CN110112079A - The etch process parameters evaluation method of step sample block - Google Patents
The etch process parameters evaluation method of step sample block Download PDFInfo
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- CN110112079A CN110112079A CN201910353879.0A CN201910353879A CN110112079A CN 110112079 A CN110112079 A CN 110112079A CN 201910353879 A CN201910353879 A CN 201910353879A CN 110112079 A CN110112079 A CN 110112079A
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- sample block
- step sample
- process parameters
- etch process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
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Abstract
The present invention provides a kind of etch process parameters evaluation methods of step sample block, belong to semiconducter device testing technical field, the height d including calculating step sample block；Calculate the outside dimension a and inside dimension b of step sample block；Calculate the side tiltangleθ of step sample block；Setup parameter ε evaluates etching technics level, utilizes the relational expression calculating parameter ε of parameter and step side inclination angle.The etch process parameters evaluation method of step sample block provided by the invention, can accurately measure step sample block height and interior outside dimension, and then determine step sample block side inclination angle, accurate evaluation carried out to the etching technics level of step sample block.
Description
Technical field
The invention belongs to semiconducter device testing technical fields, are to be related to a kind of etching of step sample block more specifically
Technological parameter evaluation method.
Background technique
In integrated circuit and MEMS technology manufacturing field, there are a large amount of geometric sense technological parameters, and wherein step parameter is straight
Connect the performance for influencing entire semiconductor devices.Thereby it is ensured that the measurement accuracy of step structure, to the spy of reduction semiconductor devices
Sign parameter has important role.Currently, the main method of measurement step is contact type measurement and non-contact measurement.Contact
Measurement accuracy is high, and measurement range is small, be easy to cause ledge surface scratch.In semiconductor process line, step instrument is as contact
The key instrument of formula measurement method is widely used in the measurement of step.
In order to guarantee the accuracy of step height measurement quasi-instrument, domestic and international metrological service is using standard step height sample block come school
Quasi- instrument.Semiconductor etching process is generallyd use to develop standard step height sample block.By scan image it is found that step sample block
Trapezium structure is showed, in the development process of sample block, due to the limitation of etching technics, although step can be accurately controlled
Height dimension but it cannot be guaranteed that the complete vertical etch of step side goes down, and then influences the calibration accuracy of sample block.
Summary of the invention
The purpose of the present invention is to provide a kind of etch process parameters evaluation methods of step sample block, are able to solve existing skill
Step sample block present in art etches the technical issues of poor accuracy.
To achieve the above object, the technical solution adopted by the present invention is that: a kind of etch process parameters of step sample block are provided
Evaluation method, comprising:
Calculate the height d of step sample block；
Calculate the outside dimension a and inside dimension b of step sample block；
Calculate the side tiltangleθ of step sample block；
Setup parameter ε evaluates etching technics level, the relationship such as formula (1) of the parameter and step side inclination angle；
ε=sin θ (1).
Further, the height for calculating step passes through:
Step profile is scanned, step sample block is divided into tri- regions A, B and C, as survey calculation region, using each
The 1/3 of survey calculation peak width measures, the algebra that calculated result passes through the power such as the entire area in three survey calculation regions
It is obtained with the method for average value, calculation formula is such as shown in (2):
In formula:
D --- step height, unit: nm；
Ai--- Z axis displacement measurement in the A of region, unit: nm；
Bi--- Z axis displacement measurement in the B of region, unit: nm；
Ci--- Z axis displacement measurement in the C of region, unit: nm；
M --- region B measurement points；
N --- region A, C measurement points；
The width of W --- step.
Further, the outside dimension a and inside dimension b for calculating step sample block includes:
Step sample block image is acquired, step sample block image is divided into five regions L, M, N, D, E and is obtained by edge detection
Take the whole location of pixels of each zone boundary；
Find the start-stop point of the whole location of pixels in boundary；
Using axial neighborhood and difference algorithm, sub-pixel location is obtained, and then obtains the elaborate position on boundary；
The detection of boundary position is completed, the outside dimension a and inside dimension b of step sample block are calculated.
Further, the side tiltangleθ of the step sample block is obtained by calculation, and calculation formula is such as shown in (3)
In formula:
θ --- step sample block side inclination angle, unit: rad；
D --- the height of step sample block, unit: nm；
A --- the outside dimension of step sample block, unit: nm；
B --- the inside dimension of step sample block, unit: nm.
Further, the step sample block image is obtained using SEM acquisition.
Further, the height of the step sample block is obtained by step instrument probe scanning.
The beneficial effect of the etch process parameters evaluation method of step sample block provided by the invention is: by calculating step
Sample block side inclination angle, and then the method for evaluating etching technics level.Firstly, calculating the height of step sample block；Secondly, calculating
The interior outside dimension of step sample block；Then, it is tilted by the side that the height and interior outside dimension of step sample block calculate step sample block
Angle, finally, one parameter related with side inclination angle of setting, evaluates the level of etching technics.The technological parameter is not only intuitive
Simply, it is easy to obtain, and can accurately, objectively reflect that the up rightness of sample block side and etching technics are horizontal.
