CN110137354A - The measurement method and measuring device of feature sizes of semiconductor devices - Google Patents
The measurement method and measuring device of feature sizes of semiconductor devices Download PDFInfo
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- CN110137354A CN110137354A CN201910363090.3A CN201910363090A CN110137354A CN 110137354 A CN110137354 A CN 110137354A CN 201910363090 A CN201910363090 A CN 201910363090A CN 110137354 A CN110137354 A CN 110137354A
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- area
- feature dimension
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- panel
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
- G01B21/08—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness for measuring thickness
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/70—Testing, e.g. accelerated lifetime tests
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention discloses a kind of measurement methods of feature sizes of semiconductor devices, equipment and readable storage medium storing program for executing, this method comprises: being detected based on feeler switch to first area and second area, obtain the feature dimension of first area semiconductor-on-insulator device, and the feature dimension to be modified of second area semiconductor-on-insulator device, offset relationship based on first area on panel to be tested and second area, determine amendment deviation, feature dimension to be modified is modified using amendment deviation, using correction result as the feature dimension of second area semiconductor-on-insulator device.Based on measurement method provided by the invention, it is only necessary to which one-shot measurement just can obtain the feature dimension of first area and second area semiconductor-on-insulator device simultaneously, have the characteristics that measurement process is simple, time-consuming few.
Description
Technical field
The present invention relates to technical field of semiconductors more particularly to the measurement methods and survey of a kind of feature sizes of semiconductor devices
Measure equipment.
Background technique
Characteristic size (Critical Dimension) is to measure the significant dimensions of IC design and production technique, is led to
The minimum dimension for often referring to semiconductor devices in integrated circuit, such as the grid length of metal-oxide-semiconductor.
In the technique of OLED Touch, need using characteristic size scanning electron microscope (Critical
Dimension-Scanning Electron Microscope) obtain and measure effective display area domain and integrated circuit binding area
The scanning electron microscope image of domain (area IC Bonding) semiconductor-on-insulator device obtains feature dimension.Due to effective display area domain
With integrated circuit binding region there are offset, focal plane on the same plane, does not need then to obtain respectively effectively aobvious
Show that area and integrated circuit bind the scanning electron microscope image in area and measure and obtains the feature dimension of semiconductor devices.Due to
Focal plane, which does not need to obtain the process that scanning electron microscope image carries out characteristic size measurement respectively in same level, to be had
The shortcomings that time-consuming.
Summary of the invention
The present invention provides a kind of measurement method of feature sizes of semiconductor devices and measuring devices, can solve existing skill
Art carries out feature sizes of semiconductor devices and measures the technical issues of time-consuming.
The present invention provides a kind of measurement method of feature sizes of semiconductor devices, method is for measuring panel to be tested
The feature dimension of the semiconductor devices of first area and second area area, method include:
Feeler switch is set on the first area of panel to be tested, first area and second area are carried out based on feeler switch
Detection, obtains the feature dimension of first area semiconductor-on-insulator device and the spy to be modified of second area semiconductor-on-insulator device
Levy size value；
Offset relationship based on first area on panel to be tested and second area determines amendment deviation；
Feature dimension to be modified is modified using amendment deviation, correction result is led as second area upper half
The feature dimension of body device.
Further, the present invention also provides a kind of measuring device, measuring device includes that processor, memory and communication are total
Line；
Communication bus is for realizing the connection communication between processor and memory；
Processor is for executing one or more program stored in memory, to realize that semiconductor devices as above is special
The step of levying the measurement method of size.
Further, the present invention also provides a kind of readable storage medium storing program for executing, which is computer-readable deposit
Storage media, computer-readable recording medium storage have one or more program, one or more program can by one or
The step of multiple processors execute, measurement method to realize feature sizes of semiconductor devices as above.
Beneficial effect
The present invention provides a kind of measurement method of feature sizes of semiconductor devices and measuring device, which is used for
Measure the feature dimension of the semiconductor devices of first area and second area area on panel to be tested, this method comprises: to
Feeler switch is set on the first area of test panel, first area and second area are detected based on feeler switch, obtains
The feature dimension of one region semiconductor-on-insulator device and the feature dimension to be modified of second area semiconductor-on-insulator device, base
Offset relationship in first area on panel to be tested and second area determines amendment deviation, is treated using amendment deviation
Amendment feature dimension is modified, by correction result as the feature dimension of second area semiconductor-on-insulator device.Based on this
Invent the measurement method provided, it is only necessary to which the feature dimension for measuring panel first area semiconductor-on-insulator device to be tested is based on
Offset relationship between second area and first area is modified this feature size value and can obtain second area upper half and lead
The feature dimension of body device only needs one-shot measurement just can obtain first area and second area semiconductor-on-insulator device simultaneously
Feature dimension, need to measure the feature dimension of first area, second area semiconductor-on-insulator device respectively with the prior art
For, measurement process is simple and time-consuming few.
