CN109244269A - Display panel and its manufacturing method, display device - Google Patents
Display panel and its manufacturing method, display device Download PDFInfo
- Publication number
- CN109244269A CN109244269A CN201811095876.3A CN201811095876A CN109244269A CN 109244269 A CN109244269 A CN 109244269A CN 201811095876 A CN201811095876 A CN 201811095876A CN 109244269 A CN109244269 A CN 109244269A
- Authority
- CN
- China
- Prior art keywords
- layer
- auxiliary cathode
- underlay substrate
- cathode layer
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a kind of display panel and its manufacturing methods, display device, belong to field of display technology.The display panel includes: the auxiliary cathode layer and anode layer being arranged on underlay substrate, and, the luminescent layer and cathode layer being stacked on the underlay substrate for being provided with the anode layer, the anode layer and the auxiliary cathode layer insulate；The auxiliary cathode layer includes at least one auxiliary cathode structure, is provided at least one groove on each surface of the auxiliary cathode structure far from the underlay substrate, the cathode layer is contacted with the auxiliary cathode layer in the groove.Invention increases the contacts area of auxiliary cathode and cathode layer, reduce the parallel resistance of auxiliary cathode structure and cathode layer, have achieved the effect that the resistance for reducing cathode construction, the display effect of display panel is effectively guaranteed.The present invention is for showing image.
Description
Technical field
The present invention relates to field of display technology, in particular to a kind of display panel and its manufacturing method, display device.
Background technique
Organic Light Emitting Diode (English: Organic Light-emitting Diode；Abbreviation: OLED) display panel can
To include anode, pixel defining layer, organic luminous layer and cathode etc..Wherein it is possible to pass through the electricity formed between cathode and anode
The brightness of pressure difference control organic luminous layer.But when the resistance of cathode is larger, influence of the cathode to the voltage difference is significant,
The display of display panel is caused brightness step occur.
In the related technology, the function of original cathode can be replaced by setting cathode construction, which includes:
Cathode and auxiliary cathode in parallel, and the auxiliary cathode is made of metal.The resistance of the cathode construction is cathode and auxiliary cathode
Parallel resistance, and the parallel resistance be less than original cathode resistance.
But in order to guarantee the aperture opening ratio of pixel unit in display panel, the area of auxiliary cathode is usually smaller, leads to yin
The parallel resistance of pole and auxiliary cathode is still larger, and the display effect of display panel still will receive influence.
Summary of the invention
The embodiment of the invention provides a kind of display panel and its manufacturing methods, display device, can solve the relevant technologies
The problem of parallel resistance of middle cathode and auxiliary cathode is larger, and the display effect of display panel will receive influence.The technical side
Case is as follows:
In a first aspect, providing a kind of display panel, comprising:
Auxiliary cathode layer and anode layer on underlay substrate are set, and, in the substrate base for being provided with the anode layer
The luminescent layer and cathode layer being stacked on plate, the anode layer and the auxiliary cathode layer insulate；
The auxiliary cathode layer includes at least one auxiliary cathode structure, and each auxiliary cathode structure is far from the lining
At least one groove is provided on the surface of substrate, the cathode layer is contacted with the auxiliary cathode layer in the groove.
Optionally, each groove in the auxiliary cathode structure is through slot.
Optionally, orthographic projection of the luminescent layer on the underlay substrate and the auxiliary cathode layer are in the substrate base
Orthographic projection on plate is not overlapped.
Optionally, the cathode layer fills each groove.
Optionally, the display panel includes multiple pixel units of array arrangement, and each pixel unit includes aobvious
Show region and non-display area, the auxiliary cathode structure is located in the non-display area.
Optionally, the display panel includes multiple pixel unit groups, and each pixel unit group includes at least one pixel
Unit, the cathode in each pixel unit group are connect with the same auxiliary cathode structure.
Optionally, each pixel unit group includes the cathode in four pixel units, with four pixel units
The auxiliary cathode structure of connection is located at the geometric center of four pixel unit regions.
Optionally, the display panel further include: the source-drain electrode figure on the underlay substrate, the auxiliary yin are set
Pole layer on the underlay substrate orthographic projection and orthographic projection of the source-drain electrode figure on the underlay substrate it is not be overlapped；
The source-drain electrode figure is between the underlay substrate and the auxiliary cathode layer, alternatively, the source and drain pole figure
Shape and the auxiliary cathode layer same layer are arranged.
Second aspect provides a kind of manufacturing method of display panel, which comprises
One underlay substrate is provided；
Auxiliary cathode layer is formed on the underlay substrate and anode layer, the auxiliary cathode layer include at least one auxiliary
Cathode construction is formed at least one groove on each surface of the auxiliary cathode structure far from the underlay substrate, described
Anode layer and the auxiliary cathode layer insulate；
Luminescent layer is formed on the underlay substrate for being formed with the anode layer；
Form cathode layer on the underlay substrate for being formed with the luminescent layer, the cathode layer in the groove with it is described
The contact of auxiliary cathode layer.
The third aspect, provides a kind of display device, and the display device includes any of the above-described display panel.
Display panel provided in an embodiment of the present invention, by being arranged on surface of the auxiliary cathode structure far from underlay substrate
At least one groove, cathode layer is contacted in groove with auxiliary cathode structure, compared to the relevant technologies, is increased
The contact area of auxiliary cathode layer and cathode layer, reduces the contact resistance of cathode layer Yu auxiliary cathode layer, and then reduces yin
The parallel resistance of pole layer and auxiliary cathode layer has achieved the effect that the resistance for reducing cathode construction, display surface is effectively guaranteed
The display effect of plate.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of display panel provided in an embodiment of the present invention；
Fig. 2 is the structural schematic diagram of another display panel provided in an embodiment of the present invention；
Fig. 3 is the structural schematic diagram of another display panel provided in an embodiment of the present invention；
Fig. 4 is the structural schematic diagram of another display panel provided in an embodiment of the present invention；
Fig. 5 is a kind of schematic diagram of orthographic projection of the auxiliary cathode structure provided in an embodiment of the present invention on underlay substrate；
Fig. 6 is the signal of orthographic projection of another auxiliary cathode structure provided in an embodiment of the present invention on underlay substrate
Figure；
Fig. 7 is a kind of distribution schematic diagram of multiple auxiliary cathode structures provided in an embodiment of the present invention on a display panel；
Fig. 8 is the distribution signal of the multiple auxiliary cathode structures of another kind provided in an embodiment of the present invention on a display panel
Figure；
Fig. 9 is the structural schematic diagram of another display panel provided in an embodiment of the present invention；
Figure 10 is a kind of flow chart of the manufacturing method of display panel provided in an embodiment of the present invention；
Figure 11 is the flow chart of the manufacturing method of another display panel provided in an embodiment of the present invention；
Figure 12 is a kind of structural schematic diagram formed after active layer on underlay substrate provided in an embodiment of the present invention；
Figure 13 is provided in an embodiment of the present invention a kind of the first gate insulation to be formed on the underlay substrate for be formed with active layer
Structural schematic diagram after layer, grid and the second gate insulation layer；
Figure 14 is provided in an embodiment of the present invention a kind of to form source and drain on the underlay substrate for being formed with the second gate insulation layer
Structural schematic diagram after pole figure shape；
Figure 15 is that a kind of formed on the underlay substrate for be formed with thin film transistor (TFT) provided in an embodiment of the present invention assists yin
Structural schematic diagram after pole layer and anode layer；
Figure 16 is that another kind provided in an embodiment of the present invention forms auxiliary on the underlay substrate for be formed with thin film transistor (TFT)
Structural schematic diagram after cathode layer and anode layer；
Figure 17 be it is provided in an embodiment of the present invention it is a kind of on the underlay substrate for be formed with luminescent layer formed cathode layer after
Structural schematic diagram；
Figure 18 is after another kind provided in an embodiment of the present invention forms cathode layer on the underlay substrate for be formed with luminescent layer
Structural schematic diagram.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
In recent years, it since flexible OLED display panel has many advantages, such as higher color saturation degree and flexible deformable, answers
With more and more extensive.With the increase of display panel screen, the area of pixel unit is increased accordingly on display panel.And by cathode
Resistance caused by current potential decline tend to be significant, cause the voltage difference between anode and cathode to reduce, and then lead to display panel
Occurs brightness step in display area.For example, for top emission type display panel, in order to guarantee positioned at light emission side electrode (i.e.
