CN110181382A - The system and method for preparing semiconductor wafer - Google Patents
The system and method for preparing semiconductor wafer Download PDFInfo
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- CN110181382A CN110181382A CN201910403500.2A CN201910403500A CN110181382A CN 110181382 A CN110181382 A CN 110181382A CN 201910403500 A CN201910403500 A CN 201910403500A CN 110181382 A CN110181382 A CN 110181382A
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- ceramic disk
- microns
- wax
- laminating apparatus
- silicon wafer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a kind of system and method for preparing semiconductor wafer, the system comprises: applying wax device, the applying wax device are equipped with movably ceramic disk, and for supplying buffing wax on the ceramic disk；First heater, the first heater are connected with the applying wax device, and the buffing wax for being rotatably disposed to the ceramic disk on the first heater and on the heating fusing ceramic disk；Laminating apparatus, the laminating apparatus are connected with the first heater, and the side for being fitted in chip on the ceramic disk with buffing wax；Secondary heating mechanism, the secondary heating mechanism are movably arranged above the laminating apparatus, are heated for the ceramic disk to fitting silicon wafer to reduce stress；Burnishing device, the burnishing device are connected with the laminating apparatus, for polishing to the chip being fitted on ceramic disk.It can guarantee the direct motion of polishing process using the system, to improve semiconductor wafer yield.
Description
Technical field
The invention belongs to monocrystalline silicon fields, and in particular to a kind of system and method for preparing semiconductor wafer.
Background technique
The preparation process of semiconductor wafer includes the processes such as long brilliant, cutting, polishing, cleaning, and wherein polishing process is chip
One of the key technology of surface processing.Existing polishing process successively includes applying wax, heating fusing, fitting, reheats and polish
Step, however due to polishing process spaces compact heating fusing and is reheated only with a heating device in polishing process
Step is carried out on same heating device, that is to say, that bonded wafer need to be returned to using handgrip by reheating step
To the heating device of heating fusing step, original polishing process is not only upset, but also cause under low output.In addition, being bonded
In step, due to chip discontinuity, there is pressure differences on surface, will cause the flatness reduction of chip after polishing, seriously
Ground affects subsequent procedure for processing.
Therefore, the technology of existing polishing process is further improved.
Summary of the invention
The present invention is directed to solve at least some of the technical problems in related technologies.For this purpose, of the invention
One purpose is to propose a kind of system and method for preparing semiconductor wafer, can guarantee the suitable of polishing process using the system
Row, to improve semiconductor wafer yield, while secondary heating mechanism eliminates residual pressure and makes chip uniform force, greatly
Improve the flatness of chip.
In one aspect of the invention, the invention proposes a kind of systems for preparing semiconductor wafer.It is according to the present invention
Embodiment, the system comprises:
Applying wax device, the applying wax device is equipped with movably ceramic disk, and throws for supplying on the ceramic disk
Light wax；
First heater, the first heater are connected with the applying wax device, and being used for can by the ceramic disk
It is rotatably disposed on the first heater and the buffing wax on the ceramic disk is melted in heating；
Laminating apparatus, the laminating apparatus are connected with the first heater, and for chip to be fitted in the pottery
With the side of buffing wax on porcelain dish；
Secondary heating mechanism, the secondary heating mechanism are movably arranged above the laminating apparatus, for fitting
The ceramic disk of chip is heated to reduce stress；
Burnishing device, the burnishing device are connected with the laminating apparatus, for the chip being fitted on ceramic disk into
Row polishing.
The system according to an embodiment of the present invention for preparing semiconductor wafer above laminating apparatus by being arranged the second heating
Device uses two heating devices in this process, so that the chip that completion is bonded on laminating apparatus is directly reheated,
Without returning it into the heating device of heating melting process, it ensure that the direct motion of entire process flow, improve yield, together
When be movably arranged above laminating apparatus due to secondary heating mechanism, and be not required to additionally increase the space of entire process.
In addition, the system according to the above embodiment of the present invention for preparing semiconductor wafer can also have following additional skill
Art feature:
In some embodiments of the invention, the secondary heating mechanism is 1~3cm at a distance from the laminating apparatus.
Thus, it is possible to guarantee that bonded wafer is heated evenly.
In some embodiments of the invention, the secondary heating mechanism is microwave heating equipment or lighting tube heating mechanism.
Thus, it is possible to guarantee that bonded wafer is heated evenly.
In some embodiments of the invention, the microwave heating equipment is magnetron.Thus, it is possible to guarantee bonded wafer
It is heated evenly.
