CN101118298A - process for manufacturing colorful filtering array - Google Patents
process for manufacturing colorful filtering array Download PDFInfo
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- CN101118298A CN101118298A CNA2006101009742A CN200610100974A CN101118298A CN 101118298 A CN101118298 A CN 101118298A CN A2006101009742 A CNA2006101009742 A CN A2006101009742A CN 200610100974 A CN200610100974 A CN 200610100974A CN 101118298 A CN101118298 A CN 101118298A
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Abstract
The present invention relates to a method for fabricating a colorful filtering array. Firstly, a base is provided and the surface of the base comprises a dielectric layer and a passive layer. Secondly, a first pattern transferring technique is performed to form a trench in the dielectric layer and the passive layer. Next, a colorful filter is formed in the trench and covered the part surface of the passive layer, and a chemical mechanical polishing technique is practiced to form a smooth surface of the colorful filter and make the surface of the colorful filter and the passive layer on the same level.
Description
Technical field
The invention relates to a kind of method of making colour filter array.
Background technology
Along with the constantly exploitation and growth of electronic goods such as digital camera, scanner, the increase that the consumption market is also lasting to the demand of Image Sensor.Generally speaking, Image Sensor commonly used has at present comprised electric charge coupling sensing element (charge coupled device, CCD sensor) and CMOS Image Sensor (CMOS image sensor, CIS) two big classes.Wherein, because the CMOS Image Sensor has low operating voltage, low power consumption and high operating efficiency, can carry out random access factors such as (random access) as required, and can be integrated in present semiconductor technology and make in a large number, therefore be subjected to the utmost point and use widely.
The light sensitivity principles of CMOS Image sensor apparatus is incident ray to be divided into the combination of various different wave length light, received by the suprabasil a plurality of photo-sensitive cells of semiconductor (optically sensitiveelement) respectively again, and be converted to different strong and weak digital signals.For example, incident light is divided into the combination of red, blue, green three coloured light lines, received by corresponding photodiode (photodiode) again, and then be converted to digital signal.Therefore, must form a colour filter array to distinguish the wavelength of incident ray in each optics sensing element top.
In relevant prior art, wherein United States Patent (USP) has disclosed a kind of utilization for No. 5510215 and has peeled off the method that (lift-off) mode is made colour filter array.Please refer to Fig. 1 to Fig. 3, Fig. 1 to Fig. 3 peels off the method synoptic diagram that mode is made colour filter array for known utilization.As shown in Figure 1, at first form a patterning photoresist layer 12, and be formed with a plurality of photo-sensitive cell (not shown) and multiple layer metal intraconnections (not shown)s that are arrayed in the substrate 10 in a substrate 10 surfaces.Then as shown in Figure 2, deposit a chromatic filter layer 14, a dichroic coating (dichroic film) for example is in substrate 10 and photoresist layer 12 surface.Carry out a stripping technology then, as shown in Figure 3, utilize a photoresist release agent to remove patterning photoresist layer 12 and the chromatic filter layer 14 that is provided with thereon, form required color filter patterns 16.
Yet when known utilization was peeled off mode and made colour filter array, the temperature that generally needs deposition chromatic filter layer in the CONTROL PROCESS reduced (degrade) or produces distortion (deformation) with the quality that prevents the colorized optical filtering material in below 150 ℃.Because the restriction of this technological temperature, therefore in the prior art, the colour filter array that the mode made comes out is peeled off in this utilization all can't effectively provide the chromatic filter layer with high optical characteristics.
Please refer to Fig. 4 to Fig. 9, Fig. 4 to Fig. 9 is that known another made the method synoptic diagram of colour filter array.As shown in Figure 4, at first provide a substrate 20, be formed with a plurality of photo-sensitive cell (not shown) and multiple layer metal intraconnections (not shown)s that are arrayed on it.Form a green filter layer 22 and a photoresist layer 24 then in regular turn in substrate 20 surfaces.Then as shown in Figure 5, carry out a pattern transfering process, utilize a patterning photomask (figure does not show) to carry out an exposure imaging technology,, and in photoresist layer 24, form a plurality of grooves 26 with patterning photoresist layer 24.As shown in Figure 6, carry out an etch process subsequently, remove the green filter layer 22 that is not covered,, remove photoresist layer 24 then to form a plurality of green color filters 23 by photoresist layer 24.
