CN110112152A - Image Sensor with class photoconductive tube structure - Google Patents
Image Sensor with class photoconductive tube structure Download PDFInfo
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- CN110112152A CN110112152A CN201810154928.3A CN201810154928A CN110112152A CN 110112152 A CN110112152 A CN 110112152A CN 201810154928 A CN201810154928 A CN 201810154928A CN 110112152 A CN110112152 A CN 110112152A
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
Abstract
The present invention discloses a kind of Image Sensor with class photoconductive tube structure, it includes semiconductor substrate, multiple photoelectric conversion regions, it is set in semiconductor substrate, in a dielectric lamination and multiple optical isolation wall constructions setting dielectric lamination, every one dielectric layer includes the optical isolation wall construction for corresponding to photoelectric conversion region number, each photoelectric conversion region is surrounded by one of optical isolation wall construction, above-mentioned dielectric lamination includes one layer or more of dielectric layer, is set to substrate surface and covers multiple photoelectric conversion regions.
Description
Technical field
The present invention relates to a kind of Image Sensor, more particularly to a kind of Image Sensor with photoconductive tube structure, and
Its forming method.
Background technique
Image Sensor is widely used in consumer electrical product, such as smartphone, digital camera, notes type
Computer etc..General Image Sensor is using complementary metal-oxide half field effect transistor (complementary
metal-oxide-semiconductor；CMOS) technology or Charged Couple sensing device (charge-coupled
device；CCD) technology is made on semiconductor substrate.Image Sensor may include a video sensing pixel array, each
A pixel includes a light sensitive diode (photodiode) and other operation circuits, seems transistor, is formed on substrate.
CMOS Image Sensor is compared to other technologies, because it is with low operating voltage, low energy consumption, high operation effect
Rate, can be with arbitrary access and the advantages such as compatible with current leading semiconductor manufacture craft, thus be widely used in image
Sensing element manufacture.
The principle of CMOS image sensing be incident ray is divided into the combination of several different wave length light, such as it is red, blue,
Green three primary colors, then the light sensitive diode by being located on semiconductor substrate are detected and are converted into the electric signal of different powers.
For the circuit of Image Sensor, with reference to Fig. 1 a, photoelectric conversion region PD, selection transistor SX, reset transistor RX and access
Transistor AX can correspond to each pixel of Image Sensor.Photoelectric conversion region PD may include be overlapped vertically it is multiple
Photoelectric conversion unit.Each photoelectric conversion unit includes the light sensitive diode in N-type impurity area and p type impurity area.Each turns
Shifting transistor TX includes the transfer gate that can extend on the inside of substrate.The drain electrode of each transfering transistor TX can be floating
Diffusion region FD.Floating diffusion region FD can be the source electrode of reset transistor RX.Floating diffusion region FD can be connected to selection transistor SX
Selection gate.Selection transistor SX can be connected in series with reset transistor.Selection transistor SX and access transistor AX
It can be shared by adjacent pixel and in this way, it is possible to improve the integration of Image Sensor.Its mode of operation, firstly, remaining
Charge in floating diffusion region is the drain electrode by applying supply voltage VDD to reset transistor RX when cutting off extraneous light
Drain electrode with selection transistor SX is discharged.Then, when reset transistor RX is turned off and ambient light photoelectric conversion region PD,
Electron-hole pair is generated in the PD of photoelectric conversion region.Generated hole is moved to p type impurity area to accumulate in wherein, and
Generated electronics is moved to N-type impurity area to accumulate in wherein.When transfering transistor TX is connected, accumulating electrons and hole
Electric charge transfer is to floating diffusion region FD and builds up in wherein.Since the grid bias of selection transistor SX is the amount with Accumulating charge
The current potential of proportional variation, the source electrode of selection transistor SX thus changes.Herein, it when access transistor AX is connected, reads
The signal indicated by charge.
Due to the application of current mainstream electronic product, increasingly emphasize it is light and short, thus sensing element also with this one
Demand trend needs to be miniaturized its size, but with the micromation of light sensitive diode, between pixel across interference (cross
Talk it) is consequently increased and along with the reduction of luminous sensitivity.And in response to this problem, solution, which can be, utilizes light
Conduit is aforementioned across interference to reduce.
