boron alloy/platinum Multilayer stack structure ([CoFeB/Pt]
nmultilayer), ferro-cobalt boron alloy/palladium Multilayer stack structure ([CoFeB/Pd]
nmultilayer), Rhometal/platinum Multilayer stack structure ([NiFe/Pt]
nmultilayer), Rhometal/palladium Multilayer stack structure ([NiFe/Pd]
nmultilayer), ferro-cobalt/platinum Multilayer stack structure ([CoFe/Pt]
nmultilayer), ferro-cobalt/palladium Multilayer stack structure ([CoFe/Pd]
netc. multilayer), ferromagnetic alloy or etc. ferromagnetic alloy multilayer film at least one of them.
The material of this first free layer 15 and this second free layer 25 be iron (Fe), cobalt (Co), nickel (Ni), ferro-cobalt boron (CoFeB) alloy, ferronickel (NiFe) alloy, ferro-cobalt (CoFe) alloy, cobalt nickel (CoNi) alloy and etc. ferromagnetic alloy at least one of them, the material of the 3rd free layer 35 is iron (Fe), cobalt (Co), nickel (Ni), ferro-cobalt boron (CoFeB) alloy, mD
019 cobalt-platinum alloy (mD
019-CoPt), L1
0cobalt-platinum alloy (L1
0-CoPt), L1
1-cobalt-platinum alloy (L1
1-CoPt), L1
0ferroplatinum (L1
0-FePt), L1
0iron palldium alloy (L1
0-FePd), cobalt/platinum Multilayer stack structure ([Co/Pt]
nmultilayer), cobalt/palladium Multilayer stack structure ([Co/Pd]
nmultilayer), nickel/palladium Multilayer stack structure ([Ni/Pd]
nmultilayer), nickel/platinum Multilayer stack structure ([Ni/Pt]
nmultilayer), ferro-cobalt boron alloy/platinum Multilayer stack structure ([CoFeB/Pt]
nmultilayer), ferro-cobalt boron alloy/palladium Multilayer stack structure ([CoFeB/Pd]
nmultilayer), Rhometal/platinum Multilayer stack structure ([NiFe/Pt]
nmultilayer), Rhometal/palladium Multilayer stack structure ([NiFe/Pd]
nmultilayer), ferro-cobalt/platinum Multilayer stack structure ([CoFe/Pt]
nmultilayer), ferro-cobalt/palladium Multilayer stack structure ([CoFe/Pd]
netc. multilayer), ferromagnetic alloy or etc. ferromagnetic alloy multilayer film at least one of them.
The first magnetic insulation layer 13 and the second magnetic insulation layer 23 can be made by nonmagnetic metal or solenoid isolation body, the 3rd magnetic insulation layer 33 is made by solenoid isolation body, wherein this nonmagnetic metal comprise ruthenium (Ru), tantalum (Ta), chromium (Cr), titanium (Ti), copper (Cu), palladium (Pd), molybdenum (Mo) and niobium (Nb) at least one of them; This solenoid isolation body comprises magnesium oxide (MgO), aluminium oxide (Al
2o
3), tantalum oxide (Ta
2o
5), silicon dioxide (SiO
2) at least one of them.
Feature of the present invention is, the characteristic of tunnel magnetic resistance is worn in utilization, form a hybrid-type Spin Valve, thereby the magnetic field sensor of measuring X, Y, Z tri-directions can be arranged to same plane, and can use conventional manufacture of semiconductor at present to make, and do not need the vertically step of gluing of tradition, and can improve production capacity, yield and durability, reduce cost and Production Time simultaneously.
The foregoing is only to explain preferred embodiment of the present invention; not attempt is done any pro forma restriction to the present invention according to this; therefore, all have under identical invention spirit, do relevant any modification of the present invention or change, all must be included in the category that the invention is intended to protection.
