CN110181382B - System and method for preparing semiconductor wafer - Google Patents
System and method for preparing semiconductor wafer Download PDFInfo
- Publication number
- CN110181382B CN110181382B CN201910403500.2A CN201910403500A CN110181382B CN 110181382 B CN110181382 B CN 110181382B CN 201910403500 A CN201910403500 A CN 201910403500A CN 110181382 B CN110181382 B CN 110181382B
- Authority
- CN
- China
- Prior art keywords
- microns
- ceramic disc
- polishing
- heating
- wax
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 41
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 239000000919 ceramic Substances 0.000 claims abstract description 153
- 238000010438 heat treatment Methods 0.000 claims abstract description 148
- 238000005498 polishing Methods 0.000 claims abstract description 139
- 238000002844 melting Methods 0.000 claims abstract description 23
- 230000008018 melting Effects 0.000 claims abstract description 23
- 238000010030 laminating Methods 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 94
- 229910052710 silicon Inorganic materials 0.000 abstract description 94
- 239000010703 silicon Substances 0.000 abstract description 94
- 238000007517 polishing process Methods 0.000 abstract description 9
- 235000012431 wafers Nutrition 0.000 description 143
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- 238000010309 melting process Methods 0.000 description 4
- 238000003303 reheating Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000004018 waxing Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a system and a method for preparing a semiconductor wafer, wherein the system comprises: the wax applying device is provided with a movable ceramic disc and is used for supplying polishing wax to the ceramic disc; the first heating device is connected with the wax applying device and is used for rotatably placing the ceramic disc on the first heating device and heating and melting polishing wax on the ceramic disc; the laminating device is connected with the first heating device and is used for laminating the wafer on the side, provided with the polishing wax, of the ceramic disc; the second heating device is movably arranged above the bonding device and used for heating the ceramic disc bonded with the silicon wafer to reduce stress; and the polishing device is connected with the attaching device and is used for polishing the wafer attached to the ceramic disc. The system can ensure the smooth operation of the polishing process, thereby improving the yield of the semiconductor wafer.
Description
Technical Field
The invention belongs to the field of monocrystalline silicon, and particularly relates to a system and a method for preparing a semiconductor wafer.
Background
The preparation process of the semiconductor wafer comprises the procedures of crystal growth, cutting, polishing, cleaning and the like, wherein the polishing procedure is one of the key technologies of wafer surface processing. The conventional polishing process sequentially comprises the steps of waxing, heating and melting, attaching, reheating and polishing, however, the polishing process is compact in space, only one heating device is adopted in the polishing process, namely, the heating and melting and reheating steps are carried out on the same heating device, namely, the reheating step needs to adopt a gripper to return the attached wafer to the heating device in the heating and melting step, so that the conventional polishing process is disturbed, and the yield is low. In addition, in the bonding step, the wafer is stressed unevenly, and the surface has pressure difference, which can cause the flatness of the polished wafer to be reduced, and seriously affect the subsequent processing procedure.
Therefore, the technology of the existing polishing process is yet to be further improved.
Disclosure of Invention
The present invention is directed to solving, at least to some extent, one of the technical problems in the related art. To this end, an object of the present invention is to provide a system and a method for manufacturing a semiconductor wafer, by which smooth progress of a polishing process can be ensured to thereby improve a yield of the semiconductor wafer, and at the same time, a second heating means removes a residual pressure to make the wafer uniformly stressed, thereby greatly improving flatness of the wafer.
In one aspect of the invention, a system for preparing a semiconductor wafer is provided. According to an embodiment of the invention, the system comprises:
the wax applying device is provided with a movable ceramic disc and is used for supplying polishing wax to the ceramic disc;
the first heating device is connected with the wax applying device and is used for rotatably placing the ceramic disc on the first heating device and heating and melting polishing wax on the ceramic disc;
the laminating device is connected with the first heating device and is used for laminating the wafer on the side, provided with the polishing wax, of the ceramic disc;
the second heating device is movably arranged above the bonding device and used for heating the ceramic disc of the bonded wafer so as to reduce stress;
and the polishing device is connected with the attaching device and is used for polishing the wafer attached to the ceramic disc.
According to the system for preparing the semiconductor wafer, the second heating device is arranged above the laminating device, namely two heating devices are adopted in the process, so that the wafer laminated on the laminating device is directly reheated, the wafer does not need to be returned to the heating device for heating and melting, the smoothness of the whole process flow is ensured, the yield is improved, and meanwhile, the second heating device is movably arranged above the laminating device, so that the space of the whole process is not required to be additionally increased.
In addition, the system for manufacturing a semiconductor wafer according to the above embodiment of the present invention may further have the following additional technical features:
in some embodiments of the present invention, the distance between the second heating device and the bonding device is 1-3 cm. Therefore, the uniform heating of the bonded wafer can be ensured.
In some embodiments of the present invention, the second heating device is a microwave heating device or a lamp tube heating device. Therefore, the uniform heating of the bonded wafer can be ensured.
In some embodiments of the invention, the microwave heating device is a magnetron. Therefore, the uniform heating of the bonded wafer can be ensured.
