CN110109296A - A kind of array substrate and liquid crystal display device - Google Patents

A kind of array substrate and liquid crystal display device Download PDF

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Publication number
CN110109296A
CN110109296A CN201910292587.0A CN201910292587A CN110109296A CN 110109296 A CN110109296 A CN 110109296A CN 201910292587 A CN201910292587 A CN 201910292587A CN 110109296 A CN110109296 A CN 110109296A
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CN
China
Prior art keywords
area
tft
thin film
film transistor
public electrode
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Pending
Application number
CN201910292587.0A
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Chinese (zh)
Inventor
董成才
周亚萍
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to CN201910292587.0A priority Critical patent/CN110109296A/en
Publication of CN110109296A publication Critical patent/CN110109296A/en
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Liquid Crystal (AREA)

Abstract

The application provides a kind of array substrate and liquid crystal display device, and array substrate includes: the scan line being set on underlay substrate and data line, and underlay substrate is correspondingly provided with the subpixel area of array distribution, and each subpixel area includes primary area and time area;Primary area thin film transistor (TFT), secondary area's thin film transistor (TFT), shared thin film transistor (TFT) and shared public electrode are provided in subpixel area.Wherein, one subpixel area corresponds to a shared public electrode, and shared public electrode is respectively connected to control terminal, control terminal provides different potentials signal for individually controlling the current potential of shared public electrode, to improve the colour cast of subpixel area corresponding to shared public electrode.

