CN110149098A - A kind of protection circuit of radio-frequency power amplifier - Google Patents

A kind of protection circuit of radio-frequency power amplifier Download PDF

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Publication number
CN110149098A
CN110149098A CN201910288289.4A CN201910288289A CN110149098A CN 110149098 A CN110149098 A CN 110149098A CN 201910288289 A CN201910288289 A CN 201910288289A CN 110149098 A CN110149098 A CN 110149098A
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voltage
transistor
circuit
protection circuit
supply voltage
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CN110149098B (en
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苏强
奕江涛
李咏乐
李平
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GUANGZHOU HUIZHI MICROELECTRONIC CO Ltd
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GUANGZHOU HUIZHI MICROELECTRONIC CO Ltd
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52Circuit arrangements for protecting such amplifiers

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

The embodiment of the invention discloses a kind of protection circuits of power amplifier, which is characterized in that the protection circuit includes at least: power control circuit and protection circuit;Wherein: the protection circuit; it is connect with the power control circuit; the protection circuit output voltage inversely and is transmitted to power control circuit by the variation for controlling the pressure drop between the variation of supply voltage and supply voltage and protection circuit output voltage;The power control circuit determines control voltage based on the protection circuit output voltage for obtaining protection circuit output voltage;It is also used to be in control base current by first crystal based on the control voltage;Wherein, the variation of the base current and the variation of supply voltage be inversely.

Description

A kind of protection circuit of radio-frequency power amplifier
Technical field
The present invention relates to a kind of protection of power amplifier protection technology field more particularly to radio-frequency power amplifier electricity Road.
Background technique
When power amplifier is under saturation operation mode, in order to meet third generation partner program (3rd Generation Partnership Project, 3GPP) agreement is to global mobile communication (Global System For Mobile Communications, GSM) system output power Power x Time template in the time domain (PVT) requirement, function The output power of rate amplifier is controlled by external voltage Vramp;Under normal circumstances, control power amplifier can be passed through Base current realizes that the output power of power amplifier changes with external voltage Vramp.When external voltage Vramp is bigger, The base current of power amplifier is bigger, and the output power of power amplifier is bigger.
However, existing base current control method, in power amplifier work (external voltage in a saturated mode Vramp is sufficiently large), the output power of power amplifier can increase with the increase of supply voltage;When output power is more than function When the limit of rate amplifier transistor, power amplifier will appear the case where blowing, and damages power amplifier, influences power amplification The reliability of device.
Summary of the invention
In view of this, the embodiment of the present invention provides a kind of protection circuit of power amplifier, that improves power amplifier can By property.
The technical solution of the embodiment of the present invention is achieved in that
The embodiment of the present invention provides a kind of protection circuit of power amplifier, includes at least: power control circuit and protection Circuit;Wherein:
The protection circuit, connect with the power control circuit, for controlling variation and the supply voltage of supply voltage The protection circuit output voltage inversely, and is transmitted to function by the variation of the pressure drop between protection circuit output voltage Rate control circuit;
The power control circuit, it is true based on the protection circuit output voltage for obtaining protection circuit output voltage Surely voltage is controlled;It is also used to be in control base current by first crystal based on the control voltage;Wherein, the base current Variation and supply voltage variation inversely.
The embodiment of the invention provides a kind of protection circuit of power amplifier, the protection circuit is included at least: power Control circuit and protection circuit;Wherein: the protection circuit is connect, for controlling supply voltage with the power control circuit Variation and supply voltage and protection circuit output voltage between pressure drop variation inversely, and by the protection circuit Output voltage is transmitted to power control circuit;The power control circuit, for obtaining protection circuit output voltage, based on described Circuit output voltage is protected to determine control voltage;It is also used to be in control base stage electricity by first crystal based on the control voltage Stream;Wherein, the variation of the base current and the variation of supply voltage be inversely.In this way, determining electricity by protection circuit The variation of pressure drop between the variation of source voltage and supply voltage and protection circuit output voltage inversely, and then is based on protecting Protection circuit output voltage and control power supply, and the relationship of control voltage and base current determine variation and the electricity of base current The variation of source voltage is inversely;In this way, base current can be limited in lower by protection circuit when supply voltage increases State makes power amplifier be in the state of the non-limit always, so that the reliability of power amplifier is improved.
Detailed description of the invention
In attached drawing (it is not necessarily drawn to scale), similar appended drawing reference can describe phase in different views As component.Similar reference numerals with different letter suffix can indicate the different examples of similar component.Attached drawing with example and Unrestricted mode generally shows each embodiment discussed herein.
