CN110164891A - Imaging sensor and forming method thereof - Google Patents
Imaging sensor and forming method thereof Download PDFInfo
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- CN110164891A CN110164891A CN201910424954.8A CN201910424954A CN110164891A CN 110164891 A CN110164891 A CN 110164891A CN 201910424954 A CN201910424954 A CN 201910424954A CN 110164891 A CN110164891 A CN 110164891A
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- 238000000034 method Methods 0.000 title claims abstract description 50
- 238000003384 imaging method Methods 0.000 title claims abstract description 49
- 239000000463 material Substances 0.000 claims abstract description 150
- 238000002955 isolation Methods 0.000 claims abstract description 90
- 239000000758 substrate Substances 0.000 claims abstract description 83
- 238000005286 illumination Methods 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 11
- 230000003595 spectral effect Effects 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 139
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 230000000295 complement effect Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910052735 hafnium Inorganic materials 0.000 description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/1469—Assemblies, i.e. hybrid integration
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Abstract
A kind of imaging sensor and forming method thereof, structure includes: substrate, the substrate includes opposite the first face and the second face, and the substrate includes adjacent the first pixel region and the second pixel region, has the first isolated area between first pixel region and the second pixel region；The first filter layer positioned at second face of the first pixel region surface, the material of first filter layer are the first filter material；The second filter layer positioned at second face of the second pixel region surface, the material of second filter layer are the second filter material；The first deep trench isolation structure in first isolated area, the top of the first deep trench isolation structure is located at the surface in second face of substrate, the material of the first deep trench isolation structure includes third filter material, third filter material is different from the first filter material, and third filter material is different from the second filter material.The performance of described image sensor is improved.
Description
Technical field
The present invention relates to field of semiconductor manufacture more particularly to a kind of imaging sensor and forming method thereof.
Background technique
Imaging sensor is a kind of semiconductor devices for converting optical signal into electric signal.Imaging sensor is divided into complementary gold
Belong to oxide (Complementary Metal Oxide Semiconductor, abbreviation CMOS) imaging sensor and charge coupling
Clutch part (Charge-coupled Device, abbreviation CCD) imaging sensor.Complementary metal oxide image sensor has
Simple process, be easy to integrated other devices, small in size, light-weight, small power consumption and it is at low cost the advantages that.Therefore, as image passes
The development of sense technology, complementary metal oxide image sensor replace ccd image sensor application more and more
In each electronic product.Currently, complementary metal oxide image sensor has been widely used for static digital camera, number
Video camera, medical photographic device and automobile-used photographic device etc..
Complementary metal oxide image sensor includes imaging sensor and back side illumination image sensor front-illuminated.In back-illuminated
In formula imaging sensor, light is from the back surface incident of imaging sensor on light sensitive diode into imaging sensor, thus by light
Electric energy can be converted into.
However, the performance of existing imaging sensor is to be improved.
Summary of the invention
The technical problem to be solved by the present invention is to provide a kind of imaging sensors and forming method thereof, to improve imaging sensor
Performance.
In order to solve the above technical problems, technical solution of the present invention provides a kind of imaging sensor, comprising: substrate, the lining
Bottom includes opposite the first face and the second face, and the substrate includes adjacent the first pixel region and the second pixel region, and described first
There is the first isolated area between pixel region and the second pixel region；First positioned at second face of the first pixel region surface filters
Layer, the material of first filter layer are the first filter material；The second filter positioned at second face of the second pixel region surface
Photosphere, the material of second filter layer are the second filter material；The first deep trench in first isolated area every
From structure, the top of the first deep trench isolation structure is located at the surface in second face of substrate, first deep trench every
Material from structure includes third filter material, and third filter material is different from the first filter material, and third filters
Layer material is different from the second filter material.
Optionally, the substrate further includes third pixel region, and third pixel region the second face surface is filtered with third
Layer, the material of the third filter layer are third filter material.
Optionally, the third pixel region is adjacent with the first pixel region；Described image sensor further include: be located at described the
The second isolated area between three pixel regions and the first pixel region, second isolated area is interior to have the second deep trench isolation structure,
The top of the second deep trench isolation structure is located at the surface in second face of substrate, the second deep trench isolation structure
Material includes the second filter material.
Optionally, the third pixel region is adjacent with the second pixel region；Described image sensor further include: be located at third picture
Third isolated area between plain area and the second pixel region, third deep trench isolation structure in the third isolated area, the third
The top of deep trench isolation structure is located at the surface in second face of substrate, and the material of the third deep trench isolation structure includes
First filter material.
