CN110165009B - Photovoltaic module and module string - Google Patents

Photovoltaic module and module string Download PDF

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Publication number
CN110165009B
CN110165009B CN201910369064.1A CN201910369064A CN110165009B CN 110165009 B CN110165009 B CN 110165009B CN 201910369064 A CN201910369064 A CN 201910369064A CN 110165009 B CN110165009 B CN 110165009B
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photovoltaic module
battery
string
strings
sliced
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CN110165009A (en
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曹鑫
陈国清
朱琛
吕俊
龚宇泽
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Jiaxing Longi Solar Technology Co Ltd
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Jiaxing Longi Solar Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/044—PV modules or arrays of single PV cells including bypass diodes
    • H01L31/0443—PV modules or arrays of single PV cells including bypass diodes comprising bypass diodes integrated or directly associated with the devices, e.g. bypass diodes integrated or formed in or on the same substrate as the photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

The invention discloses a photovoltaic module and a module string, comprising: n bypass diodes and M photovoltaic module areas, wherein N is more than or equal to 1, and M is more than or equal to 3; the M photovoltaic module areas are sequentially arranged along a first direction; each photovoltaic module area comprises N cell strings, and the N cell strings are sequentially arranged at intervals along a second direction; the first direction is perpendicular to the second direction; the N battery strings correspond to the N bypass diodes respectively, each battery string is connected with two ends of each bypass diode in an anti-parallel mode, and the N battery strings are connected in series; each battery string comprises a plurality of sliced batteries which are connected in series, wherein the sliced batteries are 1/R slices of the whole battery, and R is more than or equal to 2; the cell strings at the same arrangement position in each photovoltaic module area share the same bypass diode. The power generation amount of a single photovoltaic module or a photovoltaic module array when the whole row is shielded can be effectively improved, and the power loss when small-area shielding is generated can be reduced.

Description

Photovoltaic module and module string
Technical Field
The invention relates to the technical field of photovoltaic modules, in particular to a photovoltaic module and a module string.
Background
The photovoltaic module can be divided into an integral module and a half-module according to the number of the battery slices, the half-module is widely adopted in the industry at present, but some problems still exist in the practical use.
When the bottom cell of the photovoltaic module array is shielded, the output power of the half-piece module array is not advantageous before the half-piece module array shields 50% of the whole cell, and the output power of the half-piece module array is advantageous only when the shielding exceeds 50% of the whole cell; when small-area shielding occurs to a single module assembly in the array, the power consumption of the shielded slice battery is close to 60W, and the local temperature of the battery is overhigh due to the power consumption, so that the battery is easily damaged at high temperature.
In view of this, how to develop a photovoltaic module and a module string with higher power, higher efficiency, and higher safety and reliability is an urgent problem to be solved.
Disclosure of Invention
In view of the above-mentioned defects or shortcomings in the prior art, it is desirable to provide a photovoltaic module and a module string, which aims to effectively improve the power generation amount when a whole row of a single photovoltaic module or a photovoltaic module array is shielded, and also to reduce the power loss when a small-area shielding occurs.
A first aspect of the present invention provides a photovoltaic module comprising:
n bypass diodes and M photovoltaic module areas, wherein N is more than or equal to 1, and M is more than or equal to 3; the M photovoltaic module areas are sequentially arranged along a first direction;
each photovoltaic module area comprises N cell strings, and the N cell strings are sequentially arranged at intervals along a second direction; the first direction is perpendicular to the second direction; the N battery strings correspond to the N bypass diodes respectively, each battery string is connected with two ends of each bypass diode in an anti-parallel mode, and the N battery strings are connected in series;
each battery string comprises a plurality of sliced batteries which are connected in series, wherein the sliced batteries are 1/R slices of the whole battery, and R is more than or equal to 2;
the cell strings at the same arrangement position in each photovoltaic module area share the same bypass diode.
Furthermore, the battery string is formed by connecting two battery sub-strings with opposite extension directions in series.
Further, M ═ 3 or M ═ 4.
Further, when M is 3, the bypass diode is located between the photovoltaic module region located in the middle and the photovoltaic module region located at the edge; when M is 4, the bypass diode is positioned between two photovoltaic module areas positioned in the middle;
in the photovoltaic module region not adjacent to the bypass diode, the common bus bar of the adjacent cell strings is electrically connected with the bypass diode.