Detailed description of the invention
Fig. 1 is the flow diagram of the measurement method of the feature sizes of semiconductor devices of one embodiment of the invention；
Fig. 2 is the structural schematic diagram of the panel to be tested of one embodiment of the invention；
Fig. 3 is the structural schematic diagram of the measuring device of one embodiment of the invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, to the skill of each exemplary embodiment provided by the present invention
Art scheme is clearly and completely described.In the absence of conflict, following each embodiments and its technical characteristic can be mutual
Combination.
The present invention provides a kind of measurement method of feature sizes of semiconductor devices, this method is for measuring panel to be tested
The feature dimension of the semiconductor devices of upper first area and second area area, referring to Figure 1, this method comprises:
S101, first area and second area are detected based on feeler switch, obtains first area semiconductor-on-insulator device
Feature dimension and second area semiconductor-on-insulator device feature dimension to be modified.
It may include the step of feeler switch is set on the first area of panel to be tested before step S101.
It is to be understood that first area and second area are to need to survey semiconductor devices thereon on panel to be tested
The region of measure feature size value has offset relationship between first area and second area.Offset relationship refers to the flat of first area
Difference in height between face and the plane of second area.
Under some examples, first area, second area can be the effective display area and binding area on panel to be tested
This two different region.
Feature dimension is the significant dimensions for measuring IC design and production technique, is evaluated whether exposure mask successfully
(Mask) figure on is completely transferred to the important indicator on glass substrate.Under normal circumstances, in order to reach designer's needs
Device performance, the figure that the photoetching offset plate figure made after photoetching process will be consistent with mask design size, therefore make
Line width, the departure of line-spacing must be small as far as possible.
Feeler switch, also known as Test-key, the detection zone for measuring instrument measurement feature dimension setting.Feeler switch
Setting is on the first region.Fig. 2 is referred to, Fig. 2 is the structural schematic diagram of a panel to be tested, and 201 indicate effective display area
(first area), 202 indicate binding area (second area), and 203 on 202 indicate to be arranged on effective display area (first area)
Feeler switch.
The feature dimension of the first area semiconductor-on-insulator device detected based on feeler switch is accurately that is obtained is
The feature dimension of first area semiconductor-on-insulator device.And the second area semiconductor-on-insulator device detected based on feeler switch
Feature dimension be it is inaccurate, what is obtained is the feature dimension to be modified of second area semiconductor-on-insulator device.
It is to be understood that the present invention can be based on characteristic size scanning electron microscope or scanning electron microscope to first
Region and second area are detected.
Scanning electron microscope mainly scans on semiconductor device surface by electron beam, inspires in semiconductor device surface secondary
Grade electronics, secondary electron is related with the surface texture of semiconductor devices, and secondary electron is collected by detection body, and is flashed there
Device is changed into optical signal, then is changed into electric signal to control the intensity of electron beam on fluorescent screen, to show through photomultiplier tube
The scanning patter synchronous with electron beam out.
Characteristic size scanning electron microscope has many advantages, such as that measurement is accurate high, test rate is fast, becomes 65nm and following
Most common characteristic dimension measuring instrument in processing procedure.Compared with scanning electron microscope, characteristic size scanning electron microscope increases spy
Levy size detection module.This feature size detection module passes through the boundary of detection scanning patter, then automatic output semiconductor device
The characteristic size of part.
S102, the offset relationship based on first area on panel to be tested and second area determine amendment deviation.
S103, feature dimension to be modified is modified using amendment deviation, using correction result as second area
The feature dimension of semiconductor-on-insulator device.
Under some examples, if panel to be tested is oled panel, first area and second area (effectively display thereon
Area and binding area) between difference in height can be 15um or more；If panel to be tested is LCD panel, first area thereon with
Difference in height between second area (effective display area and binding area) can be 2~3um.
The offset relationship of first area and second area and amendment deviation have corresponding relationship, can be with by offset relationship
Determine amendment deviation.For amendment deviation for being modified to feature dimension to be modified, modified result is the secondth area
The feature dimension of domain semiconductor-on-insulator device.
