CN110085623A - Dot structure and preparation method thereof and display device - Google Patents
Dot structure and preparation method thereof and display device Download PDFInfo
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- CN110085623A CN110085623A CN201810439677.3A CN201810439677A CN110085623A CN 110085623 A CN110085623 A CN 110085623A CN 201810439677 A CN201810439677 A CN 201810439677A CN 110085623 A CN110085623 A CN 110085623A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/13—Active-matrix OLED [AMOLED] displays comprising photosensors that control luminance
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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Abstract
The present invention relates to a kind of dot structure and preparation method thereof and display device, which includes array substrate, multiple pixel units and defines layer, and multiple pixel units are arranged at intervals in array substrate, and each pixel unit includes multiple spaced sub-pixels；Defining layer includes the first lattice of black and the second lattice of light transmission, first lattice and the second lattice enclose jointly is set as a network-like structure, first lattice is arranged between two neighboring pixel unit, to separate two adjacent pixel units, second lattice is arranged between the adjacent two sub-pixels of each pixel unit, to separate two adjacent sub-pixels of each pixel unit.Above-mentioned dot structure can be realized the high-resolution display of display device.
Description
Technical field
The present invention relates to field of display more particularly to a kind of dot structure and preparation method thereof and display devices.
Background technique
With the development in mobile display market and the market demand of the apparent image quality of pursuit, high-resolution display technology is increasingly
It is taken seriously.By taking the typographical display technology that the world is being researched and developed as an example, in order to be applied to mobile display device or the next generation
The occasions such as high-resolution video, resolution ratio are needed to further increase on the original basis, be provided sometimes even over printing machine itself
Resolution limit.For this purpose, it is some by subdividing sub-pixel in original pixel, and Rational Arrangement combines these pixels
Technology is invented.Still for printing organic light emission (OLED) display technology: in traditional scheme, each pixel passes through picture
Element defines layer and defines its shape, and with other pixel isolations.Pixel defining layer circle makes pixel region and non-picture on substrate as a result,
Plain area.Pixel region is pixel light emission region.And the non-pixel areas between them then has the dike case (bank) of insulation by adjacent picture
Element is kept apart, that is, pixel dividing walls.Due to the limitation of technique, the size of this independent pixel is had certain limitations, and is especially existed
In current inkjet printing printing technology, due to the technical restriction of printing ink, the smallest monochrome Pixel Dimensions are often still
It is not able to satisfy the needs of high-resolution display.
On the other hand, other display manufacture crafts in addition to above-mentioned printing light emitting pixel are but relatively more mature.Than
Such as, display base plate, the driving circuit on substrate and technique of pixel defining layer etc. are made.By long-run development, may be used
To meet various high-resolution needs.Then, in order to overcome the limitation of luminescent device monochrome pixel manufacturing process, a kind of solution party
Case is, by, allowing the arrangement of subpixels of the same color of different pixels it to form a biggish same color pixel together
Region.Or change an angle and say, i.e., manufacture when manufacturing luminescent device a monochrome pixel further passes through division driving electricity
The modes such as road are divided into the monochromatic pixel of smaller son, and distribute to different RGB color pixels, are achieved in mentioning for resolution ratio
It rises.
It is worth noting that, the dividing wall of pixel defining layer is generally being shown by transparent material by semiconductor lithography process
It is made on the substrate of panel.All non-pixel areas being present between regularly arranged pixel due to it are practical just to form one kind
It is periodically latticed, optically there is the characteristic that can scatter light.It, which can not only generate the light that light emitting pixel is emitted, dissipates
It penetrates, can also generate scattering to ambient light, this can have an adverse effect to high-resolution display.For example, outdoor natural light may quilt
Such pixel defining layer largely scatters, and causes reflective interference, floods display itself and shines.In addition, different rgb pixels
As such scattering interferes with each other between sub-pixel, diffusing scattering is generated, reduces the clarity that pixel shows image.In order to
This problem is solved, some display producers propose the method with dyeing pixel dividing walls, that is, make pixel dividing walls darkly
Color absorbs various scattering light, to improve anti-reflective light ability.However, this black picture element dividing wall can also absorb pixel itself
The light issued can reduce display brightness, influence resolution ratio.
Summary of the invention
Based on this, it is necessary to provide a kind of dot structure of high-resolution display that can be realized display device.
In addition, also providing the preparation method and display device of a kind of dot structure.
