CN110114822A - Display component and its manufacturing method, display and terminal device - Google Patents
Display component and its manufacturing method, display and terminal device Download PDFInfo
- Publication number
- CN110114822A CN110114822A CN201780080323.8A CN201780080323A CN110114822A CN 110114822 A CN110114822 A CN 110114822A CN 201780080323 A CN201780080323 A CN 201780080323A CN 110114822 A CN110114822 A CN 110114822A
- Authority
- CN
- China
- Prior art keywords
- microchip
- driving
- driving microchip
- column
- display component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
Abstract
A kind of display component (200) and its manufacturing method, display and terminal device.Including thin film transistor (TFT) TFT substrate (203), it is characterized in that, the upper surface of TFT substrate (203) is configured with pixel switch array (204) and driving microchip group, driving microchip group is connected with pixel switch array (204), drive any one driving microchip (205 in microchip group, it 206) is monocrystalline silicon microchip, drive any one driving microchip (205 in microchip group, 206) width is less than or equal to 500 μm, and the thickness of any one driving microchip (205,206) is less than or equal to 10 μm.It can reduce the cost of production display component (200), and improve the performance of driving chip in display component (200) and can reduce the width of the frame of display component (200).
Description
This application involves field of display technology, and more particularly, to a kind of display component and its manufacturing method, display and terminal device.
Pixel switch array and row, column driving chip are generally equipped on the substrate of display screen.
At present, the manufacturing about pixel switch array and row, column driving chip, a kind of prior art known, the manufacturing of the technology for pixel switch array and row, column driving chip, same technology is all made of to be manufactured, such as, pass through compatible indium gallium zinc oxide (Indium Gallium Zinc Oxide, IGZO) technology or low temperature polycrystalline silicon (Low Temperature Poly-silicon, LTPS) technology are manufactured.
However, for pixel switch array, the performance of the pixel switch array produced by IGZO technology is more excellent, and correspondingly, the performance of the row, column driving chip produced by LTPS technology is more excellent.Therefore, it for the manufacturing of pixel switch array and row, column driving chip, is manufactured if being all made of same technology, the performance of row, column driving chip or the performance potential of pixel switch array must be subject to certain restrictions.
The known another kind prior art, the technology needs be compatible with indium gallium zinc oxide (Indium Gallium Zinc Oxide simultaneously in the production line, IGZO) with low temperature polycrystalline silicon (Low Temperature Poly-silicon, LTPS) two kinds of different process technologies, such as, pixel switch array is produced by IGZO technique, row, column driving chip is produced by LTPS technique.
However, compatible above two technology can bring larger difficulty to the manufacturing of display screen simultaneously in the production line, while it also will increase manufacturing cost (for example, increasing production line cost of investment).
Summary of the invention
The application provides a kind of display component and its manufacturing method, display and terminal device, it can reduce the cost of production display component, and improve the performance of driving chip in display component and can reduce the width (hereinafter referred to as hem width) of the frame of display component.
First aspect, provide a kind of display component, including thin film transistor (TFT) TFT substrate, it is characterized in that, the upper surface of the TFT substrate is configured with pixel switch array and driving microchip group, the driving microchip group is connected with the pixel switch array, any one driving microchip is monocrystalline silicon microchip in the driving microchip group, the width of any one driving microchip is less than or equal to 500 μm in the driving microchip group, and the thickness of any one driving microchip is less than or equal to 10 μm.
By generating driving chip on monocrystalline silicon piece, and by the driving chip of generation be cut into a large amount of driving microchip (such as, drive microchip group), the upper surface of TFT substrate of the multiple driving microchips transplanting in driving microchip group that finally cutting is formed in display component, to reduce the cost of production display component, and improve the performance of the driving chip in display component.
And, by to wafer (such as, growth has the monocrystalline silicon piece of driving chip) using a large amount of driving microchips of acquisition after the cutting of the technique of wet etching or dry etching, the cutting technique enables to the channel between the chip after cutting smaller, therefore, the width of driving microchip after cutting is also smaller, is conducive to the utilization rate for improving wafer, and then advantageously reduce cost.Under normal conditions, the width of the driving microchip is less than or equal to 500 μm, and the thickness of any one driving microchip is less than or equal to 10 μm.Therefore, the hem width of display component can be reduced to a certain extent.
Optionally, any one driving microchip is that technology transplant is transferred by flood tide in the upper surface of the TFT substrate in the driving microchip group.
Flood tide transfer technology can be realized it is disposable complete greater number (such as, thousands of number) driving microchip transplanting, therefore, for a large amount of driving microchips formed after cutting, technology is transferred by a large amount of driving microchip transplanting in the upper surface of the TFT substrate by flood tide, the transplanting difficulty of a large amount of driving microchips can be reduced, and can be improved transplanting efficiency.With reference to first aspect, in certain implementations of first aspect, the driving microchip group includes at least two rows driving microchip and/or at least two column driving microchips, any one row driving microchip in at least two rows driving microchip is connected at least one-row pixels switch in the pixel switch array, any one column driving microchip in at least two column driving microchip is connected with an at least column pixel switch.
By generating line driving chip and/or column driving chip on monocrystalline silicon piece, and the line driving chip of generation and/or column driving chip are cut into a large amount of row driving microchip and column driving microchip, the upper surface of TFT substrate of the row driving microchip and/or column driving microchip that finally cutting is formed using flood tide transfer technology transplant in display component, to reduce the cost of production display component, and improve the performance (for example, fast speed that control pixel switch array opens/closes) of the driving chip in display component.
With reference to first aspect, in certain implementations of first aspect, the display component further include: control chip, the control chip is connected with any one row driving microchip at least two row driving microchip, any one column driving microchip in at least two column driving microchip respectively, the control chip is configured at the upper surface of the TFT substrate, or the control chip is configured at the upper surface of flexible circuit board FPC, the FPC is contacted with the upper surface portion of the TFT substrate.
With reference to first aspect, in certain implementations of first aspect, the control chip includes at least two control microchips, the control microchip is monocrystalline silicon microchip, the width of any one control microchip is less than or equal to 500 μm in at least two control microchip, and the thickness of any one control microchip is less than or equal to 10 μm.
Optionally, at least two column driving microchip and the control microchip are integrated on the same microchip, and the microchip has the function of the control microchip, and have the function of at least two column driving microchip.
By generating control chip on monocrystalline silicon piece, and the control chip cutting of generation is controlled into microchip to be a large amount of, the upper surface of TFT substrate of the control microchip that finally cutting is formed using flood tide transfer technology transplant in display component is (i.e., control microchip circuit trace corresponding with TFT substrate is attached), realize the conducting of each chip chamber in the TFT substrate in display component, to reduce the production cost of display component, and reduce the width of the lower frame of display component.