In a second aspect of the invention, a method of fabricating a semiconductor wafer using the system described above is provided. According to an embodiment of the invention, the method comprises:
(1) supplying polishing wax to the ceramic disc by using the wax applying device;
(2) heating and melting the polishing wax on the ceramic disc by using the first heating device;
(3) attaching a wafer to one side of the ceramic disc with polishing wax by using the attaching device;
(4) heating the ceramic disc attached with the wafer by adopting the second heating device;
(5) and (4) polishing the wafer in the step (4) by using a polishing device.
By adopting the system, the bonded wafer can be reheated by adopting the second heating device without returning to the heating device for the heating and melting process, so that the smoothness of the whole process flow is ensured, and the yield is improved; meanwhile, the second heating device eliminates residual pressure to ensure that the stress of the wafer is uniform, the flatness of the wafer is improved, and the wafer is ensured to have good quality
In addition, the method for manufacturing a semiconductor wafer according to the above embodiment of the present invention may further have the following additional technical features:
in some embodiments of the invention, in step (1), the polishing wax is applied in an amount of 3 to 15 ml per inch of the ceramic disk. Therefore, the polishing wax on the ceramic disc is uniformly distributed.
In some embodiments of the present invention, in the step (2), the rotation speed of the ceramic disc is 500-800 rpm. Therefore, the wafer and the ceramic disc can be ensured to be tightly attached.
In some embodiments of the present invention, in the step (2), the thickness of the polishing wax layer after melting on the ceramic disc is 1 to 200 μm. Therefore, the wafer and the ceramic disc can be ensured to be tightly attached.
In some embodiments of the present invention, in the step (4), the temperature of the second heating device is 500 to 600 degrees celsius for 20 to 30 seconds. Thereby, the heating efficiency can be remarkably improved.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a schematic diagram of a system for fabricating a semiconductor wafer according to one embodiment of the present invention;
FIG. 2 is a schematic flow chart of a method of preparing a semiconductor wafer according to one embodiment of the present invention;
FIG. 3 is a graph showing the results of Total Thickness Variation (TTV) of silicon wafers obtained in examples 1 to 6 and the prior art.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
The wafers in the following examples are described in detail with reference to silicon wafers, but are not limited to the silicon wafers themselves.
In one aspect of the invention, a system for preparing a semiconductor wafer is provided. According to an embodiment of the invention, with reference to fig. 1, the system comprises: a wax applying apparatus 100, a first heating apparatus 200, a bonding apparatus 300, a second heating apparatus 400, and a polishing apparatus 500.
According to an embodiment of the present invention, a removable ceramic disk 11 is provided on the wax applying device 100, and the wax applying device 100 is used to supply polishing wax onto the ceramic disk 11. According to one embodiment of the invention, the polishing wax is applied in an amount of 3 to 15 ml per inch of ceramic disc. The inventor finds that if the application amount of the polishing wax is too small, the polishing wax cannot be completely spread on the ceramic disc after being melted, so that the silicon wafer is not tightly attached in the attaching step and the defects of the silicon wafer in the subsequent polishing step are increased, and if the application amount of the polishing wax is too high, the polishing wax is wasted, and excessive polishing wax flows out of the ceramic disc after being melted to pollute other equipment. For example, 3 ml, 4 ml, 5 ml, 6 ml, 7 ml, 8 ml, 9 ml, 10 ml, 11 ml, 12 ml, 13 ml, 14 ml, 15 ml, preferably 5 to 10 ml. The inventor finds that the application amount can ensure that the silicon wafer is tightly attached to the ceramic disc in the subsequent attaching step and improve the polishing quality and efficiency of the silicon wafer. It should be noted that the polishing wax used in the present application is a silicon wafer polishing wax of a type conventionally used in the art and will not be described herein, and the ceramic disk of the present application is preferably an 8-inch ceramic disk.
According to an embodiment of the present invention, a first heating device 200 is connected to the wax applying device 100 and is used to rotatably place the ceramic disk 11 on the first heating device 200 and heat and melt the polishing wax on the ceramic disk 11, so that the polishing wax on the ceramic disk is uniformly spread on the ceramic disk during the melting process. According to an embodiment of the present invention, referring to fig. 1, the second heating device 200 is provided with a rotary platform 21 on the upper surface thereof, and the polishing disk 11 on the wax applying device 100 for applying the polishing wax is moved to the rotary platform 21 on the second heating device 200 by a mechanical gripper (not shown), and the rotary platform 21 rotates the ceramic disk 11. It should be noted that the heating manner adopted by the first heating device is not particularly limited as long as the polishing wax can be melted in the actual operation process.
According to a further embodiment of the invention, the ceramic disc 11 rotates at a speed of 500 to 800 rmp. The inventor finds that if the rotating speed of the ceramic disc is too low, the melted polishing wax cannot be uniformly spread on the ceramic disc, and if the rotating speed of the ceramic disc is too high, the melted polishing wax is thrown out of the ceramic disc to pollute other equipment. For example, the rotation speed is 500rmp, 515rmp, 530rmp, 545rmp, 560rmp, 575rmp, 590rmp, 605rmp, 620rmp, 635rmp, 650rmp, 665rmp, 680rmp, 695rmp, 710rmp, 725rmp, 740rmp, 755rmp, 770rmp, 785rmp, 800rmp, preferably 620 to 710 rmp. The inventor finds that the polishing wax melted on the ceramic disc can be remarkably guaranteed to be uniformly spread on the ceramic disc in the rotating speed range, so that the silicon wafer and the ceramic disc are tightly attached in the attaching process, and the yield of the wafer is further improved.