Claims (13)
1. a three-dimensional planar Magnetic Sensor, is characterized in that, comprises:
One first Magnetic Sensor, in order to measure an external magnetic field at the component of a first direction;
One second Magnetic Sensor, in order to measure an external magnetic field at the component of a second direction, this second direction is vertical in a plane with this first direction;
One the 3rd Magnetic Sensor, comprise at least one the 3rd fixed bed, at least one the 3rd magnetic insulation layer and one the 3rd free layer, the 3rd free layer is arranged on the superiors, this at least one the 3rd magnetic insulation layer is arranged between this at least one the 3rd fixed bed, and between the superiors of this at least one the 3rd fixed bed and the 3rd free layer, wherein the direction of magnetization of this at least one the 3rd fixed bed is a third direction or to be 180 degree reverse with this third direction, this third direction is all vertical with this first direction and this second direction, the spontaneous magnetization direction of the 3rd free layer is this first direction, this second direction or be 0 to 180 degree with this third direction and tilt, the magnetic resistance value of the 3rd free layer is an intermediate value in the spontaneous direction of the 3rd free layer, when being subject to this external magnetic field, magnetic resistance value can become large or diminish, thereby measure this magnetic field at the component of this third direction, and
One circuit, be connected with this first Magnetic Sensor, this second Magnetic Sensor and the 3rd Magnetic Sensor, to this first Magnetic Sensor, this second Magnetic Sensor and the 3rd Magnetic Sensor, provide curtage, wherein this first Magnetic Sensor, this second Magnetic Sensor and the 3rd Magnetic Sensor are arranged at same plane.
2. three-dimensional planar Magnetic Sensor as claimed in claim 1, is characterized in that, for this third direction or complete and this third direction, to be 180 degree reverse entirely for the direction of magnetization of this at least one the 3rd fixed bed.
3. three-dimensional planar Magnetic Sensor as claimed in claim 1, it is characterized in that, the direction of magnetization of the 3rd fixed bed on the 3rd magnetic insulation layer is this third direction, and that the direction of magnetization of the 3rd fixed bed under the 3rd magnetic insulation layer and this third direction are 180 degree is reverse.
4. three-dimensional planar Magnetic Sensor as claimed in claim 1, it is characterized in that, this first Magnetic Sensor comprises at least one the first fixed bed, at least one the first magnetic insulation layer and one first free layer, this first free layer is arranged on the superiors, this at least one first magnetic insulation layer is arranged between this at least one first fixed bed, and between the superiors of this at least one the first fixed bed and this first free layer, wherein to be 180 degree reverse for this first direction or with this first direction for the direction of magnetization of this at least one the first fixed bed, the spontaneous magnetization direction of this first free layer is this first direction, the magnetic resistance value of this first free layer is minimum value when this first direction, when being subject to this external magnetic field, it is large that magnetic resistance value becomes, thereby this outside magnetic force of amount side is at the component of this first direction, this second Magnetic Sensor comprises at least one the second fixed bed, at least one the second magnetic insulation layer and one second free layer, this second free layer is arranged on the superiors, this at least one second magnetic insulation layer is arranged between this at least one second fixed bed, and between the superiors of this at least one the second fixed bed and this second free layer, wherein to be 180 degree reverse for this second direction or with this second direction for the direction of magnetization of this at least one the second fixed bed, the spontaneous magnetization direction of this second free layer is this second direction, the magnetic resistance value of this second free layer is minimum value when this second direction, when being subject to this external magnetic field, it is large that magnetic resistance value becomes, thereby this outside magnetic force of amount side is at the component of this second direction.
5. three-dimensional planar Magnetic Sensor as claimed in claim 4, is characterized in that, for this first direction or complete and this first direction, to be 180 degree reverse entirely for the direction of magnetization of this at least one the first fixed bed.
6. three-dimensional planar Magnetic Sensor as claimed in claim 4, is characterized in that, for this second direction or complete and this second direction, to be 180 degree reverse entirely for the direction of magnetization of this at least one the second fixed bed.
7. three-dimensional planar Magnetic Sensor as claimed in claim 4, it is characterized in that, the direction of magnetization of this first fixed bed on this first magnetic insulation layer is this first direction, and that the direction of magnetization of this first fixed bed under this first magnetic insulation layer and this first direction are 180 degree is reverse.
8. three-dimensional planar Magnetic Sensor as claimed in claim 4, it is characterized in that, the direction of magnetization of this second fixed bed on this second magnetic insulation layer is this second direction, and that the direction of magnetization of this second fixed bed under this second magnetic insulation layer and this second direction are 180 degree is reverse.
