CN105304690A - Method for regulating and controlling spin orbit coupling of semiconductor quantum well of sphalerite structure - Google Patents
Method for regulating and controlling spin orbit coupling of semiconductor quantum well of sphalerite structure Download PDFInfo
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- CN105304690A CN105304690A CN201510682641.4A CN201510682641A CN105304690A CN 105304690 A CN105304690 A CN 105304690A CN 201510682641 A CN201510682641 A CN 201510682641A CN 105304690 A CN105304690 A CN 105304690A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 106
- 238000000034 method Methods 0.000 title claims abstract description 28
- 230000001105 regulatory effect Effects 0.000 title abstract description 7
- 230000008878 coupling Effects 0.000 title abstract 3
- 238000010168 coupling process Methods 0.000 title abstract 3
- 238000005859 coupling reaction Methods 0.000 title abstract 3
- 229910052950 sphalerite Inorganic materials 0.000 title abstract 3
- 230000001276 controlling effect Effects 0.000 title abstract 2
- 229910000673 Indium arsenide Inorganic materials 0.000 claims abstract description 39
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 230000004888 barrier function Effects 0.000 claims description 28
- 238000001228 spectrum Methods 0.000 claims description 25
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 24
- 230000008859 change Effects 0.000 claims description 17
- 230000010287 polarization Effects 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 7
- 238000003780 insertion Methods 0.000 claims description 6
- 230000037431 insertion Effects 0.000 claims description 6
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 230000033228 biological regulation Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 17
- 239000010936 titanium Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000011435 rock Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66984—Devices using spin polarized carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
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- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Recrystallisation Techniques (AREA)
Abstract
The invention relates to a method for regulating and controlling the spin orbit coupling of a semiconductor quantum well of a sphalerite structure. The spin orbit coupling proportion of Rashba to Dresselhaus of the semiconductor quantum well is regulated and controlled by changing the width of the semiconductor quantum well of the sphalerite structure and inserting an ultrathin InAs layer to one interface of the quantum well. The method is easy, and the regulation and control effect is obvious.
Description
Technical field
The present invention relates to Semiconductor Spintronics field, be specifically related to a kind of regulate and control the method for zincblende lattce structure semiconductor quantum well Quantum geometrical phase.
Background technology
Electronics has two attribute, and one is spin attribute, and another kind is electric charge attribute.Because operation electron spin is more much smaller than the energy required for operating charge, therefore cause the extensive concern of people as the spintronics of information carrier using spin.One of them of spintronics branches into Semiconductor Spintronics, and it is that the spin states of Equivalent Magnetic Field to electronics produced by Quantum geometrical phase is regulated and controled.Traditional semiconductor technology can be followed compatible preferably due to it and not need to apply externally-applied magnetic field, therefore there is good application prospect.In the research of Semiconductor Spintronics, Quantum geometrical phase becomes current study hotspot.Quantum geometrical phase has two kinds of different sources, one is by body inverting asymmetry (bulkinversionasymmetry, and the asymmetric (interfaceinversionasymmetry of Interface Inversion BIA), IIA) the Dresselhaus Quantum geometrical phase caused, another kind is the Rashba Quantum geometrical phase caused by structure inversion asymmetric (structureinversionasymmetry, SIA).Can interact between these two kinds of Quantum geometrical phase, thus cause varying in size of in different crystallographic directions spin-orbit splitting.For the zincblende lattce structure quantum well sample that (001) leads, when Rashba and Dresselhaus Quantum geometrical phase has identical intensity, main spin relaxation mechanism (i.e. Daykonov-Perel mechanism) will be suppressed, the spin life-span of electronics will extend greatly, and this realizes novel spin electric device by contributing to.Therefore, the active control of Rashba and Dresselhaus Quantum geometrical phase and ratio thereof is had great importance for Semiconductor Spintronics.
At present, according to the report of other documents, by the position of modulation doping in the barrier layer of change quantum well, or step quantum well structure can be passed through, or change the ratio that ambient temperature regulates and controls Rashba and Dresselhaus Quantum geometrical phase.But these two kinds of method structures are comparatively complicated, a kind of last method needs to introduce temperature varying system, and operation easier is larger.
Summary of the invention
In view of this, the object of the invention is to propose a kind of regulate and control the method for zincblende lattce structure semiconductor quantum well Quantum geometrical phase, can simple and efficient and effective regulation and control semiconductor quantum well Rashba and Dresselhaus Quantum geometrical phase ratio.