Detailed description of the invention
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to embodiment or description of the prior art
Needed in attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description is only of the invention some
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is the schematic perspective view of step sample block provided in an embodiment of the present invention；
Fig. 2 is the planar structure schematic diagram of step sample block provided in an embodiment of the present invention；
Fig. 3 is the structural schematic diagram provided in an embodiment of the present invention for calculating step sample block height；
Fig. 4 is the step sample block image of acquisition provided in an embodiment of the present invention；
Fig. 5 is axial neighborhood and difference algorithm schematic diagram provided in an embodiment of the present invention；
Fig. 6 is axial neighborhood and difference algorithm flow chart provided in an embodiment of the present invention.
Specific embodiment
In order to which technical problems, technical solutions and advantages to be solved are more clearly understood, tie below
Accompanying drawings and embodiments are closed, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only
To explain the present invention, it is not intended to limit the present invention.
Also referring to Fig. 1 and Fig. 2, now the etch process parameters evaluation method of step sample block provided by the invention is carried out
Explanation.The etch process parameters evaluation method of the step sample block, the height d including calculating step sample block；
Calculate the outside dimension a and inside dimension b of step sample block；
Calculate the side tiltangleθ of step sample block；
Setup parameter ε evaluates etching technics level, the relationship such as formula (1) of the parameter and step side inclination angle；
ε=sin θ (1).
The etch process parameters evaluation method of step sample block provided by the invention, firstly, calculating the height of step sample block；Its
It is secondary, calculate the interior outside dimension of step sample block；Then, step sample block is calculated by the height and interior outside dimension of step sample block
Side inclination angle, finally, one parameter related with side inclination angle of setting, evaluates the level of etching technics.
According to formula (1), when parameter ε is intended to 1, illustrate that the side inclination angle of step sample block close to 90 °, illustrates to etch
Effect is preferable.Conversely, parameter ε is smaller to illustrate that etching effect is poorer.The technological parameter is not only intuitive simple, is easy to obtain, and
It can accurately, objectively reflect that up rightness and the etching technics of sample block side are horizontal.
Referring to Fig. 3, a kind of specific reality of the etch process parameters evaluation method as step sample block provided by the invention
Mode is applied, the height for calculating step passes through:
Step profile is scanned, step sample block is divided into tri- regions A, B and C, as survey calculation region, using each
The 1/3 of survey calculation peak width measures, the algebra that calculated result passes through the power such as the entire area in three survey calculation regions
It is obtained with the method for average value, calculation formula is such as shown in (2):
In formula:
D --- step height, unit: nm；
Ai--- Z axis displacement measurement in the A of region, unit: nm；
Bi--- Z axis displacement measurement in the B of region, unit: nm；
Ci--- Z axis displacement measurement in the C of region, unit: nm；
M --- region B measurement points；
N --- region A, C measurement points；
The width of W --- step.
Fig. 2, Fig. 4 and Fig. 6 are please referred to, one of the etch process parameters evaluation method as step sample block provided by the invention
Kind specific embodiment, the outside dimension a and inside dimension b for calculating step sample block include:
Step sample block image is acquired, step sample block image is divided into five regions L, M, N, D, E and is obtained by edge detection
Take the whole location of pixels of each zone boundary；
Find the start-stop point of the whole location of pixels in boundary；
Using axial neighborhood and difference algorithm, sub-pixel location is obtained, and then obtains the elaborate position on boundary；
The detection of boundary position is completed, the outside dimension a and inside dimension b of step sample block are calculated.
In the present invention, a represents the outside dimension of step sample block, the i.e. width on trapezium structure bottom edge, and b represents the interior of step sample block
Size, the i.e. width of trapezium structure top margin.Since step sample block size is in micro-nano magnitude, step sample is acquired using SEM
Block image.As shown in figure 4, step sample block image is divided into five regions L, M, N, D, E, wherein the edge threshold of region L and M, E and D
Value changes greatly, and is easy detection marginal position.In contrast, the edge threshold variation of region M and N, N and D are smaller, not suitable for detection
To marginal position.In order to improve edge detection precision, the marginal position of step sample block is detected using axial neighborhood and poor method.
As shown in figure 5, by taking the boundary of region L and M as an example, if the gray value of region L is G1, the gray value of region M is G2,
The whole pixel coordinate of boundary position is (i'e,j'e), and actual marginal point is in pixel coordinate (i'e,j'e) left side u position
It sets, and | u | < 1 i.e. less than the size of a pixel.Wherein, p rank axial direction neighborhood and difference, as shown in formula (2).
By formula (2), first three rank axial direction neighborhood and difference of marginal point are found out, and then calculates u, G1、G2Value, obtain Asia
Pixel edge position.
A kind of specific embodiment of etch process parameters evaluation method as step sample block provided by the invention, it is described
The side tiltangleθ of step sample block is obtained by calculation, and calculation formula is such as shown in (3)
In formula:
θ --- step sample block side inclination angle, unit: rad；
D --- the height of step sample block, unit: nm；
A --- the outside dimension of step sample block, unit: nm；
B --- the inside dimension of step sample block, unit: nm.