Cathode) transmitance, and since the electrode is usually made of magnesium silver alloy, it will usually electrode are made thin, lead to electrode
Resistance is larger.
In the related technology, the function of original cathode is replaced by setting cathode construction, which includes: parallel connection
Cathode and auxiliary cathode, and the auxiliary cathode is made of metal.The resistance of the cathode construction be cathode and auxiliary cathode and
Join resistance, and the parallel resistance is less than the resistance of original cathode.Since the resistance of the cathode construction is less than original cathode
Resistance so that the current potential decline degree of cathode construction reduces, and then reduces the reduction of the interstructural voltage difference of anode and cathode
, can be to avoid there is brightness step in the display area of display panel in degree.Wherein, the set-up mode of the cathode construction are as follows: should
Auxiliary cathode is arranged in the non-display area of pixel unit, which is arranged in the display area of pixel unit, the formation
Having and is formed with luminescent layer on the underlay substrate of auxiliary cathode, the thickness of the luminescent layer is less than the thickness of the auxiliary cathode, and due to
Film layer segment difference is formd in the auxiliary cathode in non-display area, so that the luminescent layer disconnects at the auxiliary cathode, accordingly
, when this is formed with and forms cathode on the underlay substrate of luminescent layer, cathode can be contacted in the gap with auxiliary cathode.It can
Selection of land, the pixel unit may include red sub-pixel elements, green sub-pixel unit and blue sub-pixel unit.
But since auxiliary cathode is far from luminescent layer is covered on the surface of underlay substrate, so that cathode is only capable of and assists
The side wall of cathode contacts, and causes effective electrical-contact area of cathode and auxiliary cathode smaller, so that cathode and auxiliary cathode connect
Electric shock resistance is larger, and then causes the resistance of cathode construction still larger.If also, the area by increasing auxiliary cathode reduces cathode
The resistance of structure, the auxiliary cathode after the increase will affect the aperture opening ratio of pixel unit so that the display effect of display panel by
To influence.
For this purpose, the embodiment of the invention provides a kind of display panels, as shown in Figure 1, the display panel may include: setting
Auxiliary cathode layer 102 and anode layer 103 on underlay substrate 101, and, in the underlay substrate 101 for being provided with anode layer 103
On the luminescent layer 104 and cathode layer 105 that are stacked.The anode layer 103 and the auxiliary cathode layer 102 insulate.Optionally, this is auxiliary
Help cathode layer 102 can not with the orthographic projection of the anode layer 103 on underlay substrate 101 in the orthographic projection on underlay substrate 101
Overlapping, so that can guarantee the anode layer 103 it is not necessary that insulating layer is arranged between auxiliary cathode layer 102 and anode layer 103 and be somebody's turn to do
Auxiliary cathode layer 102 insulate.Wherein, luminescent layer 104 may include hole transmission layer HTL, hole injection layer HIL, electron-transport
Layer ETL, electron injecting layer EIL, hole blocking layer HBL, electronic barrier layer EBL and luminous material layer.
The auxiliary cathode layer 102 includes at least one auxiliary cathode structure 1021, and each auxiliary cathode structure 1021 is separate
At least one groove is provided on the surface of underlay substrate 101, and (Fig. 1 is with the auxiliary cathode structure 1021 far from underlay substrate 101
Surface on setting there are four illustrated for groove), cathode layer 105 contacts in groove with auxiliary cathode layer 102.The yin
Pole layer 105 and the auxiliary cathode layer 102 constitute cathode construction.And the auxiliary cathode layer 102 can be by metal molybdenum (Mo), metal
Copper (Cu), metallic aluminium (Al) or its alloy material etc. are made.
In conclusion display panel provided in an embodiment of the present invention, by auxiliary cathode structure far from underlay substrate
At least one groove being arranged on surface, enables cathode layer to contact in groove with auxiliary cathode structure, compared to correlation
Technology increases the contact area of auxiliary cathode layer and cathode layer, reduces the contact resistance of cathode layer Yu auxiliary cathode layer, into
And the parallel resistance of cathode layer Yu auxiliary cathode layer is reduced, and achieve the effect that the resistance for reducing cathode construction, it is effective to protect
The display effect of display panel is demonstrate,proved.
Wherein, the implementation that cathode layer 105 contacts in groove with auxiliary cathode layer 102 at least may include following several
The achievable mode of kind:
Can be in realization mode at the first, cathode layer 105 and luminescent layer 104 can fill each groove.In display panel
Manufacturing process in, cathode layer 105 is re-formed due to needing to be initially formed luminescent layer 104, so that can be laminated ground in each groove
Filled with luminescent layer 104 and cathode layer 105, so that luminescent layer 104 and cathode layer 105 are contacted with the side wall of each groove.Fig. 1 is
The cathode layer 105 and luminescent layer 104 fill the schematic diagram of each groove.
For example, luminescent layer 104 can be flood structure, and the groove depth of the groove can be greater than the thickness of luminescent layer 104.When
When auxiliary cathode structure 1021 is arranged fluted on the surface far from underlay substrate 101, during forming luminescent layer 104,
It will form the material for being used to form luminescent layer 104 in groove.When the groove depth of groove is greater than the thickness of luminescent layer 104, in shape
It, can be filled with the material for being used to form cathode layer 105, so that cathode layer 105 is in groove in groove during at cathode layer 105
It is interior to be contacted with auxiliary cathode structure 1021, and then cathode layer 105 and luminescent layer 104 is made to fill each groove.Optionally, the groove
Groove depth where direction and luminescent layer 104 thickness where direction can be each perpendicular to the surface of underlay substrate 101, so as to
In luminescent layer 104 and cathode layer 105 can be formed in a groove.
In second of achievable mode, cathode layer 105 can fill each groove, the cathode layer 105 and each groove
Side wall contact.Fig. 2 is that the cathode layer fills the schematic diagram of each groove, as shown in Fig. 2, being simply formed with cathode layer in each groove
105.When being simply formed with cathode layer 105 in groove, the side wall of each groove can be made to contact completely with cathode layer 105, effectively
Ground increases the contact area of auxiliary cathode layer 102 Yu cathode layer 105.
For example, baffle can be arranged in the top surface of groove, so that forming luminescent layer 104 before forming luminescent layer 104
During, the material for being used to form luminescent layer 104 can not be formed in a groove, and removal should before forming cathode layer 105
Baffle, so that the material for being used to form the cathode layer 105 is formed in the groove, so as to be simply formed with cathode layer 105 in groove.