With reference to first aspect, in certain implementations of first aspect, the pixel switch array is oxide semiconductor IGZO pixel switch array or low temperature polycrystalline silicon LTPS pixel switch array or amorphous silicon pixel switch array.
With reference to first aspect, in certain implementations of first aspect, the display component is LCD assembly, the LCD assembly further include: the first flatness layer, liquid crystal layer and liquid crystal layer top panel, first flatness layer is configured at the upper surface of the pixel switch array, and the liquid crystal layer is configured between first flatness layer and the liquid crystal layer top panel.
By configuring flatness layer (for example, first flatness layer) in the upper surface of pixel switch array, and liquid crystal layer is configured between the first flatness layer and liquid crystal layer top panel, to control the uniformity of thickness of liquid crystal layer.
With reference to first aspect, in certain implementations of first aspect, the display component further include: the second flatness layer, second flatness layer are located at the lower surface of the liquid crystal layer top panel, and the liquid crystal layer is configured between first flatness layer and second flatness layer.
By the upper surface of pixel switch array configure flatness layer (such as, first flatness layer), and the second flatness layer is configured in the lower surface of liquid crystal layer top panel, so that liquid crystal layer is configured between the first flatness layer and the second flatness layer, and the thickness and its uniformity of liquid crystal layer can be controlled.
With reference to first aspect, in certain implementations of first aspect, the at least two rows driving microchip and at least two column driving microchip are configured at the below or above position of the frame glue layer of the LCD assembly, or, at least two row drives microchip, the frame glue layer of at least two column driving microchip and the LCD assembly is configured at the upper surface of the TFT substrate, and at least two rows driving microchip and at least two column driving microchip are configured at the middle position of the frame glue layer and the liquid crystal layer, or at least two row drives microchip, the frame glue layer of at least two column driving microchip and the LCD assembly is configured at the upper surface of the TFT substrate, and at least two rows driving microchip and at least two column driving microchip are by the frame glue Layer at least partly wraps up.
By the way that at least two row is driven 205 portion envelops of microchip or is all wrapped in the frame glue layer 211, to reduce the overall width that row driving microchip 205 and frame glue layer 211 occupy in TFT substrate 203, and then reduce longitudinal hem width of LCD assembly 200.With reference to first aspect, in certain implementations of first aspect, the thickness range of the liquid crystal layer is 2 μm~7 μm.
Second aspect, provide a kind of method for manufacturing display component, the described method includes: in the upper surface of thin film transistor (TFT) TFT substrate setting pixel switch array and driving microchip group, the driving microchip group is connected with the pixel switch array, any one driving microchip is monocrystalline silicon microchip in the driving microchip group, the width of any one driving microchip is less than or equal to 500 μm in the driving microchip group, the thickness of any one driving microchip is less than or equal to any one driving microchip described in 10 μm by using the technique of wet etching or dry etching to cut on wafer.
In conjunction with second aspect, in certain implementations of second aspect, any one driving microchip transfers technology transplant in the upper surface of the TFT substrate by flood tide in the driving microchip group.
In conjunction with second aspect, in certain implementations of second aspect, the driving microchip group includes at least two rows driving microchip and/or at least two column driving microchips, any one row driving microchip in at least two rows driving microchip is connected at least one-row pixels switch in the pixel switch array, any one column driving microchip in at least two column driving microchip is connected with an at least column pixel switch.
In conjunction with second aspect, in certain implementations of second aspect, the method also includes: in the upper surface of thin film transistor (TFT) TFT substrate setting control chip, the control chip is connected with any one row driving microchip at least two row driving microchip, any one column driving microchip in at least two column driving microchip respectively.
In conjunction with second aspect, in certain implementations of second aspect, the method also includes: in the upper surface of the TFT substrate, flexible circuit board FPC is set, and control chip is set in the upper surface of the FPC, the control chip is connected with any one row driving microchip at least two row driving microchip, any one column driving microchip in at least two column driving microchip respectively, and the FPC is contacted with the upper surface portion of the TFT substrate.
In conjunction with second aspect, in certain implementations of second aspect, the control chip includes at least two control microchips, and the control microchip is monocrystalline silicon microchip, any one control microchip in at least two control microchip
Width is less than or equal to 500 μm, and the thickness of any one control microchip is less than or equal to 10 μm, any one described control microchip on wafer by using the technique of wet etching or dry etching to cut.
In conjunction with second aspect, in certain implementations of second aspect, the method also includes: column driving microchip and the control microchip are integrated on the same microchip, the microchip has the function of the control microchip, and has the function of the column driving microchip.
In conjunction with second aspect, in certain implementations of second aspect, the pixel switch array is oxide semiconductor IGZO pixel switch array, low temperature polycrystalline silicon LTPS pixel switch array or amorphous silicon pixel switch array.
In conjunction with second aspect, in certain implementations of second aspect, in the case where the display component is LCD assembly, the method also includes: in the upper surface of the pixel switch array, the first flatness layer is set；In the top of first flatness layer, liquid crystal layer top panel is set；Liquid crystal layer is set between first flatness layer and the liquid crystal layer top panel.
In conjunction with second aspect, in certain implementations of second aspect, the method also includes: the second flatness layer is arranged in the lower surface of panel on the liquid crystal layer；The liquid crystal layer is set between first flatness layer and second flatness layer.
In conjunction with second aspect, in certain implementations of second aspect, at least two rows driving microchip and at least two column driving microchip are set in the below or above position of the frame glue layer of the LCD assembly；Or at least two rows driving microchip and at least two column driving microchip are set in the middle position of the frame glue layer and the liquid crystal layer, and at least two row driving microchip, at least two column driving microchip and the frame glue layer are set to the upper surface of the TFT substrate；Or the frame glue layer of at least two rows driving microchip, at least two column the driving microchip and the LCD assembly is set in the upper surface of the TFT substrate, and at least two row driving microchip is at least partly wrapped up at least two column driving microchip by the frame glue layer.
In conjunction with second aspect, in certain implementations of second aspect, the thickness range of the liquid crystal layer is 2 μm~7 μm.
The third aspect, provides a kind of display, and the display includes the display component in any one implementation in shell, pedestal and above-mentioned first aspect and first aspect, wherein the display component is configured at the inside of the shell.
Fourth aspect provides a kind of terminal device, which is characterized in that the terminal device include shell and with the display component in any one implementation in above-mentioned first aspect and first aspect, wherein the display component is configured at the inside of the shell.
Fig. 1 is the schematic diagram of existing display component.
Fig. 2 is the schematic diagram of the display component of the embodiment of the present application.
Fig. 3 is another schematic diagram of the display component of the embodiment of the present application.
Fig. 4 is another schematic diagram of the display component of the embodiment of the present application.
Fig. 5 is another schematic diagram of the display component of the embodiment of the present application.