Fig. 1 is electric control circuit composed structure schematic diagram in the related technology;
Fig. 2A is a kind of schematic Fig. 1 of composed structure of amplifier protection circuit provided in an embodiment of the present invention;
Fig. 2 B is a kind of schematic Fig. 2 of composed structure of amplifier protection circuit provided in an embodiment of the present invention;
Fig. 3 A is a kind of schematic Fig. 3 of composed structure of amplifier protection circuit provided in an embodiment of the present invention;
Fig. 3 B is a kind of schematic Fig. 4 of composed structure of amplifier protection circuit provided in an embodiment of the present invention;
Fig. 4 is a kind of schematic Fig. 5 of composed structure of amplifier protection circuit provided in an embodiment of the present invention;
Fig. 5 is a kind of first electric current of amplifier protection circuit and mains voltage variations curve provided in an embodiment of the present invention Schematic diagram;
Fig. 6 is a kind of first electric current of amplifier protection circuit and supply voltage and the first electricity provided in an embodiment of the present invention The change curve schematic diagram of pressure drop between pressure;
Fig. 7 is a kind of supply voltage of amplifier protection circuit and supply voltage and the first electricity provided in an embodiment of the present invention The change curve schematic diagram of pressure drop between pressure.
Specific embodiment
In the prior art, changed by the output power of base current control power amplifier with external voltage Vramp Control circuit is as shown in Figure 1.Control circuit shown in FIG. 1 includes power controller 11 and power amplifier 12.Power controller It include voltage current adapter, error amplifier, power tube M, resistance R and current sense resistor Rsense in 11;Wherein, function Rate controller 11 obtains external voltage Vramp, and the resistance R in power controller 11 by the first end of voltage current adapter First end connect and (do not showed that in figure) with power supply module, obtain supply voltage Vbat;The second end of voltage current adapter It is connect with the second end of resistance R, and the positive input of put-into error amplifier simultaneously.In addition, current sense resistor Rsense First end connect and (do not showed that in figure) with power supply module, obtain supply voltage Vbat, second end respectively with error amplifier Reverse input end and power amplifier 12 collector connection;The output end of error amplifier and the grid of power tube connect It connects;The source electrode of power tube is connect to obtain supply voltage Vbat, drain electrode and the power amplifier 12 of power tube with power supply module Base stage connection.
In control circuit shown in Fig. 1, voltage current adapter can convert external voltage Vramp to and Vramp Directly proportional electric current Ivi, electric current Ivi are converted into the positive input voltage V+ of error amplifier by resistance R, error amplifier it is defeated Voltage is Vout out, and the pressure drop of current sense resistor Rsense is Vsense, in addition, the collector current of power amplifier 12 Icc is converted into the reversed input voltage V- of error amplifier by current sense resistor Rsense.Since the void of error amplifier is short Characteristic (V+=V-), the variation of reversed following by inputting voltages forward direction input voltage and change.When external voltage Vramp voltage increases When, the output electric current Ivi of voltage current adapter becomes larger, and the positive input voltage V+ of error amplifier becomes smaller, reversed input electricity Pressure V- follows V+ to become smaller, and in order to make current sense resistor Rsense and the voltage of power amplifier connecting pin drop to V-, error is put Big device output voltage Vout is lower, and power tube drain electrode output electric current Ibase becomes larger, while the collector current of power amplifier Icc becomes larger, and output power improves;On the contrary, the reversed input voltage V- of error amplifier increases when external voltage Vramp reduces, Vsense reduces, and Vout becomes larger, and Ibase becomes smaller, and Icc becomes smaller, and the output power of power amplifier reduces.
However, when external voltage Vramp is in saturated, with the increase of supply voltage Vbat, power amplification The output power of device also persistently increases;When output power is more than the limit of power amplifier transistor, power amplifier can go out The case where now blowing damages power amplifier, influences the reliability of power amplifier.
To solve the above-mentioned problems, the embodiment of the invention provides a kind of protection circuit of power amplifier, Fig. 2 is this reality The composed structure schematic diagram of the protection circuit of a power amplifier is applied, as shown in Figure 2 A, the protection circuit 20 includes at least: function Rate control circuit 21 and protection circuit 22;Wherein:
The protection circuit 22, connect with the power control circuit 21, for controlling variation and the power supply of supply voltage The variation of pressure drop between voltage and protection circuit output voltage inversely, and the protection circuit output voltage is transmitted To power control circuit;
Specifically, it protects the input terminal of circuit 22 that can connect with power supply module, obtains supply voltage Vbat;And based on electricity Source voltage Vbat obtains the output voltage Vout of protection circuit;Therefore, the supply voltage in above scheme and protection circuit output Pressure drop between voltage is Vbat-Vout.In the present embodiment, protecting the effect of circuit is, controls the size and Vbat- of Vbat The size of Vout is inversely.