Further, the number of the slice batteries contained in each battery sub-string is X, wherein X is more than or equal to 8 and less than or equal to 20.
Further, M is 3, the sliced battery is 1/3 slices of the whole battery, and the number X of the sliced batteries is equal to 12.
Further, in the battery sub-string, the sliced batteries are connected in series through a conductive adhesive tape or a metal interconnection strip.
Further, two of the battery sub-strings in each of the battery strings are connected in series by a bus bar.
Further, the first direction is parallel to a long side of the photovoltaic module.
In a second aspect, the invention provides an assembly string, which includes several photovoltaic assemblies connected in series, and the photovoltaic assembly is any one of the photovoltaic assemblies provided in the first aspect of the invention.
Furthermore, the number of the photovoltaic modules in the module string is 6-22.
Compared with the prior art, the photovoltaic module provided by the application is in a multi-cutting multi-parallel mode, and each sliced battery is a 1/R slice of a whole battery, wherein R is more than or equal to 2, and M photovoltaic module areas are arranged, wherein M is more than or equal to 3; when the bottom of a single module or module array is shielded in a whole row, compared with a half-chip module, the module has larger output current, namely, larger output power, so that the power generation amount is improved; when the small-area shielding occurs on the single-block assembly or the assembly array, compared with the half-block assembly, the maximum current ratio which can flow through the sliced battery in the assembly is smaller, namely the consumed power is lower when the sliced battery is shielded, and the risk of damaging the battery due to overhigh consumed power is reduced.
Drawings
Other features, objects and advantages of the present application will become more apparent upon reading of the following detailed description of non-limiting embodiments thereof, made with reference to the accompanying drawings in which:
FIG. 1 is a circuit schematic of a conventional prior art half-chip module;
FIG. 2 is a circuit diagram of a 3-cut-to-3-merged component according to an embodiment of the present invention;
FIG. 3 is a circuit diagram of a 3-cut-4-merged component according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of the connection between the sliced cells in each cell sub-string in the 3-cut 3-parallel assembly provided by the embodiment of the invention;
FIG. 5 is a schematic view of a conventional half-wafer assembly bottom row cell shield;
FIG. 6 is a schematic view of a 3-cut-3 and assembled bottom row battery shield according to an embodiment of the present invention;
FIG. 7 is a schematic view of a conventional half wafer assembly monoblock battery shelter;
FIG. 8 is a schematic view of a 3-cut 3-assembled monoblock battery shelter provided by an embodiment of the present invention;
FIG. 9 is a schematic comparison of output power blocked by conventional half-chip module arrays and 3-cut 3-and-module array bottom row cells;
FIG. 10 is a schematic view of a 3-cut-3 and assembled junction box according to an embodiment of the present invention;
fig. 11 is a schematic view of current distribution blocked by a bottom row cell of a conventional half-chip assembly.
Fig. 12 is a schematic view of current distribution blocked by 3-cut and 3-assembled bottom row batteries according to an embodiment of the present invention.
Reference numerals: d1, D2, D3, D4, D5 and D6 are all bypass diodes, 204, 205, 206, 207, 208, 209, 210 and 211 are all bus bars, 100, 101 and 102 are all slice batteries, 11 is a conductive adhesive tape (or a metal interconnecting bar), and 11, 12 and 13 are all junction boxes.
Detailed Description
The present application will be described in further detail with reference to the following drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the relevant invention and not restrictive of the invention. It should be noted that, for convenience of description, only the portions related to the present invention are shown in the drawings.
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the embodiments with reference to the attached drawings.
The sliced cells of the currently mainstream half-chip module are 1/2 slices, the module is divided into two regions which are symmetrical up and down, namely, a region 1 and a region 2, the sliced cells in each region are connected in series, the two regions are connected in parallel, and share three bypass diodes, namely, D1, D2 and D3, as shown in fig. 1, which is a circuit schematic diagram of the conventional half-chip module.
However, the following problems still exist in the practical application of the half-sheet assembly: when the bottom cell of the photovoltaic module array is shielded, the output power of the half-piece module array is not advantageous before the half-piece module array shields 50% of the whole cell, and the output power of the half-piece module array is advantageous only when the shielding exceeds 50% of the whole cell; when small-area shielding occurs to a single module assembly in the array, the power consumption of the shielded slice battery is close to 60W, and the local temperature of the battery is overhigh due to the power consumption, so that the battery is easily damaged at high temperature.