Fig. 6 is the schematic diagram of the cross section of the LCD assembly of the embodiment of the present application.
Fig. 7 is another schematic diagram of the cross section of the LCD assembly of the embodiment of the present application.
Fig. 8 is another schematic diagram of the cross section of the LCD assembly of the embodiment of the present application.
Below in conjunction with attached drawing, the technical solution in the application is described.
The display device of the embodiment of the present application in order to better understand first combines Fig. 1 to carry out letter to existing display component below
Single introduction.
Existing display component is illustrated by taking existing LCD assembly as an example.Fig. 1 is the structural schematic diagram of existing LCD assembly.The LCD assembly 100 can be located in terminal device (for example, mobile phone, tablet computer and other electronic equipments comprising liquid crystal display).As shown in Figure 1, the display component 100 (is covered including liquid crystal layer top panel 101 [], liquid crystal layer by liquid crystal layer top panel 101, be not shown in Fig. 1), TFT substrate 102, pixel switch array (being covered by liquid crystal layer top panel 101, be not shown in Fig. 1), line driving chip 103, column driving chip 104 and control chip 105.
Wherein, the liquid crystal layer top panel 101, liquid crystal layer, pixel switch array and TFT substrate 102 from top to bottom configure in order in the LCD assembly 100, the upper surface of TFT substrate 102 is provided with pixel switch array (to be covered by liquid crystal layer top panel 101, be not shown in Fig. 1), line driving chip 103, column driving chip 104 and control chip 105, the region of the covering pixel switch array on liquid crystal layer top panel 101 constitute the display area of display component 100.
It should be noted that the control chip 105 can also be configured at the upper surface of the flexible circuit board (Flexible Printed Circuits, FPC) 106 of the display component 100, which contacts with the upper surface portion of the TFT substrate 102.
Wherein, line driving chip 103 is connected with every a line pixel switch of pixel switch array, certain a line pixel switch at a time controlling pixel switch array opens or closes, column driving chip 103 is connected with each column of pixel switch array switch, for after certain a line pixel switch of pixel switch array opening, for the corresponding liquid crystal pixel charging of each pixel switch in the row pixel switch, control chip 105 respectively with line driving chip 103, column driving core 104 is connected, for to line driving chip 103, column driving chip 104 is controlled, so that line driving chip 103, column driving chip 104 executes corresponding operating to pixel switch array, to realize the purpose progressively scanned to pixel switch array.
For the LCD assembly 100 in Fig. 1, pixel switch array, line driving chip and column driving chip in the display component can be manufactured by two kinds of technologies to be illustrated separately below.
Technology 1
Pixel switch array, line driving chip, column driving chip are all made of same technology and are manufactured, such as, pass through compatible indium gallium zinc oxide (Indium Gallium Zinc Oxide, IGZO) technology or low temperature polycrystalline silicon (Low Temperature Poly-silicon, LTPS) technology is manufactured, also, pixel switch array, line driving chip and column driving chip directly generate on the tft substrate.
However, for pixel switch array, the performance of the pixel switch array produced by IGZO technology is more excellent, and correspondingly, the performance of the row, column driving chip produced by LTPS technology is more excellent.Therefore, the manufacturing for pixel switch array and line driving chip, column driving chip, if being all made of above-mentioned one of technology to be manufactured, the performance potential of line driving chip, the performance of column driving chip or pixel switch array must be subject to certain restrictions.
Technology 2
The technology is compatible with indium gallium zinc oxide (Indium Gallium Zinc Oxide simultaneously in the production line, IGZO) with low temperature polycrystalline silicon (Low Temperature Poly-silicon, LTPS) two kinds of different process technologies, such as, pixel switch array is produced by IGZO technique, row, column driving chip is produced by LTPS technique.
However, compatible above two technology can bring larger difficulty to the manufacturing of display component simultaneously in the production line, while it also will increase manufacturing cost (for example, increasing production line cost of investment).
In order to reduce the production cost of display component, and improve said chip performance (such as, the speed that control pixel switch array opens/closes), present applicant proposes a kind of display components, by generating driving chip on monocrystalline silicon piece, and the driving chip of generation is cut into a large amount of driving microchip (for example, driving microchip group), finally cutting is formed
Drive the upper surface of TFT substrate of multiple driving microchips transplanting in display component in microchip group (i.e., multiple driving microchips circuit trace corresponding with TFT substrate in microchip group will be driven to be attached), to realize the conducting of each chip chamber in the TFT substrate in display component.
It should be noted that, in the embodiment of the present application, the driving microchip be by wafer (such as, growth has the monocrystalline silicon piece of driving chip) on using obtaining after the cutting of the technique of wet etching or dry etching, the cutting technique enables to the width of the driving microchip after cutting very small, under normal conditions, the width of the driving microchip is less than or equal to 500 μm and the thickness of any one driving microchip is less than or equal to 10 μm.
Since the width of the driving microchip proposed in the embodiment of the present application is less than or equal to 500 μm, the hem width of display component can be reduced.
Fig. 2 is the schematic diagram of the display component of the embodiment of the present application.The display component 200 includes:
Thin film transistor (TFT) TFT substrate 203, configured with pixel switch array 204, (the upper surface of shown component 200 plate 201 is covered for the upper surface of the TFT substrate 203, it is not shown in Fig. 2) and driving microchip group, the driving microchip group is connected with the pixel switch array 204, any one driving microchip is monocrystalline silicon microchip in the driving microchip group, the width of any one driving microchip is less than or equal to 500 μm in the driving microchip group, and the thickness of any one driving microchip is less than or equal to 10 μm.
Wherein, the top panel 201, pixel switch array 204 and TFT substrate 203 from top to bottom configure in order in the display component 200.
Specifically, driving chip is generated on monocrystalline silicon piece first, and will growth have the monocrystalline silicon piece of driving chip using the technique of wet etching or dry etching be cut into a large amount of driving microchip (such as, drive microchip group), and by a large amount of driving microchip transplanting in the upper surface of TFT substrate 203, and any one the driving microchip for being implanted in 203 upper surface of TFT substrate is connected (i.e. with the pixel switch array 204, connect the circuit between the respective pixel switch in any one driving microchip and the pixel switch array 204), so that the driving microchip executes concrete operations to the pixel switch array 204.
Optionally, any one driving microchip is that technology transplant is transferred by flood tide in the upper surface of the TFT substrate in the driving microchip group.
Flood tide transfer technology can be realized it is disposable complete greater number (such as, thousands of number) driving microchip transplanting, therefore, for a large amount of driving microchips formed after cutting, technology is transferred by a large amount of driving microchip transplanting in the upper surface of the TFT substrate by flood tide, the transplanting difficulty of a large amount of driving microchips can be reduced, and can be improved transplanting efficiency.