A kind of dot structure, comprising:
Array substrate；
The pixel unit at multiple intervals in the array substrate is set, and each pixel unit includes multiple intervals
The sub-pixel of setting；
Layer is defined, the second lattice of the first lattice including black and light transmission, first lattice and described the
Two compartment portion encloses jointly is set as a network-like structure, and first lattice is arranged between the two neighboring pixel unit,
To separate two adjacent pixel units, adjacent two of each pixel unit are arranged in second lattice
Between the sub-pixel, to separate two adjacent sub-pixels of each pixel unit.
Since the layer that defines of above-mentioned dot structure includes the first lattice of black and the second lattice of light transmission, second point
It is enclosed jointly every portion and the first lattice and is set as a network-like structure, the first lattice of black is arranged in two neighboring pixel unit
Between, to separate two adjacent pixel units, to reduce interfering with each other between adjacent pixel unit and diffusing scattering, the of light transmission
Two compartment portion is arranged between the adjacent two sub-pixels of each pixel unit, adjacent with two that separate each pixel unit
Sub-pixel, to increase light extraction efficiency, be conducive to guaranteeing that the side of the part sub-pixel in each pixel unit can go out light
Realize that the high-resolution of display device is shown.
First lattice is prepared by sizing material in one of the embodiments, containing can be in the sizing material
Become the photochromic material of black under illumination effect.
Second lattice is prepared by the sizing material in one of the embodiments,.
The photochromic material can become black under the radiation of ultraviolet light in one of the embodiments,.
The photochromic material is selected from 1,2- dihydroquinoline in one of the embodiments, 1,2- dihydroquinoline is spread out
At least one of biology, spiro-pyrans dyestuff, spiral shell phenoxazine dye and metal halide.
The metal halide is selected from silver halide, zinc halide, halogenation cadmium, copper halide and halogen in one of the embodiments,
Change at least one of magnesium.
In one of the embodiments, according to mass percentage, the sizing material include: 4%~50% photosensitive resin,
0.001%~30% sensitizer, 0.001%~30% photochromic material and 30%~95% solvent.
Photosensitive resin is selected from polyimides, polycarboxylated styrene, polycarboxylated styrene and spreads out in one of the embodiments,
Biology, poly(4-hydroxystyrene), the derivative of poly(4-hydroxystyrene), polyester ring race's acrylate and polyester ring race acrylate
One of copolymer, and/or, the sensitizer is selected from least one of light-sensitive compound and Photoacid generators.
A kind of preparation method of dot structure, includes the following steps:
It is formed in array substrate and defines film, so that the film that defines includes the first initial lattice and the second initial separation
Portion, and the first initial lattice and the described second initial lattice enclose jointly and are set as a network-like structure, at the beginning of described first
Contain photochromic material in beginning lattice；
Processing is exposed to the described first initial lattice, the photochromic material is made to become black, it is black to obtain
Described first initial lattice of color；
The film that defines is subjected to curing process, obtains including the first lattice of black and the second lattice of light transmission
Define layer；
Multiple pixel units including multiple sub-pixels are set in the array substrate, and make described first to separate position
Between the two neighboring pixel unit, second lattice is located at described in adjacent two of each pixel unit
Between sub-pixel, dot structure is obtained.
Described in one of the embodiments, includes: using sizing material in battle array the step of film is defined in formation in array substrate
Film layer is formed on column substrate, to the film layer exposure-processed, then carries out development treatment, obtains described defining film, the sizing material
In contain the photochromic material.
In one of the embodiments, according to mass percentage meter, the sizing material includes: 4%~50% photosensitive tree
Rouge, 0.001%~30% sensitizer, 0.001%~30% photochromic material and 30%~95% solvent.
Photosensitive resin is selected from polyimides, polycarboxylated styrene, polycarboxylated styrene and spreads out in one of the embodiments,
Biology, poly(4-hydroxystyrene), the derivative of poly(4-hydroxystyrene), polyester ring race's acrylate and polyester ring race acrylate
One of copolymer；And/or the sensitizer is selected from least one of light-sensitive compound and Photoacid generators.
Described the step of being exposed processing to the described first initial lattice includes: use in one of the embodiments,
Mask covers the second initial lattice；Ultraviolet light processing is carried out to the described first initial lattice, so that the light
Off-color material is caused to become black under light illumination, to obtain the described first initial lattice of black.
