CN110176483B - Organic light emitting diode display - Google Patents
Organic light emitting diode display Download PDFInfo
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- CN110176483B CN110176483B CN201910548765.1A CN201910548765A CN110176483B CN 110176483 B CN110176483 B CN 110176483B CN 201910548765 A CN201910548765 A CN 201910548765A CN 110176483 B CN110176483 B CN 110176483B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
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Abstract
The application provides an organic light-emitting diode display, which is characterized in that a contact hole is formed in a cathode isolation column, a cathode is formed on an auxiliary electrode in the contact hole, the cathode in the contact hole is electrically connected with the auxiliary electrode, and the cathode in the contact hole is connected with a cathode outside the cathode isolation column through a third opening on the side surface of the cathode isolation column, so that the problem of resistance voltage drop of the cathode in a large-size display panel is solved, and the problem that the brightness of the large-size top-emitting display panel is influenced due to large resistance voltage drop of the cathode is solved.
Description
Technical Field
The present application relates to the field of display technologies, and in particular, to an organic light emitting diode display.
Background
Currently, an Organic Light Emitting Diode (OLED) Display includes several Light Emitting modes such as Top Emission (Top Emission), Bottom Emission (Bottom Emission), and Transparent Display (Transparent Display). Among them, the top emission type OLED display has advantages of high resolution and large light emitting area, and is widely applied to small-sized OLED display panels. Since large-sized display panels have a tendency to improve resolution, top emission type display panels have become an important research direction for large-sized display panels. When the top-emitting display panel is manufactured into a large-size display panel, the cathode material is required to be transparent, and the thickness of the cathode cannot be too large, so that the light-emitting rate of the OLED display panel is ensured. Since the thickness of the transparent cathode is thin and the impedance of the cathode material is large, the problem that the light emitting brightness of the display panel is affected due to the excessive transparent electrode Drop (IR Drop) when the top emission type display panel is manufactured into a large-sized display panel occurs.
Therefore, it is necessary to provide a solution to the problem that the brightness of the display panel is affected by the excessive cathode voltage drop when the top emission type display panel is manufactured as a large-sized display panel.
Disclosure of Invention
An object of the present application is to provide an organic light emitting diode display, so as to solve the problem that when a top emission type display panel is manufactured as a large-sized display panel, the luminance of the display panel is affected due to an excessive cathode voltage drop.
In order to achieve the purpose, the technical scheme is as follows.
An organic light emitting diode display, the organic light emitting diode display comprising:
a substrate;
an auxiliary electrode formed on the substrate;
a planarization layer formed on the substrate;
an anode formed on the planarization layer;
a pixel defining layer formed on the planarization layer, the auxiliary electrode, and the anode and having a first opening and a second opening, the first opening being disposed over the anode, the second opening being disposed over the auxiliary electrode;
a cathode isolation column formed on the auxiliary electrode in the second opening, the cathode isolation column having a contact hole and a third opening, the third opening being located on a side surface of the cathode isolation column;
an organic functional layer formed on the pixel defining layer, the cathode isolation column and the anode in the first opening;
and the cathode is formed on the organic functional layer and the auxiliary electrode positioned in the contact hole.
In the above organic light emitting diode display, the cathode separator includes a central portion and a peripheral portion surrounding the central portion, the side surface of the peripheral portion has the third opening, and the contact hole is formed by a gap between the peripheral portion and the central portion.
In the above organic light emitting diode display, the central portion is located at a central position of the peripheral portion.
In the above organic light emitting diode display, the organic functional layer and the cathode are formed by vacuum evaporation.
In the above organic light emitting diode display, the central portion is a rectangular parallelepiped, the peripheral portion is a wrap-around portion having the third opening on a side surface thereof, heights of the central portion and the peripheral portion in a direction perpendicular to the substrate are both H, a width of a gap between the peripheral portion and the central portion in a direction parallel to the substrate is D, a deposition angle at which the organic functional layer is formed is a, a deposition angle at which the cathode is formed is b, and the height H, the width D, the deposition angle a, and the deposition angle b satisfy the following formulas:
tanb<D/H<tana；
the value range of the evaporation angle a is greater than or equal to 0 degree and smaller than 90 degrees, the value range of the evaporation angle b is greater than 0 degree and smaller than the evaporation angle a, and the value ranges of the height H and the height D are both greater than 0.