Optionally, the driving microchip group includes at least two rows driving microchip 205 and/or at least two column driving microchips 206, any one row driving microchip 205 at least two row driving microchip 205 is connected at least one-row pixels switch in the pixel switch array 204, any one column driving microchip 206 in at least two column driving microchip 206 is connected with an at least column pixel switch.Specifically, the high number of row driving microchip 205 and column driving microchip 206 formed for cutting, at least two column driving microchips 206 at least two rows driving microchip 205 and high number of row driving microchip in microchip 205 are driven to transfer technology transplant in the upper surface of TFT substrate 203 by flood tide the high number of row, and any one row driving microchip 205 at least two row for being implanted in 203 upper surface of TFT substrate driving microchip 205 is connected at least one-row pixels of pixel switch array 204 switch, so that any one the column driving microchip 206 being implanted in at least two column driving microchip 206 of 203 upper surface of TFT substrate is connected with an at least column pixel switch for pixel switch array 204, any one row driving is micro- Chip 205 is opened or closed at a time controlling certain a line pixel switch of pixel switch array 204, and at least two column driving microchip 206 in pixel for opening
After certain a line pixel switch opening for closing array 204, for the corresponding liquid crystal pixel charging of each pixel switch in the row pixel switch, control chip is connected at least two row driving column driving microchip 206 of microchip 205, at least two respectively, for controlling at least two row driving column driving microchip 206 of microchip 205, at least two, so that at least two row driving column driving microchip 206 of microchip 205, at least two executes concrete operations to pixel switch array 204.
It should be noted that in the embodiment of the present application, only microchip 205 can be driven to transfer technology transplant in the upper surface of TFT substrate by flood tide the high number of row formed after cutting, column driving chip then uses traditional driving chip；Or only driving microchip 206 to transfer technology transplant in the upper surface of TFT substrate by flood tide a large amount of column formed after cutting, line driving chip then uses traditional driving chip, and the embodiment of the present application is not particularly limited this.
It should also be noted that, the driving microchip can also include other kinds of microchip, the application is not particularly limited this other than including above-mentioned row driving microchip and column driving microchip in the embodiment of the present application.
Optionally, in the embodiment of the present application, which can be oxide semiconductor IGZO pixel switch array or low temperature polycrystalline silicon LTPS pixel switch array or amorphous silicon pixel switch array.Therefore, in the embodiment of the present application, by generating driving chip on monocrystalline silicon piece, and by the driving chip of generation be cut into a large amount of driving microchip (such as, drive microchip group), the upper surface of TFT substrate of the multiple driving microchips transplanting in driving microchip group that finally cutting is formed in display component, to reduce the cost of production display component, and improves the performance of the driving chip in display component.
And, by to wafer (such as, growth has the monocrystalline silicon piece of driving chip) using a large amount of driving microchips of acquisition after the cutting of the technique of wet etching or dry etching, the cutting technique enables to the width of the driving microchip after cutting very small, under normal conditions, the width of the driving microchip is less than or equal to 500 μm.Therefore, the hem width of display component can be reduced to a certain extent.And reduce the hem width of display component simultaneously.
Optionally, as shown in Figure 2, the control chip 207 of the display component 200 can be configured at the upper surface of the TFT substrate, and be connected respectively with any one row driving microchip 205 at least two row driving microchip 205, any one column driving microchip 206 in at least two column driving microchip 206, the flexible circuit board FPC212 in the display component is contacted with the upper surface portion of the TFT substrate 203；
Or, as shown in Figure 3, the control chip 207 can be configured at the upper surface of the flexible circuit board FPC212 in the display component 200, and be connected respectively with any one row driving microchip 205 at least two row driving microchip 205, any one column driving microchip 206 in at least two column driving microchip 206, which contacts with the upper surface portion of the TFT substrate 203.
Optionally, the control chip includes at least two control microchips 207, the control microchip 207 is monocrystalline silicon microchip, the width of any one control microchip is less than or equal to 500 μm in at least two control microchip, and the thickness of any one control microchip is less than or equal to 10 μm.
Specifically, control chip is generated on monocrystalline silicon piece, and the control chip cutting generated on silicon wafer is controlled into microchip 207 to be a large amount of, and the width of any one control microchip 207 in a large amount of control microchip 207 is made to be less than or equal to 500 μm, and the thickness of any one driving microchip is less than or equal to 10 μm.The a large amount of control microchips 207 formed for cutting, at least two control microchips 207 in a large amount of control microchips 207 are transferred into technology transplant on the upper surface of base station by flood tide, and any one the control microchip 207 being implanted in at least two control microchip 207 of 203 upper surface of TFT substrate is connected at least two rows driving microchip 205, and it is connected at least one of at least two column driving microchips 206 column driving microchip 206, as shown in Figure 4, the at least two control microchip 207 is used to drive microchip 205 at least two row, at least two column driving microchips 206 carry out
Control, so that at least two row driving column driving microchip 206 of microchip 205, at least two executes corresponding operating to pixel switch array 204, to realize the purpose progressively scanned to pixel switch array 204.
Such as, the pixel switch array 204 is the switch arrays of 1000*1000 size, it includes that 10 rows drive microchip 205 that at least two row, which drives microchip 205, the at least two column driving microchip 206 includes that 10 column drive microchip 206, the at least two control microchip 207 includes 5 control microchips 207, the pixel switch that any one column driving microchip 206 and 100 in this 10 column driving microchips 206 arranges is connected, the pixel switch of any one row driving row of microchip 205 and 100 in 10 row driving microchips 205 is connected, it is connected between the adjacent control microchip 207 of this 5 any two controlled in microchips 207, and any one control microchip 20 in this 5 control microchips 207 7 are connected with two column driving microchips 206, and the control microchip 207 near row driving microchip 205 in this 5 control microchips 207 is connected with 10 row driving microchips 205.
When the control needs of microchip 207 are scanned the 50th row pixel switch in the 1000 row pixel switch array 204, this 5 207 pairs of microchip of controls need the instruction sent to this 10 column driving microchips 206 with this 10 column driving microchips 206 to synchronize, then it is controlled in microchip 207 from this 5 and sends instruction to 10 row driving microchips 205 near the control microchip 207 of row driving microchip 205, the instruction opens the 50th row pixel switch to 10 row driving instructions of microchip 205, and close the pixel switch of other 999 rows, simultaneously, this 5 control microchips 207 send instruction to this 10 column driving microchips 206, the instruction to the driving instruction of microchips 206 of this 10 column need to be applied to this Voltage value on 50 row liquid crystal pixels.
This 10 column driving microchips 206 after receiving the command adapted thereto that this 5 control microchips 207 are sent, just execute corresponding operation to the pixel switch array 204, so that the 50th row liquid crystal pixel is lit with this 10 column driving microchips 206.
