CN110164999A - A method of circular polarization photogenerated current flow in regulation selenizing bismuth thin film - Google Patents
A method of circular polarization photogenerated current flow in regulation selenizing bismuth thin film Download PDFInfo
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- 230000010287 polarization Effects 0.000 title claims abstract description 53
- 229910052797 bismuth Inorganic materials 0.000 title claims abstract description 31
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 239000010409 thin film Substances 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 25
- 230000033228 biological regulation Effects 0.000 title claims abstract description 22
- 230000005284 excitation Effects 0.000 claims abstract description 31
- 239000010408 film Substances 0.000 claims abstract description 19
- 230000005533 two-dimensional electron gas Effects 0.000 claims abstract description 19
- FBGGJHZVZAAUKJ-UHFFFAOYSA-N bismuth selenide Chemical compound [Se-2].[Se-2].[Se-2].[Bi+3].[Bi+3] FBGGJHZVZAAUKJ-UHFFFAOYSA-N 0.000 claims description 26
- 239000010931 gold Substances 0.000 claims description 11
- 238000012360 testing method Methods 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 claims description 4
- 229910052712 strontium Inorganic materials 0.000 claims description 4
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000001727 in vivo Methods 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 abstract description 6
- 206010000234 Abortion spontaneous Diseases 0.000 abstract description 5
- 208000015994 miscarriage Diseases 0.000 abstract description 5
- 208000000995 spontaneous abortion Diseases 0.000 abstract description 5
- 230000007704 transition Effects 0.000 description 13
- 239000012212 insulator Substances 0.000 description 10
- 230000008859 change Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 238000004590 computer program Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 3
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- 240000007594 Oryza sativa Species 0.000 description 1
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- 238000007634 remodeling Methods 0.000 description 1
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- 235000009566 rice Nutrition 0.000 description 1
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Abstract
The present invention relates to a kind of methods of circular polarization photogenerated current flow in regulation selenizing bismuth thin film to realize the regulation to circular polarization photogenerated current flow in selenizing bismuth thin film especially by the wavelength for changing exciting light from near-infrared to far infrared band.This is because existing simultaneously surface state and two-dimensional electron gas in selenizing bismuth thin film, the circularly polarized light sense of current that they are generated is opposite.When exciting light is the light of near infrared band, surface state and two-dimensional electron gas can all send a telegraph the raw contribution of miscarriage to circularly polarized light, and theirs is contrary, can offset each other.When the light that exciting light is far infrared band, and the energy of the exciting light is less than when Rashba spin-spin splitting energy, circular polarization photogenerated current flow at this moment is mainly from surface state, the contribution very little of Two-dimensional electron gaseous state in film.To which the case where excitation compared near infrared light, circular polarization photogenerated current flow at this time is obviously improved.Regulating effect of the present invention is significant, simple and easy, low in cost, is conducive to promote and apply in the future.
Description
Technical field
The present invention relates to polarized light current regulation and control field, circular polarization photogenerated current flow in especially a kind of regulation selenizing bismuth thin film
Method.
Background technique
Three-dimensional topology insulator has very strong Quantum geometrical phase effect, and therefore, they have in area of Spintronics
There is good application prospect.Studies have shown that bismuth selenide is a kind of three-dimensional topology insulator, and its band structure is relatively simple,
Band gap is larger, to get more and more people's extensive concerning.Circular polarization photogenerated current flow is a kind of having for research material Quantum geometrical phase
Effect means, and its test equipment is simple, room temperature can test under zero magnetic field.In addition, it is also development of new spin photoelectron device
The powerful of part.To sum up, stream is sent a telegraph to the circularly polarized light of three-dimensional topology insulator bismuth selenide effectively to be regulated and controled, it is right
It is had a very important significance in the spin opto-electronic device for designing and producing novel.
Change currently, sending a telegraph the method that stream is regulated and controled to the circularly polarized light of three-dimensional topology insulator bismuth selenide and mainly passing through
Temperature is realized.However, this method to the regulation amplitude of the circular polarization photogenerated current flow of three-dimensional topology insulator bismuth selenide compared with
It is small.
Summary of the invention
In view of this, the purpose of the present invention is to propose to a kind of method of circular polarization photogenerated current flow in regulation selenizing bismuth thin film,
Regulating effect is significant, simple and easy, low in cost, is conducive to promote and apply in the future.