Tradition has its structure of the Image Sensor of photoconductive tube as shown in Figure 1 b, and a dielectric layer stack 10a is formed in base
On plate 10 and the light sensitive diode 12 for being located at substrate is covered, dielectric stack lamination includes the metal interconnecting being formed in dielectric material
14 and conductive plug structure 16, photoconductive tube 18 be generally formed in the propagation road in dielectric layer stack 10a to guide incident light
Diameter.One colorful optical filter array 22 be generally formed in above dielectric layer stack 10a with provide each pixel energy sense it is a kind of specific
The light of wavelength.Multiple lenticules 24 are formed on above-mentioned colorful optical filter array 22, and light enters after lenticule 24 through by coloured silk
Colo(u)r filter 22 is incident in dielectric layer stack 10a.Traditionally, the production method of photoconductive tube is after completing above-mentioned dielectric stack
(include metal wiring structure), in the way of anisotropic etching (anisotropy etch) on light sensitive diode region shape
Funnel cross-section structure, then to deposit one layer of anti-reflecting layer 26, after then being etched again with the filling of high birefringent dielectric material 28
Opening form photoconductive tube, it is subsequent that (chemical-mechanical is planarized with chemical mechanical grinding again
planarization；CMP), it is subsequently formed subsequent colored filter, microlens structure.
But photoconductive tube structure as shown in Figure 1 b, due to needing to form very deep cross-section structure, benefit in manufacture craft
With etching mode in making above-mentioned photoconductive tube structure in dielectric layer stack, but actually it is not easy to control above-mentioned photoconductive tube structure
Required depth-to-width ratio, and even if having photoconductive tube structure as shown in Fig. 1 b, interference (cross talk) is crossed between pixel
It can still occur as Image Sensor is miniaturized, if the opticpath of dotted line in Fig. 1 b is shown, even if production is provided
Having the Image Sensor of conventional light pipes may still occur across interference, therefore also can be along with the reduction of luminous sensitivity.
For another example other prior arts, such as U.S. Patent number, US 9305952B2, disadvantage are to face the erosion of high-aspect-ratio
Quarter and uppity zanjon trench etch, and influence metal interconnecting.For another example U.S. Patent number, 7193289 B2 of US, in addition to
Except above-mentioned disadvantage, it is still necessary to face the production of side wall spacer (sidewall liner) stack layer, moulding complexity is without tool amount
Produce benefit.Therefore, it is badly in need of the structure and manufacture craft of a kind of optimization.
Summary of the invention
It is a kind of with similar photoconductive tube structure it is an object of the invention to propose in order to solve the defect of the above-mentioned prior art
Image Sensor, photoconductive tube structure can guide incident light, be lifted into the incident light quantity of optical diode.
Another object of the present invention is the photoconductive tube structure for proposing to have continuity or noncontinuity, inhibits noise and increasing
Performance.
Advantages of the present invention includes that can optimize the performance of Image Sensor, simplifies manufacture craft, and promote volume production benefit.
In view of foregoing invention purpose, the present invention proposes a kind of Image Sensor with class photoconductive tube structure comprising one
Semiconductor substrate, multiple photoelectric conversion regions are set in semiconductor substrate, a dielectric lamination and multiple optical isolation wall constructions are set
It sets in dielectric lamination, every one dielectric layer includes the optical isolation wall construction for corresponding to photoelectric conversion region number, each photoelectricity
Transition zone is surrounded by one of optical isolation wall construction.Above-mentioned dielectric lamination includes one layer or more of dielectric layer, is set to base
Plate surface simultaneously covers multiple photoelectric conversion regions.
In one embodiment, above-mentioned optical isolation wall construction has cyclic structure, and wherein cyclic structure is to form one continuously
Annular forms a discontinuous annular.One of optical isolation wall construction that every one dielectric layer includes be aligned other dielectric layers light every
From one of wall construction, and it is upper and aligned therewith one of to be located at above-mentioned multiple photoelectric conversion regions.The intraconnections of Image Sensor
Structure setting is on semiconductor substrate and in dielectric lamination.The optical isolation wall construction of every one dielectric layer is able to height and blocks whole
Or part internal connection-wire structure.Image Sensor configures multiple chromatic filter layers, respectively on the above-mentioned multiple photoelectric conversion regions in position simultaneously
It is aligned therewith.It is upper and aligned therewith to be located at one of multiple chromatic filter layers for multiple lenticules.Internal connection-wire structure includes, but
It is not limited to directly to intraconnections, lateral intraconnections and/or contact perforation, conductive plug.