Alternatively, the luminescent layer 104 being formed in the groove can be removed by modes such as patterning processes, so after forming luminescent layer 104
After re-form cathode layer 105 so that being simply formed with cathode layer 105 in groove.
In a kind of achievable mode, as shown in figure 3, the orthographic projection of the luminescent layer 104 on underlay substrate 101 can be with
Orthographic projection of the auxiliary cathode layer 102 on underlay substrate 101 is not overlapped, at this point, cathode layer 105 can not only in groove with it is auxiliary
Cathode layer 102 is helped to contact, which can also be on surface of the auxiliary cathode layer 102 far from underlay substrate 101 and the auxiliary
Cathode layer 102 contacts.Since in this way, the contact area of cathode layer 105 Yu auxiliary cathode layer 102 can be further increased.
It illustratively, can be in table of the auxiliary cathode structure 1021 far from underlay substrate 101 before forming luminescent layer 104
Baffle is set on face so that be not formed on surface of the auxiliary cathode structure 1021 far from underlay substrate 101 be used to form it is luminous
The material of layer 104.Alternatively, can be removed by modes such as patterning processes after forming luminescent layer 104 and be formed in auxiliary cathode knot
Luminescent layer on surface of the structure 1021 far from underlay substrate 101, so that table of the auxiliary cathode structure 1021 far from underlay substrate 101
Luminescent layer 104 is not formed on face.When luminescent layer is not formed on surface of the auxiliary cathode structure 1021 far from underlay substrate 101
When 104, when forming cathode layer 105 on the underlay substrate 101 for be formed with luminescent layer 104, the auxiliary cathode structure 1021 is separate
The surface of underlay substrate 101 could be formed with the material for being used to form the cathode layer 105, so that the cathode layer 105 can not only
It is contacted in groove with auxiliary cathode layer 102, additionally it is possible to auxiliary with this on surface of the auxiliary cathode layer 102 far from underlay substrate 101
Cathode layer 102 is helped to contact.
Optionally, the set-up mode of auxiliary cathode layer 102 and anode layer 103 can there are many, such as: auxiliary cathode layer
102 can be arranged with 103 same layer of anode layer.Alternatively, anode layer 103 can be set in auxiliary cathode layer 102 far from underlay substrate
101 side can be initially formed auxiliary cathode layer 102 that is, when manufacturing display panel, then be formed with auxiliary cathode layer
Anode layer 103 is formed on 102 underlay substrate 101.Alternatively, auxiliary cathode layer 102 can be set in anode layer 103 far from substrate
The side of substrate 101 can be initially formed anode layer 103 that is, when manufacturing display panel, then be formed with anode layer 103
Auxiliary cathode layer 102 is formed on underlay substrate 101.
When auxiliary cathode layer 102 and 103 same layer of anode layer are arranged, the auxiliary cathode layer 102 and anode layer 103 can be
It is formed in patterning processes, to simplify the manufacturing process and manufacturing cost of display panel.
Also, at least one groove in the auxiliary cathode structure 1021 can be through slot.It illustratively, as shown in figure 4, should
Each groove in auxiliary cathode structure 1021 can be through slot.In the case where the thickness of luminescent layer 104 is constant, when the groove
Groove depth it is bigger when, cathode layer 105 is bigger with 1021 contact area of auxiliary cathode structure in groove, correspondingly, auxiliary cathode
Layer 102 is bigger with total contact area of cathode layer 105.It therefore, can be compared with when the groove of auxiliary cathode structure 1021 is through slot
Increase the contact area of auxiliary cathode layer 102 Yu cathode layer 105, big degree to reduce auxiliary cathode layer 102 and cathode layer 105
Parallel resistance, and then effectively reduce the resistance of cathode construction.
Also, when the number of recesses being arranged on surface of the auxiliary cathode structure 1021 far from underlay substrate 101 is more, yin
Pole layer 105 is bigger with 1021 contact area of auxiliary cathode structure in groove, correspondingly, auxiliary cathode layer 102 and cathode layer 105
Total contact area it is bigger, the parallel resistance of cathode layer 105 Yu auxiliary cathode layer 102 can be further decreased.
Optionally, when the groove is through slot, positive throwing of the groove of the auxiliary cathode structure 1021 on underlay substrate 101
Shadow can be in a ring.Optionally, which can be circular ring shape or side's annular.Also, each auxiliary cathode structure 1021
Global shape can be column.The column can be cylinder or prism.When the global shape of auxiliary cathode structure 1021 is column
When, it is ensured that the stability of auxiliary cathode structure 1021.Also, when the global shape of the auxiliary cathode structure 1021 is cylinder
When, poor contact caused by the auxiliary cathode structure 1021 can be made to be less prone to because of broken string.When the auxiliary cathode structure
When 1021 global shape is prism, the occupied area of auxiliary cathode structure 1021 can be reduced, and then increase pixel list
The aperture opening ratio of member.
It is exemplary, referring to FIG. 5, it illustrates provided in an embodiment of the present invention a kind of when the groove is through slot, auxiliary
The schematic diagram of orthographic projection B of the cathode construction 1021 on underlay substrate 101.Wherein, shade A indicates groove in substrate base in Fig. 5
Orthographic projection on plate 101.Can be seen that orthographic projection of the groove on underlay substrate 101 by the Fig. 5 is circular ring shape, and in Fig. 5
The global shape of auxiliary cathode structure 1021 is cylinder.
Referring to FIG. 6, it illustrates provided in an embodiment of the present invention another when the groove is through slot, auxiliary cathode knot
The schematic diagram of orthographic projection B of the structure 1021 on underlay substrate 101.Wherein, shade A indicates groove on underlay substrate 101 in Fig. 6
Orthographic projection.It can be seen that orthographic projection of the groove on underlay substrate 101 by the Fig. 6 as side's annular, and assist yin in Fig. 6
The global shape of pole structure 1021 is prism.
Optionally, as shown in Fig. 7 or Fig. 8, display panel may include multiple pixel units of array arrangement, each pixel
Unit has display area and non-display area (to be indicated using hatched rectangular block in the Fig. 7 and Fig. 8 convenient for watching
The display area of each pixel unit, the non-display area of each pixel unit are the neighboring area of its display area, Fig. 7 and figure
The non-display area is indicated using white space in 8), which can be located in non-display area.When auxiliary
It helps cathode construction 1021 to be arranged in non-display area, can effectively guarantee the transmitance of display panel.
Further, as shown in Fig. 7 or Fig. 8, in display panel, multiple pixel unit can be divided into multiple pixels
Unit group.Each pixel unit group includes at least one pixel unit, each pixel unit included by each pixel unit group
In cathode can be connect with the same auxiliary cathode structure 1021.Each pixel unit included by each pixel unit group
In cathode when being connect with the same auxiliary cathode structure 1021, it is possible to reduce auxiliary cathode structure 1021 sets in display panel
Number is set, and then reduces the manufacturing cost of display panel.Exemplary, as shown in Fig. 7 or Fig. 8, each pixel unit group be can wrap
Include four pixel units (four pixel units in each solid box form a pixel unit group).Each pixel unit group
Cathode in four pixel units can be connect with the same auxiliary cathode structure 1021, and with the cathode in four pixel units
The auxiliary cathode structure 1021 of connection is located at the geometric center of four pixel unit regions.