It should be noted that the citing of above-mentioned each numerical value only with exemplary illustration, does not constitute any restriction to the embodiment of the present application.
By generating control chip on monocrystalline silicon piece, and the control chip cutting of generation is controlled into microchip 207 to be a large amount of, the upper surface of TFT substrate 203 of the control microchip 207 that finally cutting is formed using flood tide transfer technology transplant in display component 200 is (i.e., control microchip 207 circuit trace corresponding with TFT substrate 203 is attached), realize the conducting of each chip chamber in the TFT substrate 203 in display component 200, to reduce the vertical range (i.e. the width of the lower frame of display component 200) between the lower edge of liquid crystal layer top panel 201 and the lower edge of TFT substrate 203.
Optionally, in the embodiment of the present application, above-mentioned column driving microchip 206 and control microchip 207 can be same microchip 207, as shown in Figure 5, the microchip 208 and have the function of above-mentioned control microchip 208, and has the function of above-mentioned column driving microchip 208.
Optionally, the display component 200 proposed in the application can be LCD assembly 200, Fig. 6 shows the cross-sectional view of the LCD assembly 200, the LCD assembly 200 is including TFT substrate 203, pixel switch array 204, at least two rows drive microchip 205, on the basis of at least two column driving microchips 206 and control chip 208, the LCD assembly 200 further include: the first flatness layer 209, liquid crystal layer 202 and liquid crystal layer top panel 201, 202 surrounding of liquid crystal layer is configured with frame glue layer 211, the frame glue layer 211 is for preventing the liquid crystal of liquid crystal layer 202 from leaking outside, and the liquid crystal layer top panel 201, liquid crystal layer 202, pixel switch array 204 and TFT substrate 203 are from top to bottom configured in order in the liquid In crystal display assembly 200.First flatness layer 209 is configured at the upper surface of the pixel switch array 204, which is configured between first flatness layer 209 and the liquid crystal layer top panel 201.
Specifically, will go driving microchip 205 and column driving microchip 206 transplanting in the upper surface of TFT substrate 203
Later, it is possible to the case where height of at least two row driving microchip 205 and at least two column driving microchips 206 is higher than liquid crystal and frame glue thickness occur, to influence the control of the certain thickness and the necessary uniformity to liquid crystal layer 202.Therefore, in order to control the thickness and the uniformity of liquid crystal layer 202, the first flatness layer 209 is covered in the upper surface of pixel switch array 204, so that liquid crystal layer 202 and the liquid crystal layer 202 to be configured to the upper surface of first flatness layer 209, i.e. the liquid crystal layer 202 is configured between first flatness layer 209 and the lower surface of the liquid crystal layer top panel 201.
It can be seen that from the cross-sectional view of the LCD assembly 200 shown in Fig. 6, first flatness layer 209 is configured at the upper surface of at least two row driving microchip 205, and liquid crystal layer 202 is then configured between first flatness layer 209 and the lower surface of the liquid crystal layer top panel 201.
By configuring flatness layer (for example, first flatness layer 209) in the upper surface of pixel switch array 204, and liquid crystal layer is configured between the first flatness layer 209 and liquid crystal layer top panel 201, to control the thickness and the uniformity of liquid crystal layer 202.
Optionally, Fig. 7 shows another cross-sectional view of the LCD assembly 200, the LCD assembly 200 is on the basis of including TFT substrate 203, pixel switch array 204, at least two rows driving column of microchip 205, at least two driving microchip 206 and control chip 208, the LCD assembly 200 further include: 209 second flatness layer 210 of the first flatness layer, liquid crystal layer 202 and liquid crystal layer top panel 201,202 surrounding of liquid crystal layer is configured with frame glue layer 211, and the frame glue layer 211 is for preventing the liquid crystal of liquid crystal layer 202 from leaking outside.Second flatness layer 210 is located at the lower surface of the liquid crystal layer top panel 201, which is configured between first flatness layer 209 and second flatness layer 210.
Specifically, the LCD assembly 200 can also include the second flatness layer 210, it can be seen that from the cross-sectional view of the LCD assembly 200 shown in Fig. 7, second flatness layer 210 is located at the lower surface of the liquid crystal layer top panel 201, which is configured between first flatness layer 209 and second flatness layer 210.
By the upper surface of pixel switch array 204 configure flatness layer (such as, first flatness layer 209), and the second flatness layer 210 is configured in the lower surface of liquid crystal layer top panel 201, so that liquid crystal layer 202 is configured between the first flatness layer 209 and the second flatness layer 210, and the thickness and the uniformity of liquid crystal layer 202 can be controlled.
The positional relationship between at least two row driving microchip 205, at least two column driving microchip 206 and the frame glue layer 211 of the LCD assembly is illustrated below with reference to Fig. 8.
Optionally, at least two row driving microchip 205 and at least two column driving microchip 206 are configured at the lower position of the frame glue layer 211 of the LCD assembly, or
The frame glue layer 211 of at least two row driving microchip 205, at least two column driving microchip 206 and the LCD assembly is configured at the upper surface of the TFT substrate 203, and at least two row driving microchip 205 and at least two column driving microchip 206 are configured at the middle position of the frame glue layer 211 and the liquid crystal layer 202.
As shown in Figure 8, the frame glue layer 211 of at least two row driving microchip 205, at least two column driving microchip 206 and the LCD assembly is configured at the upper surface of the TFT substrate 203, and at least two row driving microchip 205 is at least partly wrapped up at least two column driving microchip 206 by the frame glue layer 211.
By the way that at least two row is driven 205 portion envelops of microchip or is all wrapped in the frame glue layer 211, to reduce the overall width that row driving microchip 205 and frame glue layer 211 occupy in TFT substrate 203, and then reduce longitudinal hem width of LCD assembly 200.
Optionally, non-limiting as example, the thickness range of the liquid crystal layer 202 is 2 μm~7 μm.
It should be noted that, at least two rows driving microchip 205 in the LCD assembly 200 can be located at the two sides of pixel switch array 204, row driving microchip 205 positioned at 204 side of pixel switch array can be used for controlling opening or closing for odd-line pixels switch, and the row driving microchip 205 positioned at 204 other side of pixel switch array can be used for controlling
Even rows switch opens or closes；Alternatively, at least two rows driving microchip 205 in the LCD assembly 200 may be located on the same side of pixel switch array 204, the embodiment of the present application is not particularly limited this.
It should be noted that, the TFT substrate in display component 200 that the application proposes is other than being suitable for above-mentioned LCD assembly, it can be applicable to Organic Light Emitting Diode (Organic Light Emitting Diodes, OLED) display component or other kinds of display component, the application are not particularly limited this.
The application further includes a kind of method for manufacturing display component, and this method at least includes the following steps.