As shown in Figure 7, then deposit a blue color filter layer 28 in green color filter 23 and substrate 20 surfaces.Then as shown in Figure 8, form another photoresist layer 30 in blue color filter layer 28 surfaces, and carry out another pattern transfering process,, and in photoresist layer 30, form a plurality of grooves 32 with patterning photoresist layer 30.As shown in Figure 9, then carry out an etch process, remove the blue color filter layer 28 that is not covered, and between green color filter 23, form a plurality of blue color filters 34 by photoresist layer 30.And then remove the photoresist layer 30 of patterning.Then can repeat deposition and pattern transfering process step again, forming a plurality of Red lightscreening plates (figure do not show) between blue color filter 34 and green color filter 23, and then finish the making of a colour filter array.
Yet, because this method of making colour filter array is design transfer and the etch process that directly carries out multiple tracks on the colorized optical filtering material, therefore employed etchant will the inevasible peripheral region that corrodes each colored filter again and again in each technology, and formation many places breach, and then make the colour filter array of finishing can't have a continuous level, cause colored filter to produce the not good problem of resolution the most at last.
Therefore, how improve effectively that known utilization is peeled off or simple etching mode is made colour filter array, be an important topic now with the colored filter that promotes to having high optical characteristics.
Summary of the invention
Therefore fundamental purpose of the present invention is to provide a kind of method of making colour filter array, and the problem of the colored filter with high resolving power and high optical characteristics can't be provided because of the restriction of technology when improving known making colour filter array.
According to claim of the present invention, be to disclose a kind of method of making colour filter array.At first provide a substrate, and this substrate surface includes a dielectric layer and a passivation layer.Carry out one first pattern transfering process then, to form a groove (trench) in this dielectric layer and this passivation layer.Then form a colored filter in this groove and this passivation layer surface of cover part, and carry out a cmp (chemical mechanical polishing) technology, make this colored filter form a flat surfaces, and the surface of this colored filter is the flush with this passivation layer.
Because the present invention is prior to carrying out pattern transfering process in the substrate, in this suprabasil dielectric layer, to form a groove, and then insert a chromatic filter layer in this groove, and carry out a chemical mechanical milling tech, make this chromatic filter layer form a flat surfaces, therefore can effectively improve known stripping technology or the simple etching mode of utilizing and make colour filter array and cause the not good problem of resolution or optical characteristics.
Description of drawings
Fig. 1 to Fig. 3 peels off the method synoptic diagram that mode is made colour filter array for known utilization;
Fig. 4 to Fig. 9 is that known another made the method synoptic diagram of colour filter array;
Figure 10 to Figure 14 makes the method synoptic diagram of a colour filter array for the preferred embodiment of the present invention;
Figure 15 to Figure 24 makes the method synoptic diagram of a CMOS Image Sensor for another embodiment of the present invention.
Description of reference numerals
10 substrates, 12 patterning photoresist layers
14 chromatic filter layers, 16 color filter patterns
20 substrates, 22 green filter layers
23 green color filters, 24 photoresist layers
26 grooves, 28 blue color filter layer
30 photoresist layers, 32 groove
40 substrates of 34 blue color filters
42 dielectric layers, 44 passivation layers
46 grooves, 48 chromatic filter layers
The 60 semiconductor-based ends of 50 colored filters
62 photodiodes, 64 shallow-trench isolation
66 metal levels, 68 etching stopping layers
70 passivation layers, 72 grooves
73 green color filters, 74 metal intermetallic dielectric layer
76 grooves, 78 Red lightscreening plates
80 grooves, 82 blue color filters
84 lenticules
Embodiment
Please refer to Figure 10 to Figure 14, Figure 10 to Figure 14 makes the method synoptic diagram of a colour filter array for the present invention.As shown in figure 10, one substrate 40 at first is provided, be formed with a plurality of optical element (optical element) (not shown) and multiple layer metal intraconnections (not shown)s that are arrayed on it, formed a dielectric layer 42 and a passivation layer 44 then in regular turn in substrate 40 surfaces.
Then as shown in figure 11, carry out a pattern transfering process.For example form a patterning photoresist layer (figure does not show) earlier in passivation layer 44 surfaces, then utilize this patterning photoresist layer to be used as mask and carry out an etch process, remove the part passivation layer 44 and dielectric layer 42 that are not covered, in passivation layer 44 and dielectric layer 42, to form a groove (trench) 46 by this patterning photoresist layer.After removing patterning photoresist layer, then as shown in figure 12, deposit a chromatic filter layer 48, for example a dichroic coating is in groove 46.Wherein, chromatic filter layer 48 can be selected from red filter layer, blue color filter layer, green filter layer, dark green (cyan) filter layer, carmetta (magenta) filter layer or yellow (yellow) filter layer etc.
