CN110137094B - Die bonding method of SiC chip - Google Patents
Die bonding method of SiC chip Download PDFInfo
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- CN110137094B CN110137094B CN201910411326.6A CN201910411326A CN110137094B CN 110137094 B CN110137094 B CN 110137094B CN 201910411326 A CN201910411326 A CN 201910411326A CN 110137094 B CN110137094 B CN 110137094B
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- sic chip
- electroplating
- dbc plate
- dbc
- die bonding
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
Abstract
The invention relates to a die bonding method of a SiC chip, which belongs to the technical field of power semiconductor packaging and comprises the specific steps that A, a copper layer at the position where the SiC chip is pasted on a DBC plate is designed to be in a stripe shape, and the length of the stripe-shaped copper layer is greater than that of the SiC chip; B. cleaning the DBC surface by using an ultrasonic cleaning machine; C. protecting the part of the surface of the DBC plate, which does not need to be electroplated, by using an insulating material, and putting the DBC plate and the SiC chip into an electroplating bath for electroplating, wherein the electroplating solution is sulfamate nickel plating solution; D. cleaning and drying the electroplated DBC board and the electroplated SiC chip; the method realizes the die bonding of the SiC chip 2 through electroplating the nickel layer 6, has good shearing force and low thermal resistance, and has the advantages of low cost and low reaction temperature compared with the method of nano-silver soldering paste.
Description
Technical Field
The invention belongs to the technical field of power semiconductor packaging, and particularly relates to a die bonding method for a SiC chip.
Background
The wide and tight band semiconductor has excellent performance under the condition of high power, can bear junction temperature of more than 300 ℃, and has wide application prospect in the field of power electronics. However, the operating temperature of the conventional tin-silver solder paste or tin-copper solder paste is limited to about 270 ℃, and therefore, a soldering material with a high melting point needs to be developed for the third generation semiconductor technology such as the packaging of SiC chips.
The nano silver sintering technology has low welding temperature, can bear the working temperature of 700 ℃ and has excellent electrical connection performance and heat dissipation capacity, but the nano silver soldering paste is expensive, and has low thermal life under the high-temperature working environment, so a new die bonding method needs to be found.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a die bonding method of a SiC chip, which has the advantages of low price and good thermal conductivity.
The technical scheme adopted by the invention is as follows:
the key point of the crystal fixing method of the SiC chip is that the crystal fixing method comprises the following specific steps,
A. designing a copper layer at the position where the SiC chip is pasted on the DBC plate into a stripe shape;
B. cleaning the DBC surface by using an ultrasonic cleaning machine;
C. protecting the part of the surface of the DBC plate, which does not need to be electroplated, by using an insulating material, and putting the DBC plate and the SiC chip into an electroplating bath for electroplating;
D. and cleaning and drying the electroplated DBC plate and the electroplated SiC chip.
And in the step A, the length of the strip-shaped copper layer is greater than that of the SiC chip.
The current density of electroplating in the step C is 3-32A/dm2。
And C, electroplating by using a sulfamate nickel plating solution as an electroplating solution, wherein the sulfamate nickel plating solution comprises 70-80g/L of Ni2+Nickel chloride with the mass concentration of 26-35g/L, boric acid and an additive.
The pH value of the sulfamate nickel plating solution is 3.2-3.8, and the temperature is 45-55 ℃.
And D, cleaning the DBC plate and the SiC chip by adopting heated deionized water.
The invention has the beneficial effects that: the copper layer at the position where the SiC chip is pasted on the DBC plate is designed to be in a stripe shape, so that an electroplating material is filled between the stripes in the electroplating process, and the SiC chip is solidified.
Drawings
Fig. 1 is a schematic structural view of a DBC panel.
Fig. 2 is a schematic view of an electroplating process.
Fig. 3 is a cross-sectional view of the SiC chip and the DBC plate after plating.
FIG. 4 is a graph comparing shear strength of temperature cycling tests of the present invention and the prior art.
In the attached drawings, 1 is a DBC plate, 2 is a SiC chip, 3 is a copper layer, 4 is an electroplating bath, 5 is a ceramic part, 6 is a nickel layer.
Detailed Description
The invention relates to a crystal fixing method of a SiC chip, wherein a DBC plate and the SiC chip are bonded together and placed in an electroplating solution, and the SiC chip and the DBC plate are fixed together in an electroplating mode.
The invention is further described with reference to the following figures and specific embodiments.