Setting pixel switch array and driving microchip group in the upper surface of thin film transistor (TFT) TFT substrate, the driving microchip group is connected with the pixel switch array, any one driving microchip is monocrystalline silicon microchip in the driving microchip group, the width of any one driving microchip is less than or equal to 500 μm in the driving microchip group, and the thickness of any one driving microchip is less than or equal to 10 μm, any one driving microchip on wafer by using the technique of wet etching or dry etching to cut.
Optionally, any one in the driving microchip group drives microchip to transfer technology transplant in the upper surface of the TFT substrate by flood tide.
Optionally, the driving microchip group includes at least two rows driving microchip and/or at least two column driving microchips, any one row driving microchip at least two row driving microchip is connected at least one-row pixels switch in the pixel switch array, any one column driving microchip in at least two column driving microchip is connected with an at least column pixel switch.
Optionally, this method further includes, in the upper surface of thin film transistor (TFT) TFT substrate setting control chip, which is connected with any one row driving microchip at least two row driving microchip, any one column driving microchip in at least two column driving microchip respectively；Or flexible circuit board FPC is set in the upper surface of the TFT substrate, and control chip is set in the upper surface of the FPC, the control chip is connected with any one row driving microchip at least two row driving microchip, any one column driving microchip in at least two column driving microchip respectively, which contacts with the upper surface portion of the TFT substrate.
Optionally, the control chip includes at least two control microchips, the control microchip is monocrystalline silicon microchip, the width of any one control microchip is less than or equal to 500 μm in at least two control microchip, and the thickness of any one control microchip is less than or equal to 10 μm, any one driving microchip on wafer by using the technique of wet etching or dry etching to cut.
Optionally, at least two column driving microchip and the control microchip are integrated on the same microchip, which has the function of the control microchip, and have the function of at least two column driving microchip.
Optionally, which is oxide semiconductor IGZO pixel switch array or low temperature polycrystalline silicon LTPS pixel switch array or amorphous silicon pixel switch array.
Optionally, this method further includes that the first flatness layer is arranged in the upper surface of the pixel switch array；In the top of first flatness layer, liquid crystal layer top panel is set；Liquid crystal layer is set between first flatness layer and the liquid crystal layer top panel.
Optionally, this method further includes that the second flatness layer is arranged in the lower surface of the liquid crystal layer top panel；It is configured in the liquid crystal layer and the liquid crystal layer is set between first flatness layer and second flatness layer.
The control chip is connected with any one row driving microchip at least two row driving microchip, any one column driving microchip in at least two column driving microchip respectively；Or
Flexible circuit board FPC is set in the upper surface of the TFT substrate, and control chip is set in the upper surface of the FPC, which drives with any one row driving microchip, at least two column at least two row driving microchip respectively
Any one column driving microchip in dynamic microchip is connected, which contacts with the upper surface portion of the TFT substrate.
Optionally, which is characterized in that the thickness range of the liquid crystal layer is 2 μm~7 μm.
The application further includes a kind of display, which includes shell and pedestal, wherein the display component 200 is located in shell.
The application further includes a kind of terminal device, which includes display component 200, shell in any embodiment above, wherein the display component 200 is configured at the inside of the shell.The terminal device can be smart phone, tablet computer, wearable device, PC etc..
Those of ordinary skill in the art may be aware that unit described in conjunction with the examples disclosed in the embodiments of the present disclosure and algorithm steps, can be realized with the combination of electronic hardware or computer software and electronic hardware.These functions are implemented in hardware or software actually, the specific application and design constraint depending on technical solution.Professional technician can use different methods to achieve the described function each specific application, but this realization is it is not considered that exceed scope of the present application.
It is apparent to those skilled in the art that for convenience and simplicity of description, system, the specific work process of device and unit of foregoing description can refer to corresponding processes in the foregoing method embodiment, details are not described herein.
In several embodiments provided herein, it should be understood that disclosed systems, devices and methods may be implemented in other ways.Such as, the apparatus embodiments described above are merely exemplary, such as, the division of the unit, only a kind of logical function partition, there may be another division manner in actual implementation, such as multiple units or components can be combined or can be integrated into another system, or some features can be ignored or not executed.Another point, shown or discussed mutual coupling, direct-coupling or communication connection can be through some interfaces, the indirect coupling or communication connection of device or unit, can be electrical property, mechanical or other forms.
The unit as illustrated by the separation member may or may not be physically separated, and component shown as a unit may or may not be physical unit, it can and it is in one place, or may be distributed over multiple network units.It can some or all of the units may be selected to achieve the purpose of the solution of this embodiment according to the actual needs.
In addition, each functional unit in each embodiment of the application can integrate in one processing unit, it is also possible to each unit and physically exists alone, can also be integrated in one unit with two or more units.
If the function is realized in the form of SFU software functional unit and when sold or used as an independent product, can store in a computer readable storage medium.Based on this understanding, substantially the part of the part that contributes to existing technology or the technical solution can be embodied in the form of software products the technical solution of the application in other words, the computer software product is stored in a storage medium, it uses including some instructions so that a computer equipment (can be personal computer, server or the network equipment etc.) execute each embodiment the method for the application all or part of the steps.And storage medium above-mentioned includes: USB flash disk, mobile hard disk, read-only memory (Read-Only Memory, ROM), the various media that can store program code such as random access memory (Random Access Memory, RAM), magnetic or disk.
It is described above; the only specific embodiment of the application, but the protection scope of the application is not limited thereto, and anyone skilled in the art is within the technical scope of the present application; it can easily think of the change or the replacement, should all cover within the scope of protection of this application.Therefore, the protection scope of the application should be based on the protection scope of the described claims.
Claims (26)
- A kind of display component, including thin film transistor (TFT) TFT substrate, it is characterized in that, the upper surface of the TFT substrate is configured with pixel switch array and driving microchip group, the driving microchip group is connected with the pixel switch array, any one driving microchip is monocrystalline silicon microchip in the driving microchip group, and the width of any one driving microchip is less than or equal to 500 μm in the driving microchip group, and the thickness of any one driving microchip is less than or equal to 10 μm.
- According to display component described in right 1, any one driving microchip is that technology transplant is transferred by flood tide in the upper surface of the TFT substrate in the driving microchip group.
- Display component according to claim 1 or 2, it is characterized in that, the driving microchip group includes at least two rows driving microchip and/or at least two column driving microchips, any one row driving microchip in at least two rows driving microchip is connected at least one-row pixels switch in the pixel switch array, any one column driving microchip in at least two column driving microchip is connected with an at least column pixel switch.
- Display component according to claim 3, which is characterized in that the display component further include:Control chip, the control chip is connected with any one row driving microchip at least two row driving microchip, any one column driving microchip in at least two column driving microchip respectively, and the control chip is configured at the upper surface of the TFT substrate.