The present invention adopts following scheme to realize: a kind of regulate and control the method for zincblende lattce structure semiconductor quantum well Quantum geometrical phase, specifically comprise the following steps:
Step S1: select qualified Spectrum of Semiconductor Quantum Wells;
Step S2: grow the wide semiconductor quantum well of different trap with molecular beam epitaxial device;
Step S3: Rashba and the Dresselhaus Quantum geometrical phase ratio of semiconductor quantum well in measuring process S2.
Further, the condition described in described step S1 is: described Spectrum of Semiconductor Quantum Wells is zincblende lattce structure, described Spectrum of Semiconductor Quantum Wells is monocrystalline and the trap of described Spectrum of Semiconductor Quantum Wells is wide for a few nanometer is to tens nanometers.
Further, grow the wide semiconductor quantum well of different trap in described step S2, the wide excursion of this trap is that a few nanometer is to tens nanometers.
Further, described step S3 specifically comprises the following steps:
Step S31: irradiate semiconductor quantum well with circularly polarized light, incidence angle is between 30 degree to 45 degree, records the photoelectric current I caused by Rashba Quantum geometrical phase in described semiconductor quantum well respectively
sIAwith the photoelectric current I caused by Dresselhaus Quantum geometrical phase
bIA;
Wherein, I
sIA∝ α τ
pp
cm, I
bIA∝ β τ
pp
cm; α is Rashba Quantum geometrical phase parameter, and its intensity proportional is in the intensity of Rashba Quantum geometrical phase, and β is Dresselhaus Quantum geometrical phase parameter, its intensity proportional in the intensity of Dresselhaus Quantum geometrical phase, τ
pfor the momentum relaration time, P
cfor the circular polarization of incident exciting light, M is the intensity of incident exciting light;
Step S32: the ratio calculating Rashba and the Dresselhaus Quantum geometrical phase under a certain incidence angle
Step S33: change the sample that different trap is wide, repeats step S31 and S32.
The present invention can also realize by the following method: a kind of regulate and control the method for zincblende lattce structure semiconductor quantum well Quantum geometrical phase, specifically comprise the following steps:
Step S1: select qualified Spectrum of Semiconductor Quantum Wells;
Step S2: insert ultra-thin InAs layer with molecular beam epitaxial device on one of them interface of semiconductor quantum well, namely inserts ultra-thin InAs layer between the well layer and barrier layer of semiconductor quantum well; Wherein the thickness of the described InAs layer of ultra-thin expression is between 0.5 to 3 monoatomic layer;
Step S3: Rashba and the Dresselhaus Quantum geometrical phase ratio measuring semiconductor quantum well.
Further, the condition described in described step S1 is: described Spectrum of Semiconductor Quantum Wells is zincblende lattce structure, described Spectrum of Semiconductor Quantum Wells is monocrystalline and the trap of described Spectrum of Semiconductor Quantum Wells is wide for a few nanometer is to tens nanometers.
Further, the band gap of the InAs layer material inserted in described step S2 is different from the band gap of the material of well layer and barrier layer, the thickness of the InAs layer inserted is between 0.5 to 3 monoatomic layer, the InAs layer of described insertion is grown with molecular beam epitaxy system, its growth temperature is between 480-520 degree Celsius, its growth rate is between 0.08-0.12ML/s, and the InAs layer of described insertion is at As
2atmosphere in grow, vacuum degree control is in 3.8-4.5 × 10
-6holder.
Further, described step S3 specifically comprises the following steps:
Step S31: irradiate semiconductor quantum well with circularly polarized light, incidence angle is between 30 degree to 45 degree, records the photoelectric current I caused by Rashba Quantum geometrical phase in described semiconductor quantum well respectively
sIAwith the photoelectric current I caused by Dresselhaus Quantum geometrical phase
bIA;
Wherein, I
sIA∝ α τ
pp
cm, I
bIA∝ β τ
pp
cm; α is Rashba Quantum geometrical phase parameter, and its intensity proportional is in the intensity of Rashba Quantum geometrical phase, and β is Dresselhaus Quantum geometrical phase parameter, its intensity proportional in the intensity of Dresselhaus Quantum geometrical phase, τ
pfor the momentum relaration time, P
cfor the circular polarization of incident exciting light, M is the intensity of incident exciting light;
Step S32: the ratio calculating Rashba and the Dresselhaus Quantum geometrical phase under a certain incidence angle
Step S33: change the sample that there is InAs insert layer at the wide and interface of different trap, repeat step S31 and S32.
Compared with prior art, the present invention has following beneficial effect.
1, the method for this regulation and control semiconductor quantum well Rashba provided by the invention and Dresselhaus Quantum geometrical phase ratio, structural design is simple, is easy to operation, is conducive to applying in the future.
2, the method for this regulation and control Rashba and Dresselhaus Quantum geometrical phase ratio provided by the invention, regulating effect is obvious.
Accompanying drawing explanation
Fig. 1 is the structural representation of a semiconductor quantum well sample (being designated as sample A) in embodiments of the invention.
Fig. 2 is the structural representation of second semiconductor quantum well sample (being designated as sample B) in embodiments of the invention.
Fig. 3 is the structural representation of the 3rd semiconductor quantum well sample (being designated as sample C) in embodiments of the invention.
Fig. 4 is the structural representation of the 4th semiconductor quantum well sample (being designated as sample D) in embodiments of the invention.
Fig. 5 is the test macro schematic diagram measuring semiconductor quantum well Rashba and Dresselhaus Quantum geometrical phase ratio in embodiments of the invention.
Fig. 6 (a) and Fig. 6 (b) are for measuring sample and the light path distribution schematic diagram of semiconductor quantum well Rashba and Dresselhaus Quantum geometrical phase ratio in embodiments of the invention, wherein Fig. 6 (a) is sample and the light path distribution schematic diagram of measuring semiconductor quantum well Rashba Quantum geometrical phase, and Fig. 6 (b) is sample and the light path distribution schematic diagram of measuring semiconductor quantum well Dresselhaus Quantum geometrical phase.
Fig. 7 is four semiconductor quantum well samples (i.e. sample A, B, C, D) in embodiments of the invention corresponding to quantum well first heavy hole subband to Rashba and the Dresselhaus Quantum geometrical phase ratio of the first electron energy transition with the wide change curve of trap.
[primary clustering symbol description]
In Fig. 1: 101 is (001) face half-insulating GaAs substrate, 102 is the GaAs resilient coating of 200 nanometers (nm), and 103 is the Al of 100nm
0.3ga
0.7as barrier layer, 104 is 3nmGaAs potential well layer, and 105 is the Al of 10nm
0.33ga
0.67as barrier layer, potential well layer 104 and barrier layer 105 repeat 20 cycles, and 106 is the Al of 100nm
0.3ga
0.7as barrier layer, 107 is 20nmGaAs cap rock.
In Fig. 2: 201 is (001) face half-insulating GaAs substrate, 202 is the GaAs resilient coating of 200 nanometers (nm), and 203 is the Al of 100nm
0.3ga
0.7as barrier layer, 204 is 7nmGaAs potential well layer, and 205 is the Al of 10nm
0.33ga
0.67as barrier layer, potential well layer 204 and barrier layer 105 repeat 20 cycles, and 206 is the Al of 100nm
0.3ga
0.7as barrier layer, 207 is 20nmGaAs cap rock.
In Fig. 3: 301 is (001) face half-insulating GaAs substrate, 302 is the GaAs resilient coating of 200 nanometers (nm), and 303 is the Al of 100nm
0.3ga
0.7as barrier layer, 304 is 3nmGaAs potential well layer, and 305 is the Al of 10nm
0.33ga
0.67as barrier layer, potential well layer 304 and barrier layer 105 repeat 20 cycles, and 306 is the Al of 100nm
0.3ga
0.7as barrier layer, 307 is 20nmGaAs cap rock, and 308 is the InAs layer of monoatomic thickness.
In Fig. 4: 401 is (001) face half-insulating GaAs substrate, 402 is the GaAs resilient coating of 200 nanometers (nm), and 403 is the Al of 100nm
0.3ga
0.7as barrier layer, 404 is 7nmGaAs potential well layer, and 405 is the Al of 10nm
0.33ga
0.67as barrier layer, potential well layer 404 and barrier layer 105 repeat 20 cycles, and 406 is the Al of 100nm
0.3ga
0.7as barrier layer, 407 is 20nmGaAs cap rock, and 408 is the InAs layer of monoatomic thickness.
In Fig. 5: 501 is tunable titanium sapphire Ti:Sapphire laser, and 502 is chopper, and 503 is the polarizer, and 504 is photoelasticity modulator, and 505 is semiconductor quantum well sample, and 506 is galvo-preamplifier, and 507 and 508 are two lock-in amplifiers.509 is a computer, in order to control titanium sapphire Ti:Sapphire laser 501 and photoelasticity adjuster 504 transforms to required wavelength.
In Fig. 6: 601 is incident exciting light, 602 is semiconductor quantum well sample to be measured, and 603 is the indium electrode on sample, and 604 for beat hot spot on sample, and 605 is the normal direction of sample, 606 is the photoelectric current I induced by Rashba Quantum geometrical phase
sIA, 607 is the photoelectric current I induced by Dresselhaus Quantum geometrical phase
bIA.
In Fig. 7: rectangle symbols 701 represents tests Rashba and the Dresselhaus Quantum geometrical phase ratio of the corresponding first heavy hole subband of the semiconductor quantum well without InAs insert layer that records to the first electron energy transition (being designated as 1H1E) with the wide change of trap, what circle symbol 702 represented that experiment records have Rashba and the Dresselhaus Quantum geometrical phase ratio of the semiconductor quantum well of InAs insert layer correspondence 1H1E is with the wide change of trap.
Embodiment
Below in conjunction with drawings and Examples, the present invention will be further described.
Present embodiments provide a kind of regulate and control the method for zincblende lattce structure semiconductor quantum well Quantum geometrical phase, specifically comprise the following steps:
Step S1: select qualified Spectrum of Semiconductor Quantum Wells;
Step S2: grow the wide semiconductor quantum well of different trap with molecular beam epitaxial device;
Step S3: Rashba and the Dresselhaus Quantum geometrical phase ratio of semiconductor quantum well in measuring process S2.
In the present embodiment, the condition described in described step S1 is: described Spectrum of Semiconductor Quantum Wells is zincblende lattce structure, described Spectrum of Semiconductor Quantum Wells is monocrystalline and the trap of described Spectrum of Semiconductor Quantum Wells is wide for a few nanometer is to tens nanometers.
In the present embodiment, grow the wide semiconductor quantum well of different trap in described step S2, the wide excursion of this trap is that a few nanometer is to tens nanometers.
In the present embodiment, described step S3 specifically comprises the following steps:
Step S31: irradiate semiconductor quantum well with circularly polarized light, incidence angle is between 30 degree to 45 degree, records the photoelectric current I caused by Rashba Quantum geometrical phase in described semiconductor quantum well respectively
sIAwith the photoelectric current I caused by Dresselhaus Quantum geometrical phase
bIA;
Wherein, I
sIA∝ α τ
pp
cm, I
bIA∝ β τ
pp
cm; α is Rashba Quantum geometrical phase parameter, and its intensity proportional is in the intensity of Rashba Quantum geometrical phase, and β is Dresselhaus Quantum geometrical phase parameter, its intensity proportional in the intensity of Dresselhaus Quantum geometrical phase, τ
pfor the momentum relaration time, P
cfor the circular polarization of incident exciting light, M is the intensity of incident exciting light;
Step S32: the ratio calculating Rashba and the Dresselhaus Quantum geometrical phase under a certain incidence angle
Step S33: change the sample that different trap is wide, repeats step S31 and S32.
The present embodiment additionally provide a kind of regulate and control the method for zincblende lattce structure semiconductor quantum well Quantum geometrical phase, specifically comprise the following steps:
Step S1: select qualified Spectrum of Semiconductor Quantum Wells;
Step S2: insert ultra-thin InAs layer with molecular beam epitaxial device on one of them interface of semiconductor quantum well, namely inserts ultra-thin InAs layer between the well layer and barrier layer of semiconductor quantum well; Wherein the thickness of the described InAs layer of ultra-thin expression is between 0.5 to 3 monoatomic layer;
Step S3: Rashba and the Dresselhaus Quantum geometrical phase ratio measuring semiconductor quantum well.
In the present embodiment, the condition described in described step S1 is: described Spectrum of Semiconductor Quantum Wells is zincblende lattce structure, described Spectrum of Semiconductor Quantum Wells is monocrystalline and the trap of described Spectrum of Semiconductor Quantum Wells is wide for a few nanometer is to tens nanometers.
In the present embodiment, the band gap of the InAs layer material inserted in described step S2 is different from the band gap of the material of well layer and barrier layer, the thickness of the InAs layer inserted is between 0.5 to 3 monoatomic layer, the InAs layer of described insertion is grown with molecular beam epitaxy system, its growth temperature is between 480-520 degree Celsius, its growth rate is between 0.08-0.12ML/s, and the InAs layer of described insertion is at As
2atmosphere in grow, vacuum degree control is in 3.8-4.5 × 10
-6holder.
In the present embodiment, described step S3 specifically comprises the following steps:
Step S31: irradiate semiconductor quantum well with circularly polarized light, incidence angle is between 30 degree to 45 degree, records the photoelectric current I caused by Rashba Quantum geometrical phase in described semiconductor quantum well respectively
sIAwith the photoelectric current I caused by Dresselhaus Quantum geometrical phase
bIA;
Wherein, I
sIA∝ α τ
pp
cm, I
bIA∝ β τ
pp
cm; α is Rashba Quantum geometrical phase parameter, and its intensity proportional is in the intensity of Rashba Quantum geometrical phase, and β is Dresselhaus Quantum geometrical phase parameter, its intensity proportional in the intensity of Dresselhaus Quantum geometrical phase, τ
pfor the momentum relaration time, P
cfor the circular polarization of incident exciting light, M is the intensity of incident exciting light;
Step S32: the ratio calculating Rashba and the Dresselhaus Quantum geometrical phase under a certain incidence angle
Step S33: change the sample that there is InAs insert layer at the wide and interface of different trap, repeat step S31 and S32.
Concrete, respectively as shown in Figure 1,2,3, 4, it is grown by molecular beam epitaxial device the structure of four semiconductor quantum wells that the present embodiment is selected.For the sample A shown in Fig. 1, on semi-insulating (001) face GaAs substrate 101, first grow the GaAs resilient coating 102 of 200nm, then grow the Al of 100nm
0.3ga
0.7as barrier layer 103, regrowth 3nmGaAs potential well layer 104, then grows the Al of 10nm
0.33ga
0.67as barrier layer 105, potential well layer 4 and barrier layer 5 repeat 20 cycles, then grow the Al of 100nm successively
0.3ga
0.7as barrier layer 106 and 20nmGaAs cap rock 107.Al
0.3ga
0.7as, Al
0.33ga
0.67the growth temperature of As, GaAs layer is 600 DEG C.Materials all in sample does not all adulterate.Sample B shown in Fig. 2, the thickness except GaAs layer 204 becomes except 7nm, and other structures and growth regulating are all identical in sample A.Sample C shown in Fig. 3, except at 304GaAs potential well layer and 305Al
0.33ga
0.67increase outside the InAs layer 308 of one deck monoatomic thickness between As barrier layer, other structures are all identical with the structure of sample A in Fig. 1.Wherein, Al
0.3ga
0.7as, Al
0.33ga
0.67the growth temperature that the growth temperature of As, GaAs layer is 600 ° of C, InAs layers is 500 DEG C.Sample D shown in Fig. 4, the thickness except GaAs layer 404 becomes except 7nm, and other structures and growth conditions are all identical with sample C.
Preferably, the present embodiment additionally provides a system measured and regulate and control semiconductor quantum well Rashba and Dresselhaus Quantum geometrical phase ratio, as shown in Figure 5.Wherein, tunable titanium sapphire Ti:Sapphire laser 501 frequency is 80MHz, spectrum halfwidth is 7nm, the chopping frequency of chopper 502 is 230Hz, the main shaft of the polarizer 503 from the horizontal by 45 degree, the major axes orientation direction along the horizontal plane of photoelasticity modulator 504, modulating frequency is 50KHz, sample 505 is semiconductor quantum well sample to be measured, sample along [110] and
direction is cleaved into 4 × 4mm
2, deposited a pair indium electrode along [100] direction, electrode spacing is 3mm, after indium electrode deposition completes, anneals 10 minutes in 420 degrees Celsius of lower nitrogen atmospheres.From titanium sapphire laser device 501 light out, through chopper 502, then become linearly polarized light through the polarizer 503, its polarization direction, from the horizontal by 45 degree, then through photoelasticity modulator 504, is radiated on sample 505.The power of light at 840nm place beaten on sample is 47mW.In experimentation, control titanium sapphire laser device 501 by computer 509 and photoelasticity modulator 504 transforms to required wavelength.One multiple-frequency modulation frequency of photoelasticity modulator 504 is 50KHz, bit phase delay is quarter-wave, like this after photoelasticity modulator, polarisation of light state periodically will be vibrated between Left-hand circular polarization and right-hand circular polarization, and frequency of oscillation is 50KHz.The hot spot be radiated on sample is Gauss's hot spot, and spot diameter is about 2mm.Sample will produce a large amount of photo-generated carriers under light illumination, and these photo-generated carriers, after galvo-preamplifier 506 amplifies, access two lock-in amplifiers 507 and 508 respectively.The reference signal of lock-in amplifier 507 is a frequency multiplication reference signal of photoelasticity modulator 504, therefore it measures the frequency-doubled signal modulated by photoelasticity modulator, is namely excited the photo-signal of generation by circularly polarized light.The reference signal of lock-in amplifier 508 is from chopper 502, therefore it measures the signal modulated by chopper, namely common photo-signal.
The present embodiment additionally provides the sample and light path distribution schematic diagram of measuring semiconductor quantum well Rashba and Dresselhaus Quantum geometrical phase ratio, wherein, Fig. 6 (a) is for measuring sample and the light path distribution schematic diagram of semiconductor quantum well Rashba Quantum geometrical phase, and Fig. 6 (b) is sample and the light path distribution schematic diagram of measuring semiconductor quantum well Dresselhaus Quantum geometrical phase.In Fig. 6 (a), the plane of incidence is parallel to [010] crystal orientation of sample, the angle in incident ray and sample normal direction is 30 degree, what such edge [100] direction recorded excites the photoelectric current of generation (frequency-doubled signal namely modulated by photoelasticity modulator, records by phase-locked 507) (to be designated as I by circularly polarized light
sIA) be caused by semiconductor quantum well Rashba Quantum geometrical phase, its intensity proportional is in Rashba Quantum geometrical phase.I
sIAcan be expressed as:
I
SIA∝ατ
pP
cM(1)。
Wherein, α is Rashba Quantum geometrical phase parameter, its intensity proportional in the intensity of Rashba Quantum geometrical phase, τ
pfor the momentum relaration time, P
cfor the circular polarization of incident exciting light, in the present embodiment, be circularly polarized light due to what adopt, therefore circular polarization P
c=1, M is the intensity of incident exciting light.In Fig. 6 (b), the plane of incidence is parallel to [100] crystal orientation of sample, the angle in incident ray and sample normal direction is 30 degree, and what record along [010] direction like this excites the photoelectric current of generation (frequency-doubled signal namely modulated by photoelasticity modulator records by phase-locked 507) (to be designated as I by circularly polarized light
bIA) be caused by semiconductor quantum well Dresselhaus Quantum geometrical phase, its intensity proportional is in Dresselhaus Quantum geometrical phase.I
bIAcan be expressed as:
I
BIA∝βτ
pP
cM(2)。
Wherein, β is Dresselhaus Quantum geometrical phase parameter, and its intensity proportional is in the intensity of Dresselhaus Quantum geometrical phase.Like this, as can be seen from formula (1) and (2), from the photoelectric current I recorded
sIAand I
bIAwe can obtain the ratio of Rashba and the Dresselhaus Quantum geometrical phase parameter of surveyed semiconductor quantum well sample, that is:
Because Rashba and Dresselhaus Quantum geometrical phase parameter is proportional to Rashba and Dresselhaus Quantum geometrical phase intensity respectively, therefore, I
sIA/ I
bIAbe the ratio of Rashba and Dresselhaus Quantum geometrical phase.When measurement, first need conputer controlled tunable titanium sapphire laser device wavelength to be transferred to the larger energy position of a certain transition probability of this semiconductor quantum well, as the wavelength location of corresponding quantum well 1H1E transition, then record the I of sample respectively
sIAand I
bIAelectric current, then by I
sIA/ I
bIAratio obtain the ratio of Rashba and Dresselhaus Quantum geometrical phase.Then, change sample, survey the ratio that the wide or interface of different trap has Rashba and the Dresselhaus Quantum geometrical phase of the zinc blende semiconductor sample of ultra-thin InAs insert layer.
As shown in Figure 7, the present embodiment ratio of additionally providing Rashba and the Dresselhaus Quantum geometrical phase of four semiconductor quantum well samples (i.e. sample A, B, C, D) corresponding 1H1E transition is with the wide change curve of trap.Visible, when there is no InAs insert layer, the ratio of Rashba and the Dresselhaus Quantum geometrical phase of the wide GaAs/AlGaAs quantum well for 3nm of trap is 0.5, when trap is wide be increased to 7nm time, the ratio of Rashba and the Dresselhaus Quantum geometrical phase of quantum well is increased to 0.79, and this mainly increases Dresselhaus Quantum geometrical phase intensity because trap reductions is little.When InAs layer is inserted at one of them interface in the wide GaAs/AlGaAs quantum well for 3nm of trap, the ratio of Rashba and the Dresselhaus Quantum geometrical phase of quantum well is increased to 1.15.Visible, the contribution of InAs insert layer to Rashba Quantum geometrical phase is greater than the contribution to Dresselhaus Quantum geometrical phase.When interface has that the trap of the GaAs/AlGaAs quantum well of InAs insert layer is wide is increased to 7nm, the nearly step of ratio of Rashba and the Dresselhaus Quantum geometrical phase of quantum well is increased to 2.7.Visible, inserting ultra-thin InAs layer by the wide and interface of trap can the ratio of Effective Regulation Rashba and Dresselhaus Quantum geometrical phase.
In sum, the present invention by change trap wide and insert on one of them interface of quantum well ultra-thin InAs layer realize to Rashba and Dresselhaus Quantum geometrical phase ratio regulation and control object.Change the wide effect mainly playing change Dresselhaus Quantum geometrical phase intensity of trap, and the object that InAs layer mainly plays increase Rashba Quantum geometrical phase is inserted at one of them interface of quantum well, therefore, the Quantum geometrical phase of zincblende lattce structure semiconductor quantum effectively can be adjusted by these two kinds of methods.Method provided by the invention realizes convenient, and structural design is simple, and cost is low, and regulating effect is good.
The foregoing is only preferred embodiment of the present invention, all equalizations done according to the present patent application the scope of the claims change and modify, and all should belong to covering scope of the present invention.
Claims (8)
1. regulate and control a method for zincblende lattce structure semiconductor quantum well Quantum geometrical phase, it is characterized in that comprising the following steps:
Step S1: select qualified Spectrum of Semiconductor Quantum Wells;
Step S2: grow the wide semiconductor quantum well of different trap with molecular beam epitaxial device;
Step S3: Rashba and the Dresselhaus Quantum geometrical phase ratio of semiconductor quantum well in measuring process S2.
2. according to claim 1 a kind of regulate and control the method for zinc blende semiconductor quantum well Quantum geometrical phase, it is characterized in that: the condition described in described step S1 is: described Spectrum of Semiconductor Quantum Wells is zincblende lattce structure, described Spectrum of Semiconductor Quantum Wells is monocrystalline and the trap of described Spectrum of Semiconductor Quantum Wells is wide for a few nanometer is to tens nanometers.
3. according to claim 1 a kind of regulate and control the method for zinc blende semiconductor quantum well Quantum geometrical phase, it is characterized in that: grow the wide semiconductor quantum well of different trap in described step S2, the wide excursion of this trap is that a few nanometer is to tens nanometers.
4. according to claim 1 a kind of regulate and control the method for zinc blende semiconductor quantum well Quantum geometrical phase, it is characterized in that: described step S3 specifically comprises the following steps:
Step S31: irradiate semiconductor quantum well with circularly polarized light, incidence angle is between 30 degree to 45 degree, records the photoelectric current I caused by Rashba Quantum geometrical phase in described semiconductor quantum well respectively
sIAwith the photoelectric current I caused by Dresselhaus Quantum geometrical phase
bIA;
Wherein, I
sIA∝ α τ
pp
cm, I
bIA∝ β τ
pp
cm; α is Rashba Quantum geometrical phase parameter, and its intensity proportional is in the intensity of Rashba Quantum geometrical phase, and β is Dresselhaus Quantum geometrical phase parameter, its intensity proportional in the intensity of Dresselhaus Quantum geometrical phase, τ
pfor the momentum relaration time, P
cfor the circular polarization of incident exciting light, M is the intensity of incident exciting light;
Step S32: the ratio calculating Rashba and the Dresselhaus Quantum geometrical phase under a certain incidence angle
Step S33: change the sample that different trap is wide, repeats step S31 and S32.
5. regulate and control a method for zincblende lattce structure semiconductor quantum well Quantum geometrical phase, it is characterized in that comprising the following steps:
Step S1: select qualified Spectrum of Semiconductor Quantum Wells;
Step S2: insert ultra-thin InAs layer with molecular beam epitaxial device on one of them interface of semiconductor quantum well, namely inserts ultra-thin InAs layer between the well layer and barrier layer of semiconductor quantum well;
Wherein the thickness of the described InAs layer of ultra-thin expression is between 0.5 to 3 monoatomic layer;
Step S3: Rashba and the Dresselhaus Quantum geometrical phase ratio measuring semiconductor quantum well.
6. according to claim 5 a kind of regulate and control the method for zinc blende semiconductor quantum well Quantum geometrical phase, it is characterized in that: the condition described in described step S1 is: described Spectrum of Semiconductor Quantum Wells is zincblende lattce structure, described Spectrum of Semiconductor Quantum Wells is monocrystalline and the trap of described Spectrum of Semiconductor Quantum Wells is wide for a few nanometer is to tens nanometers.
7. according to claim 5 a kind of regulate and control the method for zinc blende semiconductor quantum well Quantum geometrical phase, it is characterized in that: the band gap of the InAs layer material inserted in described step S2 is different from the band gap of the material of well layer and barrier layer, the thickness of the InAs layer inserted is between 0.5 to 3 monoatomic layer, the InAs layer of described insertion is grown with molecular beam epitaxy system, its growth temperature is between 480-520 degree Celsius, its growth rate is between 0.08-0.12ML/s, and the InAs layer of described insertion is at As
2atmosphere in grow, vacuum degree control is in 3.8-4.5 × 10
-6holder.
8. according to claim 5 a kind of regulate and control the method for zinc blende semiconductor quantum well Quantum geometrical phase, it is characterized in that: described step S3 specifically comprises the following steps:
Step S31: irradiate semiconductor quantum well with circularly polarized light, incidence angle is between 30 degree to 45 degree, records the photoelectric current I caused by Rashba Quantum geometrical phase in described semiconductor quantum well respectively
sIAwith the photoelectric current I caused by Dresselhaus Quantum geometrical phase
bIA;
Wherein, I
sIA∝ α τ
pp
cm, I
bIA∝ β τ
pp
cm; α is Rashba Quantum geometrical phase parameter, and its intensity proportional is in the intensity of Rashba Quantum geometrical phase, and β is Dresselhaus Quantum geometrical phase parameter, its intensity proportional in the intensity of Dresselhaus Quantum geometrical phase, τ
pfor the momentum relaration time, P
cfor the circular polarization of incident exciting light, M is the intensity of incident exciting light;
Step S32: the ratio calculating Rashba and the Dresselhaus Quantum geometrical phase under a certain incidence angle
Step S33: change the sample that there is InAs insert layer at the wide and interface of different trap, repeat step S31 and S32.
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Cited By (4)
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| CN106654003A (en) * | 2017-01-11 | 2017-05-10 | 福州大学 | Method for changing variation of Rashba spin-orbit coupling in GaAs/AlGaAs with temperature |
| CN106783966A (en) * | 2017-01-11 | 2017-05-31 | 福州大学 | The method of Dresselhaus Quantum geometrical phases in regulation and control GaAs/AlGaAs two-dimensional electron gas |
| CN111208402A (en) * | 2020-01-17 | 2020-05-29 | 吉林大学 | Method for independently regulating and controlling spin-orbit coupling parameters of semiconductor quantum well |
| WO2023141993A1 (en) * | 2022-01-28 | 2023-08-03 | 中国科学院半导体研究所 | Enhancement method for hole linear rashba spin-orbit coupling effect |
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| US8575653B2 (en) * | 2010-09-24 | 2013-11-05 | Intel Corporation | Non-planar quantum well device having interfacial layer and method of forming same |
| CN104779304A (en) * | 2015-04-02 | 2015-07-15 | 福州大学 | Method for regulating ratio of Rashba and Dresselhaus spin-orbit coupling for semiconductor quantum well material |
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| US20050224785A1 (en) * | 2001-09-27 | 2005-10-13 | National Institute Of Advanced Industrial Science And Technology | Quantum logic gate and quantum logic operation method using exciton |
| US8575653B2 (en) * | 2010-09-24 | 2013-11-05 | Intel Corporation | Non-planar quantum well device having interfacial layer and method of forming same |
| CN104779304A (en) * | 2015-04-02 | 2015-07-15 | 福州大学 | Method for regulating ratio of Rashba and Dresselhaus spin-orbit coupling for semiconductor quantum well material |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106654003A (en) * | 2017-01-11 | 2017-05-10 | 福州大学 | Method for changing variation of Rashba spin-orbit coupling in GaAs/AlGaAs with temperature |
| CN106783966A (en) * | 2017-01-11 | 2017-05-31 | 福州大学 | The method of Dresselhaus Quantum geometrical phases in regulation and control GaAs/AlGaAs two-dimensional electron gas |
| CN106654003B (en) * | 2017-01-11 | 2019-04-02 | 福州大学 | Change the method that Rashba Quantum geometrical phase varies with temperature in GaAs/AlGaAs |
| CN106783966B (en) * | 2017-01-11 | 2019-07-09 | 福州大学 | Regulate and control the method for Dresselhaus Quantum geometrical phase in GaAs/AlGaAs two-dimensional electron gas |
| CN111208402A (en) * | 2020-01-17 | 2020-05-29 | 吉林大学 | Method for independently regulating and controlling spin-orbit coupling parameters of semiconductor quantum well |
| CN111208402B (en) * | 2020-01-17 | 2021-05-04 | 吉林大学 | Method for independently regulating and controlling spin-orbit coupling parameters of semiconductor quantum well |
| WO2023141993A1 (en) * | 2022-01-28 | 2023-08-03 | 中国科学院半导体研究所 | Enhancement method for hole linear rashba spin-orbit coupling effect |
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