CN110120795A - A kind of ellipsoid resonator of high quality factor - Google Patents
A kind of ellipsoid resonator of high quality factor Download PDFInfo
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- CN110120795A CN110120795A CN201910409244.8A CN201910409244A CN110120795A CN 110120795 A CN110120795 A CN 110120795A CN 201910409244 A CN201910409244 A CN 201910409244A CN 110120795 A CN110120795 A CN 110120795A
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- 230000011664 signaling Effects 0.000 claims abstract description 38
- 238000001514 detection method Methods 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000004020 conductor Substances 0.000 claims abstract description 15
- 239000000725 suspension Substances 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 55
- 239000012528 membrane Substances 0.000 claims description 30
- 239000000377 silicon dioxide Substances 0.000 claims description 27
- 235000012239 silicon dioxide Nutrition 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 238000005452 bending Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000010408 film Substances 0.000 claims description 5
- 230000002401 inhibitory effect Effects 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 238000006073 displacement reaction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 3
- 241000790917 Dioxys <bee> Species 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- -1 layer Chemical compound 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02433—Means for compensation or elimination of undesired effects
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
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- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses a kind of ellipsoid resonators of high quality factor, comprising: oval harmonic oscillator, piezoelectric actuator, piezoelectric detector, supporting beam, anchor point, pin, conducting wire and substrate；Supporting beam includes the first supporting beam and the second supporting beam；Conducting wire includes driving signal conducting wire, detection signal conductor, the first ground signalling conducting wire and the second ground signalling conducting wire；Anchor point includes the first anchor point and the second anchor point；Pin includes the first ground signalling pin, the second ground signalling pin, detection signal pins and driving signal pin；The oval harmonic oscillator of suspension is provided on the top surface of substrate, one end of oval harmonic oscillator long axis connects the first anchor point by the first supporting beam, and the other end of oval harmonic oscillator long axis connects the second anchor point by the second supporting beam；It solves the problems, such as to be lost as caused by supporting beam torsional deflection in conventional art.
Description
Technical field
The present invention relates to radio-frequency micro electromechanical system field, especially a kind of ellipsoid resonator of high quality factor.
Background technique
Compared to traditional resonator, MEMS resonator have high q-factor, low-power consumption, small size, can integrate, low cost etc. it is excellent
Gesture has broad application prospects in a wireless communication system.MEMS resonator can be divided mainly into two major classes type: out-of-plane vibration mould
State and in plane vibration mode.
Wherein, the dish type resonator based on out-of-plane vibration mode still has lesser movement resistance in low frequency, therefore
There is advantage in low frequency applications, the typical structure in this quasi resonant oscillator is disc.Supporting beam loss is that limitation disc is humorous
A kind of typical loss mechanism for device quality factor of shaking, it is that a kind of elastic wave by supporting beam is transmitted to substrate generation from harmonic oscillator
Energy loss.
In order to inhibit supporting beam to be lost, a kind of typical effective method is the section being placed in supporting beam in mode of oscillation
Point.Displacement and displacement gradient at node are equal to zero, thus can effectively inhibit the flexible deformation of supporting beam, and then inhibit branch
Support beam loss.In certain mode, the center of disc resonator is a desired node, but supporting beam is arranged in disk
Center needs longer conducting wire, to need biggish encapsulated space, and leads to biggish parasitic capacitance.In addition, for section
Supporting beam cannot be lost and be placed in disc centre by low frequency modal of the line less than two, because disc centre is not a node,
Which has limited the designs of low-frequency resonator.Another method for arranging of supporting beam be supporting beam is arranged in excircle, and with section
Line is conllinear, while minimizing the width of supporting beam.This supporting beam arrangement be able to suppress supporting beam dilatation and
Bending deformation, but there are still loss caused by torsional deflection in supporting beam, because rather than a kind of ideal supporting beam arrangement
Mode.Based on this, there is an urgent need to optimize resonator structure, supporting beam loss is reduced.