A kind of specific embodiment of etch process parameters evaluation method as step sample block provided by the invention, it is described
Step sample block image is obtained using scanning electron microscope SEM acquisition.
A kind of specific embodiment of etch process parameters evaluation method as step sample block provided by the invention, it is described
The height of step sample block is obtained by step instrument probe scanning.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (6)
1. the etch process parameters evaluation method of step sample block characterized by comprising
Calculate the height d of step sample block；
Calculate the outside dimension a and inside dimension b of step sample block；
Calculate the side tiltangleθ of step sample block；
Setup parameter ε evaluates etching technics level, the relationship such as formula (1) of the parameter and step side inclination angle；
ε=sin θ (1).
2. the etch process parameters evaluation method of step sample block as described in claim 1, which is characterized in that the calculating step
Height pass through:
Step profile is scanned, step sample block is divided into tri- regions A, B and C, as survey calculation region, using each measurement
The 1/3 of zoning width measures, the algebra peace that calculated result passes through the power such as the entire area in three survey calculation regions
The method of mean value obtains, and calculation formula is such as shown in (2):
In formula:
D --- step height, unit: nm；
Ai--- Z axis displacement measurement in the A of region, unit: nm；
Bi--- Z axis displacement measurement in the B of region, unit: nm；
Ci--- Z axis displacement measurement in the C of region, unit: nm；
M --- region B measurement points；
N --- region A, C measurement points；
The width of W --- step.
3. the etch process parameters evaluation method of step sample block as described in claim 1, which is characterized in that the calculating step
The outside dimension a and inside dimension b of sample block include:
Step sample block image is acquired, step sample block image is divided into five regions L, M, N, D, E, by edge detection, is obtained each
The whole location of pixels of zone boundary；
Find the start-stop point of the whole location of pixels in boundary；
Using axial neighborhood and difference algorithm, sub-pixel location is obtained, and then obtains the elaborate position on boundary；
The detection of boundary position is completed, the outside dimension a and inside dimension b of step sample block are calculated.
4. the etch process parameters evaluation method of step sample block as described in any one of claims 1-3, which is characterized in that
The side tiltangleθ of the step sample block is obtained by calculation, and calculation formula is such as shown in (3)
In formula:
θ --- step sample block side inclination angle, unit: rad；
D --- the height of step sample block, unit: nm；
A --- the outside dimension of step sample block, unit: nm；
B --- the inside dimension of step sample block, unit: nm.
5. the etch process parameters evaluation method of step sample block as described in claim 1, which is characterized in that the step sample block
Image is obtained using SEM acquisition.
6. the etch process parameters evaluation method of step sample block as described in claim 1, which is characterized in that the step sample block
Height obtained by step instrument probe scanning.
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Citations (7)
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| JP2002009058A (en) * | 2000-06-26 | 2002-01-11 | Tokyo Electron Ltd | Etching method |
| CN102067289A (en) * | 2008-06-17 | 2011-05-18 | 株式会社爱发科 | Method for manufacturing multistep substrate |
| CN104101736A (en) * | 2014-08-11 | 2014-10-15 | 常州碳维纳米科技有限公司 | Preparation method for nanoscale step standard sample applied to calibration |
| CN105759080A (en) * | 2014-12-16 | 2016-07-13 | 中芯国际集成电路制造(上海)有限公司 | Step height calibration template, manufacturing method therefor, and calibration method |
| CN106017383A (en) * | 2016-06-22 | 2016-10-12 | 中国电子科技集团公司第十三研究所 | Contact-type step gauge probe detection pattern sample block |
| CN106556360A (en) * | 2015-09-24 | 2017-04-05 | 上海思信科学仪器有限公司 | A kind of step segment difference On-line Measuring Method |
| CN107658314A (en) * | 2017-08-16 | 2018-02-02 | 长江存储科技有限责任公司 | Semiconductor devices and its manufacture method |
-
2019
- 2019-04-29 CN CN201910353879.0A patent/CN110112079B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002009058A (en) * | 2000-06-26 | 2002-01-11 | Tokyo Electron Ltd | Etching method |
| CN102067289A (en) * | 2008-06-17 | 2011-05-18 | 株式会社爱发科 | Method for manufacturing multistep substrate |
| CN104101736A (en) * | 2014-08-11 | 2014-10-15 | 常州碳维纳米科技有限公司 | Preparation method for nanoscale step standard sample applied to calibration |
| CN105759080A (en) * | 2014-12-16 | 2016-07-13 | 中芯国际集成电路制造(上海)有限公司 | Step height calibration template, manufacturing method therefor, and calibration method |
| CN106556360A (en) * | 2015-09-24 | 2017-04-05 | 上海思信科学仪器有限公司 | A kind of step segment difference On-line Measuring Method |
| CN106017383A (en) * | 2016-06-22 | 2016-10-12 | 中国电子科技集团公司第十三研究所 | Contact-type step gauge probe detection pattern sample block |
| CN107658314A (en) * | 2017-08-16 | 2018-02-02 | 长江存储科技有限责任公司 | Semiconductor devices and its manufacture method |
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