In the above organic light emitting diode display, the central portion is an inverted trapezoidal portion in a direction in which the anode faces the substrate, the peripheral portion is a wrap-around portion having the third opening on a side surface thereof, the central portion has a height H2 in a direction perpendicular to the substrate, the peripheral portion has a height H3 in the direction perpendicular to the substrate, an edge of one end of the central portion away from the substrate has a vertical distance D1 in a direction parallel to the substrate to an inner wall of the peripheral portion, a deposition angle at which the organic functional layer is formed is D, and a deposition angle at which the cathode is formed is c, and the height H2, the height H3, the vertical distance D1, the deposition angle c, and the deposition angle D satisfy the following formulas:
tanc<D1/(H3-H2)<tand；
the value range of the evaporation angle D is greater than or equal to 0 degree and less than 90 degrees, the value range of the evaporation angle c is greater than 0 degree and less than the evaporation angle D, the value range of the height H2 is greater than 0, the value range of the height H3 is greater than the height H2, and the value range of the vertical distance D1 is greater than 0.
In the above organic light emitting diode display, a vertical projection area of an end of the peripheral portion close to the substrate on the substrate is smaller than or equal to a vertical projection area of an end of the peripheral portion far from the substrate on the substrate.
In the above organic light emitting diode display, a vertical projection area of an end of the peripheral portion close to the substrate on the substrate is smaller than a vertical projection area of an end of the peripheral portion far from the substrate on the substrate.
In the above organic light emitting diode display, the organic functional layer is at least one of an organic light emitting layer, an electron transport layer, and an electron injection layer.
In the above organic light emitting diode display, the auxiliary electrode includes an input electrode and a connection electrode, the connection electrode and the anode are disposed on the same layer, the input electrode is formed on the substrate, and the connection electrode is connected to the input electrode through the via hole on the planarization layer.
Has the advantages that: the application provides an organic light-emitting diode display, which is characterized in that a contact hole is formed in a cathode isolation column, a cathode is formed on an auxiliary electrode in the contact hole, the cathode in the contact hole is electrically connected with the auxiliary electrode, and the cathode in the contact hole is connected with a cathode outside the cathode isolation column through a third opening on the side surface of the cathode isolation column, so that the problem of resistance voltage drop of the cathode in a large-size display panel is solved, and the problem that the brightness of the large-size top-emitting display panel is influenced due to large resistance voltage drop of the cathode is solved.
Drawings
FIG. 1 is a schematic diagram of a first structure of an OLED display according to an embodiment of the present disclosure;
FIG. 2 is a top view of an input electrode in the OLED display of FIG. 1;
FIG. 3 is a top view of a cathode spacer in the OLED display of FIG. 1;
FIG. 4 is a schematic view of a cathode formed in a contact hole of the cathode spacer in FIG. 1 without forming an organic functional layer;
FIG. 5 is a diagram illustrating a second structure of an OLED display according to an embodiment of the present application;
FIG. 6 is a top view of a cathode spacer in the OLED display of FIG. 5;
fig. 7 is a schematic view of forming a cathode in a contact hole of the cathode spacer in fig. 5 without forming an organic functional layer.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Please refer to fig. 1, which is a first structural diagram of an organic light emitting diode display according to an embodiment of the present disclosure. The organic light emitting diode display includes a substrate 10, an auxiliary electrode, a planarization layer 11, an anode 121, a pixel defining layer 13, a cathode separator, an organic functional layer 15, and a cathode 16.