According to another embodiment of the present invention, the thickness of the melted polishing wax layer on the ceramic disk 11 is 1 to 200 μm. The inventor finds that if the thickness of the wax layer melted on the ceramic disc is too low, the subsequent silicon wafer can not be tightly bonded, so that the quality of the subsequent silicon wafer is reduced, and if the thickness of the wax layer melted on the ceramic disc is too high, on one hand, the heating melting time is prolonged, so that the cost of the silicon wafer processing time is increased, and on the other hand, the melted polishing wax is easy to splash to pollute other equipment in the silicon wafer bonding process. For example, the thickness of the post-melt polishing wax layer is 1 micron, 5 microns, 7 microns, 10 microns, 12 microns, 15 microns, 18 microns, 20 microns, 23 microns, 25 microns, 27 microns, 30 microns, 33 microns, 36 microns, 39 microns, 41 microns, 43 microns, 45 microns, 48 microns, 50 microns, 52 microns, 54 microns, 56 microns, 58 microns, 60 microns, 62 microns, 64 microns, 66 microns, 68 microns, 70 microns, 72 microns, 74 microns, 76 microns, 78 microns, 80 microns, 82 microns, 84 microns, 86 microns, 88 microns, 90 microns, 92 microns, 94 microns, 96 microns, 98 microns, 100 microns, 102 microns, 105 microns, 107 microns, 110 microns, 112 microns, 115 microns, 118 microns, 120 microns, 123 microns, 125 microns, 127 microns, 130 microns, 133 microns, 136 microns, 139 microns, 141 microns, 18 microns, 15 microns, 60 microns, 62 microns, 70 microns, 68 microns, 60 microns, 143 microns, 145 microns, 148 microns, 150 microns, 152 microns, 154 microns, 156 microns, 158 microns, 160 microns, 162 microns, 164 microns, 166 microns, 168 microns, 170 microns, 172 microns, 174 microns, 176 microns, 178 microns, 180 microns, 182 microns, 184 microns, 186 microns, 188 microns, 190 microns, 192 microns, 194 microns, 196 microns, 198 microns, 200 microns, preferably 50-150 microns. The inventors have found that using a thickness in this range significantly ensures that the ceramic disk is in close proximity to the polishing wax, thereby improving wafer yield. More preferably 76 to 130 micrometers, most preferably 80 to 110 micrometers.
According to the embodiment of the present invention, the attaching device 300 is connected to the first heating device 200 and is used to attach the silicon wafer 31 to the side of the ceramic plate 11 having the polishing wax, so that the silicon wafer is closely attached to the ceramic plate 11. According to an embodiment of the present invention, after the polishing wax on the ceramic plate 11 on the first heating device 200 is completely melted and the thickness of the formed wax layer reaches the above requirement, the ceramic plate 11 on the first heating device 200 is moved to the bonding device 300 by using a mechanical gripper (not shown), wherein the side of the ceramic plate 11 having the wax layer faces upward, and then the silicon wafer 31 is bonded to the side of the ceramic plate 11 having the wax layer, so that the ceramic plate 11 and the silicon wafer 31 are tightly bonded.
According to an embodiment of the present invention, a second heating device 400 is movably disposed above the bonding device 300 for heating the wafer-bonded ceramic disk 11 to reduce stress. The inventor finds that by arranging the second heating device 400 above the bonding device 300, namely, by adopting two heating devices in the process, the silicon wafers bonded on the bonding device 300 are directly reheated, so that the silicon wafers do not need to be returned to the heating device for heating and melting, the smooth operation of the whole process flow is ensured, the yield is improved, and meanwhile, because the second heating device 400 is movably arranged above the bonding device 300, the space of the whole process does not need to be additionally increased. Specifically, after the silicon wafer is attached, the second heating device is started to reheat the ceramic disc attached with the silicon wafer, so that the residual stress of the attached silicon wafer is reduced, the silicon wafer is uniformly stressed in the subsequent polishing process, the quality of the silicon wafer is improved, the heating temperature of the second heating device is 500-600 ℃, and the time is 20-30 seconds. The inventor finds that the stress of the bonded silicon wafer can be rapidly eliminated under the heating condition, so that the yield is improved and the quality of the surface of the wafer is improved. For example, the temperature is 500 degrees celsius, 505 degrees celsius, 510 degrees celsius, 515 degrees celsius, 520 degrees celsius, 525 degrees celsius, 530 degrees celsius, 535 degrees celsius, 540 degrees celsius, 545 degrees celsius, 550 degrees celsius, 555 degrees celsius, 560 degrees celsius, 565 degrees celsius, 570 degrees celsius, 575 degrees celsius, 580 degrees celsius, 585 degrees celsius, 590 degrees celsius, 595 degrees celsius, 600 degrees celsius, and the time is 20 seconds, 21 seconds, 22 seconds, 23 seconds, 24 seconds, 25 seconds, 26 seconds, 27 seconds, 28 seconds, 29 seconds, 30 seconds.