Wherein, all auxiliary cathode structures 1021 can distribute as net shape on display panel, each auxiliary cathode structure
1021 can be considered as a vertex of corresponding grid (for example, the geometric center of each auxiliary cathode structure 1021 can be considered as
One vertex of corresponding grid), the mesh of the grid can be with parallelogram.It is exemplary, referring to FIG. 7, on display panel
All auxiliary cathode structures 1021 distribute as net shape, and the mesh of the grid is in rectangle.Referring to FIG. 8, on display panel
All auxiliary cathode structures 1021 distribute as net shape, and the equal parallelogram of mesh of the grid, in the parallelogram
The angle on two sides of every intersection is less than 90 degree.
Optionally, as shown in figure 9, the display panel can also include: thin film transistor (TFT).When the thin film transistor (TFT) is top-gated
When type thin film transistor (TFT), the thin film transistor (TFT) may include: the active layer being arranged on underlay substrate, the first insulating layer, grid,
Second gate insulation layer and source-drain electrode figure 106 etc..When the thin film transistor (TFT) is bottom gate thin film transistor, the thin film transistor (TFT)
It may include: the grid being arranged on underlay substrate, gate insulation layer, active layer and source-drain electrode figure 106 etc..Wherein, source-drain electrode
Figure 106 can be made of metal molybdenum (Mo), metallic copper (Cu), metallic aluminium (Al) or its alloy material.And auxiliary cathode layer 102
It can be manufactured from the same material with anode 103, source-drain electrode figure 106 and grid.Optionally, which can position
Between underlay substrate 101 and auxiliary cathode layer 102.Alternatively, the source-drain electrode figure 106 can be with 102 same layer of auxiliary cathode layer
Setting.
Auxiliary cathode layer 102 on underlay substrate 101 orthographic projection and source-drain electrode figure 106 on underlay substrate 101
Orthographic projection can not be overlapped.At this point it is possible to avoid anode layer caused by contacting because of auxiliary cathode layer 102 with source-drain electrode figure 106
103 is short-circuit with cathode layer 105.
Optionally, which can be made of the multiple sub- auxiliary cathode layers being superposed.For example, when should
When auxiliary cathode layer 102 is made of two be superposed sub- auxiliary cathode layers, the sub- auxiliary cathode layer close to underlay substrate can
To be arranged with 106 same layer of source-drain electrode figure, the sub- auxiliary cathode layer far from underlay substrate can be arranged with 103 same layer of anode layer.
At this point it is possible to increase the thickness of auxiliary cathode layer 102, to further increase the contact surface of auxiliary cathode layer 102 Yu cathode layer 105
Product, reduces the parallel resistance of auxiliary cathode layer 102 and cathode layer 105, and then effectively reduces the resistance of cathode construction.
In conclusion display panel provided in an embodiment of the present invention, by auxiliary cathode structure far from underlay substrate
At least one groove being arranged on surface, enables cathode layer to contact in groove with auxiliary cathode structure, compared to correlation
Technology increases the contact area of auxiliary cathode layer and cathode layer, reduces the contact resistance of cathode layer Yu auxiliary cathode layer, into
And the parallel resistance of cathode layer Yu auxiliary cathode layer is reduced, achieve the effect that the resistance for reducing cathode construction.Also, pass through
Contact cathode layer in groove with auxiliary cathode structure, so that cathode can be increased without the area for changing auxiliary cathode structure
Have with the contact area of auxiliary cathode structure so that the setting of the auxiliary cathode structure will not influence the aperture opening ratio of pixel unit
The display effect that ensure that display panel of effect.
The embodiment of the invention provides a kind of manufacturing method of display panel, the manufacturing method of the display panel can be used for making
Make display panel provided by the embodiment of the present invention.Referring to FIG. 10, this method may include:
Step 201 provides a underlay substrate.
Step 202, formation auxiliary cathode layer and anode layer, auxiliary cathode layer include at least one auxiliary on underlay substrate
Cathode construction, each auxiliary cathode structure is far from being formed at least one groove on the surface of underlay substrate, anode layer and auxiliary
Cathode layer insulation.
Step 203 forms luminescent layer on the underlay substrate for be formed with anode layer.
Step 204 forms cathode layer on the underlay substrate for be formed with luminescent layer, and cathode layer is in groove and auxiliary cathode
Layer contact.
In conclusion the manufacturing method of display panel provided in an embodiment of the present invention, by separate in auxiliary cathode structure
At least one groove is formed on the surface of underlay substrate, cathode layer is contacted in groove with auxiliary cathode structure, phase
Compared with the relevant technologies, the contact area of auxiliary cathode layer and cathode layer is increased, reduces connecing for cathode layer and auxiliary cathode layer
Electric shock resistance, and then the parallel resistance of cathode layer Yu auxiliary cathode layer is reduced, achieve the effect that the resistance for reducing cathode construction,
The display effect of display panel is effectively guaranteed.
The embodiment of the invention provides the manufacturing method of another display panel, the manufacturing method of the display panel can be used for
Manufacture display panel provided by the embodiment of the present invention.Figure 11 is please referred to, this method may include:
Step 301 provides a underlay substrate.
Optionally, substrate can be transparent substrate, and specifically can be is had centainly by glass, quartz, transparent resin etc.
Substrate made of the light transmission of hardness and nonmetallic materials.
Step 302 forms thin film transistor (TFT) on underlay substrate.
Optionally, which can be top gate type thin film transistor, or bottom gate thin film transistor.When
When the thin film transistor (TFT) is top gate type thin film transistor, the process of the formation thin film transistor (TFT) may include: successively in substrate base
Active layer, the first insulating layer, grid, the second gate insulation layer and source-drain electrode figure are formed on plate.When the thin film transistor (TFT) is bottom gate
When type thin film transistor (TFT), the process of the formation thin film transistor (TFT) may include: that grid, gate insulation are successively formed on underlay substrate
Layer, active layer and source-drain electrode figure.
It can be using magnetron sputtering, thermal evaporation or plasma enhanced chemical vapor deposition method (English: Plasma
Enhanced Chemical Vapor Deposition；Depositing one layer the methods of referred to as: PECVD) on underlay substrate has
Certain thickness semiconductor material obtains semiconductor material layer, is then carried out by a patterning processes to semiconductor material layer
Processing obtains active layer.Wherein, a patterning processes may include: photoresist coating, exposure, development, etching and photoresist stripping
From.Semiconductor material can be indium gallium zinc oxide (English: indium gallium zinc oxide；Referred to as: IGZO), non-
Crystal silicon (English: Amorphous silicone；Referred to as: a-Si) or polysilicon is (English: polycrystalline silicon；
The materials such as referred to as: P-Si).And the thickness of the active layer can be determine according to actual needs.Wherein, its in thin film transistor (TFT) is formed
The realization process of his film layer can accordingly refer to the realization process of the formation active layer.
It is exemplary, Figure 12 show it is provided in an embodiment of the present invention one kind on underlay substrate 101 formed active layer 107 after
Structural schematic diagram, Figure 13 shows provided in an embodiment of the present invention a kind of on the underlay substrate 101 for being formed with active layer 107
Structural schematic diagram after forming the first gate insulation layer 108, grid 109 and the second gate insulation layer 110, Figure 14 show of the invention real
A kind of structure formed after source-drain electrode figure 106 on the underlay substrate 101 for being formed with the second gate insulation layer 110 of example offer is provided
Schematic diagram.