Detailed description of the invention
The schematic diagram of detailed description of the present invention and embodiment as described below should make the present invention more by abundant geographical
Solution；However, it should thus be appreciated that this is only limitted to as a reference for understanding the application of the present invention, be not intended to limit the present invention in a specific embodiment
Among.
Fig. 1 a is the driving circuit figure of an exemplary Image Sensor；
Fig. 1 b is the structural schematic diagram for the Image Sensor that tradition has photoconductive tube；
Fig. 2 a~Fig. 2 g is that the present invention forms the production with the Image Sensor of class photoconductive tube structure in an embodiment
Processing step schematic diagram；
Fig. 3 is present invention OPTICAL SENSORS structural schematic diagram with class photoconductive tube formed in an embodiment；
Fig. 4 a~Fig. 4 g is that the present invention forms the system with the Image Sensor of class photoconductive tube structure in another embodiment
Make technique step schematic diagram；
Fig. 5 is that another embodiment of the present invention is formed by the OPTICAL SENSORS structural schematic diagram with class photoconductive tube；
Fig. 6 is the schematic top plan view that the preferred embodiment of the present invention is formed by that light completely cuts off wall construction.
Symbol description
Photoelectric conversion region PD
Selection transistor SX
Reset transistor RX
Access transistor AX
Photoelectric conversion region PD
Transfering transistor TX
Floating diffusion region FD
Supply voltage VDD
Substrate 10
Dielectric layer stack 10a
Light sensitive diode 12
Metal interconnecting 14
Conductive plug structure 16
Photoconductive tube 18
Colorful optical filter array 22
Lenticule 24
Anti-reflecting layer 26
High birefringent dielectric material 28
Class photoconductive tube 30
Substrate 100
Photosensitive element 102
Isolation structure 104
Transfer gate (transistor gate；Tx)106
First interlayer dielectric layer 108
Second interlayer dielectric layer 208
Third interlayer dielectric layer 308
4th interlayer dielectric layer 408
First conductive through holes 110
First light completely cuts off wall (light shield wall) aperture 112
First conductive plug 110a
First light completely cuts off wall (light shield wall) structure 112a
First metal interconnecting 114
Element intraconnections 20
Second conductive through holes 210
Second conductive plug 210a
Second light completely cuts off wall construction 212a
Second metal interconnecting 214
Third conductive plug 310a
Third light completely cuts off wall construction 312a
Third metal interconnecting 314
4th light completely cuts off wall construction 412a
Chromatic filter layer 501
Light-transmitting insulating layer 508
Optically focused lenticule 603
First dielectric covering layer 1081
Second dielectric covering layer 1083
Third dielectric covering layer 1085
The gate electrode 606 of conversioning transistor
Complete annular region 612a
Divide section 6120a
Specific embodiment
The present invention will be described in detail for invention specific embodiment and its viewpoint herein, such to be described as explaining this hair
Bright structure or steps flow chart is to be provided with the use of explanation rather than to limit claim of the invention.Therefore, specification is removed
In specific embodiment and being preferably implemented make an exception, the present invention can also be performed in extensively in other different embodiments.Below by way of
Particular specific embodiment illustrates embodiments of the present invention, and those skilled in the art can be by disclosed in the present specification interior
Hold and understands effect and its advantage of the invention easily.And the present invention can also be used by other specific embodiments and reality
Apply, every details that this specification is illustrated may be based on different demands and apply, and without departing from the spirit of the present invention into
The a variety of different modifications of row or change.
There is the Image Sensor of photoconductive tube based on tradition mentioned above, due to there is it difficult in its manufacture craft and
Uncontrollable missing, the present invention propose a kind of structure of new photoconductive tube Image Sensor.
