CN110112209A - A kind of fast recovery diode structure based on 3 D semiconductor wafer - Google Patents
A kind of fast recovery diode structure based on 3 D semiconductor wafer Download PDFInfo
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- CN110112209A CN110112209A CN201910497593.XA CN201910497593A CN110112209A CN 110112209 A CN110112209 A CN 110112209A CN 201910497593 A CN201910497593 A CN 201910497593A CN 110112209 A CN110112209 A CN 110112209A
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- 238000011084 recovery Methods 0.000 title claims abstract description 32
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 230000004888 barrier function Effects 0.000 claims abstract description 62
- 238000003780 insertion Methods 0.000 claims abstract description 7
- 230000037431 insertion Effects 0.000 claims abstract description 7
- 238000010276 construction Methods 0.000 claims 1
- 238000002347 injection Methods 0.000 abstract description 6
- 239000007924 injection Substances 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000003754 machining Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 6
- 239000000969 carrier Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000012545 processing Methods 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
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- 239000000243 solution Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8613—Mesa PN junction diodes
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Abstract
The present invention relates to a kind of fast recovery diode structures based on 3 D semiconductor wafer, first electrode layer, front conductting layer, barrier layer, backside layer and the second electrode lay including successively layer arrangement, direction in the barrier layer perpendicular to its both sides of the face, which is embedded with, forms articulamentum by the connector that multiple array-likes are distributed, connector one end in the articulamentum is embedded in the barrier layer, and the other end is connect in an end face of the barrier layer with the front conductting layer or backside layer.The present invention in barrier layer due to introducing articulamentum, the articulamentum is distributed by multiple array-likes and is formed perpendicular to the connector of the direction of barrier layer both ends of the surface insertion, the structure can form alternatively distributed depth/shallow PN junction, to achieve the purpose that control nonequilibrium carrier injection efficiency, allow diode to be effectively reduced the injection efficiency of device anode or cathode in conducting, improves the switching speed of device.The invention superior performance, process for machining and manufacturing are easy to accomplish and at low cost.
Description
Technical field
The present invention relates to a kind of fast recovery diode structure, a kind of fast recovery diode knot based on 3 D semiconductor wafer
Structure belongs to power semiconductor field.
Background technique
Power semiconductor is the basis of power electronic technique, the appearance of generation novel power semiconductor, federation
Bring the revolution of power electronic technique.To power generation, electric energy transmission and power management techniques, more stringent requirements are proposed for modern society,
The research of New Type Power Devices is promoted to develop further towards high-power, high frequency.
In recent years, insulated gate bipolar transistor (IGBT), the wholly-controled devices such as vertical proliferation field effect transistor (VDMOS)
Performance be greatly improved, the fast recovery diode (FRD) being used in conjunction with therewith has become ground weak in route
Side.Fast recovery diode is also to broader safety operation area, higher pressure resistance, lower leakage current, faster turnaround time, more
Soft recovery characteristics development.
At present have research record, to the reverse recovery characteristic of FRD play a decisive role be conducting when excess carriers exist
The distribution of base area.The distribution of excess carriers is primarily now controlled there are two types of method, first is that carrier lifetime control technology, separately
One is emitter injection efficiency control technologies.Carrier lifetime is mainly by introducing complex centre in device inside, effectively
Reduction nonequilibrium carrier service life to controlling the turn-off time, mainly include heavy metal doping (gold, platinum, palladium), electronics spoke
Global carrier lifetime control technology in impinging upon and the local carrier longevity including proton irradiation, including alpha particle irradiation
Order control technology；Emitter injection efficiency control technology is mainly to pass through to reduce the nonequilibrium carrier that electrode is injected into drift region
Quantity reduces turn-off time of FRD.Although both technologies can efficiently control excess carriers, to improve FRD's
Performance, however in order to control excess carriers in the concentration distribution of base area, it needs to draw in the manufacturing process of fast recovery diode
Enter additional processing step, such as one, electron irradiation or under the high temperature conditions is carried out to silicon semiconductor, it is injected in silicon semiconductor
And gold or platinum are spread as complex centre；Two, SSD diode: at least more step ion implantings and diffusion are needed, in diode
The P that anode forms alternately composition is shallowly saved and P+ is saved deeply；Three, SPEED diode: at least more step ion implantings and divergent contour are needed
At the structure that high concentration region and low concentration region are inlayed, this can not only greatly improve cost, also will affect yields.
Summary of the invention
Technical problem to be solved by the invention is to provide a kind of fast recovery diode knots based on 3 D semiconductor wafer
Structure simplifies two poles of fast recovery in the Carrier Profile for improving diode drift region while improving the performance of fast recovery diode
The processing step of pipe reduces manufacturing cost.