The photochromic material is selected from 1,2- dihydroquinoline in one of the embodiments, 1,2- dihydroquinoline is spread out
At least one of biology, spiro-pyrans dyestuff, spiral shell phenoxazine dye and metal halide.
The metal halide is selected from silver halide, zinc halide, halogenation cadmium, copper halide and halogen in one of the embodiments,
Change at least one of magnesium.
A kind of display device, the preparation method preparation including any of the above-described kind of dot structure or any of the above-described kind of dot structure
Dot structure.
Detailed description of the invention
Fig. 1 is the schematic diagram of the dot structure of an embodiment；
Fig. 2 is the flow chart of the preparation method of the dot structure of an embodiment.
Specific embodiment
To facilitate the understanding of the present invention, a more comprehensive description of the invention is given in the following sections with reference to the relevant attached drawings.In attached drawing
Give preferred embodiment of the invention.But the invention can be realized in many different forms, however it is not limited to herein
Described embodiment.On the contrary, purpose of providing these embodiments is keeps the understanding to the disclosure more saturating
It is thorough comprehensive.
Unless otherwise defined, all technical and scientific terms used herein and belong to technical field of the invention
The normally understood meaning of technical staff is identical.Term as used herein in the specification of the present invention is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term " and or " used herein includes one or more phases
Any and all combinations of the listed item of pass.
As shown in Figure 1, the dot structure 100 of an embodiment, including array substrate 110, pixel unit 120 and define layer
130。
Array substrate 110 can be substrate commonly used in the art, such as tft array substrate.
Pixel unit 120 is multiple, and is arranged at intervals in array substrate 110.Each pixel unit 120 includes multiple
Spaced sub-pixel 122.Specifically, there are three types of the sub-pixels 122 of color for each tool of pixel unit 120, respectively red
Sub-pixel, green sub-pixels and blue subpixels.
Define the first lattice 132 of layer 130 including black and the second lattice 134 of light transmission, the second lattice 134 with
First lattice 132 encloses jointly is set as a network-like structure.
First lattice 132 is arranged between two neighboring pixel unit 120, to separate two adjacent pixel units
120, to reduce interfering with each other between adjacent pixel unit 120 and diffusing scattering.
Specifically, the first lattice 132 is prepared by sizing material, and black can be become under illumination effect by containing in sizing material
Photochromic material so that the first lattice 132 be in black.The photochromic material can be within the scope of predetermined band
Light irradiation under become black, and be in light transmission state under the light irradiation outside predetermined band range.
Further, photochromic material can become black under the radiation of ultraviolet light.
Specifically, photochromic material be selected from 1,2- dihydroquinoline, the derivative of 1,2- dihydroquinoline, spiro-pyrans dyestuff,
One of spiral shell phenoxazine dye and metal halide.Wherein, the derivative of 1,2- dihydroquinoline is, for example, 1,2- dihydro -2- oxygen
For Cinchonic Acid's ester.
More specifically, metal halide is selected from one of silver halide, zinc halide, halogenation cadmium, copper halide and magnesium halide.
Further, according to mass percentage, sizing material include: 4%~50% photosensitive resin, 0.001%~30%
Sensitizer, 0.001%~30% photochromic material and 30%~95% solvent.
Specifically, photosensitive resin is selected from the derivative, poly- to hydroxyl of polyimides, polycarboxylated styrene, polycarboxylated styrene
Base styrene, the derivative of poly(4-hydroxystyrene), polyester ring race's acrylate and polyester ring race acrylate copolymer in
One kind.Wherein, the derivative of poly(4-hydroxystyrene) for example can be fluoro poly(4-hydroxystyrene).Polycarboxylated styrene
Derivative for example can be 1,2- dihydro-2-oxoquinoline -4- carboxylate.The copolymer of polyester ring race acrylate for example can be with
For the copolymer formed to acetoxy-styrene, tert-butyl acrylate and 2- methyl -2- adamantyl methacrylate.
Specifically, sensitizer is selected from one of light-sensitive compound and Photoacid generators.
Light-sensitive compound is the light-sensitive compound of this field routine.Specifically, light-sensitive compound is diazo naphthoquinone or diazonium
The derivative of naphthoquinones.More specifically, the derivative of diazo naphthoquinone is at least two with a diazido naphthoquinone sulfonic acid base folded
Nitrogen base naphthoquinone sulfonic acid ester compounds.Such as bis- nitrine quinone 4- sulphonic acid ester of 1,2-.