The present invention is realized using following scheme: a method of circular polarization photogenerated current flow in regulation selenizing bismuth thin film, specifically
Wavelength by changing exciting light realizes the tune to circular polarization photogenerated current flow in selenizing bismuth thin film from near-infrared to far infrared band
Control.
Preferably, surface state and two-dimensional electron gas are existed simultaneously in selenizing bismuth thin film, the circularly polarized light electric current that they are generated
Direction be opposite.When exciting light is the light of near infrared band, surface state and two-dimensional electron gas all can be photic to circular polarization
Electric current generates contribution, and theirs is contrary, can offset each other.When the light that exciting light is far infrared band, and the excitation
When the energy of light is less than Rashba spin-spin splitting energy in film, circular polarization photogenerated current flow at this moment is mainly from surface state, two dimension
The gaseous contribution very little of electronics.To which the case where excitation compared near infrared light, circular polarization photogenerated current flow at this time, which has, significantly to be mentioned
It rises.
Further, measuring selenizing bismuth thin film is with molecular beam outer technology growth on the strontium titanates substrate of face；Institute
The bismuth selenide film sample used is mono-crystalline structures；Used bismuth selenide film sample is that N-shaped is conductive, and fermi level enters
There is two-dimensional electron gas in conduction band, and Rashba spin-spin splitting energy existing for two-dimensional electron gas is greater than 0.18eV in vivo；Wherein,
The test temperature of sample is room temperature.
Further, the wavelength of used near-infrared excitation light is 1064 nanometers.
Further, the wavelength of used far infrared exciting light is 10.6 microns.
Further, the bismuth selenide film sample with a thickness of 7 nanometers；The size of the bismuth selenide film sample is 2
×5mm2；The electron mobility of selenizing bismuth thin film lower surface state is much smaller than surface states；On the bismuth selenide film sample
Electrode be Ti/Au electrode, the thickness of Ti is 10 nanometers, gold with a thickness of 100 nanometers；Ti/Au electrode radius is the circle of 0.5mm
Electrode, electrode spacing 1mm.
Further, the power of the near-infrared excitation light and far infrared exciting light is in 30-250mW；The near-infrared swashs
Luminous power stability is that the power swing in four hours is no more than 1%；Wherein, near-infrared excitation light and far infrared excitation
Light beats the circular light spot that the spot size on sample is diameter 0.8mm, and spot intensity is Gaussian Profile.
Compared with prior art, the invention has the following beneficial effects:
1, the method for the circular polarization photogenerated current flow of this regulation three-dimensional topology insulator bismuth selenide provided by the invention, very
It is simple and easy, it is low in cost, be conducive to promote and apply in the future.
2, the method for the circular polarization photogenerated current flow of this regulation three-dimensional topology insulator bismuth selenide provided by the invention, regulation
Effect is obvious, and modification scope is larger.
Detailed description of the invention
Fig. 1 is the experiment light path schematic diagram of the embodiment of the present invention.
Fig. 2 is the photoelectric current of the use 1064 nanometer lasers excitation generation of the embodiment of the present invention with quarter-wave plate corner
Change curve, formula fitting curve and fitting obtained circular polarization photogenerated current flow, linear polarization photogenerated current flow and background current.
Incidence angle is -30 degree.
Fig. 3 is the circular polarization photogenerated current flow of the use 1064 nanometer lasers excitation generation of the embodiment of the present invention with incidence angle
Variation relation figure.
Fig. 4 is the circular polarization photogenerated current flow of the use 10.6 mum lasers excitation generation of the embodiment of the present invention with incidence angle
Variation relation figure.
Fig. 5 sends a telegraph the raw original of miscarriage for the circularly polarized light under 1064 nanometers of the embodiment of the present invention and the excitation of 10.6 mum lasers
Reason figure.The wherein energy level transition inside 1 two-dimensional electron gas generated for the excitation of 1064 nm wavelength lasers, 2 be 1064 nanometer waves
For the two-dimensional electron gas that long laser excitation generates to the energy level transition of second surface state dirac vertebra, 3 be 1064 nm wavelength lasers
Excite the first surface state dirac vertebra generated to the energy level transition of second surface state dirac vertebra, 4 be that 10.6 micron wave lengths swash
Energy level transition of the first dirac vertebra that light excitation generates to posture.Therein 1/2, -1/2,3/2, -3/2 indicates different energy bands
The angular quantum number of electronics.
Specific embodiment
The present invention will be further described with reference to the accompanying drawings and embodiments.
It is noted that described further below be all exemplary, it is intended to provide further instruction to the application.Unless another
It indicates, all technical and scientific terms used herein has usual with the application person of an ordinary skill in the technical field
The identical meanings of understanding.