Step 303 forms auxiliary cathode layer and anode layer on the underlay substrate for be formed with thin film transistor (TFT).
Optionally, the implementation of the step 303 can there are many, the embodiment of the present invention by it is following it is several for said
It is bright:
Auxiliary cathode can be formed on the underlay substrate for being formed with source-drain electrode figure in realization mode at the first
Layer, then forms anode layer on the underlay substrate for being formed with auxiliary cathode layer.
It can use the methods of magnetron sputtering, thermal evaporation or PECVD on the underlay substrate for being formed with source-drain electrode figure,
One layer of deposition has certain thickness auxiliary cathode material, obtains auxiliary cathode material layers, then passes through a patterning processes pair
The auxiliary cathode material layers are handled to obtain auxiliary cathode layer.Then, using the side such as magnetron sputtering, thermal evaporation or PECVD
For method on the underlay substrate for being formed with auxiliary cathode layer, one layer of deposition has certain thickness anode material, obtains anode material
Then anode material layers are handled to obtain anode layer by layer by a patterning processes.Optionally, auxiliary cathode material and sun
Pole material all can be metal molybdenum (Mo), metallic copper (Cu), metallic aluminium (Al) or its alloy material, or, or metal
Oxide (such as tin indium oxide (ITO)) material is made.Also, auxiliary cathode material can also with manufacture grid material and/
Or the material of manufacture source-drain electrode is identical.And the thickness of the thickness of the auxiliary cathode layer and the anode layer can be according to actual needs
It determines.Exemplary, Figure 15 is shown forms auxiliary cathode layer 102 and sun on the underlay substrate 101 for being formed with thin film transistor (TFT)
Structural schematic diagram after pole layer 103.
It should be noted that as shown in figure 15, it, can also be in shape before forming auxiliary cathode layer 102 and anode layer 103
At planarization layer 111 is formed on the underlay substrate 101 of active drain patterns 106, then in the lining for being formed with the planarization layer 111
Auxiliary cathode layer 102 and anode layer 103 are formed on substrate 101.
It should also be noted that, a composition can be passed through when auxiliary cathode layer is identical as the material of source-drain electrode figure
Technique forms auxiliary cathode layer and source-drain electrode figure.It can simplify the manufacturing process of display panel in this way, and save manufacturing cost.
At this point it is possible to planarization layer be formed on the underlay substrate for being formed with the auxiliary cathode layer and the source-drain electrode figure, then in shape
At forming anode layer on the underlay substrate for having the planarization layer.Figure 16 is shown in the underlay substrate for being formed with thin film transistor (TFT)
Auxiliary cathode layer 102 and source-drain electrode figure 106 are formed by a patterning processes on 101, and is being formed with the auxiliary cathode layer
102 and the underlay substrate 101 of source-drain electrode figure 106 sequentially form the structural schematic diagram after planarization layer 111 and anode layer 103.
In second of achievable mode, anode layer can be formed on the underlay substrate for being formed with source-drain electrode figure, so
Auxiliary cathode layer is formed on the underlay substrate for be formed with anode layer afterwards.
It can use the methods of magnetron sputtering, thermal evaporation or PECVD on the underlay substrate for being formed with source-drain electrode figure,
One layer of deposition has certain thickness anode material, anode material layers is obtained, then by a patterning processes to anode material
Layer is handled to obtain anode layer.Then, anode layer is being formed with using the methods of magnetron sputtering, thermal evaporation or PECVD
On underlay substrate, one layer of deposition has certain thickness auxiliary cathode material, auxiliary cathode material layers is obtained, then by primary
Patterning processes are handled to obtain auxiliary cathode layer to the auxiliary cathode material layers.Wherein, anode material and auxiliary cathode material
It all can be metal molybdenum (Mo), metallic copper (Cu), metallic aluminium (Al) or its alloy material etc..And the anode layer and the auxiliary cathode
The thickness of layer can be determine according to actual needs.It is exemplary, auxiliary yin is formed on the underlay substrate for be formed with thin film transistor (TFT)
Structural schematic diagram after pole layer and anode layer please refers to Figure 15.
It should be noted that when anode material and auxiliary cathode material phase it is also possible to be existed by a patterning processes
It is formed on the underlay substrate of source-drain electrode figure and forms anode layer and auxiliary cathode layer.Anode is formed when passing through a patterning processes
When layer and auxiliary cathode layer, it is possible to reduce patterning processes at least once, to simplify the manufacturing process and manufacturing cost of display panel.
It should also be noted that, as shown in figure 15, forming auxiliary yin on the underlay substrate 101 for being formed with thin film transistor (TFT)
Before pole layer 102 and anode layer 103, planarization layer can also be formed on the underlay substrate 101 for being formed with source-drain electrode figure 106
111, auxiliary cathode layer 102 and anode layer 103 are then formed on the underlay substrate 101 for be formed with the planarization layer 111.
In two kinds of implementations, which may include at least one auxiliary cathode structure.Each auxiliary
Cathode construction is far from being provided at least one groove on the surface of underlay substrate.Optionally, each in the auxiliary cathode structure
Groove can be blind slot or through slot (please referring to Figure 15).Also, orthographic projection of the auxiliary cathode layer on underlay substrate can be with this
Orthographic projection of the anode layer on underlay substrate is not overlapped, to guarantee to insulate between auxiliary cathode layer and anode layer.And/or this is auxiliary
Help orthographic projection of the cathode layer on underlay substrate not be overlapped with the orthographic projection of the source-drain electrode figure on underlay substrate, to protect
It insulate between card auxiliary cathode layer and source-drain electrode figure, and then guarantees that anode layer and cathode layer will not short circuits.
It should be noted that the auxiliary cathode layer can be made of the multiple sub- auxiliary cathode layers being superposed.For example, working as
When the auxiliary cathode layer is made of two be superposed sub- auxiliary cathode layers, source-drain electrode can be formed by a patterning processes
The sub- auxiliary cathode layer of figure and close underlay substrate passes through a patterning processes and forms anode layer and the son far from underlay substrate
Auxiliary cathode layer.At this point it is possible to increase the thickness of auxiliary cathode layer, to further increase contact of the auxiliary cathode layer with cathode layer
Area, reduces the parallel resistance of auxiliary cathode layer and cathode layer, and then effectively reduces the resistance of cathode construction.
Step 304 forms luminescent layer on the underlay substrate for be formed with anode layer.
When step 303 the realization process includes: on the underlay substrate for being formed with source-drain electrode figure formed auxiliary cathode layer,
Then when forming anode layer on the underlay substrate for being formed with auxiliary cathode layer, the first of the step 304 realizes that process can be with
It include: that luminescent layer is formed on the underlay substrate for be formed with the anode layer.When step 303 is the realization process includes: being formed with
Anode layer is formed on the underlay substrate of source-drain electrode figure, and auxiliary cathode layer is then formed on the underlay substrate for be formed with anode layer
When, second of realization process of the step 304 may include: to be formed to shine on the underlay substrate for being formed with the auxiliary cathode layer
Layer.At this point, due to being formed with anode layer on underlay substrate, which, which also can be considered, is being formed with
Luminescent layer is formed on the underlay substrate of anode layer.
