CN110085517A - A kind of rectangle polysilicon solar battery slice processing method of the non-equidimension of length and width - Google Patents
A kind of rectangle polysilicon solar battery slice processing method of the non-equidimension of length and width Download PDFInfo
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- CN110085517A CN110085517A CN201910262282.5A CN201910262282A CN110085517A CN 110085517 A CN110085517 A CN 110085517A CN 201910262282 A CN201910262282 A CN 201910262282A CN 110085517 A CN110085517 A CN 110085517A
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- 238000003672 processing method Methods 0.000 title claims abstract description 16
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- 229920005591 polysilicon Polymers 0.000 title claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 86
- 239000010703 silicon Substances 0.000 claims abstract description 86
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 84
- 238000000034 method Methods 0.000 claims abstract description 40
- 238000005520 cutting process Methods 0.000 claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 claims abstract description 26
- 210000002268 wool Anatomy 0.000 claims abstract description 23
- 235000008216 herbs Nutrition 0.000 claims abstract description 22
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 10
- 238000007650 screen-printing Methods 0.000 claims abstract description 8
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- 238000009792 diffusion process Methods 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- 229910002804 graphite Inorganic materials 0.000 claims description 7
- 239000010439 graphite Substances 0.000 claims description 7
- 239000010453 quartz Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 4
- 230000003628 erosive effect Effects 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- 238000003780 insertion Methods 0.000 claims description 3
- 230000037431 insertion Effects 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 1
- 239000000654 additive Substances 0.000 claims 1
- 230000000996 additive effect Effects 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 230000003749 cleanliness Effects 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000012544 monitoring process Methods 0.000 claims 1
- 229910017604 nitric acid Inorganic materials 0.000 claims 1
- 230000006872 improvement Effects 0.000 description 9
- 230000008901 benefit Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
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- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 238000003854 Surface Print Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The present invention relates to a kind of rectangle polysilicon solar battery slice processing methods of the non-equidimension of length and width, which is characterized in that the described method comprises the following steps: 1) die size is cut；2) making herbs into wool；3) it spreads；4) it etches；5) PECVD；6) silk-screen printing；7) it detects.Few partial application when due to silicon wafer cutting, not only increases silicon wafer cutting production capacity, while saving cutting cost；The program is cut into the size of 156.75mm × 182.88mm to G7 ingot furnace silicon ingot produced, and production line production capacity can promote 16.7%.
Description
Technical field
The present invention relates to a kind of processing methods, and in particular to a kind of rectangle polycrystalline silicon solar electricity of the non-equidimension of length and width
Pond slice processing method belongs to crystal silicon solar energy battery manufacture component technical field.
Background technique
With the development of photovoltaic industry, crystal silicon solar batteries piece is mainly monocrystalline and multicrystalline solar cells, crystal silicon
The reduction of solar battery sheet manufacturing cost and the promotion of cell piece quality are to be continuously needed the problem of our solutions.Solar-electricity
Pond industrial chain can be divided into crystal silicon ingot casting (purification and doping of silicon, produce required silicon materials)-slice and (cut silicon ingot
At size required for production cell piece, the die size now routinely cut is 156.75mm × 156.75mm, and thickness is about 200 micro-
Rice) cell piece (is together in series power generation)-system by-cell piece production (silicon wafer is made into the cell piece that can be generated electricity)-component
The links such as integrated, size quantity body customizes each production equipment of industrial chain thus, it is impossible to do big variation.By silicon rod size
Limitation, at present mainstream list, multicrystalline solar cells size be 156.75mm × 156.75mm.
Summary of the invention
Exactly for the technical problems in the prior art, the rectangle for providing a kind of non-equidimension of length and width is more by the present invention
Crystal silicon solar batteries slice processing method, this method may be implemented in existing battery slice assembly line is not done it is big under the premise of big change
Width improves monolithic battery piece power, to effectively improve battery slice assembly line production capacity, reduce production cost, and is more advantageous to subsequent
Component package, in raising efficiency to a certain degree.
To achieve the goals above, technical scheme is as follows, a kind of rectangular conformal polysilicon of the non-equidimension of length and width
Solar battery slice processing method, the described method comprises the following steps: 1) die size is cut；2) making herbs into wool；3) it spreads；4) it carves
Erosion；5) PECVD；6) silk-screen printing；7) it detects.
As an improvement of the present invention, the step 1) size cutting, specific as follows, silicon wafer cutting is cut using diamond wire
Technology is cut, adjust former cutting scheme: cutting the piece number is set as 6 × 5,7 × 6,8 × 7, to keep the die size being cut into corresponding
Become 156.75mm × 188.10mm, 156.75mm × 182.88mm, 156.75mm × 179.14mm, and then as non-etc.