Photoacid generators can be the light-sensitive compound of this field routine.Specifically, Photoacid generators are selected from triphen
Nine fluorine butane sulfonate of base sulfonium (triphenylsulphonium nonafluorobutane sulfonate), diphenyl iodine
Fluoroform sulphonate (diphenyliodoinum trifluoromethane sulfonate), nine fluorine fourth sulfonic acid of diphenyl iodonium
Salt (diphenyliodonium nonafluorobutane sulfonate), triphenylsulfonium triflate sulfonate
(triphenylsulfonium trifluoromethane sulfonate), triazine (triazines), oxazole
(oxazoles), oxadiazoles (oxadiazoles), thiazole (thiazoles), for 2- pyranone (substituted2-
Pyrones), sulfophenylate (phenol sulfonic esters), double sulfonyl methane (bis-
) and at least one of double sulfonyidiazomethanes (bis-sulfonyidiazomethanes) sulfonylmethanes.
Solvent can be the solvent of this field routine.Specifically, solvent is selected from chlorobenzene, ethyl lactate, methyl phenyl ethers anisole, N- methyl
Pyrrolidones, DMAC N,N' dimethyl acetamide, N,N-dimethylformamide, dimethyl sulfoxide, hexamethylphosphoramide, sulfolane,
At least one of dioxane, toluene, dimethylbenzene, benzene, methylene chloride, chloroform and water.
Further, sizing material further includes the auxiliary agent that mass percentage is 0.001%~10%.Auxiliary agent is that this field is conventional
Facilitate solidify black and white pattern or adjust define layer performance substance.Specifically, auxiliary agent is dimethyl iodonium hydroxide
(dimethyl iodonium hydroxide) or trimethyl sulfonium hydroxide (trimethyl sulfonium
hydroxide)。
Second lattice 134 is arranged between the adjacent two sub-pixels 122 of each pixel unit 120, every to separate
Two adjacent sub-pixels 122 of a pixel unit 120, to guarantee the side of the part sub-pixel 122 in each pixel unit 120
Face can go out light, to increase light extraction efficiency.
Further, the second lattice 134 is also prepared by above-mentioned sizing material.
It should be noted that the second lattice 134 can not also use above-mentioned sizing material to be prepared, the second lattice can be with
It is prepared using the material of other light transmissions, for example, not adding the sizing material of above-mentioned photochromic material.
Due to the second separation for defining the first lattice 132 that layer 130 includes black and light transmission of above-mentioned dot structure 100
Portion 134, the second lattice 134 and the first lattice 132 enclose jointly is set as a network-like structure, and the setting of the first lattice 132 exists
Between two neighboring pixel unit 120, to separate two adjacent pixel units 120, to reduce between adjacent pixel unit 120
It interferes with each other and diffusing scattering, the second lattice 134 is arranged between the adjacent two sub-pixels 122 of each pixel unit 120,
To separate two adjacent sub-pixels 122 of each pixel unit 120, to guarantee the part sub- picture in each pixel unit 120
The side of element 122 can go out light, and to increase light extraction efficiency, the high-resolution for being advantageously implemented display device is shown.
As shown in Fig. 2, the preparation method of the dot structure 100 of an embodiment, is a kind of system of above-mentioned dot structure 100
Preparation Method.This method comprises the following steps:
Step S210: forming in array substrate 110 and define film, so that defining film includes the first initial lattice and second
Initial lattice, and the first initial lattice and the second initial lattice enclose jointly and are set as a network-like structure.
Wherein, contain photochromic material in the first initial lattice.The photochromic material can be in predetermined band model
Become black under light irradiation in enclosing, and is in light transmission state under the light irradiation outside predetermined band range.
Specifically, the light of predetermined band range is ultraviolet light.Wherein, predetermined band range is 10nm~400nm.
Specifically, photochromic material be selected from 1,2- dihydroquinoline, the derivative of 1,2- dihydroquinoline, spiro-pyrans dyestuff,
One of spiral shell phenoxazine dye and metal halide.Wherein, the derivative of 1,2- dihydroquinoline is, for example, 1,2- dihydro -2- oxygen
For Cinchonic Acid's ester.
More specifically, metal halide is selected from one of silver halide, zinc halide, halogenation cadmium, copper halide and magnesium halide.