Optionally, first filter material penetrates the light of blue wave band；And second filter material penetrates
The light of green light band；And the third filter material penetrates the light of red spectral band.
Optionally, first filter material penetrates the light of red spectral band；And second filter material penetrates
The light of green light band；And the third filter material penetrates the light of blue wave band.
Optionally, the substrate includes adjacent first area and second area, and the first area and second area
Along the first direction arrangement for being parallel to substrate surface；First pixel region and the second pixel region are located at the first area, and
First pixel region and the second pixel region arrange in the first area along the second direction for being parallel to substrate surface, described
Second direction is perpendicular to first direction；The third pixel region is located at the second area, and the third pixel region and
The second pixel region in one region is adjacent.
Optionally, the quantity of the first area is one or more；The quantity of the second area is one or more；When
When the quantity of the first area and second area is multiple, multiple first areas and multiple second areas are along the first party
To spaced.
Optionally, the first pixel region quantity in a first area is the number of one or more and the second pixel region
Amount is one or more；When the first pixel region quantity being located in a first area is multiple and the second pixel region numbers
When amount is multiple, multiple first pixel regions and multiple second pixel regions are spaced along the second direction.
Optionally, the second area further includes second pixel region, second pixel region and third pixel region phase
Neighbour, and the first pixel region in second pixel region first area is adjacent；Second face surface of second pixel region
With the second filter layer；There is third isolated area, in the third isolated area between second pixel region and third pixel region
With third deep trench isolation structure, the material of the third deep trench isolation structure includes the first filter material.
Optionally, the third pixel region quantity in a second area is the number of one or more and the 4th pixel region
Amount is one or more；When the third pixel region quantity being located in a second area is multiple and the 4th pixel region numbers
When amount is multiple, multiple third pixel regions and multiple 4th pixel regions are spaced along the second direction.
Correspondingly, technical solution of the present invention also provides a kind of method for forming any of the above-described imaging sensor, comprising: mention
For substrate, the substrate includes opposite the first face and the second face, the substrate include the first pixel region and the second pixel region with
And the first isolated area between first pixel region and the second pixel region；In second face of the first pixel region surface shape
At the first filter layer, the material of first filter layer is the first filter material；On second face of the second pixel region surface
The second filter layer is formed, the material of second filter layer is the second filter material；Is formed in first isolated area
One deep trench isolation structure, the top of the first deep trench isolation structure are located at the surface in second face of substrate, and described
The material of one deep trench isolation structure includes third filter material, and third filter material is different from the first filter material,
And third filter material is different from the second filter material.
Optionally, the forming method of the first deep trench isolation structure includes: in first isolated area of substrate second
Face surface forms the first mask layer, and first mask layer exposes first the second face of isolated area surface；With first exposure mask
Layer is exposure mask, forms the first deep trench in the first isolated area of substrate；Third filter layer material is deposited in first deep trench
Material forms the first deep trench isolation structure.
Optionally, the substrate includes first area and second area, and first pixel region is located at the first area
It is interior, there is the third pixel region adjacent with the first pixel region, the third pixel region and the first pixel region in the second area
Between have the second isolated area；The forming method of the back side illumination image sensor further include: the shape in second isolated area
At the second deep trench isolation structure, the material of the second deep trench isolation structure includes the second filter material；Described second
The forming method of deep trench isolation structure includes: to form the second mask layer, institute on second isolated area of substrate the second face surface
It states the second mask layer and exposes second the second face of isolated area surface；Using second mask layer as exposure mask, it is isolated in substrate second
The second deep trench is formed in area；Deposit the second filter material in second deep trench, formed second deep trench every
From structure.
Optionally, the substrate includes first area and second area, and second pixel region is located at the first area
It is interior, there is the third pixel region adjacent with the second pixel region, the third pixel region and the second pixel region in the second area
Between have third isolated area；The forming method of the back side illumination image sensor further include: the shape in the third isolated area
At third deep trench isolation structure, the material of the third deep trench isolation structure includes the first filter material；The third
The forming method of deep trench isolation structure includes: to form third mask layer, institute on the substrate third isolated area the second face surface
It states third mask layer and exposes the second face of third isolated area surface；Using the third mask layer as exposure mask, it is isolated in substrate third
Third deep trench is formed in area；Deposit the first filter material in the third deep trench, formed the third deep trench every
From structure.
Optionally, also there is the second pixel region in the second area, second pixel region is adjacent with third pixel region,
There is third isolated area between second pixel region and third pixel region；Third deep trench is formed in the third isolated area
Isolation structure.
Optionally, further includes: form the second filter layer on the second pixel region the second face surface.
Optionally, further includes: form third filter layer on third pixel region the second face surface.