The substrate is a thin film transistor array substrate, the thin film transistor array substrate includes a substrate 100 and a thin film transistor layer formed on the substrate 100, and the thin film transistor layer includes a plurality of thin film transistors arranged in array on the substrate 100. The thin film transistor is a top gate type thin film transistor. In other structural diagrams, the thin film transistor can also be a bottom gate thin film transistor. In order to avoid that the active layer in the top gate thin film transistor generates carriers due to the influence of backlight to influence the electrical performance of the thin film transistor, a light shielding layer 101 is disposed between the thin film transistor layer and the substrate 100. In order to avoid impurity ions in the substrate 100 from entering the thin film transistor to affect the electrical performance of the thin film transistor, a buffer layer 102 is disposed between the thin film transistor layer and the substrate 100, and the buffer layer 102 covers the light shielding layer 101. The top gate type thin film transistor includes an active layer 103 formed on a buffer layer 102 at a side away from a substrate 100, a gate insulating layer 104 formed on the active layer 103 at a side away from the substrate 100, a gate electrode 105 formed on the gate insulating layer 104 at a side away from the substrate 100, an interlayer insulating layer 106 formed on the buffer layer 102 at a side away from the substrate 100 and covering the active layer 103 and the gate electrode 105, and source and drain electrodes (1071, 1072) formed on the interlayer insulating layer 106 and contacting the active layer 103 through a via hole on the interlayer insulating layer 106, the source and drain electrodes (1071, 1072) being located at opposite sides of the gate electrode 105. The thin film transistor array substrate further comprises a passivation layer 108 covering the thin film transistor layer, wherein the passivation layer 108 is used for preventing ions in the organic layer from entering the thin film transistor layer to influence the electrical performance of the thin film transistor.
The planarization layer 11 serves to planarize the surface of the thin film transistor array substrate. The planarization layer 11 is formed on the passivation layer 108. The planarization layer 11 is an organic material. The thickness of the planarization layer 11 is 20000 to 35000 angstroms.
The auxiliary electrode includes an input electrode 1073 and a connection electrode 122, the connection electrode 122 and the anode 121 are disposed on the same layer, the input electrode 1073 is formed on the substrate 10, and the connection electrode 122 and the input electrode 1073 are connected through a via hole in the planarization layer 11. The input electrode 1073 is used to input an electrical signal, the electrical signal of the input electrode 1073 originating from a power supply input terminal of a power supply Voltage (VSS), to the cathode 16 through the connecting electrode 122. The input electrode 1073 may be provided on the same layer as the source/drain electrodes (1071, 1072) of the thin film transistor, on the same layer as the light-shielding layer 101, or on the same layer as the gate electrode 105 in the bottom-gate thin film transistor. As shown in fig. 2, which is a plan view of the input electrode 1073 in the organic light emitting diode display shown in fig. 1, when the substrate has a rectangular shape, the input electrode 1073 is arranged along the longitudinal direction of the substrate 100. In other schematic structural diagrams, the input electrodes 1073 may be arranged in the width direction of the substrate 100, or may be arranged in both the length direction and the width 100 direction of the substrate 100 to form a mesh structure. The connection electrode 122 and the anode 121 are formed by the same process.
The anode 121 is a reflective electrode. The anode 121 is formed on the planarization layer 11 and electrically connected to the drain electrode 1072 through a via hole on the planarization layer 11, and the thin film transistor controls the input of an electrical signal to the anode 121. The anode 121 inputs holes into the organic light emitting layer on one hand, and reflects light emitted from the organic light emitting layer to the light emitting direction on the other hand, and the material for preparing the same includes, but is not limited to, aluminum, silver, or an alloy thereof.
The pixel defining layer 13 is formed on the planarization layer 11, the auxiliary electrode and the anode 121 and has a first opening 131 and a second opening 132, the first opening 131 is disposed above the anode 121, and the second opening 132 is disposed above the auxiliary electrode. The first opening 131 partially exposes the anode 121 to define a light emitting region of the substrate 10, and the second opening 132 partially exposes the auxiliary electrode. The preparation material of the pixel defining layer 13 is any one of photoresist, polyimide, polymethyl methacrylate and phenolic resin, and the thickness of the pixel defining layer 13 is 1 micron-2 microns.