The power control circuit 21 is based on the protection circuit output voltage for obtaining protection circuit output voltage Determine control voltage;It is also used to be in control base current by first crystal based on the control voltage;Wherein, the base stage electricity The variation of stream and the variation of supply voltage are inversely.
Specifically, power control circuit 21 is connect with protection circuit 22 by conducting wire, and power control circuit 21 can be direct Protection circuit output voltage is obtained, and can determine control voltage according to the protection circuit output voltage received.In this reality It applies in example, power control circuit 21 determines that protection circuit output voltage is control electricity after getting protection circuit output voltage Pressure, that is to say, that protection circuit output voltage is that size is identical with control voltage.
In addition, the inside of power control circuit 21 has the first transistor (not showing that in figure), power control circuit 21 Voltage will be controlled by the first transistor and is converted into base current, and based on the relationship between control voltage and supply voltage, with And the characteristic of the first transistor, realize that the variation of base current is inversely proportional to the variation of supply voltage.That is, supply voltage exists When increase, base current reduces.
Further, it is based on Fig. 2A, further includes power amplifier in the protection circuit of power amplifier provided in this embodiment 23.Specifically, as shown in Figure 2 B, power amplifier 23 is connect with power control circuit 21, and power amplifier is for obtaining power The base current of control circuit, power amplifier are based on the base current and obtain output power.
In the present embodiment, by the control to protection circuit output voltage of protection circuit 22, control voltage is limited Variation relation between supply voltage, to determine variation and the supply voltage of the base current in power control circuit 21 Variation between the relationship that is inversely proportional.That is, when supply voltage Vbat increases, protection circuit 22 in the present embodiment, The base current Ibase of power amplifier can be limited in lower state, power amplifier is made to always work in the non-limit Working condition, and then improve power amplifier reliability.
An exemplary embodiment of the invention provides a kind of protection circuit of power amplifier, and Fig. 3 A is function of the embodiment of the present invention The another composed structure schematic diagram of the protection circuit of rate amplifier, as shown in Figure 3A, the protection circuit includes at least: power control Circuit 31, protection circuit 32 and power amplifier 33 processed.
The protection circuit 32 includes at least: voltage detection circuit 34 and clamp circuit 35;Wherein:
The output end of the voltage detection circuit 34 is connect with the clamp circuit 35;The clamp circuit 35 and institute The connection of power control circuit 31 is stated, power control circuit 31 is connect with power amplifier 33.
In scheme provided in this embodiment, the voltage detection circuit 34 for generating the first electric current, and is controlled Inversely, first electric current is exported to the clamp circuit for the variation of first electric current and the variation of supply voltage 35。
Specifically, voltage detection circuit 34 can connect with power supply module and (not show that in figure), obtain power supply electricity Press Vbat;And the first electric current Io is generated based on supply voltage Vbat;Then, the first electric current Io is exported, is transmitted to clamp circuit 35.Here, voltage detection circuit 34 by itself circuit connection structure, can control the variation of the first electric current of output with The variation of supply voltage is inversely.
The clamp circuit 35, for controlling between the variation of the first electric current and supply voltage and protection circuit output voltage The variation of pressure drop is proportional;It is also used to the variation of variation and supply voltage based on first electric current inversely, And the variation of the pressure drop between the variation and supply voltage and protection circuit output voltage of first electric current is proportional, Determine the variation of pressure drop between the variation of the supply voltage and supply voltage and protection circuit output voltage inversely.
Specifically, clamp circuit 35 is connect with voltage detection circuit 34 by conducting wire, is received power sense circuit and is passed The first defeated electric current Io;And the protection circuit output voltage Vout of final output is determined based on the first electric current Io.Pass through the pincers The circuit structure of position circuit controls the pressure drop between the variation of the first electric current Io and supply voltage and protection circuit output voltage The variation of (i.e. Vbat-Vout) is proportional.In this way, since the variation of supply voltage and the variation of the first electric current are inversely proportional pass System, and the variation of the pressure drop between the variation and supply voltage and protection circuit output voltage of the first electric current is proportional, because This, can determine supply voltage and supply voltage and protect the variation of the pressure drop between circuit output voltage inversely.
Further, clamp circuit 35 includes at least second transistor (not showing that in figure), is also used to based on the first electric current First voltage is obtained, and controls the variation pass directly proportional to the variation of the pressure drop between supply voltage and first voltage of the first electric current System;It is also used to obtain protection circuit output voltage by second transistor based on first voltage;And it is determined by second transistor The variation of the supply voltage and supply voltage and protection circuit output voltage between pressure drop variation inversely.