According to an embodiment of the present invention, the distance between the second heating device 400 and the bonding device 300 is 1-3 cm. The inventor finds that if the distance is too short, the bonded silicon wafer cannot be uniformly heated, so that the residual stress of the bonded silicon wafer cannot be effectively reduced, and if the distance is too long, a large amount of heat is dissipated, so that the heating cost is increased. For example, the distance is 1cm, 1.1cm, 1.2cm, 1.3cm, 1.4cm, 1.5cm, 1.6cm, 1.7cm, 1.8cm, 1.9cm, 2.0cm, 2.1cm, 2.2cm, 2.3cm, 2.4cm, 2.5cm, 2.6cm, 2.7cm, 2.8cm, 2.9cm, 3 cm. Preferably 1.5-2.5 cm. The inventor finds that the residual stress of the bonded silicon wafer can be reduced to the maximum extent by adopting the distance range, so that the prepared silicon wafer has good quality.
According to another embodiment of the present invention, the second heating device 400 may be a microwave heating device or a lamp heating device in order to significantly reduce the residual stress of the bonded silicon wafer. The inventor finds that the heating device has uniform heat release and light volume, thereby improving the quality of the silicon wafer without additionally increasing the working space of the whole process. Specifically, the microwave heating device may be a magnetron. Therefore, the bonded silicon wafer can be rapidly heated, and the heating efficiency is improved.
According to the embodiment of the present invention, the polishing apparatus 500 is connected to the bonding apparatus 300, and is configured to polish the silicon wafer 31 bonded to the ceramic disk 11, so as to remove surface defects of the silicon wafer, thereby obtaining a wafer. Specifically, the silicon wafer on which the stress is removed by the bonding apparatus 300 is moved to the polishing apparatus 500 by a mechanical gripper (not shown) to be polished. It should be noted that the polishing apparatus 500 is any polishing device in the prior art, and the specific operation in the polishing step is a conventional operation in the prior art, which is not described herein again.
According to the system for preparing the semiconductor wafer, the second heating device is arranged above the laminating device, namely two heating devices are adopted in the process, so that the silicon wafer laminated on the laminating device is directly reheated, the heating device for heating and melting the silicon wafer is not required to be returned, the smooth operation of the whole process flow is ensured, the yield is improved, and meanwhile, the second heating device is movably arranged above the laminating device, so that the space of the whole process is not required to be additionally increased.
In still another aspect of the present invention, the present invention provides a method for manufacturing a semiconductor wafer, which is performed using the above system for manufacturing a semiconductor wafer. According to an embodiment of the invention, referring to fig. 2, the method comprises:
s100: supplying polishing wax to the ceramic disc by using a wax applying device
In this step, the ceramic disk 11 is placed on the wax applying device 100, and polishing wax is supplied to the ceramic disk 11 using the wax applying device 100. According to one embodiment of the invention, the polishing wax is applied in an amount of 3 to 15 ml per inch of ceramic disc. The inventor finds that if the application amount of the polishing wax is too small, the polishing wax cannot be completely spread on the ceramic disc after being melted, so that the silicon wafer is not tightly attached in the attaching step and the defects of the silicon wafer in the subsequent polishing step are increased, and if the application amount of the polishing wax is too high, the polishing wax is wasted, and excessive polishing wax flows out of the ceramic disc after being melted to pollute other equipment. For example, 3 ml, 4 ml, 5 ml, 6 ml, 7 ml, 8 ml, 9 ml, 10 ml, 11 ml, 12 ml, 13 ml, 14 ml, 15 ml, preferably 5 to 10 ml. The inventor finds that the application amount can ensure that the silicon wafer is tightly attached to the ceramic disc in the subsequent attaching step and improve the polishing quality and efficiency of the silicon wafer. It should be noted that the polishing wax used in the present application is a silicon wafer polishing wax of a type conventionally used in the art and will not be described herein, and the ceramic disk of the present application is preferably an 8-inch ceramic disk.
S200: heating and melting polishing wax on the ceramic disc by adopting a first heating device
In this step, the ceramic disk 11 is rotatably placed on the first heating device 200 and the polishing wax on the ceramic disk 11 is heated and melted, so that the polishing wax on the ceramic disk is uniformly spread on the ceramic disk during the melting process. It should be noted that the heating manner adopted by the first heating device is not particularly limited as long as the polishing wax can be melted in the actual operation process.
According to a further embodiment of the invention, the ceramic disc 11 rotates at a speed of 500 to 800 rmp. The inventor finds that if the rotating speed of the ceramic disc is too low, the melted polishing wax cannot be uniformly spread on the ceramic disc, and if the rotating speed of the ceramic disc is too high, the melted polishing wax is thrown out of the ceramic disc to pollute other equipment. For example, the rotation speed is 500rmp, 515rmp, 530rmp, 545rmp, 560rmp, 575rmp, 590rmp, 605rmp, 620rmp, 635rmp, 650rmp, 665rmp, 680rmp, 695rmp, 710rmp, 725rmp, 740rmp, 755rmp, 770rmp, 785rmp, 800rmp, preferably 620 to 710 rmp. The inventor finds that the polishing wax melted on the ceramic disc can be remarkably guaranteed to be uniformly spread on the ceramic disc in the rotating speed range, so that the silicon wafer and the ceramic disc are tightly attached in the attaching process, and the yield of the wafer is further improved.