Based on this, this application has proposed a photovoltaic module, can solve above-mentioned problem. This photovoltaic module specifically includes:
n bypass diodes and M photovoltaic module areas, wherein N is more than or equal to 1, and M is more than or equal to 3; the M photovoltaic module areas are sequentially arranged along a first direction;
each photovoltaic module area comprises N cell strings, and the N cell strings are sequentially arranged at intervals along a second direction; the first direction is perpendicular to the second direction; the N battery strings correspond to the N bypass diodes respectively, each battery string is connected with two ends of each bypass diode in an anti-parallel mode, and the N battery strings are connected in series;
each battery string comprises a plurality of sliced batteries which are connected in series, wherein the sliced batteries are 1/R slices of the whole battery, and R is more than or equal to 2;
the cell strings at the same arrangement position in each photovoltaic module area share the same bypass diode.
Specifically, the anti-parallel connection here means that the positive electrode of the bypass diode is connected to the negative electrode of the corresponding battery string, and the negative electrode of the bypass diode is connected to the positive electrode of the corresponding battery string.
Specifically, the cell strings at the same arrangement position in each photovoltaic module region share the same bypass diode, where the same arrangement position refers to the same column, and more specifically, the same column is the column where each cell string in M photovoltaic module regions is located, that is, the same bypass diode is shared by the cell strings in the same column in the M photovoltaic module regions.
It is understood that the N bypass diodes are shared by the M photovoltaic module regions, and the M photovoltaic module regions are connected in parallel with each other.
The photovoltaic module provided by the embodiment is in a multi-cutting multi-parallel mode, each sliced battery is a 1/R slice of a whole battery, wherein R is more than or equal to 2, and M photovoltaic module areas are arranged, wherein M is more than or equal to 3; when the bottom of the single block assembly or the assembly array is shielded in a whole row, compared with a half-sheet assembly, the assembly of the embodiment has larger output current, namely, larger output power, so that the power generation amount is improved; when the small-area shielding occurs on the single-block assembly or the assembly array, compared with the half-block assembly, the maximum current ratio which can flow through the sliced battery in the assembly is smaller, namely the power consumption is lower when the sliced battery is shielded, and the risk of damaging the battery due to overhigh power consumption is reduced.
Further, the sliced battery is a 1/R slice of a whole battery, wherein R is more than or equal to 2, the sliced battery is preferably 1/3 slices, and can also be 1/2, 1/4, 1/5, 1/6 slices or other sizes of batteries. With the more times of cutting, the higher output power advantage is provided under the condition that the shielding area is smaller, and the power loss caused by shielding of the battery can be effectively reduced.
Further, the photovoltaic module in this embodiment is provided with M photovoltaic module regions, where M is greater than or equal to 3, that is, more than 3 regions, for example, the multi-cut multi-parallel photovoltaic module may be 2-cut-3-parallel, 3-cut-4-parallel, 3-cut-5-parallel, or the like, or may be 4-cut-4-parallel, 5-cut-5-parallel, or the like. The more parallel areas of the photovoltaic module composed of the same slice of battery are, the larger the output power of the module battery is, and the larger the generated energy is.
Furthermore, the monolithic cell may be a monolithic monocrystalline silicon cell or a monolithic polycrystalline silicon cell.
Preferably, the whole battery is a standard whole battery, and may be other non-standard ones.
Further, each photovoltaic module region includes N cell strings, where N is greater than or equal to 1, that is, the photovoltaic module region of the present embodiment includes at least 2 cell sub-strings, that is, one cell string, corresponding to the situation of being connected in anti-parallel with one bypass diode, and for example, when N is 2, the photovoltaic module region of the present embodiment includes four cell sub-strings, that is, two cell strings, and each cell string is connected in anti-parallel with two different bypass diodes, respectively.
Further, the photovoltaic module area M is 3 or the photovoltaic module area M is 4.
Referring to fig. 2, when M is 3, the bypass diode is between the photovoltaic module region located in the middle and the photovoltaic module region located at the edge; specifically, when the photovoltaic module regions are region 1, region 2 and region 3, the region 1 and region 3 are two edge regions, and the region 2 is a middle region, so that the bypass diode is located between the region 1 and the region 2, and may also be located between the region 3 and the region 2.