Here, second transistor is preferably the transistor of NMOS type;After clamp circuit 35 gets the first electric current Io, First voltage Vo is converted by the first electric current Io, and by the circuit structure of clamp circuit, controls Io and supply voltage and first Pressure drop Vbat-Vo between voltage directly proportional relationship.Further, since Io and Vbat are inversely proportional, Io is again with Vbat-Vo at just Than, then, Vbat and Vbat-Vo are inverse relation.In addition, protection circuit output voltage is by second transistor and first What voltage obtained, therefore, the source electrode following effect based on second transistor determines that Vbat and Vbat-Vout is inverse relation.
In scheme provided in this embodiment, power control circuit 31 includes the first transistor 301, the first transistor The preferably transistor of PMOS type.In addition, as shown in Figure 3A, power control circuit 31 further include: the second error amplifier 302, the 4th resistance 303;Wherein,
Second error amplifier 302 obtains supply voltage Vbat and the second predeterminated voltage by normal phase input end Vramp;The reverse input end of second error amplifier 302 obtains supply voltage Vbat by the 4th resistance 303;Described The output end of two error amplifiers 302 is connect with the grid of clamp circuit 35 and the first transistor 301;The first transistor 301 obtain supply voltage Vbat by source electrode;The drain electrode of the first transistor 301 is connect with the base stage of power amplifier 33;
Wherein, the first transistor 301, for generating drain electrode by the control voltage of grid and the supply voltage of source electrode Corresponding base current, and the base current is transmitted to the power amplifier.
Specifically, the positive input of the second error amplifier 302 and voltage current adapter 304 and the 5th resistance 305 First end connection, voltage current adapter 304 connect with external power supply module, the second predeterminated voltage Vramp of acquisition.5th electricity The second end of resistance 305 is connect with power supply module, obtains supply voltage Vbat.In addition, second error amplifier 302 is reversed Input terminal obtains supply voltage Vbat by the 4th resistance 303, specifically includes: the first end and power supply module of the 4th resistance 303 Connection obtains supply voltage Vbat, and second end is connect with the reverse input end of the second error amplifier 302, and the 4th resistance 303 Second end also connect with the collector of power amplifier.
Further, as can be seen that the output of the output end and the second error amplifier 302 of clamp circuit 35 from Fig. 3 A The connection of the grid of end and the first transistor 301;It is ensured that the voltage of junction is identical everywhere;That is, function The control voltage of rate control circuit 31 is to protect circuit output voltage Vout, and control voltage is also the defeated of first crystal tube grid Enter voltage.
In addition, as can be seen from Figure 3A, the source voltage of the first transistor 301 is Vbat, the grid of the first transistor 301 Voltage is Vout, it may be determined that the pressure drop Vgs=Vbat-Vout of first crystal tube grid and source electrode.In analysis above, Know that clamp circuit 35 can control the pressure between the variation of supply voltage Vbat and supply voltage and protection circuit output voltage The variation of Vbat-Vout is dropped inversely;As it can be seen that Vbat-Vout reduces when Vbat increases;First crystal tube grid with The pressure drop Vgs of source electrode is also reduced by, and according to the characteristic of PMOS tube, when Vgs reduces, the electric current of drain electrode is also reduced by, i.e., Ibase subtracts It is small.
It can see from Fig. 3 A, power control circuit passes through the drain electrode of the first transistor 301 and the base stage of power amplifier Connection, power control circuit can control the output power of power amplifier according to the base current Ibase of output.In this implementation In example, the second predeterminated voltage Vramp is external voltage, can determine the size of current of power amplifier base stage Ibase, and then control The output power of power amplifier processed, when external voltage is sufficiently large, power amplifier can work in saturation state.In this hair In bright, power amplifier works in saturation state, and supply voltage Vbat increases, and voltage detection circuit and clamp circuit can Base current Ibase clamper in the state that one lower, is caused power amplifier, clamper is mentioned in non-limit state always The reliability of high power amplifier.
It in other embodiments of the invention, can also be in power control electricity in order to ensure the first transistor is not blown Increase level shift circuit in road.As shown in Figure 3B, the power control circuit 31 further include: level shift circuit 36;Wherein:
The output end of level shift circuit 36 is connect with the grid of the first transistor 301 of power control circuit 31;Level The input terminal of shift circuit 36 is connect with the output end of the protection circuit 32;
Wherein, the level shift circuit, for controlling the voltage and first of output to 301 grid of the first transistor Pressure drop between transistor source voltage is less than the maximum working voltage of the first transistor.
Specifically, the voltage of input terminal can be moved to output end by level shift circuit 36, input terminal and output end Voltage change is consistent.Preferably, the voltage of input terminal is directly directly moved to output end by level shift circuit;It is simple to understand For in Fig. 3 B, the input voltage of level shift circuit 36 is protection circuit output voltage Vout, the output of level shift circuit 36 End voltage is Vout+Vth, so that the grid voltage for the first transistor 301 connecting with level shift circuit output end is Vout+ Vth。
In addition, level shift circuit can be controlled by the circuit structure of itself in the case where supply voltage Vbat increases System is input to the pressure drop between the voltage of first crystal tube grid and the first transistor source voltage and is less than the first transistor most Big operating voltage.That is, the Vgs of the first transistor is less than maximum working voltage.