Measurement method provided by the invention, it is only necessary to measure the feature ruler of panel first area semiconductor-on-insulator device to be tested
Very little value, the secondth area can be obtained by being modified based on the offset relationship between second area and first area to this feature size value
The feature dimension of domain semiconductor-on-insulator device only needs one-shot measurement just can obtain first area and second area upper half simultaneously
The feature dimension of conductor device needs to measure the spy of first area, second area semiconductor-on-insulator device respectively with the prior art
For levying size value, measurement process is simple and time-consuming few.
Hereafter the other for based on above-mentioned measurement method, continuing to introduce measurement method provided by the invention is implemented
Example.Measurement method may include:
S201, feeler switch is set on the first area of panel to be tested.
S202, first area and second area are detected based on feeler switch, obtains first area semiconductor-on-insulator device
Feature dimension and second area semiconductor-on-insulator device feature dimension to be modified.
It is to be appreciated that the explanation of relative words can refer to explaining in an embodiment in the embodiment
It is bright, it repeats no more hereinafter.
Under some examples, when first area is the effective display area on panel to be tested, second area is to be tested
Binding area on panel；When first area is the binding area on panel to be tested, second area is having on panel to be tested
Imitate viewing area.
Offset value between S103, acquisition first area and second area.
Difference in height between offset value, as first area and second area.
Step S103 acquires the offset value between first area and second area, can be accomplished by the following way:
One such mode is, by detecting first area, the second area difference in height between reference plane respectively,
Difference in height between difference in height and second area and reference plane between first area and reference plane is subtracted each other, obtains first
Offset value between region and second area.
It is to be understood that reference plane is another plane different from plane where first area, second area.?
Under some examples, reference plane can be the glass substrate on panel to be tested.
Other mode can be, using first area as reference plane, detect second area relative to first area
Highly, by height as the offset value between first area and second area.Either, using second area as reference plane, inspection
The height relative to second area for surveying first area, by height as the offset value between first area and second area.
S104, using offset value, inquire the offset value and amendment deviation to be selected of preset first area and second area
Mapping relations, by amendment deviation to be selected corresponding with offset value be determined as correct deviation.
The offset value of first area and second area has corresponding mapping relations with amendment deviation to be selected, such as offset value
When respectively 2,1,0, -1, -2, corresponding amendment deviation to be selected can be 0.2,0.1,0, -0.1, -0.2.
The mapping between offset value and amendment deviation to be selected can be inquired based on the offset value got in step S102
Relationship determines amendment deviation from amendment deviation to be selected.
S105, using amendment deviation and binding area to be modified feature dimension, calculated according to default operational formula,
Using calculated result as binding area's feature dimension.
Under other example, default budget formula can be inclined for binding area to be modified feature dimension is subtracted amendment
Difference, or by binding area's feature dimension to be modified plus amendment deviation, be also possible to binding area to be modified is special
Sign size value is multiplied with amendment deviation.
The present invention also provides a kind of measuring devices, refer to Fig. 3, which includes processor 301, memory
302 and communication bus 303；
Communication bus 303 is for realizing the connection communication between processor 301 and memory 302；
Processor 301 is for executing one or more program stored in memory 302, to realize as above each implementation
The step of measurement method for the feature sizes of semiconductor devices that example provides.
The above is only the embodiment of the present invention, are not intended to limit the scope of the invention, all to be said using the present invention
The mutual knot of technical characteristic between equivalent structure or equivalent flow shift made by bright book and accompanying drawing content, such as each embodiment
It closes, is applied directly or indirectly in other relevant technical fields, and is included within the scope of the present invention.
Claims (10)
1. a kind of measurement method of feature sizes of semiconductor devices, which is characterized in that the method is for measuring panel to be tested
The feature dimension of the semiconductor devices of upper first area and second area area, which comprises
The first area and the second area are detected based on the feeler switch, obtain first area semiconductor-on-insulator device
The feature dimension of part and the feature dimension to be modified of second area semiconductor-on-insulator device, the feeler switch are arranged in institute
On the first area for stating panel to be tested；
Based on the offset relationship of first area and second area on the panel to be tested, amendment deviation is determined；
The feature dimension to be modified is modified using the amendment deviation, using correction result as secondth area
The feature dimension of domain semiconductor-on-insulator device.
2. the method according to claim 1, wherein when the first area is having on the panel to be tested
When imitating viewing area, the second area is the binding area on the panel to be tested；
When the first area is the binding area on the panel to be tested, the second area is on the panel to be tested
Effective display area.