Example 1, as shown in fig. 1 to 3, a method for die bonding a SiC chip, the method comprising the steps of,
A. design of the DBC panel 1: the copper layer 3 at the position where the SiC chip 2 is pasted on the DBC plate 1 is designed to be stripe-shaped, the length of the copper layer is slightly larger than that of the SiC chip 2, and compared with the plane design of the copper layer in the prior art, the stripe-shaped and the length of the copper layer slightly larger than that of the SiC chip 2 are beneficial to filling of electroplating materials;
B. the cleaning process comprises the following steps: cleaning the surface of the DBC plate 1 by using an ultrasonic cleaning machine to remove pollutants on the surface;
C. the electroplating process comprises the following steps: protecting the part of the surface of the DBC plate 1 which does not need to be electroplated by using an insulating material, putting the DBC plate 1 and the SiC chip 2 into a plating tank 4, connecting the DBC plate 1 which needs to be electroplated with a cathode, and setting the current to be 2A/dm2The current density is proportional to the deposition speed, but the current density is more than 30A/dm2The hardness of the plating layer is reduced, the porosity is increased, and pinhole defects appear on the surface. The current density is less than 3A/dm2The deposition speed is slow, the production efficiency is influenced, and the current is 3-30A/dm2The production efficiency is ensured, and the coating is dense in quality, high in hardness and good in electroplating effect; the plating solution in the plating bath 4 is a sulfamate nickel plating solution, and Ni is generally controlled2+The mass concentration of the nickel chloride is controlled to be 75g/L, the mass concentration of the nickel chloride is controlled to be 30g/L, other main components are boric acid and additives, the content of nickel salt is high,the high-speed thick nickel plating solution can be used, the deposition speed is high, the high-speed thick nickel plating solution is commonly used, the cathode polarization is reduced due to the high concentration, the dispersion capacity is poor, the carrying-out loss of the plating solution is large, and a fine and bright crystalline plating layer is not easy to obtain. The function of the additive is mainly to relieve the stress in the coating. When in electroplating work, the pH value is controlled to be about 3.5, and the temperature is set to be 50 ℃; the practical result shows that the pH value of the nickel plating electrolyte has great influence on the performance of the plating layer and the performance of the electrolyte, and no metallic nickel is deposited in the strong acid electroplating solution with too low pH value. However, when the pH value is too large, nickel hydroxide colloid is generated, hydrogen bubbles are generated, the hydrogen bubbles are retained, the plating layer has pinholes, nickel hydroxide is mixed in the plating layer, the brittleness of the plating layer is increased, the selection of the pH value in the application is just the deposition of nickel, and the strength of the plating layer is good. The surface roughness of the nickel-plated layer shows a gradual increase tendency along with the temperature rise of the plating solution, if the temperature is too high, the nickel salt will be hydrolyzed, the generated nickel hydroxide colloid causes the colloid hydrogen bubbles to be retained, the plating layer generates pinholes, in addition, the too high temperature can cause the water in the plating solution to evaporate faster, which is not beneficial to keeping the components of the plating solution stable, so the temperature is set to be 45-55 ℃, and the temperature is preferably 50 ℃ in the embodiment.
D. And cleaning the electroplated DBC plate 1 and the electroplated SiC chip 2 by using heated deionized water, and drying.
The base of the DBC plate is a ceramic part 5, and the ceramic has excellent performances of high heat conduction, high electrical insulation, high mechanical strength and low expansion.
Embodiment 2, a method for die bonding a SiC chip, the method comprising the steps of,
A. design of the DBC panel 1: designing a copper layer 3 at the position where the SiC chip 2 is pasted on the DBC plate 1 into a stripe shape, wherein the length of the copper layer is slightly larger than that of the SiC chip 2;
B. the cleaning process comprises the following steps: cleaning the surface of the DBC plate 1 by using an ultrasonic cleaning machine to remove pollutants on the surface;
C. electroplating process: protecting the part of the surface of the DBC plate 1 which does not need to be electroplated by using an insulating material, putting the DBC plate 1 and the SiC chip 2 into a plating tank 4, connecting the DBC plate 1 which needs to be electroplated with a cathode, and setting the current to be 16A/dm2(ii) a The plating solution in the plating bath 4 is a sulfamate nickel plating solution, and Ni is generally controlled2+The mass concentration of the nickel chloride is controlled to be 75g/L, the mass concentration of the nickel chloride is controlled to be 30g/L, other main components are boric acid and additives, the pH value can be controlled and the stress can be eliminated, the pH value is controlled to be about 3.5 during electroplating work, and the temperature is set to be 50 ℃;
D. and cleaning the electroplated DBC plate 1 and the electroplated SiC chip 2 by using heated deionized water, and drying.