An exemplary embodiment of the invention provides a kind of protection circuit of power amplifier, and Fig. 4 is function of the embodiment of the present invention The another composed structure schematic diagram of the protection circuit of rate amplifier, as shown in figure 4, the protection circuit includes at least: power control Circuit 41, protection circuit 42 and power amplifier 43 processed.
The protection circuit 42 further include: voltage detection circuit 44 and clamp circuit 45.
Specifically, voltage detection circuit 44 includes first error amplifier 441, third transistor 442 and the 4th crystalline substance Body pipe 443;Wherein:
The positive input of first error amplifier 441 obtains supply voltage Vbat by connecting with first resistor 444; The drain electrode of the reverse input end of first error amplifier 441 and the third transistor 442 is connect with second resistance 445 respectively, Obtain the first predeterminated voltage Vcc_i;The output end of first error amplifier 441 grid with third transistor 442 respectively, and The grid of 4th transistor 443 connects;The source grounding of the source electrode of third transistor 442 and the 4th transistor 443;The The drain electrode of four transistors 443 is connect with clamp circuit 45;
4th transistor 443, for that will drain, the first electric current Io generated is transmitted to the clamp circuit 45.
Here, the first predeterminated voltage Vcc_i is a fixed power source voltage node inside circuit, is not changed with Vbat, the Three transistors 442 and the 4th transistor 443 are preferably the transistor of NMOS type.In scheme provided by the invention, the first electricity The first end of resistance 444 is connect with power supply module, obtains supply voltage Vbat;The second end of first resistor 444 is put with first error The first end connection of the positive input and the 6th resistance 446 of big device 441;The second end of 6th resistance 446 is grounded.Wherein, The resistance value of first resistor 444 is R1, and the resistance value of the 6th resistance is R6, it may be determined that the forward direction of first error amplifier 441 Input voltage V1 is (R6/ (R1+R6)) * Vbat.Set scale coefficient a=R6/ (R1+R6).In addition, the 4th transistor 443 Grid is connect with the output end of first error amplifier, and due to the characteristic of circuit structure and transistor, the 4th transistor 443 can By the drain electrode of the drain current mirror image in third transistor 442 to the 4th transistor, the first electric current Io is generated.It needs to illustrate It is that the drain current of the drain current of third transistor and the 4th transistor has proportionate relationship.
In above-mentioned voltage detection circuit, when supply voltage Vbat increases, the forward direction of first error amplifier 441 Input voltage V1 increases, and according to the short characteristic of void of error amplifier, the reversed input voltage V2 of first error amplifier 441 also increases Greatly;Since the first predeterminated voltage Vcc_i immobilizes, then the current reduction in second resistance 445;That is third transistor 442 Drain current reduces.Simultaneously as the mirror of the 4th transistor and third transistor, the 4th transistor drain generate the One electric current Io is also decreased.By above-mentioned analysis, voltage detection circuit can control the variation and first of supply voltage The variation of electric current is inversely.
In protection circuit provided in this embodiment, clamp circuit 45 specifically includes second transistor 451,3rd resistor 452 With the first constant-current source device 453;Wherein,
3rd resistor 452 is in parallel with the first constant-current source device 453;3rd resistor 452 and the first constant-current source device 453 pass through First end in parallel obtains supply voltage;
3rd resistor and the second end of the first constant-current source device parallel connection are examined with the grid of second transistor, supply voltage respectively Slowdown monitoring circuit 44 connects;Second transistor obtains supply voltage by drain electrode;The source electrode of the second transistor and the power control Circuit connection processed;
The second transistor generates the corresponding protection circuit output voltage of source electrode for the first voltage by grid, And protection circuit output voltage is transmitted to power control circuit.
In the above scheme, the electric current of the first constant-current source is fixed value Iref, and 3rd resistor 452 is connect with second transistor The voltage at place is first voltage Vo;Clamp circuit 45 and the electric current of voltage detection circuit junction are the first electric current Io.? In the case that supply voltage Vbat increases, Io reduces, since the electric current at the first constant-current source device is constant, then in 3rd resistor Electric current then reduces;It was determined that the pressure drop in 3rd resistor reduces, i.e. Vbat-Vo reduces.That is, supply voltage Vbat Variation and the variation of Vbat-Vo be inversely proportional.Specifically, Fig. 5 be in the present embodiment the first electric current Io and supply voltage Vbat it Between relation schematic diagram.Wherein, the output electric current Iref of minimum first constant-current source device of Io, and supply voltage Vbat be greater than etc. Io=Iref when Vcc_i/a, wherein a is proportionality coefficient, and size is R6/ (R1+R6).Fig. 6 is the first electric current in the present embodiment The relationship of pressure drop Vbat-Vo between Io and supply voltage and first voltage.