Further, according to mass percentage meter, sizing material include: 4%~50% photosensitive resin, 0.001%~
30% sensitizer, 0.001%~30% photochromic material and 30%~95% solvent.The sizing material is a kind of photoetching
Glue, and be positive photoresist, so that it after exposure-processed, the part by illumination can become soluble, and can pass through development treatment
After be dissolved, leave behind the part that is not affected by light and form image.
The sizing material the preparation method comprises the following steps: by photosensitive resin, sensitizer, photochromic material and solvent mix, obtain sizing material.
If in sizing material material needs could dissolve in a heated condition, at this point, by photosensitive resin, sensitizer, photochromic material and
The step of solvent mixes are as follows: photosensitive resin, sensitizer, photochromic material and solvent are heated and mixed.
Specifically, photosensitive resin is selected from the derivative, poly- to hydroxyl of polyimides, polycarboxylated styrene, polycarboxylated styrene
Base styrene, the derivative of poly(4-hydroxystyrene), polyester ring race's acrylate and polyester ring race acrylate copolymer in
One kind.Specifically, the copolymer of polyester ring race acrylate for example can be for acetoxy-styrene, tert-butyl acrylate
The copolymer formed with 2- methyl -2- adamantyl methacrylate.
Specifically, sensitizer is selected from one of light-sensitive compound and Photoacid generators.
Light-sensitive compound is the light-sensitive compound of this field routine.Specifically, light-sensitive compound is diazo naphthoquinone or diazonium
The derivative of naphthoquinones.More specifically, the derivative of diazo naphthoquinone is at least two with a diazido naphthoquinone sulfonic acid base folded
Nitrogen base naphthoquinone sulfonic acid ester compounds.Such as bis- nitrine quinone 4- sulphonic acid ester of 1,2-.
Photoacid generators can be the light-sensitive compound of this field routine.Specifically, Photoacid generators are selected from triphen
Nine fluorine butane sulfonate of base sulfonium (triphenylsulphonium nonafluorobutane sulfonate), diphenyl iodine
Fluoroform sulphonate (diphenyliodoinum trifluoromethane sulfonate), nine fluorine fourth sulfonic acid of diphenyl iodonium
Salt (diphenyliodonium nonafluorobutane sulfonate), triphenylsulfonium triflate sulfonate
(triphenylsulfonium trifluoromethane sulfonate), triazine (triazines), oxazole
(oxazoles), oxadiazoles (oxadiazoles), thiazole (thiazoles), for 2- pyranone (substituted2-
Pyrones), sulfophenylate (phenol sulfonic esters), double sulfonyl methane (bis-
) and at least one of double sulfonyidiazomethanes (bis-sulfonyidiazomethanes) sulfonylmethanes.
Solvent can be the solvent of this field routine.Specifically, solvent is selected from chlorobenzene, ethyl lactate and methyl phenyl ethers anisole, N- first
Base pyrrolidones, n,N-dimethylacetamide, n,N-Dimethylformamide, dimethyl sulfoxide, hexamethylphosphoramide, ring fourth
At least one of sulfone, dioxane, toluene, dimethylbenzene, benzene, methylene chloride, chloroform and water.
Further, sizing material further includes the auxiliary agent that mass percentage is 0.001%~10%.Auxiliary agent is that this field is conventional
Facilitate solidify black and white pattern or adjust define layer 130 performance substance.Specifically, auxiliary agent is dimethyl iodine hydroxide
Object (dimethyl iodonium hydroxide) or trimethyl sulfonium hydroxide (trimethyl sulfonium
hydroxide)。
Specifically, in array substrate 110 formed define film the step of include: using sizing material in array substrate 110 shape
Film forming layer obtains defining film to the exposed processing of film layer and development treatment.
More specifically, the method for forming film layer in array substrate 110 using sizing material is spin coating, spraying, blade coating or silk screen
Printing.The step of exposure-processed and development treatment are as follows: use mask shield portions film layers, blocked using ultraviolet light to not being masked
Part film layer is exposed processing, is then removed by development treatment by the part film layer after ultraviolet light.