According to another embodiment of the present invention, the thickness of the melted polishing wax layer on the ceramic disk 11 is 1 to 200 μm. The inventor finds that if the thickness of the wax layer melted on the ceramic disc is too low, the subsequent silicon wafer can not be tightly bonded, so that the quality of the subsequent silicon wafer is reduced, and if the thickness of the wax layer melted on the ceramic disc is too high, on one hand, the heating melting time is prolonged, so that the cost of the silicon wafer processing time is increased, and on the other hand, the melted polishing wax is easy to splash to pollute other equipment in the silicon wafer bonding process. For example, the thickness of the post-melt polishing wax layer is 1 micron, 5 microns, 7 microns, 10 microns, 12 microns, 15 microns, 18 microns, 20 microns, 23 microns, 25 microns, 27 microns, 30 microns, 33 microns, 36 microns, 39 microns, 41 microns, 43 microns, 45 microns, 48 microns, 50 microns, 52 microns, 54 microns, 56 microns, 58 microns, 60 microns, 62 microns, 64 microns, 66 microns, 68 microns, 70 microns, 72 microns, 74 microns, 76 microns, 78 microns, 80 microns, 82 microns, 84 microns, 86 microns, 88 microns, 90 microns, 92 microns, 94 microns, 96 microns, 98 microns, 100 microns, 102 microns, 105 microns, 107 microns, 110 microns, 112 microns, 115 microns, 118 microns, 120 microns, 123 microns, 125 microns, 127 microns, 130 microns, 133 microns, 136 microns, 139 microns, 141 microns, 18 microns, 15 microns, 60 microns, 62 microns, 70 microns, 68 microns, 60 microns, 143 microns, 145 microns, 148 microns, 150 microns, 152 microns, 154 microns, 156 microns, 158 microns, 160 microns, 162 microns, 164 microns, 166 microns, 168 microns, 170 microns, 172 microns, 174 microns, 176 microns, 178 microns, 180 microns, 182 microns, 184 microns, 186 microns, 188 microns, 190 microns, 192 microns, 194 microns, 196 microns, 198 microns, 200 microns, preferably 50-150 microns. The inventors have found that using a thickness in this range significantly ensures that the ceramic disk is in close proximity to the polishing wax, thereby improving wafer yield. More preferably 76 to 130 micrometers, most preferably 80 to 110 micrometers.
S300: attaching the silicon wafer to one side of the ceramic disc with polishing wax by using an attaching device
In this step, the silicon wafer 31 is bonded to the side of the ceramic disk 11 having the polishing wax by using the bonding apparatus 300, so that the silicon wafer is tightly bonded to the ceramic disk 11. Specifically, after the polishing wax on the ceramic disc 11 on the first heating device 200 is completely melted and the thickness of the formed wax layer meets the above requirement, the ceramic disc 11 on the first heating device 200 is moved to the bonding device 300 by using a mechanical gripper (not shown), wherein the side of the ceramic disc 11 having the wax layer faces upward, and then the silicon wafer 31 is bonded to the side of the ceramic disc 11 having the wax layer, so that the ceramic disc 11 and the silicon wafer 31 are tightly bonded.
S400: heating the ceramic plate attached with the silicon wafer by adopting a second heating device
In this step, the silicon wafer-bonded ceramic disk 11 may be heated to reduce stress using a second heating device 400 movably disposed above the bonding device 300. The inventor finds that by arranging the second heating device 400 above the bonding device 300, namely, by adopting two heating devices in the process, the silicon wafers bonded on the bonding device 300 are directly reheated, so that the silicon wafers do not need to be returned to the heating device for heating and melting, the smooth operation of the whole process flow is ensured, the yield is improved, and meanwhile, because the second heating device 400 is movably arranged above the bonding device 300, the space of the whole process does not need to be additionally increased. Specifically, after the silicon wafer is attached, the second heating device is started to reheat the ceramic disc attached with the silicon wafer, so that the residual stress of the attached silicon wafer is reduced, the silicon wafer is uniformly stressed in the subsequent polishing process, the quality of the silicon wafer is improved, the heating temperature of the second heating device is 500-600 ℃, and the time is 20-30 seconds. The inventor finds that the stress of the bonded silicon wafer can be rapidly eliminated under the heating condition, so that the yield is improved and the quality of the surface of the wafer is improved. For example, the temperature is 500 degrees celsius, 505 degrees celsius, 510 degrees celsius, 515 degrees celsius, 520 degrees celsius, 525 degrees celsius, 530 degrees celsius, 535 degrees celsius, 540 degrees celsius, 545 degrees celsius, 550 degrees celsius, 555 degrees celsius, 560 degrees celsius, 565 degrees celsius, 570 degrees celsius, 575 degrees celsius, 580 degrees celsius, 585 degrees celsius, 590 degrees celsius, 595 degrees celsius, 600 degrees celsius, and the time is 20 seconds, 21 seconds, 22 seconds, 23 seconds, 24 seconds, 25 seconds, 26 seconds, 27 seconds, 28 seconds, 29 seconds, 30 seconds.