Further, clamp circuit 45 can convert protection circuit output for first voltage Vo by second transistor 451 Voltage Vout;In the case where supply voltage increases, Io reduces, and Vbat-Vo reduces, and the source electrode based on second transistor follows effect It answers, so that the gap of Vout and Vbat reduces.That is, the variation of supply voltage Vbat and being changing into for Vbat-Vout are anti- Than.Pressure according to Fig. 5 and Fig. 6, in available Fig. 7 between supply voltage Vbat and supply voltage and protection circuit output voltage The relationship of Vbat-Vout drops.
In scheme provided in this embodiment, power control circuit 41 includes the first transistor 411, the second error amplifier 412, the 4th resistance 413 and level shift circuit 46;Wherein,
Second error amplifier 412 obtains supply voltage Vbat and the second predeterminated voltage by normal phase input end Vramp;The reverse input end of second error amplifier 412 obtains supply voltage Vbat by the 4th resistance 413;Described The output end of two error amplifiers 412 is connect with the input terminal of clamp circuit 45 and level shift circuit 46;Level shift circuit 46 output end is connect with the grid of the first transistor 411;And the first transistor 411 obtains supply voltage Vbat by source electrode; The drain electrode of the first transistor 411 is connect with the base stage of power amplifier 43.
Specifically, the positive input of the second error amplifier 412 and voltage current adapter 414 and the 5th resistance 415 First end connection, voltage current adapter 414 connect with external power supply module, the second predeterminated voltage Vramp of acquisition.5th electricity The second end of resistance 415 is connect with power supply module, obtains supply voltage Vbat.In addition, second error amplifier 412 is reversed Input terminal obtains supply voltage Vbat by the 4th resistance 413, specifically includes: the first end and power supply module of the 4th resistance 413 Connection obtains supply voltage Vbat, and second end is connect with the reverse input end of the second error amplifier 412, and the 4th resistance 413 Second end also connect with the collector of power amplifier.
Further, level shift circuit 46 includes: the second constant-current source device 461 and the 5th transistor 462;Wherein,
Second constant-current source device 461 obtains supply voltage Vbat by first end;
5th transistor 462 obtains third predeterminated voltage by drain electrode, passes through source electrode and the second constant-current source device 461 Second end and the first transistor 411 grid connection, pass through the output end and the second error of grid and clamp circuit 45 The output end of amplifier 412 connects.
Here, third predeterminated voltage is the difference Vbat-VT of the maximum working voltage of supply voltage and the first transistor.VT For the maximum working voltage of the first transistor.In 5th transistor, the drain electrode of Vbat-VT is powered, so that the grid of the first transistor The pressure drop Vgs maximum of pole and source electrode does not exceed VT, can control the first transistor and always works in non-limit state, to mention The reliability of high the first transistor.
In addition, the voltage of input terminal can be moved to output end, specifically, level shift circuit by level shift circuit 46 36 input voltage is protection circuit output voltage Vout, and the output end voltage of level shift circuit 36 is Vout+Vth, output Hold a big threshold voltage always than the voltage of input terminal.
In the above scheme, power amplifier works when in the saturated condition (the second predeterminated voltage Vramp is sufficiently large) When, supply voltage Vbat increases, and the first electric current Io reduces, and Vbat-Vo reduces, the source electrode following effect of second transistor, so that The gap of Vbat and Vout reduces, by level shift circuit, so that the grid of the first transistor and source voltage drop Vgs (Vgs= Vbat-Vout) reduce, so that base current Ibase reduces, the output power for controlling power amplifier is reduced, and makes power amplification Device always works in the working condition of the non-limit, and then improves the reliability of power amplifier.
It should be noted that, in this document, the terms "include", "comprise" or its any other variant are intended to non-row His property includes, so that the process, method, article or the device that include a series of elements not only include those elements, and And further include other elements that are not explicitly listed, or further include for this process, method, article or device institute it is intrinsic Element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that including being somebody's turn to do There is also other identical elements in the process, method of element, article or device.
In several embodiments provided by the present invention, it should be understood that disclosed device and method can pass through it Its mode is realized.Apparatus embodiments described above are merely indicative, for example, the division of the unit, only A kind of logical function partition, there may be another division manner in actual implementation, such as: multiple units or components can combine, or It is desirably integrated into another system, or some features can be ignored or not executed.In addition, shown or discussed each composition portion Mutual coupling or direct-coupling or communication connection is divided to can be through some interfaces, the INDIRECT COUPLING of equipment or unit Or communication connection, it can be electrical, mechanical or other forms.