It should be noted that the step of exposure-processed, is not limited to aforesaid way, for example, with mask shield portions film layer,
So that ultraviolet light is exposed processing to the part film layer blocked is not masked, then removed by development treatment not by ultraviolet light
The part film layer of irradiation, at this point, sizing material is the negtive photoresist containing above-mentioned photochromic material, then, photochromic material in order to prevent
Material reforms into black when film layer exposure, when exposing to film layer, is exposed using the shorter ultraviolet light of wavelength to film layer, and
The material of ability blackening is irradiated in photochromic material selection under the ultraviolet light of larger wavelength, i.e., needed for photochromic material blackening
The wavelength of ultraviolet light is greater than the wavelength of the ultraviolet light used film layer exposure.Alternatively, sizing material can also be directlyed adopt in array base
Network-like light transmission is formed on plate 110 defines film.If directly forming defining for network-like light transmission in array substrate 110
The material of film, the second initial lattice can also be different from the material of the first initial lattice, for example, the second initial lattice can
To use the above-mentioned sizing material for not containing photochromic material to be prepared.
Specifically, define film with a thickness of 0.1 micron~10 microns.
Step S220: being exposed processing to the first initial lattice, the photochromic material made to become black, with
To the first initial lattice of black.
Specifically, the step of being exposed processing to the first initial lattice includes: to cover second with mask initially to separate
Portion carries out ultraviolet light processing to the first initial lattice, so that photochromic material becomes black under light illumination, to obtain
The initial lattice of the first of black.
Step S230: will define film curing process, obtain including that the first lattice 132 of black and the second of light transmission separate
Portion 134 defines layer 130.
Specifically, the method for curing process is to be heating and curing.More specifically, it is 60 DEG C~500 DEG C that cured temperature, which is added,.
Step S240: being arranged multiple pixel units 120 including multiple sub-pixels 122 in array substrate 110, and makes
For one lattice 132 between two neighboring pixel unit 120, the second lattice 134 is located at the adjacent of each pixel unit 120
Two sub-pixels 122 between.
The preparation method of above-mentioned dot structure 100 is easy to operate, easy to industrialized production.And above-mentioned dot structure 100
The dot structure 100 that preparation method is prepared can not only reduce interfering with each other between adjacent pixel unit 120 and diffusing scattering,
And can also ensure that the side of the part sub-pixel 122 in each pixel unit 120 can go out light, to increase light extraction efficiency,
The high-resolution for being advantageously implemented display device is shown.
The display device of one embodiment, including above-mentioned dot structure 100.
Specifically, display device can be liquid crystal display, organic light emitting diode display or quantum dot displays.
Due to above-mentioned dot structure 100 black the first lattice 132 setting two neighboring pixel unit 120 it
Between, to separate two adjacent pixel units 120, and interfering with each other between capable of reducing adjacent pixel unit 120 and diffusing scattering,
Second lattice 134 of light transmission is arranged between the adjacent two sub-pixels 122 of each pixel unit 120, each to separate
Two adjacent sub-pixels 122 of pixel unit 120 can guarantee the side of the part sub-pixel 122 in each pixel unit 120
Face can go out light, to increase light extraction efficiency, so that display device has higher resolution ratio.
The following are specific embodiment part, (following embodiment unless otherwise specified, does not then contain and removes inevitable impurity
Other components not yet explicitly pointed out in addition.):
Embodiment 1
The preparation process of the dot structure of the present embodiment is as follows:
(1) according to table 1, sizing material is spin-coated in array substrate, through drying, the film layer with a thickness of D is formed, is blocked with mask
Part film layer is λ using wavelength1The ultraviolet light of nanometer is exposed processing to the part film layer blocked is not masked, then leads to
Development treatment removal is crossed by the part film layer after ultraviolet light, being formed includes the first initial lattice and the second initial lattice
Define film, and the first initial lattice and the second initial lattice enclose jointly and are set as a network-like structure.Wherein, according to quality
Percentage composition (wt%) meter, the composition of sizing material are as shown in table 2.
(2) the second initial lattice is covered with mask, will define film in wavelength according to table 1 is λ2Under the ultraviolet light light of nanometer
It is irradiated processing, so that the first initial lattice becomes black.
(3) according to table 1, film will be defined and be heating and curing at T DEG C t hours, obtain include black the first lattice and light transmission
Second lattice define layer.
(4) multiple pixel units including multiple sub-pixels are set in array substrate, and the first lattice is made to be located at phase
Between adjacent two pixel units, the second lattice is located between the adjacent two sub-pixels of each pixel unit, obtains picture
Plain structure.