In the second aspect of the invention, the invention proposes a kind of sides that semiconductor wafer is prepared using above system
Method.According to an embodiment of the invention, the described method includes:
(1) buffing wax is supplied on the ceramic disk using the applying wax device；
(2) buffing wax on the ceramic disk is melted using first heater heating；
(3) chip is fitted in the side on the ceramic disk with buffing wax using the laminating apparatus；
(4) ceramic disk of bonded wafer is heated using the secondary heating mechanism；
(5) chip of step (4) is polished using burnishing device.
The method according to an embodiment of the present invention for preparing semiconductor wafer is by using above-mentioned system, it can by adopting
It is reheated with the chip that secondary heating mechanism completes fitting, the heating dress without returning it into heating melting process
It sets, ensure that the direct motion of entire process flow, improve yield；Secondary heating mechanism elimination residual pressure makes chip stress simultaneously
Uniformly, the flatness for improving chip ensure that chip has good quality
In addition, the method according to the above embodiment of the present invention for preparing semiconductor wafer can also have following additional skill
Art feature:
In some embodiments of the invention, it in step (1), is based on every cun of ceramic disk, the buffing wax
Applied amount is 3~15 milliliters.As a result, buffing wax is evenly distributed on ceramic disk.
In some embodiments of the invention, in step (2), the revolving speed of the ceramic disk is 500~800rpm.By
This, it is ensured that chip is fitted closely with ceramic disk.
In some embodiments of the invention, in step (2), on the ceramic disk melt after polish wax layer with a thickness of
1~200 micron.Thus, it is possible to guarantee that chip is fitted closely with ceramic disk.
In some embodiments of the invention, in step (4), the temperature of the secondary heating mechanism is taken the photograph for 500~600
Family name's degree, time are 20~30 seconds.Thus, it is possible to significantly improve heating efficiency.
Additional aspect and advantage of the invention will be set forth in part in the description, and will partially become from the following description
Obviously, or practice through the invention is recognized.
Detailed description of the invention
Above-mentioned and/or additional aspect of the invention and advantage will become from the description of the embodiment in conjunction with the following figures
Obviously and it is readily appreciated that, in which:
Fig. 1 is the system structure diagram according to an embodiment of the invention for preparing semiconductor wafer；
Fig. 2 is the method flow schematic diagram according to an embodiment of the invention for preparing semiconductor wafer；
Fig. 3 is the result spectrogram of embodiment 1-6 with the total thickness deviation (TTV) of gained silicon wafer in the prior art.
Specific embodiment
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
The embodiment of figure description is exemplary, it is intended to is used to explain the present invention, and is not considered as limiting the invention.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise ", " axial direction ", " radial direction ", " circumferential direction " be orientation based on the figure or
Positional relationship is merely for convenience of description of the present invention and simplification of the description, rather than the device or element of indication or suggestion meaning must
There must be specific orientation, be constructed and operated in a specific orientation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include at least one this feature.In the description of the present invention, the meaning of " plurality " is at least two, such as two, three
It is a etc., unless otherwise specifically defined.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " fixation " etc.
Term shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integral；It can be mechanical connect
It connects, is also possible to be electrically connected；It can be directly connected, can also can be in two elements indirectly connected through an intermediary
The interaction relationship of the connection in portion or two elements, unless otherwise restricted clearly.For those of ordinary skill in the art
For, the specific meanings of the above terms in the present invention can be understood according to specific conditions.
In the present invention unless specifically defined or limited otherwise, fisrt feature in the second feature " on " or " down " can be with
It is that the first and second features directly contact or the first and second features pass through intermediary mediate contact.Moreover, fisrt feature exists
Second feature " on ", " top " and " above " but fisrt feature be directly above or diagonally above the second feature, or be merely representative of
First feature horizontal height is higher than second feature.Fisrt feature can be under the second feature " below ", " below " and " below "
One feature is directly under or diagonally below the second feature, or is merely representative of first feature horizontal height less than second feature.
Chip in following embodiments is described in detail by taking silicon wafer as an example, is not limited by silicon wafer itself.
In one aspect of the invention, the invention proposes a kind of systems for preparing semiconductor wafer.It is according to the present invention
Embodiment, with reference to Fig. 1, which includes: applying wax device 100, first heater 200, the heating dress of laminating apparatus 300, second
Set 400 and burnishing device 500.