The technical scheme to solve the above technical problems is that a kind of fast recovery two based on 3 D semiconductor wafer
Pole pipe structure, first electrode layer, front conductting layer, barrier layer, backside layer and the second electrode lay including successively layer arrangement,
Direction in the barrier layer perpendicular to its both sides of the face, which is embedded with, forms articulamentum by the connector that multiple array-likes are distributed, institute
The connector one end stated in articulamentum is embedded in the barrier layer, and the other end is in the end face and the front of the barrier layer
Conductting layer or the connection of backside layer.
The beneficial effects of the present invention are: the present invention, due to introducing articulamentum in barrier layer, which is by multiple battle arrays
Connector that is that column-shaped is distributed and being embedded in perpendicular to the direction of barrier layer both ends of the surface is formed, which can form alternatively distributed
Deep/shallow PN junction drops diode effectively in conducting to achieve the purpose that control nonequilibrium carrier injection efficiency
The injection efficiency of low device anode or cathode improves the switching speed of device, and the structure is simple, and processing and manufacturing is easy and cost
It is low.
Based on the above technical solution, the present invention can also be improved as follows.
A kind of present invention fast recovery diode structure based on 3 D semiconductor wafer as described above, further, described the
One electrode layer is anode electrode layer, and the front conductting layer is the high concentration region that conductivity model is p-type, and the barrier layer is conduction
The high resistance area of model N-type；The articulamentum is the high concentration region that conductivity model is N-type, the connector one in the articulamentum
Inside end insertion barrier layer, the other end is connected in the bottom surface of barrier layer with backside layer；Backside layer is conductivity model
For the low-resistance region of N-type；The second electrode lay is negative electrode layer.
A kind of present invention fast recovery diode structure based on 3 D semiconductor wafer as described above, further, the first electricity
Pole layer is anode electrode layer；The front conductting layer is the low-resistance region that conductivity model is p-type；Articulamentum is that conductivity model is p-type
High concentration region, inside connector one end insertion barrier layer in the articulamentum, the other end is in its top surface and front conductting layer
Connection；Barrier layer is the high resistance area that conductivity model is N-type；Backside layer is the low-resistance region that conductivity model is N-type；Described second
Electrode layer is negative electrode layer.
A kind of present invention fast recovery diode structure based on 3 D semiconductor wafer as described above, further, the company
Connecing layer is two layers, and connector one end therein is embedded in the barrier layer, and the other end of the connector in two layers respectively corresponds
It is connect in the both sides of the face of the barrier layer with front conductting layer and backside layer.
It is 80-140 μm that connector one end of the present invention, which is embedded in the depth in the barrier layer,.
The further beneficial effect of the present invention is: connector is obtained in the articulamentum that the top layer of barrier layer and bottom are formed
Drift region obtains ideal nonequilibrium carrier distribution, can further promote the performance of fast recovery diode.
A kind of present invention fast recovery diode structure based on 3 D semiconductor wafer as described above, further, the company
Connecing layer is front articulamentum and back side articulamentum, and the first electrode layer is anode electrode layer；Front conductting layer is conductivity model
For the low-resistance region of p-type；The front articulamentum is the high concentration region that conductivity model is p-type, the connector of the front articulamentum
One end is embedded in inside N-type barrier layer, and the other end is connect in barrier layer top surface with front conductting layer；Barrier layer is that conductivity model is N
The high resistance area of type；The back side articulamentum is the high concentration region that conductivity model is N-type, connector one end insertion of back side articulamentum
Inside N-type barrier layer, the other end is connect in the bottom surface of barrier layer with conductting layer；Backside layer is that conductivity model is the low of N-type
Hinder area；The second electrode lay is negative electrode layer.
A kind of present invention fast recovery diode structure based on 3 D semiconductor wafer as described above, further, the company
Junctor is prismatic, cylindrical, round or ellipse structure.
A kind of present invention fast recovery diode structure based on 3 D semiconductor wafer as described above, further, described the
Cylindrical structure is successively integrally formed in one electrode layer, front conductting layer, barrier layer, backside layer and the second electrode lay.
The present invention structure can reduce the manufacture difficulty of diode chip for backlight unit, promote yields.
Detailed description of the invention
Fig. 1 is that anode/P+/N-/bottom surface N+/N+ type fast recovery diode structure that present example provides splits schematic diagram
Fig. 2 is that anode/P/P+/N-/bottom surface N-type fast recovery diode structure that present example provides splits schematic diagram
Fig. 3 is that anode/P/P+/N-/bottom surface N+/N type fast recovery diode structure that present example provides splits signal
Figure
In attached drawing, parts list represented by the reference numerals are as follows:
1, first electrode layer, 2, front conductting layer, 3, barrier layer, 4, articulamentum, 5, backside layer, 6, second electrode
Layer.