The raw material silicon wafer of size rectangle crystal-silicon battery slice, wherein 156.75mm × 182.88mm(i.e. 7 × 6) have more size advantage.
As an improvement of the present invention, the step 2 making herbs into wool, specific as follows, making herbs into wool process is to set silicon wafer with chain type
Standby to be substantially carried out sour cleaning, after silicon chip surface making herbs into wool, silicon chip surface forms the absorption that pit is conducive to light, and when making herbs into wool blanking needs
Using with the matched gaily decorated basket of die size, every silicon wafer of automatic blanking can be stuck in the gaily decorated basket after making herbs into wool, and silicon wafer is carried
To lower one of diffusing procedure.
As an improvement of the present invention, the step 3) diffusion, diffusing procedure need use to match with die size
Quartz boat spread using plug-in sheet machine by the back-to-back insertion quartz boat of silicon wafer subsequently into diffusion furnace, come carry silicon wafer into
PN junction is produced in row diffusion.
As an improvement of the present invention, step 4) etching, etching procedure be by silicon wafer chain equipment mainly into
Row acid cleaning (similar with making herbs into wool cleaning), after silicon chip erosion, when blanking, which utilizes, carries silicon wafer with the matched gaily decorated basket of die size
To lower one of filming process.
As an improvement of the present invention, the step 5) PECVD is specific as follows, and filming process needs use and silicon wafer phase
Matched graphite boat (entering tube type apparatus plated film after silicon wafer is sticked into graphite boat) carrying silicon wafer carries out plated film.
As an improvement of the present invention, the step 6) silk-screen printing is specific as follows, what when silkscreen process used
Halftone (electrode shape required for being printed using screen painting in silicon chip surface) size needs to match with die size.
Compared with the existing technology, the invention has the advantages that, 1) technical solution reduces costs, silicon wafer cutting: by
Few partial application when silicon wafer cutting, not only increases silicon wafer cutting production capacity, while saving cutting cost；2) cell piece is processed:
The size of 156.75mm × 182.88mm is cut into G7 ingot furnace silicon ingot produced, production line production capacity can promote 16.7%.By
In the increase of battery chip size, the special gas of unit wattage, the dosage of chemical reagent will be reduced, it is contemplated that totle drilling cost can reduce about
5%；3) component package: the size of 156.75mm × 182.88mm is cut into G7 ingot furnace silicon ingot produced, due to cell piece
Size increases, and former 60 270W package assemblings are existing only to need 52 to can reach equal-wattage, and the reduction of the piece number reduces piece spacing
Occupied area ratio, component power can promote 0.4% or so, that is, reach 271W, improve component efficiency, while reduce generation
The cost of equal unit efficiency；4) program indicates production equipment improvement direction, conducive to the application of flexible manufacturing system.The invention
It not only brings improved efficiency, cost to reduce, but also can help to research and develop more sizes automatic adjustment equipment and multiplexing process system is automatic
Identify handoff technique；The toolings such as setting clamp, the gaily decorated basket and technique initialization are selected to realize integrated flexible manufacturing according to product size；
5) program proposes that diversification is widely used: component not only can be formed with homogeneous structure cell piece according to power station landform etc., it can also
Stock size cell piece of arranging in pairs or groups carries out the use of electric hybrid module structure, to meet the different market demands.
Specific embodiment:
In order to deepen the understanding of the present invention, the present embodiment is described in detail with reference to the accompanying drawing.
Detailed description of the invention
Fig. 1 is silicon ingot cutting scheme schematic diagram of the present invention.
Specific embodiment:
In order to further enhance the appreciation and understanding of the invention, it is further described the technical side with reference to the accompanying drawings and detailed description
Case.
Embodiment 1: referring to Fig. 1: a kind of rectangle polysilicon solar battery slice processing method of the non-equidimension of length and width, institute
Method is stated the following steps are included: 1) die size is cut；2) making herbs into wool；3) it spreads；4) it etches；5) PECVD；6) silk-screen printing；7)
Detection.
The step 1) size cutting, specific as follows, silicon wafer cutting uses Buddha's warrior attendant line cutting technology, adjusts former cutting side
Case: cutting the piece number be set as 6 × 5,7 × 6,8 × 7, thus make the die size being cut into it is corresponding become 156.75mm ×
188.10mm, 156.75mm × 182.88mm, 156.75mm × 179.14mm, and then as non-equidimension rectangle crystal silicon electricity
The raw material silicon wafer of pond piece.Wherein 156.75mm × 182.88mm(i.e. 7 × 6) have more size advantage.