Summary of the invention
To solve problems of the prior art, the present invention provides a kind of ellipsoid resonator of high quality factor,
It solves the problems, such as to be lost as caused by supporting beam torsional deflection in conventional art.
The technical solution adopted by the present invention is that a kind of ellipsoid resonator of high quality factor, comprising: oval harmonic oscillator,
Piezoelectric actuator, piezoelectric detector, supporting beam, anchor point, pin, conducting wire and substrate；Supporting beam includes the first supporting beam and second
Supporting beam；Conducting wire includes driving signal conducting wire, detection signal conductor, the first ground signalling conducting wire and the second ground signalling conducting wire；
Anchor point includes the first anchor point and the second anchor point；Pin includes the first ground signalling pin, the second ground signalling pin, detection signal
Pin and driving signal pin；
The oval harmonic oscillator of suspension is provided on the top surface of substrate, one end of oval harmonic oscillator long axis passes through the first supporting beam
The first anchor point is connected, the other end of oval harmonic oscillator long axis connects the second anchor point by the second supporting beam；First anchor point is set to
On the top surface of substrate, the first insulating oxide is provided between the first anchor point and substrate；Second anchor point is set to the top surface of substrate
On, the second insulating oxide is provided between the second anchor point and substrate；Be provided on first anchor point top surface driving signal pin and
First ground signalling pin is provided with detection signal pins and the second ground signalling pin on the second anchor point top surface；
Piezoelectric actuator and piezoelectric detector are set in oval harmonic oscillator；Piezoelectric actuator is successively exhausted by the first silica
Edge layer, the first grounding electrode, the first PZT piezoelectric membrane and driving electrodes stack；
Piezoelectric detector is successively by the second silicon dioxide insulating layer, the second grounding electrode, the 2nd PZT piezoelectric membrane and detection
Electrode stack forms；
Piezoelectric actuator is as the planar graph of piezoelectric detector and is ellipse.
Preferably, paving is disposed with the first silicon dioxide insulating layer, first between driving signal pin and the first anchor point
Ground metal layer and the first PZT piezoelectric membrane；
The second silicon dioxide insulating layer, the second ground metal layer and the are successively equipped between detection signal pins and anchor point
Two PZT piezoelectric membranes.
Preferably, the first ground metal layer, the second ground metal layer, the first PZT piezoelectric membrane, second and PZT piezoelectricity is thin
Film is for guaranteeing that driving signal pin makes simultaneously with driving electrodes, detection signal pins and detecting electrode, to avoid additional
The use of production process.
Preferably, the first silicon dioxide insulating layer is laid between the first ground signalling pin and the first anchor point；Second ground connection
The second silicon dioxide insulating layer is laid between signal pins and the second anchor point.
Preferably, driving electrodes are connect by driving signal conducting wire with driving signal pin, and detecting electrode passes through detection letter
Number conducting wire connect with detection signal pins, and the first grounding electrode of driver passes through the first ground signalling conducting wire and the first grounding lead
Second grounding electrode of foot connection, detector is connect by the second ground signalling conducting wire with the second grounding pin.
Preferably, the first PZT piezoelectric membrane, detection letter are equipped between driving signal conducting wire and the first ground signalling conducting wire
The 2nd PZT piezoelectric membrane, the first PZT piezoelectric membrane and the 2nd PZT pressure number are equipped between conducting wire and the second ground signalling conducting wire
Conductive film guarantees that driving signal conducting wire is made simultaneously with driving electrodes, detection signal conductor and detecting electrode for being electrically insulated
Make, for avoiding additional production process；
The first silicon dioxide insulating layer, the first silicon dioxide insulator are equipped between driving signal conducting wire and the first supporting beam
Layer is for being electrically insulated；
The second silicon dioxide insulating layer, the second silicon dioxide insulator are equipped between detection signal conductor and the second supporting beam
Layer is for being electrically insulated.