As shown in figure 13, carry out another pattern transfering process then, for example form a patterning photoresist layer (figure does not show) earlier in chromatic filter layer 48 surfaces, and carry out an etch process, removing the chromatic filter layer 48 do not covered, that is be positioned at the partial colour filter layer 48 on passivation layer 44 surfaces by this patterning photoresist layer.After removing patterning photoresist layer, as shown in figure 14, then carry out a cmp (chemical mechanical polishing, CMP) technology, make chromatic filter layer 48 form a flat surfaces, and the surface of chromatic filter layer 48 is the flush with passivation layer 44, and chromatic filter layer 48 is embedded in passivation layer 44 and the dielectric layer 42, and then finishes the making of a colored filter 50.Yet, be not limited to the method, the present invention can just directly carry out a chemical mechanical milling tech again in deposition chromatic filter layer 48 behind groove 46, make chromatic filter layer 48 form flat surfaces and with the flush of passivation layer 44.Then, the present invention can remove the dielectric layer 42 and passivation layer 44 around it again after colored filter 50 completes, and then repeat previous described design transfer and etching step, form the colored filter of a plurality of different colours with adjacent position, and then finish the making of a colour filter array in colored filter 50.
It should be noted that, because the present invention is prior to carrying out pattern transfering process in the substrate, in this suprabasil dielectric layer, to form a groove, and then insert a chromatic filter layer in this groove, and carry out a chemical mechanical milling tech, make this chromatic filter layer form a flat surfaces, therefore can effectively improve known stripping technology or the simple etching mode of utilizing and make colour filter array and cause the not good problem of resolution or optical characteristics.
In addition, according to a preferred embodiment of the invention, difference along with established optical element (opticalelement) in the substrate, for example be that (μ-display), the method for making of above-mentioned colour filter array can be applicable to the making of the colour filter array of CMOS Image Sensor (CIS), charge coupled cell (CCD) or liquid crystal on silicon display panel products such as (LCoS panel) for little display element of the photo-sensitive cell (opticallysensitive element) of photodiode (photodiode) etc. or reflecting electrode etc.
Be example now with the colour filter array of making in the CMOS Image Sensor.Please refer to the 15th figure to Figure 24, the 15th figure to Figure 24 makes the method synoptic diagram of a CMOS Image Sensor for the present invention.Shown in the 15th figure, semiconductor substrate 60 at first is provided, and in a plurality of shallow-trench isolation (shallow trenchisolation, STI) 64 that are used for collecting the photodiode (photodiode) 62 of light, a plurality of complementary metal oxide semiconductor (CMOS) (CMOS) transistor (figure does not show) and a plurality of isolation usefulness of the semiconductor-based ends 60 surface formation.Carry out a metal interconnecting technology then, to form a plurality of metal intermetallic dielectric layer (inter-metal dielectric in top, the semiconductor-based ends 60, IMD) 74, and have the top that multiple layer metal layer 66 is arranged at shallow-trench isolation 64 between the metal intermetallic dielectric layer 74, and a plurality of etching stopping layer 68 is arranged in the metal intermetallic dielectric layer 74 of each photodiode 62 top.Wherein, etching stopping layer 68 can be a printing opacity or light-proof material constitutes.
Then deposit one and be covered in metal level 66 and metal intermetallic dielectric layer 74 surfaces by passivation layers that material constituted (passivationlayer) 70 such as silicon nitride or monox.Carry out a pattern transfering process then, for example form a patterning photoresist layer (figure does not show) earlier on passivation layer 70, subsequently passivation layer 70 and metal intermetallic dielectric layer 74 are carried out an etch process, until corresponding etching stopping layer 68, in passivation layer 70 and metal intermetallic dielectric layer 74, to form a groove 72.It should be noted that, formed by light-proof material as etching stopping layer 68, the present invention can remove etching stopping layer 68 when etching groove 72, with prevent follow-up optical filter insert groove 72 back light effectively break-through-etch stop layers 68 and arrive corresponding photodiode 62.