Referring to fig. 1 and fig. 3, fig. 3 is a top view of a cathode isolated pillar in the organic light emitting diode display shown in fig. 1. The cathode separator includes a central portion 142 and a peripheral portion 141 surrounding the central portion 142, the side of the peripheral portion 141 has a third opening 141a, a contact hole 143 is formed in a gap between the peripheral portion 141 and the central portion 142, and the third opening 141a may have a rectangular shape, a trapezoidal shape, a regular pattern, an irregular pattern, and the like. The central portion 142 is located at the center of the peripheral portion 141. The cathode isolation column is located on the auxiliary electrode in the second opening 132, the cathode isolation column has a contact hole 143 and a third opening 141a, the third opening 141a is located on the side surface of the cathode isolation column, and the cathode 16 in the contact hole 143 is electrically connected to the cathode 16 on the organic functional layer 15 outside the cathode isolation column in the second opening 132 through the third opening 141a, so that an electrical signal input by the auxiliary electrode is input to the cathode 16.
The organic functional layer 15 is formed on the pixel defining layer 13, on the cathode spacer, and on the anode 121 in the first opening 131, and is also formed on the auxiliary electrode at the periphery of the cathode spacer in the second opening 132. The organic functional layer 15 is formed by vacuum evaporation. The organic functional layer 15 is at least one of an organic light emitting layer, an electron transport layer, and an electron injection layer.
The cathode 16 is formed on the organic functional layer 15 and on the auxiliary electrode in the contact hole 143. The cathode 16 is a transparent electrode or a semitransparent electrode. The transparent electrode and the semitransparent electrode are prepared from indium tin oxide, indium zinc oxide and the like. The cathode 16 is formed by vacuum evaporation.
Referring to fig. 1, 3 and 4, fig. 4 is a schematic view illustrating that a cathode is formed in a contact hole of a cathode isolation pillar in fig. 1 without forming an organic functional layer. The central portion 142 is a rectangular parallelepiped, the peripheral portion 141 is a wrap-around portion having a third opening 141a on a side surface thereof, and a vertical projection area of an end of the peripheral portion 141 close to the substrate 10 on the substrate 10 is equal to a vertical projection area of an end of the peripheral portion 141 away from the substrate 10 on the substrate 10. The heights of the central portion 142 and the peripheral portion 141 in the direction perpendicular to the substrate 10 are both H, the width of the gap between the peripheral portion 141 and the central portion 142 in the direction parallel to the substrate 10 is D, the deposition angle at which the organic functional layer 15 is formed is a, the deposition angle at which the cathode 16 is formed is b, and the height H, the width D, the deposition angle a, and the deposition angle b satisfy the following formulas:
tanb<D/H<tana；
the value range of the evaporation angle a is greater than or equal to 0 degree and smaller than 90 degrees, the value range of the evaporation angle b is greater than 0 degree and smaller than the evaporation angle a, and the value ranges of the height H and the width D are both greater than 0.
Because D/H is larger than tan b, when the evaporation angle of the formed cathode is b, the cathode 16 can be formed in the contact hole 143 by matching with the cathode separation column structure of the structural schematic diagram; D/H is smaller than tan, so that the organic functional layer 15 cannot be formed in the contact hole 143 of the cathode separator in the present structural schematic view when the deposition angle of the organic functional layer 15 is a.
And the organic functional layer is not formed on the auxiliary electrode in the contact hole so as to avoid the situation that the auxiliary electrode in the contact hole is covered by the organic functional layer to cause that the cathode cannot be contacted with the cathode in the contact hole.
Please refer to fig. 5, which is a second structural diagram of an organic light emitting diode display according to an embodiment of the present application, and is substantially similar to the organic light emitting diode display shown in fig. 1, except that the cathode isolation pillars in fig. 5 are different from the cathode isolation pillars in fig. 1.
Referring to fig. 5, 6 and 7, fig. 6 is a top view of a cathode isolation pillar in the organic light emitting diode display shown in fig. 5, and fig. 7 is a schematic view illustrating that a cathode is formed in a contact hole of the cathode isolation pillar in fig. 5 without forming an organic functional layer. The central portion 142 is an inverted trapezoid portion in the direction in which the anode 121 points to the substrate 10, the peripheral portion 141 is a wrap-around portion having a third opening 141a on a side surface thereof, the height of the central portion 142 in the direction perpendicular to the substrate 10 is H2, the height of the peripheral portion 141 in the direction perpendicular to the substrate 10 is H3, the vertical distance from the edge of the end of the central portion 142 away from the substrate 10 to the inner wall of the peripheral portion 141 in the direction parallel to the substrate 10 is D1, the deposition angle at which the cathode 16 is formed is c, the deposition angle at which the organic functional layer 15 is formed is D, and the height H2, the height H3, the vertical distance D1, the deposition angle c, and the deposition angle D satisfy the following equations:
tanc<D1/(H3-H2)<tand；
the value range of the evaporation angle D is greater than or equal to 0 degree and smaller than 90 degrees, the value range of the evaporation angle c is greater than 0 degree and smaller than the evaporation angle D, the value range of the height H2 is greater than 0, the value range of the height H3 is greater than the height H2, and the value range of the vertical distance D1 is greater than 0.
