CN110164989A - N型AlxGa1-xAs材料体系半导体表面欧姆接触电极及其制作方法 - Google Patents
N型AlxGa1-xAs材料体系半导体表面欧姆接触电极及其制作方法 Download PDFInfo
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Abstract
本发明公开了一种不同Al组分的N型AlxGa1‑xAs材料体系半导体表面欧姆接触电极及其制作方法,当Al组分大于等于0小于等于0.1时,可以采取金属In作为电极材料,通过快速热退火,将其粘合在AlGaAs表面,从而实现AlGaAs材料与金属电极间的欧姆接触,当Al组分大于等于0小于等于1时,均可采用磁控溅射Ni/AuGe/Ni/Au后进行合金的办法,从而实现AlGaAs与电极的欧姆接触。本发明对于N型AlxGa1‑xAs材料,根据不同的Al组分选取不同镀电极办法实现欧姆接触,降低工艺难度,减少制作成本,欧姆接触的实现,使金属与半导体的接触不影响器件的电流‑电压特性,增强器件的稳定性。
Description
技术领域
本发明属于半导体材料领域,尤其涉及一种N型AlxGa1-xAs材料体系半导体表面欧姆接触电极及其制作方法。
背景技术
AlxGa1-xAs作为一种Ⅲ-Ⅴ族半导体,因其优异的光学与电学性能,被当今世界认为是重要的光电子和电子的基础材料之一。以其为基础材料制备的光电器件、微波器件、太阳能电池等被广泛应用于军事、信息技术等领域。在AlxGa1-xAs材料的应用与器件制作过程中,都需要利用与金属接触实现互联,从而实现输入或输出电流的目的。根据半导体物理理论,金属与半导体形成接触(金半接触)后,由于功函数的差异,载流子会出现运动,最后形成势垒而达到平衡状态。金半接触通常分为肖特基和欧姆两种接触类型。肖特基接触与pn结的I-V特性类似(如图1(a)),表现为整流特性。欧姆接触则与固定电阻的电学特性一致,I-V特性为一条过原点的直线(如图1(b)),因不产生明显的附加阻抗,且不会使半导体内部的平衡载流子浓度发生显著的变化,即电流-电压特性是由样品的电阻决定的。在理想的条件下,欧姆接触所形成的电阻值很小,特别是与器件的体电阻相比,几乎可以忽略。因此,如何实现AlGaAs材料体系的金属和半导体的欧姆接触就成为有待解决的重要问题。目前AlGaAs半导体表面欧姆接触电极,通常采用在AlGaAs表面外延几十纳米的高掺杂GaAs层作为接触层,这种办法使外延过程复杂。此外,在制作AlGaAs表面欧姆接触时,未对不同Al组分选取不同办法,使制作电极成本增加。
金半接触的电阻与两者的接触势垒、接触金属性质及半导体接触层的掺杂有关,需要选用合适的金属以及严格控制工艺参数来保障欧姆接触的实现。本申请研究发现,实验中在Al的组分大于等于0小于等于0.1时,可以采用In作为电极,通过热退火的办法,对其进行合金,从而实现AlGaAs材料与In之间的欧姆接触。但随着Al组分的增大,AlGaAs材料禁带宽度变宽,难以实现欧姆接触,此时就需要采用NiAuGe电极。
发明内容
为了解决AlGaAs材料体系半导体表面欧姆接触电极制备过程复杂以及制作电极成本高的问题,本发明提供了一种新的N型AlxGa1-xAs材料体系半导体表面欧姆接触电极及其制作方法,以简单低成本实现半导体N型AlxGa1-xAs材料体系良好的电学接触。
为了实现上述目标,本发明采用如下技术方案:
一种N型AlxGa1-xAs材料体系半导体表面欧姆接触电极,当Al的组分0≤x≤0.1时,AlxGa1-xAs上为In层;
当Al的组分0≤x≤1时,AlxGa1-xAs上依次为第一Ni层、AuGe层、第二Ni层和Au层。
进一步地,当Al的组分0≤x≤0.1时,In层的厚度为0.8~1.2mm;
当Al的组分0≤x≤1时,第一Ni层的厚度为4~6nm、AuGe层的厚度为95~105nm、第二Ni层的厚度为43~47nm、Au层的厚度为285~315nm。
进一步地,当Al的组分0≤x≤0.1时,In层的厚度为1mm;
当Al的组分0≤x≤1时,第一Ni层的厚度为5nm、AuGe层的厚度为100nm、第二Ni层的厚度为45nm、Au层的厚度为300nm。
一种N型AlxGa1-xAs材料体系半导体表面欧姆接触电极的制作方法,方法包括以下步骤:
当Al的组分0≤x≤0.1时,采用将In粒粘在AlxGa1-xAs样品表面后合金形成欧姆接触电极(In本身质地较软,可塑性较强,可以压成片,将In粒放在AlGaAs表面,轻压即可实现粘覆,通过合金,使In融化后又凝固,实现更稳固的粘覆);