Referring to fig. 3, when M is 4, the bypass diode is between two centrally located photovoltaic module regions; specifically, the photovoltaic module regions are region 1, region 2, region 3 and region 4, the regions 1 and 4 are edge regions, and the regions 2 and 3 are middle regions, so that the bypass diode is located at a position between the regions 2 and 3.
In the photovoltaic module area which is not adjacent to the bypass diode, the common bus bar of the adjacent cell strings is electrically connected with the bypass diode; specifically, when the photovoltaic module region is region 1, region 2 and region 3, region 1 and region 3 are two edge regions, region 2 is a middle region, and assuming that the bypass diode is located at a position between region 1 and region 2, region 3 is not adjacent to the bypass diode, then in region 3, adjacent cell strings are connected by the bus bar and share the same bus bar, and through the bus bar, the adjacent cell strings are electrically connected with the corresponding bypass diodes respectively, where the electrical connection is through the bus bar.
Furthermore, the number of the sliced batteries contained in each battery sub-string is X, wherein X is more than or equal to 8 and less than or equal to 20, and the number is determined according to the actual application requirements.
Further, each battery sub-string comprises a plurality of sliced batteries which are connected in series, specifically, the positive electrode of each sliced battery is electrically connected with the negative electrode of the last sliced battery, or the negative electrode of each sliced battery is electrically connected with the positive electrode of the last sliced battery.
Further, in the battery sub-string, the sliced batteries are connected in series through a conductive adhesive tape or a metal interconnection strip.
Specifically, the positive electrode of each sliced battery is connected with the negative electrode of the last sliced battery through a conductive adhesive tape or a metal interconnection bar, or the negative electrode of each sliced battery is connected with the positive electrode of the last sliced battery through a conductive adhesive tape or a metal interconnection bar, and it should be noted that the metal interconnection bar is preferably a tin-plated metal interconnection bar; the connection is not limited to a conductive tape or a metal interconnection strip, but may be other conductive media.
Furthermore, the battery string is formed by connecting two battery sub-strings with opposite extension directions in series.
Specifically, the solder strip connection directions of the two battery sub-strings are arranged in opposite directions, for example: the two battery substrings are respectively a first substring and a second substring, and in the first substring, along the direction from top to bottom, the front electrode of the upper cut battery is connected with the back electrode of the lower cut battery; in the second sub-string, the back electrode of the previous slice cell is connected with the front electrode of the next slice cell along the top-to-bottom direction, that is, the front electrode of the next slice is connected with the back electrode of the previous slice cell along the bottom-to-top direction.
Further, two of the battery sub-strings in each of the battery strings are connected in series by a bus bar.
Specifically, the top ends of two battery sub-strings in each battery string are connected with the positive electrode and the negative electrode through bus bars, for example: the two battery substrings are respectively a first substring and a second substring, and the negative pole or the positive pole at the top end of the first substring is connected with the positive pole or the negative pole at the top end of the second substring through the bus bar, so that the series connection of the first substring and the second substring is completed, and the series connection is electrically connected in a bus bar mode.
Further, each of the cell strings is connected in anti-parallel to both ends of each of the bypass diodes through bus bars.
Specifically, for example: the assembly includes three battery strings, with the anode of each battery string connected to the cathode of each bypass diode by a bus bar, while the cathode of each battery string is connected to the anode of each bypass diode.
Further, the N battery strings are connected in series through the bus bars to form a battery loop.
Specifically, for example: the assembly comprises three battery strings, wherein the positive electrodes and the negative electrodes of the three battery strings are sequentially connected in series through bus bars, and the two ends of each bus bar are respectively the positive electrode and the negative electrode of the battery of the photovoltaic assembly.
Further, this embodiment photovoltaic module still includes N terminal boxes, N bypass diode sets up respectively in N terminal boxes.
Specifically, the junction box is generally disposed on a back plate of the photovoltaic module, a hole is formed in the back plate corresponding to the junction box, the bus bar passes through the hole and is connected to the junction box, and positive and negative cables of the photovoltaic module are led out from the junction box. A bypass diode is arranged in the junction box and is connected with a bus bar connected into the junction box in series.