Description

A kind of array substrate and liquid crystal display device
Technical field
This application involves field of display technology more particularly to a kind of array substrate and liquid crystal display devices.
Background technique
The characteristics of VA (vertical orientation) display pattern of LCD, makes it have higher front contrast, but sees in side When examining, colour cast is also more serious, and side view contrast is decreased obviously, and the color of LCD is to combine to obtain by the brightness ratio of RGB, Colour cast is also caused by the luminance difference under different field-of-view angles, so that the drift of Υ curve under different angle of visibilities is caused, it is basic Reason is the anisotropic of liquid crystal molecule.From the point of view of the entire characteristic index of panel, RGB different color blockings, the transmission of B color blocking Rate is minimum, therefore influence of the B coloured light to panel penetrance is minimum, but B coloured light wavelength is minimum, different angle of visibilities, B coloured light brightness Variation is maximum, and partially yellow or partially blue phenomenon easily occurs at the big visual angle of white picture.
Therefore, the prior art is defective, needs to improve.
Summary of the invention
The application provides a kind of array substrate and liquid crystal display device, is able to solve the light of RGB different wave length in different views Colour cast problem caused by angular brightness is different.
To solve the above problems, technical solution provided by the present application is as follows:
The application provides a kind of array substrate, comprising:
Underlay substrate is provided with cross one another scan line and data line, the underlay substrate pair on the underlay substrate It should be equipped with the subpixel area of array distribution, each subpixel area includes primary area and time area;
Be provided in the subpixel area primary area thin film transistor (TFT), secondary area's thin film transistor (TFT), shared thin film transistor (TFT) with And shared public electrode, a shared public electrode are correspondingly connected with the primary area thin film transistor (TFT) of a subpixel area With the shared thin film transistor (TFT);
The grid and source electrode of the primary area thin film transistor (TFT) are respectively connected to the scan line and the data line, the secondary area The grid and source electrode of thin film transistor (TFT) are respectively connected to the scan line and the data line, the primary area thin film transistor (TFT) and described The drain electrode of secondary area's thin film transistor (TFT) accesses the first public electrode;The grid of the shared thin film transistor (TFT) accesses the scanning The drain electrode of line, the shared thin film transistor (TFT) is connect with the drain electrode of secondary area's thin film transistor (TFT), the shared thin film transistor (TFT) Source electrode access the shared public electrode;
Wherein, the shared public electrode is respectively connected to control terminal, and the control terminal provides different potentials signal for single The current potential of the shared public electrode is controlled, solely to improve the color of the subpixel area corresponding to the shared public electrode Partially.
In the array substrate of the application, subpixel area described in corresponding every a line is respectively arranged with the scanning Line, for the scan line between the primary area and the secondary area, corresponding each column subpixel area is provided with an institute State data line.
In the array substrate of the application, primary area liquid crystal capacitance and time area's liquid crystal electricity are additionally provided in the subpixel area Hold;
First pole plate of the primary area liquid crystal capacitance is connect with the drain electrode of the primary area thin film transistor (TFT), the primary area liquid crystal Second pole plate of capacitor is connect with first public electrode;
First pole plate of secondary area's liquid crystal capacitance is connect with the drain electrode of secondary area's thin film transistor (TFT), secondary area's liquid crystal Second pole plate of capacitor is connect with first public electrode.
In the array substrate of the application, the array substrate further include the second public electrode, the first storage capacitance of primary area, The second storage capacitance of primary area, the first storage capacitance of secondary area, the second storage capacitance of secondary area.
In the array substrate of the application, the first pole plate and the primary area film crystal of first storage capacitance of primary area The drain electrode of pipe connects, and the second pole plate of first storage capacitance of primary area is connect with second public electrode;The primary area First pole plate of two storage capacitances is connect with the source electrode of the primary area thin film transistor (TFT), and the second of second storage capacitance of primary area Pole plate is connect with the shared public electrode.
In the array substrate of the application, the first pole plate and the shared film crystal of secondary first storage capacitance of area The drain electrode of pipe connects, and the second pole plate of secondary first storage capacitance of area is connect with second public electrode;The secondary area First pole plate of two storage capacitances is connect with the source electrode of the shared thin film transistor (TFT), and the second of secondary second storage capacitance of area Pole plate is connect with the shared public electrode.
In the array substrate of the application, the current potential phase of the current potential of first public electrode and second public electrode Together.