It should be noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singular
Also it is intended to include plural form, additionally, it should be understood that, when in the present specification using term "comprising" and/or " packet
Include " when, indicate existing characteristics, step, operation, device, component and/or their combination.
Present embodiments provide it is a kind of regulation selenizing bismuth thin film in circular polarization photogenerated current flow method, pass through change exciting light
Wavelength from near-infrared to far infrared band, realize regulation to circular polarization photogenerated current flow in selenizing bismuth thin film.
In the present embodiment, measuring selenizing bismuth thin film is with molecular beam outer technology growth in face strontium titanates substrate
On；Used bismuth selenide film sample is mono-crystalline structures；Used bismuth selenide film sample is conductive for N-shaped, and Fermi's energy
Grade enters conduction band, there is two-dimensional electron gas in vivo, and Rashba spin-spin splitting energy existing for two-dimensional electron gas is greater than 0.18eV；
Wherein, the test temperature of sample is room temperature.
In the present embodiment, the wavelength of used near-infrared excitation light is 1064 nanometers.
In the present embodiment, the wavelength of used far infrared exciting light is 10.6 microns.
In the present embodiment, the bismuth selenide film sample with a thickness of 7 nanometers；The size of the bismuth selenide film sample
For 2 × 5mm2；The electron mobility of selenizing bismuth thin film lower surface state is much smaller than surface states；The bismuth selenide film sample
On electrode be Ti/Au electrode, the thickness of Ti is 10 nanometers, gold with a thickness of 100 nanometers；Ti/Au electrode radius is the circle of 0.5mm
Shape electrode, electrode spacing 1mm.
In the present embodiment.The power of the near-infrared excitation light and far infrared exciting light is in 30-250mW；It is described close red
The power stability of outer exciting light is that the power swing in four hours is no more than 1%；Wherein, near-infrared excitation light and far infrared
Exciting light beats the circular light spot that the spot size on sample is diameter 0.8mm, and spot intensity is Gaussian Profile.
Specifically, next providing the specific implementation process of the present embodiment.
Firstly, the present embodiment uses the bismuth selenide for growing 7 nano thickness on strontium titanates substrate with molecular beam epitaxial device
Film.The size of selenizing bismuth thin film is 2 × 5mm2.Then, a pair of Ti/Au electrode, electrode size are grown on selenizing bismuth thin film
For the circular electrode of radius 0.5mm, electrode spacing 1mm.Ti electrode with a thickness of 10nm, Au electrode with a thickness of 100nm.It adopts
With optical system for testing shown in FIG. 1, the laser for allowing laser to come out passes sequentially through chopper, the polarizer, quarter-wave plate, then
Beat the midpoint of two electrode connecting lines on sample.The diameter of hot spot is 0.8mm, and spot intensity is distributed as Gaussian Profile.Laser enters
Firing angle is denoted as θ.
Laser is beaten on sample, is excited and is generated photoelectric current on sample.This photoelectric current enters current amplifier and amplifies,
Then lock-in amplifier is entered back into amplify.The reference signal of lock-in amplifier comes from chopper.It at this is cut in embodiment
The working frequency of wave device is 229Hz.Experiment test temperature is room temperature.
In the present embodiment, first using the laser of 1064nm as exciting light, the power of laser is 250mW.Laser
Power stability is preferable, is that the power swing in four hours is no more than 1%.The present embodiment will change the incidence angle of light from 30 degree
To -30 degree, step-length is 10 degree.Under each incidence angle, quarter-wave plate is rotated from 0 degree to 360 degree, and step-length is 5 degree.It is logical
The data collecting card for crossing computer records photoelectric current under each quarter-wave plate corner.It is drawn with origin software a certain
Under a incidence angle photoelectric current with quarter-wave plate corner curve graph, as shown in Figure 2.The corresponding incidence angle of Fig. 2 is -30 degree.