Table 1
| D (micron) | λ1(nanometer) | λ2(nanometer) | T(℃) | T (hour) | |
| Embodiment 1 | 5 | 248 | 248 | 260 | 1 |
| Embodiment 2 | 0.1 | 248 | 248 | 230 | 0.5 |
| Embodiment 3 | 10 | 248 | 248 | 230 | 1 |
| Embodiment 4 | 2 | 193 | 248 | 200 | 0.5 |
| Embodiment 5 | 8 | 193 | 248 | 200 | 1 |
| Embodiment 6 | 0.8 | 248 | 248 | 260 | 0.5 |
| Embodiment 7 | 3 | 248 | 248 | 230 | 0.5 |
| Embodiment 8 | 6 | 248 | 248 | 260 | 1 |
| Embodiment 9 | 4 | 193 | 248 | 200 | 1 |
| Embodiment 10 | 7 | 248 | 248 | 260 | 1 |
| Embodiment 11 | 9 | 248 | 248 | 230 | 1 |
| Embodiment 12 | 5 | 248 | 248 | 260 | 1 |
| Embodiment 13 | 8 | 193 | 248 | 200 | 1 |
| Embodiment 14 | 1 | 248 | 248 | 230 | 0.5 |
Table 2
Comparative example 1
The preparation process of the dot structure of comparative example 1 is as follows:
(1) sizing material is spin-coated in array substrate, through drying, the film layer with a thickness of D is formed, with mask shield portions film
Layer, is exposed processing to the part film layer blocked is not masked using the ultraviolet light of 1 phase co-wavelength of embodiment, then by aobvious
Shadow processing removal is formed and network-like is defined film by the part film layer after ultraviolet light.Wherein, the group of the sizing material of comparative example 1
At roughly the same with embodiment 1, difference is, does not have photochromic material in comparative example 1, at this point, the group of the sizing material of comparative example 1
Become: 31.6% photosensitive resin, 10.5% sensitizer and 57.9% solvent.
(2) film will be defined to be heating and curing under the identical temperature and time of embodiment 1 processing, obtain defining layer.
(3) multiple pixel units including multiple sub-pixels are set in array substrate, so that each sub-pixel is located at net
In a grid for defining film for network shape.
Comparative example 2
The preparation process of the dot structure of comparative example 2 is as follows:
(1) sizing material is spin-coated in array substrate, through drying, the film layer with a thickness of D is formed, with mask shield portions film
Layer, is exposed processing to the part film layer blocked is not masked using the ultraviolet light of 1 phase co-wavelength of embodiment, then by aobvious
Shadow processing removal is formed and network-like is defined film by the part film layer after ultraviolet light.Wherein, the group of the sizing material of comparative example 2
At same as Example 1.
(2) film will be defined and is irradiated processing under the ultraviolet light of the identical wavelength of embodiment 1, so that defining film becomes black
Color.
(3) film will be defined to be heating and curing under the identical temperature and time of embodiment 1 processing, obtain defining layer.
(4) multiple pixel units including multiple sub-pixels are set in array substrate, so that each sub-pixel is located at net
In a grid for defining film for network shape.
Test:
High-resolution item is carried out to the dot structure that 1~embodiment of embodiment 14 and comparative example 1, comparative example 2 are prepared
Contrast test under part.Test method: under conditions of intensity of illumination is 60lux indoors, respectively by dot structure in electric current
Density is 15mA/cm2Under brightness LonWith thorough ' dark ' picture intrinsic brilliance (containing indoor reflective) L for closing electric currentoff, obtain
To the former divided by the ratio (bigger expression contrast is better) of the latter, obtains embodiment 1~14 and comparative example 1, comparative example 2 are made
It is as shown in table 3 that standby obtained dot structure carries out resolution ratio.
Table 3
From table 3 it is observed that the contrast of the dot structure of embodiment 1~14 is at least 2445, it is superior to comparative example 1
With the dot structure of comparative example 2, it is clear that the dot structure of embodiment 1~14 has preferable resolution ratio.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (16)
1. a kind of dot structure characterized by comprising
Array substrate；
The pixel unit at multiple intervals in the array substrate is set, and each pixel unit includes multiple interval settings
Sub-pixel；
Define layer, the second lattice of the first lattice including black and light transmission, first lattice with described second point
It is enclosed jointly every portion and is set as a network-like structure, first lattice is arranged between the two neighboring pixel unit, to divide
Every two adjacent pixel units, second lattice is arranged in described in adjacent two of each pixel unit
Between sub-pixel, to separate two adjacent sub-pixels of each pixel unit.