Below by taking the first realization process as an example, the realization process of the formation luminescent layer is illustrated: can be using steaming
Processing procedure or solution process are plated on the underlay substrate for being formed with anode layer, one layer of deposition has certain thickness luminescent material, obtains
To luminescent material layer, then luminescent material layer is handled to obtain luminescent layer by a patterning processes.Wherein, the material that shines
The thickness of material and the luminescent layer can be determine according to actual needs.For example, the thickness of luminescent layer can be less than the groove depth of groove, with
Guarantee that the cathode layer being subsequently formed can contact in groove with auxiliary cathode layer.Optionally, the side where the groove depth of the groove
The surface of underlay substrate can be each perpendicular to the direction where the thickness with luminescent layer.
Solution process may include: the modes such as inkjet printing, coating, spin coating and silk-screen printing.And when using inkjet printing
Mode is formed before luminescent layer, can form pixel defining layer on the underlay substrate for be formed with anode layer in advance, to limit spray
The solution of dissolution luminescent material accurately flows into specified pixel region when ink printing.
Also, orthographic projection of the luminescent layer of the formation on underlay substrate can be with auxiliary cathode layer on underlay substrate
Orthographic projection is not overlapped, so that auxiliary cathode structure is far from being not formed luminescent layer on the surface of underlay substrate.Its implementation can
To include: baffle to be arranged on surface of the auxiliary cathode structure far from underlay substrate, so that being formed before forming luminescent layer
During luminescent layer, which is used to form the material of luminescent layer far from that can not be formed on the surface of underlay substrate
Material.Alternatively, can be removed by modes such as patterning processes after forming luminescent layer and be formed in auxiliary cathode structure far from substrate base
Luminescent layer on the surface of plate, so that auxiliary cathode structure is far from being not formed luminescent layer on the surface of underlay substrate.
Optionally, before forming luminescent layer, baffle can also be set in the top surface of groove, so that being used to form luminescent layer
Material can not be formed in a groove, and the baffle is removed before forming cathode, in order in the process for being subsequently formed cathode layer
In, the material for being used to form cathode layer can be formed in the groove, so that being simply formed with cathode layer in groove.Alternatively, in shape
After luminescent layer, the luminescent layer being formed in the groove can be removed by modes such as patterning processes, so that only being formed in groove
There is cathode layer.
Step 305 forms cathode layer on the underlay substrate for be formed with luminescent layer, and the cathode layer is negative with auxiliary in groove
Pole layer contact.
Can be using the methods of magnetron sputtering, thermal evaporation or PECVD on the underlay substrate for being formed with luminescent layer, deposition
One layer has certain thickness cathode material, obtains cathode material layers, then by patterning processes to cathode material layers into
Row processing obtains cathode layer.Wherein, cathode material can be metallic silver (Ag), magnesium metal (Mg), metallic aluminium (Al) or its alloy
Material.And orthographic projection of the cathode layer on underlay substrate can cover orthographic projection of the auxiliary cathode layer on underlay substrate.With
And the thickness of the cathode layer can be determine according to actual needs.
When orthographic projection covering auxiliary cathode layer orthographic projection on underlay substrate of the cathode layer on underlay substrate, and it is auxiliary
When cathode layer being helped to be greater than the thickness of luminescent layer far from the groove depth for the groove being arranged on the surface of underlay substrate, the cathode layer is being formed
During, will form the material for being used to form cathode layer in groove so that cathode layer in groove with auxiliary cathode structure
Contact.By contacting cathode layer in groove with auxiliary cathode structure, always connecing for cathode layer and auxiliary cathode structure is increased
Contacting surface product, reduces the parallel resistance of cathode layer Yu auxiliary cathode layer, has achieved the effect that the resistance for reducing cathode construction, effectively
The display effect that ensure that display panel.Also, it, can be largely when the groove of the auxiliary cathode structure is through slot
Increase the contact area of auxiliary cathode layer and cathode layer.
It is exemplary, Figure 17 is please referred to, it illustrates provided in an embodiment of the present invention a kind of in the lining for being formed with luminescent layer 104
The structural schematic diagram after cathode layer 105 is formed on substrate 101, as shown in figure 17, auxiliary cathode layer 102 is far from underlay substrate
Formed on 101 surface it is fluted, be formed in the groove be used to form luminescent layer 104 material and be used to form cathode layer
105 material, at this point, cathode layer 105 can contact in the groove with auxiliary cathode layer 102, increase cathode layer 105 with it is auxiliary
Help total contact area of cathode construction 1021.
It should be noted that the auxiliary cathode layer can also be arranged with source-drain electrode figure same layer, and more by planarization layer
Mend the film layer segment difference between auxiliary cathode layer and source-drain electrode figure.At this point, since planarization layer usually has biggish thickness, it can
So that the auxiliary cathode layer has biggish thickness, to further increase total contact area of cathode layer Yu auxiliary cathode structure.
Illustratively, Figure 18 shows another structure on underlay substrate 101 after formation cathode layer 105 provided in an embodiment of the present invention
Schematic diagram, as shown in figure 18, the auxiliary cathode layer 102 and 106 same layer of source-drain electrode figure are arranged, and the auxiliary cathode layer 102
With biggish thickness, at this point, cathode layer 105 and auxiliary cathode structure 1021 have biggish contact area.
Also, when orthographic projection of the luminescent layer on underlay substrate is not weighed with orthographic projection of the auxiliary cathode layer on underlay substrate
When folded, when due to auxiliary cathode structure far from luminescent layer is not formed on the surface of underlay substrate, in the lining for being formed with luminescent layer
When forming cathode layer on substrate, which could be formed with far from the surface of underlay substrate is used to form the cathode
The material of layer enables the cathode layer formed to contact in groove with auxiliary cathode layer, and the cathode layer can be in auxiliary yin
Pole layer is contacted far from the surface of underlay substrate with the auxiliary cathode layer, further to increase connecing for cathode layer and auxiliary cathode layer
Contacting surface product.
In conclusion the manufacturing method of display panel provided in an embodiment of the present invention, by separate in auxiliary cathode structure
At least one groove formed on the surface of underlay substrate, enables cathode layer to contact in groove with auxiliary cathode structure,
Compared to the relevant technologies, the contact area of auxiliary cathode layer and cathode layer is increased, reduces cathode layer and auxiliary cathode layer
Contact resistance, and then the parallel resistance of cathode layer Yu auxiliary cathode layer is reduced, reach the effect for reducing the resistance of cathode construction
Fruit.Also, by contacting cathode layer in groove with auxiliary cathode structure, so that without the area for changing auxiliary cathode structure
The contact area of cathode Yu auxiliary cathode structure can be increased, so that the setting of the auxiliary cathode structure will not influence pixel unit
Aperture opening ratio, the display effect of display panel is effectively guaranteed.
It should be noted that the sequencing of the manufacturing method step of display panel provided in an embodiment of the present invention can be into
Row appropriate adjustment, step according to circumstances can also accordingly be increased and decreased, and anyone skilled in the art is in this hair
In the technical scope of bright exposure, the method that can readily occur in variation be should be covered by the protection scope of the present invention, therefore not
It repeats again.
The embodiment of the present invention provides a kind of display device, which may include: provided by the embodiment of the present invention
Display panel.