According to an embodiment of the invention, applying wax device 100 is equipped with movably ceramic disk 11, and applying wax device 100 is used
In supplying buffing wax on ceramic disk 11.According to one embodiment of present invention, it is based on every very little ceramic disk, the application of buffing wax
Amount is 3~15 milliliters.Inventors have found that if the applied amount of buffing wax is very few, so that can not be on ceramic disk after buffing wax fusing
It sprawls completely, so as to cause silicon wafer in laminating step is bonded not close and Defect in subsequent polishing step is caused to increase, and
If the applied amount of buffing wax is excessively high, do not only result in buffing wax waste, and ceramic disk can be flowed out after the fusing of excessive buffing wax and
Pollute other equipment.Such as 3 milliliters, 4 milliliters, 5 milliliters, 6 milliliters, 7 milliliters, 8 milliliters, 9 milliliters, 10 milliliters, 11 milliliters, 12 millis
It rises, 13 milliliters, 14 milliliters, 15 milliliters, preferably 5~10 milliliters.Inventors have found that using the applied amount, it can be subsequent in guarantee
The quality of finish and efficiency of silicon wafer are improved while silicon wafer and ceramic disk fit closely in laminating step.It should be noted that this
Buffing wax used in application is silicon wafer polishing wax class type commonly used in the art, and details are not described herein again, and the application
The ceramic disk that preferably 8 cun of ceramic disk.
According to an embodiment of the invention, first heater 200 is connected with applying wax device 100, and it is used for ceramic disk 11
It is rotatably disposed on first heater 200 and heats the buffing wax on molten ceramic disk 11, so that on ceramic disk
Uniformly paving is dispersed on ceramic disk buffing wax in fusion process.According to one embodiment of present invention, with reference to Fig. 1, the second heating
Device 200 upper surface is equipped with rotating platform 21, by mechanical gripper (not shown) by the application buffing wax on applying wax device 100
Polishing disk 11 is moved on the rotating platform 21 on secondary heating mechanism 200, which drives ceramic disk 11 to rotate.It needs
It is noted that the heating method that first heater uses is not particularly restricted, as long as can satisfy actual mechanical process
Middle buffing wax fusing.
Still another embodiment in accordance with the present invention, the revolving speed of ceramic disk 11 are 500~800rmp.Inventors have found that if pottery
Porcelain dish revolving speed is too low cause after fusing buffing wax can not uniformly paving dissipates on ceramic disk, and the revolving speed of ceramic disk is excessively high causes to melt
Buffing wax after change is thrown out of ceramic disk and pollutes other equipment.For example, revolving speed be 500rmp, 515rmp, 530rmp,
545rmp、560rmp、575rmp、590rmp、605rmp、620rmp、635rmp、650rmp、665rmp、680rmp、695rmp、
710rmp, 725rmp, 740rmp, 755rmp, 770rmp, 785rmp, 800rmp, preferably 620~710rmp.Inventors have found that
It can significantly guarantee that the buffing wax melted on ceramic disk is uniformly spread in the range of speeds to be dispersed on ceramic disk, so that being bonded
Silicon wafer is fitted closely with ceramic disk in process, and then improves wafer yield.
According to still another embodiment of the invention, on ceramic disk 11 melt after polish wax layer with a thickness of 1~200 micron.
Inventors have found that if wax-layer thickness after being melted on ceramic disk it is too low cause the fitting of subsequent silicon wafer possibly can not consolidation, to drop
Low subsequent Si wafer quality, and if on ceramic disk melt after wax-layer thickness it is excessively high, on the one hand extend heating fusing time, cause
Silicon wafer handles time cost and increases, and on the other hand, is easy to cause the buffing wax of fusing to splash during silicon wafer fitting and pollutes
Other equipment.For example, fusing after polish wax layer with a thickness of 1 micron, 5 microns, 7 microns, 10 microns, 12 microns, 15 microns, 18
Micron, 20 microns, 23 microns, 25 microns, 27 microns, 30 microns, 33 microns, 36 microns, 39 microns, 41 microns, 43 microns, 45
Micron, 48 microns, 50 microns, 52 microns, 54 microns, 56 microns, 58 microns, 60 microns, 62 microns, 64 microns, 66 microns, 68
Micron, 70 microns, 72 microns, 74 microns, 76 microns, 78 microns, 80 microns, 82 microns, 84 microns, 86 microns, 88 microns, 90
Micron, 92 microns, 94 microns, 96 microns, 98 microns, 100 microns, 102 microns, 105 microns, 107 microns, 110 microns, 112
Micron, 115 microns, 118 microns, 120 microns, 123 microns, 125 microns, 127 microns, 130 microns, 133 microns, 136 microns,
139 microns, 141 microns, 143 microns, 145 microns, 148 microns, 150 microns, 152 microns, 154 microns, 156 microns, it is 158 micro-
Rice, 160 microns, 162 microns, 164 microns, 166 microns, 168 microns, 170 microns, 172 microns, 174 microns, 176 microns,
178 microns, 180 microns, 182 microns, 184 microns, 186 microns, 188 microns, 190 microns, 192 microns, 194 microns, it is 196 micro-
Rice, 198 microns, 200 microns, preferably 50~150 microns.Inventors have found that can significantly be guaranteed using the thickness within the scope of this
Ceramic disk is fitted closely with buffing wax, to improve wafer yield.More preferable 76~130 microns, most preferably 80~110 microns.