Preferably, the operation mode of ellipsoid resonator is B (1,1) mode, and B (1,1) mode includes a nodel line and one
A pitch circle, nodel line are located on transverse, and two intersection points of pitch circle and nodel line are the node of B (1,1) mode, in two nodes
Place, the vibration morpheme of mode is moved equal to zero and morpheme of shaking moves and is equal to zero about the gradient of 3 space coordinates；By optimizing oval resonance
The long axis of device and the ratio of short axle make two nodes be adjusted to long axis both ends, therefore supporting beam are made to be connected with node, to rise
To dilatation, bending deformation and the function of torsional deflection for inhibiting supporting beam, it is finally reached the purpose for inhibiting supporting beam loss,
Realize the resonator of high quality factor.
The ellipsoid resonator of high quality factor of the present invention has the beneficial effect that:
The present invention is designed by ellipsoid resonator, and two nodes of B (1,1) mode of resonator are adjusted to long axis two
End to achieve the purpose that the dilatation, bending deformation and the torsional deflection that inhibit supporting beam, and then inhibits supporting beam loss,
Realize the resonator of high quality factor.
Detailed description of the invention
Fig. 1 is the overall structure figure of the ellipsoid resonator of the ellipsoid resonator of high quality factor of the present invention.
Fig. 2 is the top view of the ellipsoid resonator of the ellipsoid resonator of high quality factor of the present invention.
Fig. 3 is the Section A-A figure of the ellipsoid resonator of the ellipsoid resonator of high quality factor of the present invention.
Fig. 4 is the section B-B figure of the ellipsoid resonator of the ellipsoid resonator of high quality factor of the present invention
Fig. 5 is the C-C sectional view of the ellipsoid resonator of the ellipsoid resonator of high quality factor of the present invention
Fig. 6 is the D-D sectional view of the ellipsoid resonator of the ellipsoid resonator of high quality factor of the present invention
Fig. 7 is the E-E sectional view of the ellipsoid resonator of the ellipsoid resonator of high quality factor of the present invention
Fig. 8 is the mode axis side direction figure of the ellipsoid resonator of the ellipsoid resonator of high quality factor of the present invention.
Fig. 9 is the mode overlook direction figure of the ellipsoid resonator of the ellipsoid resonator of high quality factor of the present invention.
Figure 10 is the geometric dimension figure of the oval resonator of the ellipsoid resonator of high quality factor of the present invention.
Figure 11 is that the supporting beam deformation of the ellipsoid resonator of high quality factor of the present invention can be with the variation diagram of minor axis length.
Specific embodiment
A specific embodiment of the invention is described below, in order to facilitate understanding by those skilled in the art this hair
It is bright, it should be apparent that the present invention is not limited to the ranges of specific embodiment, for those skilled in the art,
As long as various change is in the spirit and scope of the present invention that the attached claims limit and determine, these variations are aobvious and easy
See, all are using the innovation and creation of present inventive concept in the column of protection.