Above-mentioned unit as illustrated by the separation member, which can be or may not be, to be physically separated, aobvious as unit The component shown can be or may not be physical unit;Both it can be located in one place, and may be distributed over multiple network lists In member;It can select some or all of units according to the actual needs to realize one exemplary embodiment scheme of the application Purpose.
In addition, each functional unit in various embodiments of the present invention can be fully integrated in one processing unit, it can also To be each unit individually as a unit, can also be integrated in one unit with two or more units;It is above-mentioned Integrated unit both can take the form of hardware realization, can also realize in the form of hardware adds SFU software functional unit.
Those of ordinary skill in the art will appreciate that: realize that all or part of the steps of above-described embodiment can pass through program Relevant hardware is instructed to complete, program above-mentioned can store in computer-readable storage medium, which is executing When, execution includes the steps that above-described embodiment;And storage medium above-mentioned includes: movable storage device, read-only memory (Read Only Memory, ROM), the various media that can store program code such as magnetic or disk.
If alternatively, the above-mentioned integrated unit of the present invention is realized in the form of software function module and as independent product When selling or using, it also can store in a computer readable storage medium.Based on this understanding, the present invention one shows The part that the technical solution of example property embodiment substantially in other words contributes to the relevant technologies can be in the form of software products It embodies, which is stored in a storage medium, including some instructions are used so that terminal executes sheet Apply for all or part of circuit described in each embodiment.And storage medium above-mentioned includes: movable storage device, ROM, magnetic disk Or the various media that can store program code such as CD.
The above, only embodiments of the present invention, but scope of protection of the present invention is not limited thereto, it is any to be familiar with Those skilled in the art within the technical scope of the present application, can easily think of the change or the replacement, and should all cover Within protection scope of the present invention.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.

Claims (10)

1. a kind of protection circuit of power amplifier, which is characterized in that the protection circuit includes at least: power control circuit and Protect circuit;Wherein:
The protection circuit, connect with the power control circuit, for controlling variation and supply voltage and the guarantor of supply voltage The protection circuit output voltage inversely, and is transmitted to power control by the variation of the pressure drop between protection circuit output voltage Circuit processed;
The power control circuit is determined based on the protection circuit output voltage and is controlled for obtaining protection circuit output voltage Voltage processed;It is also used to be in control base current by first crystal based on the control voltage;Wherein, the change of the base current Change and the variation of supply voltage are inversely.
2. protection circuit according to claim 1, which is characterized in that the protection circuit further includes power amplifier;Its In:
The power amplifier, connect with power control circuit, for obtaining the base current of power control circuit, and is based on institute It states base current and obtains output power.
3. protection circuit according to claim 1, it is characterised in that:
The power control circuit determines that the protection circuit output voltage is after being also used to obtain protection circuit output voltage The control voltage.
4. any protection circuit according to claim 1~3, which is characterized in that the protection circuit includes at least: power supply Voltage detecting circuit and clamp circuit;Wherein,
The output end of the voltage detection circuit is connect with the clamp circuit;The clamp circuit and the power control Circuit connection;
The voltage detection circuit for generating the first electric current, and controls variation and the supply voltage of first electric current Variation inversely, first electric current is exported to the clamp circuit;
The clamp circuit, for controlling pressure drop between the variation of the first electric current and supply voltage and protection circuit output voltage Change proportional;It is also used to the variation of variation and supply voltage based on first electric current inversely, Yi Jisuo The variation for stating the pressure drop between the variation of the first electric current and supply voltage and protection circuit output voltage is proportional, determines institute State the variation of pressure drop between the variation of supply voltage and supply voltage and protection circuit output voltage inversely.
5. protection circuit according to claim 4, which is characterized in that the clamp circuit includes at least second transistor; Wherein,
The clamp circuit for obtaining first voltage based on the first electric current, and controls variation and the supply voltage of the first electric current The variation of pressure drop between first voltage is proportional;It is also used to be protected based on first voltage by second transistor Circuit output voltage;And variation and the supply voltage and protection circuit output electricity of the supply voltage are determined by second transistor The variation of pressure drop is inversely between pressure.
6. protection circuit according to claim 5, which is characterized in that the voltage detection circuit includes: the first mistake Poor amplifier, third transistor and the 4th transistor;Wherein:
The positive input of the first error amplifier obtains supply voltage by connecting with first resistor;Described first misses The drain electrode of the reverse input end of poor amplifier and the third transistor is connect with second resistance respectively, obtains the first default electricity Pressure;The output end of the first error amplifier respectively with the grid of the third transistor and the 4th transistor Grid connection;The source grounding of the source electrode of the third transistor and the 4th transistor;The leakage of 4th transistor Pole is connect with clamp circuit;
4th transistor, for that will drain, the first electric current generated is transmitted to the clamp circuit.