A. design of the DBC panel 1: designing a copper layer 3 at the position where the SiC chip 2 is pasted on the DBC plate 1 into a stripe shape, wherein the length of the copper layer is slightly larger than that of the SiC chip 2;
B. the cleaning process comprises the following steps: cleaning the surface of the DBC plate 1 by using an ultrasonic cleaning machine to remove pollutants on the surface;
C. the electroplating process comprises the following steps: protecting the part of the surface of the DBC plate 1 which does not need to be electroplated by using an insulating material, putting the DBC plate 1 and the SiC chip 2 into a plating tank 4, connecting the DBC plate 1 which needs to be electroplated with a cathode, and setting the current to be 32A/dm2(ii) a The plating solution in the plating bath 4 is a sulfamate nickel plating solution, and Ni is generally controlled2+The mass concentration of the nickel chloride is controlled to be 75g/L, the mass concentration of the nickel chloride is controlled to be 30g/L, other main components are boric acid and additives, the pH value can be controlled and the stress can be eliminated, the pH value is controlled to be about 3.5 during electroplating work, and the temperature is set to be 50 ℃;
D. and cleaning the electroplated DBC plate 1 and the electroplated SiC chip 2 by using heated deionized water, and drying.
As shown in FIG. 4, the product obtained by the die bonding method of the present invention and the product sintered by the existing nano silver are subjected to temperature cycle tests, the shear strength of the chip is measured at 0h, 250h, 750h and 1000h, and the comparison shows that after 1000h, the shear strength of the nano silver is reduced to 20MPa, while the strength of the present solution is maintained at 25 MPa.
The invention provides a novel die bonding method, wherein an electroplating solution in the die bonding method adopts a sulfamate nickel plating solution, a gap between a SiC chip 2 and a DBC plate 1 is filled with a nickel layer 6, the generated nickel layer 6 has the characteristics of low tensile stress, stable thickness and the like, and through a shearing force test and a thermal resistance test, die bonding of the SiC chip 2 through the electroplated nickel layer 6 can be found, and the die bonding method has the advantages of good shearing force, low thermal resistance and low cost and reaction temperature compared with a nano silver soldering paste method.
Claims (4)
1. A crystal fixing method of a SiC chip is characterized by comprising the following steps: the specific steps of the die bonding method are,
A. designing a copper layer (3) at the position where the SiC chip (2) is attached on the DBC plate (1) into a stripe shape, wherein the length of the stripe-shaped copper layer (3) is greater than that of the SiC chip (2);
B. cleaning the surface of the DBC plate (1) by using an ultrasonic cleaning machine;
C. protecting the part of the surface of the DBC plate (1) which does not need to be electroplated by using an insulating material, and putting the DBC plate (1) and the SiC chip (2) into a plating tank (4) for electroplating, wherein the current density of electroplating is 3-30A/dm 2;
D. and cleaning and drying the electroplated DBC plate (1) and the SiC chip (2).
2. The die bonding method of the SiC chip according to claim 1, wherein: and C, electroplating by using a sulfamate nickel plating solution as an electroplating solution, wherein the sulfamate nickel plating solution comprises 70-80g/L of Ni2+Nickel chloride with the mass concentration of 26-35g/L, boric acid and an additive.
3. The die bonding method of the SiC chip according to claim 2, wherein: the pH value of the sulfamate nickel plating solution is 3.2-3.8, and the temperature is 45-55 ℃.
4. The die bonding method of the SiC chip according to claim 1, wherein: and D, cleaning the DBC plate (1) and the SiC chip (2) by adopting heated deionized water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201910411326.6A CN110137094B (en) | 2019-05-17 | 2019-05-17 | Die bonding method of SiC chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201910411326.6A CN110137094B (en) | 2019-05-17 | 2019-05-17 | Die bonding method of SiC chip |
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| CN110137094A CN110137094A (en) | 2019-08-16 |
| CN110137094B true CN110137094B (en) | 2021-04-20 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH01206587A (en) * | 1988-02-12 | 1989-08-18 | Fujitsu Ltd | Method for mounting chip type parts |
| JPH0864938A (en) * | 1994-08-25 | 1996-03-08 | Sharp Corp | Connection method of chip electronic component |
| EP1724823A3 (en) * | 2005-05-11 | 2009-09-09 | Stmicroelectronics Sa | Method of connecting a semiconductor chip on an interconnection carrier |
| CN105118790B (en) * | 2015-07-23 | 2017-12-29 | 淄博美林电子有限公司 | A kind of high temperature packaging framework preparation method of silicon carbide diode |
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