According to an embodiment of the invention, laminating apparatus 300 is connected with first heater 200, and for pasting silicon wafer 31
The side on ceramic disk 300 with buffing wax is closed, so that silicon wafer is fitted tightly on ceramic disk 11.It is according to the present invention
One embodiment, to the wax-layer thickness that buffing wax is completely melt and is formed on the ceramic disk 11 on first heater 200
After reaching above-mentioned requirements, the ceramic disk 11 being located on first heater 200 is moved to by patch using mechanical gripper (not shown)
It attaches together and sets on 300, wherein upward, then silicon wafer 31 is fitted on ceramic disk 11 has the one side on ceramic disk 11 with wax layer
The one side of wax layer, so that ceramic disk 11 is fitted closely with silicon wafer 31.
According to an embodiment of the invention, secondary heating mechanism 400 is movably arranged at the top of laminating apparatus 300, for pair
The ceramic disk 11 of fitting silicon wafer is heated to reduce stress.Inventors have found that by being arranged second above laminating apparatus 300
Heating device 400 uses two heating devices, so that the silicon wafer for being bonded completion on laminating apparatus 300 is direct in this process
It is reheated, the heating device of melting process is heated without returning it into, ensure that the direct motion of entire process flow,
Yield is improved, simultaneously because secondary heating mechanism 400 is movably arranged at 300 top of laminating apparatus, and is not required to additionally increase
The space of entire process.The ceramic disk of fitting silicon wafer is carried out specifically, opening secondary heating mechanism after the completion of silicon wafer fitting
It reheats, to reduce the residual stress of fitting silicon wafer, and then guarantees the silicon wafer uniform stressed in subsequent polishing process and improve
Its quality, and the heating temperature of secondary heating mechanism is 500~600 degrees Celsius, and the time is 20~30 seconds.Inventors have found that
It can guarantee that being bonded silicon chip stress quickly eliminates under the heating condition, to improve the product of wafer surface while improving yield
Matter.Such as temperature is 500 degrees Celsius, 505 degrees Celsius, 510 degrees Celsius, 515 degrees Celsius, 520 degrees Celsius, 525 degrees Celsius, 530
Degree Celsius, 535 degrees Celsius, 540 degrees Celsius, 545 degrees Celsius, 550 degrees Celsius, 555 degrees Celsius, 560 degrees Celsius, 565 degrees Celsius,
570 degrees Celsius, 575 degrees Celsius, 580 degrees Celsius, 585 degrees Celsius, 590 degrees Celsius, 595 degrees Celsius, 600 degrees Celsius, time is
20 seconds, 21 seconds, 22 seconds, 23 seconds, 24 seconds, 25 seconds, 26 seconds, 27 seconds, 28 seconds, 29 seconds, 30 seconds.
According to one embodiment of present invention, secondary heating mechanism 400 is 1~3cm at a distance from laminating apparatus 300.Hair
Bright people's discovery, if causing fitting silicon wafer to be unable to thermally equivalent apart from too short, so that the remnants that fitting silicon wafer cannot be effectively reduced are answered
Power, and if apart from it is too long cause amount of heat scatter and disappear and improve heating cost.For example, distance be 1cm, 1.1cm, 1.2cm,
1.3cm、1.4cm、1.5cm、1.6cm、1.7cm、1.8cm、1.9cm、2.0cm、2.1cm、2.2cm、2.3cm、2.4cm、
2.5cm,2.6cm,2.7cm,2.8cm,2.9cm,3cm.It is preferred that 1.5~2.5cm.Inventors have found that can using the distance range
With the maximized residual stress for reducing fitting silicon wafer, to guarantee that silicon wafer obtained has good quality.
Still another embodiment in accordance with the present invention, in order to significantly reduce the residual stress of fitting silicon wafer, secondary heating mechanism
400 can be microwave heating equipment or lighting tube heating mechanism.Inventors have found that such heating device heat discharges uniform and volume
Lightly, to be not required to additionally increase entire procedures space while improving silicon wafer quality.Specifically, microwave heating equipment
It can be magnetron.Thus, it is possible to quickly be heated to fitting silicon wafer, heating efficiency is improved.
According to an embodiment of the invention, burnishing device 500 is connected with laminating apparatus 300, for being fitted in ceramic disk 11
On silicon wafer 31 polished, to eliminate silicon slice surface defects, obtain chip.Specifically, using mechanical gripper (not shown)
The silicon wafer that elimination stress on laminating apparatus 300 will be located at, which is moved on burnishing device 500, to be polished.It should be noted that throwing
Electro-optical device 500 is arbitrary polissoir in the prior art, and the concrete operations in polishing step are conventional in the prior art
Operation, details are not described herein again.