Optionally, the method for forming first filter layer, the second filter layer and third filter layer includes: in the substrate
Second face surface forms grid layer；Form the first groove, the second groove and third groove between adjacent gate compartment, described
One groove exposes second face of the first pixel region surface, and second groove exposes second face of the second pixel region table
Face, the third groove expose second face of third pixel region surface；The first filter layer is formed in first groove；
The second filter layer is formed in second groove；Third filter layer is formed in the third groove.
Compared with prior art, technical solution of the present invention has the advantages that
In the imaging sensor that technical solution of the present invention provides, by between the first pixel region and the second pixel region
Third filter material is formed in first deep trench isolation structure, can filter out adjacent the first pixel region and the second pixel region
In: the first light of the first pixel region is entered by the first filter layer and enters the second pixel region by the second filter layer
Second light, first light cannot pass through third filter material enter it is in the second adjacent pixel region and described
Second light cannot pass through third filter material and enter in the first adjacent pixel region, to prevent the first adjacent pixel
Light crosstalk in area and the second pixel region, so that the optical crosstalk between adjacent pixel unit is effectively reduced, to improve
The quality of imaging sensor final output image, and then improve the performance of imaging sensor.
Further, by forming second in the second deep trench isolation structure between third pixel region and the first pixel region
Filter material, can filter out in adjacent third pixel region and the first pixel region: enter first by the first filter layer
First light of pixel region and the third light that third pixel region is entered by third filter layer, first light cannot be through
Cross that the second filter material enters in adjacent third pixel region and the third light cannot pass through the second filter layer material
Material enters in the first adjacent pixel region, prevents the light crosstalk in adjacent third pixel region and the first pixel region, thus
The optical crosstalk between adjacent pixel unit is effectively reduced, so that the quality of imaging sensor final output image is improved, into
And improve the performance of imaging sensor.
Further, by forming first in the third deep trench isolation structure between third pixel region and the second pixel region
Filter material, can filter out in adjacent third pixel region and the second pixel region: enter third by third filter layer
The third light of pixel region and the second light that the second pixel region is entered by the second filter layer, the third light cannot be through
Cross that the first filter material enters in the second adjacent pixel region and second light cannot pass through the first filter layer material
Material enters in adjacent third pixel region, prevents the light crosstalk in adjacent third pixel region and the second pixel region, thus
The optical crosstalk between adjacent pixel unit is effectively reduced, so that the quality of imaging sensor final output image is improved, into
And improve the performance of imaging sensor.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of imaging sensor；
Fig. 2 to Figure 11 is the schematic diagram of the section structure of one embodiment of the invention imaging sensor forming process.
Specific embodiment
As described in background, the performance of existing imaging sensor is to be improved.Now in conjunction with a kind of imaging sensor
Structure carry out analytic explanation.
Fig. 1 is a kind of structural schematic diagram of imaging sensor.
Referring to FIG. 1, described image sensor includes: substrate 100, the substrate 100 includes opposite the first face and
Two faces, the substrate 100 include pixel region and logic area (not shown)；Lining between the pixel region adjacent pixel unit
Deep trench isolation structure 101 in bottom 100；Grid layer 102 positioned at 100 second face surface of substrate；Positioned at adjacent gate compartment 102
Between filter layer 103；Lens jacket 104 positioned at 103 surface of filter layer.
In described image sensor, the material of the deep trench isolation structure 101 includes: the oxygen positioned at deep trench inner wall
SiClx layer, the silicon nitride layer positioned at the hafnium oxide layer on silicon oxide layer surface and positioned at hafnium oxide layer surface.The silicon oxide layer,
Hafnium oxide layer and silicon nitride layer form anti-reflecting layer, and the anti-reflecting layer, which has the light of adjacent pixel unit, reduces reflecting effect
Effect, so that the stray light from adjacent pixel unit is reduced or eliminated, thus 101 pairs of pictures of the deep trench isolation structure
Optical crosstalk between plain area's adjacent pixel unit has certain inhibiting effect.However the effect of the anti-reflecting layer formed is limited, because
This is limited to the optical crosstalk inhibitory effect between pixel region adjacent pixel unit, to influence imaging sensor final output figure
The quality of picture, therefore the performance of imaging sensor is to be improved.
To solve the above-mentioned problems, the present invention provides a kind of forming method of imaging sensor, by the deep trench
Filter material is formed in isolation structure 101, the light in pixel region adjacent pixel unit is filtered, to effectively reduce
Optical crosstalk between adjacent pixel unit, to improve the quality of imaging sensor final output image, and then improves
The performance of imaging sensor.