Since D1/(H3-H2) is larger than tan c, when the evaporation angle of the formed cathode is c, the cathode 16 can be formed in the contact hole 143 by matching with the cathode separation column structure of the structural schematic diagram; D1/(H3-H2) is smaller than tan, so that the deposition angle D of the organic functional layer 15 cannot form the organic functional layer 15 in the contact hole 143 of the cathode separation column in the structural schematic view.
The peripheral portion is shaped as an inverted trapezoid and has a surrounding portion with an opening 141a on one side, and a vertical projection area of an end of the peripheral portion 141 close to the substrate 10 on the substrate 10 is smaller than a vertical projection area of an end of the peripheral portion 141 far from the substrate 10 on the substrate 10, so that the cathode 16 can be formed on the auxiliary electrode in the second opening 132 and outside the contact hole 143, to further increase a contact area between the cathode and the auxiliary electrode and further improve a problem that the cathode has a resistance drop in a large-sized display panel.
According to the organic light emitting diode display, the contact hole is formed in the cathode isolation column, the cathode in the contact hole is formed on the auxiliary electrode, the cathode in the contact hole is electrically connected with the auxiliary electrode, and the cathode in the contact hole is connected with the cathode outside the cathode isolation column through the third opening in the side face of the cathode isolation column, so that the problem of resistance voltage drop of the cathode in a large-size display panel is solved, and the problem that the brightness of the large-size top-emitting display panel is influenced due to the fact that the resistance voltage drop of the cathode is large is solved.
The above description of the embodiments is only for assisting understanding of the technical solutions and the core ideas thereof; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.
Claims (9)
1. An organic light emitting diode display, comprising:
a substrate;
an auxiliary electrode formed on the substrate;
a planarization layer formed on the substrate;
an anode formed on the planarization layer;
a pixel defining layer formed on the planarization layer, the auxiliary electrode, and the anode and having a first opening and a second opening, the first opening being disposed over the anode, the second opening being disposed over the auxiliary electrode;
a cathode isolation pillar formed on the auxiliary electrode in the second opening, the cathode isolation pillar having a contact hole and a third opening, the third opening being located at a side surface of the cathode isolation pillar, the cathode isolation pillar including a central portion and a peripheral portion surrounding the central portion, the side surface of the peripheral portion having the third opening, a gap between the peripheral portion and the central portion forming the contact hole;
an organic functional layer formed on the pixel defining layer, the cathode isolation pillar, and the anode in the first opening;
and the cathode is formed on the organic functional layer and the auxiliary electrode positioned in the contact hole.
2. The organic light-emitting diode display according to claim 1, wherein the central portion is located at a central position of the peripheral portion.
3. The organic light-emitting diode display according to claim 2, wherein the organic functional layer and the cathode are formed by vacuum evaporation.
4. The organic light-emitting diode display according to claim 3, wherein the central portion is a rectangular parallelepiped, the peripheral portion is a wrap-around portion having the third opening on a side surface thereof, heights of the central portion and the peripheral portion in a direction perpendicular to the substrate are both H, a width of a gap between the peripheral portion and the central portion in a direction parallel to the substrate is D, a deposition angle at which the organic functional layer is formed is a, a deposition angle at which the cathode is formed is b, and the height H, the width D, the deposition angle a, and the deposition angle b satisfy the following formulas:
tanb<D/H<tana；
the value range of the evaporation angle a is greater than or equal to 0 degree and smaller than 90 degrees, the value range of the evaporation angle b is greater than 0 degree and smaller than the evaporation angle a, and the value ranges of the height H and the width D are both greater than 0.
5. The organic light-emitting diode display according to claim 3, wherein the central portion is an inverted trapezoidal portion in a direction in which the anode is directed to the substrate, the peripheral portion is a loop-shaped loop portion having the third opening on a side surface thereof, the central portion has a height H2 in a direction perpendicular to the substrate, the peripheral portion has a height H3 in the direction perpendicular to the substrate, an edge of one end of the central portion away from the substrate has a vertical distance D1 in a direction parallel to the substrate to an inner wall of the peripheral portion, an evaporation angle at which the organic functional layer is formed is D, an evaporation angle at which the cathode is formed is c, and the height H2, the height H3, the vertical distance D1, the evaporation angle c, and the evaporation angle D satisfy the following equations:
tanc<D1/(H3-H2)<tand；
the value range of the evaporation angle D is greater than or equal to 0 degree and less than 90 degrees, the value range of the evaporation angle c is greater than 0 degree and less than the evaporation angle D, the value range of the height H2 is greater than 0, the value range of the height H3 is greater than the height H2, and the value range of the vertical distance D1 is greater than 0.
6. The organic light-emitting diode display according to any one of claims 1 to 5, wherein a perpendicular projection area on the substrate of an end of the peripheral portion close to the substrate is smaller than or equal to a perpendicular projection area on the substrate of an end of the peripheral portion far from the substrate.
7. The organic light-emitting diode display defined in claim 6 wherein the area of the perpendicular projection on the substrate of the end of the periphery near the substrate is less than the area of the perpendicular projection on the substrate of the end of the periphery away from the substrate.
8. The organic light-emitting diode display according to claim 1, wherein the organic functional layer is at least one of an organic light-emitting layer, an electron transport layer, and an electron injection layer.
9. The organic light-emitting diode display defined in claim 1 wherein the auxiliary electrodes include input electrodes and connection electrodes, the connection electrodes being disposed on the same layer as the anode, the input electrodes being formed on the substrate, the connection electrodes being connected to the input electrodes through vias in the planarization layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910548765.1A CN110176483B (en) | 2019-06-24 | 2019-06-24 | Organic light emitting diode display |
| PCT/CN2019/104607 WO2020258519A1 (en) | 2019-06-24 | 2019-09-06 | Organic light-emitting diode display |
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| CN201910548765.1A CN110176483B (en) | 2019-06-24 | 2019-06-24 | Organic light emitting diode display |
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| CN110176483B (en) * | 2019-06-24 | 2020-10-27 | 深圳市华星光电半导体显示技术有限公司 | Organic light emitting diode display |
| CN111403452A (en) | 2020-03-26 | 2020-07-10 | 武汉华星光电半导体显示技术有限公司 | Display panel, display module and electronic device |
| CN112331801B (en) * | 2020-10-30 | 2023-11-28 | 合肥鑫晟光电科技有限公司 | Display panel, preparation method thereof and display device |
| CN113097257A (en) * | 2021-03-22 | 2021-07-09 | 深圳市华星光电半导体显示技术有限公司 | Display panel |
| WO2022222078A1 (en) * | 2021-04-21 | 2022-10-27 | 京东方科技集团股份有限公司 | Display substrate and manufacturing method therefor, and display apparatus |
| CN113345945B (en) * | 2021-05-31 | 2022-12-23 | 深圳市华星光电半导体显示技术有限公司 | Display panel, manufacturing method thereof and display device |
| CN113471384A (en) * | 2021-06-29 | 2021-10-01 | 京东方科技集团股份有限公司 | Display panel, preparation method thereof and display device |
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| CN114220833B (en) * | 2021-12-13 | 2023-07-04 | 武汉华星光电半导体显示技术有限公司 | Display panel |
| CN117529977A (en) * | 2022-06-02 | 2024-02-06 | 京东方科技集团股份有限公司 | Display panel, manufacturing method thereof and display device |
| CN115988900A (en) * | 2022-12-28 | 2023-04-18 | 深圳市华星光电半导体显示技术有限公司 | Display panel, preparation method thereof and display device |
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| CN110176483A (en) | 2019-08-27 |
| WO2020258519A1 (en) | 2020-12-30 |
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