2. dot structure according to claim 1, which is characterized in that first lattice is prepared by sizing material, institute
It states in sizing material containing the photochromic material that can become black under illumination effect.
3. dot structure according to claim 2, which is characterized in that second lattice is prepared by the sizing material
It arrives.
4. dot structure according to claim 2, which is characterized in that the photochromic material can be in the photograph of ultraviolet light
Become black under the effect of penetrating.
5. dot structure according to claim 4, which is characterized in that the photochromic material is selected from 1,2- dihydro quinoline
At least one of quinoline, the derivative of 1,2- dihydroquinoline, spiro-pyrans dyestuff, spiral shell phenoxazine dye and metal halide.
6. dot structure according to claim 5, which is characterized in that the metal halide be selected from silver halide, zinc halide,
At least one of halogenation cadmium, copper halide and magnesium halide.
7. according to the described in any item dot structures of claim 2~6, which is characterized in that according to mass percentage, the glue
Material include: 4%~50% photosensitive resin, 0.001%~30% sensitizer, 0.001%~30% it is described photochromic
Material and 30%~95% solvent.
8. dot structure according to claim 7, which is characterized in that the photosensitive resin is selected from polyimides, poly- hydroxyl
Styrene, the derivative of polycarboxylated styrene, poly(4-hydroxystyrene), the derivative of poly(4-hydroxystyrene), polyester ring race third
One of the copolymer of olefin(e) acid ester and polyester ring race acrylate, and/or, the sensitizer is selected from light-sensitive compound and photic
At least one of acid producing agent.
9. a kind of preparation method of dot structure, which comprises the steps of:
It is formed in array substrate and defines film, so that the film that defines includes the first initial lattice and the second initial lattice,
And the first initial lattice and the described second initial lattice enclose jointly and are set as a network-like structure, described first initial point
Every containing photochromic material in portion；
Processing is exposed to the described first initial lattice, so that the photochromic material is become black, to obtain black
The first initial lattice；
The film that defines is subjected to curing process, obtains including that the first lattice of black and second lattice of light transmission define
Layer；
Multiple pixel units including multiple sub-pixels are set in the array substrate, and first lattice is made to be located at phase
Between adjacent two pixel units, second lattice is located at the adjacent two sub- picture of each pixel unit
Between element, dot structure is obtained.
10. the preparation method of dot structure according to claim 9, which is characterized in that described to be formed in array substrate
The step of defining film includes: that film layer is formed in array substrate using sizing material, to the film layer exposure-processed, is then developed
Processing, obtain it is described define film, contain the photochromic material in the sizing material.
11. the preparation method of dot structure according to claim 10, which is characterized in that according to mass percentage meter,
The sizing material include: 4%~50% photosensitive resin, 0.001%~30% sensitizer, 0.001%~30% the light
Cause the solvent of off-color material and 30%~95%.
12. the preparation method of dot structure according to claim 11, which is characterized in that the photosensitive resin is selected from polyamides
Imines, polycarboxylated styrene, the derivative of polycarboxylated styrene, poly(4-hydroxystyrene), poly(4-hydroxystyrene) derivative,
One of the copolymer of polyester ring race's acrylate and polyester ring race acrylate；And/or the sensitizer is selected from photosensitizer
Close at least one of object and Photoacid generators.
13. according to the preparation method of the described in any item dot structures of claim 9~12, which is characterized in that described to described
The step of first initial lattice is exposed processing includes: to cover the second initial lattice with mask；To described first
Initial lattice carries out ultraviolet light processing, so that the photochromic material becomes black under light illumination, to obtain black
The described first initial lattice.
14. the preparation method of dot structure according to claim 13, which is characterized in that the photochromic material is selected from
In 1,2- dihydroquinoline, the derivative of 1,2- dihydroquinoline, spiro-pyrans dyestuff, spiral shell phenoxazine dye and metal halide at least
It is a kind of.
15. the preparation method of dot structure according to claim 14, which is characterized in that the metal halide is selected from halogen
Change at least one of silver, zinc halide, halogenation cadmium, copper halide and magnesium halide.
16. a kind of display device, including any one of dot structure according to any one of claims 1 to 8 or claim 9~15
The dot structure of the preparation method preparation of the dot structure.
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