As shown in Figures 1 to 7, a kind of ellipsoid resonator of high quality factor, comprising: oval harmonic oscillator 1, Piezoelectric Driving
Device, piezoelectric detector, supporting beam, anchor point, pin, conducting wire and substrate 11；Supporting beam includes the support of the first supporting beam 4-1 and second
Beam 4-2；Conducting wire includes driving signal conducting wire 9, detection signal conductor 10, the first ground signalling conducting wire 16-1 and the second ground signalling
Conducting wire 16-2；Anchor point includes the first anchor point 8-1 and the second anchor point 8-2；Pin connects including the first ground signalling pin 5-1, second
Earth signal pin 5-2, detection signal pins 7 and driving signal pin 6；
The oval harmonic oscillator 1 of suspension is provided on the top surface of substrate 11, one end of oval 1 long axis of harmonic oscillator passes through first
The first anchor point of beam 4-1 connection 8-1 is supportted, the other end of oval 1 long axis of harmonic oscillator passes through second supporting beam 4-2 the second anchor point of connection 8-
2；First anchor point 8-1 is set on the top surface of substrate 11, is provided with the first insulating oxide between the first anchor point 8-1 and substrate 11
22-1；Second anchor point 8-2 is set on the top surface of substrate 11, and the second insulation oxygen is provided between the second anchor point 8-2 and substrate 11
Change layer 22-2；Driving signal pin 6 and the first ground signalling pin 5-1, the second anchor point 8- are provided on first top surface anchor point 8-1
Detection signal pins 7 and the second ground signalling pin 5-2 are provided on 2 top surfaces；
Piezoelectric actuator and piezoelectric detector are set in oval harmonic oscillator 1；Piezoelectric actuator is successively by the first silica
Insulating layer 14-1, the first grounding electrode 13-1, the first PZT piezoelectric membrane 12-1 and driving electrodes 2 stack；
Piezoelectric detector is successively thin by the second silicon dioxide insulating layer 14-2, the second grounding electrode 13-2, the 2nd PZT piezoelectricity
Film 12-2 and detecting electrode 3 stack；
Piezoelectric actuator is as the planar graph of piezoelectric detector and is ellipse.
It is exhausted to be disposed with the first silica for paving between the driving signal pin 6 of the present embodiment and the first anchor point 8-1
Edge layer 21-1, the first ground metal layer 20-1 and the first PZT piezoelectric membrane 19-1；
The second silicon dioxide insulating layer 21-2, the second ground connection gold are successively equipped between detection signal pins 7 and anchor point 8-2
Belong to layer 20-2 and the 2nd PZT piezoelectric membrane 19-2.
The first ground metal layer 20-1, the second ground metal layer 20-2, the first PZT piezoelectric membrane 19- of the present embodiment
1, second and PZT piezoelectric membrane 19-2 for guaranteeing driving signal pin 6 and driving electrodes 2, detection signal pins 7 and detection electricity
Pole 3 makes simultaneously, to avoid the use of additional production process.
The first silicon dioxide insulator is laid between the first ground signalling pin 5-1 and the first anchor point 8-1 of the present embodiment
Layer 18-1；
The second silicon dioxide insulating layer 18-2 is laid between second ground signalling pin 5-2 and the second anchor point 8-2.
The driving electrodes 2 of the present embodiment are connect by driving signal conducting wire 9 with driving signal pin 6, and detecting electrode 3 is logical
It crosses detection signal conductor 10 to connect with detection signal pins 7, the first grounding electrode 13-1 of driver passes through the first ground signalling
Conducting wire 16-1 is connect with the first grounding pin 5-1, and the second grounding electrode 13-2 of detector passes through the second ground signalling conducting wire 16-
2 connect with the second grounding pin 5-2.
The first PZT piezoelectricity is equipped between the driving signal conducting wire 9 of the present embodiment and the first ground signalling conducting wire 16-1
Film 15-1 is detected and is equipped with the 2nd PZT piezoelectric membrane 15-2 between signal conductor 10 and the second ground signalling conducting wire 16-2, the
One PZT piezoelectric membrane 15-1 and the 2nd PZT piezoelectric membrane 15-2 guarantees driving signal conducting wire 9 and driving for being electrically insulated
Electrode 2, detection signal conductor 10 make simultaneously with detecting electrode 3, for avoiding additional production process；
The first silicon dioxide insulating layer 17-1, the first dioxy are equipped between driving signal conducting wire 9 and the first supporting beam 4-1
SiClx insulating layer 17-1 is for being electrically insulated；
The second silicon dioxide insulating layer 17-2, the second dioxy are equipped between detection signal conductor 9 and the second supporting beam 4-2
SiClx insulating layer 17-2 is for being electrically insulated.
