CN110113008A - 一种压控振荡电路及压控振荡器 - Google Patents
一种压控振荡电路及压控振荡器 Download PDFInfo
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- CN110113008A CN110113008A CN201910472730.4A CN201910472730A CN110113008A CN 110113008 A CN110113008 A CN 110113008A CN 201910472730 A CN201910472730 A CN 201910472730A CN 110113008 A CN110113008 A CN 110113008A
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- transistor
- module
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- voltage
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- 230000010355 oscillation Effects 0.000 title claims abstract description 175
- 230000003139 buffering effect Effects 0.000 claims abstract description 30
- 238000002955 isolation Methods 0.000 claims abstract description 28
- 238000012545 processing Methods 0.000 claims abstract description 19
- 230000008878 coupling Effects 0.000 claims abstract description 16
- 238000010168 coupling process Methods 0.000 claims abstract description 16
- 238000005859 coupling reaction Methods 0.000 claims abstract description 16
- 239000003990 capacitor Substances 0.000 claims description 33
- 230000000694 effects Effects 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 238000002347 injection Methods 0.000 abstract description 11
- 239000007924 injection Substances 0.000 abstract description 11
- 230000009467 reduction Effects 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 description 20
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 230000003321 amplification Effects 0.000 description 6
- 238000003199 nucleic acid amplification method Methods 0.000 description 6
- 230000000295 complement effect Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 238000001914 filtration Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006880 cross-coupling reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000009659 non-destructive testing Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201910472730.4A CN110113008A (zh) | 2019-05-31 | 2019-05-31 | 一种压控振荡电路及压控振荡器 |
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CN201910472730.4A CN110113008A (zh) | 2019-05-31 | 2019-05-31 | 一种压控振荡电路及压控振荡器 |
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CN110113008A true CN110113008A (zh) | 2019-08-09 |
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CN201910472730.4A Pending CN110113008A (zh) | 2019-05-31 | 2019-05-31 | 一种压控振荡电路及压控振荡器 |
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CN (1) | CN110113008A (zh) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010005320A (ko) * | 1999-06-30 | 2001-01-15 | 이형도 | 전압 제어 발진기의 피이드백 회로 |
US20080129403A1 (en) * | 2006-11-30 | 2008-06-05 | National Taiwan University Of Science & Technology | Dual-band voltage controlled oscillator |
CN102868366A (zh) * | 2012-10-12 | 2013-01-09 | 中国科学院微电子研究所 | 一种高频压控振荡器 |
CN103731140A (zh) * | 2012-10-12 | 2014-04-16 | 中国科学院微电子研究所 | 一种具有低相位噪声的高频压控振荡器 |
US8830007B1 (en) * | 2012-03-19 | 2014-09-09 | Scientific Components Corporation | Ultra-low noise VCO |
CN107623492A (zh) * | 2017-10-31 | 2018-01-23 | 广西师范大学 | 一种高频宽带压控振荡器及其运作方法 |
CN209805769U (zh) * | 2019-05-31 | 2019-12-17 | 华讯方舟科技有限公司 | 一种压控振荡电路及压控振荡器 |
-
2019
- 2019-05-31 CN CN201910472730.4A patent/CN110113008A/zh active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010005320A (ko) * | 1999-06-30 | 2001-01-15 | 이형도 | 전압 제어 발진기의 피이드백 회로 |
US20080129403A1 (en) * | 2006-11-30 | 2008-06-05 | National Taiwan University Of Science & Technology | Dual-band voltage controlled oscillator |
US8830007B1 (en) * | 2012-03-19 | 2014-09-09 | Scientific Components Corporation | Ultra-low noise VCO |
CN102868366A (zh) * | 2012-10-12 | 2013-01-09 | 中国科学院微电子研究所 | 一种高频压控振荡器 |
CN103731140A (zh) * | 2012-10-12 | 2014-04-16 | 中国科学院微电子研究所 | 一种具有低相位噪声的高频压控振荡器 |
CN107623492A (zh) * | 2017-10-31 | 2018-01-23 | 广西师范大学 | 一种高频宽带压控振荡器及其运作方法 |
CN209805769U (zh) * | 2019-05-31 | 2019-12-17 | 华讯方舟科技有限公司 | 一种压控振荡电路及压控振荡器 |
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Effective date of registration: 20231128 Address after: Building 7-6, Industrial Control Cloud Creation Port, No. 58 Hongtu Avenue, Honggutan District, Nanchang City, Jiangxi Province, 330000 Applicant after: Jiangxi Huaxun Fangzhou Intelligent Technology Co.,Ltd. Address before: 518000 107, building 37, chentian Industrial Zone, chentian community, Xixiang street, Bao'an District, Shenzhen, Guangdong Province Applicant before: Shenzhen Huaxun ark Intelligent Information Technology Co.,Ltd. |