- Display component according to claim 4, which is characterized in that the control chip is configured at the upper surface of flexible circuit board FPC, and the FPC is contacted with the upper surface portion of the TFT substrate.
- Display component according to claim 4, it is characterized in that, the control chip includes at least two control microchips, the control microchip is monocrystalline silicon microchip, the width of any one control microchip is less than or equal to 500 μm in at least two control microchip, and the thickness of any one control microchip is less than or equal to 10 μm.
- Display component according to claim 6, which is characterized in that the column driving microchip and the control microchip are integrated on the same microchip, and the microchip has the function of the control microchip, and have the function of the column driving microchip.
- Display component according to any one of claim 1 to 7, which is characterized in that the pixel switch array is oxide semiconductor IGZO pixel switch array, low temperature polycrystalline silicon LTPS pixel switch array or amorphous silicon pixel switch array.
- Display component according to any one of claim 1 to 8, which is characterized in that the display component is LCD assembly, the LCD assembly further include:First flatness layer, liquid crystal layer and liquid crystal layer top panel, first flatness layer are configured at the upper surface of the pixel switch array, and the liquid crystal layer is configured between first flatness layer and the liquid crystal layer top panel.
- Display component according to claim 9, which is characterized in that the display component further include:Second flatness layer, second flatness layer are located at the lower surface of the liquid crystal layer top panel, and the liquid crystal layer is configured between first flatness layer and second flatness layer.
- Display component according to claim 9 or 10, which is characterized in that at least two rows driving microchip and described at least two arranges the below or above position that driving microchip is configured at the frame glue layer of the LCD assembly, orThe frame glue of at least two rows driving microchip, at least two column the driving microchip and the LCD assembly Layer is configured at the upper surface of the TFT substrate, and at least two row driving microchip and at least two column driving microchip are configured at the middle position of the frame glue layer and the liquid crystal layer, orThe frame glue layer of at least two rows driving microchip, at least two column driving microchip and the LCD assembly is configured at the upper surface of the TFT substrate, and at least two row driving microchip is at least partly wrapped up at least two column driving microchip by the frame glue layer.
- The display component according to any one of claim 9 to 11, which is characterized in that the thickness range of the liquid crystal layer is 2 μm~7 μm.
- A method of manufacture display component, which is characterized in that the described method includes:Setting pixel switch array and driving microchip group in the upper surface of thin film transistor (TFT) TFT substrate, the driving microchip group is connected with the pixel switch array, any one driving microchip is monocrystalline silicon microchip in the driving microchip group, the width of any one driving microchip is less than or equal to 500 μm in the driving microchip group, and the thickness of any one driving microchip is less than or equal to any one driving microchip described in 10 μm by using the technique of wet etching or dry etching to cut on wafer.
- According to the method for claim 13, any one in the driving microchip group drives microchip to transfer technology transplant in the upper surface of the TFT substrate by flood tide.
- Method described in 3 or 14 according to claim 1, it is characterized in that, the driving microchip group includes at least two rows driving microchip and/or at least two column driving microchips, any one row driving microchip in at least two rows driving microchip is connected at least one-row pixels switch in the pixel switch array, any one column driving microchip in at least two column driving microchip is connected with an at least column pixel switch.
- According to the method for claim 15, which is characterized in that the method also includes:In the upper surface of thin film transistor (TFT) TFT substrate setting control chip, the control chip is connected with any one row driving microchip at least two row driving microchip, any one column driving microchip in at least two column driving microchip respectively.
- According to the method for claim 15, which is characterized in that the method also includes:In the upper surface of the TFT substrate, flexible circuit board FPC is set, and control chip is set in the upper surface of the FPC, the control chip is connected with any one row driving microchip at least two row driving microchip, any one column driving microchip in at least two column driving microchip respectively, and the FPC is contacted with the upper surface portion of the TFT substrate.
- According to the method for claim 16, it is characterized in that, the control chip includes at least two control microchips, the control microchip is monocrystalline silicon microchip, the width of any one control microchip is less than or equal to 500 μm in at least two control microchip, and the thickness of any one control microchip is less than or equal to 10 μm, any one described control microchip on wafer by using the technique of wet etching or dry etching to cut.
- According to the method for claim 18, which is characterized in that the method also includes:Column driving microchip and the control microchip are integrated on the same microchip, the microchip has the function of the control microchip, and has the function of the column driving microchip.
- Method described in any one of 3 to 19 according to claim 1, which is characterized in that the pixel switch array is oxide semiconductor IGZO pixel switch array, low temperature polycrystalline silicon LTPS pixel switch array or amorphous silicon pixel switch array.
- Method described in any one of 3 to 20 according to claim 1, which is characterized in that the display component be liquid In the case where crystal display assembly, the method also includes:In the upper surface of the pixel switch array, the first flatness layer is set；In the top of first flatness layer, liquid crystal layer top panel is set；Liquid crystal layer is set between first flatness layer and the liquid crystal layer top panel.
- According to the method for claim 21, which is characterized in that the method also includes:The second flatness layer is arranged in the lower surface of panel on the liquid crystal layer；The liquid crystal layer is set between first flatness layer and second flatness layer.
- The method according to claim 21 or 22, which is characterized in thatIn the below or above position of the frame glue layer of the LCD assembly, at least two rows driving microchip and at least two column driving microchip are set；OrAt least two rows driving microchip and at least two column driving microchip are set in the middle position of the frame glue layer and the liquid crystal layer, and at least two row driving microchip, at least two column driving microchip and the frame glue layer are set to the upper surface of the TFT substrate；OrThe frame glue layer of at least two rows driving microchip, at least two column the driving microchip and the LCD assembly is set in the upper surface of the TFT substrate, and at least two row driving microchip is at least partly wrapped up at least two column driving microchip by the frame glue layer.
- The method according to any one of claim 21 to 23, which is characterized in that the thickness range of the liquid crystal layer is 2 μm~7 μm.
- A kind of display, which is characterized in that the display includes shell, pedestal and the display component as described in any one of claims 1 to 12, wherein the display component is set to the inside of the shell.