Data are fitted using following formula (1):
J=Csin (2 α)+L1sin(4α)+L2cos(4α)+j0Formula (1)
In formula, C indicates the circular polarization photogenerated current flow that circularly polarized light excitation generates, L1And L2It indicates to be excited by linearly polarized light and produce
Raw linear polarization photogenerated current flow, j0Indicate the background current as caused by photovoltaic effect, pyroelectric effect etc..In matched curve such as Fig. 2
It is shown in solid.It can be obtained by circular polarization photogenerated current flow C, linear polarization photogenerated current flow L by fitting1And L2And background current
j0.This sample embodiment can measure when incidence angle from 30 degree change to -30 spend when circular polarization photogenerated current flow, as shown in Figure 3.Figure
Circular polarization photogenerated current flow in 3 is normalized with optical power, i.e. circular polarization photogenerated current flow is divided by optical power.According to only
As theory, the circular polarization photogenerated current flow in bismuth selenide can be described with the variation relation of incidence angle with following formula (2):
In formula, θ is incidence angle, and n is the refractive index of topological insulator bismuth selenide, and A is fitting parameter.The present embodiment formula
(2) the circular polarization photogenerated current flow of 1064 nanometer lasers excitation is fitted with the variation relation of incidence angle, fitting result such as Fig. 3
In it is shown in solid.As it can be seen that fitting result is preferable.It can be seen in figure 3 that when incidence angle is 30 degree, the excitation of 1064 nanometer lasers
Circularly polarized light size of current be about 30pA/W.
Then, the present embodiment changes exciting light into CO that wavelength is 10.6 microns2Laser.Correspondingly, in Fig. 1 optical path
The polarizer and quarter-wave plate will also change 10.6 micron wavebands into.CO2The laser power that laser is beaten on sample is
35mW.The incidence angle of sample is changed to -30 degree, step-length 10 by the situation under similar 1064 nanometers of excitations, the present embodiment from 30 degree
Degree.Under each incidence angle, quarter-wave plate is rotated from 0 degree to 360 degree, step-length is 5 degree.Record each four/
Photoelectric current under one wave plate corner.Then, it is fitted by using formula (1), obtains the circular polarization under some incidence angle
Photogenerated current flow.In this way, the present embodiment it is available when incidence angle from 30 degree change to -30 spend when circular polarization photogenerated current flow, such as Fig. 4
It is shown.The circular polarization photogenerated current flow of Fig. 4 has also been normalized with optical power, i.e., circular polarization photogenerated current flow divided by
Optical power.Then, the present embodiment is sent a telegraph electric current to the circularly polarized light under different incidence angles with formula (2) and is fitted, and fitting is bent
It is shown in solid in line such as Fig. 4, it is seen that fitting result is preferable.From fig. 4, it can be seen that 10.6 microns are swashed when incidence angle is 30 degree
Light activated circular polarization photogenerated current flow size is about 400pA/W, an amount bigger than the circular polarization photogenerated current flow of 1064nm excitation
Grade.Show through the wavelength of change exciting light from near-infrared to far infrared band, may be implemented to circular polarization in selenizing bismuth thin film
The a wide range of regulation of photogenerated current flow.
Why can using it is this become excitation wave band method to circularly polarized light send a telegraph stream regulated and controled on a large scale, be because
To exist simultaneously surface state and two-dimensional electron gas in selenizing bismuth thin film, the circularly polarized light sense of current that they are generated is opposite
's.In addition, the electron mobility of the lower surface state of the sample as used by the present embodiment is much smaller than surface states, following table
Face state can ignore the contribution of total circular polarization photogenerated current flow.At this time, it is only necessary to consider surface states and internal Two-dimensional electron
Gaseous state.According to the literature, there are two dirac vertebras, i.e. first surface state dirac vertebra and for the surface states of bismuth selenide
Two surface state dirac vertebras, their energy difference is about 1.5eV.Fig. 5 is that three-dimensional topology insulator selenizing bismuth thin film is received 1064
Circularly polarized light under rice and the excitation of 10.6 mum lasers sends a telegraph the raw schematic diagram of miscarriage.Wherein 1 excited for 1064 nm wavelength lasers
Energy level transition inside the two-dimensional electron gas of generation, 2 excite the two-dimensional electron gas generated to second for 1064 nm wavelength lasers
The energy level transition of surface state dirac vertebra, the 3 first surface state dirac vertebras generated for the excitation of 1064 nm wavelength lasers to the
The energy level transition of two surface state dirac vertebras, 4 be that the first dirac vertebra that 10.6 micron wave length laser excitations generate arrives posture
Energy level transition.Therein 1/2, -1/2,3/2, -3/2 indicates the angular quantum number of different Energy band electrons.When exciting light is close red
When the light of wave section, when such as 1064 nanometer lasers excite, surface state and two-dimensional electron gas can all send a telegraph miscarriage life to circularly polarized light
Contribution, and theirs is contrary, can offset each other.That is the circular polarization that the energy level transition as indicated by 1 generates in Fig. 5 is photic
Electric current can with 2,3 indicated by the circular polarization photogenerated current flow that generates of energy level transition it is contrary, to cancel out each other, therefore generate
Circular polarization photogenerated current flow it is smaller.When the light that exciting light is far infrared band, and the energy of the exciting light is less than in film
When Rashba spin-spin splitting energy, circular polarization photogenerated current flow at this moment is mainly from surface state, the contribution very little of Two-dimensional electron gaseous state.