Specific embodiment
The principle and features of the present invention will be described below with reference to the accompanying drawings, and the given examples are served only to explain the present invention, and
It is non-to be used to limit the scope of the invention.
As shown in Figures 1 to 3, according to embodiments of the present invention based on the fast recovery diode structure of 3 D semiconductor wafer, packet
The successively first electrode layer of layer arrangement, front conductting layer, barrier layer, backside layer and the second electrode lay are included, is hung down in barrier layer
It is directly embedded in the direction of its both sides of the face and articulamentum is formed by the connector that multiple array-likes are distributed, the connector in articulamentum
One end is embedded in barrier layer, and the other end is connect in an end face of barrier layer with front conductting layer or backside layer.
According to embodiments of the present invention, specifically, as shown in Figure 1, first electrode layer is anode electrode layer, front conductting layer 2
It is the high concentration region that conductivity model is p-type, barrier layer is the high resistance area that conductivity model is N-type；Articulamentum is that conductivity model is N-type
High concentration region, inside connector one end insertion barrier layer in articulamentum, bottom surface and backside of the other end in barrier layer
Layer is connected；Backside layer is the low-resistance region that conductivity model is N-type；The second electrode lay is negative electrode layer.
In certain embodiments, as shown in Fig. 2, first electrode layer is anode electrode layer；Front conductting layer 2 is conduction
The low-resistance region of model p-type；Articulamentum is the high concentration region that conductivity model is p-type, and connector one end in articulamentum is embedded in resistance
Inside tomography, the other end is connect in its top surface with front conductting layer；Barrier layer 4 is the high resistance area that conductivity model is N-type；It leads at the back side
Logical layer 5 is the low-resistance region that conductivity model is N-type；The second electrode lay is negative electrode layer.
In other specific embodiments, two layers of articulamentum, connector one end therein is embedded in barrier layer, and two layers
In the other end of connector respectively correspond the both sides of the face in barrier layer and connect with front conductting layer and backside layer.Connection
Body one end is embedded in 80-140 μm of the depth in barrier layer.
Specifically, articulamentum is front articulamentum 41 and back side articulamentum 42, and first electrode layer is anode electrode layer；Front
Conductting layer 2 is the low-resistance region that conductivity model is p-type；Front articulamentum is the high concentration region that conductivity model is p-type, front articulamentum
Inside 41 3 one end of connector insertion N-type barrier layer 4, the other end is connect in 4 top surface of barrier layer with front conductting layer 2；Barrier layer
4 be the high resistance area that conductivity model is N-type；Back side articulamentum 42 is the high concentration region that conductivity model is N-type, the company of back side articulamentum
5 one end of junctor is embedded in inside N-type barrier layer 4, and the other end is connect in the bottom surface of barrier layer with conductting layer 6；Backside layer 6 is to lead
The low-resistance region of electric model N-type；The second electrode lay is negative electrode layer.
Specifically, in the embodiment of the present invention connector can choose section be it is prismatic, cylindrical,
The column structure of round or ellipse.
It is given in specific embodiment one, first electrode layer, front conductting layer, barrier layer, backside layer and second electrode
Cylindrical structure is successively integrally formed in layer.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (7)
1. a kind of fast recovery diode structure based on 3 D semiconductor wafer, which is characterized in that including successively layer arrangement
One electrode layer, front conductting layer, barrier layer, backside layer and the second electrode lay, the barrier layer are interior perpendicular to its two side ends
The direction in face, which is embedded with, forms articulamentum by the connector that multiple array-likes are distributed, and connector one end in the articulamentum is embedded
In the barrier layer, the other end is connect in an end face of the barrier layer with the front conductting layer or backside layer.
2. a kind of fast recovery diode structure based on 3 D semiconductor wafer according to claim 1, which is characterized in that institute
Stating first electrode layer is anode electrode layer, and the front conductting layer 2 is the high concentration region that conductivity model is p-type, the barrier layer
It is the high resistance area of N-type for conductivity model；The articulamentum is the high concentration region that conductivity model is N-type, the company in the articulamentum
Junctor one end is embedded in inside barrier layer, and the other end is connected in the bottom surface of barrier layer with backside layer；Backside layer is to lead
The low-resistance region of electric model N-type；The second electrode lay is negative electrode layer.