According to an embodiment of the present invention, the distance between the second heating device 400 and the bonding device 300 is 1-3 cm. The inventor finds that if the distance is too short, the bonded silicon wafer cannot be uniformly heated, so that the residual stress of the bonded silicon wafer cannot be effectively reduced, and if the distance is too long, a large amount of heat is dissipated, so that the heating cost is increased. For example, the distance is 1cm, 1.1cm, 1.2cm, 1.3cm, 1.4cm, 1.5cm, 1.6cm, 1.7cm, 1.8cm, 1.9cm, 2.0cm, 2.1cm, 2.2cm, 2.3cm, 2.4cm, 2.5cm, 2.6cm, 2.7cm, 2.8cm, 2.9cm, 3 cm. Preferably 1.5-2.5 cm. The inventor finds that the residual stress of the bonded silicon wafer can be reduced to the maximum extent by adopting the distance range, and the flatness of the polished silicon wafer is improved, so that the prepared silicon wafer is ensured to have good quality.
S500: polishing the silicon wafer of step S400 by using a polishing device
In this step, the silicon wafer 31 attached to the ceramic disk 11 is polished by the polishing apparatus 500, thereby eliminating the surface defects of the silicon wafer to obtain a wafer. Specifically, the silicon wafer on which the stress is removed by the bonding apparatus 300 is moved to the polishing apparatus 500 by a mechanical gripper (not shown) to be polished. It should be noted that the polishing apparatus 500 is any polishing device in the prior art, and the specific operation in the polishing step is a conventional operation in the prior art, which is not described herein again.
According to the method for preparing the semiconductor wafer, disclosed by the embodiment of the invention, by adopting the system, the bonded silicon wafer can be reheated by adopting the second heating device without returning the bonded silicon wafer to the heating device for the heating melting process, so that the smoothness of the whole process flow is ensured, and the yield is improved.
The invention will now be described with reference to specific examples, which are intended to be illustrative only and not to be limiting in any way.
Example 1
(1) A wax applying device is adopted to supply polishing wax to a ceramic disc (with the size of 8 inches), and the applying amount of the polishing wax is 3 milliliters per inch of the ceramic disc;
(2) heating and melting polishing wax on the ceramic disc by adopting a heating device, wherein the rotating speed of the ceramic disc is 500rpm, and the thickness of a molten polishing wax layer on the ceramic disc is 1 micron;
(3) attaching the silicon wafer to one side of the ceramic disc with the polishing wax by using an attaching device;
(4) heating the ceramic disc attached with the silicon wafer by using a magnetron, wherein the heating temperature is 600 ℃, the heating time is 20 seconds, and the distance between the magnetron and the attaching device is 3 cm;
(5) and (5) polishing the silicon wafer in the step (4) by using a polishing device.
Example 2
(1) A wax applying device is adopted to supply polishing wax to a ceramic disc (with the size of 8 inches), and the applying amount of the polishing wax is 15 milliliters per inch of the ceramic disc;
(2) heating and melting polishing wax on the ceramic disc by adopting a heating device, wherein the rotating speed of the ceramic disc is 800rpm, and the thickness of a molten polishing wax layer on the ceramic disc is 200 microns;
(3) attaching the silicon wafer to one side of the ceramic disc with the polishing wax by using an attaching device;
(4) heating the ceramic disc attached with the silicon wafer by using a lamp tube, wherein the heating temperature is 500 ℃, the heating time is 30 seconds, and the distance between the lamp tube and the attaching device is 1 cm;
(5) and (5) polishing the silicon wafer in the step (4) by using a polishing device.
Example 3
(1) A wax applying device is adopted to supply polishing wax to a ceramic disc (with the size of 8 inches), and the applying amount of the polishing wax is 5 milliliters per inch of the ceramic disc;
(2) heating and melting polishing wax on the ceramic disc by adopting a heating device, wherein the rotating speed of the ceramic disc is 620rpm, and the thickness of a molten polishing wax layer on the ceramic disc is 76 microns;
(3) attaching the silicon wafer to one side of the ceramic disc with the polishing wax by using an attaching device;
(4) heating the ceramic disc attached with the silicon wafer by using a magnetron, wherein the heating temperature is 520 ℃, the heating time is 22 seconds, and the distance between the magnetron and the attaching device is 1.5 cm;
(5) and (5) polishing the silicon wafer in the step (4) by using a polishing device.
Example 4
(1) A wax applying device is adopted to supply polishing wax to a ceramic disc (with the size of 8 inches), and the applying amount of the polishing wax is 10 milliliters per inch of the ceramic disc;
(2) heating and melting polishing wax on the ceramic disc by adopting a heating device, wherein the rotating speed of the ceramic disc is 710rpm, and the thickness of a molten polishing wax layer on the ceramic disc is 80 microns;
(3) attaching the silicon wafer to one side of the ceramic disc with the polishing wax by using an attaching device;
(4) heating the ceramic disc attached with the silicon wafer by using a lamp tube, wherein the heating temperature is 540 ℃, the heating time is 24 seconds, and the distance between the lamp tube and the attaching device is 2 cm;
(5) and (5) polishing the silicon wafer in the step (4) by using a polishing device.