It is that the present invention forms the Image Sensor with class photoconductive tube structure in an embodiment with reference to Fig. 2 a~Fig. 2 g
Structure and manufacturing process steps schematic diagram.
According to the present embodiment, as shown in Figure 2 a, a substrate 100 is provided first, wherein substrate 100 can be semiconductor-based
Bottom, such as a silicon base, extension silicon base, silicon-Germanium base, silicon carbide substrate or insulating layer cover silicon (silicon-on-
insulator；SOI), but not limited to this.Then multiple photosensitive elements 102 are formed close to its surface in substrate 100, such as
Light sensitive diode comprising N-type impurity area and p type impurity area, it acts as photoelectric conversion, and the property of can choose in substrate 100
Multiple complementary metal-oxide field effect (CMOS) transistor (not shown)s are defined and are formed, N-type impurity area and p type impurity area can
It is formed using ion implantation self-evident.Multiple isolation structures 104 are surrounded on around photosensitive element 102 and transistor, are used
To avoid the element short in substrate 100.Isolation structure 104 can use fleet plough groove isolation structure or zone oxidation isolation junction
Structure or the modes such as other similar make, this right non-present invention emphasis thus do not repeat.
Then intraconnections manufacture craft needed for carrying out element operation, that is, pattern is sequentially formed in the way of Lithography Etching
Change grid layer 106, such as transfer gate (the transistor gate of transfering transistor；Tx) 106, to control photosensitive element
Electric charge transfer in 102.Then the first interlayer dielectric layer (interlayer dielectric layer) 108 is deposited in substrate
On 100 and cover the transfer gate 106 of CMOS transistor, each light sensitive diode 102 and transfering transistor, above-mentioned first
All kinds of known sedimentations, which can be used, in interlayer dielectric layer 108 implements, and can use chemical vapour deposition technique in one embodiment, and first
Interlayer dielectric layer 108 can adopt oxide, nitride or nitrogen oxides etc., can for another example adopt silica boron, phosphosilicate glass, fluorination
The silica or similar material of silicate glass, doped carbon, but not limited to this, and above is the purpose illustrated, non-to limit
The fixed present invention.
Intraconnections manufacture craft needed for then carrying out sequentially is formed the first conduction of patterning in the way of Lithography Etching and worn
Hole 110, then removes photoresist.Photoresist is used to 100 surface specific region of protecting group bottom from being etched, later
Removed from 108 surface of the first interlayer dielectric layer, removal process ensure it is complete it is errorless retain predetermined pattern, and do not injure substrate 100
Other regions, by photoresist and residue removal in character shape environs.It can usually be removed using wet type or dry type
Method is reached, this right non-present invention emphasis thus do not repeat.
With reference to Fig. 2 b, then with another photoetching process (utilizing another road photomask) in each light sensitive diode
Surrounding forms patterning, this completely cuts off wall (light shield wall) aperture 112 for the first light, then removes photoresist.
Then deposited metal and using chemical mechanical grinding planarization (CMP) planarized, be formed simultaneously as included in Fig. 2 c
First conductive plug 110a and light isolation wall (light shield wall) structure 112a, the first conductive plug 110a are general
Such as be made of metal or alloy, be exemplified as with metal tungsten, aluminium, titanium, tantalum, copper or more than any combination.It is subsequent again with
Chemical mechanical grinding planarization (CMP) is planarized, and is formed the first light and is completely cut off the top view of wall construction 112a for Yu Houxu
Fig. 6 and its explanation in be discussed in detail.
Then the first metal interconnecting 114, cross-section structure such as Fig. 2 d institute are formed with another road photoetching process
Show, production is comprising going photoresist program self-evident.Then as shown in Figure 2 e, the second interlayer dielectric layer 208 is deposited,
Above-mentioned light completely cuts off on wall construction 112a and the first metal interconnecting 114, completely cuts off wall containing metal interconnecting and light as subsequent
Insulating layer, all kinds of known sedimentations, which can be used, in the second above-mentioned interlayer dielectric layer 208 implements, and can use in one embodiment
Chemical vapour deposition technique, the second interlayer dielectric layer 208 can adopt oxide, nitride or nitrogen oxides etc., and above is citing,
It is non-to limit the present invention.