In the array substrate of the application, the primary area and the secondary area respectively correspond to the liquid crystal molecule on four farmlands.
In the array substrate of the application, a shared public electrode is connected to the control by a signal lead End.
The application also provides a kind of liquid crystal display device including array substrate as described above.
The application's has the beneficial effect that compared to existing liquid crystal display device, array substrate provided by the present application and liquid Crystal device, by respectively corresponding the shared public electrode of setting in different subpixel region, different subpixel region is shared Public electrode can be independently controlled respectively, big by the voltage for adjusting the corresponding shared public electrode in different subpixel region It is small, Lai Gaishan different subpixel region due to different wave length light, and under different perspectives because brightness it is different caused by colour cast.This Outside, since the shared public electrode current potential in different subpixel region can be controlled individually, the application is to display device Penetrance influences smaller.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of application Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these Figure obtains other attached drawings.
Fig. 1 is the circuit diagram in array substrate respective pixel provided by the embodiments of the present application region.
Specific embodiment
The explanation of following embodiment is referred to the additional illustration, the particular implementation that can be used to implement to illustrate the application Example.The direction term that the application is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side] Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the application, rather than to Limit the application.The similar unit of structure is with being given the same reference numerals in the figure.
The application be directed to existing liquid crystal display device, there are the light of RGB different wave length different perspectives due to brightness not The technical issues of causing colour cast together, the present embodiment is able to solve the defect.
As shown in Figure 1, being the circuit diagram in array substrate respective pixel provided by the embodiments of the present application region.The array base Plate includes: underlay substrate (not indicating), and the underlay substrate includes the pixel region of array distribution, and a pixel region includes Three subpixel areas, a subpixel area are correspondingly arranged a sub-pixel.Mutual friendship is provided on the underlay substrate The multi-strip scanning line Gate and multiple data lines Data of fork and insulation set, the array substrate of the application can be 4 farmlands or 8 The design of farmland pixel, each subpixel area includes primary area and time area, for example, the primary area and the secondary area respectively correspond to four The liquid crystal molecule on a farmland.
Subpixel area described in corresponding every a line is respectively arranged with the scan line Gate, and described scan line Gate Between the primary area and the secondary area, corresponding each column subpixel area is provided with the data line Data.
The present embodiment is only illustrated by taking the circuit design of a dot structure as an example, it is to be understood that other pixels The circuit design of structure is identical as the circuit design of the dot structure.
As shown in Figure 1, being provided with primary area thin film transistor (TFT) T1, secondary area in three subpixel areas of a dot structure Thin film transistor (TFT) T2, shared thin film transistor (TFT) T3, shared public electrode Scom, primary area liquid crystal capacitance Clc1, secondary area's liquid crystal capacitance Clc2, primary area the first storage capacitance Cst11, primary area the second storage capacitance Cst12, secondary area the first storage capacitance Cst21, secondary area Two storage capacitance Cst22.In the application, the different subpixel areas respectively correspond the one shared public electrode of setting The shared public electrode Scom of Scom, the different subpixel areas can be independently controlled respectively.
The first public electrode Ccom and the second public electrode Acom are additionally provided in the array substrate, with wherein described in one It is illustrated for subpixel area.
The grid and source electrode of the primary area thin film transistor (TFT) T1 is respectively connected to the scan line Gate and the data line The drain electrode of Data, the primary area thin film transistor (TFT) T1 pass through the first storage capacitance of the primary area liquid crystal capacitance Clc1 and the primary area The mode of Cst11 parallel connection is respectively connected to the first public electrode Ccom and the second public electrode Acom.Specifically, institute The first pole plate for stating primary area liquid crystal capacitance Clc1 is connect with the drain electrode of the primary area thin film transistor (TFT) T1, the primary area liquid crystal capacitance The second pole plate of Clc1 is connect with the first public electrode Ccom;The first pole plate of the first storage capacitance of primary area Cst11 It is connect with the drain electrode of the primary area thin film transistor (TFT) T1, the second pole plate of the first storage capacitance of primary area Cst11 and described the Two public electrode Acom connections.The source electrode of the primary area thin film transistor (TFT) T1 by primary area the second storage capacitance Cst12 with The shared public electrode Scom connection;Specifically, the source electrode of the primary area thin film transistor (TFT) T1 connects the primary area second and deposits Storage holds the first pole plate of Cst12, and the second pole plate of the second storage capacitance of primary area Cst12 is connected to the shared common electrical Pole Scom.