3. a kind of fast recovery diode structure based on 3 D semiconductor wafer according to claim 1, which is characterized in that the
One electrode layer is anode electrode layer；The front conductting layer 2 is the low-resistance region that conductivity model is p-type；Articulamentum is conductivity model
For the high concentration region of p-type, inside connector one end insertion barrier layer in the articulamentum, the other end is led in its top surface with front
Logical layer connection；Barrier layer 4 is the high resistance area that conductivity model is N-type；Backside layer 5 is the low-resistance region that conductivity model is N-type；Institute
Stating the second electrode lay is negative electrode layer.
4. a kind of fast recovery diode structure based on 3 D semiconductor wafer according to claim 1, which is characterized in that institute
Stating articulamentum is two layers, and connector one end therein is embedded in the barrier layer, the other end difference of the connector in two layers
The corresponding both sides of the face in the barrier layer are connect with front conductting layer and backside layer.
5. a kind of fast recovery diode structure based on 3 D semiconductor wafer according to claim 4, which is characterized in that institute
Stating articulamentum is front articulamentum and back side articulamentum, and the first electrode layer is anode electrode layer；Front conductting layer 2 is conduction
The low-resistance region of model p-type；The front articulamentum is the high concentration region that conductivity model is p-type, the company of the front articulamentum
3 one end of junctor is embedded in inside N-type barrier layer 4, and the other end is connect in barrier layer top surface with front conductting layer 2；Barrier layer 4 is conduction
The high resistance area of model N-type；The back side articulamentum is the high concentration region that conductivity model is N-type, the connector 5 of back side articulamentum
One end is embedded in inside N-type barrier layer 4, and the other end is connect in the bottom surface of barrier layer with conductting layer 6；Backside layer 6 is conductivity type
Number be N-type low-resistance region；The second electrode lay is negative electrode layer.
6. special according to claim 1 to a kind of any one of 5 fast recovery diode structures based on 3 D semiconductor wafer
Sign is that the connector is prismatic, cylindrical, round or ellipse structure.
7. special according to claim 1 to a kind of any one of 5 fast recovery diode structures based on 3 D semiconductor wafer
Sign is that circle is successively integrally formed in the first electrode layer, front conductting layer, barrier layer, backside layer and the second electrode lay
Column construction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910497593.XA CN110112209B (en) | 2019-06-10 | Fast recovery diode structure based on three-dimensional semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910497593.XA CN110112209B (en) | 2019-06-10 | Fast recovery diode structure based on three-dimensional semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110112209A true CN110112209A (en) | 2019-08-09 |
| CN110112209B CN110112209B (en) | 2024-08-13 |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6218683B1 (en) * | 1998-06-01 | 2001-04-17 | Mitsubishi Denki Kabushiki Kaisha | Diode |
| JP2002314099A (en) * | 2001-04-09 | 2002-10-25 | Denso Corp | Schottky diode and its manufacturing method |
| JP2007081448A (en) * | 2006-12-25 | 2007-03-29 | Fuji Electric Device Technology Co Ltd | Super-junction semiconductor element |
| CN103872147A (en) * | 2012-12-18 | 2014-06-18 | 现代自动车株式会社 | Schottky barrier diode and method of manufacturing the same |
| CN104037235A (en) * | 2014-06-12 | 2014-09-10 | 西安理工大学 | Rapid soft recovery power switching diode and manufacture method thereof |
| CN108574016A (en) * | 2018-04-13 | 2018-09-25 | 华中科技大学 | A kind of the silicon carbide DSRD devices and Pulsed power generator of super-junction structure |
| CN210272367U (en) * | 2019-06-10 | 2020-04-07 | 洛阳鸿泰半导体有限公司 | Fast recovery diode structure based on three-dimensional semiconductor wafer |
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6218683B1 (en) * | 1998-06-01 | 2001-04-17 | Mitsubishi Denki Kabushiki Kaisha | Diode |
| JP2002314099A (en) * | 2001-04-09 | 2002-10-25 | Denso Corp | Schottky diode and its manufacturing method |
| JP2007081448A (en) * | 2006-12-25 | 2007-03-29 | Fuji Electric Device Technology Co Ltd | Super-junction semiconductor element |
| CN103872147A (en) * | 2012-12-18 | 2014-06-18 | 现代自动车株式会社 | Schottky barrier diode and method of manufacturing the same |
| CN104037235A (en) * | 2014-06-12 | 2014-09-10 | 西安理工大学 | Rapid soft recovery power switching diode and manufacture method thereof |
| CN108574016A (en) * | 2018-04-13 | 2018-09-25 | 华中科技大学 | A kind of the silicon carbide DSRD devices and Pulsed power generator of super-junction structure |
| CN210272367U (en) * | 2019-06-10 | 2020-04-07 | 洛阳鸿泰半导体有限公司 | Fast recovery diode structure based on three-dimensional semiconductor wafer |
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