Then it defines the second conductive through holes 210 simultaneously with one photomask and the second light isolation wall perforates 212, due to the
Two light isolation wall perforation 212 must from top to bottom extend to the position of 114 mid-height of at least the first metal interconnecting, to reach
To preferable light isolation effect, therefore it is also ensured that the second conductive through holes 210 after etching can touch in the first metal
Line 114.Then deposited metal, for example, tungsten, aluminium, titanium, tantalum, copper or more than any combination.It is subsequent again with chemical mechanical grinding
Planarization (CMP) is planarized, and structure as shown in figure 2f is formed, and is completely cut off comprising the second conductive plug 210a and the second light
Wall (light shield wall) structure 212a.The third that additionally stacks, the 4th interlayer dielectric layer 308,408, in third metal
Line 314, third conductive plug 310a and third, the isolation of the 4th light wall construction 312a, 412a can be via the above-mentioned systems of repetition
Make processing step and is formed.Known this field operator it is found that formed number of plies end depending on demand, not to limit this hair
It is bright.
With reference to Fig. 2 g, the light isolation wall construction 412a of top layer can be formed in using metal filling, chemical mechanical milling method
In above-mentioned 4th interlayer dielectric layer 408, the step as described in Fig. 2 b is formed.The material of dielectric layer and interlayer dielectric layer may include
Such as oxide, nitride, nitrogen oxides, for another example silica boron, phosphosilicate glass, fluorinated silicate glass, doped carbon oxygen
SiClx or similar material, but not limited to this, and above is the purpose illustrated, non-to limit the present invention.
Referring again to Fig. 2 g, it is the laminated construction comprising element intraconnections 20 and class photoconductive tube 30, wherein connects in element
Line 20 is each layer metal interconnecting 114,214,314 and each layer conductive plug 110a, 210a, 310a institute group by different stack layers
At class photoconductive tube 30 is made of light isolation wall construction 112a, 212a, 312a, 412a of different stack layers.
Then it deposits a light-transmitting insulating layer 508 and is covered in the above-mentioned isolation of top layer's light wall construction 412a, the 4th dielectric lamination
408 and internal connection-wire structure 20 on, then on light-transmitting insulating layer 508 formed different colours chromatic filter layer 501, colorized optical filtering
Layer may include coloured photoresist pattern, and can make of lithographic fabrication process.Chromatic filter layer 501 can wrap
The filter for including red green or blue, allows photosensitive element to sense the light of particular color.Then in each colour
Optically focused lenticule 603 is formed on filter layer, covers the class photoconductive tube 30 and photosensitive element 102 being disposed below.It is formed complete
OPTICAL SENSORS structure with class photoconductive tube is as shown in Figure 3.
With reference to Fig. 4 a~Fig. 4 g, the image sensing with class photoconductive tube structure is formed in another embodiment for the present invention
The manufacture craft schematic diagram of device.
According to the present embodiment, as shown in fig. 4 a, a substrate 100 is provided first, wherein substrate 100 can be semiconductor-based
Bottom, such as a silicon base, extension silicon base, silicon-Germanium base, silicon carbide substrate or insulating layer cover silicon (silicon-on-
insulator；SOI), but not limited to this.Then multiple photosensitive elements 102 are formed close to its surface in substrate, such as wrapped
On containing N type impurity range and the light sensitive diode in p type impurity area, N-type impurity area and p type impurity area can use ion implantation shape
At it acts as the definition of the property of can choose in photoelectric conversion and substrate 100 and the multiple complementary metal-oxide fields effects of formation
(CMOS) transistor (not shown) and multiple isolation structures 104 are surrounded on around photosensitive element 102 and transistor, to keep away
Exempt from the element short in substrate.Isolation structure 104 can be using shallow ditch groove structure or zone oxidation isolation structure or other classes
Made like mode, this right non-present invention emphasis thus do not repeat.