Optionally, which can be with are as follows: source matrix organic electroluminescent LED display panel (English: Active
Matrix Organic Light Emitting Diode；Referred to as: AMOLED), liquid crystal display panel, Electronic Paper, organic light-emitting diodes
The component of the devices such as tube face plate, mobile phone, tablet computer, television set, display, laptop, Digital Frame, navigator.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of display panel, which is characterized in that the display panel includes:
Auxiliary cathode layer and anode layer on underlay substrate are set, and, on the underlay substrate for being provided with the anode layer
The luminescent layer and cathode layer being stacked, the anode layer and the auxiliary cathode layer insulate；
The auxiliary cathode layer includes at least one auxiliary cathode structure, and each auxiliary cathode structure is far from the substrate base
At least one groove is provided on the surface of plate, the cathode layer is contacted with the auxiliary cathode layer in the groove.
2. display panel according to claim 1, which is characterized in that each groove in the auxiliary cathode structure is logical
Slot.
3. display panel according to claim 1, which is characterized in that positive throwing of the luminescent layer on the underlay substrate
Shadow and orthographic projection of the auxiliary cathode layer on the underlay substrate be not be overlapped.
4. display panel according to claim 1, which is characterized in that the cathode layer fills each groove.
5. display panel according to any one of claims 1 to 4, which is characterized in that the display panel includes array arrangement
Multiple pixel units, each pixel unit includes display area and non-display area, and the auxiliary cathode structure is located at
In the non-display area.
6. display panel according to any one of claims 1 to 4, which is characterized in that the display panel includes multiple pixels
Unit group, each pixel unit group include at least one pixel unit, the cathode in each pixel unit group with it is same
The connection of auxiliary cathode structure.
7. display panel according to claim 6, which is characterized in that each pixel unit group includes four pixel lists
Member, the auxiliary cathode structure connecting with the cathode in four pixel units are located at four pixel unit regions
Geometric center.
8. display panel according to any one of claims 1 to 4, which is characterized in that the display panel further include: setting exists
Source-drain electrode figure on the underlay substrate, orthographic projection of the auxiliary cathode layer on the underlay substrate and the source-drain electrode
Orthographic projection of the figure on the underlay substrate is not overlapped；
The source-drain electrode figure between the underlay substrate and the auxiliary cathode layer, alternatively, the source-drain electrode figure with
The auxiliary cathode layer same layer setting.
9. a kind of manufacturing method of display panel, which is characterized in that the described method includes:
One underlay substrate is provided；
Auxiliary cathode layer is formed on the underlay substrate and anode layer, the auxiliary cathode layer include at least one auxiliary cathode
Structure is formed at least one groove, the anode on each surface of the auxiliary cathode structure far from the underlay substrate
Layer insulate with the auxiliary cathode layer；
Luminescent layer is formed on the underlay substrate for being formed with the anode layer；
Form cathode layer on the underlay substrate for being formed with the luminescent layer, the cathode layer in the groove with the auxiliary
Cathode layer contact.
10. a kind of display device, which is characterized in that the display device includes any display surface of claim 1 to 8
Plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811095876.3A CN109244269B (en) | 2018-09-19 | 2018-09-19 | Display panel, manufacturing method thereof and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811095876.3A CN109244269B (en) | 2018-09-19 | 2018-09-19 | Display panel, manufacturing method thereof and display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109244269A true CN109244269A (en) | 2019-01-18 |
| CN109244269B CN109244269B (en) | 2021-01-26 |
Family
ID=65059248
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811095876.3A Active CN109244269B (en) | 2018-09-19 | 2018-09-19 | Display panel, manufacturing method thereof and display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109244269B (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110048022A (en) * | 2019-04-22 | 2019-07-23 | 深圳市华星光电半导体显示技术有限公司 | A kind of OLED device and preparation method thereof |
| CN110061145A (en) * | 2019-04-08 | 2019-07-26 | 深圳市华星光电半导体显示技术有限公司 | A kind of organic light emitting diode display and preparation method thereof |
| CN110176483A (en) * | 2019-06-24 | 2019-08-27 | 深圳市华星光电半导体显示技术有限公司 | Organic light emitting diode display |
| CN110993671A (en) * | 2019-12-18 | 2020-04-10 | 京东方科技集团股份有限公司 | OLED display substrate, manufacturing method thereof and display device |
| CN111244148A (en) * | 2020-03-20 | 2020-06-05 | 武汉天马微电子有限公司 | Display panel and display device |
| CN111261799A (en) * | 2020-01-02 | 2020-06-09 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display panel |
| CN112331801A (en) * | 2020-10-30 | 2021-02-05 | 合肥鑫晟光电科技有限公司 | Display panel, preparation method thereof and display device |
| CN112993182A (en) * | 2021-02-05 | 2021-06-18 | 深圳市华星光电半导体显示技术有限公司 | Display panel and display device |
| CN113013362A (en) * | 2021-02-26 | 2021-06-22 | 云谷（固安）科技有限公司 | Display panel, preparation method of display panel and display device |
| CN113193025A (en) * | 2021-04-27 | 2021-07-30 | 深圳市华星光电半导体显示技术有限公司 | Display panel and display device |
| WO2022178827A1 (en) * | 2021-02-26 | 2022-09-01 | 京东方科技集团股份有限公司 | Display substrate and preparation method therefor, and display device |
| CN115988900A (en) * | 2022-12-28 | 2023-04-18 | 深圳市华星光电半导体显示技术有限公司 | Display panel, preparation method thereof and display device |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1825614A (en) * | 2004-11-29 | 2006-08-30 | 三星Sdi株式会社 | Organic electroluminescence display device having auxiliary electrode line and method of manufacturing the same |
| CN101005117A (en) * | 2006-01-16 | 2007-07-25 | 精工爱普生株式会社 | Light-emitting device, method for manufacturing light-emitting device, and electronic apparatus |
| CN101599534A (en) * | 2008-06-06 | 2009-12-09 | 索尼株式会社 | Organic luminescent device and manufacture method thereof, display unit and electronic installation |
| KR20140080231A (en) * | 2012-12-20 | 2014-06-30 | 엘지디스플레이 주식회사 | Flexible type organic light emitting diode device and fabricating method thereof |
| CN104659063A (en) * | 2014-12-30 | 2015-05-27 | 京东方科技集团股份有限公司 | Display substrate, manufacture method thereof, display panel and mask plate |
| CN105226200A (en) * | 2014-06-26 | 2016-01-06 | 四川虹视显示技术有限公司 | A kind of auxiliary electrode |
| CN105576001A (en) * | 2014-11-03 | 2016-05-11 | 三星显示有限公司 | Organic light-emitting diode display |
| US20160181350A1 (en) * | 2014-12-18 | 2016-06-23 | Samsung Display Co., Ltd. | Organic light-emitting display apparatus and method of manufacturing the same |