It is understandable to enable above-mentioned purpose of the invention, feature and beneficial effect to become apparent, with reference to the accompanying drawing to this
The specific embodiment of invention is described in detail.
Fig. 2 to Figure 11 is the schematic diagram of the section structure of one embodiment of the invention imaging sensor forming process.
Fig. 2 and Fig. 3 are please referred to, Fig. 3 is the overlooking structure diagram of Fig. 2, and Fig. 2 is Fig. 3 along the direction hatching SS ' and TT '
The schematic diagram of the section structure in direction, provides substrate 200, and the substrate 200 includes opposite the first face and the second face, the substrate
200 include the first pixel region A, the second pixel region B and between first pixel region and the second pixel region first every
From area E.
The substrate 200 further includes third pixel region C, and the second face surface the third pixel region C has third filter layer,
The material of the third filter layer is third filter material.
In one embodiment, the third pixel region C is adjacent with the first pixel region A；The third pixel region C and the first picture
There is the second isolated area between plain area A.
In another embodiment, the third pixel region C is adjacent with the second pixel region B；The third pixel region C and second
There is third isolated area between pixel region B.
In the present embodiment, the substrate 200 includes adjacent first area I and second area II, and firstth area
Domain I and second area II is along the first direction Y arrangement for being parallel to 200 surface of substrate；The first pixel region A and the second pixel region
B is located at the first area I, and the edge in the first area I the first pixel region A and the second pixel region B is parallel to lining
The second direction X of bottom surface is arranged, and the second direction X is perpendicular to first direction Y；The third pixel region C is located at described the
Two region II；The third pixel region C is located at the second area II, and the in the third pixel region C and first area I
Two pixel region B are adjacent.
In the present embodiment, the second area II further includes the second pixel region B, the second pixel region B and third picture
Plain area C is adjacent, and the second pixel region B is adjacent with the first pixel region A in the I of first area.
In the present embodiment, there is third isolated area H between the second pixel region B and third pixel region C.Described first
The quantity of region I is one or more, and the quantity of the second area II is one or more.In the present embodiment, described first
The quantity of region I be it is multiple, the quantity of the second area II is multiple, multiple first area I and the edge multiple second area II
The first direction Y is spaced.
The quantity of the first pixel region A in a first area I is the quantity of one or more and the second pixel region B
For one or more.In the present embodiment, the quantity of the first pixel region A in a first area I is multiple, is located at one
The quantity of the second pixel region B in a first area I be it is multiple, multiple first pixel region A and multiple second pixel region B are along described
Second direction X is spaced.
Third pixel region C quantity in a second area II is the quantity of one or more and the second pixel region B
For one or more.In the present embodiment, the third pixel region C quantity in a second area II is multiple, is located at one
The second pixel region B quantity in second area II be it is multiple, multiple third pixel region C and multiple second pixel region B are along described the
Two direction X are spaced.
In the present embodiment, the first pixel region A is subsequently formed blue light pixel region, the subsequent shape of the second pixel region B
At green light pixel region, the third pixel region C is subsequently formed feux rouges pixel region；In other embodiments, the first pixel region A
It is subsequently formed feux rouges pixel region, the second pixel region B is subsequently formed green light pixel region, and the third pixel region C is subsequently formed
Blue light pixel region.
In the present embodiment, the material of the substrate 200 is monocrystalline silicon.
In other embodiments, the substrate 200 can also be polysilicon or amorphous silicon.The material of the substrate 200 is also
It can be the semiconductor materials such as germanium, SiGe, GaAs.The substrate 200 can also be the silicon substrate on insulator, insulation
The other kinds of substrate such as germanium substrate or glass substrate on body.
In the present embodiment, the first deep trench isolation structure is formed in the first isolated area E；It is isolated in the third
Third deep trench isolation structure is formed in area H.
Referring to FIG. 4, forming the first initial deep trench 201 in the first isolated area E；In the third isolated area H
The interior initial deep trench 202 of formation third.
In the present embodiment, the described first initial deep trench 201 and the initial deep trench 202 of third are formed simultaneously；At it
In his embodiment, the first initial deep trench 201 and the initial deep trench 202 of third can not be formed simultaneously, and described first
When initial deep trench 201, the initial deep trench 202 of third are not formed simultaneously, the sequence of formation is not successive.
The first initial deep trench 201, the forming method of the initial deep trench 202 of third include: in the substrate 200
Two faces surface form the first mask layer (not shown), and first mask layer exposes the first the second face surface isolated area E and institute
State the second face third isolated area H surface；Using first mask layer as exposure mask, the first isolated area E and third isolation are etched
Area H forms the first initial deep trench 201 in the first isolated area E, and it is initial that third is formed in the third isolated area H
Deep trench 202.