Then required intraconnections manufacture craft is carried out, that is, sequentially forms patterned gate in the way of Lithography Etching
106, such as transfer gate (the transistor gate of transfering transistor；Tx), turn to control the charge of photosensitive element 102
It moves.Then the first interlayer dielectric layer (interlayer dielectric layer) 108 is deposited in substrate 100 and covering
Transfer gate (the transistor gate of CMOS transistor, each light sensitive diode 102 and transfering transistor；Tx) 106,
The first above-mentioned interlayer dielectric layer 108 can be implemented using all kinds of known sedimentations, in one embodiment can be using chemical gas
Phase sedimentation, dielectric layer 108 can adopt oxide, nitride or nitrogen oxides etc., can for another example adopt silica boron, phosphosilicate glass
Glass, fluorinated silicate glass, doped carbon silica or similar material, but not limited to this, above be citing purpose, it is non-
To limit the present invention.
Then with another photoetching process (utilizing another road photomask) in each 102 surrounding shape of light sensitive diode
Then photoresist is removed at light isolation wall (light shield wall) pattern, deposited metal layer and subsequent again to change
It learns mechanical polishing/planarization (CMP) to be planarized, forms the light in Fig. 4 b such as and completely cut off wall construction 112a.Formed light completely cuts off wall
The top view of structure 110a will illustrate in Fig. 6.Then as illustrated in fig. 4 c, one layer of first dielectric covering layer 1081 is deposited, in covering
Light isolation wall 112a and the first interlayer dielectric layer 108 are stated, the first above-mentioned dielectric covering layer 1081 can be using all kinds of known heavy
Area method is implemented, and can use chemical vapour deposition technique in one embodiment, and the first dielectric covering layer 1081 can adopt oxide, nitridation
Object or nitrogen oxides etc., then as shown in figure 4d, subsequent recycling photoetching process pattern the first conductive plug
110a, the first conductive plug 110a be usually be made of metal or alloy, with metal such as tungsten, aluminium, titanium, tantalum or copper or with
On any combination.It is subsequent to be planarized again with chemical mechanical grinding, form the contact of interlayer dielectric layer metal.
Then as shown in fig 4e, first shift to form the first metal interconnecting 114 with Lithography Etching and pattern, then deposit
One layer of second interlayer dielectric layer (interlayer dielectric layer) 208 is covered in the first metal interconnecting 114 and
On one dielectric covering layer 1081, the second above-mentioned interlayer dielectric layer 208 can use chemical vapour deposition technique, recycle photoengraving
Carve manufacture craft in formed light isolation wall construction 112a on formed the second light isolation wall construction pattern, then remove photoresist
Agent, deposited metal layer, for example, tungsten, aluminium, titanium, tantalum or copper or more than any combination and subsequent flat with chemical mechanical grinding again
Smoothization (CMP) carries out planarization and forms the second light isolation wall construction 212a, then deposits in the covering of the second dielectric covering layer 1083
State the second light isolation wall construction 212a on, the second above-mentioned interlayer dielectric layer 208 can use chemical vapour deposition technique, it is subsequent again
Using photoetching process pattern the second conductive through holes 210, removal photoresist, deposited metal, such as tungsten, aluminium,
Titanium, tantalum or copper or more than any combination, planarized again with chemical mechanical grinding, formed the second conductive plug 210a and with
The contact of first metal interconnecting 114, structure is as shown in fig 4e.
In the structure such as Fig. 4 e, the step of repetition as shown in figure 4d, shift to form second with Lithography Etching and pattern
Metal interconnecting 214 then deposits one layer of third interlayer dielectric layer (interlayer dielectric layer) 308 in the
On two metal interconnectings 214 and the second dielectric covering layer 1083, recycle photoetching process in established second light
Third light isolation wall construction pattern is formed on isolation wall construction 212a, then removes photoresist, deposited metal layer, Yi Jihou
Continue planarize with chemical mechanical grinding planarization (CMP) again and form third light isolation wall construction 312a, then deposits third
Dielectric covering layer 1085 covers on above-mentioned third light isolation wall construction 312a, and above-mentioned third interlayer dielectric layer 308 can use
Chemical vapour deposition technique, subsequent recycling photoetching process patterning third conductive through holes 310, removal photoresist
Agent, deposited metal, for example, tungsten, aluminium, titanium, tantalum or copper or more than any combination, planarized again with chemical mechanical grinding, formed
Third conductive plug 310a and contacted with the second metal interconnecting 214, it can obtain another layer include light isolation wall 312a,
The dielectric lamination of metal interconnecting 214 and conductive plug 310a structure, structure is as shown in Fig. 4 f.