In the present embodiment, the Rashba spin-spin splitting of two-dimensional electron gas can be about 0.18eV in selenizing bismuth thin film.And 10.6 microns are swashed
The corresponding photon energy of light is 0.17eV.This photon energy is less than the Rashba spin-spin splitting energy of two-dimensional electron gas, therefore, no
Electron transition in two-dimensional electron gas can be excited, so that two-dimensional electron gas will not send a telegraph the raw contribution of miscarriage to total circularly polarized light.This
When electronics of the circular polarization photogenerated current flow on surface states the first dirac vertebra to posture transition, as 4 in Fig. 5
Indicated energy level transition.To which the case where excitation compared near infrared light, circular polarization photogenerated current flow at this time, which has, significantly to be mentioned
It rises.
In summary it can be seen, it is provided in this embodiment it is a kind of regulate and control three-dimensional topology insulator bismuth selenide circularly polarized light send a telegraph
The method of stream, realization is more convenient, and at low cost, regulating effect is good.
It should be understood by those skilled in the art that, embodiments herein can provide as method, system or computer program
Product.Therefore, complete hardware embodiment, complete software embodiment or reality combining software and hardware aspects can be used in the application
Apply the form of example.Moreover, it wherein includes the computer of computer usable program code that the application, which can be used in one or more,
The computer program implemented in usable storage medium (including but not limited to magnetic disk storage, CD-ROM, optical memory etc.) produces
The form of product.
The application is referring to method, the process of equipment (system) and computer program product according to the embodiment of the present application
Figure and/or block diagram describe.It should be understood that every one stream in flowchart and/or the block diagram can be realized by computer program instructions
The combination of process and/or box in journey and/or box and flowchart and/or the block diagram.It can provide these computer programs
Instruct the processor of general purpose computer, special purpose computer, Embedded Processor or other programmable data processing devices to produce
A raw machine, so that being generated by the instruction that computer or the processor of other programmable data processing devices execute for real
The device for the function of being specified in present one or more flows of the flowchart and/or one or more blocks of the block diagram.
These computer program instructions, which may also be stored in, is able to guide computer or other programmable data processing devices with spy
Determine in the computer-readable memory that mode works, so that it includes referring to that instruction stored in the computer readable memory, which generates,
Enable the manufacture of device, the command device realize in one box of one or more flows of the flowchart and/or block diagram or
The function of being specified in multiple boxes.
These computer program instructions also can be loaded onto a computer or other programmable data processing device, so that counting
Series of operation steps are executed on calculation machine or other programmable devices to generate computer implemented processing, thus in computer or
The instruction executed on other programmable devices is provided for realizing in one or more flows of the flowchart and/or block diagram one
The step of function of being specified in a box or multiple boxes.
The above described is only a preferred embodiment of the present invention, being not that the invention has other forms of limitations, appoint
What those skilled in the art changed or be modified as possibly also with the technology contents of the disclosure above equivalent variations etc.
Imitate embodiment.But without departing from the technical solutions of the present invention, according to the technical essence of the invention to above embodiments institute
Any simple modification, equivalent variations and the remodeling made, still fall within the protection scope of technical solution of the present invention.
Claims (6)
1. a kind of method of circular polarization photogenerated current flow in regulation selenizing bismuth thin film, which is characterized in that by the wave for changing exciting light
Length realizes the regulation to circular polarization photogenerated current flow in selenizing bismuth thin film from near-infrared to far infrared band.
2. the method for circular polarization photogenerated current flow in a kind of regulation selenizing bismuth thin film according to claim 1, which is characterized in that
Measuring selenizing bismuth thin film is with molecular beam outer technology growth on the strontium titanates substrate of face；Used selenizing bismuth thin film sample
Product are mono-crystalline structures；Used bismuth selenide film sample is that N-shaped is conductive, and fermi level enters conduction band, there is two dimension in vivo
Electron gas, and Rashba spin-spin splitting energy existing for two-dimensional electron gas is greater than 0.18eV；Wherein, the test temperature of sample is room
Temperature.