Further, the first direction is parallel to a long side of the photovoltaic module.
Specifically, the arrangement mode of parallel connection between M photovoltaic module regions is arranged along the long side direction of the photovoltaic module, for example: the photovoltaic module is four in area, namely area 1, area 2, area 3 and area 4, after area 2 and area 3 are connected in parallel, area 1 and area 4 are connected in parallel, and only can be arranged along the direction of the long edge of the photovoltaic module, namely area 1 is arranged on the upper portion of area 2, and area 4 is arranged on the lower portion of area 3. The circuit of the arrangement mode is regular and beautiful.
It should be noted that the N cell strings are sequentially arranged at intervals along the second direction, and the first direction is perpendicular to the second direction, that is, the N cell strings are sequentially arranged at intervals along the direction of the short side of the photovoltaic module.
Further, M is 3, the sliced battery is 1/3 slices of the whole battery, and the number X of the sliced batteries is equal to 12.
In order to further understand the photovoltaic module provided in the present application, a preferred embodiment, that is, a 3-by-3 photovoltaic module, is described as an example, and specifically shown in fig. 2:
this 3 cut 3 photovoltaic module includes:
the photovoltaic module comprises 3 bypass diodes and 3 photovoltaic module areas, wherein the 3 photovoltaic module areas are sequentially arranged along the direction of the long side of the photovoltaic module;
each photovoltaic module area comprises 3 cell strings, the 3 cell strings are sequentially arranged along the direction of the short side of the photovoltaic module, the 3 cell strings respectively correspond to the 3 bypass diodes, each cell string is connected with two ends of each bypass diode in an anti-parallel mode, and the 3 cell strings are connected with each other in series;
each of the battery strings comprises 24 sliced batteries connected in series with each other, the sliced batteries are 1/3 slices of whole batteries;
the cell strings of the same column in each photovoltaic module area share the same bypass diode.
Specifically, 3 bypass diodes are respectively D4, D5 and D6, 3 photovoltaic regions are respectively region 1, region 2 and region 3, each cell sub-string comprises 12 sliced cells, each photovoltaic module region is formed by connecting 72 1/3 sliced cells in series, 3 photovoltaic module regions share 3 bypass diodes, each diode is connected with 3 cell strings in parallel in a circuit, as shown in fig. 2, after the cell strings of the region 2 and the region 3 are connected in parallel, the cell string of the region 1 is connected in parallel with the region 2 and the region 3 which are connected in parallel in sequence through the bus bar 204, the bus bar 205, the bus bar 206 and the bus bar 207, so as to realize the parallel connection of 3 photovoltaic module regions, here, the first column and the second column of the battery string in the region 1 share the bus bar 205, and the second column and the third column of the battery string share the bus bar 206.
The 1/3 slices in the embodiment are cut in a direction perpendicular to the main grid line of the whole battery, and the positive electrode or the negative electrode of each of the 12 sliced batteries in each battery sub-string is connected with the negative electrode or the positive electrode of the last sliced battery through a conductive adhesive tape or a metal interconnection strip. As shown in fig. 4, which is a cross-sectional view of a connection of a certain battery sub-string in fig. 2, the positive electrode of the sliced battery 100 is connected to the negative electrode of the sliced battery 101 through the conductive tape (or metal interconnection strip) 11, the positive electrode of the sliced battery 101 is connected to the negative electrode of the sliced battery 102 through the conductive tape (or metal interconnection strip) 10, and so on, and the sliced batteries in each battery sub-string are electrically connected back and forth in this way.
Furthermore, two battery sub-strings in each battery string are connected in series through a bus bar, each battery string is connected in anti-parallel to two ends of each bypass diode through the bus bar, and 3 battery strings are connected in series through the bus bar and form a battery loop.
As shown in fig. 10, which is a schematic diagram of a position of a 3-cut 3-parallel assembly junction box according to an embodiment of the present invention, a photovoltaic assembly in this embodiment has 3 junction boxes, a bypass diode D4 is disposed in the junction box 11, a bypass diode D5 is disposed in the junction box 12, and a bypass diode D5 is disposed in the junction box 13, it should be noted that 3 battery strings are connected in series through bus bars to form a battery circuit, where the bus bars are connected to the junction box, then a positive pole of the battery circuit is led out from the junction box 11, and a negative pole of the battery circuit is led out from the junction box 13.