Similarly, on the basis of the structure as shown in Fig. 4 f, the step as described in Fig. 4 a~Fig. 4 c is repeated
To obtain as shown in Fig. 4 g comprising the 4th interlayer dielectric layer 408, third metal interconnecting 314 and the 4th light isolation wall 412a
Structure.Referring again to Fig. 4 g, the dielectric lamination structure comprising element intraconnections 20 and class photoconductive tube 30 is shown, wherein member
Part intraconnections 20 is the metal interconnecting 114,214,314 and conductive plug 110a, 210a, 310a institute group by different stack layers
At class photoconductive tube 30 is made of light isolation wall construction 112a, 212a, 312a, 412a of different stack layers.Dielectric layer, layer
Between the material of dielectric layer and dielectric covering layer may include such as silica boron, phosphosilicate glass, fluorinated silicate glass, mix
The silica or similar material of miscellaneous carbon, but not limited to this.
Then as shown in figure 5, it includes element intraconnections 20 and class photoconductive tube that one light-transmitting insulating layer 508 of deposition, which is covered in above-mentioned,
In 30 dielectric lamination structure, then in the chromatic filter layer 501 for forming different colours on light-transmitting insulating layer 508, colorized optical filtering
Layer 501 may include coloured photoresist pattern, and can make of lithographic fabrication process.Chromatic filter layer can wrap
The filter for including red green or blue, allows photosensitive element 102 to sense the light of particular color.Then in each coloured silk
Optically focused lenticule 603 is formed on color filtering optical layer, covers the class photoconductive tube 30 and photosensitive element 102 being disposed below.
The benefit of this structure is the dielectric covering layer that each dielectric lamination unit is additionally added via one and volume together
Outer manufacture craft, which is formed by, increases light isolation wall construction, this structure will form the photoconductive tube for having more complete clad structure, make
The chance across interference (cross talk) between Image Sensor pixel minimizes.
Fig. 6 is the top view that the preferred embodiment of the present invention is formed by that light completely cuts off wall construction.Please also refer to Fig. 2 a~
Fig. 5, in above-mentioned diagram and description has described how to stack in each and has formed intraconnections, conductive plugs in dielectric layer
The section diagram of plug and light isolation wall construction.Fig. 6 is to stack the light formed in dielectric layer in each to completely cut off bowing for wall construction
View stacks in each and forms complete annular region 612a in dielectric stack lamination or formed by multiple segmentation section 6120a
Discontinuous annular section 612a is around on photoelectric conversion region PD, such as photosensitive element region.The wherein grid of conversioning transistor
Electrode 606, which is located above the PD of photoelectric conversion region, to partly overlap with it for transfer charge, it is above-mentioned by complete annular region 612a or
Photoelectric conversion region PD and conversioning transistor are formed at by the discontinuous annular section 612a that multiple segmentation section 6120a are formed
The top of gate electrode 606.As with reference to shown in Fig. 2 a~Fig. 5, class photoconductive tube 30 therein is i.e. by several stacking dielectric layers
Complete annular or discontinuous ring-shaped light isolation wall construction stack out.Based on above-mentioned structure feature, light completely cuts off wall construction can shape
It is acted at similar photoconductive tube, can effectively guide incident light and enter in light sensitive diode, and light completely cuts off the maskable interior company of wall construction
Line can inhibit the generation of interference.
It is above-mentioned to be stated as the preferred embodiment of the present invention.Deserved those skilled in the art to understand it are to illustrate this
The claim invented rather than advocated to limit the present invention.Its scope of patent protection is worked as with the appended claims and its is waited
Depending on same domain.All persons skilled in the art are not departing from this patent spirit or scope, made change or profit
Decorations belong to the lower equivalent change or design completed of disclosed spirit, and should be included in the appended claims.