当Al的组分0≤x≤1时,均可采用磁控溅射法在AlxGa1-xAs样品表面依次制备第一Ni层、AuGe层、第二Ni层和Au层后进行合金形成欧姆接触电极。
进一步地,当Al的组分0≤x≤0.1时,合金的温度为240~260℃,合金的时间为360s~420s;
当Al的组分0≤x≤1时,合金的温度为410~430℃,合金的时间为290~310s。
进一步地,当Al的组分0≤x≤0.1时,合金的温度为250℃,合金的时间为420s;
当Al的组分0≤x≤1时,合金的温度为420℃,合金的时间为300s。
进一步地,当Al的组分0≤x≤0.1时,合金在氮气气氛中进行,氮气流量为3SLPM;
当Al的组分0≤x≤1时,磁控溅射在氮气氛围下进行,溅射时的工作气压为5E-4Pa,溅射第一Ni层和第二Ni层的功率为160W~170W,溅射AuGe层的功率为65W~70W,溅射Au层的功率为90W~95W;合金在氮气气氛中进行,氮气流量为3SLPM。
本发明的有益效果是:对于不同组分的N型AlxGa1-xAs材料,根据不同的Al组分选取不同镀电极办法实现欧姆接触,降低工艺难度,减少制作成本,欧姆接触的实现,使金属与半导体的接触不影响器件的电流-电压特性,增强器件的稳定性。
附图说明
图1为金半接触的两种I-V特性曲线,其中(a)为肖特基接触,(b)为欧姆接触;
图2为磁控溅射电极时对N型AlxGa1-xAs处理的示意图;
图3为实施例一中对N型Al0.1Ga0.9As采用退火In电极和溅射NiAuGe电极两种方法镀电极后的I-V测试图,其中(a)(b)为采用退火In电极方法镀电极的I-V测试图,(c)(d)为采用溅射NiAuGe电极方法镀电极的I-V测试图;
图4为实施例二中对N型Al0.45Ga0.55As采用退火In电极和溅射NiAuGe电极两种方法镀电极后的I-V测试图,其中(a)(b)为采用退火In电极方法镀电极的I-V测试图,(c)(d)为采用溅射NiAuGe电极方法镀电极的I-V测试图;
图5为实施例三中对N型Al0.9Ga0.1As采用退火In电极和溅射NiAuGe电极两种方法镀电极后的I-V测试图,其中(a)(b)为采用溅射NiAuGe电极方法镀电极的I-V测试图。
具体实施方式
为了更好的理解本发明的内容,下面结合附图对本发明的具体实施案例进行详细阐述,以使本发明的优点和特征能更易于被本领域技术人员理解,从而对本发明的保护范围做出更为清楚明确的界定。
实施例一
本实施例中,N型Al0.1Ga0.9As为采用MOVPE技术外延得到,对N型Al0.1Ga0.9As分别采用In电极和NiAuGe电极两种办法进行镀电极,I-V测试如图3所示。采用In电极时,将四个体积大约为1mm3的In粒粘在Al0.1Ga0.9As的四角,然后在氮气的气氛下进行合金,氮气流量为3SLPM,合金时间为250℃,合金温度为420s。采用NiAuGe电极时,将Al0.1Ga0.9As置于磁控溅射托盘,使用铝箔纸十字交叉覆盖于Al0.1Ga0.9As之上,并使用高温胶带对铝箔纸进行固定,留出四角溅射电极,如图2所示,磁控溅射在氮气气氛中依次制备第一Ni层、AuGe层、第二Ni层和Au层,氮气气压为5E-4Pa,第一Ni层的厚度为5nm、AuGe层的厚度为100nm、第二Ni层的厚度为45nm、Au层的厚度为300nm;然后在氮气的气氛下进行合金,氮气流量为3SLPM,合金时间为420℃,合金温度为300s。
两种电极I-V测试如图3所示,根据图3(a)(b)可得,采用In电极,I-V测试表现为过原点的直线,说明电极与样品形成欧姆接触;根据图3(c)(d)可得,采用NiAuGe电极,I-V测试表现为过原点的直线,说明电极与样品形成欧姆接触。
实施例二
本实施例中,N型Al0.45Ga0.55As为采用MOVPE技术外延得到,对其分别采用In电极和NiAuGe电极两种办法,对N型Al0.45Ga0.55As进行镀电极。采用In电极时,将四个体积大约为1mm3的In粒粘在Al0.45Ga0.55As的四角,然后在氮气的气氛下进行合金,氮气流量为3SLPM,合金时间为250℃,合金温度为420s。采用NiAuGe电极时,将Al0.45Ga0.55As置于磁控溅射托盘,使用铝箔纸十字交叉覆盖于Al0.45Ga0.55As之上,并使用高温胶带对铝箔纸进行固定,留出四角溅射电极,如图2所示,磁控溅射在氮气气氛中依次制备第一Ni层、AuGe层、第二Ni层和Au层,氮气流量为3SLPM,第一Ni层的厚度为5nm、AuGe层的厚度为100nm、第二Ni层的厚度为45nm、Au层的厚度为300nm;然后在氮气的气氛下进行合金,氮气流量为3SLPM,合金时间为420℃,合金温度为300s。
两种电极I-V测试如图4所示,根据图4(a)(b)可得,采用In电极,I-V测试表现为与pn结I-V测试类似的曲线,说明电极与样品形成肖特基接触;根据图4(c)(d)可得,采用NiAuGe电极,I-V测试表现为过原点的直线,说明电极与样品形成欧姆接触。
实施例三
本实施例中,N型Al0.9Ga0.1As为采用MOVPE技术外延得到,对其分别采用In电极和NiAuGe电极的两种办法,对N型Al0.9Ga0.1As进行镀电极。采用In电极时,将四个体积大约为1mm3的In粒粘在Al0.9Ga0.1As的四角,然后在氮气的气氛下进行合金,氮气流量为3SLPM,合金时间为250℃,合金温度为420s。采用NiAuGe电极时,将Al0.9Ga0.1As置于磁控溅射托盘,使用铝箔纸十字交叉覆盖于Al0.9Ga0.1As之上,并使用高温胶带对铝箔纸进行固定,留出四角溅射电极,如图2所示,磁控溅射在氮气气氛中依次制备第一Ni层、AuGe层、第二Ni层和Au层,氮气流量为3SLPM,第一Ni层的厚度为5nm、AuGe层的厚度为100nm、第二Ni层的厚度为45nm、Au层的厚度为300nm;然后在氮气的气氛下进行合金,氮气流量为3SLPM,合金时间为420℃,合金温度为300s。
因Al0.9Ga0.1As电阻较大,采用In电极时,I-V测试失败。图5(a)(b)为采用NiAuGe电极进行的I-V测试,其I-V测试表现为过原点的直线,说明电极与样品形成欧姆接触。
此以上所述仅为本发明的具体实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明的前提下,还可以做出若干改进和润饰,这些改进和润饰也应该作为本发明的保护部分。
Claims (7)
1.一种N型AlxGa1-xAs材料体系半导体表面欧姆接触电极,其特征在于,当Al的组分0≤x≤0.1时,AlxGa1-xAs上为In层;
当Al的组分0≤x≤1时,AlxGa1-xAs上依次为第一Ni层、AuGe层、第二Ni层和Au层。
2.根据权利要求1所述的N型AlxGa1-xAs材料体系半导体表面欧姆接触电极,其特征在于,当Al的组分0≤x≤0.1时,所述In层的厚度为0.8~1.2mm;
当Al的组分0≤x≤1时,所述第一Ni层的厚度为4~6nm、所述AuGe层的厚度为95~105nm、所述第二Ni层的厚度为43~47nm、所述Au层的厚度为285~315nm。
3.根据权利要求2所述的N型AlxGa1-xAs材料体系半导体表面欧姆接触电极,其特征在于,当Al的组分0≤x≤0.1时,所述In层的厚度为1mm;
当Al的组分0≤x≤1时,所述第一Ni层的厚度为5nm、所述AuGe层的厚度为100nm、所述第二Ni层的厚度为45nm、所述Au层的厚度为300nm。
4.一种N型AlxGa1-xAs材料体系半导体表面欧姆接触电极的制作方法,其特征在于,方法包括以下步骤:
当Al的组分0≤x≤0.1时,采用将In粒粘在AlxGa1-xAs样品表面后合金形成欧姆接触电极;
当Al的组分0≤x≤1时,采用磁控溅射法在AlxGa1-xAs样品表面依次制备第一Ni层、AuGe层、第二Ni层和Au层后进行合金形成欧姆接触电极。
5.根据权利要求4所述的N型AlxGa1-xAs材料体系半导体表面欧姆接触电极的制作方法,其特征在于,当Al的组分0≤x≤0.1时,所述合金的温度为240~260℃,所述合金的时间为360~420s;
当Al的组分0≤x≤1时,所述合金的温度为410~430℃,所述合金的时间为290~310s。
6.根据权利要求5所述的N型AlxGa1-xAs材料体系半导体表面欧姆接触电极的制作方法,其特征在于,当Al的组分0≤x≤0.1时,所述合金的温度为250℃,所述合金的时间为420s;
当Al的组分0≤x≤1时,所述合金的温度为420℃,所述合金的时间为300s。
7.根据权利要求4所述的N型AlxGa1-xAs材料体系半导体表面欧姆接触电极的制作方法,其特征在于,当Al的组分0≤x≤0.1时,所述合金在氮气气氛中进行,所述氮气流量为3SLPM;
当Al的组分0≤x≤1时,所述磁控溅射在氮气氛围下进行,溅射时的工作气压为5E-4Pa,溅射所述第一Ni层和第二Ni层的功率为160W~170W,溅射所述AuGe层的功率为65W~70W,溅射所述Au层的功率为90W~95W;所述合金在氮气气氛中进行,所述氮气流量为3SLPM。
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