Referring to FIG. 5, forming the first deep trench 205 in the first isolated area E；The shape in the third isolated area H
At third deep trench 206.
The forming method of first deep trench 205 and third deep trench 206 includes: in the described first initial deep trench
201 and the initial deep trench 202 of third inner wall formed the first deep trench isolation layer 203, in the first deep trench isolation layer 203
Surface formed the second deep trench isolation layer 204, form the first deep trench 205 in the first isolated area E, the third every
From formation third deep trench 206 in area H.
In the present embodiment, the material of the first deep trench isolation layer 203 includes silica.
The technique for forming the first deep trench isolation layer 203 includes chemical vapor deposition process or atomic layer deposition work
Skill.In the present embodiment, the technique for forming the first deep trench isolation layer 203 includes chemical vapor deposition process.
The inner wall of the described first initial deep trench 201 and the initial deep trench 202 of third formed first deep trench every
The meaning of absciss layer 203 is: forming the described first initial deep trench 201 and the initial deep trench 202 of third etching the substrate
In the process, it being influenced by etching technics, the inner wall of the first initial deep trench 201 and the initial deep trench 202 of third is rougher,
It is equal in the thickness of the first initial deep trench 201 and the isolated material of initial 202 inner wall of deep trench of third to influence subsequent deposition
Even property, so that influence deep trench isolation structure is optically isolated effect；And it is first initially deep in the first initial deep trench 201 and third
202 inner wall of groove deposits one layer of thin silica, can reduce the described first initial deep trench 201 and the initial deep trench of third
The roughness of 202 inner walls, raising is subsequent to be formed in the described first initial deep trench 201 and initial 202 inner wall of deep trench of third
Isolated material the thickness uniformity, so that improves deep trench isolation structure is optically isolated effect.
The material of the second deep trench isolation layer 204 includes hafnium (K is greater than 3.9).In the present embodiment, described
Hafnium includes hafnium oxide.
The technique for forming the second deep trench isolation layer 204 includes chemical vapor deposition process or atomic layer deposition work
Skill.In the present embodiment, the technique for forming the second deep trench isolation layer 204 includes chemical vapor deposition process.
It is in the meaning that 203 surface of the first deep trench isolation layer forms the second deep trench isolation layer 204: described the
The material of two deep trench isolation layers 204 includes hafnium, and the hafnium can reduce the electricity of the interface between adjacent pixel area
Influence of the lotus to photon in pixel region, so that the luminous sensitivity of pixel region is improved, to promote the back side illumination image sensing
The performance of device.
It is formed after first deep trench 205 and third deep trench 206, is deposited in first deep trench 205
Three filter materials form the first deep trench isolation structure；The first filter layer material is deposited in the third deep trench 206
Material, forms the third deep trench isolation structure.Specific forming process please refers to Fig. 6 to Figure 10.
Referring to FIG. 6, being formed in first deep trench 205 and third deep trench 206 and the surface of the second face of substrate
The initial third filter material layer 207.
In the present embodiment, light of the initial third filter material layer 207 through red spectral band；In other implementations
In example, light of the initial third filter material layer 207 through blue wave band.
The technique for forming the initial third filter material layer 207 includes depositing operation.
Referring to FIG. 7, removing in the third deep trench 206 and the initial third filter layer material on the second face of substrate surface
The bed of material 207 forms third filter material layer 208 in first deep trench 205, in the first isolated area E described in formation
First deep trench isolation structure.
It removes in the third deep trench 206 and the initial third filter material layer 207 on the second face of substrate surface
Method include: using CMP process to the initial third filter material layer 207 on the second face of substrate surface into
Row polishing, until exposing second face of substrate surface；The first patterned layer is formed on substrate the second face surface (not scheme
Show), first patterned layer exposes the second face third isolated area H surface；It removes in the third deep trench 206
Initial third filter material layer 207, forms third filter material layer 208 in first deep trench 205, first every
From forming the first deep trench isolation structure in area E, and third opening 210 is formed in the third isolated area H.
The first deep trench isolation structure includes third filter material layer 208, the third filter material layer 208
Through the light of red spectral band, then the first deep trench isolation structure can by the first adjacent pixel region blue light and
Green light in second pixel region is kept apart, and is effectively reduced the crosstalk of adjacent first pixel region and the second pixel region light, is mentioned
The picture quality for having risen described image sensor output, to improve the performance of described image sensor.
Referring to FIG. 8, the third opening 210 in and the second face of substrate surface, formed it is described it is initial first filter
Layer of material 211.