The operation mode of the ellipsoid resonator of the present embodiment is B (1,1) mode, and B (1,1) mode includes a nodel line
With a pitch circle, nodel line is located on transverse, and two intersection points of pitch circle and nodel line are the node of B (1,1) mode, saves at two
At point, the vibration morpheme of mode is moved equal to zero and morpheme of shaking moves and is equal to zero about the gradient of 3 space coordinates；It is oval humorous by optimization
Shake the long axis of device and the ratio of short axle, so that two nodes is adjusted to long axis both ends, therefore supporting beam is connected with node, to rise
To dilatation, bending deformation and the function of torsional deflection of inhibition supporting beam, and then achieve the purpose that inhibit supporting beam loss,
Realize the resonator of high quality factor.
When implementing, AC drive voltage signal is introduced the present embodiment by driving signal pin and driving signal conducting wire
Onto driving electrodes.Drive voltage signal is formed in the polarization direction (perpendicular to the normal direction of film surface) of PZT piezoelectric membrane and is handed over
Changed electric field, due to the inverse piezoelectric effect of PZT piezoelectric membrane, alternating electric field causes the deformation of PZT piezoelectric membrane, so as to cause PZT
The alternation of piezoelectric membrane planar is flexible, and alternation stretches generates alternation moment of flexure in oval harmonic oscillator, and the driving of alternation moment of flexure is ellipse
Circle harmonic oscillator is with B (1,1) mode periodic vibration.
The periodic vibration of oval harmonic oscillator causes to deform in the PZT piezoelectric membrane of detector, due to PZT piezoelectric membrane
Direct piezoelectric effect, deformation cause the charge collection on detecting electrode, and charge after testing draw by signal conductor and detection signal pins
Out into external circuit, so that output current signal is formed, the vibration frequency of the frequency of output current signal and oval harmonic oscillator
Identical, the amplitude proportional of output current signal is in the Oscillation Amplitude of oval harmonic oscillator.
B (1,1) mode includes a nodel line and a pitch circle, and nodel line is located on transverse, and two of pitch circle and nodel line
Intersection point is known as the node of B (1,1) mode.The present invention is by the long axis of optimization oval plate and the ratio of short axle, by two node tune
Section is to long axis both ends, so that supporting beam be made to be connected with node, there are two key properties for two node tools: the mode vibration shape at node
Displacement is equal to zero；Mode vibration morpheme at node, which is moved, is equal to zero about the gradient of 3 space coordinates.Two key properties of node
Dilatation, bending deformation and the function of torsional deflection for inhibiting supporting beam are played, to reach the mesh for inhibiting supporting beam loss
, realize the resonator of high quality factor.
For example, as shown in Figure 10, the harmonic oscillator thickness h of oval resonator1=35 μm, piezoelectric actuator and detector it is total
Thickness h2=2.7 μm, a=700 μm of long axis length, minor axis length b=[700 μm, 650 μm, 600 μm, 550 μm, 500 μm, 450 μ
M, 400 μm, 350 μm], support c=10 μm of beam width, d=100 μm of length.
The present invention can assess influence of the supporting beam loss to quality factor, specific method by calculating the deformation of supporting beam
Are as follows: variable is set by the minor axis length b of oval resonator, and value [700 μm, 650 μm, 600 μm, 550 μm, 500 μm, 450 μ
m,400μm,350μm]；Since the overall thickness of piezoelectric actuator and detector is much smaller than harmonic oscillator thickness, finite element model
Ignore the influence of piezoelectric actuator and detector to mode；It is humorous that the corresponding ellipse of different minor axis lengths is obtained by finite element simulation
B (1,1) mode of vibration device, and (maximum value of mode displacement is equal to 1m) by Mode Shape function normalization；Calculate two supports
The deformation energy summation that beam includes.