| CN107093680A (en) * | 2017-05-04 | 2017-08-25 | 京东方科技集团股份有限公司 | Metal auxiliary electrode and the manufacture method using its display device |
| CN107604306A (en) * | 2017-09-12 | 2018-01-19 | 深圳市华星光电半导体显示技术有限公司 | For the mask plate of OLED evaporation and its OLED of manufacture |
| CN107611283A (en) * | 2017-10-13 | 2018-01-19 | 深圳市华星光电半导体显示技术有限公司 | The preparation method and oled panel of oled panel |
| CN207082555U (en) * | 2017-08-28 | 2018-03-09 | 京东方科技集团股份有限公司 | Display base plate and display panel |
| CN108470749A (en) * | 2018-03-07 | 2018-08-31 | 深圳市华星光电半导体显示技术有限公司 | Display panel and its manufacturing method |
-
2018
- 2018-09-19 CN CN201811095876.3A patent/CN109244269B/en active Active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1825614A (en) * | 2004-11-29 | 2006-08-30 | 三星Sdi株式会社 | Organic electroluminescence display device having auxiliary electrode line and method of manufacturing the same |
| CN100578806C (en) * | 2004-11-29 | 2010-01-06 | 三星移动显示器株式会社 | Organic electroluminescence display device having auxiliary electrode line and method of manufacturing the same |
| CN101005117A (en) * | 2006-01-16 | 2007-07-25 | 精工爱普生株式会社 | Light-emitting device, method for manufacturing light-emitting device, and electronic apparatus |
| CN101599534A (en) * | 2008-06-06 | 2009-12-09 | 索尼株式会社 | Organic luminescent device and manufacture method thereof, display unit and electronic installation |
| KR20140080231A (en) * | 2012-12-20 | 2014-06-30 | 엘지디스플레이 주식회사 | Flexible type organic light emitting diode device and fabricating method thereof |
| CN105226200A (en) * | 2014-06-26 | 2016-01-06 | 四川虹视显示技术有限公司 | A kind of auxiliary electrode |
| CN105576001A (en) * | 2014-11-03 | 2016-05-11 | 三星显示有限公司 | Organic light-emitting diode display |
| US20160181350A1 (en) * | 2014-12-18 | 2016-06-23 | Samsung Display Co., Ltd. | Organic light-emitting display apparatus and method of manufacturing the same |
| CN104659063A (en) * | 2014-12-30 | 2015-05-27 | 京东方科技集团股份有限公司 | Display substrate, manufacture method thereof, display panel and mask plate |
| CN107093680A (en) * | 2017-05-04 | 2017-08-25 | 京东方科技集团股份有限公司 | Metal auxiliary electrode and the manufacture method using its display device |
| CN207082555U (en) * | 2017-08-28 | 2018-03-09 | 京东方科技集团股份有限公司 | Display base plate and display panel |
| CN107604306A (en) * | 2017-09-12 | 2018-01-19 | 深圳市华星光电半导体显示技术有限公司 | For the mask plate of OLED evaporation and its OLED of manufacture |
| CN107611283A (en) * | 2017-10-13 | 2018-01-19 | 深圳市华星光电半导体显示技术有限公司 | The preparation method and oled panel of oled panel |
| CN108470749A (en) * | 2018-03-07 | 2018-08-31 | 深圳市华星光电半导体显示技术有限公司 | Display panel and its manufacturing method |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110061145A (en) * | 2019-04-08 | 2019-07-26 | 深圳市华星光电半导体显示技术有限公司 | A kind of organic light emitting diode display and preparation method thereof |
| CN110048022A (en) * | 2019-04-22 | 2019-07-23 | 深圳市华星光电半导体显示技术有限公司 | A kind of OLED device and preparation method thereof |
| CN110176483A (en) * | 2019-06-24 | 2019-08-27 | 深圳市华星光电半导体显示技术有限公司 | Organic light emitting diode display |
| CN110176483B (en) * | 2019-06-24 | 2020-10-27 | 深圳市华星光电半导体显示技术有限公司 | Organic light emitting diode display |
| WO2020258519A1 (en) * | 2019-06-24 | 2020-12-30 | 深圳市华星光电半导体显示技术有限公司 | Organic light-emitting diode display |
| CN110993671A (en) * | 2019-12-18 | 2020-04-10 | 京东方科技集团股份有限公司 | OLED display substrate, manufacturing method thereof and display device |
| CN111261799A (en) * | 2020-01-02 | 2020-06-09 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display panel |
| CN111244148A (en) * | 2020-03-20 | 2020-06-05 | 武汉天马微电子有限公司 | Display panel and display device |
| CN112331801A (en) * | 2020-10-30 | 2021-02-05 | 合肥鑫晟光电科技有限公司 | Display panel, preparation method thereof and display device |
| CN112331801B (en) * | 2020-10-30 | 2023-11-28 | 合肥鑫晟光电科技有限公司 | Display panel, preparation method thereof and display device |
| CN112993182A (en) * | 2021-02-05 | 2021-06-18 | 深圳市华星光电半导体显示技术有限公司 | Display panel and display device |
| CN113013362A (en) * | 2021-02-26 | 2021-06-22 | 云谷（固安）科技有限公司 | Display panel, preparation method of display panel and display device |
| WO2022178827A1 (en) * | 2021-02-26 | 2022-09-01 | 京东方科技集团股份有限公司 | Display substrate and preparation method therefor, and display device |
| CN115280537A (en) * | 2021-02-26 | 2022-11-01 | 京东方科技集团股份有限公司 | Display substrate, preparation method thereof and display device |
| CN115280537B (en) * | 2021-02-26 | 2024-04-05 | 京东方科技集团股份有限公司 | Display substrate, preparation method thereof and display device |
| CN113193025A (en) * | 2021-04-27 | 2021-07-30 | 深圳市华星光电半导体显示技术有限公司 | Display panel and display device |
| WO2022227228A1 (en) * | 2021-04-27 | 2022-11-03 | 深圳市华星光电半导体显示技术有限公司 | Display panel and display apparatus |
| CN113193025B (en) * | 2021-04-27 | 2024-05-07 | 深圳市华星光电半导体显示技术有限公司 | Display panel and display device |
| CN115988900A (en) * | 2022-12-28 | 2023-04-18 | 深圳市华星光电半导体显示技术有限公司 | Display panel, preparation method thereof and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109244269B (en) | 2021-01-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109244269A (en) | Display panel and its manufacturing method, display device | |
| KR102508708B1 (en) | Display panel and its manufacturing method | |
| CN108231830B (en) | Organic light emitting display device | |
| CN111524956B (en) | Display panel and display device | |
| CN104752637B (en) | Organic Light Emitting Display Device And Fabricating Method Thereof | |
| CN104885251B (en) | Transparent organic light emitting display device and method for manufacturing the same | |
| US11903281B2 (en) | Array substrate and manufacturing method thereof, display panel, display device and pixel driving circuit | |
| JP5725337B2 (en) | Display device, display device manufacturing method, and electronic apparatus | |
| CN110047898A (en) | Display base plate and its manufacturing method, display device | |
| CN103489894A (en) | Active matrix organic electroluminescence display part and display device and manufacturing method thereof | |
| CN109860227A (en) | Organic light-emitting display device | |
| KR20170015637A (en) | Organic light emitting display device | |
| CN111180497A (en) | Display substrate, manufacturing method thereof, display panel and display device | |
| CN111312752B (en) | Organic light emitting display device | |
| CN106997893B (en) | Organic light emitting display device and method of manufacturing the same | |
| JP2004111369A (en) | Organic electroluminescent display device and its manufacturing method | |
| JP2006114910A (en) | Organic electroluminescence device and fabrication method thereof | |
| US9324741B2 (en) | Display device, manufacturing method of display device and electronic equipment | |
| CN102130147B (en) | Display, method of manufacturing display and electronic device | |
| JP2022539621A (en) | Display panel, manufacturing method thereof, and display device | |
| US11263964B2 (en) | Display panel, display screen, and display terminal | |
| CN112968135A (en) | Display substrate and related device | |
| KR20180003965A (en) | Organic light emitting display device and method for manufacturing the same | |
| CN108321305B (en) | OLED display panel and display device | |
| KR102648412B1 (en) | Organic Light Emitting Diode Display Device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |