CN106611707B - A method of linearly polarized light sends a telegraph stream and varies with temperature trend in change GaAs/AlGaAs two-dimensional electron gas - Google Patents
A method of linearly polarized light sends a telegraph stream and varies with temperature trend in change GaAs/AlGaAs two-dimensional electron gas Download PDFInfo
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- 239000013078 crystal Substances 0.000 description 8
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Abstract
The present invention relates to linearly polarized lights in a kind of change GaAs/AlGaAs two-dimensional electron gas to send a telegraph the method that stream varies with temperature trend, and linearly polarized light sends a telegraph stream and varies with temperature trend in change laser wavelength of incidence Effective Regulation GaAs/AlGaAs two-dimensional electron gas excessively.Method regulating effect of the invention is significant, is easy to implement.
Description
Technical field
The present invention relates to semiconductor and Solid State Electronics field, especially a kind of change GaAs/AlGaAs two-dimensional electron gas
Middle linearly polarized light sends a telegraph the method that stream varies with temperature trend.
Background technique
Linear polarization photogenerated current flow and photoexcitation process, phon scattering, static defect scattering, carrier are in center of asymmetry
Scattering and photon flicker the correlations such as effect.Research linear polarization photogenerated current flow is conducive to prepare practical linear polarization correlation phototube
Part, such as polarization detector, linear polarization photovoltaic device and photoswitch etc..Research linearly polarized light electric current varies with temperature trend
Regulation is conducive to improve the temperature stability of linear polarization related device.
Summary of the invention
In view of this, the purpose of the present invention is to propose to linearly polarized lights in a kind of change GaAs/AlGaAs two-dimensional electron gas to cause
The method that electric current varies with temperature trend, it is more convenient to implement, at low cost, and regulating effect is good.
The present invention is realized using following scheme: linearly polarized light sends a telegraph stream in a kind of change GaAs/AlGaAs two-dimensional electron gas
The method for varying with temperature trend, comprising the following steps:
Step S1: GaAs/AlGaAs semiconductor two-dimensional electron gas sample is grown with molecular beam epitaxial device；
Step S2: making laser wavelength of incidence 1064nm, sample be placed in Dewar bottle, makes sample temperature by 77K to room
Warm 300K variation, the linear polarization photogenerated current flow that measurement sample varies with temperature；
Step S3: making laser wavelength of incidence 532nm, sample be placed in Dewar bottle, makes sample temperature by 77K to room temperature
300K variation, the linear polarization photogenerated current flow that measurement sample varies with temperature.
Further, step S1 specifically: grow semiconductor quantum well sample on gaas substrates with molecular beam epitaxy；
The growth course of sample are as follows: 10 period GaAs/Al are grown first on sample0.3Ga0.7As superlattices are as buffer layer, regeneration
The long GaAs buffer layer for being greater than 1 μm, then grows the Al of 30nm thickness0.3Ga0.7As, regrowth 50nm thickness after progress Si- δ doping
Al0.3Ga0.7As finally grows the GaAs of 10nm thickness；The semiconductor quantum well specimen material is the GaAs/AlGaAs of monocrystalline,
And two-dimensional electron gas is formed on the contact surface of the two.
Further, the control that the control of sample temperature is made up of Dewar bottle and temperature control box in the step S2 and step S3
Warm system.
Compared with prior art, the invention has the following beneficial effects: the present invention provides a kind of change GaAs/AlGaAs bis-
Linearly polarized light sends a telegraph the method that stream varies with temperature trend in dimensional electron gas, and it is more convenient to realize, at low cost, regulating effect is good.
Detailed description of the invention
Fig. 1 is GaAs/AlGaAs two-dimensional electron gas sample schematic diagram in the embodiment of the present invention.
Fig. 2 is light path schematic diagram used in the embodiment of the present invention.
Fig. 3 is the plane of incidence schematic diagram of laser in the embodiment of the present invention.
Fig. 4 is test result figure when laser wavelength of incidence is 1064nm in the embodiment of the present invention.
Fig. 5 is test result figure when laser wavelength of incidence is 532nm in the embodiment of the present invention.
In figure: 1 is the GaAs substrate in (001) face, and 2 be 10 period GaAs/Al0.3Ga0.7As superlattices, 3 is greater than 1 μm
GaAs, 4 be 30nm thickness Al0.3Ga0.7As, 5 be the Al of 50nm thickness0.3Ga0.7As, 6 be the GaAs of 10nm thickness, and 7 mix for Si- δ
Miscellaneous, 8 two-dimensional electron gas to generate on the interface GaAs/AlGaAs, 9 be 1064nm long wavelength laser, and 10 be 532nm wavelength laser
Device, 11 and 12 be reflecting mirror, and 13 be gradual change attenuator, and 14 be chopper, and 15 and 18 be aperture, and 16 be the polarizer, and 17 are
Quarter-wave wave plate, 19 be sample, and 20 and 21 be the indium electrode of deposition.
Specific embodiment
The present invention will be further described with reference to the accompanying drawings and embodiments.
It present embodiments provides linearly polarized light in a kind of change GaAs/AlGaAs two-dimensional electron gas and sends a telegraph stream and vary with temperature
The method of trend, sample are the GaAs/AlGaAs hetero-junctions that grows on gaas substrates of molecular beam epitaxy, in GaAs and
Two-dimensional electron gas is formd on the interface of AlGaAs.In the present embodiment, so that the laser of 1064nm wavelength and 532nm wavelength laser
It is incident on sample respectively, wherein the incidence angle of laser is 30 °, controls sample temperature from 77K by liquid nitrogen and temperature-controlling system
To the variation of room temperature 300K, so that the linearly polarized light for regulating and controlling GaAs/AlGaAs two-dimensional electron gas causes curent change trend.
The present embodiment specifically includes the following steps:
Step S1: GaAs/AlGaAs semiconductor two-dimensional electron gas sample is grown with molecular beam epitaxial device；
Step S2: making laser wavelength of incidence 1064nm, sample be placed in Dewar bottle, makes sample temperature by 77K to room
Warm 300K variation, the linear polarization photogenerated current flow that measurement sample varies with temperature；
Step S3: making laser wavelength of incidence 532nm, sample be placed in Dewar bottle, makes sample temperature by 77K to room temperature
300K variation, the linear polarization photogenerated current flow that measurement sample varies with temperature.
In the present embodiment, condition described in the step S1 are as follows: sample is one and is grown using molecular beam epitaxy
's.Sample substrate is the GaAs in (001) face.The growth course of sample is as follows, and 10 period GaAs/ are grown first on sample
Al0.3Ga0.7As superlattices prevent the defect of substrate from spreading in sample as buffer layer, and GaAs of the regrowth greater than 1 μm is buffered
Then layer grows the Al of 30nm thickness0.3Ga0.7As carries out the Al of regrowth 50nm thickness after Si- δ doping0.3Ga0.7As is finally grown
The GaAs of 10nm thickness is as cap rock.Each layer of sample is all monocrystalline, and sample can generate two-dimentional electricity on the interface of GaAs and AlGaAs
Sub- gas.Sample structure is as shown in Figure 1.
The edge of sample is parallel to [110] crystal orientation and [1 of sample in the present embodiment0] crystal orientation, in the diagonal side of sample
It deposited a pair of of indium electrode to i.e. [100] crystal orientation.After the completion of indium electrode deposition, anneal 15 minutes in vacuum at 420 DEG C.Exist again
It burn-ons on indium electrode silver wire, to obtain linearly polarized light current signal.
In the present embodiment, the step S2 can be divided into two specific steps of S21 and S22:
Step S21: photic come the linear polarization for regulating and controlling GaAs/AlGaAs two-dimensional electron gas by the wavelength for changing incident laser
Electric current.Sample is placed in Dewar bottle in embodiment, and injects liquid nitrogen in Dewar bottle, by by Dewar bottle and temperature-controlled cabinet
The temperature-controlling system control sample temperature of composition is from 77K to the variation of room temperature 300K.By controlling the switch of 1064nm laser, make
On the laser light incident to sample for obtaining 1064nm wavelength.Wherein the incidence angle of laser is 30 °, and plane of incidence is as shown in Figure 3.
Step S22: changing the polarization state for being incident on 1064nm laser on sample, and sample is made to generate linearly polarized light electric current.
Specific optical path is as shown in Figure 2.Collimated light path first, adjustment laser pass through two apertures, and laser is after chopper, then passes through
Crossing the polarizer makes the polarization direction of laser consistent with the polarization direction of the polarizer, is then radiated at after quarter-wave plate
On sample.Wherein the edge of sample is parallel to [110] and [1 of crystal0] crystal orientation is that [100] are brilliant in the diagonal direction of sample
To deposited a pair of of indium electrode.After the completion of indium electrode deposition, anneal 15 minutes in vacuum at 420 DEG C.It is welded on indium electrode again
Upper silver wire, silver wire and conducting wire are connected access preamplifier to obtain linearly polarized light current signal.Laser in the present embodiment
Angle with sample plane is 60 °, and the plane of incidence of laser is as shown in Figure 3.In embodiment by step motor control four/
One wave plate is rotated with 5 ° of each step-length, and corotation crosses 360 °.Since wave plate rotates, be incident on laser on sample in linearly polarized light and
Mechanical periodicity between circularly polarized light.The resulting signal synchronous with wave plate rotation of sample passes through preamplifier and lock-in amplifier
Computer is inputted after amplification.The linear polarization photogenerated current flow letter under the irradiation of 1064nm wavelength laser is extracted by formula fitting later
Number.Re-test sample under laser irradiation and add 1V voltage when common photoelectric current I, the common photoelectric current I of linearly polarized light is returned
One changes, i.e., by the linear polarization photogenerated current flow LPGE signal measured divided by common photoelectric current I, to remove carrier variation bring shadow
It rings.LPGE/I variation with temperature trend after linearly polarized light LPGE is normalized with common photoelectric current I is as shown in Figure 4.
In the present embodiment, the step S3 can be divided into two specific steps of S31 and S32:
Step S31: regulate and control the linear polarization photogenerated current flow of semiconductor two-dimensional electron gas by changing the wavelength of incident laser.
Sample is placed in Dewar bottle in embodiment, and injects liquid nitrogen in Dewar bottle, by being made of Dewar bottle and temperature-controlled cabinet
Temperature-controlling system control sample temperature from 77K to the variation of room temperature 300K.By controlling the switch of 532nm laser, so that
532nm wavelength laser is incident on sample.Wherein laser is more 30 ° incident, and plane of incidence is as shown in Figure 3.
Step S32: changing the polarization state for being incident on 532nm wavelength laser on sample, and sample is made to generate linear polarization photoelectricity
Stream.Specific optical path is as shown in Figure 2.Laser is after chopper, in polarization direction and the polarizer for making laser by the polarizer
Polarization direction it is consistent, be then radiated on sample after quarter-wave plate.Wherein the edge of sample is parallel to crystal
[110] and [10] crystal orientation is that [100] crystal orientation deposited a pair of of indium electrode in the diagonal direction of sample.Indium electrode deposition is completed
Afterwards, it anneals 15 minutes in vacuum at 420 DEG C.It burn-ons on indium electrode again silver wire, silver wire is connected the preposition amplification of access with conducting wire
Device is to obtain linearly polarized light current signal.The angle of laser and sample is 60 ° in the present embodiment, and the plane of incidence of laser is such as
Shown in Fig. 3.By step motor control quarter-wave wave plate with 5 ° of each step-length in example, corotation crosses 360 °, due to wave
Piece rotation, is incident on the mechanical periodicity between linearly polarized light and linearly polarized light of the laser on sample.Sample is resulting to be turned with wave plate
It moves synchronous signal and inputs computer after preamplifier and lock-in amplifier.532nm is extracted by formula fitting later
Linear polarization photogenerated current flow signal under optical maser wavelength irradiation.Re-test sample under laser irradiation and add 1V voltage when normal light
Electric current I normalizes the common photoelectric current I of linearly polarized light, i.e., by the linear polarization photogenerated current flow LPGE signal measured divided by common
Photoelectric current I is influenced with removing carrier variation bring.LPGE/I of the linearly polarized light LPGE after common photoelectric current I normalization
Variation with temperature trend is as shown in Figure 5.
Fig. 4 is that linearly polarized light sends a telegraph stream and varies with temperature in a kind of change GaAs/AlGaAs two-dimensional electron gas of the present invention
Result measured by the embodiment of gesture method.Optical path used is tested as shown in Fig. 2, laser light incident plane is as shown in figure 3, wherein swash
The angle of light and sample is 60 °.As shown in Figure 4 with the rising of temperature, the line surveyed under the irradiation of 1064nm wavelength laser is inclined
The photogenerated current flow that shakes increases.
Fig. 5 is that linearly polarized light sends a telegraph stream and varies with temperature in a kind of change GaAs/AlGaAs two-dimensional electron gas of the present invention
Result measured by the embodiment of gesture method.Optical path used is tested as shown in Fig. 2, laser light incident plane is as shown in figure 3, wherein swash
The angle of light and sample is 60 °.As shown in Figure 5 with the rising of temperature, the linear polarization surveyed under the irradiation of 532nm wavelength laser
Photogenerated current flow reduces.
In Fig. 4, the linear polarization photogenerated current flow surveyed under the irradiation of 1064nm wavelength laser increases with the raising of temperature,
In Fig. 5, the linear polarization photogenerated current flow surveyed under the irradiation of 532nm wavelength laser is reduced with the raising of temperature.By Fig. 4 Fig. 5
It is found that different laser wavelength of incidence can effectively adjust the linear polarization photogenerated current flow of semiconductor two-dimensional electron gas.
The original for regulating and controlling the linear polarization photogenerated current flow of semiconductor two-dimensional electron gas by changing laser wavelength of incidence in this example
Manage as follows: 1064nm wavelength laser causes the intersubband of carrier to excite, and 1064nm wavelength laser is by semiconductor two-dimensional electron gas
In conduction band in the electron excitation to higher energy level of lower level.532nm wavelength laser causes the interband of carrier to excite,
Carrier in valence band is energized into conduction band up.The laser of 1064nm wavelength will form triangle on the interface of GaAs and AlGaAs
The electronics of conduction band is energized into more high level up by low-lying level in trap.The linearly polarized light electric current and three of 1064nm optical maser wavelength excitation
Electronics in the trap of angle is closely related.Temperature increases so that the triangle trap at the interface GaAs and AlGaAs broaden, electricity in two-dimensional electron gas
Sub- concentration declines, and the linearly polarized light electric current measured under 1064nm optical maser wavelength is in rising trend due to triangle trap with the raising of temperature
In carrier concentration rise with temperature and reduce, the random scattering between carrier reduces, therefore leads to semiconductor two
The linear polarization photogenerated current flow of dimensional electron gas increases.However in 532nm wavelength laser incidence, 532nm wavelength laser by electronics by
Valence enters conduction band, and the electronics in conduction band crosses potential barrier under thermal excitation and enters Quantum Well, and electronics is in thermal excitation when temperature is high
Under cross potential barrier enter Quantum Well probability it is higher, cause the electron number in triangle trap to increase, compensate for and lead since temperature raises
The electron concentration of cause reduces effect, and increases the disordered chain between carrier with temperature and increase, therefore 532nm optical maser wavelength
Under the linearly polarized light electric current that measures rise with temperature it is on a declining curve.Thus as shown in Figure 4 and Figure 5, in 1064nm wavelength laser
Lower the surveyed linear polarization photogenerated current flow of irradiation increases with the raising of temperature, and the line surveyed under the irradiation of 532nm wavelength laser is inclined
Vibration photogenerated current flow is reduced with the raising of temperature.
The foregoing is merely presently preferred embodiments of the present invention, all equivalent changes done according to scope of the present invention patent with
Modification, is all covered by the present invention.
Claims (3)
1. linearly polarized light sends a telegraph the method that stream varies with temperature trend in a kind of change GaAs/AlGaAs two-dimensional electron gas, special
Sign is: the following steps are included:
Step S1: GaAs/AlGaAs semiconductor two-dimensional electron gas sample is grown with molecular beam epitaxial device；
Step S2: making laser wavelength of incidence 1064nm, sample be placed in Dewar bottle, makes sample temperature by 77K to room temperature
300K variation, the linear polarization photogenerated current flow that measurement sample varies with temperature；
Step S3: making laser wavelength of incidence 532nm, sample be placed in Dewar bottle, makes sample temperature by 77K to room temperature 300K
Variation, the linear polarization photogenerated current flow that measurement sample varies with temperature；
Step S2 includes following two step:
Step S21: the wavelength by changing incident laser is sent a telegraph to regulate and control the linearly polarized light of GaAs/AlGaAs two-dimensional electron gas
Stream；
Step S22: changing the polarization state for being incident on 1064nm laser on sample, and sample is made to generate linearly polarized light electric current；Later
The linear polarization photogenerated current flow signal under the irradiation of 1064nm wavelength laser is extracted by formula fitting, re-test sample shines in laser
Penetrate down and add 1V voltage when common photoelectric current I, the common photoelectric current I of linearly polarized light is normalized, i.e., the linear polarization that will be measured
Photogenerated current flow LPGE signal is influenced with removing carrier variation bring divided by common photoelectric current I, obtains linearly polarized light LPGE use
LPGE/I variation with temperature trend after common photoelectric current I normalization；
Step S3 includes following two step:
Step S31: regulate and control the linear polarization photogenerated current flow of semiconductor two-dimensional electron gas by changing the wavelength of incident laser；
Step S32: changing the polarization state for being incident on 532nm wavelength laser on sample, and sample is made to generate linearly polarized light electric current；It
The linear polarization photogenerated current flow signal under the irradiation of 532nm optical maser wavelength is extracted by formula fitting afterwards；
Re-test sample under laser irradiation and add 1V voltage when common photoelectric current I, the common photoelectric current I of linearly polarized light is returned
One changes, i.e., by the linear polarization photogenerated current flow LPGE signal measured divided by common photoelectric current I, to remove carrier variation bring shadow
It rings, obtains the LPGE/I variation with temperature trend after linearly polarized light LPGE is normalized with common photoelectric current I.
2. linearly polarized light sends a telegraph stream with temperature in a kind of change GaAs/AlGaAs two-dimensional electron gas according to claim 1
The method of variation tendency, it is characterised in that: step S1 specifically: grow semiconductor amount on gaas substrates with molecular beam epitaxy
Sub- trap sample；The growth course of sample are as follows: 10 period GaAs/Al are grown first on sample0.3Ga0.7As superlattices are as slow
Layer is rushed, regrowth is greater than 1 μm of GaAs buffer layer, then grows the Al of 30nm thickness0.3Ga0.7As regenerates after carrying out Si- δ doping
The Al of long 50nm thickness0.3Ga0.7As finally grows the GaAs of 10nm thickness；The semiconductor quantum well specimen material is monocrystalline
GaAs/AlGaAs, and two-dimensional electron gas is formed on the contact surface of the two.
3. linearly polarized light sends a telegraph stream with temperature in a kind of change GaAs/AlGaAs two-dimensional electron gas according to claim 1
The method of variation tendency, it is characterised in that: the control of sample temperature passes through Dewar bottle and temperature control in the step S2 and step S3
The temperature-controlling system of case composition is controlled.
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| JPS6292487A (en) * | 1985-10-18 | 1987-04-27 | Fujitsu Ltd | Photoluminescence evaluating device |
| CN101740655A (en) * | 2009-12-09 | 2010-06-16 | 中国科学院半导体研究所 | Photovoltaic inas quantum dot infrared detector structure |
| CN103618211A (en) * | 2013-11-18 | 2014-03-05 | 北京工业大学 | Surface liquid crystal-vertical-cavity surface emitting laser and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6292487A (en) * | 1985-10-18 | 1987-04-27 | Fujitsu Ltd | Photoluminescence evaluating device |
| CN101740655A (en) * | 2009-12-09 | 2010-06-16 | 中国科学院半导体研究所 | Photovoltaic inas quantum dot infrared detector structure |
| CN103618211A (en) * | 2013-11-18 | 2014-03-05 | 北京工业大学 | Surface liquid crystal-vertical-cavity surface emitting laser and manufacturing method thereof |
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| CN106611707A (en) | 2017-05-03 |
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