3. method according to claim 1 or 2, which is characterized in that described to utilize the amendment deviation to described to be repaired
Positive binding area's feature dimension is modified, and obtains binding area's feature dimension, comprising:
Using the amendment deviation and the binding area to be modified feature dimension, calculated according to default operational formula,
Using calculated result as binding area's feature dimension.
4. according to the method described in claim 3, it is characterized in that, described to be modified tied up using the amendment deviation to described
Determine area's feature dimension to be modified, obtain binding area's feature dimension, comprising:
The amendment deviation is added with the binding area to be modified feature dimension, obtains binding area's feature dimension.
5. according to the method described in claim 3, it is characterized in that, described to be modified tied up using the amendment deviation to described
Determine area's feature dimension to be modified, obtain binding area's feature dimension, comprising:
The amendment deviation and the binding area to be modified feature dimension are subtracted each other, binding area's feature dimension is obtained.
6. according to the method described in claim 3, it is characterized in that, described to be modified tied up using the amendment deviation to described
Determine area's feature dimension to be modified, obtain binding area's feature dimension, comprising:
The amendment deviation is multiplied with the binding area to be modified feature dimension, obtains binding area's feature dimension.
7. method according to claim 1 or 2, which is characterized in that described based on first area on the panel to be tested
With the offset relationship of second area, amendment deviation is determined, comprising:
Obtain the offset value between first area and second area；
Using the offset value, the mapping of the offset value and amendment deviation to be selected of preset first area and second area is inquired
The amendment deviation to be selected corresponding with the offset value is determined as correcting deviation by relationship.
8. the method according to the description of claim 7 is characterized in that the offset obtained between first area and second area
Value, comprising:
First area, the second area difference in height between reference plane respectively are detected, by the first area and the reference
Difference in height between second area described in difference in height between plane and the reference plane is subtracted each other, and first area and second are obtained
Offset value between region.
9. the method according to the description of claim 7 is characterized in that the offset obtained between first area and second area
Value, comprising:
Using first area as reference plane, the height relative to the first area of second area is detected, the height is made
Offset value between the first area and second area；
Alternatively,
Using second area as reference plane, the height relative to the second area of first area is detected, the height is made
Offset value between the first area and second area.
10. a kind of measuring device, which is characterized in that the measuring device includes processor, memory and communication bus；
The communication bus is for realizing the connection communication between processor and memory；
The processor is for executing one or more program stored in memory, to realize as appointed in claim 1 to 9
The step of measurement method of feature sizes of semiconductor devices described in one.
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| CN201910363090.3A CN110137354B (en) | 2019-04-30 | 2019-04-30 | Method and apparatus for measuring characteristic dimension of semiconductor device |
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| CN201910363090.3A CN110137354B (en) | 2019-04-30 | 2019-04-30 | Method and apparatus for measuring characteristic dimension of semiconductor device |
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| TW498425B (en) * | 2001-08-08 | 2002-08-11 | Taiwan Semiconductor Mfg | Method for measuring horizontal slant of image field |
| JP2002333701A (en) * | 2001-05-07 | 2002-11-22 | Nec Corp | Method for correcting mask data, program, proximity effect correction mask |
| JP2009139906A (en) * | 2007-11-13 | 2009-06-25 | Mitsubishi Electric Corp | Semiconductor device and dimension measurement method for the same |
| US20130146763A1 (en) * | 2010-05-27 | 2013-06-13 | Hitachi High-Technologies Corporation | Image Processing Device, Charged Particle Beam Device, Charged Particle Beam Device Adjustment Sample, and Manufacturing Method Thereof |
-
2019
- 2019-04-30 CN CN201910363090.3A patent/CN110137354B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002333701A (en) * | 2001-05-07 | 2002-11-22 | Nec Corp | Method for correcting mask data, program, proximity effect correction mask |
| TW498425B (en) * | 2001-08-08 | 2002-08-11 | Taiwan Semiconductor Mfg | Method for measuring horizontal slant of image field |
| JP2009139906A (en) * | 2007-11-13 | 2009-06-25 | Mitsubishi Electric Corp | Semiconductor device and dimension measurement method for the same |
| US20130146763A1 (en) * | 2010-05-27 | 2013-06-13 | Hitachi High-Technologies Corporation | Image Processing Device, Charged Particle Beam Device, Charged Particle Beam Device Adjustment Sample, and Manufacturing Method Thereof |
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