The initial first filter material layer 211 is opposite with the material of the initial third filter material layer 207.?
In the present embodiment, when light of the initial third filter material layer 207 through red spectral band, initial first filter layer
Light of the material layer 211 through blue wave band；In other embodiments, when the initial third filter material layer 207 penetrates
The light of blue wave band, light of the initial first filter material layer 211 through red spectral band.
Please refer to Fig. 9 and Figure 10, Figure 10 is the overlooking structure diagram of Fig. 9, Fig. 9 be Figure 10 along the direction hatching SS ' and
The schematic diagram of the section structure in the direction TT ' removes the initial first filter material layer 211 on second face of substrate surface, in institute
It states in third opening 210 and forms the first filter material layer 212, form third deep trench isolation in the third isolated area H
Structure.
In the present embodiment, the technique packet of the initial first filter material layer 211 on second face of substrate surface is removed
It includes: CMP process.
The third deep trench isolation structure includes the first filter material layer 212, the first filter material layer 212
Through the light of blue wave band, then the third deep trench isolation structure can by adjacent third pixel region feux rouges and
Green light in second pixel region is kept apart, and the crosstalk of adjacent third pixel region and the second pixel region light is effectively reduced, from
And the picture quality of described image sensor output is improved, and then improve the performance of described image sensor.
In the present embodiment, the formation sequence of the first deep trench isolation structure and the third deep trench isolation structure
There is no successive point.
Figure 11 is please referred to, after forming the first deep trench isolation structure and third deep trench isolation structure, in institute
First pixel region the second face surface is stated to form the first filter layer, form the second optical filtering on the second pixel region the second face surface
Layer, third pixel region the second face surface formed third filter layer before, further include in second face of substrate surface shape
At dielectric layer 213.In other embodiments, the dielectric layer 213 can not be formed.
The material of the dielectric layer 213 includes: silica, silicon nitride, silicon oxynitride, silicon oxide carbide, carbonitride of silicium or carbon
Silicon oxynitride.In the present embodiment, the material of the dielectric layer 213 includes silica.
The dielectric layer 213 is used to increase the transmission of light.
Please continue to refer to Figure 11, the first filter layer 215 is formed on 213 surface of the first pixel region medium A layer；Described
Second pixel region medium B layer, 213 surface forms the second filter layer 216；It is formed on 213 surface of third pixel region C dielectric layer
Third filter layer 217.
The method for forming first filter layer 215, the second filter layer 216 and third filter layer 217 includes: to be given an account of
213 surface of matter layer forms grid layer 214；The first groove (not shown), the second groove are formed between adjacent gate compartment 214 (not
Diagram) and third groove (not shown), first groove exposes 213 surface of the first pixel region medium A layer, described
Second groove exposes 213 surface of the second pixel region medium B layer, and the third groove exposes the third pixel region C
213 surface of dielectric layer；The first filter layer 215 is formed in first groove；Second is formed in second groove to filter
Layer 216；Third filter layer 217 is formed in the third groove.
After forming the first filter layer 215, the second filter layer 216 and third filter layer 217, further includes: described first
Filter layer 215, the second filter layer 216 and 217 surface of third filter layer form lens jacket 220.
The lens jacket 220 is for changing optical path, so that light enters corresponding filter layer along specific optical path.
The material of the lens jacket 220 includes: organic material or glass.
Correspondingly, the embodiment of the present invention also provide it is a kind of using the above method formed back side illumination image sensor, please after
It is continuous to refer to Figure 11, comprising:
Substrate 200, the substrate 200 include opposite the first face and the second face, and the substrate 200 includes several adjacent
First area I and the second area II；
The firstth area I includes adjacent the first pixel region A and the second pixel region B, the first pixel region A and the second picture
There is the first isolated area E between plain area B；The secondth area II includes adjacent third pixel region C and the second pixel region B, described
There is third isolated area H between third pixel region C and the second pixel region B；And in the third pixel region C and the firstth area I
The second pixel region B it is adjacent, between the third pixel region C and the second pixel region B have third isolated area H；
The first deep trench isolation structure in the first isolated area E, the interior tool of the first deep trench isolation structure
There is third filter material layer 208；Third deep trench isolation structure in the third isolated area H, the third zanjon
There is the first filter material layer 212 in recess isolating structure；
Described image sensor further include: the dielectric layer 213 positioned at 200 second face surface of substrate；Positioned at the first pixel region A
First filter layer 215 in the second face；The second filter layer 216 positioned at the second the second face pixel region B；Positioned at third pixel region C
The third filter layer 217 in two faces；Positioned at 217 surface of first filter layer 215, the second filter layer 216 and third filter layer
Lens 220.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (19)
1. a kind of imaging sensor characterized by comprising
Substrate, the substrate include opposite the first face and the second face, and the substrate includes adjacent the first pixel region and second
Pixel region has the first isolated area between first pixel region and the second pixel region；
The first filter layer positioned at second face of the first pixel region surface, the material of first filter layer are the first filter layer
Material；
The second filter layer positioned at second face of the second pixel region surface, the material of second filter layer are the second filter layer
Material；
The first deep trench isolation structure in first isolated area, the top of the first deep trench isolation structure are located at
The surface in second face of substrate, the material of the first deep trench isolation structure include third filter material, and third filters
Layer material is different from the first filter material, and third filter material is different from the second filter material.
2. imaging sensor as described in claim 1, which is characterized in that the substrate further includes third pixel region, and described
Three pixel region the second face surfaces have third filter layer, and the material of the third filter layer is third filter material.
3. imaging sensor as claimed in claim 2, which is characterized in that the third pixel region is adjacent with the first pixel region；
Described image sensor further include: the second isolated area between the third pixel region and the first pixel region, described second
There is the second deep trench isolation structure, the top of the second deep trench isolation structure is located at second face of substrate in isolated area
Surface, the material of the second deep trench isolation structure includes the second filter material.
4. imaging sensor as claimed in claim 2, which is characterized in that the third pixel region is adjacent with the second pixel region；
Described image sensor further include: the third isolated area between third pixel region and the second pixel region, the third isolation
Third deep trench isolation structure in area, the top of the third deep trench isolation structure are located at the surface in second face of substrate,
The material of the third deep trench isolation structure includes the first filter material.
5. back side illumination image sensor as described in claim 1, which is characterized in that first filter material penetrates blue light
The light of wave band；And second filter material penetrates the light of green light band；And the third filter material is through red
The light of optical band.
6. imaging sensor as described in claim 1, which is characterized in that first filter material is through red spectral band
Light；And second filter material penetrates the light of green light band；And the third filter material penetrates blue wave band
Light.
7. imaging sensor as claimed in claim 2, which is characterized in that the substrate includes adjacent first area and second
Region, and the first area and second area are along the first direction arrangement for being parallel to substrate surface；First pixel region and
Second pixel region is located at the first area, and first pixel region and the second pixel region in the first area along parallel
It is arranged in the second direction of substrate surface, the second direction is perpendicular to first direction；The third pixel region is located at described the
Two regions, and the third pixel region is adjacent with the second pixel region in first area.
8. imaging sensor as claimed in claim 7, which is characterized in that the quantity of the first area is one or more；Institute
The quantity for stating second area is one or more；When the quantity of the first area and second area is multiple, multiple first
Region and multiple second areas are spaced along the first direction.
9. imaging sensor as claimed in claim 7, which is characterized in that the first pixel region number in a first area
Amount is that the quantity of one or more and the second pixel region is one or more；When first picture being located in a first area
When plain area's quantity is multiple and the quantity of the second pixel region is multiple, multiple first pixel regions and multiple second pixel regions are described in
Second direction is spaced.
10. imaging sensor as claimed in claim 7, which is characterized in that the second area further includes second pixel
Area, second pixel region is adjacent with third pixel region, and the first pixel region phase in second pixel region first area
It is adjacent；Second face surface of second pixel region has the second filter layer；Between second pixel region and third pixel region
With third isolated area, there is third deep trench isolation structure, the third deep trench isolation structure in the third isolated area
Material include the first filter material.
11. imaging sensor as claimed in claim 10, which is characterized in that the third pixel region in a second area
Quantity is that the quantity of one or more and the 4th pixel region is one or more；When the third being located in a second area
When pixel region quantity is multiple and the quantity of the 4th pixel region is multiple, multiple third pixel regions and multiple 4th pixel regions are along institute
It is spaced to state second direction.
12. a kind of form the method such as any one of claim 1 to 11 imaging sensor characterized by comprising
Substrate is provided, the substrate includes opposite the first face and the second face, and the substrate includes the first pixel region and the second picture
Plain area and the first isolated area between first pixel region and the second pixel region；
The first filter layer is formed on the first pixel region the second face surface, the material of first filter layer is the first filter layer
Material；
The second filter layer is formed on the second pixel region the second face surface, the material of second filter layer is the second filter layer
Material；
The first deep trench isolation structure is formed in first isolated area, the top of the first deep trench isolation structure is located at
The surface in second face of substrate, the material of the first deep trench isolation structure include third filter material, and third filters
Layer material is different from the first filter material, and third filter material is different from the second filter material.
13. the forming method of imaging sensor as claimed in claim 12, which is characterized in that the first deep trench isolation knot
The forming method of structure includes: to form the first mask layer, first mask layer on first isolated area of substrate the second face surface
Expose first the second face of isolated area surface；Using first mask layer as exposure mask, first is formed in the first isolated area of substrate
Deep trench；Third filter material is deposited in first deep trench, forms the first deep trench isolation structure.
14. the forming method of imaging sensor as claimed in claim 12, which is characterized in that the substrate includes first area
And second area, first pixel region are located in the first area, have and the first pixel region phase in the second area
Adjacent third pixel region has the second isolated area between the third pixel region and the first pixel region；The back side illumination image passes
The forming method of sensor further include: the second deep trench isolation structure, second deep trench are formed in second isolated area
The material of isolation structure includes the second filter material；The forming method of the second deep trench isolation structure includes: described
The second isolated area of substrate the second face surface forms the second mask layer, and second mask layer exposes second the second face of isolated area table
Face；Using second mask layer as exposure mask, the second deep trench is formed in the second isolated area of substrate；In second deep trench
The second filter material is deposited, the second deep trench isolation structure is formed.
15. the forming method of imaging sensor as claimed in claim 12, which is characterized in that the substrate includes first area
And second area, second pixel region are located in the first area, have and the second pixel region phase in the second area
Adjacent third pixel region has third isolated area between the third pixel region and the second pixel region；The back side illumination image passes
The forming method of sensor further include: third deep trench isolation structure, the third deep trench are formed in the third isolated area
The material of isolation structure includes the first filter material；The forming method of the third deep trench isolation structure includes: described
Substrate third isolated area the second face surface forms third mask layer, and the third mask layer exposes the second face of third isolated area table
Face；Using the third mask layer as exposure mask, third deep trench is formed in substrate third isolated area；In the third deep trench
The first filter material is deposited, the third deep trench isolation structure is formed.
16. the forming method of the back side illumination image sensor as described in claims 14 or 15, which is characterized in that secondth area
Also there is the second pixel region, second pixel region is adjacent with third pixel region, second pixel region and third pixel in domain
There is third isolated area between area；Third deep trench isolation structure is formed in the third isolated area.
17. the forming method of back side illumination image sensor as claimed in claim 16, which is characterized in that further include: described
Second pixel region the second face surface forms the second filter layer.
18. the forming method of the back side illumination image sensor as described in claims 14 or 15, which is characterized in that further include:
Third pixel region the second face surface forms third filter layer.
19. the forming method of back side illumination image sensor as claimed in claim 18, which is characterized in that form first filter
The method of photosphere, the second filter layer and third filter layer includes: to form grid layer on substrate the second face surface；In adjacent gate
The first groove, the second groove and third groove are formed between compartment, first groove exposes first pixel region
Two faces surface, second groove expose second face of the second pixel region surface, and the third groove exposes described
Three the second faces of pixel region surface；The first filter layer is formed in first groove；The second filter is formed in second groove
Photosphere；Third filter layer is formed in the third groove.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110473888A (en) * | 2019-08-26 | 2019-11-19 | 上海华力集成电路制造有限公司 | The forming method and aluminum oxide film of aluminum oxide film in BSI structure image sensor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070194356A1 (en) * | 2006-01-31 | 2007-08-23 | Chang-Rok Moon | Image sensor having improved sensitivity and decreased crosstalk and method of fabricating same |
| US20150243805A1 (en) * | 2014-02-27 | 2015-08-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor device and method for forming the same |
| CN109003994A (en) * | 2018-08-03 | 2018-12-14 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
| CN109768056A (en) * | 2017-11-09 | 2019-05-17 | 台湾积体电路制造股份有限公司 | The forming method of image sensing device |
-
2019
- 2019-05-21 CN CN201910424954.8A patent/CN110164891A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070194356A1 (en) * | 2006-01-31 | 2007-08-23 | Chang-Rok Moon | Image sensor having improved sensitivity and decreased crosstalk and method of fabricating same |
| US20150243805A1 (en) * | 2014-02-27 | 2015-08-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor device and method for forming the same |
| CN109768056A (en) * | 2017-11-09 | 2019-05-17 | 台湾积体电路制造股份有限公司 | The forming method of image sensing device |
| CN109003994A (en) * | 2018-08-03 | 2018-12-14 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110473888A (en) * | 2019-08-26 | 2019-11-19 | 上海华力集成电路制造有限公司 | The forming method and aluminum oxide film of aluminum oxide film in BSI structure image sensor |
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