Supporting beam deformation can be inversely proportional to quality factor, i.e. supporting beam deformation can be smaller, then the quality factor of oval resonator
Bigger, the corresponding supporting beam deformation of different minor axis lengths can be as shown in figure 11.It is in Figure 11 statistics indicate that: when minor axis length is
700 μm, supporting beam deformation can be equal to 41.1J, i.e. the supporting beam deformation of circular resonator can be equal to 41.1J；Minor axis length is equal to
The supporting beam deformation of 350 μm of oval resonator can be equal to 0.125J, be the 0.3% of the supporting beam deformation energy of circular resonator；
In other words, the quality factor of oval resonator of the minor axis length equal to 350 μm are 329 times of the quality factor of circular resonator.
Based on this it is found that ellipse resonator structure proposed by the present invention effectively can inhibit supporting beam to be lost, to significantly improve resonance
The quality factor of device.
Claims (7)
1. a kind of ellipsoid resonator of high quality factor characterized by comprising oval harmonic oscillator (1), piezoelectric actuator,
Piezoelectric detector, supporting beam, anchor point, pin, conducting wire and substrate (11)；The supporting beam includes the first supporting beam (4-1) and the
Two supporting beams (4-2)；The conducting wire includes driving signal conducting wire (9), detection signal conductor (10), the first ground signalling conducting wire
(16-1) and the second ground signalling conducting wire (16-2)；The anchor point includes the first anchor point (8-1) and the second anchor point (8-2)；It is described
Pin includes the first ground signalling pin (5-1), the second ground signalling pin (5-2), detection signal pins (7) and driving signal
Pin (6)；
The oval harmonic oscillator (1) of suspension, one end of described ellipse harmonic oscillator (1) long axis are provided on the top surface of the substrate (11)
The first anchor point (8-1) is connected by the first supporting beam (4-1), the other end of described ellipse harmonic oscillator (1) long axis passes through second
Support beam (4-2) connection the second anchor point (8-2)；First anchor point (8-1) is set on the top surface of substrate (11), first anchor
The first insulating oxide (22-1) is provided between point (8-1) and substrate (11)；Second anchor point (8-2) is set to substrate
(11) on top surface, the second insulating oxide (22-2) is provided between second anchor point (8-2) and substrate (11)；Described
Driving signal pin (6) and the first ground signalling pin (5-1), the second anchor point (8- are provided on the top surface one anchor point (8-1)
2) detection signal pins (7) and the second ground signalling pin (5-2) are provided on top surface；
Piezoelectric actuator and piezoelectric detector are set on the ellipse harmonic oscillator (1)；The piezoelectric actuator is successively by the one or two
Insulating layer of silicon oxide (14-1), the first grounding electrode (13-1), the first PZT piezoelectric membrane (12-1) and driving electrodes (2) stack
It forms；
The piezoelectric detector is successively pressed by the second silicon dioxide insulating layer (14-2), the second grounding electrode (13-2), the 2nd PZT
Conductive film (12-2) and detecting electrode (3) stack；
The piezoelectric actuator is as the planar graph of piezoelectric detector and is ellipse.
2. the ellipsoid resonator of high quality factor according to claim 1, which is characterized in that the driving signal pin
(6) paving is disposed with the first silicon dioxide insulating layer (21-1), the first ground metal layer (20- between the first anchor point (8-1)
And the first PZT piezoelectric membrane (19-1) 1)；
The second silicon dioxide insulating layer (21-2), second are successively equipped between the detection signal pins (7) and anchor point (8-2)
Ground metal layer (20-2) and the 2nd PZT piezoelectric membrane (19-2).
3. the ellipsoid resonator of high quality factor according to claim 2, which is characterized in that first grounded metal
Layer (20-1), the second ground metal layer (20-2), the first PZT piezoelectric membrane (19-1), the 2nd PZT piezoelectric membrane (19-2) are used for
Guarantee that driving signal pin (6) make with driving electrodes (2), detection signal pins (7) with detecting electrode (3) simultaneously, to keep away
Exempt from the use of additional production process.