The 3-cut 3-photovoltaic module in this embodiment is, as shown in fig. 5, a schematic diagram of bottom row cell shielding of a conventional half-module, and as shown in fig. 6, a schematic diagram of bottom row cell shielding of a 3-cut module provided in this embodiment of the present invention, when a whole bottom row shielding of a monolithic module or a module array occurs, the 3-cut 3-photovoltaic module can effectively improve the power generation amount when a horizontal row shielding occurs in the monolithic module or the module array.
Specifically, as for the monolithic module, as shown in fig. 5 and fig. 6, the schematic current paths of the two modules after bottom row shielding is simplified into fig. 11 and fig. 12, where fig. 11 is a schematic current distribution diagram of bottom row battery shielding of a conventional half-chip module, fig. 12 is a schematic current distribution diagram of bottom row battery shielding of a 3-cut module provided in the embodiment of the present invention, current of an 1/3-cut module loses one branch, and the current becomes 2/3, and after one branch of current is lost, the current becomes 1/2. Because the whole row of batteries of the assembly are completely shielded and the shielded whole row of batteries cannot flow charges, the whole row of batteries can be equivalently connected in parallel with two ends of other batteries which are not shielded, the output voltage of the assembly keeps changed, the diode cannot be conducted, and because the number of the batteries of each battery sub-string of the two assemblies is the same, the voltage of the assembly is the same, the power of the assembly is reduced to 2/3 when the assembly is not shielded by 3-cutting, and the power of a conventional half-sheet assembly is reduced to 1/2 when the assembly is not shielded.
Therefore 3-cut components have advantages over the power output; meanwhile, when the bottom row shielding or bottom multi-row shielding of all the assemblies or a plurality of assemblies in the assembly array is obtained by software simulation analysis, the 3-cutting-3-combining assembly also has the advantage of reducing power loss.
Specifically, software is used to model the two component arrays and perform simulation analysis on the shielding situation, and an output power comparison diagram shown in fig. 9, which is a comparison diagram of the output power shielded by the conventional half-chip component array and the 3-cut 3-parallel component array bottom-row battery, is obtained. Fig. 9 shows the number of components occluded in 22 component arrays on the abscissa and the output power of the component arrays on the ordinate. When 6 assemblies are shielded by the 3-cut-3 parallel assembly array, the output power of the 3-cut-3 parallel assembly array is superior to that of the conventional half-sheet assembly array, when all the bottom batteries of the assemblies in the array are shielded, the output power of the 3-cut-3 parallel assembly array is 5605W which is 66% of the normal output power, and the output power of the conventional half-sheet assembly array is 4196W which is 50.3% of the normal output power. Therefore, when the bottom row batteries are completely shielded, the power output of the 3-cut combined assembly is improved by 16% compared with the power output of the conventional half-chip assembly.
In the embodiment, the 3-cut-3-photovoltaic module, for example, fig. 7 is a schematic diagram of a conventional half-sheet module monolithic battery shielding, and fig. 8 is a schematic diagram of a 3-cut-3-photovoltaic module monolithic battery shielding provided in the embodiment of the present invention, when a small area shielding occurs in a monolithic module or a module array, power loss caused by the small area battery shielding in the monolithic module or the module array can be effectively reduced, so that a risk of battery damage due to too high power consumption is reduced.
Specifically, the reason for the power loss of the shielded sliced battery is that the unshielded sliced battery and the diode act together to generate negative pressure at two ends of the shielded sliced battery, the negative pressure is the reason for the power consumption of the shielded sliced battery, and the product of the negative pressure and the current flowing through the battery is the power value consumed by the battery.
Since the maximum current of the 1/3 slice assembly which can flow through the shielding slice battery is smaller than that of the 1/2 slice assembly, and the negative pressure generated when the two assemblies are shielded is almost the same, compared with 1/3, the power consumption generated when the slice assembly is shielded is lower, and because the heat dissipation path and conditions between the batteries are almost the same, the 3-cut assembly provided by the embodiment has the advantage that the risk of damaging the shielding slice battery due to overhigh power consumption is further reduced.