The system according to an embodiment of the present invention for preparing semiconductor wafer above laminating apparatus by being arranged the second heating
Device uses two heating devices in this process, so that the silicon wafer that completion is bonded on laminating apparatus is directly reheated,
Without returning it into the heating device of heating melting process, it ensure that the direct motion of entire process flow, improve yield, together
When be movably arranged above laminating apparatus due to secondary heating mechanism, and be not required to additionally increase the space of entire process.
In another aspect of the invention, the invention proposes a kind of using the above-mentioned system implementation for preparing semiconductor wafer
The method for preparing semiconductor wafer.According to an embodiment of the invention, with reference to Fig. 2, this method comprises:
S100: buffing wax is supplied on ceramic disk using applying wax device
In the step, ceramic disk 11 is placed on applying wax device 100, and uses applying wax device 100 to ceramic disk 11
Supply buffing wax.According to one embodiment of present invention, based on every very little ceramic disk, the applied amount of buffing wax is 3~15 milliliters.
Inventors have found that if the applied amount of buffing wax is very few, so that can not be sprawled completely on ceramic disk after buffing wax fusing, to lead
Silicon wafer in laminating step is caused to be bonded not close and Defect in subsequent polishing step is caused to increase, and if the applied amount of buffing wax
It is excessively high, buffing wax waste is not only resulted in, and can be flowed out ceramic disk after the fusing of excessive buffing wax and be polluted other equipment.Such as
3 milliliters, 4 milliliters, 5 milliliters, 6 milliliters, 7 milliliters, 8 milliliters, 9 milliliters, 10 milliliters, 11 milliliters, 12 milliliters, 13 milliliters, 14 milliliters,
15 milliliters, preferably 5~10 milliliters.Inventors have found that using the applied amount, can in guaranteeing subsequent laminating step silicon wafer and pottery
The quality of finish and efficiency of silicon wafer are improved while porcelain dish fits closely.It should be noted that buffing wax used herein
For silicon wafer polishing wax class type commonly used in the art, details are not described herein again, and preferably 8 cun of the ceramic disk of the application of ceramics
Disk.
S200: using the buffing wax on first heater heating molten ceramic disk
In the step, ceramic disk 11 is rotatably disposed on first heater 200 and is heated on molten ceramic disk 11
Buffing wax so that the buffing wax on ceramic disk in fusion process uniformly paving be dispersed on ceramic disk.It should be noted that
The heating method that first heater uses is not particularly restricted, and is melted as long as can satisfy buffing wax in actual mechanical process
?.
Still another embodiment in accordance with the present invention, the revolving speed of ceramic disk 11 are 500~800rmp.Inventors have found that if pottery
Porcelain dish revolving speed is too low cause after fusing buffing wax can not uniformly paving dissipates on ceramic disk, and the revolving speed of ceramic disk is excessively high causes to melt
Buffing wax after change is thrown out of ceramic disk and pollutes other equipment.For example, revolving speed be 500rmp, 515rmp, 530rmp,
545rmp、560rmp、575rmp、590rmp、605rmp、620rmp、635rmp、650rmp、665rmp、680rmp、695rmp、
710rmp, 725rmp, 740rmp, 755rmp, 770rmp, 785rmp, 800rmp, preferably 620~710rmp.Inventors have found that
It can significantly guarantee that the buffing wax melted on ceramic disk is uniformly spread in the range of speeds to be dispersed on ceramic disk, so that being bonded
Silicon wafer is fitted closely with ceramic disk in process, and then improves wafer yield.
According to still another embodiment of the invention, on ceramic disk 11 melt after polish wax layer with a thickness of 1~200 micron.
Inventors have found that if wax-layer thickness after being melted on ceramic disk it is too low cause the fitting of subsequent silicon wafer possibly can not consolidation, to drop
Low subsequent Si wafer quality, and if on ceramic disk melt after wax-layer thickness it is excessively high, on the one hand extend heating fusing time, cause
Silicon wafer handles time cost and increases, and on the other hand, is easy to cause the buffing wax of fusing to splash during silicon wafer fitting and pollutes
Other equipment.For example, fusing after polish wax layer with a thickness of 1 micron, 5 microns, 7 microns, 10 microns, 12 microns, 15 microns, 18
Micron, 20 microns, 23 microns, 25 microns, 27 microns, 30 microns, 33 microns, 36 microns, 39 microns, 41 microns, 43 microns, 45
Micron, 48 microns, 50 microns, 52 microns, 54 microns, 56 microns, 58 microns, 60 microns, 62 microns, 64 microns, 66 microns, 68
Micron, 70 microns, 72 microns, 74 microns, 76 microns, 78 microns, 80 microns, 82 microns, 84 microns, 86 microns, 88 microns, 90
Micron, 92 microns, 94 microns, 96 microns, 98 microns, 100 microns, 102 microns, 105 microns, 107 microns, 110 microns, 112
Micron, 115 microns, 118 microns, 120 microns, 123 microns, 125 microns, 127 microns, 130 microns, 133 microns, 136 microns,
139 microns, 141 microns, 143 microns, 145 microns, 148 microns, 150 microns, 152 microns, 154 microns, 156 microns, it is 158 micro-
Rice, 160 microns, 162 microns, 164 microns, 166 microns, 168 microns, 170 microns, 172 microns, 174 microns, 176 microns,
178 microns, 180 microns, 182 microns, 184 microns, 186 microns, 188 microns, 190 microns, 192 microns, 194 microns, it is 196 micro-
Rice, 198 microns, 200 microns, preferably 50~150 microns.Inventors have found that can significantly be guaranteed using the thickness within the scope of this
Ceramic disk is fitted closely with buffing wax, to improve wafer yield.More preferable 76~130 microns, most preferably 80~110 microns.
S300: silicon wafer is fitted on ceramic disk to the side with buffing wax using laminating apparatus
In the step, silicon wafer 31 is fitted in by the side on ceramic disk 300 with buffing wax using laminating apparatus 300, from
And silicon wafer is fitted tightly on ceramic disk 11.Specifically, to be polished on the ceramic disk 11 on first heater 200
After wax is completely melt and the wax-layer thickness that is formed reaches above-mentioned requirements, the first heating will be located at using mechanical gripper (not shown) and filled
The ceramic disk 11 set on 200 is moved on laminating apparatus 300, and wherein the one side on ceramic disk 11 with wax layer upward, then will
Silicon wafer 31 is fitted in the one side on ceramic disk 11 with wax layer, so that ceramic disk 11 is fitted closely with silicon wafer 31.
S400: it is heated using ceramic disk of the secondary heating mechanism to fitting silicon wafer
It, can be using 400 pairs of secondary heating mechanism fittings for being movably disposed at 300 top of laminating apparatus in the step
The ceramic disk 11 of silicon wafer is heated to reduce stress.Inventors have found that by the way that the second heating is arranged above laminating apparatus 300
Device 400 uses two heating devices, so that the silicon wafer for being bonded completion on laminating apparatus 300 directly carries out in this process
It reheats, without returning it into the heating device of heating melting process, ensure that the direct motion of entire process flow, improve
Yield simultaneously because secondary heating mechanism 400 is movably arranged at 300 top of laminating apparatus, and is not required to additionally increase entire
The space of process.The ceramic disk of fitting silicon wafer add again specifically, opening secondary heating mechanism after the completion of silicon wafer is bonded
Heat to reduce the residual stress of fitting silicon wafer, and then guarantees the silicon wafer uniform stressed in subsequent polishing process and improves its product
Matter, and the heating temperature of secondary heating mechanism is 500~600 degrees Celsius, and the time is 20~30 seconds.Inventors have found that should add
It can guarantee that being bonded silicon chip stress quickly eliminates under heat condition, to improve the quality of wafer surface while improving yield.
Such as temperature is 500 degrees Celsius, 505 degrees Celsius, 510 degrees Celsius, 515 degrees Celsius, 520 degrees Celsius, 525 degrees Celsius, it is 530 Celsius
Degree, 535 degrees Celsius, 540 degrees Celsius, 545 degrees Celsius, 550 degrees Celsius, 555 degrees Celsius, 560 degrees Celsius, 565 degrees Celsius, 570
Degree Celsius, 575 degrees Celsius, 580 degrees Celsius, 585 degrees Celsius, 590 degrees Celsius, 595 degrees Celsius, 600 degrees Celsius, the time 20
Second, 21 seconds, 22 seconds, 23 seconds, 24 seconds, 25 seconds, 26 seconds, 27 seconds, 28 seconds, 29 seconds, 30 seconds.
According to one embodiment of present invention, secondary heating mechanism 400 is 1~3cm at a distance from laminating apparatus 300.Hair
Bright people's discovery, if causing fitting silicon wafer to be unable to thermally equivalent apart from too short, so that the remnants that fitting silicon wafer cannot be effectively reduced are answered
Power, and if apart from it is too long cause amount of heat scatter and disappear and improve heating cost.For example, distance be 1cm, 1.1cm, 1.2cm,
1.3cm、1.4cm、1.5cm、1.6cm、1.7cm、1.8cm、1.9cm、2.0cm、2.1cm、2.2cm、2.3cm、2.4cm、
2.5cm,2.6cm,2.7cm,2.8cm,2.9cm,3cm.It is preferred that 1.5~2.5cm.Inventors have found that can using the distance range
With the maximized residual stress for reducing fitting silicon wafer, the flatness of silicon wafer after polishing is improved, to guarantee silicon wafer obtained
With good quality.
S500: it is polished using silicon wafer of the burnishing device to step S400
In the step, the silicon wafer 31 being fitted on ceramic disk 11 is polished using burnishing device 500, to eliminate silicon
Piece surface defect, obtains chip.Stress is eliminated specifically, will be located on laminating apparatus 300 using mechanical gripper (not shown)
Silicon wafer is moved on burnishing device 500 and is polished.It should be noted that burnishing device 500 is arbitrary in the prior art throws
Light device, and the concrete operations in polishing step are routine operation in the prior art, and details are not described herein again.
The method according to an embodiment of the present invention for preparing semiconductor wafer is by using above-mentioned system, it can by adopting
It is reheated with the silicon wafer that secondary heating mechanism completes fitting, the heating dress without returning it into heating melting process
It sets, ensure that the direct motion of entire process flow, improve yield.
Below with reference to specific embodiment, present invention is described, it should be noted that these embodiments are only to describe
Property, without limiting the invention in any way.
Embodiment 1
(1) buffing wax is supplied on ceramic disk (having a size of 8 cun) using applying wax device, is based on every very little ceramic disk, buffing wax
Applied amount be 3 milliliters；
(2) using the buffing wax on heating devices heat molten ceramic disk, the revolving speed of ceramic disk is 500rpm, and ceramic
On disk melt after polish wax layer with a thickness of 1 micron；
(3) silicon wafer is fitted in the side on ceramic disk with buffing wax using laminating apparatus；
(4) it is heated using ceramic disk of the magnetron to fitting silicon wafer, heating temperature is 600 degrees Celsius, the time 20
Second, and magnetron is 3cm at a distance from laminating apparatus；
(5) silicon wafer of step (4) is polished using burnishing device.
Embodiment 2
(1) buffing wax is supplied on ceramic disk (having a size of 8 cun) using applying wax device, is based on every very little ceramic disk, buffing wax
Applied amount be 15 milliliters；
(2) using the buffing wax on heating devices heat molten ceramic disk, the revolving speed of ceramic disk is 800rpm, and ceramic
On disk melt after polish wax layer with a thickness of 200 microns；
(3) silicon wafer is fitted in the side on ceramic disk with buffing wax using laminating apparatus；
(4) it being heated using ceramic disk of the fluorescent tube to fitting silicon wafer, heating temperature is 500 degrees Celsius, and the time is 30 seconds,
And fluorescent tube is 1cm at a distance from laminating apparatus；
(5) silicon wafer of step (4) is polished using burnishing device.
Embodiment 3
(1) buffing wax is supplied on ceramic disk (having a size of 8 cun) using applying wax device, is based on every very little ceramic disk, buffing wax
Applied amount be 5 milliliters；
(2) using the buffing wax on heating devices heat molten ceramic disk, the revolving speed of ceramic disk is 620rpm, and ceramic
On disk melt after polish wax layer with a thickness of 76 microns；
(3) silicon wafer is fitted in the side on ceramic disk with buffing wax using laminating apparatus；
(4) it is heated using ceramic disk of the magnetron to fitting silicon wafer, heating temperature is 520 degrees Celsius, the time 22
Second, and magnetron is 1.5cm at a distance from laminating apparatus；
(5) silicon wafer of step (4) is polished using burnishing device.
Embodiment 4
(1) buffing wax is supplied on ceramic disk (having a size of 8 cun) using applying wax device, is based on every very little ceramic disk, buffing wax
Applied amount be 10 milliliters；
(2) using the buffing wax on heating devices heat molten ceramic disk, the revolving speed of ceramic disk is 710rpm, and ceramic
On disk melt after polish wax layer with a thickness of 80 microns；
(3) silicon wafer is fitted in the side on ceramic disk with buffing wax using laminating apparatus；
(4) it being heated using ceramic disk of the fluorescent tube to fitting silicon wafer, heating temperature is 540 degrees Celsius, and the time is 24 seconds,
And fluorescent tube is 2cm at a distance from laminating apparatus；
(5) silicon wafer of step (4) is polished using burnishing device.