After removing patterning photoresist layer, as shown in figure 16, then deposit a chromatic filter layer that is selected from red filter layer, blue color filter layer, green filter layer, dark green filter layer, carmetta filter layer or Yellow filter layer etc., for example one by the green color filter 73 that green dichroic coating constituted, in passivation layer 70 surfaces and groove 72.Then as shown in figure 17, carry out a chemical mechanical milling tech, removal is covered in the green color filter 70 on passivation layer 70 surfaces and makes the green color filter of inserting in the groove 72 73 have a flat surfaces, and the surface of inserting the green color filter 73 in the groove 72 is the flush with passivation layer 70, and colored filter 73 is embedded in passivation layer 70 and the dielectric layer 74.
Similarly, repeat above-mentioned step again, as shown in figure 18, then carry out another pattern transfering process, for example form a patterning photoresist layer (figure does not show) earlier on passivation layer 70, carry out an etch process then until corresponding etching stopping layer 68, in the passivation layer 70 in green color filter 73 left sides and metal intermetallic dielectric layer 74, to form a groove 76.
After removing patterning photoresist layer, then as shown in figure 19, deposit the chromatic filter layer of another color, for example one by the Red lightscreening plate 78 that red dichroic coating constituted, in passivation layer 70 surfaces and groove 76.Then as shown in figure 20, carry out a chemical mechanical milling tech, be covered in the Red lightscreening plate 78 on passivation layer 70 surfaces and make the Red lightscreening plates 78 that fill in the groove 76 have a flat surfaces with removal, and the surface that fills in the Red lightscreening plate 78 in the groove 76 is the flush with passivation layer 70.
Similarly, repeat above-mentioned step again, as shown in figure 21, after inserting Red lightscreening plate 78, carry out another pattern transfering process then again, form a patterning photoresist layer (figure does not show) earlier in passivation layer 70 surfaces, carry out an etch process then, in the passivation layer 70 on green color filter 73 right sides and metal intermetallic dielectric layer 74, forming a groove 80, and expose corresponding etching stopping layer 68.
Then as shown in figure 22, the chromatic filter layer of deposition one other colors, for example one by the blue color filter 82 that blue dichroic coating constituted, in passivation layer 70 surfaces and groove 80.Then as shown in figure 23, carry out a chemical mechanical milling tech, be covered in the blue color filter 82 on passivation layer 70 surfaces and make the blue color filters 82 that fill in the groove 80 have a flat surfaces with removal, and the surface that fills in the blue color filter 82 in the groove 80 is the flush with passivation layer 70.So far, finish the making of three color look filter arrays, or also can repeat above-mentioned step again,, do not add in addition at this and give unnecessary details to prepare the more colour filter array of polychrome system.
Then as shown in figure 24, form a plurality of lenticules (microlens) 84 on Red lightscreening plate 78, green color filter 73 and blue color filter 82, and by lenticule 84 effective collected light, be projeced on the photodiode 62 so that light focuses on via the optical filter of lenticule 84 and each color, and then finish the making of CMOS Image Sensor of the present invention.
In sum, be different from the method for known making colour filter array, the present invention is prior to carrying out a pattern transfering process in the substrate, in this suprabasil dielectric layer, to form a groove, and then form a colored filter in this groove, and make this colored filter form a flat surfaces by a chemical mechanical milling tech, therefore can effectively improve known stripping technology or the simple etching mode of utilizing and make colour filter array and cause the not good problem of resolution or optical characteristics.And the method for making of colour filter array of the present invention can be applicable to the technology of the colour filter array of CMOS Image Sensor (CIS), charge coupled cell (CCD) or liquid crystal on silicon display panel optical articles such as (LCoS panel).
The above only is the preferred embodiments of the present invention, and all equalizations of being done according to the present patent application claim change and modify, and all should belong to covering scope of the present invention.
Claims (14)
1. method of making colour filter array includes:
Provide a substrate, and this substrate surface includes a dielectric layer and a passivation layer;
Carry out one first pattern transfering process, to form a groove in this dielectric layer and this passivation layer;
Form a colored filter in this groove and this passivation layer surface of cover part; And
Carry out a chemical mechanical milling tech, make this colored filter form a flat surfaces, and the surface of this colored filter is the flush with this passivation layer.
2. the method for claim 1, wherein this colored filter is to be a dichroic coating.
3. the method for claim 1, wherein this colored filter comprises Red lightscreening plate, green color filter, blue color filter, dark green optical filter, carmetta optical filter and yellow filter.