Example 5
(1) A wax applying device is adopted to supply polishing wax to a ceramic disc (with the size of 8 inches), and the applying amount of the polishing wax is 8 milliliters per inch of the ceramic disc;
(2) heating and melting polishing wax on the ceramic disc by adopting a heating device, wherein the rotating speed of the ceramic disc is 750rpm, and the thickness of a molten polishing wax layer on the ceramic disc is 130 microns;
(3) attaching the silicon wafer to one side of the ceramic disc with the polishing wax by using an attaching device;
(4) heating the ceramic disc attached with the silicon wafer by using a lamp tube, wherein the heating temperature is 560 ℃, the time is 28 seconds, and the distance between the lamp tube and the attaching device is 2.5 cm;
(5) and (5) polishing the silicon wafer in the step (4) by using a polishing device.
Example 6
(1) A wax applying device is adopted to supply polishing wax to a ceramic disc (with the size of 8 inches), and the applying amount of the polishing wax is 7.5 milliliters per inch of the ceramic disc;
(2) heating and melting polishing wax on the ceramic disc by adopting a heating device, wherein the rotating speed of the ceramic disc is 650rpm, and the thickness of a polishing wax layer on the melted ceramic disc is 110 microns;
(3) attaching the silicon wafer to one side of the ceramic disc with the polishing wax by using an attaching device;
(4) heating the ceramic disc attached with the silicon wafer by using a magnetron, wherein the heating temperature is 580 ℃, the time is 26 seconds, and the distance between a second heating device (the magnetron or a lamp tube) and the attaching device is 2 cm;
(5) and (5) polishing the silicon wafer in the step (4) by using a polishing device.
The results of Total Thickness Variation (TTV) of the silicon wafers obtained in examples 1 to 6 are shown in FIG. 3. Wherein one of the key parameters for measuring the global flatness of the wafer is TTV (unit: μm). As seen from FIG. 3, the total thickness deviation of the wafers in the 6 examples after the technical scheme is adopted is smaller than that of the prior art, and the flatness of the silicon wafer is obviously improved.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (5)
1. A method for fabricating a semiconductor wafer implemented using a system for fabricating a semiconductor wafer, the system for fabricating a semiconductor wafer comprising:
the wax applying device is provided with a movable ceramic disc and is used for supplying polishing wax to the ceramic disc;
the first heating device is connected with the wax applying device and is used for rotatably placing the ceramic disc on the first heating device and heating and melting polishing wax on the ceramic disc;
the laminating device is connected with the first heating device and is used for laminating the wafer on the side, provided with the polishing wax, of the ceramic disc;
the second heating device is movably arranged above the bonding device and used for heating the ceramic disc of the bonded wafer so as to reduce stress;
a polishing device connected with the bonding device and used for polishing the wafer bonded on the ceramic disc,
wherein the distance between the second heating device and the bonding device is 1-3 cm, the temperature of the second heating device is 500-600 ℃, the time is 20-30 seconds,
the method comprises the following steps:
(1) supplying polishing wax to the ceramic disc by using the wax applying device;
(2) heating and melting the polishing wax on the ceramic disc by using the first heating device;
(3) attaching a wafer to one side of the ceramic disc with polishing wax by using the attaching device;
(4) heating the ceramic disc attached with the wafer by adopting the second heating device;
(5) polishing the wafer in the step (4) by using a polishing device,
wherein, in the step (1), the application amount of the polishing wax is 3-15 ml per inch of the ceramic disc.