Embodiment 5
(1) buffing wax is supplied on ceramic disk (having a size of 8 cun) using applying wax device, is based on every very little ceramic disk, buffing wax
Applied amount be 8 milliliters；
(2) using the buffing wax on heating devices heat molten ceramic disk, the revolving speed of ceramic disk is 750rpm, and ceramic
On disk melt after polish wax layer with a thickness of 130 microns；
(3) silicon wafer is fitted in the side on ceramic disk with buffing wax using laminating apparatus；
(4) it being heated using ceramic disk of the fluorescent tube to fitting silicon wafer, heating temperature is 560 degrees Celsius, and the time is 28 seconds,
And fluorescent tube is 2.5cm at a distance from laminating apparatus；
(5) silicon wafer of step (4) is polished using burnishing device.
Embodiment 6
(1) buffing wax is supplied on ceramic disk (having a size of 8 cun) using applying wax device, is based on every very little ceramic disk, buffing wax
Applied amount be 7.5 milliliters；
(2) using the buffing wax on heating devices heat molten ceramic disk, the revolving speed of ceramic disk is 650rpm, and ceramic
On disk melt after polish wax layer with a thickness of 110 microns；
(3) silicon wafer is fitted in the side on ceramic disk with buffing wax using laminating apparatus；
(4) it is heated using ceramic disk of the magnetron to fitting silicon wafer, heating temperature is 580 degrees Celsius, the time 26
Second, and secondary heating mechanism (magnetron or fluorescent tube) is 2cm at a distance from laminating apparatus；
(5) silicon wafer of step (4) is polished using burnishing device.
The result of the total thickness deviation (TTV) of silicon wafer obtained by embodiment 1-6 is as shown in Figure 3.Wherein, measurement chip is integrally put down
One of key parameter of smooth degree is TTV (unit: μm).As can be seen from Figure 3, using chip in 6 embodiments after the technical program
Total thickness deviation be both less than the total thickness deviation of the prior art, it will be apparent that improve the flatness of silicon wafer.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or spy described in conjunction with this embodiment or example
Point is included at least one embodiment or example of the invention.In the present specification, schematic expression of the above terms are not
It must be directed to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be in office
It can be combined in any suitable manner in one or more embodiment or examples.In addition, without conflicting with each other, the skill of this field
Art personnel can tie the feature of different embodiments or examples described in this specification and different embodiments or examples
It closes and combines.
Although the embodiments of the present invention has been shown and described above, it is to be understood that above-described embodiment is example
Property, it is not considered as limiting the invention, those skilled in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, modifies, replacement and variant.
Claims (9)
1. a kind of system for preparing semiconductor wafer characterized by comprising
Applying wax device, the applying wax device are equipped with movably ceramic disk, and for supplying buffing wax on the ceramic disk；
First heater, the first heater are connected with the applying wax device, and for the ceramic disk is rotatable
Ground is placed on the first heater and the buffing wax on the ceramic disk is melted in heating；
Laminating apparatus, the laminating apparatus are connected with the first heater, and for chip to be fitted in the ceramic disk
The upper side with buffing wax；
Secondary heating mechanism, the secondary heating mechanism are movably arranged above the laminating apparatus, for bonded wafer
Ceramic disk heated to reduce stress；
Burnishing device, the burnishing device are connected with the laminating apparatus, for throwing to the chip being fitted on ceramic disk
Light.
2. system according to claim 1, which is characterized in that the secondary heating mechanism is at a distance from the laminating apparatus
For 1~3cm.
3. system according to claim 1 or 2, which is characterized in that the secondary heating mechanism be microwave heating equipment or
Lighting tube heating mechanism.
4. system according to claim 3, which is characterized in that the microwave heating equipment is magnetron.
5. a kind of method for preparing semiconductor wafer using system implementation of any of claims 1-4, feature exist
In, comprising:
(1) buffing wax is supplied on the ceramic disk using the applying wax device；
(2) buffing wax on the ceramic disk is melted using first heater heating；
(3) chip is fitted in the side on the ceramic disk with buffing wax using the laminating apparatus；
(4) ceramic disk of bonded wafer is heated using the secondary heating mechanism；
(5) chip of step (4) is polished using burnishing device.
6. according to the method described in claim 5, it is characterized in that, being based on every cun of ceramic disk, institute in step (1)
The applied amount for stating buffing wax is 3~15 milliliters.
7. according to the method described in claim 5, it is characterized in that, in step (2), the revolving speed of the ceramic disk is 500~
800rpm。
8. according to the method described in claim 4, it is characterized in that, in step (2), buffing wax after being melted on the ceramic disk
Layer with a thickness of 1~200 micron.
9. according to the method described in claim 5, it is characterized in that, in step (4), the temperature of the secondary heating mechanism is
500~600 degrees Celsius, the time is 20~30 seconds.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113355024A (en) * | 2021-06-01 | 2021-09-07 | 吴万荣 | Polishing wax and preparation process thereof |
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| CN110181382B (en) | 2020-12-01 |
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