4. the ellipsoid resonator of high quality factor according to claim 1, which is characterized in that first ground signalling
The first silicon dioxide insulating layer (18-1) is equipped between pin (5-1) and the first anchor point (8-1)；
The second silicon dioxide insulating layer (18- is equipped between the second ground signalling pin (5-2) and the second anchor point (8-2)
2)。
5. the ellipsoid resonator of high quality factor according to claim 1, which is characterized in that the driving electrodes (2)
It is connect by driving signal conducting wire (9) with driving signal pin (6), the detecting electrode (3) passes through detection signal conductor (10)
It is connect with detection signal pins (7), the first grounding electrode (13-1) of the driver passes through the first ground signalling conducting wire (16-
1) it is connect with the first grounding pin (5-1), the second grounding electrode (13-2) of the detector passes through the second ground signalling conducting wire
(16-2) is connect with the second grounding pin (5-2).
6. the ellipsoid resonator of high quality factor according to claim 5, which is characterized in that the driving signal conducting wire
(9) the first PZT piezoelectric membrane (15-1), the detection signal conductor are equipped between the first ground signalling conducting wire (16-1)
(10) the 2nd PZT piezoelectric membrane (15-2) is equipped between the second ground signalling conducting wire (16-2), the first PZT piezoelectricity is thin
Film (15-1) and the 2nd PZT piezoelectric membrane (15-2) guarantee driving signal conducting wire (9) and driving electrodes for being electrically insulated
(2), detection signal conductor (10) makes simultaneously with detecting electrode (3), for avoiding additional production process；
The first silicon dioxide insulating layer (17-1), institute are equipped between the driving signal conducting wire (9) and the first supporting beam (4-1)
The first silicon dioxide insulating layer (17-1) is stated for being electrically insulated；
The second silicon dioxide insulating layer (17-2), institute are equipped between the detection signal conductor (9) and the second supporting beam (4-2)
The second silicon dioxide insulating layer (17-2) is stated for being electrically insulated.
7. the ellipsoid resonator of high quality factor according to claim 1, which is characterized in that the ellipsoid resonator
Operation mode be B (1,1) mode, B (1, the 1) mode include a nodel line and a pitch circle, the nodel line be located at ellipse
On long axis, two intersection points of the pitch circle and nodel line are the node of B (1,1) mode, and at two nodes, the vibration morpheme of mode is moved
Equal to zero and morpheme of shaking moves and is equal to zero about the gradient of 3 space coordinates；By the long axis and short axle that optimize oval resonator
Ratio makes two nodes be adjusted to long axis both ends, therefore supporting beam is connected with node, inhibits the flexible of supporting beam to play
The function of deformation, bending deformation and torsional deflection is finally reached the purpose for inhibiting supporting beam loss, realizes the humorous of high quality factor
Shake device.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110631569A (en) * | 2019-10-12 | 2019-12-31 | 东南大学 | MEMS single-ring annular vibration gyro structure |
| CN111786645A (en) * | 2020-05-07 | 2020-10-16 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator, filter, electronic device, and method of adjusting electromechanical coupling coefficient |
| CN114674875A (en) * | 2022-03-14 | 2022-06-28 | 电子科技大学 | Method for measuring longitudinal effective piezoelectric coefficient of piezoelectric film |
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| CN110631569A (en) * | 2019-10-12 | 2019-12-31 | 东南大学 | MEMS single-ring annular vibration gyro structure |
| CN111786645A (en) * | 2020-05-07 | 2020-10-16 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator, filter, electronic device, and method of adjusting electromechanical coupling coefficient |
| CN114674875A (en) * | 2022-03-14 | 2022-06-28 | 电子科技大学 | Method for measuring longitudinal effective piezoelectric coefficient of piezoelectric film |
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| CN110120795B (en) | 2022-11-22 |
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