The grid and source electrode of secondary area's thin film transistor (TFT) T2 is respectively connected to the scan line Gate and the data line The drain electrode of Data, secondary area's thin film transistor (TFT) T2 access first public electrode by secondary area's liquid crystal capacitance Clc2 Ccom, specifically, the drain electrode of secondary area's thin film transistor (TFT) T2 connect the first pole plate of secondary area's liquid crystal capacitance Clc2, described The second pole plate of secondary area's liquid crystal capacitance Clc2 connects the first public electrode Ccom.
The grid of the shared thin film transistor (TFT) T3 accesses the scan line Gate;The leakage of the shared thin film transistor (TFT) T3 Pole is connect with the drain electrode of secondary area's thin film transistor (TFT) T2, and the drain electrode passes through secondary area's liquid crystal capacitance Clc2 and described time The mode of area's the first storage capacitance Cst21 parallel connection respectively with the first public electrode Ccom and the second public electrode Acom Connection;Specifically, the drain electrode of the shared thin film transistor (TFT) T3 is connect with the first pole plate of secondary area's liquid crystal capacitance Clc2, institute The second pole plate of the area Shu Ci liquid crystal capacitance Clc2 is connect with the first public electrode Ccom;The shared thin film transistor (TFT) T3's Drain electrode is connect with the first pole plate of secondary the first storage capacitance of area Cst21, and the second of secondary the first storage capacitance of area Cst21 Pole plate is connect with the second public electrode Acom;The source electrode of the shared thin film transistor (TFT) T3 be directly accessed it is described share it is public Electrode Scom, and first pole of the source electrode of the shared thin film transistor (TFT) T3 also with secondary the second storage capacitance of area Cst22 Plate connection, the second pole plate of secondary the second storage capacitance of area Cst22 are connect with the shared public electrode Scom.
Wherein, the corresponding shared public electrode Scom of the subpixel area is respectively connected to control terminal, the control End processed provides the current potential that different potentials signal is used to individually control the shared public electrode Scom, with improve it is described share it is public The colour cast of the subpixel area corresponding to electrode Scom.
It is understood that although the first public electrode Ccom is different from the second public electrode Acom title, But usually current potential is identical both in practical liquid crystal display panel.
In one embodiment, a shared public electrode Scom is connected to the control terminal by a signal lead.
The shared thin film transistor (TFT) T3 in general 3T framework can improve visual angle by adjusting its voltage swing, but It is to lead to different perspectives luminance difference since the monochromatic wavelength of the corresponding sub-pixel of the difference subpixel area is different, To which color offset phenomenon occur.And different subpixel shares the same shared public electrode Scom current potential in general 3T framework, It is thus impossible to which the colour cast generated for the light of different subpixel is adjusted.The application passes through to each subpixel area A shared public electrode Scom is separately provided, allows to be adjusted according to the practical colour cast of the different subpixel areas generations The current potential of the corresponding shared public electrode Scom of the difference subpixel area, so as to improve the different subpixel areas Light under different perspectives, the problem of causing colour cast since brightness is different.
Under big visual angle, partially yellow or partially blue phenomenon easily occurs for the white picture of liquid crystal display panel, illustrates the monochromatic light of blue subpixels It is affected to colour cast, can be controlled separately the corresponding shared public electrode Scom's of blue subpixels using the design of the application Current potential improves colour cast, in addition, the corresponding blue color blocking penetrance of blue subpixels is smaller, the monochromatic light of blue subpixels is as before The influence to panel penetrance is smaller, and therefore, the application, which can reach, to be influenced to improve colour cast in lesser situation in penetrance Purpose.
The application also provides a kind of liquid crystal display device including above-mentioned array substrate.
In conclusion array substrate provided by the present application and liquid crystal display device, by distinguishing in different subpixel region It is correspondingly arranged shared public electrode, the shared public electrode in different subpixel region can be independently controlled respectively, pass through tune The voltage swing of the corresponding shared public electrode in different subpixel region is saved, Lai Gaishan different subpixel region is due to different wave length Light, and under different perspectives because brightness it is different caused by colour cast.Further, since the shared public electrode in different subpixel region Current potential can be controlled individually, therefore the application is smaller on the influence of the penetrance of display device.
Although above preferred embodiment is not to limit in conclusion the application is disclosed above with preferred embodiment The application processed, those skilled in the art are not departing from spirit and scope, can make various changes and profit Decorations, therefore the protection scope of the application subjects to the scope of the claims.