In the present embodiment, 3-cut 3-parallel assembly is adopted, as a preferred embodiment, since the existing laminated assembly adopts 1/5 sliced cells or 1/6 sliced cells, the sliced cells are obtained by laser cutting of the whole cells, but the laser-cut sliced cells have different damage at the edge of the cutting position, which affects the photoelectric conversion efficiency of the cells, while the 1/3 slice proposed in the present embodiment has a cutting frequency less than that of the sliced cells of the laminated assembly, compared with the laminated assembly in the prior art, the cutting damage degree is lower than that of the laminated assembly, which improves the photoelectric conversion efficiency of the cells, and meanwhile, the less cutting frequency also reduces the complexity of production and improves the production efficiency of the cells.
It should be noted that, for a photovoltaic module formed by a sliced battery with a cutting frequency greater than 3, although there is no beneficial effect brought by a small cutting frequency, the photovoltaic module is subjected to analog simulation, and compared with the existing half-sheet module or laminated module, the photovoltaic module still can effectively improve the generated energy when a single photovoltaic module or a photovoltaic module array is shielded in a whole row, and can also effectively reduce the power loss when a small-area shielding occurs.
It should be noted that, for the descriptions of the same steps and the same contents in this embodiment as those in other embodiments, reference may be made to the descriptions in other embodiments, which are not described herein again.
In addition to the above 3-cut 3-combined module embodiment, another 3-cut 4-combined module embodiment is provided, as shown in fig. 3, which is a schematic circuit diagram of a 3-cut 4-combined module according to an embodiment of the present invention, unlike the 3-cut 3-combined module embodiment, the 3-cut 4-combined photovoltaic module includes 4 photovoltaic module regions, and the 4 photovoltaic module regions are sequentially arranged along the direction of the long side of the photovoltaic module; the 4 photovoltaic regions are respectively a region 1, a region 2, a region 3 and a region 4, the 4 photovoltaic module regions share 3 bypass diodes, each diode is connected in parallel with 4 cell strings in a circuit, after the cell strings of the region 2 and the region 3 are connected in parallel, the cell string of the region 1 is connected in parallel with the region 2 and the region 3 which are connected in parallel in sequence through a bus bar 204, a bus bar 205, a bus bar 206 and a bus bar 207, the cell string of the region 4 is connected in parallel with the region 1, the region 2 and the region 3 which are connected in parallel in sequence through a bus bar 208, a bus bar 209, a bus bar 210 and a bus bar 211, the parallel connection of the 4 photovoltaic module regions is realized, and it is required to be noted that, here, the first column of cell string and the second column of cell string in the region 1 share the bus bar 205, the second column of cell string and the third column of cell string share the bus bar 206, the first column of cell string and the second column of cell string in the region 4 share the bus bar 209, the second column battery string and the third column battery string share the bus bar 210.
Compared with a 3-cut-4 assembly, the 3-cut-3 assembly has the advantages of power output when the bottom row battery is shielded, and further reduces the risk that the shielded sliced battery is damaged due to overhigh consumed power when small-area shielding occurs.
It should be noted that, for the descriptions of the same steps and the same contents in this embodiment as those in other embodiments, reference may be made to the descriptions in other embodiments, which are not described herein again.
The invention also provides an embodiment of the assembly string, which comprises a plurality of photovoltaic assemblies connected in series, wherein each photovoltaic assembly is any one of the photovoltaic assemblies provided by the above embodiments of the invention.
Specifically, the module string is a group of modules connected in series in the module array, the photovoltaic modules described in the above embodiments may be used as each module in the module string, preferably, the number of the photovoltaic modules in the module string is 6 to 22, and of course, the number of the photovoltaic modules may be other numbers, which is not limited herein.
The actual test of the output power is carried out on the shielding condition of the assembly string consisting of a plurality of multi-parallel photovoltaic assemblies, so that the output power of the multi-cut multi-parallel assembly string is more advantageous than that of a conventional half-piece assembly string under the condition of lower shielding quantity; as the number of occlusions increases, the output power of the multi-cut multi-parallel assembly string is always greater than that of the conventional half-sheet assembly string.
The above description is only a preferred embodiment of the application and is illustrative of the principles of the technology employed. It will be appreciated by a person skilled in the art that the scope of the invention as referred to in the present application is not limited to the embodiments with a specific combination of the above-mentioned features, but also covers other embodiments with any combination of the above-mentioned features or their equivalents without departing from the inventive concept. For example, the above features may be replaced with (but not limited to) features having similar functions disclosed in the present application.