4. the method for claim 1, wherein this first pattern transfering process includes in addition:
Form a patterning photoresist layer in this passivation layer surface;
Utilize this patterning photoresist layer to be used as mask, carry out an etch process, thereby in this dielectric layer and this passivation layer, form a groove; And
Remove this patterning photoresist layer.
5. the method for claim 1, wherein this method included in addition before carrying out this chemical mechanical milling tech and carries out one second pattern transfering process.
6. method as claimed in claim 5, wherein this second pattern transfering process includes in addition:
Form a patterning photoresist layer this colored filter surface in this groove;
Carry out an etch process, to remove this colored filter of part on this passivation layer; And
Remove this patterning photoresist layer.
7. the method for claim 1, wherein this method includes this dielectric layer and this passivation layer that removes around this colored filter in addition after carrying out this chemical mechanical milling tech.
8. the method for claim 1, wherein this substrate comprises complementary metal oxide semiconductor (CMOS).
9. the method for claim 1, wherein this dielectric layer is the metal intermetallic dielectric layer for a CMOS Image Sensor.
10. the method for claim 1, wherein this substrate is the silicon base for a liquid crystal on silicon display panel.
11. a CMOS Image Sensor includes:
One substrate;
A plurality of photodiodes are arranged at this substrate surface;
One dielectric layer is covered on this substrate and this photodiode;
One passivation layer is arranged at this dielectric layer surface;
A plurality of colored filters are embedded in this dielectric layer and this passivation layer and corresponding respectively this photodiode; And
A plurality of lenticules are arranged at respectively this colored filter of this passivation layer surface of part and correspondence.
12. CMOS Image Sensor as claimed in claim 11, wherein this Image Sensor includes a plurality of metal levels in addition and is arranged in this dielectric layer.
13. CMOS Image Sensor as claimed in claim 11, wherein this Image Sensor includes a plurality of CMOS transistors in addition and is arranged at this substrate surface.
14. CMOS Image Sensor as claimed in claim 11, wherein this colored filter comprises Red lightscreening plate, green color filter, blue color filter, dark green optical filter, carmetta optical filter and yellow filter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101009742A CN101118298A (en) | 2006-08-04 | 2006-08-04 | process for manufacturing colorful filtering array |
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| Application Number | Priority Date | Filing Date | Title |
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| CNA2006101009742A CN101118298A (en) | 2006-08-04 | 2006-08-04 | process for manufacturing colorful filtering array |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102331596A (en) * | 2011-10-09 | 2012-01-25 | 华映视讯（吴江）有限公司 | Colored resin composition and method for forming multicolor optical filter |
| US9097982B2 (en) | 2008-05-30 | 2015-08-04 | Asml Netherlands B.V. | Radiation system, radiation collector, radiation beam conditioning system, spectral purity filter for radiation system and method for forming a spectral purity filter |
| CN107068839A (en) * | 2017-02-16 | 2017-08-18 | 安徽芯瑞达科技股份有限公司 | A kind of multicolor luminous CSP chip manufacture methods of microminiaturization |
| CN109031751A (en) * | 2017-06-09 | 2018-12-18 | 奇景光电股份有限公司 | Colour light filtering structure and its manufacturing method |
-
2006
- 2006-08-04 CN CNA2006101009742A patent/CN101118298A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9097982B2 (en) | 2008-05-30 | 2015-08-04 | Asml Netherlands B.V. | Radiation system, radiation collector, radiation beam conditioning system, spectral purity filter for radiation system and method for forming a spectral purity filter |
| CN102331596A (en) * | 2011-10-09 | 2012-01-25 | 华映视讯（吴江）有限公司 | Colored resin composition and method for forming multicolor optical filter |
| CN102331596B (en) * | 2011-10-09 | 2013-12-04 | 华映视讯（吴江）有限公司 | Colored resin composition and method for forming multicolor optical filter |
| CN107068839A (en) * | 2017-02-16 | 2017-08-18 | 安徽芯瑞达科技股份有限公司 | A kind of multicolor luminous CSP chip manufacture methods of microminiaturization |
| CN109031751A (en) * | 2017-06-09 | 2018-12-18 | 奇景光电股份有限公司 | Colour light filtering structure and its manufacturing method |
| CN109031751B (en) * | 2017-06-09 | 2021-03-23 | 奇景光电股份有限公司 | Color filter structure and manufacturing method thereof |
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