Claims (10)
1. a kind of Image Sensor with photoconductive tube structure, characterized by comprising:
Semiconductor substrate；
Multiple photoelectric conversion regions are set in the semiconductor substrate；
Dielectric lamination is set on the semiconductor substrate comprising one layer or more of dielectric layer, and covers multiple photoelectric conversion region；
And
Multiple optical isolation wall constructions, are arranged in the dielectric lamination, and each layer dielectric lamination includes at least one optical isolation wall knot
Structure, multiple photoelectric conversion region are surrounded by multiple optical isolation wall construction.
2. as described in claim 1 with the Image Sensor of photoconductive tube structure, wherein above-mentioned optical isolation wall construction is bowed
It include cyclic structure depending on section.
3. as described in claim 2 with the Image Sensor of photoconductive tube structure, wherein above-mentioned cyclic structure is to be formed
One continuous circular shape.
4. as described in claim 2 with the Image Sensor of photoconductive tube structure, wherein above-mentioned cyclic structure is to be formed
One discontinuous annular.
5. as described in claim 1 with the Image Sensor of photoconductive tube structure, wherein in each layer dielectric lamination
The optical isolation wall construction can block all or part of intraconnections.
6. as described in claim 1 with the Image Sensor of photoconductive tube structure, further includes:
It is upper and aligned therewith to be located at one of above-mentioned multiple photoelectric conversion regions for multiple chromatic filter layers；And
It is upper and aligned therewith to be located at one of multiple chromatic filter layer for multiple lenticules.
7. a kind of Image Sensor with photoconductive tube structure, characterized by comprising:
Semiconductor substrate；
Multiple photoelectric conversion regions are set in the semiconductor substrate；
First interlayer dielectric layer is set on the semiconductor substrate, and covers multiple photoelectric conversion region, wherein first interlayer
Dielectric layer includes the first optical isolation wall construction；And
Second interlayer dielectric layer is set on first interlayer dielectric layer, wherein second interlayer dielectric layer include the second light every
From wall construction.
8. as described in claim 7 with the Image Sensor of photoconductive tube structure, wherein above-mentioned optical isolation wall construction is bowed
It include cyclic structure depending on section.
9. as described in claim 7 with the Image Sensor of photoconductive tube structure, wherein above-mentioned cyclic structure is to be formed
One continuous circular shape.
10. as described in claim 7 with the Image Sensor of photoconductive tube structure, wherein above-mentioned cyclic structure is to be formed
One discontinuous annular.
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| TW107103674A TWI669811B (en) | 2018-02-01 | 2018-02-01 | Image sensors with light pipe-alike |
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| CN103000647A (en) * | 2012-10-25 | 2013-03-27 | 上海集成电路研发中心有限公司 | Optical enhancement structure of CMOS (complementary metal oxide semiconductor transistor) image sensor and method for manufacturing optical enhancement structure |
| CN105810701A (en) * | 2015-01-16 | 2016-07-27 | Pgi股份有限公司 | Optical sensor with light-guiding feature |
| US9496309B2 (en) * | 2014-03-28 | 2016-11-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor device |
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| JP2006120845A (en) * | 2004-10-21 | 2006-05-11 | Canon Inc | Photoelectric converter and its manufacturing method |
| US7193289B2 (en) * | 2004-11-30 | 2007-03-20 | International Business Machines Corporation | Damascene copper wiring image sensor |
| JP5076679B2 (en) * | 2007-06-28 | 2012-11-21 | ソニー株式会社 | Solid-state imaging device and camera module |
| JP5241902B2 (en) * | 2011-02-09 | 2013-07-17 | キヤノン株式会社 | Manufacturing method of semiconductor device |
| TWI572024B (en) * | 2015-07-06 | 2017-02-21 | 力晶科技股份有限公司 | Semiconductor device and method of manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103000647A (en) * | 2012-10-25 | 2013-03-27 | 上海集成电路研发中心有限公司 | Optical enhancement structure of CMOS (complementary metal oxide semiconductor transistor) image sensor and method for manufacturing optical enhancement structure |
| US9496309B2 (en) * | 2014-03-28 | 2016-11-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor device |
| CN105810701A (en) * | 2015-01-16 | 2016-07-27 | Pgi股份有限公司 | Optical sensor with light-guiding feature |
| CN106409848A (en) * | 2015-07-30 | 2017-02-15 | 力晶科技股份有限公司 | Image sensor |
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