9. three-dimensional planar Magnetic Sensor as claimed in claim 4, it is characterized in that, when this circuit provides electric current or during voltage, this electric current, by this this first Magnetic Sensor, this second Magnetic Sensor and the 3rd Magnetic Sensor, is measured the magnetic resistance change rate of this first Magnetic Sensor, this second Magnetic Sensor and the 3rd Magnetic Sensor.
10. three-dimensional planar Magnetic Sensor as claimed in claim 1, is characterized in that, the 3rd magnetic insulation layer is made by a solenoid isolation body, this solenoid isolation body comprise magnesium oxide, aluminium oxide, tantalum oxide, silicon dioxide at least one of them.
11. Three-Dimensional Magnetic sensors as claimed in claim 1, is characterized in that, the material of the 3rd fixed bed is for being iron, cobalt, nickel, ferro-cobalt boron alloy, mD
019 cobalt-platinum alloys, L1
0iron palldium alloy, L1
0cobalt-platinum alloy, L1
1-cobalt-platinum alloy, L1
0ferroplatinum, cobalt/platinum Multilayer stack structure, cobalt/palladium Multilayer stack structure, nickel/palladium Multilayer stack structure, nickel/platinum Multilayer stack structure, ferro-cobalt boron alloy/platinum Multilayer stack structure, ferro-cobalt boron alloy/palladium Multilayer stack structure, Rhometal/platinum Multilayer stack structure, Rhometal/palladium Multilayer stack structure, ferro-cobalt/platinum Multilayer stack structure, ferro-cobalt/palladium Multilayer stack structure, etc. ferromagnetic alloy or etc. ferromagnetic alloy multilayer film at least one of them, the material of the 3rd free layer is iron, cobalt, nickel, ferro-cobalt boron alloy, mD
019 cobalt-platinum alloys, L1
0cobalt-platinum alloy, L1
1-cobalt-platinum alloy, L1
0ferroplatinum, L1
0iron palldium alloy, cobalt/platinum Multilayer stack structure, cobalt/palladium Multilayer stack structure, nickel/palladium Multilayer stack structure, nickel/platinum Multilayer stack structure, ferro-cobalt boron alloy/platinum Multilayer stack structure, ferro-cobalt boron alloy/palladium Multilayer stack structure, Rhometal/platinum Multilayer stack structure, Rhometal/palladium Multilayer stack structure, ferro-cobalt/platinum Multilayer stack structure, ferro-cobalt/palladium Multilayer stack structure, etc. ferromagnetic alloy or etc. ferromagnetic alloy multilayer film at least one of them.
12. Three-Dimensional Magnetic sensors as claimed in claim 4, is characterized in that, the material of the material of this first fixed bed and this second fixed bed is iron, cobalt, nickel, ferro-cobalt boron alloy, Rhometal, ferro-cobalt, centroid structure-cobalt-platinum alloy, L1
0cobalt-platinum alloy, L1
1cobalt-platinum alloy, centroid structure-ferroplatinum, L1
0ferroplatinum, and etc. ferromagnetic alloy at least one of them, the material of this first free layer for and the material of this second free layer be iron, cobalt, nickel, ferro-cobalt boron alloy, Rhometal, ferro-cobalt, cobalt-nickel alloy and etc. ferromagnetic alloy at least one of them.
13. three-dimensional planar Magnetic Sensors as claimed in claim 4, it is characterized in that, this the first magnetic insulation layer and this second magnetic insulation layer are made by a nonmagnetic metal or a solenoid isolation body, wherein this this nonmagnetic metal comprise ruthenium, tantalum, chromium, titanium, copper, palladium, molybdenum and niobium at least one of them, this solenoid isolation body comprise magnesium oxide, aluminium oxide, tantalum oxide, silicon dioxide at least one of them.
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| CN201210242300.1A CN103543414A (en) | 2012-07-13 | 2012-07-13 | Three-dimensional planar magnetic sensor |
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| CN109478593A (en) * | 2016-07-04 | 2019-03-15 | 株式会社电装 | Magnetic Sensor |
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Application publication date: 20140129 |