7. protection circuit according to claim 5, which is characterized in that the clamp circuit further includes 3rd resistor and first Constant-current source device;Wherein,
The 3rd resistor is in parallel with first constant-current source device;The 3rd resistor and first constant-current source device pass through First end in parallel obtains supply voltage;
The 3rd resistor and first constant-current source device by second end in parallel respectively with the grid of second transistor, electricity The connection of source voltage detecting circuit;The second transistor obtains supply voltage by drain electrode;The source electrode of the second transistor with The power control circuit connection;
The second transistor, the supply voltage for first voltage and drain electrode by grid generate the corresponding protection electricity of source electrode Road output voltage, and the protection circuit output voltage is transmitted to power control circuit.
8. any protection circuit according to claim 1~3, which is characterized in that the power control circuit further include: the Two error amplifiers, the 4th resistance;Wherein,
Second error amplifier obtains supply voltage and the second predeterminated voltage by normal phase input end;Second error is put The reverse input end of big device obtains supply voltage by the 4th resistance;The output end of second error amplifier respectively with clamper Circuit is connected with the grid of the first transistor;The first transistor obtains supply voltage by source electrode;The first transistor Drain electrode connect with the base stage of the power amplifier;
The first transistor, for generating the corresponding base stage electricity that drains by the control voltage of grid and the supply voltage of source electrode Stream, and the base current is transmitted to the power amplifier.
9. any protection circuit according to claim 1~3, which is characterized in that the power control circuit further include: electricity Translational shifting circuit;Wherein:
The output end of the level shift circuit is connect with the grid of the first transistor of the power control circuit;The level The input terminal of shift circuit is connect with the output end of the protection circuit;
Wherein, the level shift circuit, for controlling the voltage and the first transistor of output to first crystal tube grid Pressure drop between source voltage is less than the maximum working voltage of the first transistor.
10. protection circuit according to claim 9, which is characterized in that the level shift circuit includes: the second constant-current source Device and the 5th transistor;Wherein,
Second constant-current source device obtains supply voltage by first end;
5th transistor obtains third predeterminated voltage by drain electrode, passes through source electrode and the second of second constant-current source device The connection of the grid of end and the first transistor passes through the output end and the second error amplifier of grid and the protection circuit Output end connection;The third predeterminated voltage is the difference of the maximum working voltage of supply voltage and the first transistor.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080211585A1 (en) * 2005-04-18 2008-09-04 Freescale Semiconductor, Inc. Adaptive Protection Circuit For a Power Amplifier
CN102439856A (en) * 2009-05-21 2012-05-02 高通股份有限公司 Adaptive parametric power amplifier protection circuit
CN205142141U (en) * 2015-11-06 2016-04-06 深圳市华乾科技有限公司 Radio frequency microwave power amplifier's standing wave protection device
CN107121999A (en) * 2017-03-09 2017-09-01 广州慧智微电子有限公司 A kind of power control circuit and power amplification circuit
US20170264253A1 (en) * 2013-07-09 2017-09-14 Oleksandr Gorbachov Power Amplifier With Input Power Protection Circuits

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2783334Y (en) * 2005-02-23 2006-05-24 华为技术有限公司 Over current detector
US8319507B2 (en) * 2010-02-08 2012-11-27 Nxp B.V. System and method for sensing an amplifier load current
DE102011106234A1 (en) * 2011-06-27 2012-12-27 Tesat-Spacecom Gmbh & Co.Kg Method and apparatus for protecting a high frequency power amplifier against mismatch
US8432228B1 (en) * 2011-07-14 2013-04-30 Anadigics, Inc. Power control circuit for radio frequency power amplifiers
CN103973237B (en) * 2014-04-30 2017-02-22 广州钧衡微电子科技有限公司 Staging overvoltage protection circuit of power amplifier

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080211585A1 (en) * 2005-04-18 2008-09-04 Freescale Semiconductor, Inc. Adaptive Protection Circuit For a Power Amplifier
CN102439856A (en) * 2009-05-21 2012-05-02 高通股份有限公司 Adaptive parametric power amplifier protection circuit
US20170264253A1 (en) * 2013-07-09 2017-09-14 Oleksandr Gorbachov Power Amplifier With Input Power Protection Circuits
CN205142141U (en) * 2015-11-06 2016-04-06 深圳市华乾科技有限公司 Radio frequency microwave power amplifier's standing wave protection device
CN107121999A (en) * 2017-03-09 2017-09-01 广州慧智微电子有限公司 A kind of power control circuit and power amplification circuit

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