Claims (9)

1. A photovoltaic module, comprising:
n bypass diodes and M photovoltaic module areas, wherein N is more than or equal to 1, and M is more than or equal to 3; the M photovoltaic module areas are sequentially arranged along a first direction;
each photovoltaic module area comprises N cell strings, and the N cell strings are sequentially arranged at intervals along a second direction; the first direction is perpendicular to the second direction; the N battery strings correspond to the N bypass diodes respectively, each battery string is connected with two ends of each bypass diode in an anti-parallel mode, and the N battery strings are connected in series;
each battery string comprises a plurality of sliced batteries which are connected in series, wherein the sliced batteries are 1/R slices of the whole battery, and R is more than or equal to 2;
the battery strings at the same arrangement position in each photovoltaic module area share the same bypass diode;
when M is 3 or 4, the bypass diode is located between the photovoltaic module region located in the middle and the photovoltaic module region located at the edge; when M is 4, the bypass diode is positioned between two photovoltaic module areas positioned in the middle;
in the photovoltaic module region not adjacent to the bypass diode, the common bus bar of the adjacent cell strings is electrically connected with the bypass diode.
2. The photovoltaic module of claim 1, wherein the string of cells is formed by serially connecting two sub-strings of cells extending in opposite directions.
3. The photovoltaic module according to claim 2, wherein the number of the sliced cells contained in each cell sub-string is X, wherein X is greater than or equal to 8 and less than or equal to 20.
4. A photovoltaic module according to claim 3, wherein M-3, the sliced cells are 1/3 slices of whole cells, and the number X of sliced cells is equal to 12.
5. A photovoltaic module according to claim 2, wherein the diced cells are connected in series in the cell sub-string by conductive tape or metal interconnection strips.
6. A photovoltaic module according to claim 2, wherein the two cell sub-strings in each cell string are connected in series by a bus bar.
7. A photovoltaic module according to claim 1, characterized in that the first direction is parallel to the long side of the photovoltaic module.
8. An assembly string, characterized by comprising a plurality of photovoltaic assemblies connected in series, wherein the photovoltaic assemblies are the photovoltaic assemblies according to any one of claims 1 to 7.
9. The assembly string according to claim 8, wherein the number of photovoltaic assemblies in the assembly string is 6-22.
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Publication number Priority date Publication date Assignee Title
CN110459637A (en) * 2019-09-18 2019-11-15 天合光能股份有限公司 A kind of novel slice photovoltaic module
CN113517369A (en) * 2020-04-10 2021-10-19 苏州阿特斯阳光电力科技有限公司 Photovoltaic module
CN114388641B (en) * 2021-11-03 2023-06-23 浙江晶科能源有限公司 Photovoltaic module and photovoltaic module array

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN206742256U (en) * 2016-09-30 2017-12-12 晶澳（扬州）太阳能科技有限公司 A kind of low energy consumption solar cell module
CN207834325U (en) * 2018-03-09 2018-09-07 天合光能股份有限公司 A kind of half photovoltaic cell component of full tandem type
CN108615777A (en) * 2018-06-15 2018-10-02 浙江晶科能源有限公司 Photovoltaic module
CN208411060U (en) * 2018-06-04 2019-01-22 浙江宝利特新能源股份有限公司 A kind of more main grid cell piece stacked wafer moudle printing screen plates of MBB
CN109713066A (en) * 2019-01-09 2019-05-03 泰州隆基乐叶光伏科技有限公司 A kind of photovoltaic module

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN206742256U (en) * 2016-09-30 2017-12-12 晶澳（扬州）太阳能科技有限公司 A kind of low energy consumption solar cell module
CN207834325U (en) * 2018-03-09 2018-09-07 天合光能股份有限公司 A kind of half photovoltaic cell component of full tandem type
CN208411060U (en) * 2018-06-04 2019-01-22 浙江宝利特新能源股份有限公司 A kind of more main grid cell piece stacked wafer moudle printing screen plates of MBB
CN108615777A (en) * 2018-06-15 2018-10-02 浙江晶科能源有限公司 Photovoltaic module
CN109713066A (en) * 2019-01-09 2019-05-03 泰州隆基乐叶光伏科技有限公司 A kind of photovoltaic module

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