The step 2 making herbs into wool, specific as follows, making herbs into wool process is that silicon wafer is substantially carried out sour cleaning, silicon wafer with chain equipment
After surface wool manufacturing, silicon chip surface forms pit and is conducive to the absorption of light, and when making herbs into wool blanking needs using matched with die size
The gaily decorated basket, every silicon wafer of automatic blanking can be stuck in the gaily decorated basket after making herbs into wool, and silicon wafer is carried to lower one of diffusing procedure.
The step 3) diffusion, diffusing procedure needs carry silicon wafer progress using the quartz boat to match with die size
PN junction is produced in diffusion, using plug-in sheet machine by the back-to-back insertion quartz boat of silicon wafer, is spread subsequently into diffusion furnace.
The step 4) etching, etching procedure are that silicon wafer is substantially carried out acid cleaning with chain equipment (to clean class with making herbs into wool
Like), after silicon chip erosion, using carrying silicon wafer to lower filming process together with the matched gaily decorated basket of die size when blanking.
The step 5) PECVD is specific as follows, and filming process is needed using the graphite boat to match with silicon wafer (by silicon wafer card
Enter tube type apparatus plated film after into graphite boat) carrying silicon wafer progress plated film.
The step 6) silk-screen printing is specific as follows, and the halftone that when silkscreen process uses is (using screen painting in silicon
Electrode shape required for piece surface printing) size needs match with die size.
Application Example: referring to Fig. 1, silicon ingot cutting scheme: existing the produced silicon ingot cut lengths of G6, G7, G8 ingot furnace
Respectively 940.5 × 940.5mm, 1097.25 × 1097.25mm, 1254 × 1254mm.Now by the cutting scheme of silicon ingot by original
Cutting the piece number be 6 × 6,7 × 7,8 × 8 to be changed to 6 × 5,7 × 6,8 × 7 respectively, the former corresponding die size being cut into is all
For 156.75mm × 156.75mm, change the corresponding die size being cut into after cutting scheme become 156.75mm ×
188.10mm, 156.75mm × 182.88mm, 156.75mm × 179.14mm, the silicon wafer after changing cutting scheme keep silicon wafer
One side side length (156.75mm) it is constant, single silicon chip area increases 20%, 16.7%, 14.3% respectively.
Existing silicon wafer cuts the average every partial application of used Buddha's warrior attendant line cutting technology need to be 300 minutes or so, wherein cutter
The skill time is about 200 minutes, and time needs 100 minutes before one knife of every cutting.Due to the change of silicon ingot cutting scheme, originally need
Cut that the silicon materials of 6,7,8 knives is now corresponding need to only to cut 5,6,7 knives, required total time by being reduced within 1800,2100,2400 minutes 1700,
2000,2300 minutes, i.e., silicon wafer cutting whole efficiency promotes about 5.9%, 5%, 4.3%, and reduces labor intensity of workers.
Cell piece improvement of manufacturing line: since silicon wafer width is constant, length increases, it is only necessary to carry out one to battery slice assembly line
Determine the transformation of degree.Therefore the pallet of the entire making herbs into wool production line feeding, discharge section of cell piece and carrying gaily decorated basket size need to be done and accordingly repair
Changing the size to be suitble to new silicon wafer, the quartz boat of diffusing procedure and the graphite boat of PECVD process also need to carry out redesign size,
Silkscreen process needs redesign optimization halftone (relative dimensions design need to be that reference is matched with the size of new silicon wafer).
The improvement cost of battery slice assembly line is lower.It is limited to equipment, technique, diffusion and PECVD process are production capacity bottleneck processes.Now lead to
Increase die size is crossed, technique makes no modifications, and diffusion and PECVD process production capacity correspond to large scale cutting area and can mention respectively
Rise 20%, 16.7%, 14.3%.Making herbs into wool, etching section can promote production capacity by improving belt speed and reaction solution concentration, silk-screen printing and
Detection, which promotes belt speed, can promote production capacity.Then production line production capacity can promote 20%, 16.7%, 14.3%.Due to battery chip size
Increase, the special gas of unit wattage, the dosage of chemical reagent will be reduced, it is contemplated that unit wattage totle drilling cost can reduce about 5%.
The cell piece of 156.75mm × 182.88mm size with respect to other two kinds of sizes (156.75mm × 188.10mm,
156.75mm × 179.14mm) there is preferable size advantage, preferred plan is produced silicon ingot cutting scheme by that will show G7 ingot furnace
7 × 6 are changed to by 7 × 7, i.e. die size becomes 156.75mm × 182.88mm by 156.75mm × 156.75mm.