Claims (10)

1. a kind of array substrate characterized by comprising
Underlay substrate, cross one another scan line and data line are provided on the underlay substrate, and the underlay substrate correspondence is set There is the subpixel area of array distribution, each subpixel area includes primary area and time area;
It is provided with primary area thin film transistor (TFT), secondary area's thin film transistor (TFT), shared thin film transistor (TFT) in the subpixel area and is total to Public electrode is enjoyed, a shared public electrode is correspondingly connected with the primary area thin film transistor (TFT) and the institute of a subpixel area State shared thin film transistor (TFT);
The grid and source electrode of the primary area thin film transistor (TFT) are respectively connected to the scan line and the data line, secondary area's film The grid and source electrode of transistor are respectively connected to the scan line and the data line, the primary area thin film transistor (TFT) and the secondary area The drain electrode of thin film transistor (TFT) accesses the first public electrode;The grid of the shared thin film transistor (TFT) accesses the scan line, institute The drain electrode for stating shared thin film transistor (TFT) is connect with the drain electrode of secondary area's thin film transistor (TFT), the source electrode of the shared thin film transistor (TFT) Access the shared public electrode;
Wherein, the shared public electrode is respectively connected to control terminal, and the control terminal provides different potentials signal for individually controlling The current potential of the shared public electrode is made, to improve the colour cast of the subpixel area corresponding to the shared public electrode.
2. array substrate according to claim 1, which is characterized in that subpixel area described in corresponding every a line is respectively set There is the scan line, the scan line is between the primary area and the secondary area, corresponding each column sub-pixel area Domain is provided with the data line.
3. array substrate according to claim 1, which is characterized in that be additionally provided with primary area liquid crystal electricity in the subpixel area The area Rong Heci liquid crystal capacitance;
First pole plate of the primary area liquid crystal capacitance is connect with the drain electrode of the primary area thin film transistor (TFT), the primary area liquid crystal capacitance The second pole plate connect with first public electrode;
First pole plate of secondary area's liquid crystal capacitance is connect with the drain electrode of secondary area's thin film transistor (TFT), secondary area's liquid crystal capacitance The second pole plate connect with first public electrode.
4. array substrate according to claim 1, which is characterized in that the array substrate further include the second public electrode, The first storage capacitance of primary area, the second storage capacitance of primary area, the first storage capacitance of secondary area, the second storage capacitance of secondary area.
5. array substrate according to claim 4, which is characterized in that the first pole plate of first storage capacitance of primary area with The drain electrode of the primary area thin film transistor (TFT) connects, the second pole plate and second public electrode of first storage capacitance of primary area Connection;First pole plate of second storage capacitance of primary area is connect with the source electrode of the primary area thin film transistor (TFT), the primary area Second pole plate of two storage capacitances is connect with the shared public electrode.
6. array substrate according to claim 5, which is characterized in that the first pole plate of secondary first storage capacitance of area with The drain electrode of the shared thin film transistor (TFT) connects, the second pole plate and second public electrode of secondary first storage capacitance of area Connection;First pole plate of second storage capacitance of secondary area is connect with the source electrode of the shared thin film transistor (TFT), the secondary area Second pole plate of two storage capacitances is connect with the shared public electrode.
7. array substrate according to claim 4, which is characterized in that the current potential of first public electrode and described second The current potential of public electrode is identical.
8. array substrate according to claim 1, which is characterized in that the primary area and the secondary area respectively correspond to four farmlands Liquid crystal molecule.
9. array substrate according to claim 1, which is characterized in that a shared public electrode passes through a signal lead It is connected to the control terminal.
10. a kind of includes the liquid crystal display device of the array substrate as described in claim 1~9 any claim.
CN201910292587.0A 2019-04-12 2019-04-12 A kind of array substrate and liquid crystal display device Pending CN110109296A (en)

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Cited By (9)

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CN111258142A (en) * 2020-03-16 2020-06-09 Tcl华星光电技术有限公司 Pixel driving circuit and display panel
CN111323956A (en) * 2020-04-08 2020-06-23 Tcl华星光电技术有限公司 Liquid crystal display panel, display module and electronic device
CN112782881A (en) * 2019-11-07 2021-05-11 咸阳彩虹光电科技有限公司 Pixel unit, display panel and display device
CN113075825A (en) * 2021-03-16 2021-07-06 Tcl华星光电技术有限公司 Array substrate and display panel
CN113140608A (en) * 2021-04-20 2021-07-20 合肥京东方光电科技有限公司 Display substrate, display device and driving method of display device
CN114236925A (en) * 2021-12-14 2022-03-25 苏州华星光电技术有限公司 Array substrate and liquid crystal display panel
WO2023004864A1 (en) * 2021-07-29 2023-02-02 深圳市华星光电半导体显示技术有限公司 Display panel and display apparatus
WO2023092631A1 (en) * 2021-11-23 2023-06-01 深圳市华星光电半导体显示技术有限公司 Liquid crystal display panel and display terminal
WO2023216245A1 (en) * 2022-05-07 2023-11-16 深圳市华星光电半导体显示技术有限公司 Control method for display panel, and display panel

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Application publication date: 20190809