3. the method for circular polarization photogenerated current flow in a kind of regulation selenizing bismuth thin film according to claim 1, which is characterized in that
The wavelength of used near-infrared excitation light is 1064 nanometers.
4. the method for circular polarization photogenerated current flow in a kind of regulation selenizing bismuth thin film according to claim 1, which is characterized in that
The wavelength of used far infrared exciting light is 10.6 microns.
5. the method for circular polarization photogenerated current flow in a kind of regulation selenizing bismuth thin film according to claim 1, which is characterized in that
The bismuth selenide film sample with a thickness of 7 nanometers；The size of the bismuth selenide film sample is 2 × 5 mm2；The bismuth selenide
The electron mobility of film lower surface state is much smaller than surface states；Electrode on the bismuth selenide film sample is Ti/Au electrode,
The thickness of Ti is 10 nanometers, and gold is with a thickness of 100 nanometers；Ti/Au electrode radius is the circular electrode of 0.5mm, and electrode spacing is
1mm。
6. the method for circular polarization photogenerated current flow in a kind of regulation selenizing bismuth thin film according to claim 1, which is characterized in that
The power of the near-infrared excitation light and far infrared exciting light is in 30-250mW；The power stability of the near-infrared excitation light is
Power swing in four hours is no more than 1%；Wherein, near-infrared excitation light and far infrared exciting light beat the hot spot on sample
Size is the circular light spot of diameter 0.8mm, and spot intensity is Gaussian Profile.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111289832A (en) * | 2020-03-27 | 2020-06-16 | 福州大学 | Measuring and changing three-dimensional topological insulator Bi2Te3Method for changing trend of circularly polarized light induced current along with temperature |
| CN114199782A (en) * | 2021-12-17 | 2022-03-18 | 福州大学 | Sb2Te3Circularly polarized light current regulation and control method for topological surface state |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104661504A (en) * | 2015-02-11 | 2015-05-27 | 西北工业大学 | Electromagnetic wave absorption method adopting coherent modulation by utilizing conductive patch |
| US9564588B2 (en) * | 2013-11-19 | 2017-02-07 | Samsung Electronics Co., Ltd. | Device for detecting surface plasmon and polarization by using topological insulator, method of manufacturing the device, and method of detecting surface plasmon and polarization |
| US20180138231A1 (en) * | 2016-11-15 | 2018-05-17 | Samsung Electronics Co., Ltd. | Optical sensor |
| CN108493274A (en) * | 2018-03-29 | 2018-09-04 | 中国科学院金属研究所 | A kind of controllable vertically bismuth selenide nanometer sheet film and preparation method thereof |
-
2019
- 2019-06-05 CN CN201910486444.3A patent/CN110164999B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9564588B2 (en) * | 2013-11-19 | 2017-02-07 | Samsung Electronics Co., Ltd. | Device for detecting surface plasmon and polarization by using topological insulator, method of manufacturing the device, and method of detecting surface plasmon and polarization |
| CN104661504A (en) * | 2015-02-11 | 2015-05-27 | 西北工业大学 | Electromagnetic wave absorption method adopting coherent modulation by utilizing conductive patch |
| US20180138231A1 (en) * | 2016-11-15 | 2018-05-17 | Samsung Electronics Co., Ltd. | Optical sensor |
| CN108493274A (en) * | 2018-03-29 | 2018-09-04 | 中国科学院金属研究所 | A kind of controllable vertically bismuth selenide nanometer sheet film and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| A. D. LAFORGE 等: ""Optical characterization of Bi2Se3 in a magnetic field: Infrared evidence for magnetoelectric coupling in a topological insulator material"", 《PHYSICAL REVIEW B》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111289832A (en) * | 2020-03-27 | 2020-06-16 | 福州大学 | Measuring and changing three-dimensional topological insulator Bi2Te3Method for changing trend of circularly polarized light induced current along with temperature |
| CN111289832B (en) * | 2020-03-27 | 2021-06-25 | 福州大学 | Method for measuring and changing trend of circularly polarized light induced current of three-dimensional topological insulator Bi2Te3 along with temperature |
| CN114199782A (en) * | 2021-12-17 | 2022-03-18 | 福州大学 | Sb2Te3Circularly polarized light current regulation and control method for topological surface state |
| CN114199782B (en) * | 2021-12-17 | 2023-08-18 | 福州大学 | Sb (Sb) 2 Te 3 Topological surface state circularly polarized light current regulation and control method |
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