- A kind of terminal device, which is characterized in that the terminal device includes shell and the display component as described in any one of claims 1 to 12, wherein the display component is set to the inside of the shell.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2017/108506 WO2019084751A1 (en) | 2017-10-31 | 2017-10-31 | Display assembly, manufacturing method therefor, display, and terminal device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110114822A true CN110114822A (en) | 2019-08-09 |
Family
ID=66331138
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780080323.8A Pending CN110114822A (en) | 2017-10-31 | 2017-10-31 | Display component and its manufacturing method, display and terminal device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN110114822A (en) |
| WO (1) | WO2019084751A1 (en) |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1391287A (en) * | 2001-06-08 | 2003-01-15 | 三洋电机株式会社 | Integrated circuit chip and display device therewith |
| JP3744450B2 (en) * | 2001-05-09 | 2006-02-08 | セイコーエプソン株式会社 | Electro-optical device, driving IC and electronic device |
| TWI298110B (en) * | 2001-07-31 | 2008-06-21 | Hitachi Ltd | Liquid crystal display device |
| CN102160181A (en) * | 2008-08-14 | 2011-08-17 | 全球Oled科技有限责任公司 | Oled device with embedded chip driving |
| CN102239560A (en) * | 2008-10-23 | 2011-11-09 | 剑桥显示技术有限公司 | Display drivers |
| CN102405493A (en) * | 2009-02-17 | 2012-04-04 | 全球Oled科技有限责任公司 | Chiplet driver pairs for two-dimensional display |
| CN102804381A (en) * | 2009-06-23 | 2012-11-28 | 全球Oled科技有限责任公司 | Applying chiplets to substrates |
| US8981374B2 (en) * | 2013-01-30 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US20150340262A1 (en) * | 2013-06-04 | 2015-11-26 | LuxVue Technology Corporation | Mass transfer system |
| TWI521690B (en) * | 2011-07-25 | 2016-02-11 | 財團法人工業技術研究院 | Transfer-bonding method for light-emitting devices and light-emitting device array |
| CN105527744A (en) * | 2016-02-01 | 2016-04-27 | 武汉华星光电技术有限公司 | Color film substrate manufacturing method |
| US20160196998A1 (en) * | 2012-05-25 | 2016-07-07 | LuxVue Technology Corporation | Micro device transfer head array |
| CN106324880A (en) * | 2016-10-12 | 2017-01-11 | 深圳市华星光电技术有限公司 | Production method of liquid crystal substrate |
| US20170048976A1 (en) * | 2015-08-10 | 2017-02-16 | X-Celeprint Limited | Chiplets with connection posts |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3719909B2 (en) * | 2000-05-24 | 2005-11-24 | 洋太郎 畑村 | Parts manufacturing method |
| GB2500579B (en) * | 2012-03-23 | 2015-10-14 | Cambridge Display Tech Ltd | Semiconductor Application Method and Product |
-
2017
- 2017-10-31 WO PCT/CN2017/108506 patent/WO2019084751A1/en active Application Filing
- 2017-10-31 CN CN201780080323.8A patent/CN110114822A/en active Pending
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3744450B2 (en) * | 2001-05-09 | 2006-02-08 | セイコーエプソン株式会社 | Electro-optical device, driving IC and electronic device |
| CN1391287A (en) * | 2001-06-08 | 2003-01-15 | 三洋电机株式会社 | Integrated circuit chip and display device therewith |
| TWI298110B (en) * | 2001-07-31 | 2008-06-21 | Hitachi Ltd | Liquid crystal display device |
| CN102160181A (en) * | 2008-08-14 | 2011-08-17 | 全球Oled科技有限责任公司 | Oled device with embedded chip driving |
| CN102239560A (en) * | 2008-10-23 | 2011-11-09 | 剑桥显示技术有限公司 | Display drivers |
| CN102405493A (en) * | 2009-02-17 | 2012-04-04 | 全球Oled科技有限责任公司 | Chiplet driver pairs for two-dimensional display |
| CN102804381A (en) * | 2009-06-23 | 2012-11-28 | 全球Oled科技有限责任公司 | Applying chiplets to substrates |
| TWI521690B (en) * | 2011-07-25 | 2016-02-11 | 財團法人工業技術研究院 | Transfer-bonding method for light-emitting devices and light-emitting device array |
| US20160196998A1 (en) * | 2012-05-25 | 2016-07-07 | LuxVue Technology Corporation | Micro device transfer head array |
| US8981374B2 (en) * | 2013-01-30 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US20150340262A1 (en) * | 2013-06-04 | 2015-11-26 | LuxVue Technology Corporation | Mass transfer system |
| US20170048976A1 (en) * | 2015-08-10 | 2017-02-16 | X-Celeprint Limited | Chiplets with connection posts |
| CN105527744A (en) * | 2016-02-01 | 2016-04-27 | 武汉华星光电技术有限公司 | Color film substrate manufacturing method |
| CN106324880A (en) * | 2016-10-12 | 2017-01-11 | 深圳市华星光电技术有限公司 | Production method of liquid crystal substrate |
Non-Patent Citations (2)
| Title |
|---|
| 51TOUCH: "Micro LED技术原理,Micro LED与OLED技术对比", 《MICRO LED技术原理,MICRO LED与OLED技术对比》 * |
| 廖燕平 等: "《薄膜晶体管液晶显示器显示原理与设计》", 31 March 2016 * |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019084751A1 (en) | 2019-05-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10032841B2 (en) | Silicon and semiconducting oxide thin-film transistor displays | |
| US10312264B2 (en) | Display device and electronic device | |
| CN107924964B (en) | Light-emitting panel and method for producing such a light-emitting panel | |
| CN103715196B (en) | Array substrate, manufacturing method thereof and display device | |
| US9685469B2 (en) | Display with semiconducting oxide and polysilicon transistors | |
| US20160307988A1 (en) | Organic Light-Emitting Diode Displays with Silicon and Semiconducting Oxide Thin-Film Transistors | |
| CN104865726B (en) | A kind of array substrate, display panel, display device and preparation method | |
| CN107170764B (en) | Array substrate, manufacturing method of array substrate, display panel and display device | |
| WO2017053477A1 (en) | Hybrid micro-driver architectures having time multiplexing for driving displays | |
| US10516014B2 (en) | Touch OLED display panel and display apparatus | |
| US9601517B2 (en) | Hybrid pixel control circuits for light-emitting diode display | |
| CN109860224B (en) | Display substrate, manufacturing method thereof, display panel and display device | |
| US11355056B2 (en) | Local active matrix architecture | |
| WO2021189335A1 (en) | Display panel and display device | |
| CN106200162A (en) | A kind of array base palte, display floater and display device | |
| CN109427865B (en) | Electroluminescent display and method for manufacturing the same | |
| US9087858B2 (en) | Manufacturing method of a semiconductor device | |
| KR102605250B1 (en) | Semiconductor device and method of manufacturing the same | |
| CN105051588B (en) | Monoblock type raises aperture layer and display device | |
| WO2021203358A1 (en) | Display panel and display apparatus | |
| CN110114822A (en) | Display component and its manufacturing method, display and terminal device | |
| US10522087B2 (en) | Display having gate driver bootstrapping circuitry with enhanced-efficiency | |
| CN203456466U (en) | Electroluminescent device | |
| CN109147654A (en) | Display base plate and display device | |
| CN104460165A (en) | Liquid crystal display, liquid crystal panel and array substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190809 |
|
| RJ01 | Rejection of invention patent application after publication |