It should be noted that above-described embodiment, is not intended to limit the scope of protection of the present invention, in above-mentioned technical proposal
On the basis of made equivalents or substitution each fall within the range that the claims in the present invention are protected.
Claims (8)
1. a kind of rectangle polysilicon solar battery slice processing method of the non-equidimension of length and width, which is characterized in that the method
The following steps are included: 1) die size is cut；2) making herbs into wool；3) it spreads；4) it etches；5) PECVD；6) silk-screen printing；7) it detects.
2. the rectangle polysilicon solar battery slice processing method of the non-equidimension of length and width according to claim 1, special
Sign is that the step 1) die size cutting, specific as follows, silicon wafer cutting uses Buddha's warrior attendant line cutting technology, adjusts cutting sheet
Number is 6 × 5,7 × 6,8 × 7, is cut into the rectangular silicon wafer of non-equidimension, the raw material silicon wafer as crystal-silicon battery slice.
3. the rectangle polysilicon solar battery slice processing method of the non-equidimension of length and width according to claim 1, special
Sign is that the step 2 making herbs into wool is specific as follows, and making herbs into wool process is that silicon wafer is substantially carried out sour cleaning with chain equipment, cleaning
Solution selects HF+HNO3, and adds new additive agent in texturing slot；Needed after silicon chip surface making herbs into wool, when making herbs into wool blanking using with
The matched gaily decorated basket of die size, every silicon wafer of automatic blanking can be stuck in the gaily decorated basket after making herbs into wool, and silicon wafer is carried to next
Road diffusing procedure.
4. the rectangle polysilicon solar battery slice processing method of the non-equidimension of length and width according to claim 1, special
Sign is, the step 3) diffusion, and diffusing procedure is needed using the quartz boat to match with die size, using plug-in sheet machine by silicon
It in the back-to-back insertion quartz boat of piece, is spread subsequently into diffusion furnace, is diffused carrying silicon wafer and produces PN junction, cleanliness one
Ten thousand grades, depending on center sheet resistance technique is required with regard to silicon wafer type.
5. the rectangle polysilicon solar battery slice processing method of the non-equidimension of length and width according to claim 1, special
Sign is, the step 4) etching, and etching procedure is that silicon wafer is substantially carried out sour cleaning with chain equipment, after silicon chip erosion, under
It utilizes when material and carries silicon wafer to lower filming process together with the matched gaily decorated basket of die size.
6. the rectangle polysilicon solar battery slice processing method of the non-equidimension of length and width according to claim 1, special
Sign is that the step 5) PECVD is specific as follows, and filming process is needed using the graphite boat to match with silicon wafer, by silicon wafer card
Enter tube type apparatus plated film after into graphite boat, carrying silicon wafer carries out plated film, and film thickness monitoring exists in 82 ± 5nm, refractive index control
2.08±0.04。
7. the rectangle polysilicon solar battery slice processing method of the non-equidimension of length and width according to claim 1, special
Sign is that the step 6) silk-screen printing is specific as follows, and the techniques such as electrode pulling force and weight in wet base require to need root when silkscreen process
It is determined according to silicon wafer type and actual production demand；The halftone size used needs to match die size.
8. the rectangle polysilicon solar battery slice processing method of the non-equidimension of length and width according to claim 2, special
Sign is, it is as follows that the step 1) silicon wafer cuts corresponding size, the die size being cut into be respectively 156.75mm ×
188.10mm, 156.75mm × 182.88mm, 156.75mm × 179.14mm, and then as non-equidimension rectangle crystal silicon electricity
The raw material silicon wafer of pond piece.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021232572A1 (en) * | 2020-05-19 | 2021-11-25 | 东方日升新能源股份有限公司 | Silicon wafer/cell sheet, photovoltaic cell assembly, carrier, and design and arrangement method |
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| CN108461577A (en) * | 2018-04-08 | 2018-08-28 | 浙江晶科能源有限公司 | A kind of production method of photovoltaic module |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2021232572A1 (en) * | 2020-05-19 | 2021-11-25 | 东方日升新能源股份有限公司 | Silicon wafer/cell sheet, photovoltaic cell assembly, carrier, and design and arrangement method |
| EP3940796A4 (en) * | 2020-05-19 | 2022-06-29 | Risen Energy Co. Ltd | Silicon wafer/cell sheet, photovoltaic cell assembly, carrier, and design and arrangement method |
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