2. The method of claim 1, wherein the second heating device is a microwave heating device or a lamp tube heating device.
3. The method of claim 2, wherein the microwave heating device is a magnetron.
4. The method according to claim 1, wherein in the step (2), the rotation speed of the ceramic disc is 500-800 rpm.
5. The method according to claim 1, wherein in the step (2), the thickness of the polishing wax layer after melting on the ceramic disk is 1 to 200 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910403500.2A CN110181382B (en) | 2019-05-15 | 2019-05-15 | System and method for preparing semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910403500.2A CN110181382B (en) | 2019-05-15 | 2019-05-15 | System and method for preparing semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110181382A CN110181382A (en) | 2019-08-30 |
| CN110181382B true CN110181382B (en) | 2020-12-01 |
Family
ID=67716294
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910403500.2A Active CN110181382B (en) | 2019-05-15 | 2019-05-15 | System and method for preparing semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110181382B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113355024A (en) * | 2021-06-01 | 2021-09-07 | 吴万荣 | Polishing wax and preparation process thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07299733A (en) * | 1994-04-26 | 1995-11-14 | Nippon Steel Corp | Method and device for attachment of semiconductor wafer |
| CN2384736Y (en) * | 1999-09-17 | 2000-06-28 | 佛山市佛力机械有限公司 | Automatic polishing and waxing machine |
| CN1828859A (en) * | 2005-02-28 | 2006-09-06 | 大日本网目版制造株式会社 | Wafer treating apparatus |
| CN102693907A (en) * | 2011-03-25 | 2012-09-26 | 不二越机械工业株式会社 | Workpiece bonding method and workpiece bonding apparatus |
| CN103692761A (en) * | 2013-12-20 | 2014-04-02 | 齐鲁工业大学 | LED (Light-Emitting Diode) chip waxing machine and waxing control method |
| CN104759974A (en) * | 2015-04-16 | 2015-07-08 | 常州市科沛达超声工程设备有限公司 | Full-automatic sheet mounter |
| CN206748200U (en) * | 2017-05-17 | 2017-12-15 | 安徽三安光电有限公司 | Wax all-in-one under a kind of automatic waxing |
| CN207508995U (en) * | 2017-10-31 | 2018-06-19 | 青岛嘉星晶电科技股份有限公司 | Semi-automatic benefit wax apparatus |
-
2019
- 2019-05-15 CN CN201910403500.2A patent/CN110181382B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07299733A (en) * | 1994-04-26 | 1995-11-14 | Nippon Steel Corp | Method and device for attachment of semiconductor wafer |
| CN2384736Y (en) * | 1999-09-17 | 2000-06-28 | 佛山市佛力机械有限公司 | Automatic polishing and waxing machine |
| CN1828859A (en) * | 2005-02-28 | 2006-09-06 | 大日本网目版制造株式会社 | Wafer treating apparatus |
| CN102693907A (en) * | 2011-03-25 | 2012-09-26 | 不二越机械工业株式会社 | Workpiece bonding method and workpiece bonding apparatus |
| CN103692761A (en) * | 2013-12-20 | 2014-04-02 | 齐鲁工业大学 | LED (Light-Emitting Diode) chip waxing machine and waxing control method |
| CN104759974A (en) * | 2015-04-16 | 2015-07-08 | 常州市科沛达超声工程设备有限公司 | Full-automatic sheet mounter |
| CN206748200U (en) * | 2017-05-17 | 2017-12-15 | 安徽三安光电有限公司 | Wax all-in-one under a kind of automatic waxing |
| CN207508995U (en) * | 2017-10-31 | 2018-06-19 | 青岛嘉星晶电科技股份有限公司 | Semi-automatic benefit wax apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110181382A (en) | 2019-08-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4311914B2 (en) | Heater module for semiconductor manufacturing equipment | |
| US11242618B2 (en) | Silicon carbide substrate and method of manufacturing the same | |
| TWI594359B (en) | Electrostatic chuck and method for manufacturing electrostatic chuck | |
| CN110181382B (en) | System and method for preparing semiconductor wafer | |
| CN114232104A (en) | Silicon carbide seed crystal bonding method | |
| CN102934217A (en) | Automated thermal slide debonder | |
| JP3880977B2 (en) | Vacuum chuck | |
| CN104064508B (en) | Eliminate the sucker and method of exposing wafer defect out of focus | |
| JP3904943B2 (en) | Sapphire wafer processing method and electronic device manufacturing method | |
| CN110625460B (en) | Planarization process method for wafer-level heterostructure | |
| JP4190232B2 (en) | How to perform mechanical polishing | |
| CN104369085A (en) | Silicon wafer polishing and bonding method | |
| CN104662649B (en) | Direct Bonding technique | |
| CN113223932B (en) | Wafer drying method | |
| TWI510331B (en) | Conditioner disk used in chemical mechanical polishing process and method for making the same | |
| JP3778544B2 (en) | Ceramic member and manufacturing method thereof, table for wafer polishing apparatus | |
| JP3746948B2 (en) | Wafer polisher table | |
| JP2001096454A (en) | Table for wafer polishing device and ceramic structure | |
| JP2016013949A (en) | Method of manufacturing single crystal | |
| KR102674864B1 (en) | Wafer processing method and wafer processing apparatus used therein | |
| TW201912308A (en) | Polishing pad conditioner | |
| TWI854762B (en) | METHOD FOR GRINDING SEMICONDUCTOR CRYSTAL AND METHOD FOR MANUFACTURING SiC EXTENDED INGOT BY USING SAID GRINDING METHOD | |
| JP2000354957A (en) | Table for wafer polishing device, polishing method of semiconductor wafer, manufacture of semiconductor wafer and laminated ceramic structural body | |
| JPS62217633A (en) | Planar plate bonding method | |
| JP4421015B2 (en) | Wafer polisher table |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 221004 No.66, Yangshan Road, Xuzhou Economic Development Zone, Xuzhou City, Jiangsu Province Patentee after: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Address before: 221004 No.66, Yangshan Road, Xuzhou Economic Development Zone, Xuzhou City, Jiangsu Province Patentee before: XUZHOU XINJING SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230517 Address after: 221004 No.66, Yangshan Road, Xuzhou Economic Development Zone, Xuzhou City, Jiangsu Province Patentee after: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 221004 No.66, Yangshan Road, Xuzhou Economic Development Zone, Xuzhou City, Jiangsu Province Patentee before: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. |
|
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 221004 No.66, Yangshan Road, Xuzhou Economic Development Zone, Xuzhou City, Jiangsu Province Patentee after: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Country or region after: China Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Address before: 221004 No.66, Yangshan Road, Xuzhou Economic Development Zone, Xuzhou City, Jiangsu Province Patentee before: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Country or region before: China Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. |